JPH0770494B2 - Wafer boat manufacturing method for semiconductor manufacturing - Google Patents
Wafer boat manufacturing method for semiconductor manufacturingInfo
- Publication number
- JPH0770494B2 JPH0770494B2 JP61243049A JP24304986A JPH0770494B2 JP H0770494 B2 JPH0770494 B2 JP H0770494B2 JP 61243049 A JP61243049 A JP 61243049A JP 24304986 A JP24304986 A JP 24304986A JP H0770494 B2 JPH0770494 B2 JP H0770494B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- manufacturing
- silicon carbide
- wafer
- wafer boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体材料であるシリコンウエハーを加熱処
理する際に、シリコンウエハーを載置して保持するのに
用いられる炭化珪素−金属珪素からなるウエハーボート
の製法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a silicon carbide-metal silicon used for mounting and holding a silicon wafer when the silicon wafer, which is a semiconductor material, is heat-treated. The present invention relates to a method for manufacturing a wafer boat.
一般に半導体の製造用に使用するウエハーボートの材料
としては、石英、炭化珪素−金属珪素などの材料が使用
されている。Generally, as a material of a wafer boat used for manufacturing a semiconductor, a material such as quartz or silicon carbide-metal silicon is used.
しかし、石英は純度が高い反面、軟化温度が約1200℃と
低いため、ウエハーを載置して保持するための溝が変形
しやすい等の欠点があるため、耐熱性の良い炭化珪素−
金属珪素が用いられることが多くなつてきた。However, while quartz has a high purity, it has a low softening temperature of about 1200 ° C., which has the drawback that the groove for mounting and holding the wafer is easily deformed.
It has become common to use metallic silicon.
従来、炭化珪素−金属珪素からなるウエハーボートは、
重量を軽くする目的から、パイプ状に形成された成形体
を加工機により、シリコンウエハーを載置して保持する
ための溝部を形成する必要最低限の支持部を残して、加
工する方法や、固定部、支持部を個々に作成後ピン止め
等の嵌合する方法により製造されていた。Conventionally, a wafer boat made of silicon carbide-metal silicon is
For the purpose of reducing the weight, a method for processing a molded body formed in a pipe shape by a processing machine, leaving a minimum necessary supporting portion for forming a groove for mounting and holding a silicon wafer, It was manufactured by a method in which the fixing portion and the supporting portion were individually formed and then fitted by pinning or the like.
上述の方法のうち、前者は、加工工程が複雑で更に加工
時に混入する不純物の除去のため酸などにより高純度化
し、その後金属珪素を含浸するもので、非常にコストの
高いものとなつていた。Among the above-mentioned methods, the former method has a complicated processing step and is further highly purified with an acid or the like to remove impurities mixed in during processing, and then impregnated with metallic silicon, which is very expensive. .
又、後者は、支持部、固定部など別々に金属珪素を浸透
したものを組立てるもので、工程の複雑さによりコスト
高となつていた。更に、シリコンウエハーを載置して保
持するための溝加工が組立て前で行つているため、組立
て時の溝がズレることがあり、精度がわるくなる欠点が
あつた。In the latter, the supporting part and the fixing part are separately assembled by permeating metallic silicon, and the cost is high due to the complexity of the process. Further, since the groove processing for mounting and holding the silicon wafer is performed before the assembly, the groove may be misaligned at the time of the assembly, and there is a drawback that the accuracy becomes poor.
本発明の目的は、上記問題点であるコストを低減した安
価で且つ高純度、高精度の半導体製造用ウエハーボート
の製法を提供することにある。An object of the present invention is to provide a method for manufacturing a wafer boat for semiconductor manufacturing, which is inexpensive, highly pure, and highly accurate, and which reduces the above-mentioned problem of cost.
即ち、炭化珪素−金属珪素よりなる半導体製造用ウエハ
ーボートの製法において、炭化珪素からなるシリコンウ
エハー支持部と同じく炭化珪素からなる該支持部の固定
部との接着部を炭化珪素を主成分とするペーストで仮化
めして仮止めした炭化珪素体を形成し、該仮止めした炭
化珪素体全体に金属珪素を浸透し、ガス不透過性と接着
固定を同時に行い、浸透後ウエハーを保持する溝を形成
することを特徴とする。That is, in a method of manufacturing a wafer boat for semiconductor production made of silicon carbide-metal silicon, a bonding portion between a silicon wafer supporting portion made of silicon carbide and a fixing portion of the supporting portion made of silicon carbide contains silicon carbide as a main component. A silicon carbide body that is temporarily fixed with paste is formed, and metallic silicon is permeated into the entire temporarily fixed silicon carbide body to simultaneously perform gas impermeability and adhesive fixation, and form a groove for holding the wafer after permeation. It is characterized by forming.
次に本発明を図面によつて説明する。第１図は本発明の
製法によるウエハーボートの斜視図である。ウエハーを
載置して保持するための支持部１は、丸棒状、或いは角
状の高純度炭化珪素体から作られる。又、上記支持部１
を固定するための固定部２は第２図で示すように、半円
状で上記丸棒状の支持部１と組み合うように弧３が設け
られており、高純度炭化珪素体から作られる。Next, the present invention will be described with reference to the drawings. FIG. 1 is a perspective view of a wafer boat according to the manufacturing method of the present invention. The supporting portion 1 for mounting and holding a wafer is made of a round bar-shaped or angular high-purity silicon carbide body. Also, the supporting portion 1
As shown in FIG. 2, the fixing portion 2 for fixing the above is provided with an arc 3 so as to be combined with the supporting portion 1 in the shape of a semi-circular rod, and is made of a high-purity silicon carbide body.
予め、上記固定部２の弧３に支持部１を高純度炭化珪素
からなるペースト状の液により、仮止めする。次に、仮
止めした高純度炭化珪素体からなるウエハーボートを溶
融した高純度金属珪素に浸すと、溶融した高純度金属珪
素は毛細管現象により、上記支持部１、固定部２及び支
持部１と固定部２の仮止めした接着部の気孔部に浸透さ
れ、不透過性と接着固定が同時に行なわれた炭化珪素−
金属珪素からなるウエハーボートが得られる。In advance, the supporting portion 1 is temporarily fixed to the arc 3 of the fixing portion 2 with a paste liquid made of high-purity silicon carbide. Next, when the wafer boat made of the temporarily fixed high-purity silicon carbide body is dipped in the molten high-purity metallic silicon, the molten high-purity metallic silicon is separated into the supporting portion 1, the fixing portion 2 and the supporting portion 1 by the capillary phenomenon. Silicon carbide that has penetrated into the pores of the temporarily fixed adhesive portion of the fixing portion 2 and is impermeable and adhesively fixed at the same time.
A wafer boat made of metallic silicon is obtained.
尚、第１図において、上記固定部２は両端に２枚使用し
た例であるが、ウエハーボートが長い場合、中間部にも
固定部を設けても差しつかえない。Although FIG. 1 shows an example in which two fixing portions 2 are used at both ends, if the wafer boat is long, the fixing portions may be provided in the intermediate portion as well.
上記の接着され、不透過性になつたウエハーボートをウ
エハーを載置して保持するために、支持部に所定の溝
幅、溝ピツチ、溝深さに切断し、溝部を形成する。In order to mount and hold the wafer on the bonded and impermeable wafer boat, the supporting portion is cut into a predetermined groove width, groove pitch, and groove depth to form a groove portion.
以下に本発明の実施例を説明する。まず、粒径0.5〜600
μｍの高純度炭化珪素粉末とセルローズ系のバインダー
をよく混合し、水を加えて混練した後、外径8mm、長さ2
00mmの丸棒状の支持部を３本成形した。同様にして、外
径93mm、内径77mm、長さ30mmで、上記、外径8mmの支持
部が組み合うような弧を有する半円状の固定部を２個、
成形した。乾燥後、上記、支持部と固定部を高純度炭化
珪素からなるペースト状の液により仮止めして、ウエハ
ーボートの形状を得た。次に、仮止めした高純度炭化珪
素からなるウエハーボートを溶融した高純度金属珪素に
浸すことにより、上記、支持部、固定部及び支持部と固
定部の仮止めした接着部の気孔に溶融した高純度金属珪
素が浸透され、支持部と仮止めした接着部の気孔率は１
％以下であり、ガス不透過性と接着固定が同時に行なわ
れた。上記のガス不透過性と接着固定が同時に行なわれ
たウェハーボートにシリコンウエハーを載置して保持す
るために支持部に溝幅0.6mm、溝ピツチ3mm、溝深さ3mm
の溝を形成し、３″用シリコンウエハーを乗せるウエハ
ーボートが得られた。溝ピツチの精度は±50μｍ以下で
あつた。Examples of the present invention will be described below. First, the particle size 0.5-600
After mixing high-purity silicon carbide powder with a diameter of μm and a cellulosic binder well and adding water and kneading, the outer diameter is 8 mm and the length is 2
Three 00 mm round bar-shaped support portions were formed. Similarly, two semi-circular fixing parts having an outer diameter of 93 mm, an inner diameter of 77 mm, a length of 30 mm, and having an arc such that the supporting parts having an outer diameter of 8 mm are combined,
Molded. After drying, the supporting part and the fixing part were temporarily fixed with a paste-like liquid made of high-purity silicon carbide to obtain a wafer boat shape. Next, the wafer boat made of temporarily fixed high-purity silicon carbide was dipped in the molten high-purity metallic silicon to be melted in the pores of the supporting part, the fixing part, and the temporarily fixed adhesion part of the supporting part and the fixing part. High-purity metallic silicon is infiltrated, and the porosity of the support part and the temporarily fixed adhesion part is 1
% Or less, gas impermeability and adhesive fixation were performed at the same time. Groove width 0.6 mm, groove pitch 3 mm, groove depth 3 mm in the support part to place and hold the silicon wafer on the wafer boat where the above gas impermeability and adhesive fixing were performed at the same time.
A wafer boat was obtained in which the 3 "silicon wafer was placed, and the accuracy of the groove pitch was ± 50 µm or less.
まず、上記、実施例と同様の原料を使用して、外径85m
m、内径71mm、長さ200mmの半円状のパイプを鋳込み成形
した後、成形体を加工機により、支持部と固定部を残し
て加工した。しかし、得られた加工品の不純物濃度は加
工機による汚染を受けたために、Flが60ppm、Cuが5ppm
増加した。次に、汚染を受けた不純物を除去する為に塩
酸液で不純物を溶出して高純度にし、その後、高純度金
属珪素を上記実施例と同様にして浸透させた。塩酸液に
よる高純度化処理の工程が必要な分だけコストが高くな
つた。First, using the same raw material as in the above example, an outer diameter of 85 m
After casting a semicircular pipe having m, an inner diameter of 71 mm, and a length of 200 mm, the molded body was processed by a processing machine while leaving the supporting portion and the fixed portion. However, the impurity concentration of the obtained processed product was contaminated by the processing machine, so that Fl was 60 ppm and Cu was 5 ppm.
Increased. Next, in order to remove the contaminated impurities, the impurities were eluted with a hydrochloric acid solution to obtain high purity, and thereafter, high-purity metallic silicon was permeated in the same manner as in the above-mentioned example. The cost was increased by the amount required for the step of high purification treatment with a hydrochloric acid solution.
まず、実施例と同様にして得られたピン穴を有する支持
部と固定部を別々に金属珪素を浸透させたのち、支持部
に実施例と同寸法の溝を切断した。次に支持部と固定部
をピンをピン穴に入れることにより嵌合してウエハーボ
ートを得た。上記の方法は支持部と固定部を別々に金属
珪素を浸透させる分だけコストが高くなつた。又、組立
後の溝ピツチの精度を測定したところ±50μｍ以上であ
つた。First, a support portion having pin holes and a fixing portion obtained in the same manner as in the embodiment were separately impregnated with metallic silicon, and then a groove having the same size as that of the embodiment was cut in the support portion. Next, the support part and the fixed part were fitted by inserting pins into the pin holes to obtain a wafer boat. In the above method, the cost is increased because the metallic silicon is separately permeated into the supporting portion and the fixing portion. Moreover, the accuracy of the groove pitch after assembly was measured and found to be ± 50 μm or more.
上述のように本発明により、加工時の不純物汚染を除去
するための酸処理工程を省くことができることと、支持
部と固定部を同時に金属珪素を浸透させて、接着できる
ことにより、コスト低域がはかれる。又、本発明に係る
製法によれば高精度が維持できることにより、半導体工
業におけるシリコンウエハーを加熱処理する治具として
最適である。As described above, according to the present invention, the acid treatment step for removing the impurity contamination during processing can be omitted, and the supporting portion and the fixing portion can be permeated with metallic silicon at the same time and adhered to each other, thereby reducing the cost range. Be peeled off. Further, since the manufacturing method according to the present invention can maintain high accuracy, it is most suitable as a jig for heating a silicon wafer in the semiconductor industry.
第１図は本発明によるウエハーボートを示す斜視図、 第２図は上記支持部を固定するための固定部を示す正面
図と平面図である。 １……支持部、２……固定部 ３……弧、４……溝FIG. 1 is a perspective view showing a wafer boat according to the present invention, and FIG. 2 is a front view and a plan view showing a fixing portion for fixing the supporting portion. 1 ... Supporting part, 2 ... Fixed part 3 ... Arc, 4 ... Groove
Claims (1)
ウェハーボートの製法において、炭化珪素からなるシリ
コンウェハー支持部と、同じく炭化珪素からなる該支持
部の固定部との接着部を炭化珪素を主成分とするペース
トで仮止めして仮止めした炭化珪素体を形成し、該仮止
めした炭化珪素体全体に金属珪素を浸透し、ガス不透過
性と接着固定を同時に行い、浸透後、シリコンウェハー
を保持する溝を形成することを特徴とした半導体製造用
ウェハーボートの製法。1. A method of manufacturing a wafer boat for manufacturing a semiconductor comprising silicon carbide-metal silicon, wherein a silicon wafer supporting portion made of silicon carbide and a fixing portion of the supporting portion also made of silicon carbide are bonded to each other with silicon carbide. A silicon carbide body is formed by temporarily fixing it with a paste containing the main component, and metallic silicon is permeated into the entire temporarily fixed silicon carbide body to simultaneously perform gas impermeability and adhesive fixation, and after permeation, silicon is formed. A method of manufacturing a wafer boat for semiconductor manufacturing, which comprises forming a groove for holding a wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61243049A JPH0770494B2 (en) | 1986-10-15 | 1986-10-15 | Wafer boat manufacturing method for semiconductor manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61243049A JPH0770494B2 (en) | 1986-10-15 | 1986-10-15 | Wafer boat manufacturing method for semiconductor manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6398123A JPS6398123A (en) | 1988-04-28 |
| JPH0770494B2 true JPH0770494B2 (en) | 1995-07-31 |
Family
ID=17098054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61243049A Expired - Fee Related JPH0770494B2 (en) | 1986-10-15 | 1986-10-15 | Wafer boat manufacturing method for semiconductor manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770494B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09293685A (en) * | 1996-02-28 | 1997-11-11 | Asahi Glass Co Ltd | Vertical wafer boat |
| CN113880582A (en) * | 2021-08-10 | 2022-01-04 | 陕西固勤材料技术有限公司 | Preparation method of reaction sintered silicon carbide boat support |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3951587A (en) * | 1974-12-06 | 1976-04-20 | Norton Company | Silicon carbide diffusion furnace components |
| JPS5818349B2 (en) * | 1975-06-25 | 1983-04-12 | ノ−トン カンパニ− | Gas-impermeable hollow silicon carbide molded product and its manufacturing method |
| JPS53108764A (en) * | 1977-03-04 | 1978-09-21 | Nec Corp | Diffusion jig of semiconductor wafers |
| JPS6024290B2 (en) * | 1977-06-24 | 1985-06-12 | 川崎重工業株式会社 | 2-cycle engine blowback prevention device |
| JPS553384A (en) * | 1978-06-09 | 1980-01-11 | Norton Co | Method of adhering siliconndenatured silicon carbide element |
| JPS5864284A (en) * | 1981-10-09 | 1983-04-16 | 信越化学工業株式会社 | Manufacture of silicon carbide sintered body |
| JPS5978529A (en) * | 1982-10-28 | 1984-05-07 | Toshiba Ceramics Co Ltd | Silicon carbide material for manufacturing semiconductor |
| JPS59167051A (en) * | 1983-03-14 | 1984-09-20 | Nec Corp | Memory circuit device |
| JPS6011640U (en) * | 1983-06-30 | 1985-01-26 | 三菱電機株式会社 | synchronous machine |
| JPS5936247U (en) * | 1983-07-07 | 1984-03-07 | 東芝セラミツクス株式会社 | Silicon wafer processing jig |
| JPS6196535U (en) * | 1984-11-28 | 1986-06-21 | ||
| JPS61132562A (en) * | 1984-12-03 | 1986-06-20 | イ−グル工業株式会社 | Manufacture of silicon carbide sintered body |
-
1986
- 1986-10-15 JP JP61243049A patent/JPH0770494B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6398123A (en) | 1988-04-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |