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JPH0779169B2 - Infrared detector manufacturing method - Google Patents
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JPH0779169B2 - Infrared detector manufacturing method - Google Patents

Infrared detector manufacturing method

Info

Publication number
JPH0779169B2
JPH0779169B2 JP3209615A JP20961591A JPH0779169B2 JP H0779169 B2 JPH0779169 B2 JP H0779169B2 JP 3209615 A JP3209615 A JP 3209615A JP 20961591 A JP20961591 A JP 20961591A JP H0779169 B2 JPH0779169 B2 JP H0779169B2
Authority
JP
Japan
Prior art keywords
infrared detector
container
cooler
infrared
detection cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3209615A
Other languages
Japanese (ja)
Other versions
JPH0548122A (en
Inventor
雅夫 中山
長 辻村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP3209615A priority Critical patent/JPH0779169B2/en
Publication of JPH0548122A publication Critical patent/JPH0548122A/en
Publication of JPH0779169B2 publication Critical patent/JPH0779169B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は赤外線検出器の製造方法
に係り、特に詳細には、PbS、HgCdTeまたはI
nSb等の量子型検出セルを用いるものに使用される。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an infrared detector, and more particularly to PbS, HgCdTe or I.
It is used for those using quantum type detection cells such as nSb.

【0002】[0002]

【従来の技術】量子型検出セルを使用するためには、冷
却が必要であり、このためにペルチェ効果を利用したペ
ルチェクーラーが使用される。そして、ペルチェクーラ
ーを付設した赤外線検出器においては、容器内にN2
Xe等の不活性ガスが封入されている。また、量子型検
出セルの使用中の温度を低くするために、多段のペルチ
ェクーラーを用いることがある。
2. Description of the Related Art In order to use a quantum type detection cell, cooling is required, and a Peltier cooler utilizing the Peltier effect is used for this purpose. In an infrared detector equipped with a Peltier cooler, N 2 in the container,
An inert gas such as Xe is enclosed. Further, in order to lower the temperature during use of the quantum detection cell, a multi-stage Peltier cooler may be used.

【0003】ところが、容器内にガスが封入されている
と、これに対流が生じ、量子型検出セルを十分に低温に
はできない。具体的には、周囲温度が25゜C程度で
は、量子型検出セルは−70゜C程度までしか下がらな
い。これに対し、多段のペルチェクーラーを用い、容器
の内部を真空にしておくと、上記の対流が生じないの
で、例えば三段のペルチェクーラーでも、量子型検出セ
ルを−80゜C程度まで冷却できる。
However, when the gas is enclosed in the container, convection occurs in the gas, and the quantum type detection cell cannot be kept at a sufficiently low temperature. Specifically, when the ambient temperature is about 25 ° C, the quantum type detection cell can be lowered only to about -70 ° C. On the other hand, if a multi-stage Peltier cooler is used and the inside of the container is evacuated, the above convection does not occur. Therefore, for example, even with a three-stage Peltier cooler, the quantum detection cell can be cooled to about -80 ° C. .

【0004】[0004]

【発明が解決しようとする課題】しかし、真空排気した
赤外線検出器であっても、センサとしての使用を続ける
と、容器の内部からガスが放出されて冷却効果が経時的
に低下してくる。特に、この内部放出ガスは熱伝導性の
良いH2 を多く含んでいるため、初期の冷却効果は長時
間の使用により大きく低下してしまう。
However, even if the infrared detector is evacuated, if it is continuously used as a sensor, gas is released from the inside of the container and the cooling effect deteriorates with time. In particular, since this internally released gas contains a large amount of H 2 having good thermal conductivity, the initial cooling effect is greatly reduced by long-term use.

【0005】そこで本発明は、長期的な冷却効果に優れ
た赤外線検出器の製造方法を提供することを目的とす
る。
Therefore, it is an object of the present invention to provide a method for manufacturing an infrared detector having a long-term cooling effect.

【0006】[0006]

【課題を解決するための手段】本発明は、容器内に赤外
線検出素子と冷却器を内蔵した赤外線検出器の製造方法
において、冷却器に通電することで冷却動作をさせなが
ら、容器を加熱してガス出しすることを特徴とする。
SUMMARY OF THE INVENTION The present invention is a method of manufacturing an infrared detector having an infrared detecting element and a cooler built in the container, wherein the container is heated while the cooling operation is performed by energizing the cooler. It is characterized by discharging gas.

【0007】[0007]

【作用】本発明によれば、量子型検出セルのような赤外
線検出素子を用いた赤外線検出器のガス出しを行なうに
際して、冷却器を動作させているので、赤外線検出素子
の特性を加熱によって劣化させることなく、容器の内部
のガス抜きが行なえる。
According to the present invention, since the cooler is operated when degassing the infrared detector using the infrared detecting element such as the quantum detection cell, the characteristics of the infrared detecting element are deteriorated by heating. The inside of the container can be degassed without being forced to do so.

【0008】[0008]

【実施例】以下、添付図面により、本発明の実施例を説
明する。
Embodiments of the present invention will be described below with reference to the accompanying drawings.

【0009】図1は赤外線検出器の一部を断面で示した
側面図である。図示の通り、外部端子1と排気管7が形
成されたベース板2にはキャップ3が固定され、容器が
構成されている。ベース板2上には三段構成のペルチェ
クーラー4が設けられ、この上に量子型検出セル5がマ
ウントされている。一方、キャップ3の上部には開口が
形成され、ここに赤外線入射窓6が取り付けられてい
る。
FIG. 1 is a side view showing a part of the infrared detector in cross section. As illustrated, the cap 3 is fixed to the base plate 2 on which the external terminal 1 and the exhaust pipe 7 are formed, thereby forming a container. A three-stage Peltier cooler 4 is provided on the base plate 2, and a quantum detection cell 5 is mounted thereon. On the other hand, an opening is formed in the upper portion of the cap 3, and the infrared incident window 6 is attached to the opening.

【0010】このような赤外線検出器を製造するに際し
ては、排気管7を真空排気装置(図示せず)に接続して
ペルチェクーラー4に通電し、量子型検出セル5を冷却
する。そして、容器全体をヒータ(図示せず)などで加
熱することにより、内部ガスの放出および排気を行う。
In manufacturing such an infrared detector, the exhaust pipe 7 is connected to a vacuum exhaust device (not shown) to energize the Peltier cooler 4 to cool the quantum detection cell 5. Then, the entire container is heated by a heater (not shown) or the like to release and exhaust the internal gas.

【0011】この場合、容器の温度を80〜100°C
にすると、ペルチェクーラー4の冷却効果によって量子
型検出セル5を60°C以下に保持でき、したがって特
性が劣化しない。すなわち、PbS、PbSe、HgC
dTe、InSb、InAs等の量子型検出セルは、6
0°C以上の高温にさらすと特性が劣化するので、従来
は容器にデバイスをセットした後のガス抜きが実行でき
なかったが、本発明のような冷却を併行させることによ
り、内部ガスの放出が可能になる。
In this case, the temperature of the container is 80 to 100 ° C.
In this case, the cooling effect of the Peltier cooler 4 allows the quantum detection cell 5 to be kept at 60 ° C. or lower, and therefore the characteristics do not deteriorate. That is, PbS, PbSe, HgC
Quantum-type detection cells such as dTe, InSb, InAs, etc.
Since the characteristics are deteriorated when exposed to a high temperature of 0 ° C. or higher, conventionally, it was impossible to perform degassing after setting a device in a container, but by performing cooling as in the present invention, release of internal gas Will be possible.

【0012】内部ガスの放出後には、容器を封じ切る。
これにより、長時間の使用によっても、容器の内部にお
ける真空度が低下せず、したがって、対流や熱伝導によ
る量子型検出セルの温度上昇を抑え得る赤外線検出器が
得られる。
After releasing the internal gas, the container is sealed off.
As a result, an infrared detector can be obtained in which the degree of vacuum inside the container does not decrease even after long-term use, and therefore the temperature rise of the quantum detection cell due to convection or heat conduction can be suppressed.

【0013】本発明者は、本発明の有用性を確認するた
め、バルクゲッター付きの赤外線検出器を用いて実験し
た。まず、Xeガスを封入した従来タイプでは、環境温
度が25゜Cで検出セルを−60゜Cまでしか冷却でき
なかった。ただし、経時的な劣化は少なかった(図2の
クロス印)。一方、真空排気した従来タイプでは、初期
の冷却効果は高く、検出セルは−80゜C程度になった
が、1000時間程度の使用で−60゜Cまで温度上昇
した(図2の黒丸印)。これに対し、本発明の処理をし
た赤外線検出器では、−75゜C程度の冷却効果を長時
間にわたって維持できた(図2の白丸印)。
The present inventor conducted an experiment using an infrared detector with a bulk getter in order to confirm the usefulness of the present invention. First, in the conventional type in which Xe gas was sealed, the detection cell could only be cooled to -60 ° C when the ambient temperature was 25 ° C. However, deterioration with time was small (cross mark in FIG. 2). On the other hand, in the conventional type that was evacuated, the initial cooling effect was high, and the temperature of the detection cell was about -80 ° C, but the temperature rose to -60 ° C after about 1000 hours of use (black circle in Fig. 2). . On the other hand, in the infrared detector treated according to the present invention, the cooling effect of about −75 ° C. could be maintained for a long time (white circle in FIG. 2).

【0014】[0014]

【発明の効果】以上、詳細に説明した通り、本発明によ
れば、量子型検出セルのような赤外線検出素子を搭載し
た検出器のガス出しを行なうに際して、冷却器を動作さ
せているので、赤外線検出素子の特性を加熱によって劣
化させることなく、内部のガス抜きが行なえる。このた
め、冷却効果を長時間にわたって維持できる赤外線検出
器が得られる。
As described above in detail, according to the present invention, the cooler is operated when the detector equipped with the infrared detecting element such as the quantum detection cell is degassed. Internal degassing can be performed without deteriorating the characteristics of the infrared detection element by heating. Therefore, an infrared detector capable of maintaining the cooling effect for a long time can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】赤外線検出器の構成を示す図である。FIG. 1 is a diagram showing a configuration of an infrared detector.

【図2】本発明の効果を従来技術と比較する図である。FIG. 2 is a diagram comparing the effect of the present invention with a conventional technique.

【符号の説明】[Explanation of symbols]

2…ベース板 3…キャップ 4…ペルチェクーラー 5…量子型検出セル 6…赤外線入射窓 7…排気管 2 ... Base plate 3 ... Cap 4 ... Peltier cooler 5 ... Quantum type detection cell 6 ... Infrared entrance window 7 ... Exhaust pipe

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 容器内に赤外線検出素子と冷却器を内蔵
した赤外線検出器の製造方法において、 前記冷却器に通電することで冷却動作をさせながら、前
記容器を加熱してガス出しすることを特徴とする赤外線
検出器の製造方法。
1. A method of manufacturing an infrared detector having an infrared detection element and a cooler built-in in a container, wherein the container is heated to discharge gas while a cooling operation is performed by energizing the cooler. A method for manufacturing a featured infrared detector.
【請求項2】 前記赤外線検出素子はPbS、HgCd
TeまたはInSbの量子型検出セルであり、前記冷却
器はペルチェクーラーである請求項1記載の赤外線検出
器の製造方法。
2. The infrared detection element is PbS, HgCd
The method for manufacturing an infrared detector according to claim 1, wherein the infrared detector is a quantum detection cell of Te or InSb, and the cooler is a Peltier cooler.
JP3209615A 1991-08-21 1991-08-21 Infrared detector manufacturing method Expired - Fee Related JPH0779169B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3209615A JPH0779169B2 (en) 1991-08-21 1991-08-21 Infrared detector manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3209615A JPH0779169B2 (en) 1991-08-21 1991-08-21 Infrared detector manufacturing method

Publications (2)

Publication Number Publication Date
JPH0548122A JPH0548122A (en) 1993-02-26
JPH0779169B2 true JPH0779169B2 (en) 1995-08-23

Family

ID=16575734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3209615A Expired - Fee Related JPH0779169B2 (en) 1991-08-21 1991-08-21 Infrared detector manufacturing method

Country Status (1)

Country Link
JP (1) JPH0779169B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3405793B2 (en) * 1993-12-28 2003-05-12 日本信号株式会社 Image type pedestrian detection device

Also Published As

Publication number Publication date
JPH0548122A (en) 1993-02-26

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