JPH077745B2 - Photovoltaic device manufacturing equipment - Google Patents
Photovoltaic device manufacturing equipmentInfo
- Publication number
- JPH077745B2 JPH077745B2 JP59004071A JP407184A JPH077745B2 JP H077745 B2 JPH077745 B2 JP H077745B2 JP 59004071 A JP59004071 A JP 59004071A JP 407184 A JP407184 A JP 407184A JP H077745 B2 JPH077745 B2 JP H077745B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas
- semiconductor thin
- thin film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010409 thin film Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 32
- 230000001629 suppression Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 43
- 150000002500 ions Chemical class 0.000 description 31
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 244000287680 Garcinia dulcis Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 本発明はプラズマCVD法により製造する光起電力素子の
製造装置に関し、特に光起電力素子の光電変換効率を高
め得る光起電力素子の製造装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a photovoltaic device manufacturing apparatus manufactured by a plasma CVD method, and more particularly to a photovoltaic device manufacturing apparatus capable of increasing the photoelectric conversion efficiency of a photovoltaic element.
プラズマCVD法による光起電力素子の製造は、第１図に
示すように、対向させた一対の電極1,1′を収容した金
属製のチャンバー２内に半導体薄膜を生成させる所定の
ガスを送給管３を経て送給するとともに、電極1,1′間
には直流電源又は高周波電源４により高電圧を印加し
て、対向する電極1,1′間のガスをグロー放電させるこ
とによつて分解させて、電極１′上に載置した基板５の
表面に所定の半導体薄膜を生成させることにより、光起
電力素子が作られる。As shown in FIG. 1, a photovoltaic device is manufactured by the plasma CVD method. A predetermined gas for forming a semiconductor thin film is fed into a metal chamber 2 containing a pair of electrodes 1 and 1 'which face each other. By feeding the gas through the supply pipe 3 and applying a high voltage between the electrodes 1 and 1 ′ by a DC power source or a high frequency power source 4, the gas between the opposing electrodes 1 and 1 ′ is glow-discharged. A photovoltaic element is produced by disassembling and forming a predetermined semiconductor thin film on the surface of the substrate 5 mounted on the electrode 1 '.
ところで、太陽電池の如き光起電力素子は、一般に特性
の異なる複数の半導体薄膜を基板５の表面に積層させる
必要があり、基板５の表面に半導体薄膜を生成させる場
合には、個々の半導体薄膜毎にその半導体薄膜の特性を
発揮させるために適した純度の極めて高いガスをチヤン
バー２内に送給する。そして、このようなガスの送給は
第１図に示す如く、ガス送給管３にバルブV1乃至V4を介
して接続された種類の異なるガスを充填しているガスボ
ンベG1，G2，G3，G4から適宜のバルブV1乃至V4を選択的
に開くことにより行われる。しかして、いま仮りにバル
ブV1を開いてガスボンベG1のガスをチヤンバー２内に送
給してグロー放電をさせて基板５の表面に１層目の半導
体薄膜を生成させた場合には、その放電により分解され
たガスの残渣がチャンバー２の内壁に飛散して付着す
る。続いていま生成させた１層目の半導体薄膜の表面に
別の特性を有する２層目の半導体薄膜を生成させる場合
には、いままでチヤンバー２内に送給されていたガスを
止めて排気管６から一旦排出させチヤンバー２内を真空
状態にした後、再び別のバルブV2を開いてガスボンベG2
から新らたな極めて純度の高いガスをチヤンバー２内に
送給してグロー放電させて先に生成させた１層目の半導
体薄膜の表面に特性の異なる新らたな２層目の半導体薄
膜を生成させる。この場合、２層目を生成させるガスの
グロー放電によりガスが分解されて発生したプラスのイ
オンＮ（以下イオンという）が、接地されているチヤン
バー２の内壁との電位差（電界）により高速度で衝突し
て、１層目の半導体薄膜の生成時におけるグロー放電で
チヤンバー２の内壁に付着していた残渣に衝撃を与えて
残査を叩たき残渣の一部の成分をチヤンバー２内に浮遊
させることになり、２層目半導体薄膜を生成させるガス
の純度を著るしく低下させることになる。そのため２層
目に生成された半導体薄膜の特性の低下が余儀なくさ
れ、光起電力素子の光電変換効率の上昇を妨げることが
判明した。By the way, in a photovoltaic element such as a solar cell, it is generally necessary to stack a plurality of semiconductor thin films having different characteristics on the surface of the substrate 5. When a semiconductor thin film is formed on the surface of the substrate 5, individual semiconductor thin films are required. An extremely high-purity gas suitable for exhibiting the characteristics of the semiconductor thin film is fed into the chamber 2 every time. Then, as shown in FIG. 1, such gas supply is performed by gas cylinders G 1 and G 2 filled with different kinds of gas connected to the gas supply pipe 3 through valves V 1 to V 4. , G 3 , G 4 by selectively opening the appropriate valves V 1 to V 4 . Now, if the valve V 1 is opened and the gas in the gas cylinder G 1 is fed into the chamber 2 for glow discharge to generate the first semiconductor thin film on the surface of the substrate 5, The gas residue decomposed by the discharge scatters and adheres to the inner wall of the chamber 2. Subsequently, when a second-layer semiconductor thin film having different characteristics is formed on the surface of the first-layer semiconductor thin film thus generated, the gas that has been fed into the chamber 2 until now is stopped and the exhaust pipe After discharging from 6 once and making the inside of the chamber 2 into a vacuum state, another valve V 2 is opened again and the gas cylinder G 2
A new semiconductor thin film of the second layer having different characteristics is formed on the surface of the semiconductor thin film of the first layer which was previously generated by supplying a new gas of extremely high purity into the chamber 2 to cause glow discharge. Is generated. In this case, the positive ions N (hereinafter, referred to as ions) generated by the gas being decomposed by the glow discharge of the gas that generates the second layer are generated at a high speed due to the potential difference (electric field) from the inner wall of the chamber 2 that is grounded. Upon collision, the residue adhered to the inner wall of the chamber 2 is impacted by glow discharge during the formation of the semiconductor thin film of the first layer, and the residue is hit to cause a part of the residue to float in the chamber 2. As a result, the purity of the gas that forms the second-layer semiconductor thin film is significantly reduced. Therefore, it has been found that the characteristics of the semiconductor thin film formed in the second layer are unavoidably deteriorated, which hinders the increase of the photoelectric conversion efficiency of the photovoltaic element.
そこで、薄膜の生成工程数に応じてチャンバー数を設置
しなければならないために、高価な設備を必要とするだ
けでなく繁雑な作業が伴う。また、極めて特性の良い半
導体薄膜を安定して生成するために、薄膜の各生成工程
後にチャンバー内側壁に付着した残渣を頻繁に清掃する
作業が必要である。Therefore, since the number of chambers has to be set according to the number of thin film forming steps, not only expensive equipment is required but also complicated work is involved. Further, in order to stably form a semiconductor thin film having extremely good characteristics, it is necessary to frequently clean the residue attached to the inner wall of the chamber after each thin film forming step.
本発明は前述した問題を解決するために、チヤンバー内
に対向させて配設した電極と前記チヤンバーの内壁との
間にイオン抑制電極を設けることにより、ガスの分解に
より発生したイオンをチヤンバーの内壁に衝突させない
ようにして、常に極めて純度の高いガスで個々の半導体
薄膜を生成させることにより、光起電力素子の光電変換
効率を一段と高め得る光起電力素子の製造装置を提案す
るものである。In order to solve the above-mentioned problems, the present invention provides an ion suppression electrode between an electrode disposed opposite to each other in the chamber and an inner wall of the chamber, so that ions generated by decomposition of gas are generated in the inner wall of the chamber. The present invention proposes a photovoltaic device manufacturing apparatus capable of further increasing the photoelectric conversion efficiency of a photovoltaic device by constantly producing individual semiconductor thin films with a gas having an extremely high purity without causing collision with the photovoltaic device.
以下第２図を参照して本発明の光起電力素子の製造装置
を詳細に説明する。なお第２図には、第１図に示した光
起電力素子の製造装置と同一構成部分には同一符号を付
している。The manufacturing apparatus of the photovoltaic element of the present invention will be described in detail below with reference to FIG. In FIG. 2, the same components as those of the photovoltaic device manufacturing apparatus shown in FIG. 1 are designated by the same reference numerals.
第２図において、1,1′は対向させて接地された金属製
のチャンバー２内に配設された電極であり、これらの電
極1,1′は高周波電源４に接続されていて、電極１′は
接地されている。電極１′には基板５が載置されてい
る。チヤンバー２には、チヤンバー２内に連通するガス
送給管３と排気管６とが設けられている。更に、チヤン
バー２内には、対向させた電極1,1′間隙の側方であっ
て該電極1,1′とチャンバー２の内側壁2aとの間に位置
し、隙間を有するイオン抑制電極７が内側壁2aに沿って
配設されている。このイオン抑制電極７は、例えば所定
の直径からなるステンレス、銅、アルミニウム等の導電
体7aを所定のピツチで渦巻円筒状に巻回したものからな
つていて、その軸長寸法は対向させた電極1,1′間距離
より若干長い寸法で形成されている。また、このイオン
抑制電極７はイオン抑制用電源８の負電極に接続されて
おり、その正電極は接地されている。そしてこのイオン
抑制電極７は、イオン抑制用電源８により負電圧が印加
されるようになつていて、その負電圧の大きさはイオン
抑制用電源８で必要により適宜調節し得るようになつて
いる。なお通常は、イオン抑制電極の負電圧を０〜10ボ
ルト程度あるいは接地して０ボルトに設定する。前記ガ
ス送給管３には、バルブV1乃至V4を介して異なるガスが
充填されたガスボンベG1乃至G4が接続されていて、所定
のバルブV1乃至V4を開くことにより所定のガスG1乃至G4
がガス送給管３を通つてチヤンバー２内に送給できるよ
うになつており、これらにより光起電力素子の製造装置
が構成されている。In FIG. 2, 1,1 'are electrodes arranged in a metal chamber 2 made to face each other and grounded, and these electrodes 1,1' are connected to a high frequency power source 4 and ′ Is grounded. A substrate 5 is placed on the electrode 1 '. The chamber 2 is provided with a gas supply pipe 3 and an exhaust pipe 6 that communicate with the inside of the chamber 2. Further, in the chamber 2, the ion suppressing electrode 7 is located on the side of the gap between the electrodes 1 and 1 ′ facing each other and between the electrodes 1 and 1 ′ and the inner wall 2 a of the chamber 2 and having a gap. Are arranged along the inner wall 2a. The ion suppression electrode 7 is made of, for example, a conductor 7a made of stainless steel, copper, aluminum or the like having a predetermined diameter, which is wound in a spiral cylindrical shape with a predetermined pitch, and the axial lengths of the electrodes are opposed to each other. The size is slightly longer than the distance between 1,1 '. The ion suppression electrode 7 is connected to the negative electrode of the ion suppression power supply 8, and the positive electrode thereof is grounded. A negative voltage is applied to the ion suppressing electrode 7 by an ion suppressing power source 8, and the magnitude of the negative voltage can be appropriately adjusted by the ion suppressing power source 8 if necessary. . Normally, the negative voltage of the ion suppression electrode is set to about 0 to 10 V or 0 V by grounding. The gas feed tube 3, the gas cylinder G 1 to G 4 different gas via a valve V 1 to V 4 is filled is connected and a predetermined by opening a predetermined valve V 1 to V 4 Gas G 1 to G 4
Can be fed into the chamber 2 through the gas feed pipe 3, and these constitute a photovoltaic device manufacturing apparatus.
次にこのように構成した光起電力素子の製造装置による
光起電力素子の製造過程を説明する。先づ、チヤンバー
２内を真空状態にした後、イオン抑制電極７に所定の負
電圧を印加する。続いて、例えばバルブV1を開いてガス
ボンベG1のガスをチヤンバー２に送給する。その後、電
極1,1′間に高周波電源４より高電圧を印加して、対向
した電極1,1′間のガスをグロー放電させて分解し基板
５の表面に所定の半導体薄膜を生成させる。このとき、
ガスが分解された残渣はチヤンバー２の内側壁2aにも付
着する。一方、グロー放電により発生したイオンＮは、
接地されて零電圧である金属製のチャンバー２の内側壁
2aに向つて突進するが、内側壁2aの手前に配設されて負
電圧が印加されたイオン抑制電極の電界が影響して、イ
オンＮはイオン抑制電極７に引寄せられて大地に流れて
チヤンバー２の内側壁2aには到達しない。このようにし
て１層目の半導体薄膜を生成させた後は、バルブV1を閉
じてチヤンバー２内のガスを排出させた後、チヤンバー
２内を再び真空状態にする。その後、いま基板５に生成
させた１層目の半導体薄膜の表面に２層目の半導体薄膜
を生成させるための、例えばガスボンベG2の新らたなガ
スをバルブV2を開いてチヤンバー２内に送給し、前記同
様にグロー放電させて先に生成させた１層目の半導体薄
膜の表面に特性の異なる２層目の半導体薄膜を生成させ
る。この場合も前記したと同様に、ガスが分解されてそ
の残渣がチヤンバー２の内側壁2aに付着する。またイオ
ンＮが発生するが、イオン抑制電極７に引寄せられてチ
ヤンバー２の内側壁2aには到達しない。そのために内側
壁2aに付着している残渣には何ら衝撃が加わらず、内側
壁2aに付着したままの状態を保持する。したがつて、２
層目の半導体薄膜を生成させるガスには残渣及びこの残
渣に吸着されているガスあるいはこの残渣を分解して放
出されるガスが混入せず、極めて純度の高いガスによる
半導体薄膜が生成される。以下同様にして他のガスボン
ベG3，G4のガスを夫々チヤンバー２内に送給して３層目
及び４層目の半導体薄膜を生成して、特性の良い半導体
薄膜を順次積層した光起電力素子を製造することができ
る。このようにして夫々の半導体薄膜は、常に極めて純
度の高いガスにより生成されるため製造された光起電力
素子の光電変換効率は著るしく高いものとなる。Next, the manufacturing process of the photovoltaic element by the photovoltaic device manufacturing apparatus thus configured will be described. First, after the chamber 2 is evacuated, a predetermined negative voltage is applied to the ion suppression electrode 7. Then, for example, the valve V 1 is opened to feed the gas in the gas cylinder G 1 to the chamber 2. After that, a high voltage is applied from the high frequency power source 4 between the electrodes 1 and 1 ', the gas between the opposing electrodes 1 and 1'is glow-discharged and decomposed to form a predetermined semiconductor thin film on the surface of the substrate 5. At this time,
The gas decomposition residue also adheres to the inner wall 2a of the chamber 2. On the other hand, the ions N generated by the glow discharge are
Inner wall of metal chamber 2 grounded to zero voltage
Although it rushes toward 2a, the ions N are attracted to the ion suppression electrode 7 and flow to the ground due to the influence of the electric field of the ion suppression electrode, which is arranged in front of the inner wall 2a and to which a negative voltage is applied. The inner wall 2a of the chamber 2 is not reached. After the semiconductor thin film of the first layer is formed in this way, the valve V 1 is closed to discharge the gas in the chamber 2, and then the inside of the chamber 2 is evacuated again. Thereafter, for generating a semiconductor thin film of the second layer on the surface of the first layer of semiconductor thin film now is created on a substrate 5, for example, a new rata gas of the gas cylinder G 2 by opening the valve V 2 Chiyanba within 2 Then, the second layer of semiconductor thin film having different characteristics is formed on the surface of the first layer of semiconductor thin film previously formed by glow discharge in the same manner as described above. Also in this case, the gas is decomposed and the residue adheres to the inner side wall 2a of the chamber 2 in the same manner as described above. Although ions N are generated, they are attracted to the ion suppression electrode 7 and do not reach the inner side wall 2a of the chamber 2. Therefore, no impact is applied to the residue attached to the inner wall 2a, and the state of being attached to the inner wall 2a is maintained. Therefore, 2
The gas for forming the semiconductor thin film of the layer is not mixed with the residue, the gas adsorbed by the residue, or the gas released by decomposing the residue, and the semiconductor thin film is formed of an extremely high purity gas. In the same manner, the gases of the other gas cylinders G 3 and G 4 are respectively fed into the chamber 2 to generate the semiconductor thin films of the third layer and the fourth layer, and the semiconductor thin films having good characteristics are sequentially stacked. A power device can be manufactured. In this way, each semiconductor thin film is always produced by a gas having an extremely high purity, so that the photovoltaic conversion efficiency of the manufactured photovoltaic element is remarkably high.
なお、本実施例においてはイオン抑制電極７に、断面円
形の導体7aを渦巻円筒状に巻回したものを使用したが、
金網を円筒状に曲成したものを使用することもでき、ま
た導体を簾状、暖簾状にし曲成したものを使用すること
もでき、更には、金属細線を極めて小さいピツチで渦巻
円筒状とすることもできる。その場合には、金属細線を
巻付けるための所定の巻枠を必要とする。一方、イオン
抑制用電源８は高周波電源４と別電源としたが、高周波
電源４から負電圧を取り出してもよい。更にイオン抑制
電極を同心状で２電極として、その内側のイオン抑制電
極を零電圧、つまり接地し、外側のイオン抑制電極を負
電圧とすれば、チヤンバー２の内側壁2aへのイオンの到
達をより阻止することができる。なお、イオン抑制電極
に印加する電圧は負電圧とすればよく、特定の電圧値に
限定されるものではない。In addition, in the present embodiment, the ion suppression electrode 7 used is one in which the conductor 7a having a circular cross section is wound into a spiral cylindrical shape.
It is also possible to use a wire mesh bent into a cylindrical shape, or a bent wire with a conductor in the shape of a curtain or a curtain, and to use a metal thin wire with a very small pitch to form a spiral cylinder. You can also do it. In that case, a predetermined winding frame for winding the thin metal wire is required. On the other hand, the ion suppressing power source 8 is a power source different from the high frequency power source 4, but a negative voltage may be taken out from the high frequency power source 4. Further, if the ion suppression electrodes are concentrically formed of two electrodes, the inner ion suppression electrode is set to zero voltage, that is, grounded, and the outer ion suppression electrode is set to a negative voltage, the ions reach the inner wall 2a of the chamber 2. It can be blocked more. The voltage applied to the ion suppression electrode may be a negative voltage and is not limited to a specific voltage value.
以上説明したように、本発明による光起電力素子の製造
装置は、対向させた電極1,1′を収容した金属製のチャ
ンバー２と前記電極1,1′との間にイオン抑制電極７を
配設させたことにより、グロー放電によりガスが分解さ
れて発生するイオンＮをチヤンバー２の内側壁2aに到達
するのを効果的に抑制できる。そのため、イオンＮがチ
ヤンバー２の内側壁2aに付着している残渣に勢いよく衝
突して残渣の一部の成分を叩たき出して浮遊させること
が皆無となる。したがつて、チヤンバー２内は所定の半
導体薄膜を生成させるための極めて純度の高いガスのみ
が送給された状態に保持し得て、極めて特性の良い半導
体薄膜を安定して生成できる。特に、１つのチヤンバー
で順次異なるガスを送給して順次特性の良い半導体薄膜
を生成できるので、安価な設備で光電変換効率の高い光
起電力素子を安定的に製造することができる。また、半
導体薄膜の生成後に行う残渣を清掃する回数が大幅に低
減され、作業性がよくなる。等、産業上に寄与するとこ
ろ大である。As described above, in the photovoltaic device manufacturing apparatus according to the present invention, the ion suppressing electrode 7 is provided between the metal chamber 2 accommodating the opposed electrodes 1, 1'and the electrodes 1, 1 '. By disposing it, it is possible to effectively prevent the ions N generated by the decomposition of the gas by the glow discharge from reaching the inner side wall 2a of the chamber 2. Therefore, the ions N do not vigorously collide with the residue attached to the inner wall 2a of the chamber 2 to knock out a part of the components of the residue and float them. Therefore, the chamber 2 can be kept in a state in which only a gas of extremely high purity for forming a predetermined semiconductor thin film is fed, and a semiconductor thin film of extremely good characteristics can be stably formed. In particular, since one chamber can sequentially supply different gases to sequentially generate semiconductor thin films having good characteristics, a photovoltaic device with high photoelectric conversion efficiency can be stably manufactured with inexpensive equipment. In addition, the number of times the residue is cleaned after the formation of the semiconductor thin film is significantly reduced, and the workability is improved. Etc., it is a great place to contribute to the industry.
第１図は従来の光起電力素子の製造装置を示す説明図、
第２図は本発明に係る光起電力素子の製造装置を示す説
明図である。 1,1′…電極、２…チヤンバー、３…ガス送給管、４…
高周波電源、７…イオン抑制電極、８…イオン抑制用電
源。FIG. 1 is an explanatory view showing a conventional photovoltaic device manufacturing apparatus,
FIG. 2 is an explanatory view showing a photovoltaic device manufacturing apparatus according to the present invention. 1, 1 '... electrode, 2 ... chamber, 3 ... gas supply pipe, 4 ...
High frequency power source, 7 ... Ion suppressing electrode, 8 ... Ion suppressing power source.
Claims (1)
ー内に設け、所定のガスを前記電極間でグロー放電させ
て分解し、基板の表面に半導体薄膜を形成させるプラズ
マCVD（Chemical Vapor Deposition）法による光起電力
素子の製造装置において、 前記電極間隙の側方であって該電極と前記チャンバーの
内側壁との間に位置し、隙間を有するイオン抑制電極が
前記内側壁に沿って配設されると共に、前記チャンバー
に対し前記イオン抑制電極を負電圧とするイオン抑制用
電源を設けた光起電力素子の製造装置。1. A plasma CVD (Chemical Vapor Deposition) method in which a pair of opposed electrodes are provided in a metal chamber, and a predetermined gas is glow-discharged between the electrodes to decompose and form a semiconductor thin film on the surface of a substrate. ) Method for manufacturing a photovoltaic element, an ion suppression electrode that is located laterally of the electrode gap and between the electrode and the inner wall of the chamber is provided along the inner wall. An apparatus for manufacturing a photovoltaic element, which is provided with an ion suppression power supply that sets the ion suppression electrode to a negative voltage with respect to the chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59004071A JPH077745B2 (en) | 1984-01-11 | 1984-01-11 | Photovoltaic device manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59004071A JPH077745B2 (en) | 1984-01-11 | 1984-01-11 | Photovoltaic device manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60147114A JPS60147114A (en) | 1985-08-03 |
| JPH077745B2 true JPH077745B2 (en) | 1995-01-30 |
Family
ID=11574576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59004071A Expired - Lifetime JPH077745B2 (en) | 1984-01-11 | 1984-01-11 | Photovoltaic device manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH077745B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5698820A (en) * | 1980-01-09 | 1981-08-08 | Nec Corp | Preparation of amorphous semiconductor film |
| JPS58122038A (en) * | 1982-01-16 | 1983-07-20 | Seisan Gijutsu Shinko Kyokai | Forming device for thin film |
| JPS5953211B2 (en) * | 1982-05-27 | 1984-12-24 | 工業技術院長 | Thin film silicon production equipment |
-
1984
- 1984-01-11 JP JP59004071A patent/JPH077745B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60147114A (en) | 1985-08-03 |
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