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JPH0778478B2 - Method for measuring free chlorine in sample water - Google Patents
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JPH0778478B2 - Method for measuring free chlorine in sample water - Google Patents

Method for measuring free chlorine in sample water

Info

Publication number
JPH0778478B2
JPH0778478B2 JP6958889A JP6958889A JPH0778478B2 JP H0778478 B2 JPH0778478 B2 JP H0778478B2 JP 6958889 A JP6958889 A JP 6958889A JP 6958889 A JP6958889 A JP 6958889A JP H0778478 B2 JPH0778478 B2 JP H0778478B2
Authority
JP
Japan
Prior art keywords
sample water
free chlorine
chlorine
water
carrier gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP6958889A
Other languages
Japanese (ja)
Other versions
JPH02248851A (en
Inventor
聡 西方
寛 星川
勝 河野
義 高田
才 酒井
豊明 青木
幸男 濱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
New Cosmos Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
New Cosmos Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, New Cosmos Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP6958889A priority Critical patent/JPH0778478B2/en
Publication of JPH02248851A publication Critical patent/JPH02248851A/en
Publication of JPH0778478B2 publication Critical patent/JPH0778478B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Sampling And Sample Adjustment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は上下水道水,工業用水,河川水等に存在する
遊離塩素の測定方法に係り、特に結合塩素の影響を受け
ない試料水中の遊離塩素の測定方法に関する。
TECHNICAL FIELD The present invention relates to a method for measuring free chlorine existing in water and sewage water, industrial water, river water, etc., and in particular, free chlorine in sample water not affected by bound chlorine. It relates to a method for measuring chlorine.

〔従来の技術〕[Conventional technology]

水の消毒には一般に塩素(Cl2)あるいは次亜塩素酸ナ
トリウム(NaClO)が用いられる。塩素あるいは次亜塩
素酸ナトリウムを水中に注入した場合、次亜塩素酸(HC
lO)および次亜塩素酸イオン(ClO-)を生じる。
Generally, chlorine (Cl 2 ) or sodium hypochlorite (NaClO) is used to disinfect water. When chlorine or sodium hypochlorite is injected into water, hypochlorous acid (HC
lO) and hypochlorite ions (ClO -) produce.

塩素の場合は式(1),(2)の反応を行う。In the case of chlorine, the reactions of formulas (1) and (2) are performed.

Cl2+H2OHClO+HCl ……(1) HClO+ClO-+H+ ……(2) 次亜塩素酸ナトリウムの場合は式(3),(4)の反応
を行う。
Cl 2 + H 2 OHClO + HCl (1) HClO + ClO + H + (2) In the case of sodium hypochlorite, the reactions of formulas (3) and (4) are performed.

NaClO+H2OHClO+NaOH ……(3) HClOClO-+H+ ……(4) ここで塩素,次亜塩素酸および次亜塩素酸ナトリウムを
総称して遊離塩素といい、これらは強い殺菌力を持つ。
これらの遊離塩素のうち、中性付近の試料水中において
は、上式(1)における平衡は右側に推移しており、Cl
2は存在しない。
NaClO + H 2 OHClO + NaOH (3) HClOClO + H + (4) Here, chlorine, hypochlorous acid and sodium hypochlorite are collectively called free chlorine, which has a strong bactericidal power.
Of these free chlorine, the equilibrium in the above formula (1) shifts to the right in the neutral sample water,
2 does not exist.

実際に殺菌を要する上下水道水,工業用水および河川水
等にはアンモニア(NH3)が含まれており、式(5),
(6),(7)で示されるようにモノクロラミン(NH2C
l),ダイクロラミン(NHCl2)およびトリクロラミン
(NCl3)が生成する。
Aqueous sewage water, industrial water, river water, etc. that require actual sterilization contain ammonia (NH 3 ).
As shown in (6) and (7), monochloramine (NH 2 C
l), dichloramine (NHCl 2 ) and trichloramine (NCl 3 ) are produced.

NH3+HOCl→NH2Cl+H2O ……(5) NH2Cl+HOCl→NHCl2+H2O ……(6) NHCl2+HOCl→NCl3+H2O ……(7) これらは結合塩素とよばれ、モノクロラミン,ダイクロ
ラミンは殺菌力を有するが、トリクロラミンは殺菌力が
ない。
NH 3 + HOCl → NH 2 Cl + H 2 O …… (5) NH 2 Cl + HOCl → NHCl 2 + H 2 O …… (6) NHCl 2 + HOCl → NCl 3 + H 2 O …… (7) These are called combined chlorine, Monochloramine and dichloramine have bactericidal activity, but trichloramine does not.

さて、この殺菌処理における塩素の注入量は、例えば水
道法では「給水せんにおける水が、遊離残留塩素を0.1p
pm以上保持するように塩素消毒すること」と義務付けら
れているので、遊離塩素の監視は不可欠である。この遊
離塩素の測定には一般にポーラログラフ法が用いられ、
試薬式と無試薬式とがあるが、試薬および試薬ポンプが
不要で保守の必要性がかなり少ないことから、最近では
無試薬式が多く用いられる。
Now, the chlorine injection amount in this sterilization treatment is, for example, in the Water Supply Act, "
It is mandatory to sterilize the chlorine so that it is kept at pm or more. Therefore, monitoring of free chlorine is indispensable. The polarographic method is generally used to measure this free chlorine,
There are a reagent type and a reagentless type, but since a reagent and a reagent pump are unnecessary and maintenance is considerably small, the reagentless type is often used recently.

この測定原理を説明する。試料水中に回転電極(金電
極)と対極(銀電極)とを浸漬させ、この間に適当な電
圧を印加すると銀電極上では、式(8),(9)の反応 Ag→Ag++e- ……(8) Ag++OCl-→AgCl+1/2O2 ……(9) 金電極上では、式(10)の反応 HOCl+e-→1/2H2+OCl- ……(10) が生じ、対極から回転電極へ向かって試料水中の遊離塩
素濃度に比例した電流が流れる。この電流を測定して遊
離塩素濃度が求められる。
The measurement principle will be described. When a rotating electrode (gold electrode) and a counter electrode (silver electrode) are immersed in sample water and an appropriate voltage is applied between them, the reaction of formulas (8) and (9) Ag → Ag + + e ... on the silver electrode. ... (8) Ag + + OCl - → AgCl + 1 / 2O 2 ...... (9) on the gold electrode, the reaction HOCl + e of formula (10) - → 1 / 2H 2 + OCl - ...... (10) occurs, rotating electrode from the counter electrode An electric current proportional to the free chlorine concentration in the sample water flows toward. By measuring this current, the concentration of free chlorine can be obtained.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

従来のポーラログラフ法による遊離塩素の測定において
は、遊離塩素と結合塩素の還元電圧が近いため遊離塩素
のみを検出することは難しく、結合塩素の影響を受ける
という問題があった。特に結合塩素の濃度は遊離塩素の
約1/4であるのでその影響は大きい。
In the conventional polarographic method for measuring free chlorine, it was difficult to detect only free chlorine because the reduction voltages of free chlorine and bound chlorine were close to each other, and there was a problem that bound chlorine was affected. Especially, since the concentration of bound chlorine is about 1/4 of that of free chlorine, its influence is great.

特に最近は河川,湖沼等の環境水の汚染が進み、アンモ
ニア濃度が高くなっていることから結合塩素の生成量が
多い。このため結合塩素に妨害されて遊離塩素を正確に
測定できず、殺菌が十分に行われているかどうかが把握
できないという問題があった。
Particularly in recent years, pollution of environmental water such as rivers and lakes has increased, and the concentration of ammonia has increased, so that the amount of bound chlorine produced is large. Therefore, there is a problem in that free chlorine cannot be accurately measured due to interference with bound chlorine, and it is not possible to determine whether or not sterilization is sufficiently performed.

この発明は上述の点に鑑みてなされ、その目的は試料水
中の次亜塩素酸に選択的なセンサを用いることにより、
結合塩素による妨害のない遊離塩素の測定方法を提供す
ることにある。
This invention has been made in view of the above points, and its object is to use a sensor selective for hypochlorous acid in sample water,
An object of the present invention is to provide a method for measuring free chlorine that does not interfere with bound chlorine.

〔課題を解決するための手段〕[Means for Solving the Problems]

本発明者らはこの問題を解決するために鋭意研究を重ね
た結果、In2O3を主成分とする金属酸化物半導体式ガス
センサが試料水中の遊離塩素の中の特に次亜塩素酸に応
答することを見出し、この知見に基づいて本発明をなす
に至った。
As a result of intensive studies to solve this problem, the present inventors have found that a metal oxide semiconductor gas sensor containing In 2 O 3 as a main component responds to hypochlorous acid in free chlorine in sample water. Based on this finding, the present invention has been completed.

上述の目的はこの発明によれば、次亜塩素酸を含む試料
水をキャリアガスと接触させ次いでキャリアガスをIn2O
3を主成分とする金属酸化物半導体式ガスセンサを用い
て測定することにより達成される。
The above-mentioned object is according to the present invention that the sample water containing hypochlorous acid is brought into contact with a carrier gas and then the carrier gas is replaced with In 2 O 3.
It is achieved by measuring with a metal oxide semiconductor type gas sensor containing 3 as a main component.

試料水とキャリアガスを接触させる方法としては、 多孔質チューブを試料水中に浸漬し、このチューブ
の中にキャリアガスを通じるチュービング法、 試料水上部の気相部で接触させるヘッドスペース
法、 試料水中に気体を吹き込むバブリング法、などがあ
る。
The sample water and carrier gas can be contacted by immersing a porous tube in sample water and passing the carrier gas through the tube, tubing method, headspace method in which the gas phase above the sample water makes contact, and sample water There is a bubbling method in which a gas is blown into.

半導体式ガスセンサは、電気絶縁性基板の表面にIn2O3
を主成分とする金属酸化物半導体薄膜を形成したもの
で、この半導体薄膜の抵抗変化によりガス成分の検出が
行われる。
The semiconductor gas sensor has an In 2 O 3 structure on the surface of an electrically insulating substrate.
A metal oxide semiconductor thin film containing as a main component is formed, and the gas component is detected by the resistance change of the semiconductor thin film.

〔作用〕[Action]

試料水中の次亜塩素酸,結合塩素はともにキャリアガス
との接触によりキャリアガス中に移行する。In2O3を主
成分とする金属酸化物半導体式ガスセンサは結合塩素に
は応答しない。試料水からキャリアガス中に移行した次
亜塩素酸は、そのままの形であるいは分解した状態でIn
2O3を主成分とする金属酸化物半導体式ガスセンサの抵
抗を変化させるものと推定される。
Both hypochlorous acid and bound chlorine in the sample water move into the carrier gas upon contact with the carrier gas. The metal oxide semiconductor gas sensor based on In 2 O 3 does not respond to bound chlorine. The hypochlorous acid transferred from the sample water into the carrier gas is not absorbed in the form as it is or in the decomposed state.
It is presumed that it changes the resistance of the metal oxide semiconductor gas sensor whose main component is 2 O 3 .

〔実施例〕〔Example〕

以下にこの発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第1図はこの発明の実施例に係る装置の構成を示す配置
図である。第1図において、1は清浄な除湿空気を得る
ための活性炭とシリカゲルが充填されたフィルタ、2お
よび3はそれぞれ乾燥ガス、キャリアガス用の流量計、
4は抽出槽で内部に試料水があり、さらに試料水中には
多孔質チューブ5が浸漬されている。この多孔質チュー
ブ5は例えば孔径0.2〜5.0μm程度で、気孔率約20〜80
%程度の連続微気孔と疎水性を有する連続多孔質四弗化
エチレン樹脂製のものである。6は気相部の遊離塩素を
検出するためのIn2O3を主成分とする金属酸化物半導体
式ガスセンサを内蔵した測定チェンバ、7はIn2O3を主
成分とする金属酸化物半導体式ガスセンサの出力を記録
するためのレコーダ、8は乾燥ガスおよびキャリアガス
を吸引するためのポンプである。
FIG. 1 is a layout diagram showing a configuration of an apparatus according to an embodiment of the present invention. In FIG. 1, 1 is a filter filled with activated carbon and silica gel for obtaining clean dehumidified air, 2 and 3 are flowmeters for dry gas and carrier gas, respectively.
An extraction tank 4 has sample water inside, and a porous tube 5 is immersed in the sample water. This porous tube 5 has, for example, a pore diameter of about 0.2 to 5.0 μm and a porosity of about 20 to 80 μm.
% Of continuous micropores and hydrophobicity and made of continuous porous tetrafluoroethylene resin. 6 is a measurement chamber containing a metal oxide semiconductor type gas sensor containing In 2 O 3 as a main component for detecting free chlorine in the gas phase, and 7 is a metal oxide semiconductor type containing In 2 O 3 as a main component. A recorder for recording the output of the gas sensor, and a pump 8 for sucking the dry gas and the carrier gas.

測定チェンバ6に内蔵されたIn2O3を主成分とする金属
酸化物半導体式ガスセンサの詳細が第2図(a),
(b)に示される。In2O3を主成分とする金属酸化物半
導体式ガスセンサは電気絶縁性基板、例えばアルミナ基
板11、アルミナ基板11の表面に蒸着により形成されたIn
2O3を主成分とする金属酸化物半導体薄膜12、半導体薄
膜12の抵抗変化を測定するPt膜電極13A,13B、アルミナ
基板11の裏面に形成された気相中の水分、油脂分による
感度の経時的劣化を避けるためのPt膜ヒータ14により構
成される。
The details of the metal oxide semiconductor type gas sensor containing In 2 O 3 as a main component built in the measurement chamber 6 are shown in FIG. 2 (a),
It is shown in (b). A metal oxide semiconductor type gas sensor containing In 2 O 3 as a main component is an electrically insulating substrate, for example, an alumina substrate 11 or an In substrate formed by vapor deposition on the surface of the alumina substrate 11.
Metal oxide semiconductor thin film 12 containing 2 O 3 as a main component, Pt film electrodes 13A and 13B for measuring the resistance change of the semiconductor thin film 12, and sensitivity due to water and oil in the vapor phase formed on the back surface of the alumina substrate 11. It is composed of a Pt film heater 14 for avoiding deterioration with time.

第1図,第2図に示した装置において、遊離塩素の測定
が如何に行われるかについて以下に述べる。
How the measurement of free chlorine is performed in the apparatus shown in FIGS. 1 and 2 will be described below.

ポンプ8によって周囲空気が装置内に吸引される。この
空気はフィルタ1で除湿,清浄化され、一方は流量計2
を通って乾燥ガスに、もう一方は流量計3を通ってキャ
リアガスになる。キャリアガスは抽出槽4内の試料水中
に浸漬された多孔質チューブ5を経由して測定チェンバ
6に至るが、多孔質チューブ5を通過するときに試料水
中の遊離塩素が多孔質チューブ5の微気孔を透過し、キ
ャリアガス中に拡散してくる。
Ambient air is sucked into the device by the pump 8. This air is dehumidified and cleaned by the filter 1, and one is flow meter 2
Through to the dry gas and the other through the flow meter 3 to become the carrier gas. The carrier gas reaches the measurement chamber 6 via the porous tube 5 immersed in the sample water in the extraction tank 4, but when passing through the porous tube 5, free chlorine in the sample water is slightly separated from the porous tube 5. It penetrates the pores and diffuses into the carrier gas.

このキャリアガス中には遊離塩素だけではなく、水蒸気
や結合塩素も拡散してくる。多孔質チューブ5から測定
チェンバ6に至る配管の温度が低ければこの水蒸気は凝
縮し、液滴になる。このようにして液滴ができれば、多
孔質チューブ5で抽出した遊離塩素が液滴部分で再び気
液平衡を起こし気相部の遊離塩素濃度が変化するから、
測定誤差の原因になる。この装置では水蒸気が凝縮しな
いように、多孔質チューブ5から測定チェンバ6に至る
配管の途中で、流量計2を経由してきた乾燥ガスと混合
している。この混合する箇所は多孔質チューブ5になる
べく近いところが望ましい。
Not only free chlorine but also water vapor and bound chlorine diffuse into the carrier gas. If the temperature of the pipe from the porous tube 5 to the measuring chamber 6 is low, this water vapor will condense and become droplets. If droplets are formed in this way, the free chlorine extracted by the porous tube 5 causes vapor-liquid equilibrium again in the droplet portion and the free chlorine concentration in the gas phase portion changes.
It causes measurement error. In this device, in order to prevent water vapor from condensing, it is mixed with the dry gas that has passed through the flowmeter 2 in the middle of the pipe from the porous tube 5 to the measurement chamber 6. It is desirable that this mixing position be as close as possible to the porous tube 5.

乾燥ガスと混合されたキャリアガスは、ついで測定チェ
ンバ6に導かれてIn2O3を主成分とする金属酸化物半導
体式ガスセンサで遊離塩素濃度が測定され、その出力は
レコーダ7に記録される。
The carrier gas mixed with the dry gas is then introduced into the measurement chamber 6 and the free chlorine concentration is measured by the metal oxide semiconductor gas sensor whose main component is In 2 O 3 , and the output is recorded in the recorder 7. .

第3図に検量線が示される。測定条件は乾燥ガス流量30
ml/min,キャリアガス流量120ml/minで、多孔質チューブ
は最大孔径2.0μm,気孔率50%,内径2.0mm,肉厚0.4mm,
長さ600mmのものである。試料水には次亜塩素酸ナトリ
ウムを適宜希釈し、リン酸緩衝液でpH=6.93に調整した
ものを用いた。次亜塩素酸濃度に応じたセンサ出力が得
られている。
A calibration curve is shown in FIG. Measurement conditions are dry gas flow rate 30
ml / min, carrier gas flow rate 120 ml / min, the porous tube has a maximum pore diameter of 2.0 μm, porosity of 50%, inner diameter of 2.0 mm, wall thickness of 0.4 mm,
It has a length of 600 mm. The sample water used was prepared by appropriately diluting sodium hypochlorite and adjusting the pH to 6.93 with a phosphate buffer. The sensor output is obtained according to the hypochlorous acid concentration.

また結合塩素の妨害についてはモノクロラミン4.9mg/1,
ダイクロラミン7.0mg/1の溶液をそれぞれ調整し、上記
装置で測定したところ、In2O3を主成分とする金属酸化
物半導体式ガスセンサの出力は全く得られず、これらの
成分には妨害されないことが明らかになった。
In addition, regarding the interference of bound chlorine, monochloramine 4.9 mg / 1,
When dichloramine 7.0 mg / 1 solution was prepared and measured with the above device, the output of the metal oxide semiconductor gas sensor containing In 2 O 3 as the main component was not obtained at all, and these components were not disturbed. It became clear.

次亜塩素酸はその一部が次亜塩素酸イオンと水素イオン
の両イオンに解離する。第4図の実線がこの解離の状態
を理論的に示すもので、pH=6以下では大部分が次亜塩
素酸として、pH=9以上では逆に大部分が次亜塩素酸イ
オンとして存在する。第4図中の○印は塩素として0.65
mg/1の次亜塩素酸ナトリウム溶液のpHを変化させて試料
水とし、これを測定したときのIn2O3を主成分とする金
属酸化物半導体式ガスセンサの電圧出力を第3図の検量
線を用いて濃度換算してHOClの存在割合を実験的に求め
たものである。In2O3を主成分とする金属酸化物半導体
式ガスセンサを使用して得られた実験値は次亜塩素酸の
存在割合を示す理論値(実線)と非常によく近似してい
ることから、In2O3を主成分とする金属酸化物半導体式
ガスセンサは試料水中の次亜塩素酸に応答していること
がわかる。
A part of hypochlorous acid is dissociated into both hypochlorite ion and hydrogen ion. The solid line in Fig. 4 theoretically shows this dissociation state, and most of it exists as hypochlorous acid at pH = 6 or less, and conversely most of it exists as hypochlorite ion at pH = 9 or more. . The circles in Fig. 4 indicate 0.65 as chlorine.
Figure 3 shows the voltage output of the metal oxide semiconductor gas sensor containing In 2 O 3 as the main component when the sample water is prepared by changing the pH of the mg / 1 sodium hypochlorite solution. The HOCl abundance ratio was experimentally obtained by converting the concentration using a line. Since the experimental value obtained using the metal oxide semiconductor gas sensor containing In 2 O 3 as the main component is very close to the theoretical value (solid line) showing the abundance ratio of hypochlorous acid, It can be seen that the metal oxide semiconductor gas sensor containing In 2 O 3 as a main component responds to hypochlorous acid in the sample water.

以上、試料水中の遊離塩素の抽出方法としてチュービン
グ法を用いた測定方法について説明してきたが、この発
明の抽出方法はチュービング法に限定されるものではな
く、試料水中の次亜塩素酸を気相中に拡散させ抽出する
方法であればその方法を問わない。
The measurement method using the tubing method as the extraction method of free chlorine in the sample water has been described above, but the extraction method of the present invention is not limited to the tubing method, and hypochlorous acid in the sample water is vapor-phased. Any method may be used as long as it is a method of diffusing it inside and extracting it.

第5図には、抽出方法としてヘッドスペース法を用いた
ときの装置構造が示される。抽出槽4内の試料水中の次
亜塩素酸は水面から気相部に拡散してくるので、第1図
に示した装置と同様に試料水中の遊離塩素が測定され
る。このヘッドスベース法の多孔質チューブを使用して
いないので構成が簡単でチューブ表面の汚れによる経時
変化がないという利点がある。
FIG. 5 shows the apparatus structure when the headspace method is used as the extraction method. Since hypochlorous acid in the sample water in the extraction tank 4 diffuses from the water surface to the gas phase, free chlorine in the sample water is measured as in the device shown in FIG. Since the porous tube of the heads base method is not used, there is an advantage that the structure is simple and there is no change with time due to dirt on the tube surface.

第6図には抽出方法としてバブリング法を用いたときの
装置構成が示される。ポンプ8でガスを吸引すると抽出
槽4内は減圧になるから、ボールディフューザ21からキ
ャリアガスが試料水中に吸い込まれ、試料水中の次亜塩
素酸は気相部に抽出される。したがって第1図に示した
装置と同様に試料水中の遊離塩素が測定される。このバ
ブリング法はヘッドスペース法と同様にチューブ表面の
汚れによる経時変化がないという利点があり、さらに試
料水中に強制的にキャリアガスを吹き込んでいることか
ら応答速度が速く、低濃度まで測定可能であるという利
点がある。
FIG. 6 shows an apparatus configuration when the bubbling method is used as the extraction method. When the gas is sucked by the pump 8, the pressure inside the extraction tank 4 is reduced, so that the carrier gas is sucked into the sample water from the ball diffuser 21 and the hypochlorous acid in the sample water is extracted into the gas phase portion. Therefore, the free chlorine in the sample water is measured as in the device shown in FIG. Similar to the headspace method, this bubbling method has the advantage that it does not change over time due to dirt on the tube surface.Because the carrier gas is forcedly blown into the sample water, the response speed is fast and low concentrations can be measured. There is an advantage.

〔発明の効果〕〔The invention's effect〕

この発明によれば、次亜塩素酸を含む試料水をキャリア
ガスと接触させ次いでキャリアガスをIn2O3を主成分と
する金属酸化物半導体式ガスセンサを用いて測定するの
で、試料水中の結合塩素の影響を受けずに試料水中の次
亜塩素酸のみを正確に測定することが可能となる。
According to this invention, sample water containing hypochlorous acid is brought into contact with a carrier gas, and then the carrier gas is measured using a metal oxide semiconductor gas sensor having In 2 O 3 as a main component. Only the hypochlorous acid in the sample water can be accurately measured without being affected by chlorine.

【図面の簡単な説明】[Brief description of drawings]

第1図はこの発明の実施例に係る装置の構成を示す配置
図、第2図はこの発明の実施例に係るIn2O3を主成分と
する金属酸化物半導体式ガスセンサを示し第2図(a)
はその斜視図、第2図(b)はその断面図、第3図はこ
の発明の実施例に係る検量関係を示す線図、第4図はHO
Cl存在割合のpH依存性につき理論値(実線)と実験値
(○)を対比して示す線図、第5図はこの発明の異なる
実施例に係る装置の構成を示す配置図、第6図はこの発
明のさらに異なる実施例に係る装置の構成を示す配置図
である。 1:フィルタ、4:抽出槽、5:多孔質チューブ、6:測定チェ
ンバ,7:レコーダ、8:ポンプ、11:アルミナ基板、12:半
導体薄膜、13A,13B:Pt膜電極、14:Pt膜ヒータ、21:ボー
ルディフューザ。
FIG. 1 is a layout diagram showing the configuration of an apparatus according to an embodiment of the present invention, and FIG. 2 shows a metal oxide semiconductor type gas sensor containing In 2 O 3 as a main component according to the embodiment of the present invention. (A)
Is a perspective view thereof, FIG. 2 (b) is a sectional view thereof, FIG. 3 is a diagram showing a calibration relationship according to an embodiment of the present invention, and FIG.
FIG. 6 is a diagram showing the theoretical value (solid line) and the experimental value (◯) of the Cl dependence in relation to pH, and FIG. 5 is a layout diagram showing the configuration of an apparatus according to another embodiment of the present invention. FIG. 6 is a layout view showing a configuration of an apparatus according to still another embodiment of the present invention. 1: Filter, 4: Extraction tank, 5: Porous tube, 6: Measuring chamber, 7: Recorder, 8: Pump, 11: Alumina substrate, 12: Semiconductor thin film, 13A, 13B: Pt film electrode, 14: Pt film Heater, 21: Ball diffuser.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 星川 寛 神奈川県川崎市川崎区田辺新田1番1号 富士電機株式会社内 (72)発明者 河野 勝 神奈川県川崎市川崎区田辺新田1番1号 富士電機株式会社内 (72)発明者 高田 義 大阪府大阪市淀川区三津屋中2丁目5番4 号 新コスモス電機株式会社内 (72)発明者 酒井 才 大阪府大阪市淀川区三津屋中2丁目5番4 号 新コスモス電機株式会社内 (72)発明者 青木 豊明 大阪府枚方市楠葉野田3丁目37番32号 (72)発明者 濱 幸男 大阪府茨木市野々宮2丁目453番地 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Hiroshi Hoshikawa 1-1 Tanabe Nitta, Kawasaki-ku, Kawasaki-shi, Kanagawa Fuji Electric Co., Ltd. (72) Inventor Katsugu Kono 1 Tanabe Nitta, Kawasaki-ku, Kawasaki-shi, Kanagawa No. 1 in Fuji Electric Co., Ltd. (72) Inventor Yoshitaka Takada 2-5-4 Mitsuyachu, Yodogawa-ku, Osaka-shi, Osaka Inside New Cosmos Electric Co., Ltd. (72) Inventor Sakai, 2 Mitsuya-chu, Yodogawa-ku, Osaka-shi, Osaka Chome 5-4 New Cosmos Electric Co., Ltd. (72) Inventor Toyoaki Aoki 3-37-32 Kusuhada, Hirakata-shi, Osaka (72) Inventor Yukio Hama 2-453 Nonomiya, Ibaraki-shi, Osaka

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】次亜塩素酸を含む試料水をキャリアガスと
接触させ、次いでキャリアガスをIn2O3を主成分とする
金属酸化物半導体式ガスセンサを用いて測定することを
特徴とする試料水中の遊離塩素の測定方法。
1. A sample characterized in that sample water containing hypochlorous acid is brought into contact with a carrier gas, and then the carrier gas is measured using a metal oxide semiconductor gas sensor containing In 2 O 3 as a main component. Method for measuring free chlorine in water.
JP6958889A 1989-03-22 1989-03-22 Method for measuring free chlorine in sample water Expired - Lifetime JPH0778478B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6958889A JPH0778478B2 (en) 1989-03-22 1989-03-22 Method for measuring free chlorine in sample water

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6958889A JPH0778478B2 (en) 1989-03-22 1989-03-22 Method for measuring free chlorine in sample water

Publications (2)

Publication Number Publication Date
JPH02248851A JPH02248851A (en) 1990-10-04
JPH0778478B2 true JPH0778478B2 (en) 1995-08-23

Family

ID=13407139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6958889A Expired - Lifetime JPH0778478B2 (en) 1989-03-22 1989-03-22 Method for measuring free chlorine in sample water

Country Status (1)

Country Link
JP (1) JPH0778478B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04204242A (en) * 1990-11-30 1992-07-24 Osaka Prefecture Analytical device for ozone in solution

Also Published As

Publication number Publication date
JPH02248851A (en) 1990-10-04

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