JPH0774118B2 - Method for manufacturing magneto-optical element - Google Patents
Method for manufacturing magneto-optical elementInfo
- Publication number
- JPH0774118B2 JPH0774118B2 JP10513187A JP10513187A JPH0774118B2 JP H0774118 B2 JPH0774118 B2 JP H0774118B2 JP 10513187 A JP10513187 A JP 10513187A JP 10513187 A JP10513187 A JP 10513187A JP H0774118 B2 JPH0774118 B2 JP H0774118B2
- Authority
- JP
- Japan
- Prior art keywords
- optical element
- magneto
- lattice constant
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 21
- 239000002223 garnet Substances 0.000 claims description 14
- 229910052797 bismuth Inorganic materials 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 239000007791 liquid phase Substances 0.000 claims description 7
- 230000002040 relaxant effect Effects 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 8
- 238000005204 segregation Methods 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 229910015372 FeAl Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は磁気光学素子の製造方法に関し、特にファラデ
ー効果を利用した光アイソレータ，光サーキュレータ，
光スイッチ等に用いられる磁気光学素子用ガーネット結
晶の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a magneto-optical element, and more particularly to an optical isolator, an optical circulator, and an optical circulator utilizing the Faraday effect.
The present invention relates to a method of manufacturing a garnet crystal for a magneto-optical element used for an optical switch or the like.
従来の技術 最近、光通信分野において、光源に用いられる半導体レ
ーザにおける戻り光誘起雑音が問題となっており、伝送
品質の低下をもたらしている。この問題を解決するため
に、光アイソレータが半導体レーザの出力段に設けられ
ている。1.3μｍ帯の長波長帯アイソレータには、電子
通信学会技術研究報告OQE78−133にある様に、Y3Fe5O12
（YIG）で表わされるイットリウム、鉄、ガーネット結
晶が用いられる。このYIGの波長1.3μｍにおけるファラ
デー回転角は220゜/cmであるので、光アイソレータに用
いる場合、偏光面を45゜回転させる結晶長として、約2.
1mm必要となる。このYIGの製法は、フラックス法又はフ
ローティングゾーン法によるものである。しかしなが
ら、これらの製法によるバルリ単結晶は、製造日数が長
く、又、一時に製造できる量が少ない事から、コストが
高くなる欠点がある。しかし、最近ではビスマスを含む
ガーネット結晶(BiRe)3Fe5O12（Re:希土類元素）が従来
のYIGに比較して、ファラデー回転角が一桁程度大き
く、必要な結晶長として、200〜500μｍと従来の1/10程
度で良い事から、光アイソレータに応用されようとして
いる。さらに、(BiRe)3Fe5O12結晶が、例えばGd3Ga5O12
（GGG）で表わされるガドリウム，ガリウムガーネット
基板上に、エピタキシャル法で200〜500μｍ成長する事
ができれば、格段の低コスト化が期待できる。2. Description of the Related Art Recently, in the field of optical communication, return light induced noise in a semiconductor laser used as a light source has become a problem, resulting in deterioration of transmission quality. In order to solve this problem, an optical isolator is provided at the output stage of the semiconductor laser. For the long-wavelength isolator in the 1.3 μm band, Y 3 Fe 5 O 12 is used as described in Technical Report OQE78-133 of the Institute of Electronics and Communication Engineers.
Yttrium, iron, and garnet crystals represented by (YIG) are used. The Faraday rotation angle of this YIG at a wavelength of 1.3 μm is 220 ° / cm, so when used in an optical isolator, the crystal length that rotates the polarization plane by 45 ° is approximately 2.
1mm is required. The YIG manufacturing method is based on the flux method or the floating zone method. However, the Barri single crystal produced by these production methods has a drawback that the production cost is high because the production days are long and the production amount is small at one time. However, recently, the garnet crystal (BiRe) 3 Fe 5 O 12 (Re: rare earth element) containing bismuth has a Faraday rotation angle about one digit larger than that of the conventional YIG, and the required crystal length is 200 to 500 μm. Since it is about 1/10 of the conventional one, it is about to be applied to optical isolators. Furthermore, a (BiRe) 3 Fe 5 O 12 crystal is, for example, Gd 3 Ga 5 O 12
If it is possible to grow 200 to 500 μm on the gadolinium or gallium garnet substrate represented by (GGG) by the epitaxial method, it is expected that the cost will be significantly reduced.
発明が解決しようとする問題点 しかしながら、基板に用いるGGGと(BiRe)3Fe5O12結晶の
熱膨張係数の差が大きく、例えば200〜500μｍの厚膜結
晶を成長させた場合、割れが生じ歩留りを著しく低下さ
せる問題点がある。Problems to be Solved by the Invention However, there is a large difference in thermal expansion coefficient between GGG and (BiRe) 3 Fe 5 O 12 crystals used for the substrate, and cracks occur when a thick film crystal of, for example, 200 to 500 μm is grown. There is a problem that the yield is significantly reduced.
問題点を解決するための手段 本発明は、上記問題点を解決するために、希土類ガリウ
ムガーネット結晶からなる基板上に、ビスマス及び鉄を
含むガーネット結晶をエピタキシャル法により成長させ
る際に、前記ビスマス及び鉄を含むガーネット結晶と前
記基板との間に、徐々にガリウム又はアルミニウム濃度
が変化するビスマス及び鉄及びガリウム又はアルミニウ
ムを含むガーネット結晶からなる格子定数差緩和層を設
けるものであり、具体的には成長速度を徐々に変化させ
る事により格子定数差緩和層を得るものであり、さら
に、前記基板の回転数を徐々に変化させて格子定数差緩
和層を得るものであり、さらに気相成長法においては前
記基板の温度を徐々に変化させて格子定数差緩和層を得
るものである。Means for Solving the Problems The present invention, in order to solve the above problems, in growing a garnet crystal containing bismuth and iron on a substrate made of a rare earth gallium garnet crystal by an epitaxial method, the bismuth and Between the garnet crystal containing iron and the substrate, a lattice constant difference relaxation layer made of bismuth and garnet crystal containing iron and gallium or aluminum in which the gallium or aluminum concentration gradually changes is provided, and specifically, It is intended to obtain a lattice constant difference relaxation layer by gradually changing the growth rate, and further to obtain the lattice constant difference relaxation layer by gradually changing the rotation speed of the substrate. Is to gradually change the temperature of the substrate to obtain a lattice constant difference relaxation layer.
作用 本発明は上記した方法により、割れの発生が無く、歩留
り良く所望の厚みのビスマス及び鉄を含むガーネット結
晶が得られるものであり、以下にその理由を述べる。Action The present invention is to obtain a garnet crystal containing bismuth and iron with a desired thickness without cracking and with a good yield by the above-mentioned method. The reason will be described below.
問題点で述べた様に、直接GGG基板上にビスマス及び鉄
を含むガーネット結晶例えば、(BiRe)3Fe5O12を液相エ
ピタキシャル法で成長させる時に割れが発生し、著しく
歩留りを悪化させるのは、熱膨張係数がGGGで8.6×10-6
〔1/℃〕，(BiRe)3Fe5O12が約11×10-6〔1/℃〕と大き
な差が有るためで有る。従って、第３図に示す様に、室
温で格子定数が一致していても、成長温度での格子定数
差が大きく、割れの原因となる。しかし、第１図に示す
様に、熱膨張係数と格子定数が、基板１と(BiRe)3Fe5O
12３の中間の値であり、その値が徐々に変化する格子定
数差を緩和する結晶層２を設置する事によって、結晶の
割れを防ぐ事ができる。一般に、第２図に示すように(B
iRe)3(FeGa)5O12、又は(BiRe)3(FeAl)5O12結晶において
は、Bi濃度が増加すると、膨張係数は大きくなり、格子
定数も大きくなる。逆に、Ga又はAlの濃度が増加する
と、膨張係数は小さくなり、格子定数も小さくなる。従
って、基板１と(BiRe)3Fe5O12結晶３の間の格子定数差
緩和層として、Bi及びGa又はAlの濃度が徐々に変化する
結晶を使用する事ができる。As mentioned in the problem, garnet crystals containing bismuth and iron directly on the GGG substrate, for example, when growing (BiRe) 3 Fe 5 O 12 by the liquid phase epitaxial method, cracks occur, which significantly deteriorates the yield. Has a thermal expansion coefficient of GGG of 8.6 × 10 -6
This is because there is a large difference between [1 / ° C] and (BiRe) 3 Fe 5 O 12 of approximately 11 × 10 -6 [1 / ° C]. Therefore, as shown in FIG. 3, even if the lattice constants are the same at room temperature, the lattice constant difference at the growth temperature is large, which causes cracking. However, as shown in FIG. 1, the coefficient of thermal expansion and the lattice constant are different from those of the substrate 1 and (BiRe) 3 Fe 5 O.
12 3 a of the intermediate value, by placing the crystalline layer 2 to reduce lattice constant difference whose value gradually changes, it is possible to prevent the cracking of crystals. Generally, as shown in FIG.
In the iRe) 3 (FeGa) 5 O 12 or (BiRe) 3 (FeAl) 5 O 12 crystal, as the Bi concentration increases, the expansion coefficient increases and the lattice constant also increases. On the contrary, when the concentration of Ga or Al increases, the expansion coefficient decreases and the lattice constant also decreases. Therefore, as the lattice constant difference relaxing layer between the substrate 1 and the (BiRe) 3 Fe 5 O 12 crystal 3, a crystal in which the concentrations of Bi and Ga or Al gradually change can be used.
さらに、Bi及びGa又はAlの濃度を徐々に変化させる方法
として、成長速度を徐々に変化させ、エピタキシャル成
長時の偏析の成長速度依存性を利用する。エピタキシャ
ル成長における有効偏析係数（keff）は一般に固相と液
相中の濃度比であるが、成長中の定常状態では、 となる。ここで、koは平衡偏析係数、ｆは成長速度、δ
は拡散層の厚み、Ｄは液相中での拡散定数である。(1)
式からわかる様に、Biの様にko＜１の場合、成長速度ｆ
を大きくすれば、有効偏析係数keffは大きくなり、逆
に、GaやAlの様にko＜１の場合、成長速度ｆを大きくす
れば有効偏析係数keffは小さくなる。従って、(BiRe)
3(FeGa)5O12又は、(BiRe)3(FeAl)5O12の成長速度を徐々
に大きくする事により、第２図に示した格子定数と熱膨
張係数を持った格子定数差緩和層を得る事ができる。成
長速度ｆは、基板の回転数、成長温度を変化させる事に
より、制御する事ができる。Further, as a method of gradually changing the concentrations of Bi and Ga or Al, the growth rate is gradually changed and the growth rate dependence of segregation during epitaxial growth is used. The effective segregation coefficient (k eff ) in epitaxial growth is generally the concentration ratio between the solid phase and the liquid phase, but in the steady state during growth, Becomes Where k o is the equilibrium segregation coefficient, f is the growth rate, and δ
Is the thickness of the diffusion layer, and D is the diffusion constant in the liquid phase. (1)
As can be seen from the formula, when k o <1 as in Bi, the growth rate f
The effective segregation coefficient k eff is increased by increasing, and conversely, when k o <1 like Ga and Al, the effective segregation coefficient k eff is decreased by increasing the growth rate f. Therefore, (BiRe)
By gradually increasing the growth rate of 3 (FeGa) 5 O 12 or (BiRe) 3 (FeAl) 5 O 12 , the lattice constant difference relaxation layer having the lattice constant and the thermal expansion coefficient shown in FIG. Can be obtained. The growth rate f can be controlled by changing the rotation speed of the substrate and the growth temperature.
実 施 例 本発明の一実施例の構造を第１図に示す。本実施例で
は、基板にCa−Mg−Zn置換GGG結晶１、格子定数差緩和
層２に(BiGdLu)3(FeGa)5O12を用い、その上に(BiGdLu)3
Fe5O12、３を成長させる場合、格子定数差緩和層を得る
のに成長温度を変化させる事を利用した、液相エピタキ
シャル成長による製造方法を示す。基板の格子定数は1
2.497ÅであるCa−Mg−Zn置換Gd3Ga5O12結晶を用いた。
成長に用いたフラックスは、PbO−Bi2O3−B2O3系であ
り、水平ディピング法で基板回転数を100rpmとした。格
子定数差緩和層は、組成が、(Bi0.8Gd1.2Lu1.0)(Fe4.3G
a0.7)O12から(Bi0.9Gd1.1Lu1.0)(Fe4.0Ga1.0)O12まで30
μｍの厚みに渡って徐々に変化するものを、成長温度を
10deg変化させる事によって得た。さらにその上に、(Bi
1.0Gd1.0Lu1.0)Fe5O12結晶を300μｍの厚みで、割れの
発生がなく、成長を行った。また、この実施例において
は各層の格子定数差（Δa/a）は、３×10-4以内におさ
まっており、極めて結晶性の良い物であった。なお本実
施例では、格子定数差緩和層に(BiGdLu)3(FeGa)5O12を
用いたが、(BiRe)3(FeAl)5O12でも良好な結果を得てい
る。また格子定数差緩和層を得るのに、成長温度の変化
による成長速度の変化を利用したが、基板の回転数を変
化させる事を利用してもよい。さらに本実施例は、液相
エピタキシャル成長法を用いた場合について述べて来た
が、(1)式で示される様な拡散律速で成長が行われてい
る成長法、例えば、スパッタ法やCVD法などの気相成長
に対しても適用できるものである。Example FIG. 1 shows the structure of an example of the present invention. In this embodiment, Ca-Mg-Zn-substituted GGG crystal 1 to the substrate, using the lattice constant difference relaxing layer 2 (BiGdLu) 3 (FeGa) 5 O 12, thereon (BiGdLu) 3
When growing the Fe 5 O 12, 3, utilizing the fact that changes the growth temperature to obtain a lattice constant difference relaxing layer, showing a manufacturing method by the liquid phase epitaxial growth. The lattice constant of the substrate is 1
Using Ca-Mg-Zn-substituted Gd 3 Ga 5 O 12 crystal is 2.497A.
Flux used for growth is a PbO-Bi 2 O 3 -B 2 O 3 system, was 100rpm the substrate rotation speed in the horizontal dipping method. The lattice constant difference relaxation layer has a composition of (Bi 0.8 Gd 1.2 Lu 1.0 ) (Fe 4.3 G
a 0.7 ) O 12 to (Bi 0.9 Gd 1.1 Lu 1.0 ) (Fe 4.0 Ga 1.0 ) O 12 30
The growth temperature is set to the value that gradually changes over the thickness of μm.
Obtained by changing 10deg. On top of that, (Bi
A 1.0 Gd 1.0 Lu 1.0 ) Fe 5 O 12 crystal having a thickness of 300 μm was grown without cracking. Further, in this example, the difference in lattice constant (Δa / a) between the layers was within 3 × 10 −4 , and the crystallinity was extremely good. In this example, (BiGdLu) 3 (FeGa) 5 O 12 was used for the lattice constant difference relaxation layer, but (BiRe) 3 (FeAl) 5 O 12 also showed good results. Further, in order to obtain the lattice constant difference relaxation layer, the change in the growth rate due to the change in the growth temperature is used, but it is also possible to use the change in the rotation speed of the substrate. Further, the present embodiment has described the case where the liquid phase epitaxial growth method is used. It is also applicable to the vapor phase growth of.
発明の効果 以上述べてきた様に、本発明による製造方法を用いて、
基板との間に、熱膨張係数の差を緩和するための、格子
定数差緩和層を設けることにより、割れの発生が無く、
歩留り良く、所望の磁気光学素子を得ることができ、そ
の工業的価値は大なるものがある。Effects of the Invention As described above, using the manufacturing method according to the present invention,
By providing a lattice constant difference relaxation layer for relaxing the difference in thermal expansion coefficient between the substrate and the substrate, no cracks occur,
A desired magneto-optical element can be obtained with a good yield, and its industrial value is great.
第１図は本発明の一実施例による製造方法を説明するた
めの断面図、第２図は本実施例方法の作用を説明するた
めの特性図、第３図は従来方法を説明するための特性図
である。 １……GGG基板、２……格子定数差緩和層、３……(BiR
e)3Fe5O12結晶。FIG. 1 is a sectional view for explaining a manufacturing method according to an embodiment of the present invention, FIG. 2 is a characteristic view for explaining the operation of the method of the present embodiment, and FIG. 3 is for explaining a conventional method. It is a characteristic diagram. 1 …… GGG substrate, 2 …… Lattice constant difference relaxation layer, 3 …… (BiR
e) 3 Fe 5 O 12 crystal.
Claims (4)
板上に、ビスマス，及び鉄を含むガーネット結晶をエピ
タキシャル法により成長させるに際し、前記ビスマス及
び鉄を含むガーネット結晶と前記基板との間に、徐々に
ビスマス及びガリウム又はアルミニウム濃度が変化する
ビスマス及び鉄及びガリウム又はアルミニウムを含むガ
ーネット結晶からなる格子定数差緩和層を設けるように
した磁気光学素子の製造方法。1. When growing a garnet crystal containing bismuth and iron on a substrate made of a rare earth gallium garnet crystal by an epitaxial method, bismuth is gradually added between the garnet crystal containing bismuth and iron and the substrate. And a method for manufacturing a magneto-optical element, wherein a lattice constant difference relaxation layer made of a garnet crystal containing bismuth and gallium or aluminum with varying gallium or aluminum concentration is provided.
キシャル法により行うものとし、成長速度を徐々に変化
させることにより格子定数差緩和層を得るようにした特
許請求の範囲第１項記載の磁気光学素子の製造方法。2. The magneto-optical element is manufactured by liquid phase and vapor phase epitaxial methods, and the lattice constant difference relaxation layer is obtained by gradually changing the growth rate. Of manufacturing a magneto-optical element of.
キシャル法により行うものとし、基板の回転数を徐々に
変化させることにより格子定数差緩和層を得るようにし
た特許請求の範囲第１項記載の磁気光学素子の製造方
法。3. A magneto-optical element is manufactured by liquid phase and vapor phase epitaxial methods, and a lattice constant difference relaxing layer is obtained by gradually changing the rotation speed of a substrate. A method for manufacturing a magneto-optical element according to the item.
の気相成長法により行うものとし、基板の温度を徐々に
変化させることにより格子定数差緩和層を得るようにし
た特許請求の範囲第１項記載の磁気光学素子の製造方
法。4. A magneto-optical element is manufactured by a vapor phase growth method such as a sputtering method or a CVD method, and the lattice constant difference relaxing layer is obtained by gradually changing the temperature of the substrate. A method of manufacturing a magneto-optical element according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10513187A JPH0774118B2 (en) | 1987-04-28 | 1987-04-28 | Method for manufacturing magneto-optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10513187A JPH0774118B2 (en) | 1987-04-28 | 1987-04-28 | Method for manufacturing magneto-optical element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63270396A JPS63270396A (en) | 1988-11-08 |
| JPH0774118B2 true JPH0774118B2 (en) | 1995-08-09 |
Family
ID=14399208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10513187A Expired - Fee Related JPH0774118B2 (en) | 1987-04-28 | 1987-04-28 | Method for manufacturing magneto-optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0774118B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63291028A (en) * | 1987-05-25 | 1988-11-28 | Furukawa Electric Co Ltd:The | Farady element |
| CA2123978A1 (en) * | 1991-11-22 | 1993-05-27 | Richard James Milner | Insect pest control |
| JP7348142B2 (en) * | 2020-07-03 | 2023-09-20 | 信越化学工業株式会社 | Method for producing bismuth-substituted rare earth iron garnet single crystal film |
-
1987
- 1987-04-28 JP JP10513187A patent/JPH0774118B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63270396A (en) | 1988-11-08 |
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