JPH0770395B2 - Magnetoresistive alloy film - Google Patents
Magnetoresistive alloy filmInfo
- Publication number
- JPH0770395B2 JPH0770395B2 JP61171220A JP17122086A JPH0770395B2 JP H0770395 B2 JPH0770395 B2 JP H0770395B2 JP 61171220 A JP61171220 A JP 61171220A JP 17122086 A JP17122086 A JP 17122086A JP H0770395 B2 JPH0770395 B2 JP H0770395B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy film
- alloy
- layer
- magnetoresistive
- soft magnetism
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はMR(磁気抵抗)ヘッド用の磁気抵抗合金膜に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive alloy film for MR (magnetoresistive) heads.
従来の技術 MRヘッド用材料としては次式で表わされる磁気抵抗効果 が大きく、かつ抗磁力Hcの小さい軟磁性材料が望まし
い。ただしρ⊥は電流と磁化方向が直角な時の抵抗、ρ
は平行な時の抵抗であり、ρoは消磁状態の抵抗であ
る。このような観点より、軟磁性を示し△ρ/ρoが約
2%のパーマロイ(Ni80Fe20)合金が現在は主としてMR
ヘッドに用いられている。Conventional technology Magneto-resistive effect expressed by the following formula as a material for MR headIt is desirable to use a soft magnetic material that has a large magnetic field and a small coercive force Hc.
Yes. Where ρ⊥Is the resistance when the current is perpendicular to the magnetization direction, ρ
Is the resistance when parallel, ρoIs the demagnetized resistance
It From this point of view, it exhibits soft magnetism and Δρ / ρoIs about
2% permalloy (Ni80Fe20) Alloy is currently mainly MR
It is used in the head.
発明が解決しようとする問題点 パーマロイの△ρ/ρoは、実用的に不十分であり、よ
り高い特性の材料が望まれている。単に磁気抵抗効果の
みに着目すればNi80Fe20合金で△ρ/ρo6%の値が
得られる事がわかっているが、十分にHcの小さい軟磁性
をこの合金は示さない為にあまり実用化されていなかっ
た。Problems to be Solved by the Invention [Delta] [rho] / [rho] o of permalloy is not practically sufficient, and a material having higher characteristics is desired. It has been found that the value of Δρ / ρ o 6% can be obtained with the Ni 80 Fe 20 alloy if only focusing on the magnetoresistive effect, but this alloy does not show soft magnetism with sufficiently small Hc, so it is not so much. It was not put to practical use.
問題点を解決するための手段 Ni100-XCoX(10≦×≦40(at%)で表わされる合金膜
と、M100-U-VTUXV(0≦u≦25,0≦V≦30(at%))で
表わされる非晶質合金膜(ただし、MはFe,Co,Ni,Mn,C
r,Mo,Wより選ばれた1種又は2種以上の元素、TはTi,Z
r,Hf,Nb,Ta,Ru,Reより選ばれた1種又は2種以上の元
素、XはP,C,B,Si,Ge,Alより選ばれた1種又は2種以上
の元素を表わす。)とを交互に積層した膜を構成する。Means for Solving Problems Ni 100-X Co X (10 ≦ × ≦ 40 (at%) alloy film and M 100-UV T U X V (0 ≦ u ≦ 25,0 ≦ V ≦ Amorphous alloy film represented by 30 (at%) (where M is Fe, Co, Ni, Mn, C
One or more elements selected from r, Mo, W, T is Ti, Z
1 or 2 or more elements selected from r, Hf, Nb, Ta, Ru, Re, X is 1 or 2 or more elements selected from P, C, B, Si, Ge, Al Represent. ) And are alternately laminated to form a film.
作 用 Ni−Co合金膜の△ρ/ρoが大である特性と、非晶質合
金膜の軟磁性とが各々有効に発揮され、全体として△ρ
/ρoがパーマロイを上まわり、軟磁性を示す合金膜が
得られる。The characteristic of the working Ni-Co alloy film, which has a large Δρ / ρ o , and the soft magnetism of the amorphous alloy film, are effectively exhibited.
/ Ρ o exceeds Permalloy, and an alloy film exhibiting soft magnetism is obtained.
実施例 本発明は△ρ/ρoの値は大なるもHcが大きく実用的で
なかった10≦X≦40のNi100-XCoX合金系と、軟磁性を示
し電気抵抗が比較的高い非晶質合金膜とを交互に積層
し、全体として軟磁性を示し、かつ△ρ/ρoが従来の
パーマロイ合金の値を上回る磁気抵抗材料を得るもので
ある。勿論単に積層しただけでは、全体としての磁化曲
線はHcの小さな非晶質合金部と比較的Hcの大なるNi−Co
合金部との積ね合わさった2段カーブを示すが、それぞ
れの合金膜の1層の厚さを薄くして行くと、全体として
Hcの小さな軟磁性を示し、かつ上述のような2段階の磁
化曲線を示さなくなる事を見い出した。この時それぞれ
の合金膜の1層の厚さは一般的には1000Å以下である事
が望ましい。又磁気抵抗効果が大なのみ、10≦X≦40の
Ni100-XCoX合金系であり、非晶質合金ではないので、△
ρ/ρoとして十分大きな値を得るには、少くとも前者
の層厚が後者の層厚より厚い事が望ましい。更にMRヘッ
ド作製工程等で高温加熱工程がもし必要な場合は、両合
金層間の拡散を防ぐ為に両合金と固溶しにくいAg,Cu,Mg
等より成る薄い層間拡散防止層を設けると効果がある。
なお、加熱工程が不用で室温で使用する際にはこのよう
な層を設ける必要はない。Example In the present invention, the value of Δρ / ρ o is large, but Hc is large and it is not practical. The Ni 100-X Co X alloy system of 10 ≦ X ≦ 40 and soft magnetism and relatively high electric resistance. An amorphous alloy film is alternately laminated to obtain a magnetoresistive material which exhibits soft magnetism as a whole and has Δρ / ρ o higher than that of a conventional permalloy alloy. Of course, by simply stacking the layers, the magnetization curve as a whole becomes smaller than that of the amorphous alloy part with a small Hc and Ni-Co with a relatively large Hc.
A two-step curve piled up with the alloy part is shown, but as the thickness of one layer of each alloy film is made thinner, as a whole
It has been found that Hc has a small soft magnetism and does not exhibit the above-described two-step magnetization curve. At this time, it is generally desirable that the thickness of one layer of each alloy film is 1000 Å or less. If the magnetoresistive effect is large, 10 ≦ X ≦ 40
Ni 100-X Co X alloy system, not an amorphous alloy, so △
In order to obtain a sufficiently large value for ρ / ρ o, it is desirable that the thickness of the former layer is at least thicker than the thickness of the latter layer. Furthermore, if a high-temperature heating process is required in the MR head manufacturing process, etc., Ag, Cu, Mg that are difficult to form a solid solution with both alloys to prevent diffusion between both alloy layers.
It is effective to provide a thin interlayer diffusion preventive layer made of, for example,
It should be noted that it is not necessary to provide such a layer when using at room temperature because the heating step is unnecessary.
又軟磁性を示す非晶質合金としては次式で示す組成のも
のが知られている。Further, as an amorphous alloy exhibiting soft magnetism, one having a composition represented by the following formula is known.
M100-U-VTUXV,0≦u≦25,0≦V≦30 (原子%)……(2) ただしMはFe,Cu,Ni,Mn,Cr,Mo,Wより選ばれる1種又は
2種以上の元素、TはTi,Zr,Hf,Nb,Ta,Ru,Reより選ばれ
る1種もしくは2種以上の元素、XはP,C,B,Si,Ge,Alよ
り選ばれる1種もしくは2種以上の元素である。(2)式
において、u=0のM100-U-VXVの合金系はメタルーメタ
ロイド系と呼ばれ代表的なものにFe−Si−B,Co−Si−B
等があり、(2)式においてv=0のM100-UTUの合金系は
メタル−メタル系と呼ばれ代表的なものとしてCo−Nb−
Zr等があり、又(2)式においてu≠0かつV≠0の両系
の中間的なものとしてCo−Nb−B等の非晶質軟磁性合金
が知られている。これら以下のGd−Co,Tb−Fe等の非晶
質合金系は軟磁性を示さないので前述のNiCo系合金との
積層には不向である。M 100-UV T U X V , 0≤u≤25,0≤V≤30 (atomic%) (2) However, M is one kind selected from Fe, Cu, Ni, Mn, Cr, Mo, W Or two or more elements, T is one or more elements selected from Ti, Zr, Hf, Nb, Ta, Ru, Re, X is selected from P, C, B, Si, Ge, Al It is one or more elements. In formula (2), the alloy system of M 100-UV X V with u = 0 is called a metal-metalloid system, and representative ones are Fe-Si-B and Co-Si-B.
In equation (2), the alloy system of M 100-U T U with v = 0 is called a metal-metal system, and a typical one is Co-Nb-
Amorphous soft magnetic alloys such as Co--Nb--B are known as intermediate ones of both systems where Zr exists and u ≠ 0 and V ≠ 0 in the equation (2). The following amorphous alloys such as Gd-Co and Tb-Fe do not exhibit soft magnetism and are not suitable for lamination with the above NiCo alloy.
以上述べたように(2)式で示した非晶質合金と、10≦X
≦40のNi100-XCoX合金とを積層する事により所望の△ρ
/ρoが大でかつ軟磁性を示す合金が得られる事がわか
ったが、以下では具体的実施例により本発明の効果の説
明を行なう。As described above, the amorphous alloy represented by the formula (2) and 10 ≦ X
By stacking ≦ 40 Ni 100-X Co X alloy, the desired Δρ
Although it has been found that an alloy having a large / ρ o and exhibiting soft magnetism can be obtained, the effects of the present invention will be described below with reference to specific examples.
<実施例1> ターゲットとしてNi100-XCoX(X=10,20,40)及びCo85
Nb10Zr5Co70Fe5Si12.5B12.5,Co68Fe2Nb10B20の6種類
のものを用いて、Ni−Co系合金と非晶質合金との各種積
層膜を2元スパッタ装置を用いて感光性ガラス基板上に
形成し、その磁気特性と△ρ/ρo効果の測定を行なっ
た、結果をまとめて以下の表に示した。<Example 1> Ni 100-X Co X (X = 10, 20, 40) and Co 85 as targets
A binary sputtering system for forming various laminated films of Ni—Co alloy and amorphous alloy by using six kinds of Nb 10 Zr 5 Co 70 Fe 5 Si 12.5 B 12.5 and Co 68 Fe 2 Nb 10 B 20 Was used to form on a photosensitive glass substrate, and its magnetic characteristics and Δρ / ρ o effect were measured. The results are summarized in the table below.
表に示した結果よりわかるように、△ρ/ρoがすべて
3%以上で従来のNi80Fe20合金膜よりもその値が大き
く、又1層の厚さが1000Å以下ではHcも小さく軟磁性を
示す合金膜が得られる事がわかる。 As can be seen from the results shown in the table, Δρ / ρ o are all 3% or more, which is larger than the conventional Ni 80 Fe 20 alloy film, and when the thickness of one layer is 1000 Å or less, Hc is also small and soft. It can be seen that an alloy film exhibiting magnetism can be obtained.
<実施例2> ターゲットにNi80Co20,Co85Nb10Zr5,Agを用い、3元ス
パッター装置によりNi−Co/Ag/Co−Nb−Zr/Agのくりか
えし周期を有する各種の多層膜を感光性ガラス基板上に
形成し、実施例1のNo.6の試料と一諸に400℃でアニー
ルを行ない、特性の熱的安定性を調べた。結果を以下に
示す。<Example 2> using a Ni 80 Co 20, Co 85 Nb 10 Zr 5, Ag as a target, various multi-layer film having a repeating period of the Ni-Co / Ag / Co- Nb-Zr / Ag by ternary sputtering apparatus Was formed on a photosensitive glass substrate and annealed with the sample of No. 6 of Example 1 at 400 ° C. to examine the thermal stability of the characteristics. The results are shown below.
表に示した結果より、Agを層間に有するものは熱的安定
性に優れている事がわかる。又あまりAg層が厚くなると
Hcはやや増大し、△ρ/ρoはやや減少するので望まし
くない事がわかる。又Cu,Mgを用いてもAgとほぼ同様の
効果があった。 From the results shown in the table, it can be seen that those having Ag between the layers have excellent thermal stability. If the Ag layer becomes too thick,
It can be seen that Hc is slightly increased and Δρ / ρ o is slightly decreased, which is not desirable. Moreover, even if Cu and Mg were used, the same effect as Ag was obtained.
発明の効果 本発明によれば、△ρ/ρo効果が大きい軟磁性合金膜
を実現できる。Effect of the Invention According to the present invention, a soft magnetic alloy film having a large Δρ / ρ o effect can be realized.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 C23C 14/14 G 9271−4K ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location C23C 14/14 G 9271-4K
Claims (3)
は2種以上の元素,TはTi,Zr,Hf,Mb,Ta,Ru,Reより選ばれ
る1種又は2種以上の元素,XはP,C,B,Si,Ge,Alより選ば
れる1種又は2種以上の元素を表わす。) とを交互に積層して成る事を特徴とする磁気抵抗合金
膜。1. An alloy film Ni 100-X Co X (10 ≦ × ≦ 40 (at%)) represented by the following formula and an amorphous alloy film M 100-UV T U X V represented by the following formula: (0 ≦ u ≦ 25, 0 ≦ V ≦ 30 (at%)) (where M is one or more elements selected from Fe, Co, Ni, Mn, Cr, Mo, W, T is Ti, One or more elements selected from Zr, Hf, Mb, Ta, Ru and Re, and X represents one or more elements selected from P, C, B, Si, Ge and Al. ) And are alternately laminated to form a magnetoresistive alloy film.
XVの1層の厚さをt2とするとき t1≦1000Å,t21000Å でかつ t1≧t2 である事を特徴とする特許請求の範囲第1項記載の磁気
抵抗合金膜。2. The thickness of one layer of Ni 100-X Co X is t 1 , M 100-UV T U
The magnetoresistive alloy film according to claim 1 , wherein t 1 ≦ 1000Å, t 2 1000Å and t 1 ≧ t 2 when the thickness of one layer of X V is t 2 .
u,Ag,Mgのうちのいずれかの元素より成る層を介在させ
た事を特徴とする特許請求の範囲第1項記載の磁気抵抗
合金膜。3. C between the Ni 100-X Co X layer and the M 100-UV T U X V layer
The magnetoresistive alloy film according to claim 1, wherein a layer made of any one of u, Ag, and Mg is interposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61171220A JPH0770395B2 (en) | 1986-07-21 | 1986-07-21 | Magnetoresistive alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61171220A JPH0770395B2 (en) | 1986-07-21 | 1986-07-21 | Magnetoresistive alloy film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6328082A JPS6328082A (en) | 1988-02-05 |
| JPH0770395B2 true JPH0770395B2 (en) | 1995-07-31 |
Family
ID=15919266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61171220A Expired - Lifetime JPH0770395B2 (en) | 1986-07-21 | 1986-07-21 | Magnetoresistive alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770395B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02266579A (en) * | 1989-04-07 | 1990-10-31 | Nec Corp | Magnetoresistance effect element |
| JP2610376B2 (en) * | 1991-03-29 | 1997-05-14 | 株式会社東芝 | Magnetoresistance effect element |
| JP6406940B2 (en) * | 2014-09-04 | 2018-10-17 | キヤノン株式会社 | Amorphous alloy, mold for molding, and method of manufacturing optical element |
| CN110079750B (en) * | 2019-04-26 | 2020-10-02 | 北京科技大学 | Low-melting-point nickel-based amorphous nanocrystalline alloy and preparation method thereof |
| CN114318445B (en) * | 2021-12-24 | 2023-06-09 | 珠海多创科技有限公司 | Composite magnetism-gathering film |
-
1986
- 1986-07-21 JP JP61171220A patent/JPH0770395B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6328082A (en) | 1988-02-05 |
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