JPH0774100B2 - Manufacturing method of high-purity aluminum nitride plate - Google Patents
Manufacturing method of high-purity aluminum nitride plateInfo
- Publication number
- JPH0774100B2 JPH0774100B2 JP61262268A JP26226886A JPH0774100B2 JP H0774100 B2 JPH0774100 B2 JP H0774100B2 JP 61262268 A JP61262268 A JP 61262268A JP 26226886 A JP26226886 A JP 26226886A JP H0774100 B2 JPH0774100 B2 JP H0774100B2
- Authority
- JP
- Japan
- Prior art keywords
- purity
- plate
- plate material
- aln
- porous ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Ceramic Products (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、理論密度比:100%の高純度窒化アルミニウ
ム(以下AlNで示す)板材を、簡単な操作で、コスト安
く製造する方法に関するものである。TECHNICAL FIELD The present invention relates to a method for producing a high-purity aluminum nitride (hereinafter referred to as AlN) plate material having a theoretical density ratio of 100% by a simple operation at a low cost. Is.
一般に、AlN板材は、耐熱性、耐食性、および耐摩耗性
にすぐれ、さらにすぐれた高温強度および高温耐熱衝撃
性をもつと共に、高い熱伝導性および絶縁性、並びに低
い誘電率および熱膨張率をもつなどセラミツクの中でも
際立つた特性をもつ材料であることから、各種装置の構
造材や、最近では高放熱性の要求されるLSIや、ハイブ
リツドICパツケージの基板などの機能性セラミツク板材
としての用途にも注目を集めている。In general, AlN sheet material has excellent heat resistance, corrosion resistance, and wear resistance, as well as excellent high temperature strength and high temperature thermal shock resistance, as well as high thermal conductivity and insulation, and low dielectric constant and thermal expansion coefficient. Since it is a material with outstanding characteristics among other ceramics, it is also used as a structural material for various devices, LSIs that require high heat dissipation recently, and functional ceramic board materials such as substrates for hybrid IC packages. It is getting attention.
従来、この種のAlN板材は、原料粉末として、AlN粉末を
用い、これを圧縮成形して板材とした状態で焼結するこ
とからなる粉末冶金法によつて製造されている。Conventionally, this kind of AlN plate material has been manufactured by a powder metallurgy method which comprises using AlN powder as a raw material powder and compressing and sintering the powder into a plate material.
しかし、上記の従来粉末冶金法によつて高密度のAlN板
材を製造するためには、 (1) きわめて微細なAlN粉末を使用する。However, in order to manufacture a high-density AlN plate material by the above-mentioned conventional powder metallurgy method, (1) extremely fine AlN powder is used.
(2) 焼結温度を1800℃以上の高温にする。(2) Raise the sintering temperature to a high temperature of 1800 ° C or higher.
(3) AlNの焼結性を促進する助剤を配合する。(3) Add an auxiliary agent that promotes the sinterability of AlN.
(4) 加圧焼結を行なう。(4) Perform pressure sintering.
などの手段をとらなければならず、さらに原料粉末中の
不純物や粉末表面の酸化物は、焼結時に結晶粒界に偏析
したり、結晶粒内に固溶して、AlN板材の熱的および電
気的特性や強度を劣化させるので、原料粉末としては極
力高純度のAlN粉末を使用し、かつ製造工程では不純物
汚染を最小限にとどめる注意をはらう必要があり、特に
AlN板材を、例えばICパツケージの基板として用いる場
合には、AlN板材中に微量の酸素や炭素、さらにSi、F
e、Mg成分などの金属不純物を含有すると熱伝導性が著
しく低下するようになつて実用に供し得ないものとな
り、このように高密度にして高純度のAlN板材を、通常
の粉末冶金法によつて製造するに際して、複雑な工程を
要するばかりでなく、原料粉末として微細にして高純度
のAlN粉末の使用が不可欠であるなど、コスト高となら
ざるを得ないのが現状である。In addition, impurities in the raw material powder and oxides on the powder surface are segregated at crystal grain boundaries during sintering, or are solid-dissolved in the crystal grains, and the thermal and Since it deteriorates the electrical characteristics and strength, it is necessary to use AlN powder with the highest possible purity as the raw material powder and take care to minimize impurity contamination in the manufacturing process.
When using an AlN plate material as a substrate for an IC package, for example, a trace amount of oxygen and carbon, and further Si, F
If metal impurities such as e and Mg are contained, the thermal conductivity will be significantly reduced and it will be unusable for practical use.In this way, high density and high purity AlN plate material can be processed by ordinary powder metallurgy method. Therefore, in the manufacturing process, not only a complicated process is required, but also it is inevitable that the cost is high because it is indispensable to use finely powdered AlN powder as a raw material powder.
そこで、本発明者等は、上述のような観点から、AlN板
材を通常の粉末冶金法によつて製造していたのでは、十
分満足する熱的および電気的特性、並びに強度をもつた
AlN板材をコスト安く製造することはきわめて困難であ
るとの認識に立ち、粉末冶金法によらないで、高密度お
よび高純度を有するAlN板材をコスト安く製造すべく研
究を行なつた結果、Al溶湯と反応しない耐熱性板と、高
純度Al板素材と、通気性多孔質セラミツク板とをこの順
に下から上に交互に重ね合せたものを1組とし、これを
1組または2組以上積み重ねて固定した状態で加熱炉に
おいて、例えば塩酸を含むガス雰囲気に一時的にさらす
などの手段により前記高純度Al板素材の表面酸化膜を除
去してクリーニングした後、窒素含有雰囲気中、Alの融
点以上の所定温度、望ましくは800℃以上の温度に所定
時間加熱保持して、雰囲気中の窒素を前記通気性多孔質
セラミツク板を通して、溶融状態の前記高純度Al板素材
と反応させるという簡単な操作で、かつ通常の雰囲気制
御可能な加熱炉を用いてAlN板材を形成することが可能
であり、しかもこの結果のAlN板材は、上記AlN板素材と
して高純度、例えば99.99%以上の純度をもつた純Alを
使用すれば、これに比例して高純度をもつようになり、
かつこの高純度Al板素材は、微細な高純度Al粉末に比し
て一段と安価であるばかりでなく、反応温度も低いこと
と合まつて、安いコストでの製造が可能であり、さらに
上記のように溶融Alの雰囲気窒素との反応によつて形成
されるものなので、溶解材としての密度、すなわち理論
密度比:100%をもつものとなるなどの知見を得たのであ
る。Therefore, from the above-mentioned viewpoints, the inventors of the present invention have sufficiently satisfactory thermal and electrical characteristics and strength if the AlN sheet material is manufactured by the ordinary powder metallurgy method.
Recognizing that it is extremely difficult to manufacture AlN sheet material at low cost, we conducted research to produce AlN sheet material with high density and high purity at low cost without using the powder metallurgy method. A heat-resistant plate that does not react with molten metal, a high-purity Al plate material, and a breathable porous ceramic plate are alternately stacked in this order from the bottom to the top, and one set or two or more sets are stacked. After removing the surface oxide film of the high-purity Al plate material by a means such as temporarily exposing it to a gas atmosphere containing hydrochloric acid in a heating furnace in a fixed state, the melting point of Al in a nitrogen-containing atmosphere. The above predetermined temperature, preferably 800 ° C. or higher temperature for a predetermined period of time, the nitrogen in the atmosphere through the air-permeable porous ceramic plate, a simple operation of reacting with the high-purity Al plate material in the molten state It is possible to form an AlN plate material using a heating furnace that can be controlled in a normal atmosphere, and the resulting AlN plate material has a high purity as the above AlN plate material, for example, a purity of 99.99% or more. If pure Al is used, it will have high purity in proportion to this,
And this high-purity Al plate material is not only much cheaper than fine high-purity Al powder, but also combined with the low reaction temperature, it is possible to manufacture at low cost, and further As described above, since it is formed by the reaction of molten Al with nitrogen in the atmosphere, it was found that the density as a melting material, that is, the theoretical density ratio: 100% is obtained.
この発明は、上記知見にもとづいてなされたものであつ
て、Al溶湯と反応しない耐熱性板と、高純度Al板素材
と、通気性多孔質セラミツク板とをこの順に下から上へ
重ね合せたものを1組とし、これを1組または2組以上
積み重ね、固定した状態で加熱炉において、ガス雰囲気
にて前記高純度Al板素材の表面酸化膜を除去した後、窒
素含有雰囲気中、Alの融点以上の所定温度に所定時間加
熱保持して、雰囲気中の窒素を前記通気性多孔質セラミ
ツク板を通して、溶融状態の前記高純度Al板素材と反応
させることによつて、高純度Al板材を製造する方法に特
徴を有するものである。This invention was made on the basis of the above findings, in which a heat-resistant plate that does not react with molten Al, a high-purity Al plate material, and a breathable porous ceramic plate were superposed in this order from bottom to top. One set or two or more sets are stacked and fixed in a heating furnace in a heating furnace to remove the surface oxide film of the high-purity Al plate material in a gas atmosphere, and then to remove Al in a nitrogen-containing atmosphere. A high-purity Al plate material is produced by heating and holding at a predetermined temperature equal to or higher than the melting point for a predetermined time, and passing nitrogen in the atmosphere through the air-permeable porous ceramic plate and reacting with the high-purity Al plate material in a molten state. The method has a feature.
なお、この発明の方法において、通気性多孔質セラミツ
ク板を用いたのは、雰囲気中の窒素ガスを溶融状態の高
純度Al板素材(以下Al融液という)と反応させることの
ほかに、Al融液の凝集防止を効果的に行なうという理由
からである。In the method of the present invention, the breathable porous ceramic plate is used in addition to reacting nitrogen gas in the atmosphere with a high-purity Al plate material in a molten state (hereinafter referred to as an Al melt). This is because it effectively prevents aggregation of the melt.
すなわち、Al板素材の厚さが、例えば1mm以下と薄い場
合、これをぬれ性の悪い板と重ね合せた状態でAlの融点
以上に加熱すると、Al融液の表面張力のために複数個の
島状プールに凝集する傾向を示すようになり、このよう
に窒化反応前に島状にAl融液が凝集すると、形成される
AlNも同様に凝集した島状となり、一定厚みのAlN板材を
製造することができない。That is, if the thickness of the Al plate material is as thin as 1 mm or less, for example, if it is heated above the melting point of Al in a state of being superposed with a plate having poor wettability, a plurality of Al melts may have surface tension. It tends to agglomerate into island pools, and is formed when the Al melt agglomerates into islands before the nitriding reaction.
Similarly, AlN also becomes an aggregated island shape, and it is not possible to manufacture an AlN plate material having a constant thickness.
しかし、この重ね板として、Al融液とのぬれ性が悪くて
も、空孔の大きさが小さく、かつセル数(1インチ長さ
当りの空孔数)が20〜50程度の通気性多孔質セラミック
板を用いると、Al融液の表面張力の作用で板間の狭い空
隙にAl融液が拡がることができず、その結果Al融液の凝
集が防止され、平板状の形を保つたままで窒化反応が急
速に進み、Al板素材とほぼ同じ形状のAlN板材が形成さ
れるようになるものであり、その材質としては、Al2O3
やZrO2などの単一材、さらにAl2O3−ZrO2や、Al2O3やZr
O2などのセラミツク繊維を無機バインダなどでかためて
シート状に形成した複合材などを用いるのがよい。However, even if the wettability with the Al melt is poor, this laminated plate has small pores, and the number of cells (holes per 1 inch length) is about 20 to 50. When a high quality ceramic plate is used, the surface tension of the Al melt prevents the Al melt from spreading into the narrow gaps between the plates, and as a result, the agglomeration of the Al melt is prevented and the flat shape is maintained. The nitriding reaction proceeds rapidly until AlN plate material with almost the same shape as the Al plate material is formed, and the material is Al 2 O 3
Single material such as or ZrO 2, and further Al 2 O 3 -ZrO 2, Al 2 O 3 and Zr
It is preferable to use a composite material in which ceramic fibers such as O 2 are hardened with an inorganic binder to form a sheet.
また、Al板素材が置かれる耐熱性板としては、平面が平
滑で、Al融液との反応がなく、かつAl融液の滲透がな
く、さらに板を構成する成分がAl融液中に不純物として
固溶含有しないものであれば特に制限はなく、例えば結
晶質またはガラス質の黒鉛板、さらにZrO2、Si3N4、あ
るいはBNなどで構成されたセラミツク板などの使用が望
ましく、この場合、前記セラミツク板にはAl融液が滲透
しない程度の細かい開気孔があつてもよい。Further, as the heat-resistant plate on which the Al plate material is placed, the flat surface is smooth, there is no reaction with the Al melt, and there is no penetration of the Al melt. There is no particular limitation as long as it does not contain a solid solution as, for example, a crystalline or vitreous graphite plate, further preferably ZrO 2 , Si 3 N 4 , or a ceramic plate composed of BN or the like, in this case The ceramic plate may have fine open pores that do not allow the Al melt to permeate.
さらに、この発明の方法を実施するにあたつては、耐熱
性板、高純度Al板素材、および通気性多孔質セラミック
板を一体に固定するための、例えばはさみ冶具などの固
定冶具を用いるのが望ましく、この固定冶具の使用によ
つてAl融液の表面張力による通気性多孔質セラミツク板
の持ち上げが原因で発生するAl融液の凝集現象が防止さ
れるようになるものである。Furthermore, in carrying out the method of the present invention, a fixing jig, such as a scissors jig, is used for integrally fixing the heat-resistant plate, the high-purity Al plate material, and the air-permeable porous ceramic plate. However, by using this fixing jig, the agglomeration phenomenon of the Al melt caused by the lifting of the breathable porous ceramic plate due to the surface tension of the Al melt can be prevented.
つぎに、この発明の方法を実施例により図面を参照しな
がら具体的に説明する。Next, the method of the present invention will be specifically described by way of examples with reference to the drawings.
実施例 1 第1図に概略断面図で示されるように、50mm×100mm×1
mmの寸法をもつた純度:99.99%の高純度Al板素材1を、
60mm×110mm×1.5mmの寸法をもつた結晶質黒鉛板からな
る耐熱性板2の上に置き、その上に50mm×100mm×5mmの
寸法、75%の多孔度、および30個のセル数をもつたアル
ミナ−コーデイエライトセラミツクからなる通気性多孔
質セラミツク板3を重ね合わせ、この1組の重ね合わせ
体の側面中央部4個所を、前記通気性多孔質セラミツク
板と同じ材質の当て板4をそれぞれの側面に当接させた
状態で黒鉛製固定冶具5で固定し、この状態で加熱炉の
アルミナ製炉心管6内の台板7上に載置装入して、ヒー
ター8で加熱し、まず窒素ガスと塩酸ガスの割合が10:1
の混合ガスを、炉心管内に500〜800℃の昇温過程で約30
分間流し、続いて800℃になつた時点で塩酸ガスの割合
を零にした状態で、500C.C./mimの割合で窒素を流し、
窒素雰囲気を形成しながら昇温し、温度:1000℃に30分
間保持することによつて本発明法を実施し、AlN板材
(以下本発明AlN板材1という)を製造した。Example 1 As shown in the schematic sectional view of FIG. 1, 50 mm × 100 mm × 1
Purity with mm dimension: 99.99% high-purity Al plate material 1,
Place it on a heat-resistant plate 2 consisting of a crystalline graphite plate with dimensions of 60 mm × 110 mm × 1.5 mm, and place 50 mm × 100 mm × 5 mm dimensions, 75% porosity, and 30 cells on it. The air-permeable porous ceramic plates 3 made of alumina-cordierite ceramics are superposed, and the four side surface central portions of the set of the superposed bodies are attached to each other by a pad plate 4 made of the same material as the air-permeable porous ceramic plate. Are fixed with graphite fixing jigs 5 in contact with the respective side surfaces, and in this state, they are placed on the base plate 7 in the alumina furnace core tube 6 of the heating furnace and heated by the heater 8. First, the ratio of nitrogen gas and hydrochloric acid gas is 10: 1
Of the mixed gas of about 30 during the temperature rising process of 500-800 ℃ in the core tube.
Flow for a minute, and then at a temperature of 800 ° C., with the ratio of hydrochloric acid gas being zero, flow nitrogen at a ratio of 500 C.C./mim,
The method of the present invention was carried out by raising the temperature while forming a nitrogen atmosphere and maintaining the temperature at 1000 ° C. for 30 minutes to produce an AlN plate material (hereinafter referred to as AlN plate material 1 of the present invention).
実施例 2 第2図に同じく概略断面図で示されるように、高純度Al
板素材1として純度:99.99%のものを使用すると共に、
この高純度Al板素材1と上記の耐熱性板2および通気性
多孔質セラミツク板3とをそれぞれ4枚づつ交互に積層
して重ね合わせて4組重ね合わせ体とする以外は、実施
例1におけると同一の条件で本発明法を実施し、AlN板
材(以下本発明AlN板材2という)を製造した。Example 2 As shown in the schematic sectional view of FIG.
While using a plate material 1 with a purity of 99.99%,
In Example 1 except that the high-purity Al plate material 1, the heat-resistant plate 2 and the breathable porous ceramic plate 3 are alternately laminated four by four to form a four-layer superposed body. The method of the present invention was carried out under the same conditions as above to produce an AlN sheet material (hereinafter referred to as the present invention AlN sheet material 2).
なお、この場合、例えば表面に彫刻などにより図形(パ
ターン)を描いた耐熱性板2を使用すれば、表面図形の
ある高純度AlN板素材の製造も可能である。In this case, if a heat-resistant plate 2 having a figure (pattern) drawn on the surface by engraving or the like is used, a high-purity AlN plate material having a surface figure can be manufactured.
つぎに、この結果得られた本発明AlN板材1、2につい
て、純度、熱伝導率、熱膨張係数、誘電率、および曲げ
強さを測定した。これらの測定結果を第1表に示した。
第1表には、比較の目的で粉末冶金法で製造された市販
の焼結AlN板材の特性値も示した。Next, the purity, thermal conductivity, thermal expansion coefficient, dielectric constant, and bending strength of the AlN plate materials 1 and 2 of the present invention obtained as a result were measured. The results of these measurements are shown in Table 1.
Table 1 also shows characteristic values of commercially available sintered AlN sheet materials manufactured by the powder metallurgy method for the purpose of comparison.
〔発明の効果〕 第1表に示される結果から、本発明AlN板材1、2は、
市販の焼結AlN板材に比して、高純度および高密度をも
つので、すぐれた熱的および電気的特性、並びに高強度
をもつことが明らかである。 [Effects of the Invention] From the results shown in Table 1, the AlN plate materials 1 and 2 of the present invention are
It is clear that it has excellent thermal and electrical properties and high strength because it has high purity and high density as compared with commercially available sintered AlN sheet material.
上述のように、この発明の方法によれば、理論密度比:1
00%、すなわち溶解材としての高純度AlN板材を、簡単
な操作で、コスト安く製造することができ、しかもこの
結果得られたAlN板材は、すぐれた熱的および電気的特
性、および高強度を有するので、例えばICパツケージの
基板や、AlNのもつているすぐれた透光性を利用する、
いわゆる機能性セラミツクス部材などとして用いた場合
にすぐれた性能を発揮するなど工業上有用な効果がもた
らされるのである。As mentioned above, according to the method of the present invention, the theoretical density ratio: 1
00%, that is, a high-purity AlN plate material as a melting material can be manufactured at a low cost by a simple operation, and the resulting AlN plate material has excellent thermal and electrical characteristics and high strength. Since it has, for example, the substrate of the IC package and the excellent translucency of AlN are used,
When it is used as a so-called functional ceramics member, it exhibits industrially useful effects such as excellent performance.
第1図および第2図はこの発明の方法の実施態様を示す
概略断面図である。 1……高純度Al板素材、2……耐熱性板、 3……通気性多孔質セラミツク板、 4……当て板、5……固定冶具、 6……炉心管、7……台板、 8……ヒーター。1 and 2 are schematic sectional views showing an embodiment of the method of the present invention. 1 ... High-purity Al plate material, 2 ... Heat-resistant plate, 3 ... Breathable porous ceramic plate, 4 ... Paddle plate, 5 ... Fixing jig, 6 ... Reactor tube, 7 ... Base plate, 8 ... heater.
Claims (2)
板素材と、通気性多孔質セラミツク板とをこの順に下か
ら上に重ね合わせて固定し、この状態で加熱炉におい
て、ガス雰囲気にて前記高純度Al板素材の表面酸化膜を
除去した後、窒素含有雰囲気中、Alの融点以上の所定温
度に所定時間加熱保持して、雰囲気中の窒素を前記通気
性多孔質セラミツク板を通して、溶融状態の前記高純度
Al板素材と反応させることを特徴とする高純度窒化アル
ミニウム板材の製造法。1. A heat-resistant plate that does not react with molten Al and high-purity Al
A plate material and an air-permeable porous ceramic plate are superposed and fixed in this order from bottom to top, and in this state in a heating furnace, after removing the surface oxide film of the high-purity Al plate material in a gas atmosphere, In a nitrogen-containing atmosphere, by heating and holding at a predetermined temperature higher than the melting point of Al for a predetermined time, the nitrogen in the atmosphere is passed through the air-permeable porous ceramic plate, and the high purity in a molten state is obtained.
A method for producing a high-purity aluminum nitride plate material characterized by reacting with an Al plate material.
板素材と、通気性多孔質セラミツク板とをこの順に下か
ら上に重ね合せたものを1組とし、これを2組以上重ね
て固定した状態で加熱炉において、ガス雰囲気にて前記
高純度Al板素材の表面酸化膜を除去した後、窒素含有雰
囲気中、Alの融点以上の所定温度に所定時間加熱保持し
て、雰囲気中の窒素を前記通気性多孔質セラミツク板を
通して、溶融状態の前記高純度Al板素材と反応させるこ
とを特徴とする高純度窒化アルミニウム板材の製造法。2. A heat-resistant plate that does not react with molten Al, and high-purity Al
The plate material and the breathable porous ceramic plate are superposed in this order from bottom to top to form one set, and two or more sets of these are stacked and fixed in a heating furnace in a gas atmosphere to produce the high-purity Al. After removing the surface oxide film of the plate material, in a nitrogen-containing atmosphere, by heating and holding at a predetermined temperature above the melting point of Al for a predetermined time, nitrogen in the atmosphere is passed through the air-permeable porous ceramic plate, A method for producing a high-purity aluminum nitride plate material characterized by reacting with a high-purity aluminum plate material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61262268A JPH0774100B2 (en) | 1986-11-04 | 1986-11-04 | Manufacturing method of high-purity aluminum nitride plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61262268A JPH0774100B2 (en) | 1986-11-04 | 1986-11-04 | Manufacturing method of high-purity aluminum nitride plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63117968A JPS63117968A (en) | 1988-05-21 |
| JPH0774100B2 true JPH0774100B2 (en) | 1995-08-09 |
Family
ID=17373429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61262268A Expired - Lifetime JPH0774100B2 (en) | 1986-11-04 | 1986-11-04 | Manufacturing method of high-purity aluminum nitride plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0774100B2 (en) |
-
1986
- 1986-11-04 JP JP61262268A patent/JPH0774100B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63117968A (en) | 1988-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2642573B2 (en) | SiC based sintered body | |
| JP2000058631A5 (en) | ||
| US20080039312A1 (en) | Ceramic base material | |
| CN111971789B (en) | Anisotropic graphite, anisotropic graphite composite and manufacturing method thereof | |
| JP2004521052A (en) | High purity, low resistivity electrostatic chuck | |
| JP2002193668A (en) | Oxide sintered body and its manufacturing method | |
| JPH05238830A (en) | Sintered aluminum nitride and its production | |
| KR100944829B1 (en) | Manufacturing method of jig and aluminum nitride sintered body | |
| JPH09275078A (en) | Silicon wafer holding jig | |
| JPH0774100B2 (en) | Manufacturing method of high-purity aluminum nitride plate | |
| JP2000119079A (en) | Si-SiC member for semiconductor heat treatment and method for producing the same | |
| JPS6236087A (en) | Granular sic-dispersed metal silicon heat-resistant material | |
| EP0885858B1 (en) | Recrystallized silicon carbide sintered material and manufacturing method thereof | |
| JPH08109069A (en) | Aluminum nitride sintered body | |
| JP2000351679A (en) | Method for producing porous silicon carbide body and porous silicon carbide body | |
| JPH02212365A (en) | Aluminum nitride substrate and its production | |
| JP3274756B2 (en) | Manufacturing method of ceramic green body | |
| JP3689830B2 (en) | Metal-ceramic composite member joining method | |
| JPH0891935A (en) | Aluminum nitride sintered body, method for manufacturing aluminum nitride sintered body, and circuit board | |
| JP4753195B2 (en) | Method for producing aluminum nitride sintered body | |
| JPS62216981A (en) | Manufacture of silicon carbide base composite material | |
| JPS61286264A (en) | Furnace center pipe for heating furnace and manufacture | |
| JP2000103677A (en) | Silicon-impregnated silicon carbide material for semiconductor heat treatment and method for producing the same | |
| JP2007063124A (en) | Ceramic substrate | |
| JPH02302088A (en) | Method of baking aluminum nitride substrate |