JPH0770826B2 - IC mounting method using inert gas flow - Google Patents
IC mounting method using inert gas flowInfo
- Publication number
- JPH0770826B2 JPH0770826B2 JP59180503A JP18050384A JPH0770826B2 JP H0770826 B2 JPH0770826 B2 JP H0770826B2 JP 59180503 A JP59180503 A JP 59180503A JP 18050384 A JP18050384 A JP 18050384A JP H0770826 B2 JPH0770826 B2 JP H0770826B2
- Authority
- JP
- Japan
- Prior art keywords
- inert gas
- heating
- cooling
- nozzle
- solder connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、液晶表示素子と共通のガラス基板などへ、液
晶の劣化や、基板のクラック等を生ずることなく、ICを
実装接続する方法に関する。Description: TECHNICAL FIELD The present invention relates to a method for mounting and connecting an IC to a glass substrate or the like common to a liquid crystal display element without causing deterioration of liquid crystal, cracking of the substrate, or the like.
従来から、ICなどを基板に取付ける際に、例えば「電子
材料のはんだ付技術」(大澤 直著、工業調査会刊)15
9〜161頁に記載されているように、赤外線照射や熱風吹
付けによる局部的加熱によって半田接続することが行わ
れていた。Conventionally, when mounting ICs on a board, for example, “Soldering technology for electronic materials” (authored by Nao Osawa, published by Kogyo Kenkyukai) 15
As described on pages 9 to 161, soldering was performed by infrared irradiation or local heating by blowing hot air.
しかし、赤外線照射法には、(イ)熱歪クラックを生じ
易いガラス基板等にICを半田付けするには不向き、
(ロ)液晶などの様に耐熱温度の低い(120℃)ものの
近傍にICを接続する場合、液晶を耐熱温度以下に保持す
ることが困難、(ハ)フラックスの酸化焼付を防止する
ために不活性ガス吹付機構を加熱部に付属設置する必要
があり加熱部全体の構造が複雑になる、(ニ)赤外線ヒ
ータには効率変化があり赤外線照射温度を検出して高精
度にフィードバック制御することが困難、などの難点が
ある。However, the infrared irradiation method is not suitable for (a) soldering an IC to a glass substrate or the like that easily causes thermal strain cracks.
(B) When connecting an IC near a low heat resistant temperature (120 ° C) such as liquid crystal, it is difficult to keep the liquid crystal below the heat resistant temperature. (C) In order to prevent oxidative burning of flux, It is necessary to install an active gas blowing mechanism attached to the heating section, which complicates the entire structure of the heating section. (D) There is a change in efficiency of the infrared heater, and it is possible to detect the infrared irradiation temperature and perform feedback control with high accuracy. There are difficulties such as difficulty.
また従来の熱風吹付加熱法では、熱風が基板片面に吹付
けられ、吹付量および吹付タイミングの高度な制御は行
われず、且つプラテン(金属板)による基板の予備加熱
なども行わないので、炉中半田付け法などに比べて小さ
い設備で間に合うが、半田接続時間の短縮、接続個所周
辺を耐熱温度以下に保持すること、及び基板クラック防
止等の重要事項が何れも困難などの問題があった。In addition, in the conventional hot air blowing additional heat method, hot air is blown onto one side of the substrate, high-level control of the blowing amount and blowing timing is not performed, and preheating of the substrate by the platen (metal plate) is not performed. Although it requires less equipment than the soldering method, there are problems such as shortening the solder connection time, keeping the periphery of the connection point at a heat resistant temperature or lower, and preventing important points such as board crack prevention.
本発明の目的は、ICを半田接続する個所の基板に熱歪に
よるクラックを発生させずに、半田接続個所近傍の耐熱
温度の低い物質を冷却保護しながら、高融点半田により
ICを基板に短時間で実装接続できる不活性ガス流による
IC実装法を提供することにある。The object of the present invention is to prevent the generation of cracks due to thermal strain on the substrate where the IC is soldered, and to protect the low-temperature-resistant substance near the solder connection point by cooling while using a high melting point solder.
With an inert gas flow that can mount and connect the IC to the board in a short time
To provide an IC mounting method.
上記目的を達成するために本発明においては、基板上に
形成させた配線パターンの接続部に対応させて、予め接
続用半田を盛った接続端子を有するICを配置し、半田接
続個所には高温に加熱した不活性ガス流を、接続個所の
周辺部には常温の冷却用不活性ガス流を、基板の表裏両
面に、それぞれ局部的に吹付け、半田接続終了後は直ち
に当該個所にも常温の冷却用不活性ガス流を吹付ける一
連の操作により、基板の半田接続局部の周辺は常に耐熱
温度以下に保持したまま、半田接続局部のみに対して、
半田を溶融させ電気的接続を実現するのに十分な高温ま
での加熱処理および接続終了後の常温への復帰冷却処理
を極めて短時間に終らせるようにした。なお、半田接続
の信頼性を向上させるために高融点半田を使用するの
で、高温の不活性ガスを流量を段階的に切換えながら連
続的に吹出させて、吹付ける高温不活性ガスの温度を安
定して所定値に保持させた。In order to achieve the above object, in the present invention, corresponding to the connection portion of the wiring pattern formed on the substrate, an IC having a connection terminal filled with solder for connection is arranged in advance, and the solder connection point has a high temperature. The heated inert gas flow is sprayed locally, and the room temperature cooling inert gas flow is sprayed locally on both the front and back sides of the board, immediately after the solder connection is completed. By a series of operations of blowing an inert gas flow for cooling of, the periphery of the solder connection local part of the board is always kept below the heat resistant temperature, and only the solder connection local part is
The heating process up to a temperature high enough to melt the solder to realize electrical connection and the cooling process to return to normal temperature after the connection is completed can be completed in an extremely short time. Since high-melting point solder is used to improve the reliability of solder connection, the temperature of the hot inert gas sprayed is stabilized by continuously blowing out the hot inert gas while switching the flow rate stepwise. And held at a predetermined value.
第1図(a)は本発明の一実施例の要部断面図である。
液晶表示素子1の液晶封入部1a近傍のガラス基板1b上
に、LSIチップ2を、フラックス2aで仮固定してある。
液晶表示素子1の上下には、それぞれ加熱および冷却用
の不活性ガス流吹付穴を設けた金属製マスク(上)3a、
金属製マスク(下)3bが設置してある。さらに、上記金
属製マスク(上)3aの上部と、金属製マスク(下)3bの
下部とに、それぞれ、加熱用ノズル(上)4a、冷却用ノ
ズル(上)4bと、加熱用ノズル(下)4c、冷却用ノズル
(下)4dとが設けてある。加熱温度、吹付ガス流量は、
それぞれ温調器5a、5bと、流量レギュレータ6a、6bとに
より制御する。また、加熱用ノズル(上)4a、冷却用ノ
ズル(上)4bと、加熱用ノズル(下)4c、冷却用ノズル
(下)4dとは、それぞれ、パルスコントローラ7により
位置決め可能になっている。なお、液晶表示素子1は、
通常、プラテン8上に固定された状態でコンベイア等に
搭載されて、この半田接続部に搬入、搬出される。FIG. 1 (a) is a cross-sectional view of an essential part of an embodiment of the present invention.
The LSI chip 2 is temporarily fixed with the flux 2a on the glass substrate 1b near the liquid crystal enclosure 1a of the liquid crystal display element 1.
A metal mask (upper) 3a provided with holes for blowing an inert gas for heating and cooling, respectively, above and below the liquid crystal display element 1.
A metal mask (bottom) 3b is installed. Further, a heating nozzle (upper) 4a, a cooling nozzle (upper) 4b, and a heating nozzle (lower) are provided on the upper part of the metal mask (upper) 3a and the lower part of the metal mask (lower) 3b, respectively. ) 4c and a cooling nozzle (lower) 4d. The heating temperature and the blowing gas flow rate are
Control is performed by temperature controllers 5a and 5b and flow rate regulators 6a and 6b, respectively. The heating nozzle (upper) 4a, the cooling nozzle (upper) 4b, the heating nozzle (lower) 4c, and the cooling nozzle (lower) 4d can be positioned by the pulse controller 7, respectively. The liquid crystal display element 1 is
Normally, it is mounted on a conveyer or the like in a state of being fixed on the platen 8 and carried in and out of this solder connection portion.
次ぎに、LSIチップの半田接続加熱と液晶封入部冷却の
ための高温、低温の不活性ガスの吹付タイムチャートを
第1図(b)により説明する。タイミングAでは、加熱
用ノズルで高温(例えば600℃)ガスを吹付け、同時に
冷却用ノズルで少量の低温(例えば20℃)ガスを吹付け
る。タイミングBでは、加熱用ノズルを半田接続部外に
移動させ、吹付温度の安定のため少量の高温ガスを出し
ておき、冷却用ノズルを半田接続部内に移動させ、大量
の低温ガスを吹付ける。本実施例では、(イ)LSIチッ
プの半田接続部のガラス基板(金属膜配線部)を均一な
温度分布で加熱できるので、ガラス基板に熱歪によるク
ラックが発生しない、(ロ)半田接続部近傍における液
晶封入部を液晶の耐熱温度以下に保持可能なので、液晶
の劣化が防止される、(ハ)高温の不活性ガス(N2)を
半田接続部に吹付け加熱するので、フラックスの焼付き
防止、半田接続時間の短縮が可能、などの効果が得られ
た。Next, a spraying time chart of high-temperature and low-temperature inert gas for heating the solder connection of the LSI chip and cooling the liquid crystal filling portion will be described with reference to FIG. At the timing A, a high temperature (for example, 600 ° C.) gas is blown by the heating nozzle, and at the same time, a small amount of low temperature (for example, 20 ° C.) gas is blown by the cooling nozzle. At the timing B, the heating nozzle is moved to the outside of the solder connection portion, a small amount of high temperature gas is discharged in order to stabilize the spraying temperature, the cooling nozzle is moved to the inside of the solder connection portion, and a large amount of low temperature gas is sprayed. In this embodiment, (a) since the glass substrate (metal film wiring part) of the solder connection part of the LSI chip can be heated with a uniform temperature distribution, cracks due to thermal strain do not occur in the glass substrate. (B) Solder connection part Since the liquid crystal enclosure in the vicinity can be kept below the heat resistant temperature of the liquid crystal, deterioration of the liquid crystal is prevented. (C) High temperature inert gas (N 2 ) is sprayed on the solder connection to heat it, so that the flux is burned. It was possible to prevent sticking and shorten the solder connection time.
以上説明したように本発明によれば、(a)加熱および
冷却用の吹付けノズルを併用することにより、局部の加
熱と其の周辺の冷却とを同時に実行できる、(b)加熱
ガスと冷却ガスの流量の切換え及び吹付けタイミングの
設定を任意に制御し、加熱条件の最適化、加熱時間の短
縮化ができる、(c)吹付けノズルと金属マスクによる
基本的に機構が簡単で、しかも安価な方法で、ICを半田
接続できる。As described above, according to the present invention, (a) local heating and cooling of the periphery thereof can be simultaneously performed by using a spray nozzle for heating and cooling, (b) heating gas and cooling It is possible to optimize the heating conditions and shorten the heating time by arbitrarily controlling the switching of the gas flow rate and the setting of the spraying timing. (C) The spraying nozzle and the metal mask basically have a simple mechanism, and The IC can be soldered in an inexpensive way.
第1図(a)は本発明一実施例の要部断面図、第1図
(b)は高温、低温の不活性ガスの吹付けタイムチャー
トである。 1……液晶表示素子、2……LSIチップ、2a……フラッ
クス、3a……金属製マスク(上)、3b……金属製マスク
(下)、4a……加熱用ノズル(上)、4b……冷却用ノズ
ル(上)、4c……加熱用ノズル(下)、4d……冷却用ノ
ズル(下)、5a、5b……温調器、6a、6b……流量レギュ
レータ、7……パルスコントローラ、8……プラテン、
A……加熱のタイミング、B……冷却のタイミング。FIG. 1 (a) is a sectional view of an essential part of an embodiment of the present invention, and FIG. 1 (b) is a time chart of spraying an inert gas at high temperature and low temperature. 1 ... Liquid crystal display element, 2 ... LSI chip, 2a ... Flux, 3a ... Metal mask (top), 3b ... Metal mask (bottom), 4a ... Heating nozzle (top), 4b ... … Cooling nozzle (top), 4c …… Heating nozzle (bottom), 4d …… Cooling nozzle (bottom), 5a, 5b …… Temperature regulator, 6a, 6b …… Flow regulator, 7 …… Pulse controller , 8 ... Platen,
A: heating timing, B: cooling timing.
Claims (2)
半田付け実装する方法において、上記ガラス基板の表裏
両面側に、加熱用不活性ガスを吹付ける第1、第2のノ
ズル及び、不活性ガス吹付穴を有するマスクを設け、加
熱用不活性ガスを上記第1のノズルにより半田接続部に
吹付けると同時に、上記第2のノズルにより半田接続部
裏面にも吹付けることを特徴とする不活性ガス流による
IC実装法。1. A method of soldering an IC on a glass substrate having a wiring pattern, wherein first and second nozzles for spraying an inert gas for heating are provided on both front and back surfaces of the glass substrate, and an inert gas. A mask having a gas spray hole is provided, and the inert gas for heating is sprayed onto the solder connection part by the first nozzle at the same time as being sprayed on the back surface of the solder connection part by the second nozzle. By active gas flow
IC mounting method.
性ガスを吹き付ける第3及び、第4のノズルを設け、上
記第1及び、第2のノズルにより加熱用不活性ガスを半
田接続部に吹付けると同時に、上記第3及び、第4のノ
ズルにより冷却用不活性ガスを上記ガラス基板に吹付け
る第1の工程と、上記第3及び、第4のノズルにより冷
却用不活性ガスを半田接続部に吹付ける第2の工程から
なり、第1の工程と第2の工程とで、冷却用不活性ガス
及び加熱用不活性ガスの流量を変化させることを特徴と
する特許請求の範囲第1項に記載の不活性ガス流による
IC実装法。2. Third and fourth nozzles for spraying a cooling inert gas are provided on both front and back sides of the glass substrate, and the heating inert gas is soldered by the first and second nozzles. At the same time of spraying the cooling inert gas onto the glass substrate with the third and fourth nozzles, and with the cooling inert gas with the third and fourth nozzles. A second step of spraying the solder connection portion, wherein the flow rates of the cooling inert gas and the heating inert gas are changed in the first step and the second step. According to the inert gas flow described in item 1.
IC mounting method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59180503A JPH0770826B2 (en) | 1984-08-31 | 1984-08-31 | IC mounting method using inert gas flow |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59180503A JPH0770826B2 (en) | 1984-08-31 | 1984-08-31 | IC mounting method using inert gas flow |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6159894A JPS6159894A (en) | 1986-03-27 |
| JPH0770826B2 true JPH0770826B2 (en) | 1995-07-31 |
Family
ID=16084378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59180503A Expired - Lifetime JPH0770826B2 (en) | 1984-08-31 | 1984-08-31 | IC mounting method using inert gas flow |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770826B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT412603B (en) * | 2003-03-12 | 2005-04-25 | Datacon Semiconductor Equip | DEVICE FOR CONNECTING ELECTRONIC CIRCUITS |
| US7619936B2 (en) * | 2006-11-16 | 2009-11-17 | Qimonda North America Corp. | System that prevents reduction in data retention |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58158994A (en) * | 1982-03-17 | 1983-09-21 | 株式会社日立製作所 | Heat soldering method under point and device therefor |
-
1984
- 1984-08-31 JP JP59180503A patent/JPH0770826B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6159894A (en) | 1986-03-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |