JPH0781180B2 - Thin film manufacturing method - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a method for producing a thin film, and in particular, uses ion implantation and vapor deposition together to form a strong thin film on the surface of a tool or a mold having a complicated shape. The present invention relates to a method for producing a thin film suitable for the above.

[Conventional technology]

As a method for producing a thin film that uses both ion implantation and vapor deposition at the same time, conventionally, for example, Newclear Instruments and Methods Informatics Research B6 (1985)
Pages 111-115 (Nuclear Instuments and Methads i
n Physics Research B6 (1985) pp111-115).

[Problems to be solved by the invention]

The above-mentioned prior art does not give consideration to the treatment of tools and dies having complicated shapes, and has a problem of performing treatment many times.

An object of the present invention is to provide a method for producing a thin film, which can process a tool or a mold having a complicated shape at one time.

[Means for solving problems]

The above-mentioned purpose is to arrange the flow of particles from the particle source and the flow of implanted ions so that they are substantially orthogonal to each other, paying attention to the surface to which particles and ions are simultaneously irradiated and the surface to be intermittently irradiated. This is achieved by measuring the performance of thin films. That is, the time during which the rotation axis is rotated half a time to simultaneously form a necessary thin film on the surface on which the ion beam of the ion source and the particles of the particle source are simultaneously irradiated and the surface adjacent to the surface on which the simultaneous irradiation is performed, is t, When the film growth rate per unit time is a and the average penetration depth of the ion beam on the surface of the thin film formation is R _P , the rotation speed of the rotating shaft is set so that t ≦ R _P / a It was done.

[Action]

This will be described with reference to FIG. In FIG. 2, an ion source and a particle source (an electron beam vapor deposition apparatus or an ion beam sputtering apparatus for forming a thin film of metal, ceramics, etc. by vapor deposition or sputtering) are defined so that the directions of flight of the ion beam and the particles are substantially orthogonal. Place). The surface A, which is the front surface of the thin film formation object, is simultaneously irradiated with the ion beam and particles. Adjacent
Each surface of B, C, D and E is irradiated intermittently. For example, second
In the figure, the B surface is only irradiated with the ion beam, while the D surface is only irradiated with particles from the particle source. Therefore, if the thickness of the particles on the D surface becomes too thick, there is a limit to the depth at which the ion beam penetrates from the surface, which is limited by the energy of the ion beam. Occurs. In order to prevent this, the rotation speed is increased so that ion beam irradiation can be performed at the stage of a sufficiently thin film. When the film thickness growth rate of the D surface by the particles of the particle source is a per unit time, and the time of half rotation is t,
When the surface D rotates a half turn from the state of FIG. 2 and becomes irradiated with the ion beam, the average range R _{P of} the ion beam in the film penetrates, so at ≦ R _P, that is, Since it takes 2 tons to make a round, As described above, by increasing the rotation speed of the thin film forming object, a thin film having good film quality can be attached to each of B, C, D, and E surfaces simultaneously with the A surface.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG. The thin film forming object 1 is a cylindrical pin, and the ion beam 2 is 20 kV.
The nitrogen ion beam accelerated by 1., the particle source 3 is an electron beam vapor deposition apparatus, and titanium particles are supplied to the surface of the thin film formation object 1 by evaporation of titanium. As shown in FIG. 1, the front surface of the thin film formation object 1 is divided into four spaces by two planes including a front surface of the thin film formation object 1 and a plane orthogonal to the rotation axis and a plane including the rotation axis. An ion source and a particle source are arranged in each of two different spaces that directly face each other. When the thin film forming object 1 was rotated on the rotation axis, the deposition rate of titanium was set to 6Å / sec on a plane inclined by 45 degrees with respect to the direction of particles from the particle source 3. Since 20 keV nitrogen ions have a penetration depth of about 140Å, a cylindrical pin 1 rotated at a rotation speed of at least one rotation in 140 × 2 ÷ 647 seconds.
Since the titanium nitride had a continuous film, it had a corrosion resistance against molten aluminum that was 6 times or more that of untreated pins. The performance of the sample whose rotation speed was slower than that of the above sample gradually deteriorated, and, for example, the corrosion resistance of the pin whose rotation speed was 1/4 was lowered to 1/3 of that of the treated pin.

〔The invention's effect〕

According to the present invention described above, since the simultaneous irradiation surface and its adjacent surface can be processed at one time, there is an effect that a complicated tool or mold can be processed at one time.

[Brief description of drawings]

FIG. 1 is a cross-sectional configuration diagram of one embodiment of the present invention, and FIG. 2 is an explanatory diagram explaining the principle of the present invention. 1 ... Thin film forming object, 2 ... Ion beam, 3 ... Particle source.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tomoe Kurosawa 4026 Kujimachi, Hitachi City, Ibaraki Prefecture Hitachi Research Laboratory, Ltd. (72) Inventor Kenji Sugiyama 1618 Ida, Nakahara-ku, Kawasaki City, Kanagawa Pref. (1) Kimitsu, Kimitsu-shi, Chiba Prefecture, Nippon Steel Co., Ltd. (72) Inventor, Katsuhiko Yui, Kimitsu Co., Ltd. (72), Kazuhiko Fukuya, Kimitsu, Chiba Prefecture, Japan. Stock company Kimitsu Works (72) Inventor Masahisa Akazawa 5-10-1 Fuchinobe, Sagamihara City, Kanagawa Nippon Steel Co., Ltd.

Claims (1)

[Claims] Claim: What is claimed is: 1. Among four spaces divided into two planes, a plane including a rotation axis for rotating a thin film formation object and a plane including a front surface of the thin film formation object and orthogonal to the plane including the rotation axis. An ion source and a particle source are provided in each of two different spaces that directly face the front surface of the thin film formation, and a surface for simultaneously irradiating the ion beam of the ion source and particles of the particle source is adjacent to the surface for simultaneous irradiation. In order to simultaneously form a required thin film on the surface to be formed, the time taken for the rotation axis to make a half rotation is t, the film growth rate per unit time is a, and the average penetration depth of the ion beam on the surface of the thin film forming object ( A method for producing a thin film, characterized in that the rotation speed of the rotating shaft is set so that t ≤ R _P / a when the average range) is R _P.