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JPH0774859B2 - Mask observation device - Google Patents
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JPH0774859B2 - Mask observation device - Google Patents

Mask observation device

Info

Publication number
JPH0774859B2
JPH0774859B2 JP2105984A JP2105984A JPH0774859B2 JP H0774859 B2 JPH0774859 B2 JP H0774859B2 JP 2105984 A JP2105984 A JP 2105984A JP 2105984 A JP2105984 A JP 2105984A JP H0774859 B2 JPH0774859 B2 JP H0774859B2
Authority
JP
Japan
Prior art keywords
mask
light
illumination
epi
microscope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2105984A
Other languages
Japanese (ja)
Other versions
JPS60164715A (en
Inventor
正樹 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2105984A priority Critical patent/JPH0774859B2/en
Publication of JPS60164715A publication Critical patent/JPS60164715A/en
Publication of JPH0774859B2 publication Critical patent/JPH0774859B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00Microscopes
    • G02B21/06Means for illuminating specimens

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Microscoopes, Condenser (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体等の製造に使用する低反射率のマスク
観察装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low reflectance mask observing apparatus used for manufacturing semiconductors and the like.

従来例の構成とその問題点 従来の落射照明顕微鏡による、低反射率マスクの観察方
法は第1図〜第3図にその具体例を示すように、落射照
明装置を有する顕微鏡の対物レンズ1の下方にガラス基
板2の下面に遮光パターン3を有するマスク4を置き、
さらにその下方に第1図の如く何も置かないか、第2図
の如く乱反射板5を置くか、第3図の如く平面反射鏡6
を置くものであり、落射照明光は対物レンズ1を通し
て、光の経路7と8の間を満たして落射され、顕微鏡の
焦点の合うマスク4の遮光パターン3付近に落射照明光
7〜8も集束し、その後第1図の従来例においては、下
方に透過発散し、第2図の従来例においては、下方の乱
反射板5で乱反射し、乱反射光の一部がマスク4の遮光
パターン3の無い部分を通して対物レンズ1に戻り、第
3図の従来例では、下方の正反射鏡6で正反射し、光の
経路9,10の如く広がって進み、照明光の一部が対物レン
ズ1に戻るものであった。
Configuration of Conventional Example and Problems Thereof A conventional method of observing a low-reflectance mask by an epi-illumination microscope is shown in FIG. 1 to FIG. A mask 4 having a light shielding pattern 3 is placed on the lower surface of the glass substrate 2 below,
Further, nothing is placed below it as shown in FIG. 1, a diffuse reflection plate 5 is placed as shown in FIG. 2, or a plane reflecting mirror 6 is placed as shown in FIG.
The epi-illumination light is incident through the objective lens 1 so as to fill the space between the light paths 7 and 8, and the epi-illumination lights 7 to 8 are also focused near the light-shielding pattern 3 of the mask 4 in which the microscope is in focus. After that, in the conventional example of FIG. 1, the light is transmitted and diverged downward, and in the conventional example of FIG. 2, it is diffusely reflected by the lower diffuse reflection plate 5, and a part of the diffusely reflected light does not have the light shielding pattern 3 of the mask 4. Returning to the objective lens 1 through the portion, in the conventional example of FIG. 3, the light is specularly reflected by the regular reflection mirror 6 below, spreads and travels as the paths 9 and 10 of the light, and part of the illumination light returns to the objective lens 1. It was a thing.

しかしながら上記のような構成では、マスク4の遮光パ
ターン3の材質が一般に多く用いられる低反射率のもの
である場合、遮光パターン3の無い部分を透過した照明
光は第1図のものにおいては、対物レンズ1に戻らない
ので、顕微鏡で観察した時には、暗黒の背景の中に灰色
の遮光パターン3が低コントラストで見えるだけであ
り、第2図,第3図のものにおいては、うす明るい背景
の中に黒色の遮光パターン3がやはり低コントラストで
見えるだけで、いづれも低コントラストで見にくいもの
であり、第2図,第3図の場合には、対物レンズ1に下
方より入射する反射光の焦点が観察すべき遮光パターン
に合っていないので、顕微鏡の分解能が低下し、合焦点
位置も不明確となって像が良く見えなくなるという欠点
を有し、特にテレビカメラ等による顕微鏡観察において
は像が良く見えないという欠点を有していた。
However, in the above configuration, when the material of the light-shielding pattern 3 of the mask 4 has a low reflectance, which is generally used, the illumination light transmitted through the portion without the light-shielding pattern 3 is as shown in FIG. Since it does not return to the objective lens 1, when viewed under a microscope, the gray light-shielding pattern 3 can only be seen in a dark background with a low contrast, and in FIGS. The black light-shielding pattern 3 is only visible in the inside with low contrast, and it is difficult to see with low contrast in either case. In the case of FIGS. 2 and 3, the focus of the reflected light incident on the objective lens 1 from below is low. Since it does not match the light-shielding pattern to be observed, it has the drawback that the resolution of the microscope decreases and the in-focus position becomes unclear, making it difficult to see the image. In microscopic observation with camera or the like has a disadvantage in that the image is not well visible.

発明の目的 本発明は上記欠点に鑑み、低反射率マスクの検査及び測
定において、下方よりの透過光照明が利用できない場合
に落射照明顕微鏡を用いて、像のコントラストが良く、
合焦点位置も明確で、像の分解能も良い観察装置を提供
するものである。
The present invention, in view of the above drawbacks, in the inspection and measurement of the low reflectance mask, using the epi-illumination microscope when the transmitted light illumination from below cannot be used, the image contrast is good,
This provides an observation apparatus in which the in-focus position is clear and the image resolution is good.

発明の構成 本発明のマスク観察装置は、被観察マスクに対し、一方
に置いた落射照明顕微鏡と、反対側に置いた光を入射方
向に反射する反射板とから構成されており、反射板は、
微小な球状ガラスを平面に密に並べて固定したものであ
り、低反射率マスクのパターン観察において、像のコン
トラストと分解能が良く合焦点位置も明確となるという
特有の効果を有する。
Configuration of the invention, the mask observation apparatus of the present invention, for the mask to be observed, epi-illumination microscope placed on one side, and a reflection plate placed on the opposite side to reflect light in the incident direction, the reflection plate is ,
It is a structure in which minute spherical glasses are densely arranged and fixed on a plane, and has a unique effect that the contrast and resolution of an image are good and the focusing position is clear in pattern observation of a low reflectance mask.

実施例の説明 以下本発明の一実施例について第4図を参照しながら説
明する。11は落射照明装置を有する顕微鏡の対物レン
ズ、12は対物レンズ11の下方に置いたマスク14のガラス
基板、13はマスク14の被観察物である低反射率遮光パタ
ーン、15はマスク14のさらに下方に置いた入射光とほぼ
反対方向に光を反射する反射板であり、その構造は、微
小な球状ガラス16をシート17上に密に並べ光を透過させ
る樹脂18にて固定したものである。
Description of Embodiments One embodiment of the present invention will be described below with reference to FIG. Reference numeral 11 is an objective lens of a microscope having an epi-illumination device, 12 is a glass substrate of a mask 14 placed below the objective lens 11, 13 is a low-reflectance light-shielding pattern which is an object to be observed of the mask 14, and 15 is a mask of the mask 14. It is a reflector that reflects light in a direction substantially opposite to the incident light placed below, and its structure is such that minute spherical glass 16 is densely arranged on a sheet 17 and fixed by a resin 18 that transmits light. .

以上のように構成された顕微鏡観察装置について、以下
その動作を説明する。落射照明光は光の経路19,20の間
を満たして、マスク14の観察個所にほぼ焦点を結ぶよう
に落射され、遮光パターン13に当った部分は大部分が吸
収され、マスク14の透過部分を通った光は反射板15に当
り、大部分の光が内部の微小な球状ガラスにより屈折及
び反射して、光の経路21,22の如くほぼ入射方向に反射
して、再びマスク14の観察個所にほぼ焦点を結びさらに
進んで対物レンズ11に入り、観察者には、明るい背景の
中に遮光パターン13が黒色で明瞭に見え、顕微鏡の合焦
点位置も明確になる。
The operation of the microscope observing apparatus configured as described above will be described below. The epi-illumination light fills the space between the light paths 19 and 20 and is incident so as to focus substantially on the observation portion of the mask 14, and most of the portion hitting the light shielding pattern 13 is absorbed, and the transmitted portion of the mask 14 The light that has passed through hits the reflection plate 15, and most of the light is refracted and reflected by the minute spherical glass inside, and is reflected almost in the incident direction as the light paths 21 and 22, and the mask 14 is observed again. The light is focused substantially on the spot and further advances into the objective lens 11, so that the light-shielding pattern 13 can be clearly seen in black in a bright background and the in-focus position of the microscope becomes clear to the observer.

発明の効果 以上のように本発明によれば、低反射率マスクの観察に
おいて、下方よりの透過光照明が行なえない場合に、落
射照明顕微鏡を用いて、被観察マスクの下方に、微小な
球状ガラスを平面に密に並べたもの等より成る光をほぼ
入射方向に反射する反射板を置き、かつ反射板を微小な
球状ガラスを平面に密に並べて固定したものとすること
により、低反射率の遮光パターンをコントラストと分解
能が良く観察することができ、その実用的効果は大なる
ものがある。
As described above, according to the present invention, in observation of a low-reflectance mask, when transmitted light illumination from below cannot be performed, an epi-illumination microscope is used, and a small spherical surface is formed below the observed mask. Low reflectivity by placing a reflector consisting of glass closely arranged on a flat surface in the direction of incidence and fixing the minute spherical glass densely on a flat surface. The light-shielding pattern can be observed with good contrast and resolution, and its practical effect is great.

【図面の簡単な説明】[Brief description of drawings]

第1図は従来のマスクの下方に何も置かない観察状態を
示す模式図、第2図は従来のマスクの下方に乱反射板を
置いた観察状態を示す模式図、第3図は従来のマスクの
下方に平面反射鏡を置いた観察状態を示す模式図、第4
図は本発明の一実施例のマスク観察装置を示す模式図で
ある。 11……対物レンズ、13……遮光パターン、14……マス
ク、16……微小球状ガラス、19,20……落射照明光の経
路。
FIG. 1 is a schematic diagram showing an observation state in which nothing is placed below a conventional mask, FIG. 2 is a schematic diagram showing an observation state in which a diffuse reflection plate is placed below a conventional mask, and FIG. 3 is a conventional mask. Schematic diagram showing an observation state in which a plane reflecting mirror is placed below
FIG. 1 is a schematic diagram showing a mask observation device according to an embodiment of the present invention. 11 …… Objective lens, 13 …… Shading pattern, 14 …… Mask, 16 …… Spherical glass, 19,20 …… Path of incident illumination light.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】光を遮光する個所と透過する個所を有する
被観察マスクに対し、その一方側に置いた対物レンズを
通して対象物を照明する落射照明顕微鏡と、前記マスク
の反対側に配置され落射照明光をほぼ入射方向に反射す
る反射板とより構成され、前記反射板は、微小な球状ガ
ラスを平面に密に並べて固定したものより成るマスク観
察装置。
1. An epi-illumination microscope for illuminating an object through an objective lens placed on one side of an observed mask having a portion for blocking light and a portion for transmitting light, and an epi-illumination arranged on the opposite side of the mask. A mask observing device comprising a reflecting plate that reflects illumination light substantially in the incident direction, and the reflecting plate is formed by closely arranging and fixing minute spherical glasses on a flat surface.
JP2105984A 1984-02-07 1984-02-07 Mask observation device Expired - Lifetime JPH0774859B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2105984A JPH0774859B2 (en) 1984-02-07 1984-02-07 Mask observation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2105984A JPH0774859B2 (en) 1984-02-07 1984-02-07 Mask observation device

Publications (2)

Publication Number Publication Date
JPS60164715A JPS60164715A (en) 1985-08-27
JPH0774859B2 true JPH0774859B2 (en) 1995-08-09

Family

ID=12044325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2105984A Expired - Lifetime JPH0774859B2 (en) 1984-02-07 1984-02-07 Mask observation device

Country Status (1)

Country Link
JP (1) JPH0774859B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2848682B1 (en) * 2002-12-13 2005-02-18 Commissariat Energie Atomique LIGHTING OPTICAL MICROSCOPE MODIFIABLE STRUCTURE
JP4487042B2 (en) * 2003-12-16 2010-06-23 レーザーテック株式会社 Optical apparatus, inspection apparatus, and inspection method
JP7037277B2 (en) * 2017-03-01 2022-03-16 オリンパス株式会社 Observation device
US11299701B2 (en) 2019-03-19 2022-04-12 Olympus Corporation Culture-medium-monitoring apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5237358B2 (en) * 1971-11-29 1977-09-21
DE3204686A1 (en) * 1982-02-11 1983-08-18 Fa. Carl Zeiss, 7920 Heidenheim OPTICAL SYSTEM FOR TRANSMITTED MICROSCOPY IN RESIDUAL ILLUMINATION

Also Published As

Publication number Publication date
JPS60164715A (en) 1985-08-27

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