JPH0770555B2 - Method for forming ball for wire bonding - Google Patents
Method for forming ball for wire bondingInfo
- Publication number
- JPH0770555B2 JPH0770555B2 JP60049786A JP4978685A JPH0770555B2 JP H0770555 B2 JPH0770555 B2 JP H0770555B2 JP 60049786 A JP60049786 A JP 60049786A JP 4978685 A JP4978685 A JP 4978685A JP H0770555 B2 JPH0770555 B2 JP H0770555B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- ball
- copper wire
- bonding
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
- H01R43/02—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01551—Changing the shapes of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
- H10W72/07141—Means for applying energy, e.g. ovens or lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、ICやトランジスタなどの製造工程におい
て、金属細線を接続するワイヤボンディング方法、特に
ボールボンディング方法に関し、金属細線をボールボン
ディングするためのボールの形成方法に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to a wire bonding method for connecting thin metal wires, particularly a ball bonding method, in a process of manufacturing ICs, transistors, etc. The present invention relates to a ball forming method.
従来ボンディング用金属細線としては、金線が使用され
ているが、この場合、コストが高くつくこととシリコン
チップ上のアルミ電極との接合部の長期信頼性が低いと
いう欠点を有するため、金に代えて、銅，アルニミウ
ム，パラジウム又はそれらの合金からなるワイヤを用い
ることが考えられる。Conventionally, a gold wire has been used as a thin metal wire for bonding, but in this case, it has the drawbacks of high cost and low long-term reliability of the joint with the aluminum electrode on the silicon chip. Instead, it is conceivable to use a wire made of copper, aluminum, palladium, or an alloy thereof.
またボンディング工程においては、方向性をなくすた
め、細線先端を球状化することが要求され、従来の金線
においては、ワイヤ先端と可動電極（放電電極）との間
に高電圧を印加し、放電させることによってワイヤの先
端に入熱を与え、溶融球状化している。この場合、従来
の全ての例において、絶縁破壊の容易さから、電極をプ
ラス，ワイヤ側をマイナスとしている。又、特公昭57−
39055号公報では、アルミニウム線を利用したワイヤボ
ンディング法が示されている。その第２頁第３欄第14行
〜第32行にアルミニウム線を正電位（絶対値）として、
アルミニウム線と放電電極との間に３〜4.5Vの直流電圧
を印加し、アルミニウム線の先端の球状化が試みられて
いる。しかし、アルミニウム線と放電電極間に印加する
直流電圧が３〜4.5V又は0.5〜10V程度では放電は起こら
ないし、又、放電が起こったとしても、そのような微弱
放電ではアルミニウムは溶融しないし、まして球状化は
起こらない。さらに、アルミニウムを正電位（絶対値）
にして、放電電極の電位を正にするのか負にするのかは
不明であり、アルミニウム線の先端の良好な球状化は困
難である。In addition, in the bonding process, it is required to make the tip of the fine wire spherical in order to eliminate the directionality. In the conventional gold wire, a high voltage is applied between the tip of the wire and the movable electrode (discharge electrode) to discharge. By this, heat is applied to the tip of the wire, and the wire is melted into a spherical shape. In this case, in all the conventional examples, the electrode is positive and the wire side is negative because of the ease of dielectric breakdown. In addition, Japanese Examined Sho 57-
Japanese Patent No. 39055 discloses a wire bonding method using an aluminum wire. On the second page, column 3, line 14 to line 32, the aluminum wire is set to a positive potential (absolute value),
It has been attempted to apply a DC voltage of 3 to 4.5 V between the aluminum wire and the discharge electrode to make the tip of the aluminum wire spherical. However, when the DC voltage applied between the aluminum wire and the discharge electrode is about 3 to 4.5V or 0.5 to 10V, no discharge occurs, and even if a discharge occurs, aluminum does not melt in such a weak discharge, Furthermore, spheroidization does not occur. Furthermore, aluminum is positive potential (absolute value)
Then, it is unclear whether the potential of the discharge electrode is positive or negative, and it is difficult to make the tip of the aluminum wire into a good spherical shape.
ここで表面に数10Å程度の自然酸化被膜を有している銅
ワイヤに対して、従来の金線に対するものと同様の方法
でボール形成を行なった場合の状況を第２図に模式的に
示す。図において、１は銅ワイヤ、２は放電電極、３は
アーク、４は電源、５はボンディングツールであるキャ
ピラリチップ、６は電極が形成され、熱が投与される部
分、７はアルゴン等の不活性ガス雰囲気、８は溶融履歴
を経て形成された部分である。FIG. 2 schematically shows a situation in which a ball is formed on a copper wire having a natural oxide film of about several tens of liters on the surface by the same method as that for a conventional gold wire. . In the figure, 1 is a copper wire, 2 is a discharge electrode, 3 is an arc, 4 is a power supply, 5 is a capillary chip which is a bonding tool, 6 is a portion where an electrode is formed and heat is applied, and 7 is a non-contact material such as argon. An active gas atmosphere, 8 is a portion formed through a melting history.
この方法では、放電時、マイナス極側おいては、熱電子
放出がより安定な仕事関数の小さい点（即ち、わずかな
金属酸化膜）を求めてその電極領域を広げようとする物
理的性質がある。従って、ワイヤ１がマイナスの場合に
は、第２図（ａ）に示すようにワイヤ１の上方までアー
ク３が形成され、ワイヤ１の表皮部から熱が投与され
る。その結果、第２図（ｂ）に示すように、先端に芯、
即ちワイヤ１の未溶融部1aを残した欠陥ボール８を発生
しがちである。この欠陥ボール８は形式的には球状化し
ていても、その内部に未溶融部1a残し、アルミニウム等
のワイヤよりそれ自体の硬度が高い銅ワイヤでは、この
未溶融部1aが残ると、ボンディングボールの硬度を十分
に低下することができないため、シリコンチップ上への
接合の際、不良、即ち、シリコンチップの微小クラック
発生などを発生させてしまう。また、銅ワイヤは酸化さ
れやすく上記のような自然酸化膜を発生しやすいため、
このような問題が顕著に発生する。In this method, at the time of discharging, on the negative electrode side, there is a physical property that the thermoelectron emission is more stable, that is, a point having a small work function (that is, a slight metal oxide film) is sought to expand the electrode region. is there. Therefore, when the wire 1 is minus, the arc 3 is formed above the wire 1 as shown in FIG. 2 (a), and heat is applied from the skin portion of the wire 1. As a result, as shown in FIG. 2B, the tip has a core,
That is, the defective balls 8 tend to be generated leaving the unmelted portion 1a of the wire 1. Even if the defective ball 8 is formally spherical, the unmelted portion 1a remains inside, and if the unmelted portion 1a remains in a copper wire having a hardness higher than that of a wire such as aluminum, the bonding ball Since the hardness cannot be sufficiently reduced, a defect, that is, the generation of microcracks in the silicon chip, occurs when the silicon chip is bonded onto the silicon chip. In addition, since the copper wire is easily oxidized and the natural oxide film as described above is easily generated,
Such a problem remarkably occurs.
ただし、従来の金線の場合では、その表面に酸化物を形
成しないので、このような問題は全くなく、放電の容易
さから、専ら上述のごときワイヤをマイナスにして用て
いた。However, in the case of the conventional gold wire, since no oxide is formed on the surface thereof, such a problem does not occur at all, and the wire as described above is exclusively used as a minus for the ease of discharge.
この発明は上記のような問題点を解決するためになされ
たものであり、銅ワイヤを用い、半導体チップに微小ク
ラックを発生させることなく、信頼性の高いワイヤボン
ディングを行うことができるワイヤボンディング用ボー
ルの形成方法を提供することを目的とする。The present invention has been made to solve the above problems, and uses a copper wire for wire bonding capable of performing highly reliable wire bonding without causing minute cracks in a semiconductor chip. An object is to provide a method for forming a ball.
この発明にかかるワイヤボンディング用ボールの形成方
法は、銅ワイヤを半導体チップの電極にボールボンディ
ングするためのボールの形成方法であって、上記銅ワイ
ヤとしてその純度が99.99％以上の銅ワイヤを用い、酸
素濃度5000ppm以下の不活性又は還元性雰囲気中で、上
記銅ワイヤと放電電極との間に、上記放電電極に対して
上記銅ワイヤをプラスとする直流電圧を印加して放電を
行って、上記銅ワイヤの先端部に当該銅ワイヤが溶融し
たボールを形成することを特徴とするものである。A method of forming a ball for wire bonding according to the present invention is a method of forming a ball for ball-bonding a copper wire to an electrode of a semiconductor chip, wherein the copper wire has a purity of 99.99% or more, In an inert or reducing atmosphere with an oxygen concentration of 5000 ppm or less, between the copper wire and the discharge electrode, a positive voltage is applied to the discharge wire to discharge the copper wire, and the discharge is performed. It is characterized in that a ball, in which the copper wire is melted, is formed at the tip of the copper wire.
この発明においては、上記構成としたことにより、上記
純度が99.99％以上の高純度の銅ワイヤの先端部に集中
的に熱が投与されて、当該先端部が溶融して得られるボ
ンディング用ボールな未溶融部分を含まず、かつ、酸素
されていないものとなる。従って、得られるボールは、
銅ワイヤとしてそれ自体の硬度が低い上記純度が99.99
％以上の高純度の銅ワイヤにより形成されていること，
酸素を含まないこと，及び，未溶融部分を含まないこと
から、従来のAuワイヤにより得られるボンディングボー
ルと同等レベルの低い硬度を有するものとなる。According to the present invention, by virtue of the above configuration, heat is intensively applied to the tip of the high-purity copper wire having a purity of 99.99% or more, and the tip is melted to form a bonding ball. It contains no unmelted portion and is not oxygenated. Therefore, the ball obtained is
As a copper wire, its hardness is low and the above purity is 99.99.
% Of high-purity copper wire,
Since it contains no oxygen and contains no unmelted portion, it has a hardness as low as that of a bonding ball obtained by a conventional Au wire.
以下、本発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例によるワイヤボンディング用
ボールの形成方法を模式的に示したのである。図におい
て、第２図と同一符号は同図と同一のものを示し、10は
99.99％以上の高純度の銅ワイヤ、17は酸素濃度5000ppm
以下のアルゴン等の不活性ガス雰囲気、18は溶融履歴を
経て形成れたボールである。FIG. 1 schematically shows a method for forming a wire bonding ball according to an embodiment of the present invention. In the figure, the same reference numerals as those in FIG.
High-purity copper wire of 99.99% or more, 17 oxygen concentration 5000 ppm
The following inert gas atmosphere of argon or the like, and 18 are balls formed through a melting history.
本実施例の方法では、金属ワイヤとして直径15μｍ〜80
μｍで、純度99.99％以上の銅ワイヤ10を用い、この銅
ワイヤ10と放電電極２の間に、銅ワイヤ10に対して放電
電極２をマイナスとして直流電圧を印加する。すると銅
ワイヤ10の先端部６のみに熱が投与され、ワイヤ溶融部
分はワイヤ10の先端部６のみに限定され、その溶融部18
は完全な球状を保ちながらその体積を増加させていき、
こうして所望のボール18が形成される。このときボール
形成時に受ける酸化を防止する目的で、放電領域には酸
素濃度5000ppm以下の不活性ガス雰囲気７を形成してお
く。In the method of this embodiment, the diameter of the metal wire is 15 μm to 80 μm.
A copper wire 10 having a thickness of 9 μm and a purity of 99.99% or more is used, and a direct current voltage is applied between the copper wire 10 and the discharge electrode 2 with the discharge electrode 2 being negative with respect to the copper wire 10. Then, heat is applied only to the tip portion 6 of the copper wire 10, and the molten portion of the wire is limited to only the tip portion 6 of the wire 10.
Keeps a perfect sphere and increases its volume,
In this way, the desired ball 18 is formed. At this time, an inert gas atmosphere 7 having an oxygen concentration of 5000 ppm or less is formed in the discharge region for the purpose of preventing oxidation that is received during ball formation.
以上のような本実施例の方法では、銅ワイヤとしてその
純度が99.99％以上の銅ワイヤを用い、酸素濃度5000ppm
以下の不活性雰囲気中で、銅ワイヤと放電電極との間
に、放電電極に対して銅ワイヤをプラスとする直流電圧
を印加して放電を行うので、銅ワイヤの先端部に集中的
に熱が投与されて、当該先端部に未溶融部分を含まず、
かつ、酸素の混入がない，球状のボールを形成すること
ができ、当該球状のボールは、純度が99.99％以上の高
純度の銅ワイヤが溶融したものであること，酸素を含ま
ないこと，及び，未溶融部分を含まないことから、その
硬度が低いものとなる（ビッカース硬さHvで60より小さ
いものとなる）。従って、この球状のボールをシリコン
チップ上へ接合すると、チップに微小クラックを発生す
ることなく、接合を行うことができる。In the method of the present embodiment as described above, a copper wire having a purity of 99.99% or more is used as the copper wire, and the oxygen concentration is 5000 ppm.
In the following inert atmosphere, a DC voltage that makes the copper wire positive is applied to the discharge electrode between the copper wire and the discharge electrode to perform discharge, so heat is concentrated at the tip of the copper wire. Is administered, the tip does not include an unmelted portion,
In addition, it is possible to form a spherical ball that is not mixed with oxygen, and the spherical ball is a molten high-purity copper wire having a purity of 99.99% or more, does not contain oxygen, and ， The hardness is low because it contains no unmelted part (Vickers hardness Hv is less than 60). Therefore, when this spherical ball is bonded to the silicon chip, the bonding can be performed without generating microcracks in the chip.
なお、銅ワイヤをプラス，放電電極をマイナスにする放
電を行って、未溶融部分を含まないボールが得られる場
合であっても、銅ワイヤとして一般的なその純度が99.9
9％より小さいものを用いた場合は、銅ワイヤそれ自体
が硬いことから、ボールの硬度を十分に低下することが
できず（ボールの硬度がビッカース硬さHvで60以上とな
り）、チップに微小クラックを発生させてしまう。Even when a ball containing no unmelted portion is obtained by performing discharge with the copper wire plus and the discharge electrode minus, the purity generally 99.9 for copper wire is obtained.
If less than 9% is used, the hardness of the ball cannot be sufficiently reduced because the copper wire itself is hard (the hardness of the ball is 60 or more in Vickers hardness Hv), and the chip is very small. It will cause cracks.
また、銅ワイヤをラプス，放電電極をマイナスにする放
電を行って、未溶融部分を含まないボールが得られる場
合であっても、放電雰囲気の酸素濃度が5000ppmより大
きくなると、酸素の混入によってボールの硬度が高くな
り（ボールの硬度がビッカース硬さHvで60以上とな
り）、チップに微小クラックを発生させてしまう。ま
た、ボール表面が酸化されてボールが球状にならず、ボ
ンディング性が劣化して、接合強度の低下を引き起こす
という不具合も生ずる。In addition, even if the copper wire is lapped and the discharge electrode is discharged negatively to obtain a ball that does not contain an unmelted portion, if the oxygen concentration in the discharge atmosphere becomes higher than 5000 ppm, the ball will be mixed due to oxygen. Has a high hardness (the hardness of the ball is 60 or more in Vickers hardness Hv), which causes minute cracks in the chip. Further, the surface of the ball is oxidized and the ball does not become spherical, so that the bondability is deteriorated and the bonding strength is lowered.
また上記実施例では、ボール形成を不活性ガス雰囲気で
行なうようにしたが、これは還元性雰囲気であってもよ
く、いずれにしても酸素濃度を5000ppm以下とすればよ
いものである。Further, in the above embodiment, the balls were formed in an inert gas atmosphere, but this may be a reducing atmosphere, and in any case, the oxygen concentration should be 5000 ppm or less.
以上のように、本発明にかかるワイヤボンディング用ボ
ールの形成方法によれば、銅ワイヤとしてその純度が9
9.99％以上の銅ワイヤを用い、酸素濃度5000ppm以下の
不活性又は還元性雰囲気中において、放電電極に対して
銅ワイヤをプラスとする直流電圧を印加する放電を行っ
て、上記銅ワイヤの先端部に当該銅ワイヤが溶融したワ
イヤボンディング用ボールを形成するようにしたので、
チップにクラックを生ずることのない，低硬度のワイヤ
ボンディング用ボールを形成することができ、その結
果、信頼性の高いワイヤボンディングを行うことができ
る。従って、金ワイヤよりも低コストの銅ワイヤによ
り、信頼性の高いワイヤボンディングを行うことができ
るので、半導体装置の製造コストを大幅に低減できる効
果がある。As described above, according to the method for forming the wire bonding ball of the present invention, the purity of the copper wire is 9
Using a 9.99% or more copper wire, in an inert or reducing atmosphere with an oxygen concentration of 5000 ppm or less, a positive DC voltage is applied to the discharge electrode and a discharge is applied to the tip of the copper wire. Since the copper wire is formed into a molten wire bonding ball,
It is possible to form a wire bonding ball of low hardness that does not cause cracks in the chip, and as a result, highly reliable wire bonding can be performed. Therefore, since it is possible to perform highly reliable wire bonding with a copper wire that is lower in cost than a gold wire, it is possible to significantly reduce the manufacturing cost of the semiconductor device.
第１図（ａ）（ｂ）は各々本発明の一実施例によるワイ
ヤボンディング用ボールの形成方法におけるアーク放電
時及びボール形成時を示す模式図、第２図（ａ）（ｂ）
は各々従来の方法におけるアーク放電時及びボール形成
時を示す模式図である。 ２……放電電極、10……銅ワイヤ、17……不活性ガス雰
囲気、18……ボール。 なお図中同一符号は同一又は相当部分を示す。1 (a) and 1 (b) are schematic diagrams respectively showing arc discharge and ball formation in the method for forming a wire bonding ball according to an embodiment of the present invention, and FIGS. 2 (a) and 2 (b).
FIG. 3A is a schematic diagram showing arc discharge and ball formation in a conventional method. 2 ... Discharge electrode, 10 ... Copper wire, 17 ... Inert gas atmosphere, 18 ... Ball. The same reference numerals in the drawings indicate the same or corresponding parts.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭58−118122（ＪＰ，Ａ) 特開 昭58−154241（ＪＰ，Ａ) 特開 昭59−139662（ＪＰ，Ａ) 特開 昭57−149744（ＪＰ，Ａ) ─────────────────────────────────────────────────── --- Continuation of the front page (56) Reference JP-A-58-118122 (JP, A) JP-A-58-154241 (JP, A) JP-A-59-139662 (JP, A) JP-A-57- 149744 (JP, A)
Claims (2)
ンディングするためのボールの形成方法であって、 上記銅ワイヤとしてその純度が99.99％以上の銅ワイヤ
を用い、酸素濃度5000ppm以下の不活性又は還元性雰囲
気中で、上記銅ワイヤと放電電極との間に、上記放電電
極に対して上記銅ワイヤをプラスとする直流電圧を印加
して放電を行って、上記銅ワイヤの先端部に当該銅ワイ
ヤが溶融したボールを形成することを特徴とするワイヤ
ボンディング用ボールの形成方法。1. A method of forming a ball for ball-bonding a copper wire to an electrode of a semiconductor chip, the copper wire having a purity of 99.99% or more, the oxygen concentration being 5000 ppm or less of inertness or In a reducing atmosphere, between the copper wire and the discharge electrode, a direct current voltage that makes the copper wire positive is applied to the discharge electrode to cause discharge, and the copper wire is applied to the tip of the copper wire. A method for forming a ball for wire bonding, which comprises forming a ball in which a wire is melted.
ものを用いることを特徴とする特許請求の範囲第１項記
載のワイヤボンディング用ボールの形成方法。2. The method for forming a wire bonding ball according to claim 1, wherein the copper wire having a diameter of 15 μm to 80 μm is used.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60049786A JPH0770555B2 (en) | 1985-03-13 | 1985-03-13 | Method for forming ball for wire bonding |
| KR1019860000462A KR910005701B1 (en) | 1985-03-01 | 1986-01-24 | Method of forming ball for wire bonding |
| US06/824,744 US4705204A (en) | 1985-03-01 | 1986-01-31 | Method of ball forming for wire bonding |
| GB8602740A GB2174032B (en) | 1985-03-01 | 1986-02-04 | Ball-type bonding wires for semiconductor devices and method for producing same |
| DE19863606224 DE3606224A1 (en) | 1985-03-01 | 1986-02-26 | BALL TYPE BOND WIRE FOR SEMICONDUCTOR DEVICES AND METHOD FOR THEIR PRODUCTION |
| DE3645066A DE3645066C2 (en) | 1985-03-01 | 1986-02-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60049786A JPH0770555B2 (en) | 1985-03-13 | 1985-03-13 | Method for forming ball for wire bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61208230A JPS61208230A (en) | 1986-09-16 |
| JPH0770555B2 true JPH0770555B2 (en) | 1995-07-31 |
Family
ID=12840840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60049786A Expired - Lifetime JPH0770555B2 (en) | 1985-03-01 | 1985-03-13 | Method for forming ball for wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770555B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58118122A (en) * | 1982-01-06 | 1983-07-14 | Hitachi Ltd | Formation of ball of metal wire |
| JPS5974040A (en) * | 1982-10-08 | 1984-04-26 | 大日本印刷株式会社 | Method and device for pasting label |
-
1985
- 1985-03-13 JP JP60049786A patent/JPH0770555B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61208230A (en) | 1986-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4705204A (en) | Method of ball forming for wire bonding | |
| KR910003574B1 (en) | Corrosion Resistance Aluminum Electronic Materials | |
| US5152450A (en) | Wire-bonding method, wire-bonding apparatus,and semiconductor device produced by the wire-bonding method | |
| EP0349095B1 (en) | Metal wire for use in integrated circuits | |
| JPH0770555B2 (en) | Method for forming ball for wire bonding | |
| JPS62136831A (en) | Formation of ball for wire bonding | |
| JPS5994837A (en) | Device for wire bonding | |
| KR910005701B1 (en) | Method of forming ball for wire bonding | |
| JPS61199645A (en) | Ball forming method for wire bonding | |
| JPH0719791B2 (en) | Method for forming ball for wire bonding | |
| JPS61105850A (en) | Wire bonding method | |
| JPS61234556A (en) | Bonding wire | |
| JPS62136832A (en) | Formation of ball for wire bonding | |
| JPH0719787B2 (en) | Gold alloy fine wire for bonding | |
| JPH084099B2 (en) | Copper bonding wire for semiconductor devices with excellent corrosion resistance | |
| JPS61208229A (en) | Formation of wire bonding ball | |
| JPS63217633A (en) | Wire bonding method | |
| JP2758819B2 (en) | Wire bonding method | |
| JPS603134A (en) | Wire bonding method | |
| JPS63300522A (en) | Semiconductor device | |
| JPS59219935A (en) | Bonding method | |
| JP3060855B2 (en) | Wire bonding equipment | |
| JPH01196131A (en) | Formation of wire bonding ball | |
| JPS5967643A (en) | Wire bonder | |
| JPS5994838A (en) | Device for wire bonding |