JPH077763B2 - Ion beam processing method and apparatus - Google Patents
Ion beam processing method and apparatusInfo
- Publication number
- JPH077763B2 JPH077763B2 JP62077038A JP7703887A JPH077763B2 JP H077763 B2 JPH077763 B2 JP H077763B2 JP 62077038 A JP62077038 A JP 62077038A JP 7703887 A JP7703887 A JP 7703887A JP H077763 B2 JPH077763 B2 JP H077763B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- scanning
- scanning direction
- sample surface
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 42
- 238000003672 processing method Methods 0.000 title claims 2
- 239000002245 particle Substances 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000007664 blowing Methods 0.000 claims 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 201000009310 astigmatism Diseases 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はイオンビームを走査して照射しながら、試料表
面の微細加工を行うイオンビーム加工装置に関する。加
工の種類としては例えば半導体デバイスあるいは露光用
フォトマスク（Ｘ線マスクを含む）等に、配線または遮
光のための金属パターン膜を追加形成する場合（以下こ
の加工を単に膜付けという）や、不要配線または不要付
着パターンを除去する場合等に利用されるものである。Description: TECHNICAL FIELD The present invention relates to an ion beam processing apparatus that performs fine processing of a sample surface while scanning and irradiating an ion beam. As a type of processing, for example, when a metal pattern film for wiring or light shielding is additionally formed on a semiconductor device or a photomask for exposure (including an X-ray mask) (hereinafter, this processing is simply referred to as film formation) or unnecessary. It is used for removing wiring or unnecessary adhesion patterns.
本発明はイオンビームを走査しながら照射して試料表面
の加工例えば膜付けをするイオンビーム加工装置におい
て、イオンビーム走査方向を電気的に回転座標変換さ
せ、360゜任意方向に偏向走査可能とすることにより、
Ｘ−Ｙ座標軸方向のみならず斜め方向のイオンビーム局
所膜付を可能し360゜任意方向での加工手段を提供する
ものである。INDUSTRIAL APPLICABILITY The present invention is an ion beam processing apparatus for processing a sample surface by irradiating while scanning with an ion beam, for example, for forming a film, by electrically rotating coordinate conversion of the ion beam scanning direction and making it possible to deflect and scan in any direction of 360 ° By
It is possible to provide a local ion beam film not only in the X-Y coordinate axis direction but also in an oblique direction, and to provide a processing means in any 360 ° direction.
従来から液体金属イオン源（イオン材料としては例えば
ガリウムを用いる。）より発するイオンビームを集束レ
ンズ系でスポット状に集光した走査電極を用いてラスタ
スキャン照射し試料表面の加工例えば膜付けを行うイオ
ンビーム加工装置は知られていた。この場合イオンビー
ム走査方向はＸ−Ｙ座標軸方向のみであった。例えば第
２図で示すような保護膜に被覆された２本のIC配線201
を入れ替える場合、第４図に示すように保護膜を除去し
下層の配線を露出させる加工（以下穴あけという）301
を２回及び膜付け302を４回及び配線の切断（以下切断
という）303を２回加工した。Conventionally, an ion beam emitted from a liquid metal ion source (for example, gallium is used as an ionic material) is raster-scan-irradiated using a scanning electrode that is focused in a spot shape by a focusing lens system to perform processing, such as coating, on a sample surface. Ion beam processing equipment was known. In this case, the ion beam scanning direction was only the XY coordinate axis direction. For example, two IC wirings 201 covered with a protective film as shown in FIG.
When replacing, the process to remove the protective film and expose the underlying wiring as shown in FIG. 4 (hereinafter referred to as drilling) 301
Was processed twice, the film forming 302 was processed four times, and the wiring cutting (hereinafter referred to as cutting) 303 was processed twice.
前記に示されたように、従来はイオンビーム走査方向が
一定であったため、例えば膜付けを行う場合、形成され
る膜の形状がＸ−Ｙ座標軸方向のみと限定されている関
係上、１箇所の配線のために２回の膜付けを行なう場合
が数多く存在し、イオンビーム加工装置の稼動率を下げ
てしまうという問題点があった。As described above, since the ion beam scanning direction is constant in the related art, for example, when a film is attached, the shape of the film formed is limited to only the X-Y coordinate axis direction, so that there is only one position. There are many cases in which the film is applied twice for the wiring, and there is a problem that the operating rate of the ion beam processing apparatus is reduced.
本発明は前述した従来技術の問題点を解決することを目
的とする。その手段は、イオンビーム加工装置におい
て、イオンビーム走査信号発生経路中にＸ方向およびＹ
方向の走査信号を回転座標変換する走査方向回転信号発
生部で回転させ、試料を固定した状態で360゜任意方向
の加工を行なうものである。The present invention aims to solve the above-mentioned problems of the prior art. The means is, in the ion beam processing apparatus, the X direction and the Y direction in the ion beam scanning signal generation path.
It rotates in the scanning direction rotation signal generator that converts the scanning signal in the direction to the rotational coordinate, and performs processing in any direction of 360 ° with the sample fixed.
Ｘ−Ｙ座標上において（x,y）座標の角度θ回転移動後
の座標（ｘ′,y′）は次式で与えられる。The coordinates (x ', y') after the rotational movement of the angle (x, y) on the XY coordinates by the angle θ are given by the following equation.
ｘ′＝xcosθ−ysinθ ｙ′＝xsinθ＋ycosθ 前述の変換式を満足するようにＸ方向およびＹ方向の走
査信号の変換を行なうことにより、イオンビームは変換
式に従い偏向される。すなわちθを変化することで360
゜任意方向のイオンビーム走査が行われるのである。x ′ = x cos θ−y sin θ y ′ = x sin θ + y cos θ By performing the conversion of the scanning signals in the X direction and the Y direction so as to satisfy the above conversion formula, the ion beam is deflected according to the conversion formula. It That is, by changing θ 360
The ion beam scanning is performed in any direction.
以下第１図に従って本発明の好適な実施例を詳細に説明
する。A preferred embodiment of the present invention will be described in detail below with reference to FIG.
１はイオンビームを発するイオン源である。例えばガリ
ウム液体金属イオン源が用いられる。２はコンデンサレ
ンズであってイオンビーム発生用電源および制御部16及
びイオン源から発生制御されたイオンビームを集光す
る。３は上部偏向板であって電圧印加によりコンデンサ
レンズ２を通過したイオンビームを大きく屈折させる。
必要に応じイオンビームのブランキング等を行なうため
である。４はイオンビーム経路に対して直交する方向に
移動できる可動絞りである。５は非点補正レンズであっ
て、可動絞り４を通過したイオンビームの非点補正を行
ない真円イオンビームスポットを得るためのレンズであ
る。６は対物レンズであって非点補正されたイオンビー
ムのスポットを試料９表面上に結像するためのものであ
る。７は走査電極であってＸ及びY2組の電極よりなる。
イオンビームスポットを試料上でラスタスキャンし例え
ば半導体デバイスの補修加工を行なう。８はガス銃であ
って例えばヘキサカルボニル金属蒸気を半導体デバイス
の膜付け箇所に吹きつけるものである。同時に膜付け箇
所にイオンビームを走査しながら照射しヘキサカルボニ
ル金属蒸気を金属化し膜付けを行なう。前記試料９表面
から放出される二次荷電粒子は二次荷電粒子検出器10に
よって検出され、信号増幅処理部11により増幅および処
理され輝度信号となり、走査制御部13からの走査信号と
共にディスプレイ12に入力されて二次荷電粒子像が表示
される。この二次荷電粒子像によって試料９上の金属パ
ターン膜を形成すべき位置を探し出し、走査方向回転信
号発生部15で前記二次荷電粒子像を回転移動させ、走査
範囲設定部14で前記金属パターン膜を形成すべき領域を
設定し膜付加工を行なう。例えば前記第２図のIC配線20
1の入れ替えを本発明の方法で実現した場合、第３図に
示すように、穴あけ301を２回および膜付け302を３回お
よび切断303を２回とすることで所望の加工が終了す
る。従って本例の場合、本発明により膜付け回数が１回
減ずることになる。An ion source 1 emits an ion beam. For example, a gallium liquid metal ion source is used. Reference numeral 2 denotes a condenser lens which collects an ion beam whose generation is controlled by the power source for ion beam generation, the control unit 16 and the ion source. Reference numeral 3 denotes an upper deflection plate that largely refracts the ion beam that has passed through the condenser lens 2 by applying a voltage.
This is because blanking of the ion beam is performed as necessary. A movable diaphragm 4 is movable in a direction orthogonal to the ion beam path. Reference numeral 5 denotes an astigmatism correction lens, which is a lens for performing astigmatism correction on the ion beam passing through the movable diaphragm 4 to obtain a perfect circular ion beam spot. An objective lens 6 is for forming an astigmatism-corrected spot of the ion beam on the surface of the sample 9. Reference numeral 7 denotes a scanning electrode, which is composed of X and Y2 sets of electrodes.
The ion beam spot is raster-scanned on the sample to perform, for example, repair processing of a semiconductor device. Reference numeral 8 denotes a gas gun which blows, for example, hexacarbonyl metal vapor onto the film-attached portion of the semiconductor device. At the same time, a film is deposited by irradiating the film deposition site with an ion beam while metalizing the hexacarbonyl metal vapor. The secondary charged particles emitted from the surface of the sample 9 are detected by the secondary charged particle detector 10, amplified and processed by the signal amplification processing unit 11 to become a luminance signal, and displayed on the display 12 together with the scanning signal from the scanning control unit 13. The image is input and the secondary charged particle image is displayed. A position where a metal pattern film on the sample 9 is to be formed is found from this secondary charged particle image, the secondary charged particle image is rotationally moved by the scanning direction rotation signal generation unit 15, and the metal pattern is scanned by the scanning range setting unit 14. The region where the film is to be formed is set and the film forming process is performed. For example, the IC wiring 20 of FIG.
When the replacement of 1 is realized by the method of the present invention, as shown in FIG. 3, the desired processing is completed by making the hole 301 twice, the film forming 302 three times, and the cutting 303 twice. Therefore, in the case of this example, the number of times of film formation is reduced by one by the present invention.
以上述べたように本発明によれば、イオンビーム走査信
号発生経路中に走査方向回転信号発生部を介在させ、二
次荷電粒子像を任意角度で回転移動することで、斜め方
向など360゜任意方向のイオンビーム局所膜付を可能と
した。その結果加工箇所数を低減することができるよう
になり加工スピードを向上させる効果がある。As described above, according to the present invention, by interposing the scanning direction rotation signal generation unit in the ion beam scanning signal generation path and rotating and moving the secondary charged particle image at an arbitrary angle, it is possible to rotate the secondary charged particle image at an arbitrary 360 ° such as an oblique direction. It is possible to attach a local ion beam film. As a result, the number of processing points can be reduced, which has the effect of improving the processing speed.
第１図は本発明の実施例を示す装置構成図、第２図は本
発明の方法を実現するためのIC配線例の平面図、第３図
は本発明を利用した前記第２図の配線入れ替え加工実施
例の平面図、第４図は前記第２図の配線入れ替えの従来
の方法による実施例の平面図である。 １……イオン源 ２……コンデンサレンズ ３……上部偏向板 ４……可動絞り ５……非点補正レンズ ６……対物レンズ ７……走査電極 ８……ガス銃 ９……試料 10……二次荷電粒子検出器 11……信号増幅処理部 12……ディスプレイ 13……走査制御部 14……走査範囲設定部 15……走査方向回転信号発生部 16……イオンビーム発生用電源及び制御部 201……IC配線 301……穴あけ箇所 302……膜付け箇所 303……切断箇所1 is an apparatus configuration diagram showing an embodiment of the present invention, FIG. 2 is a plan view of an example of IC wiring for realizing the method of the present invention, and FIG. 3 is the wiring of FIG. 2 utilizing the present invention. FIG. 4 is a plan view of an example of the replacement process, and FIG. 4 is a plan view of the example of the conventional method of replacing the wiring shown in FIG. 1 ... Ion source 2 ... Condenser lens 3 ... Upper deflection plate 4 ... Movable diaphragm 5 ... Astigmatism correction lens 6 ... Objective lens 7 ... Scan electrode 8 ... Gas gun 9 ... Sample 10 ... Secondary charged particle detector 11 …… Signal amplification processing unit 12 …… Display 13 …… Scanning control unit 14 …… Scanning range setting unit 15 …… Scanning direction rotation signal generation unit 16 …… Ion beam generation power supply and control unit 201 …… IC wiring 301 …… Drilling point 302 …… Film attachment point 303 …… Cut point
Claims (2)
ンズ系で集光し、前記集光されたイオンビームを走査電
極により試料表面の所定領域にて走査させて照射し、前
記イオンビーム照射により発生する二次荷電粒子を二次
荷電粒子検出器にて検出し、前記二次荷電粒子検出器の
信号に基づいて前記試料表面の画像をディスプレイに表
示し、前記ディスプレイに表示された画像により決定さ
れた加工領域の形状に基づいて走査方向回転信号発生器
により前記走査電極による前記イオンビームの走査方向
を回転させることにより前記画像を回転し、前記走査方
向回転信号発生器により回転された画像に基づいて前記
集光されたイオンビームの加工領域である走査領域を設
定し、前記加工領域に前記集光されたイオンビームを前
記走査方向回転信号発生器により回転された走査方向に
て走査させながら照射して試料表面を加工することを特
徴とするイオンビーム加工方法。1. An ion beam emitted from an ion source is focused by a focusing lens system, and the focused ion beam is scanned by a scanning electrode in a predetermined area on the surface of a sample and irradiated, and the ion beam is generated. The secondary charged particles to be detected by the secondary charged particle detector, the image of the sample surface is displayed on the display based on the signal of the secondary charged particle detector, and is determined by the image displayed on the display. The image is rotated by rotating the scanning direction of the ion beam by the scanning electrode by the scanning direction rotation signal generator based on the shape of the processed region, and based on the image rotated by the scanning direction rotation signal generator. A scanning region, which is a processing region of the focused ion beam, is set, and the focused ion beam is moved to the scanning region by the rotation signal of the scanning direction. Ion beam processing method characterized by processing the sample surface is irradiated while scanning in the rotated scanning direction by generator.
ンズで集光し走査電極で走査させながら試料表面に照射
する手段と、原料ガスを前記試料表面に吹きつけるガス
銃と、前記イオンビーム照射により前記試料表面から発
生する二次荷電粒子を検出する二次荷電粒子検出器と、
前記二次荷電粒子検出器の信号に基づいて前記試料表面
の画像を表示するディスプレイと、前記ディスプレイに
表示された画像により前記走査電極により前記イオンビ
ームの走査方向を回転させる走査方向回転信号発生器
と、前記走査方向回転信号発生器により回転された前記
ディスプレイの画像に基づいて前記イオンビームの前記
試料表面の走査領域を設定する走査範囲設定部よりなる
ことを特徴とするイオンビーム加工装置。2. A means for irradiating an ion beam emitted from an ion source with a focusing lens and irradiating the sample surface while scanning with a scanning electrode, a gas gun for blowing a source gas onto the sample surface, and the ion beam irradiation. A secondary charged particle detector for detecting secondary charged particles generated from the sample surface,
A display for displaying an image of the sample surface based on a signal from the secondary charged particle detector, and a scanning direction rotation signal generator for rotating the scanning direction of the ion beam by the scanning electrodes according to the image displayed on the display. And an ion beam processing apparatus comprising: a scanning range setting unit that sets a scanning region of the sample surface of the ion beam based on an image on the display rotated by the scanning direction rotation signal generator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62077038A JPH077763B2 (en) | 1987-03-30 | 1987-03-30 | Ion beam processing method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62077038A JPH077763B2 (en) | 1987-03-30 | 1987-03-30 | Ion beam processing method and apparatus |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7335351A Division JP2829302B2 (en) | 1995-12-22 | 1995-12-22 | Ion beam processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63241953A JPS63241953A (en) | 1988-10-07 |
| JPH077763B2 true JPH077763B2 (en) | 1995-01-30 |
Family
ID=13622596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62077038A Expired - Lifetime JPH077763B2 (en) | 1987-03-30 | 1987-03-30 | Ion beam processing method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH077763B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2829302B2 (en) * | 1995-12-22 | 1998-11-25 | セイコーインスツルメンツ株式会社 | Ion beam processing equipment |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60245227A (en) * | 1984-05-21 | 1985-12-05 | Seiko Instr & Electronics Ltd | Pattern film forming method |
| JPS6188440A (en) * | 1984-10-05 | 1986-05-06 | Hitachi Ltd | Sample image display device |
| JPS61176042A (en) * | 1985-01-29 | 1986-08-07 | Mitsubishi Electric Corp | Method and equipment for monitoring cathode of electron beam processing device |
| JPH0715905B2 (en) * | 1985-04-23 | 1995-02-22 | セイコー電子工業株式会社 | Ion beam processing equipment |
| JPS6242157A (en) * | 1985-08-20 | 1987-02-24 | Seiko Instr & Electronics Ltd | Ion beam irradiating device |
-
1987
- 1987-03-30 JP JP62077038A patent/JPH077763B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63241953A (en) | 1988-10-07 |
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