JPH077657B2 - Ion implanter - Google Patents
Ion implanterInfo
- Publication number
- JPH077657B2 JPH077657B2 JP59228589A JP22858984A JPH077657B2 JP H077657 B2 JPH077657 B2 JP H077657B2 JP 59228589 A JP59228589 A JP 59228589A JP 22858984 A JP22858984 A JP 22858984A JP H077657 B2 JPH077657 B2 JP H077657B2
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- triangular wave
- scanning
- waveform
- wave voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005468 ion implantation Methods 0.000 claims description 25
- 238000012544 monitoring process Methods 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、走査電圧波形のひずみを監視するようにし
た静電走査方式のイオン注入装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic scanning ion implantation system adapted to monitor distortion of a scanning voltage waveform.
第３図は、従来のイオン注入装置の一例を示すブロック
図である。イオン源１から発生されたイオンビーム15
は、分析マグネット２によって質量分析されて加速管３
に入る。イオンビーム15はこの加速管３によって所望の
エネルギーにまで加速される。ビームライン上には、タ
ーゲットとしてのウエハ７でのビーム形状を整形するた
めに集束系４が設置されている。この集束系４は、集束
電源８によりイオンビーム15を集束させることができ
る。その後垂直走査電極５及び水平走査電極６により、
イオンビーム15をそれぞれ垂直方向及び水平方向に走査
し、ウエハ７へのイオン注入の均一性を確保する。この
ため、垂直走査電極５及び水平走査電極６には、それぞ
れ垂直走査電源９及び水平走査電源10から三角波の走査
電圧が印加されている。尚、図中符号13はしゃへい板で
あり、符号14はサプレッサーリングである。FIG. 3 is a block diagram showing an example of a conventional ion implanter. Ion beam 15 generated from ion source 1
Is mass-analyzed by the analysis magnet 2 and the acceleration tube 3
to go into. The ion beam 15 is accelerated to a desired energy by the acceleration tube 3. A focusing system 4 is installed on the beam line to shape the beam shape of the wafer 7 as a target. The focusing system 4 can focus the ion beam 15 by a focusing power source 8. After that, by the vertical scanning electrode 5 and the horizontal scanning electrode 6,
The ion beam 15 is scanned in the vertical direction and the horizontal direction, respectively, to ensure the uniformity of ion implantation into the wafer 7. Therefore, the vertical scanning power source 9 and the horizontal scanning power source 10 apply a triangular-wave scanning voltage to the vertical scanning electrodes 5 and the horizontal scanning electrodes 6, respectively. In the figure, reference numeral 13 is a shield plate, and reference numeral 14 is a suppressor ring.
上述のようなイオン注入装置において、走査電源９、10
の出力波形が所定の三角波からずれた場合には、ウエハ
７上でのイオンビーム15の走査速度が変化し、イオン注
入の均一性に悪影響を与えることになる。例えば走査電
極５、６に印加される三角波が第４図の点線のようにひ
ずんだ場合には、ウエハ７の外周部でのイオンビーム15
の走査速度が遅くなり、第５図に示すようにイオンの注
入量はウエハ７の中心領域よりも外周部の方が多くな
る。従ってこのような状況でイオン注入を継続すると、
注入量が不均一な不良品が続出する。In the ion implanter as described above, the scanning power supplies 9, 10
If the output waveform of 1 is deviated from a predetermined triangular wave, the scanning speed of the ion beam 15 on the wafer 7 changes, which adversely affects the uniformity of ion implantation. For example, when the triangular wave applied to the scanning electrodes 5 and 6 is distorted as shown by the dotted line in FIG.
Scan speed becomes slower, and as shown in FIG. 5, the ion implantation amount becomes larger in the outer peripheral portion than in the central region of the wafer 7. Therefore, if ion implantation is continued in this situation,
Defective products with a non-uniform injection volume appear one after another.
尚、上述のように三角波がひずむ原因としては、例え
ば、ビームが拡がり過ぎて走査電極に当たり、これによ
って走査電源に電流が流れて負荷変動を生じ、その結果
波形がひずむ場合や、ビームのサラインメントがずれて
ビームが構造物に当たり、そこから二次電子が出てこれ
が走査電極に吸収されて走査電源に電流が流れ、その結
果上記と同様に波形がひずむ場合等がある。As a cause of the distortion of the triangular wave as described above, for example, when the beam spreads too much and hits the scanning electrode, a current flows through the scanning power supply to cause load fluctuation, and as a result, the waveform is distorted or the beam alignment There is a case in which the beam hits the structure due to the deviation, secondary electrons are emitted from the structure, are absorbed by the scanning electrodes, and a current flows through the scanning power source, and as a result, the waveform is distorted as in the above case.
従ってこの発明は、イオン注入中の走査波形のひずみを
監視して、それが所定値から外れた時にイオン注入を禁
止することができるイオン注入装置を提供することを主
たる目的とする。Therefore, it is a main object of the present invention to provide an ion implantation apparatus capable of monitoring the distortion of a scanning waveform during ion implantation and inhibiting the ion implantation when it is out of a predetermined value.
この発明のイオン注入装置は、イオン注入中に走査電極
に現実に印加されている三角波電圧の波高値を求め、か
つ同三角波電圧のフーリエ変換を行ってその実効値を求
め、更にこの波高値および実効値を用いて同三角波電圧
の波高率を求める手段と、走査電極に印加されるべき正
常な三角波電圧の波高率を発生する手段と、両手段から
の波高率を比較して、その差が所定値から外れた時にイ
オン注入を禁止する信号を出力する比較手段とを含む波
形監視手段を備えることを特徴とする。The ion implantation apparatus of the present invention obtains the peak value of the triangular wave voltage that is actually applied to the scanning electrode during ion implantation, and performs the Fourier transform of the triangular wave voltage to obtain its effective value. The crest factor of the triangular wave voltage is calculated by using the effective value, the crest factor of the normal triangular wave voltage to be applied to the scanning electrode is generated, and the crest factors from both means are compared. It is characterized by comprising a waveform monitoring means including a comparing means for outputting a signal for prohibiting ion implantation when the value deviates from a predetermined value.
波形監視手段は、イオン注入中に走査電極に印加されて
いる三角波電圧の波高率が所定値から外れた時にイオン
注入を禁止する信号を出力する。従ってこの信号を用い
れば、走査波形の異常時にイオン注入を禁止することが
できる。The waveform monitoring means outputs a signal for prohibiting ion implantation when the crest factor of the triangular wave voltage applied to the scan electrode during ion implantation deviates from a predetermined value. Therefore, by using this signal, the ion implantation can be prohibited when the scanning waveform is abnormal.
第１図は、この発明の一実施例を示すブロック図であ
る。この図において、第３図に示した従来例の符号と同
一符号は同等部分を示す。この実施例では、波形監視手
段として垂直波形モニタ11及び水平波形モニタ12が設け
られており、これらはそれぞれ、イオン注入中に垂直走
査電極５及び水平走査電極６に印加されている三角波電
圧の波高率を検出し、当該波高率が所定値から外れた時
にイオン注入を禁止する信号S1及びS2をそれぞれ出力す
る。FIG. 1 is a block diagram showing an embodiment of the present invention. In this figure, the same reference numerals as those of the conventional example shown in FIG. 3 indicate the same parts. In this embodiment, a vertical waveform monitor 11 and a horizontal waveform monitor 12 are provided as waveform monitoring means, and these are respectively the wave heights of the triangular wave voltage applied to the vertical scanning electrode 5 and the horizontal scanning electrode 6 during ion implantation. When the crest factor deviates from a predetermined value, signals S1 and S2 that prohibit ion implantation are output.
第２図は、第１図の垂直波形モニタ11の一例を示すブロ
ック図である。垂直波形モニタ11は、垂直走査電極５に
接続された減衰器111と、それに接続された高速フーリ
エ変換器112及び波高値検出器113と、それらに接続され
た演算回路114と、演算回路114及び基準値発生回路116
に接続された比較器115とを備えている。FIG. 2 is a block diagram showing an example of the vertical waveform monitor 11 of FIG. The vertical waveform monitor 11 includes an attenuator 111 connected to the vertical scanning electrode 5, a fast Fourier transformer 112 and a peak value detector 113 connected to the attenuator 111, an arithmetic circuit 114 connected to them, an arithmetic circuit 114, and Reference value generation circuit 116
And a comparator 115 connected to.
減衰器111は、垂直走査電極５に印加されている高電圧
の走査電圧を適当な値に減衰させる。波高器検出器113
は、入力された三角波電圧の波高値Vpを検出して演算回
路114に与える。高速フーリエ変換器112は、入力された
三角波電圧の実効値Ｙを求めて演算回路114に与える。
この場合、実効値Ｙは次のようにして求める。一般に、
交流ｙの実効値Ｙは次式で表される。The attenuator 111 attenuates the high voltage scanning voltage applied to the vertical scanning electrode 5 to an appropriate value. Wave height detector 113
Detects the peak value Vp of the input triangular wave voltage and supplies it to the arithmetic circuit 114. The fast Fourier transformer 112 obtains the effective value Y of the input triangular wave voltage and supplies it to the arithmetic circuit 114.
In this case, the effective value Y is obtained as follows. In general,
The effective value Y of the alternating current y is represented by the following equation.
ここでＴは交流ｙの周期である。交流ｙが三角波の場
合、フーリエ展開により、 （１）式の√の中身は、 と表される。ここで、A0は直流項、A1は基本波の実効
値、A2、A3・・・は第２調波、第３調波・・・の実効値
である。従って、三角波の実効値Ｙは次式で表され、こ
の実効値Ｙが高速フーリエ変換器112で求められる。 Here, T is the cycle of the alternating current y. When the alternating current y is a triangular wave, the contents of √ in Eq. Is expressed as Here, A 0 is the DC term, A 1 is the effective value of the fundamental wave, A 2 , A 3, ... Are the effective values of the second harmonic, the third harmonic ,. Therefore, the effective value Y of the triangular wave is expressed by the following equation, and this effective value Y is obtained by the fast Fourier transformer 112.
一方演算回路114は、入力された波高値Vp及び実効値Ｙ
に基づいて、次式で表される波効率CFを演算する。 On the other hand, the arithmetic circuit 114 receives the input peak value Vp and effective value Y.
Based on, the wave efficiency CF expressed by the following equation is calculated.
CF＝Vp/Y …（４） ただしこの波高率CFは交流波形により一義的に定まって
おり、例えばひずみのない正常な三角波の場合は1.732
であり、三角波がひずむとこの値からずれてくる。従っ
て、この波高率CFは走査波形である三角波のひずみを表
す量となる。基準値発生回路116は、走査電極に印加さ
れるべき正常な三角波の波高率（例えば1.732）を基準
値RFとして出力する。比較器115は、例えばウィンドウ
形コンパレータを備えており、演算回路114からの波高
率CFと、基準値発生回路からの基準値RFとを比較し、両
者の差が所定値から外れた時に信号S1を出力する。この
信号S1を用いれば走査波形の異常時にイオン注入を禁止
することができこれによって不良品が続出することが防
止される。CF = Vp / Y (4) However, this crest factor CF is uniquely determined by the AC waveform. For example, in the case of a normal triangular wave without distortion, 1.732
And when the triangular wave is distorted, it deviates from this value. Therefore, this crest factor CF is an amount representing the distortion of the triangular wave which is the scanning waveform. The reference value generation circuit 116 outputs the crest factor (eg, 1.732) of a normal triangular wave to be applied to the scan electrodes as the reference value RF. The comparator 115 includes, for example, a window type comparator, compares the crest factor CF from the arithmetic circuit 114 with the reference value RF from the reference value generation circuit, and when the difference between the two deviates from a predetermined value, the signal S1 is output. Is output. If this signal S1 is used, ion implantation can be prohibited when the scanning waveform is abnormal, and this prevents defective products from continuing.
水平波形モニタ12も上述した垂直波形モニタ11と同様で
あるので、ここでは説明を省略する。尚、第１図のよう
に垂直波形モニタ11と水平波形モニタ12の両方を備えて
いれば走査波形の監視は完全となる。The horizontal waveform monitor 12 is also similar to the vertical waveform monitor 11 described above, and therefore the description thereof is omitted here. If both the vertical waveform monitor 11 and the horizontal waveform monitor 12 are provided as shown in FIG. 1, the monitoring of the scanning waveform is complete.
以上説明したようにこの発明によれば、イオン注入中の
走査波形のひずみを波高率を用いて監視して、それが所
定値から外れた時にイオン注入を禁止することができ
る。これにより、イオン注入量が不均一な不良ウエハが
続出することが防止される。As described above, according to the present invention, the distortion of the scanning waveform during the ion implantation can be monitored using the crest factor, and the ion implantation can be prohibited when it is out of the predetermined value. As a result, continuous production of defective wafers with non-uniform ion implantation amounts is prevented.
しかも走査波形のひずみを、三角波電圧のフーリエ変換
を行って求めた波高率を用いて監視するようにしている
ので、比較的簡単な回路構成で、三角波電圧のあらゆる
周波数成分を監視することができ、信頼性が高い。Moreover, since the distortion of the scanning waveform is monitored using the crest factor obtained by performing the Fourier transform of the triangular wave voltage, it is possible to monitor all frequency components of the triangular wave voltage with a relatively simple circuit configuration. , Reliable.
第１図は、この発明の一実施例を示すブロック図であ
る。第２図は、第１図の垂直波形モニタの一例を示すブ
ロック図である。第３図は、従来のイオン注入装置の一
例を示すブロック図である。第４図は、走査電極に印加
される三角波の一例を示す図である。第５図は、ウエハ
へのイオン注入量を示す図である。 ５…垂直走査電極、６…水平走査電極、９…垂直走査電
源、10…水平走査電源、11…垂直波形モニタ、12…水平
波形モニタ、112…高速フーリエ変換器、113…波高値検
出器、114…演算回路、115…比較器、116…基準値発生
回路。FIG. 1 is a block diagram showing an embodiment of the present invention. FIG. 2 is a block diagram showing an example of the vertical waveform monitor of FIG. FIG. 3 is a block diagram showing an example of a conventional ion implanter. FIG. 4 is a diagram showing an example of a triangular wave applied to the scan electrodes. FIG. 5 is a diagram showing the ion implantation amount to the wafer. 5 ... vertical scanning electrode, 6 ... horizontal scanning electrode, 9 ... vertical scanning power source, 10 ... horizontal scanning power source, 11 ... vertical waveform monitor, 12 ... horizontal waveform monitor, 112 ... fast Fourier transformer, 113 ... peak value detector, 114 ... Arithmetic circuit, 115 ... Comparator, 116 ... Reference value generating circuit.
Claims (1)
イオン注入中に走査電極に現実に印加されている三角波
電圧の波高値を求め、かつ同三角波電圧のフーリエ変換
を行ってその実効値を求め、更にこの波高値および実効
値を用いて同三角波電圧の波高率を求める手段と、走査
電極に印加されるべき正常な三角波電圧の波高率を発生
する手段と、両手段からの波高率を比較して、その差が
所定値から外れた時にイオン注入を禁止する信号を出力
する比較手段とを含む波形監視手段を備えることを特徴
とするイオン注入装置。1. An electrostatic scanning type ion implantation apparatus comprising:
The peak value of the triangular wave voltage actually applied to the scanning electrode during ion implantation is obtained, and the effective value is obtained by performing the Fourier transform of the triangular wave voltage. Further, the peak value and the effective value are used to calculate the triangular wave voltage. The crest factor of the normal triangular wave voltage to be applied to the scanning electrode, and the crest factor from both means are compared, and when the difference is out of a predetermined value, ion implantation is performed. An ion implantation apparatus comprising: a waveform monitoring unit including a comparison unit that outputs a signal that prohibits
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59228589A JPH077657B2 (en) | 1984-10-29 | 1984-10-29 | Ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59228589A JPH077657B2 (en) | 1984-10-29 | 1984-10-29 | Ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61107647A JPS61107647A (en) | 1986-05-26 |
| JPH077657B2 true JPH077657B2 (en) | 1995-01-30 |
Family
ID=16878728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59228589A Expired - Lifetime JPH077657B2 (en) | 1984-10-29 | 1984-10-29 | Ion implanter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH077657B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4761559A (en) * | 1986-09-24 | 1988-08-02 | Eaton Corporation | Ion beam implantation display method and apparatus |
| JP4964413B2 (en) * | 2004-11-30 | 2012-06-27 | 株式会社Ｓｅｎ | Ion beam / charged particle beam irradiation system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59219845A (en) * | 1983-05-27 | 1984-12-11 | Nec Corp | Device for monitoring electrostatic ion-beam scanner |
-
1984
- 1984-10-29 JP JP59228589A patent/JPH077657B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61107647A (en) | 1986-05-26 |
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