JPH0774843B2 - Optical element manufacturing method - Google Patents
Optical element manufacturing methodInfo
- Publication number
- JPH0774843B2 JPH0774843B2 JP60029595A JP2959585A JPH0774843B2 JP H0774843 B2 JPH0774843 B2 JP H0774843B2 JP 60029595 A JP60029595 A JP 60029595A JP 2959585 A JP2959585 A JP 2959585A JP H0774843 B2 JPH0774843 B2 JP H0774843B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- substrate
- optical element
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 14
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 10
- 239000005711 Benzoic acid Substances 0.000 claims description 7
- 235000010233 benzoic acid Nutrition 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- 238000005342 ion exchange Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はコヒーレント光を利用する光情報処理分野ある
いは光応用計測制御分野に使用する光素子の製造方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical element used in the field of optical information processing using coherent light or the field of optical measurement and control.
従来の技術 LiNbO3などの強誘電体基板を安息香酸などの酸中で熱処
理して作製されるイオン交換光導波路は、基板上に対す
る屈折率差が大きく各種デバイスを構成する上で非常に
重要である。ジェー．エル．ジャッケル，シー．イー．
ライス及びジェー．ジェー．ベセルカ“プロトン イク
スチェンジ フォー ハイー インデックス ウェイブ
ガイド イン LiNbO3",アプライド フィジクス レタ
ー,41巻,7号607-608頁（1982）（J.L.Jackel,C.E.Rice
and J.J.Veselka,“Proton exchange for high-index w
aveguides in LiNbO3",Appl.Phys.Lett,Vol.41,No.7,P
P.607-608（1982））参照 第３図に従来のイオン交換法を用いた光導波路の製造方
法の工程図を示す。同図ａのように強誘電体であるLiNb
O3基板１上に保護マスクとなるAl膜２′を蒸着により10
00Å程度形成する。次に同図ｂのようにフォトレジスト
３でパターニングを行う。次に同図ｃのようにリン酸系
エッチング液を用いてAl膜２′をエッチングを行い窓４
を形成した後、フォトレジスト３を除去する。次に同図
ｄのようにLiNbO3基板１を安息香酸（230℃）中で40分
熱処理を行うことで窓４の部分で安息香酸中のH+とLiNb
O3基板１中のLi+との交換が起り高屈折率部である光導
波路５が形成される。最後にAl膜２′を除去する。Al膜
は導波光を吸収するからである。このようにして深さ１
μm,幅６μｍの光導波路が形成される。Conventional technology An ion-exchange optical waveguide made by heat-treating a ferroelectric substrate such as LiNbO 3 in an acid such as benzoic acid has a large difference in refractive index with respect to the substrate and is extremely important in constructing various devices. is there. J. Elle. Jackel, Sea. E.
Rice and J. J. Beselka “Proton Exchange for High Index Wave Guide in LiNbO 3 ”, Applied Physics Letters, Vol. 41, No. 7, pp. 607-608 (1982) (JLJackel, CERice)
and JJVeselka, “Proton exchange for high-index w
aveguides in LiNbO 3 ", Appl.Phys.Lett, Vol.41, No.7, P
See P.607-608 (1982)) Fig. 3 shows a process diagram of a conventional method for manufacturing an optical waveguide using an ion exchange method. LiNb, which is a ferroelectric substance, as shown in FIG.
An Al film 2'which serves as a protective mask is formed on the O 3 substrate 1 by vapor deposition.
Form about 00Å. Next, patterning is performed with the photoresist 3 as shown in FIG. Next, the Al film 2'is etched using a phosphoric acid-based etching solution as shown in FIG.
After forming, the photoresist 3 is removed. Next, as shown in FIG. 3D, the LiNbO 3 substrate 1 was heat-treated in benzoic acid (230 ° C.) for 40 minutes, so that H + and LiNb in the benzoic acid in the window 4 portion.
Exchange with Li + in the O 3 substrate 1 occurs to form the optical waveguide 5 which is a high refractive index portion. Finally, the Al film 2'is removed. This is because the Al film absorbs the guided light. Depth 1
An optical waveguide having a width of 6 μm and a width of 6 μm is formed.
また同様にAl膜の代りにSi3N4膜を用いた例もある。Similarly, there is an example in which a Si 3 N 4 film is used instead of the Al film.
発明が解決しようとする問題点 上記のようなAl膜などの金属膜を保護マスクとしてイオ
ン交換法を行い光導波路を作製する場合、そのまま金属
膜を残しておくと導波光を吸収するので最後に除去の工
程が必要となっていた。Problems to be Solved by the Invention When manufacturing an optical waveguide by performing an ion exchange method using a metal film such as the Al film as a protective mask as described above, if the metal film is left as it is, the guided light is absorbed. A removal process was needed.
また金属の拡散による光損傷の影響が心配されていた。In addition, there was concern about the effect of light damage due to metal diffusion.
これに対してSi3N4膜を保護マスクとして用いた場合、S
i3N4膜の屈折率が1.9と高く導波光の形状が変形するな
どの問題があるためこの場合も除去の工程が必要となっ
ていた。On the other hand, when the Si 3 N 4 film is used as a protective mask, S
Since the refractive index of the i 3 N 4 film is as high as 1.9 and the shape of the guided light is deformed, the removal process is required also in this case.
問題点を解決するための手段 本発明は上記問題点を解決するため、LiNbO3、LiTaO3ま
たはKNbO3基板上にSiO2パターンを形成する工程と、SiO
2パターンが形成された基板を酸中で熱処理し、基板中
に高屈折率層を形成する工程とを有し、高屈折率層を形
成した後は、SiO2パターンを残す光素子の製造方法にし
た。Means for Solving the Problems In order to solve the above problems, the present invention comprises a step of forming a SiO 2 pattern on a LiNbO 3 , LiTaO 3 or KNbO 3 substrate, and SiO 2.
And a step of forming a high-refractive-index layer in the substrate by heat-treating the substrate on which the two- pattern is formed, and after forming the high-refractive-index layer, a method for manufacturing an optical element in which an SiO 2 pattern is left I chose
作用 本発明は、光素子を製造する際屈折率が基板に対して充
分低い透明絶縁膜による保護マスクパターンであるSiO2
を用いることにより、導波光の形状が変形することがな
く、除去工程を省くことができる。Effect The present invention is a protective mask pattern formed of a transparent insulating film having a refractive index sufficiently lower than that of a substrate when manufacturing an optical element, SiO 2
By using, the shape of the guided light is not deformed, and the removing step can be omitted.
実施例 本発明の光素子の製造方法の第１の実施例の工程図を第
１図に示す。同図ａにおいて強誘電体であるLiNbO3基板
１上にスパッタ蒸着によりSiO2膜２を300Å程度蒸着を
行う。次に同図ｂにおいてSiO2膜２上にフォトプロセス
技術を用いてフォトレジストパターン３を形成する。そ
して同図ｃにおいてフッ酸系のエッチング液でフォトレ
ジストパターン３をマスクとしてSiO2を化学エッチング
した後フォトレジストパターン３を除去する。このよう
にして窓４が形成される。最後に同図ｄにおいて安息香
酸（230℃）中で40分熱処理を行うことで窓４の部分で
イオン交換が起り光導波路５が形成される。この際、Si
O2膜２はイオン交換を阻止する保護マスクとしての働き
をしている。このようにして幅６μm,深さ１μｍの光導
波路５が製造される。Example FIG. 1 shows a process chart of a first example of a method for manufacturing an optical element of the present invention. In FIG. 3A, a SiO 2 film 2 is vapor-deposited on the LiNbO 3 substrate 1, which is a ferroelectric substance, by sputtering by about 300 Å. Next, in FIG. 3B, a photoresist pattern 3 is formed on the SiO 2 film 2 by using a photo process technique. And removing the photoresist pattern 3 after a SiO 2 was chemically etched using the photoresist pattern 3 by an etching solution of hydrofluoric acid as a mask in FIG c. In this way, the window 4 is formed. Finally, in FIG. 3D, heat treatment is performed in benzoic acid (230 ° C.) for 40 minutes to cause ion exchange in the window 4 portion and the optical waveguide 5 is formed. At this time, Si
The O 2 film 2 functions as a protective mask that prevents ion exchange. In this way, the optical waveguide 5 having a width of 6 μm and a depth of 1 μm is manufactured.
SiO2膜２は屈折率1.5とLiNbO3基板１上の光導波路５の
屈折率2.3に比べて充分小さく導波光の形状に乱れを生
じさせないので除去する必要はない。またSiO2膜２はイ
オン交換阻止効果大なので300Å程度の薄さでも充分マ
スクとして働くので蒸着、エッチングの工程も簡単とな
る。また安息香酸を使用することで光導波路表面を荒す
ことなくイオン交換を行える。さらに本実施例では化学
エッチングを行っているためSiO2膜に形成された窓の部
分が非常に滑らかになり、従って形成される光導波路の
伝搬ロスも小さくなる。The SiO 2 film 2 is sufficiently smaller than the refractive index of 1.5 and the refractive index of 2.3 of the optical waveguide 5 on the LiNbO 3 substrate 1 and does not disturb the shape of the guided light, and therefore need not be removed. Further, since the SiO 2 film 2 has a great effect of inhibiting ion exchange, even a thin film of about 300 Å works sufficiently as a mask, so that the steps of vapor deposition and etching are simplified. Also, by using benzoic acid, ion exchange can be performed without roughening the surface of the optical waveguide. Further, in this embodiment, since the chemical etching is performed, the window portion formed in the SiO 2 film becomes very smooth, and therefore the propagation loss of the formed optical waveguide becomes small.
（実施例２） 本発明の光素子の製造方法の第２の実施例の工程図を第
２図に示す。同図ａにおいて強誘電体であるLiNbO3基板
１上にフォトレジストパターン３を形成する。次に同図
ｂにおいてスパッタ蒸着によりSiO2膜２を300Å程度蒸
着を行う。次に同図ｃにおいてアセトン中でリフトオフ
を行いフォトレジストパターン３を除去する。このよう
にして窓４が形成される。最後に同図ｄにおいて安息香
酸中で熱処理を行うことで窓４の部分に光導波路５が形
成される。(Embodiment 2) FIG. 2 shows a process drawing of a second embodiment of the method for manufacturing an optical element of the present invention. In FIG. 3A, a photoresist pattern 3 is formed on a LiNbO 3 substrate 1 which is a ferroelectric substance. Next, in FIG. 2B, the SiO 2 film 2 is vapor-deposited by about 300 Å by sputter vapor deposition. Next, in FIG. 7C, lift-off is performed in acetone to remove the photoresist pattern 3. In this way, the window 4 is formed. Finally, in FIG. 3D, heat treatment is performed in benzoic acid to form the optical waveguide 5 in the window 4.
発明の効果 本発明の光素子の製造方法によれば、SiO2を保護マスク
として用いることにより、保護マスク除去工程を省略し
ても、導波光の形状に影響を与えることはなく、その工
業的価値は大きい。EFFECTS OF THE INVENTION According to the method for manufacturing an optical element of the present invention, by using SiO 2 as a protective mask, even if the protective mask removing step is omitted, it does not affect the shape of guided light, Great value.
第１図は本発明の光素子の製造方法の第１の実施例の工
程図、第２図は本発明の光素子の製造方法の第２の実施
例の工程図、第３図は従来の光導波路の製造方法の工程
図である。 １……LiNbO3基板、２……SiO2膜、５……光導波路。FIG. 1 is a process drawing of the first embodiment of the method for manufacturing an optical element of the present invention, FIG. 2 is a process drawing of the second embodiment of the method of manufacturing an optical element of the present invention, and FIG. It is process drawing of the manufacturing method of an optical waveguide. 1 ... LiNbO 3 substrate, 2 ... SiO 2 film, 5 ... optical waveguide.
Claims (2)
パターンを形成する工程と、 前記SiO2パターンが形成された基板を酸中で熱処理し、
前記パターンを用いて前記基板中に高屈折率層を形成す
る工程とを有し、 前記高屈折率層を形成した後、前記SiO2パターンを残す
ことを特徴とする光素子の製造方法。1. A SiO 2 on a LiNbO 3 , LiTaO 3 or KNbO 3 substrate.
A step of forming a pattern, and heat treating the substrate on which the SiO 2 pattern is formed in an acid,
Forming a high refractive index layer in the substrate using the pattern, and leaving the SiO 2 pattern after forming the high refractive index layer.
する特許請求の範囲第１項記載の光素子の製造方法。2. The method for producing an optical element according to claim 1, wherein benzoic acid is used as the acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60029595A JPH0774843B2 (en) | 1985-02-18 | 1985-02-18 | Optical element manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60029595A JPH0774843B2 (en) | 1985-02-18 | 1985-02-18 | Optical element manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61188502A JPS61188502A (en) | 1986-08-22 |
| JPH0774843B2 true JPH0774843B2 (en) | 1995-08-09 |
Family
ID=12280428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60029595A Expired - Fee Related JPH0774843B2 (en) | 1985-02-18 | 1985-02-18 | Optical element manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0774843B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6466905A (en) * | 1987-09-08 | 1989-03-13 | Chichibu Cement Kk | Manufacture of thermistor |
| EP0397895A1 (en) * | 1989-05-13 | 1990-11-22 | SELENIA INDUSTRIE ELETTRONICHE ASSOCIATE S.p.A. | Method for the fabrication of LiNbO3 single mode planar optical guide lenses |
| CN106291816B (en) * | 2015-05-12 | 2019-07-26 | 中兴通讯股份有限公司 | A method of improving glass based optical waveguide chip uniformity |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5520563U (en) * | 1978-07-26 | 1980-02-08 |
-
1985
- 1985-02-18 JP JP60029595A patent/JPH0774843B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61188502A (en) | 1986-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |