JPH0785102B2 - Measuring method using magnetic artificial lattice film - Google Patents
Measuring method using magnetic artificial lattice filmInfo
- Publication number
- JPH0785102B2 JPH0785102B2 JP4241500A JP24150092A JPH0785102B2 JP H0785102 B2 JPH0785102 B2 JP H0785102B2 JP 4241500 A JP4241500 A JP 4241500A JP 24150092 A JP24150092 A JP 24150092A JP H0785102 B2 JPH0785102 B2 JP H0785102B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- artificial lattice
- magnetic field
- thermal conductivity
- lattice film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 126
- 238000000034 method Methods 0.000 title description 13
- 239000010408 film Substances 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 27
- 230000005415 magnetization Effects 0.000 claims description 14
- 238000000691 measurement method Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000010949 copper Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 10
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 4
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【産業上の利用分野】本発明は磁性人工格子膜を用いた
磁界の測定方法に関するもで、磁気センサーに応用でき
る。The present invention relates to a method for measuring a magnetic field using a magnetic artificial lattice film, which can be applied to a magnetic sensor.
【０００２】[0002]
【従来の技術】従来、外部磁界強度を信号として読み出
すためのセンサーあるいは測定方法としては、強磁性体
を使った磁気抵抗効果型磁気センサー、半導体を使った
ホール効果素子などが使われてきた。これらのセンサー
は非接触型で信頼性が高く、磁気抵抗効果素子は、外部
磁界に対する感度が良いことからモーターの回転センサ
ー、磁気記録読み出し用ヘッドとして広く使われてい
る。2. Description of the Related Art Conventionally, as a sensor or a measuring method for reading the external magnetic field intensity as a signal, a magnetoresistive effect type magnetic sensor using a ferromagnetic material, a Hall effect element using a semiconductor and the like have been used. These sensors are non-contact type and highly reliable, and the magnetoresistive effect element is widely used as a motor rotation sensor and a magnetic recording / reading head because of its high sensitivity to an external magnetic field.
【０００３】例えば磁気センサーとして特開昭６２−１
５９３１８号公報がある。また、ＭＲヘッドやセンサー
として用いられる磁性膜として、特開平３−２８５３０
７号公報、特開平４−２７１０６号公報、特開昭６３−
１７６４５４号公報、特開昭６４−３９０１２号公報、
得かい平２−２３６７９号公報等がある。これの素子ま
たは材料は磁気抵抗効果、または磁気特性を利用したも
のである。For example, as a magnetic sensor, JP-A-62-1
There is a 59318 publication. Further, as a magnetic film used as an MR head or a sensor, there is disclosed in Japanese Patent Laid-Open No. 3-28530.
7, JP-A-4-27106, JP-A-63-
176454, JP-A-64-39012,
There is Tokukaihei No. 2-36679. The element or material of this utilizes the magnetoresistive effect or magnetic characteristics.
【０００４】[0004]
【発明が解決しようとする課題】従来のホールセンサ
ー、磁気抵抗効果素子では外部磁界強度によりその材料
の抵抗値が変わる性質を利用して外部磁界変化を読みと
っていた。しかし従来の磁気抵抗効果素子では、抵抗変
化率の大きさが小さい等の問題があった。そのため、高
精度高感度な測定が難しいという問題があった。In the conventional Hall sensor and magnetoresistive effect element, the change of the external magnetic field is read by utilizing the property that the resistance value of the material changes with the intensity of the external magnetic field. However, the conventional magnetoresistive effect element has a problem that the resistance change rate is small. Therefore, there is a problem that it is difficult to perform highly accurate and highly sensitive measurement.
【０００５】本発明の目的は磁性人工格子膜を用いた新
しい概念の測定方法を提供するものである。An object of the present invention is to provide a new concept of measuring method using a magnetic artificial lattice film.
【０００６】[0006]
【課題を解決するための手段】本発明の方法は、非磁性
薄膜層と磁性薄膜層とを交互に積層された磁性人工格子
膜を用いて、該磁性人工格子膜の熱伝導率変化から外部
磁界の強さを測定することを特徴とする磁性人工格子膜
を用いた測定方法である。The method of the present invention uses a magnetic artificial lattice film in which a non-magnetic thin film layer and a magnetic thin film layer are alternately laminated, and changes from the thermal conductivity of the magnetic artificial lattice film to the outside. It is a measuring method using a magnetic artificial lattice film characterized by measuring the strength of a magnetic field.
【０００７】または、非磁性薄膜層と磁性薄膜層とを交
互に積層された磁性人工格子膜を用いて、該磁性人工格
子膜の熱伝導率変化から磁性を有する物体の運動状態あ
るいは位置関係を測定することを特徴とする磁性人工格
子膜を用いた測定方法である。Alternatively, by using a magnetic artificial lattice film in which non-magnetic thin film layers and magnetic thin film layers are alternately laminated, the motion state or positional relationship of a magnetic object can be determined from the change in thermal conductivity of the magnetic artificial lattice film. It is a measuring method using a magnetic artificial lattice film characterized by measuring.
【０００８】本発明の測定方法は、磁気媒体あるいは磁
石に対向して、磁界変化に対応して熱伝導度が変化する
磁性人工格子膜を用いる。磁性人工格子膜は基板と該基
板上に非磁性薄膜を介して積層された磁性薄膜である。
ここで使用する人工格子膜は、外部磁界によって隣り合
った磁性薄膜の磁化の向きを反平行と平行と制御出来る
ことが必須である。金属材料の場合には、熱は主に自由
電子で運ばれるため、熱伝導率は自由電子の平均自由工
程長に依存する。The measuring method of the present invention uses a magnetic artificial lattice film which faces a magnetic medium or a magnet and whose thermal conductivity changes in response to a change in magnetic field. The magnetic artificial lattice film is a substrate and a magnetic thin film laminated on the substrate via a non-magnetic thin film.
It is essential that the artificial lattice film used here can control the magnetization directions of adjacent magnetic thin films to be antiparallel or parallel by an external magnetic field. In the case of metallic materials, heat is mainly carried by free electrons, so the thermal conductivity depends on the mean free path length of free electrons.
【０００９】近年、磁性層と非磁性層を互いに積層した
人工格子膜で外部磁界により互いに隣合った磁性薄膜層
の磁化の向きを逆方向、同方向に自由に制御出来ること
がわかってきている。この人工格子膜では伝導電子が磁
性薄膜層の磁化の向きによりスピンに依存した散乱を受
ける。すなわち互いに隣合った磁性薄膜層の磁化の向き
により自由電子の平均自由行程長が変わり、膜の熱伝導
率Ｋを制御出来る。In recent years, it has been known that an artificial lattice film in which a magnetic layer and a non-magnetic layer are laminated on each other can freely control the magnetization directions of adjacent magnetic thin film layers by an external magnetic field in opposite directions. . In this artificial lattice film, conduction electrons are scattered depending on the spin depending on the magnetization direction of the magnetic thin film layer. That is, the mean free path length of free electrons changes depending on the magnetization direction of the magnetic thin film layers adjacent to each other, and the thermal conductivity K of the film can be controlled.
【００１０】隣合った磁性薄膜層の磁化の向きを逆向き
にする方法は、磁性薄膜層の磁化が非磁性薄膜層を介し
て反強磁性的結合しているＦｅ／Ｃｒ，Ｃｏ／Ｃｕ膜、
または隣合った磁性薄膜層の保磁力差を利用したＮｉＦ
ｅ／Ｃｕ／Ｃｏ／Ｃｕ膜などがある。本発明では磁化の
逆向きが実現しさえすれば熱伝導率は変化するので、ど
ちらを使用しても良い。The method of reversing the magnetization directions of the adjacent magnetic thin film layers is a Fe / Cr, Co / Cu film in which the magnetizations of the magnetic thin film layers are antiferromagnetically coupled via the non-magnetic thin film layer. ,
Or NiF utilizing the coercive force difference between adjacent magnetic thin film layers
There are e / Cu / Co / Cu films and the like. In the present invention, the thermal conductivity changes as long as the reverse magnetization is realized, so either one may be used.
【００１１】[0011]
【作用】本発明は、磁性人工格子膜が外部磁界により熱
伝導率が変化するという特性を利用する。この現象を利
用し、逆に熱伝導率の変化から外部磁界の強度あるいは
磁性をもつ物体の運動の状態を測定するものである。The present invention takes advantage of the characteristic of the magnetic artificial lattice film that the thermal conductivity changes due to the external magnetic field. By utilizing this phenomenon, on the contrary, the strength of an external magnetic field or the state of motion of an object having magnetism is measured from the change in thermal conductivity.
【００１２】図を用いて本発明の原理を説明する。本発
明で用いる磁性人工格子膜は磁性薄膜と非磁性薄膜を交
互に積層したものである。ここでは一例として図４
（Ａ）に示すように基板１０上に磁性薄膜ＮｉＦｅ（厚
さ２０Ａ）非磁性薄膜Ｃｕ（厚さ４０Ａ）、磁性薄膜Ｃ
ｏ（厚さ２０Ａ）、非磁性薄膜Ｃｕ（厚さ４０Ａ）を５
０層積層したものを用いて説明する。The principle of the present invention will be described with reference to the drawings. The magnetic artificial lattice film used in the present invention is one in which magnetic thin films and non-magnetic thin films are alternately laminated. Here, as an example, FIG.
As shown in (A), a magnetic thin film NiFe (thickness 20 A), a non-magnetic thin film Cu (thickness 40 A), and a magnetic thin film C are formed on the substrate 10.
o (thickness 20A), non-magnetic thin film Cu (thickness 40A) 5
An explanation will be given by using a stack of 0 layers.
【００１３】測定は図４（Ｂ）に示すように４Ｋに保た
れた銅ブロックに、磁性人工格子膜１が形成された基板
を接触させ、磁性人工格子膜を４Ｋに冷却して行った。
この状態でヒーター部９により一定の熱量を加え、サー
モカップルゲージ７，８で、温度差を測定することによ
り熱伝導変化ΔΚを磁性人工格子膜への印加磁界を変え
ながら測定した。The measurement was carried out by bringing the substrate on which the magnetic artificial lattice film 1 was formed into contact with a copper block kept at 4K as shown in FIG. 4B and cooling the magnetic artificial lattice film to 4K.
In this state, a constant amount of heat was applied by the heater unit 9 and the temperature difference was measured with the thermocouple gauges 7 and 8 to measure the heat conduction change ΔK while changing the magnetic field applied to the magnetic artificial lattice film.
【００１４】その結果を図３に示す。図３は熱伝導率変
化ΔΚと外部磁界の強さＨとの関係を示す図である。外
部磁界は人工格子膜面内方向で強さを−３０００〜３０
００Ｏｅまで変化させて測定した。図３に示すように熱
伝導率変化は磁界に対しヒシテリシスをとっている。図
３でΚｏはＨ＝３０００ Ｏｅのときの熱伝導率価であ
り、ΔΚをこの値で規格している。The results are shown in FIG. FIG. 3 is a diagram showing the relationship between the change ΔH in thermal conductivity and the strength H of the external magnetic field. The external magnetic field has a strength of -3000 to 30 in the in-plane direction of the artificial lattice film.
The measurement was performed by changing it to 00 Oe. As shown in FIG. 3, the change in thermal conductivity is hysteretic with respect to the magnetic field. In FIG. 3, Ko is the thermal conductivity value when H = 3000 Oe, and ΔK is specified by this value.
【００１５】この磁性人工格子膜はＯ磁場では磁化方向
は、磁化の向きがほぼ平行にそろっているが、磁界をか
けると、先にＮｉＦｅの磁化が反転し、ＮｉＦｅとＣｏ
との間で磁化の向きが反平行の状態が得られる。このと
き伝導電子が最もよく散乱されるので、熱伝送率が大き
く下がるのでその変化が最も大きくなる。In this magnetic artificial lattice film, the magnetization directions in the O magnetic field are substantially parallel to each other. However, when a magnetic field is applied, the magnetization of NiFe is first inverted and NiFe and Co are reversed.
It is possible to obtain a state in which the magnetization directions are antiparallel to each other. At this time, the conduction electrons are scattered most, so that the heat transfer rate greatly decreases and the change becomes the largest.
【００１６】このようにして隣合った磁性薄膜の磁化が
反平行となる磁界付近で大きく熱伝導率が変化するの
で、熱伝導率を用いて磁界測定が可能となる。ここでは
磁界の変化による熱伝導率変化が１０〜１００％と大き
いので、従来の磁気−抵抗効果を用いたものに比べ、感
度の良い測定ができる。In this way, since the thermal conductivity greatly changes in the vicinity of the magnetic field in which the magnetizations of the adjacent magnetic thin films are antiparallel, the magnetic field can be measured using the thermal conductivity. Here, since the change in thermal conductivity due to the change in magnetic field is as large as 10 to 100%, the measurement can be performed with higher sensitivity than that using the conventional magnetic-resistance effect.
【００１７】またＮｉＦｅ／Ｃｕ／Ｃｏ／ＣｕのＣｕの
厚さを変えることにより熱伝導率の大きく変化する磁界
の領域を変えられるので、測定したい磁界強度により磁
性人工格子膜構造を変えればよい。By changing the thickness of Cu of NiFe / Cu / Co / Cu, the region of the magnetic field in which the thermal conductivity greatly changes can be changed. Therefore, the magnetic artificial lattice film structure can be changed according to the magnetic field strength to be measured.
【００１８】また、Ｆｅ／Ｃｒ，Ｃｏ／Ｃｕ等の０磁場
で反強磁性的に結合しているものは０磁場付近でピーク
をもつ熱伝導率−磁気特性を持つ。Further, Fe / Cr, Co / Cu, etc. which are antiferromagnetically coupled in a zero magnetic field have a thermal conductivity-magnetic characteristic having a peak in the vicinity of the zero magnetic field.
【００１９】この外部磁界Ｈと熱伝導率の変化ΔΚの関
係を用いると、熱伝導率の変化から外部磁界の強さを求
めることができる。尚測定は測定のし易さから４°Ｋで
行ったが室温においても同様の特性が得られる。By using the relationship between the external magnetic field H and the change ΔK in thermal conductivity, the strength of the external magnetic field can be obtained from the change in thermal conductivity. Note that the measurement was performed at 4 ° K for ease of measurement, but similar characteristics can be obtained even at room temperature.
【００２０】またこの原理を用いると磁性をもつ物体の
運動による磁界の変化から物体の運動状態をしることが
できる。例えば、直線運動している物体の速度や回転運
動している物体の回転速度または回転角等を知ることが
できる。When this principle is used, the motion state of the object can be determined from the change in the magnetic field due to the motion of the magnetic object. For example, it is possible to know the speed of a linearly moving object, the rotational speed or the rotational angle of a rotationally moving object, and the like.
【００２１】この現象を利用して磁気センサーや磁気を
利用したセンサー、あるいは磁気読取装置に適用でき
る。By utilizing this phenomenon, it can be applied to a magnetic sensor, a sensor using magnetism, or a magnetic reading device.
【００２２】[0022]
【実施例】まず、磁性人工格子の作製方法を図４（Ａ）
を用いて説明する。EXAMPLE First, a method for manufacturing a magnetic artificial lattice is shown in FIG.
Will be explained.
【００２３】基板にガラス基板１０を用い、超高真空蒸
着装置で、１０- 9 〜１０- 1 0 ｔｏｒｒの真空中で、
基板温度は室温で、基板を回転させながら、磁性人工格
子膜１を約０．３〜０．５オングストローム／秒の成膜
速度で作製した。本実施例ではＮｉＦｅ２０オングスト
ローム（Ａ）厚、Ｃｕ４０Ａ、Ｃｏ２０Ａ、Ｃｕ４０Ａ
の膜を５０界繰り返して人工格子膜を形成した。この人
工格子膜は保磁力の異なる２種類の磁性層ＮｉＦｅとＣ
ｏと、非磁性層Ｃｕからなり、保磁力の差により、Ｃｕ
を介して隣会う磁性層の磁化の向きを制御できる。[0023] The glass substrate 10 using the substrate, in ultra-high vacuum deposition apparatus, 10 - 1 in 0 torr of vacuum, - 9-10
The substrate temperature was room temperature, and the magnetic artificial lattice film 1 was formed at a film forming rate of about 0.3 to 0.5 angstrom / sec while rotating the substrate. In this embodiment, NiFe20 angstrom (A) thickness, Cu40A, Co20A, Cu40A
This film was repeated 50 times to form an artificial lattice film. This artificial lattice film consists of two types of magnetic layers, NiFe and C, which have different coercive forces.
o and a non-magnetic layer Cu. Due to the difference in coercive force, Cu
It is possible to control the magnetization direction of the adjacent magnetic layer via the.
【００２４】磁性人工格子膜としては他にＦｅ／Ｃｒ、
Ｃｏ／Ｃｕ等を用いることができる。 本発明の測定方
法を実施例を用いて説明する。Other magnetic artificial lattice films include Fe / Cr,
Co / Cu or the like can be used. The measuring method of the present invention will be described with reference to examples.
【００２５】図１は磁気媒体からの磁気信号読取装置を
示す図である。磁性人工格子膜１の形成された基板には
熱伝導率の変化を測定するためのサーモカップルゲージ
が形成されている。磁性媒体からの漏れ磁束３の変化を
熱伝導率の変化として測定することにより、磁性媒体に
記録された磁気信号を読取ることができる。FIG. 1 is a diagram showing a magnetic signal reader for reading from a magnetic medium. A thermocouple gauge for measuring a change in thermal conductivity is formed on the substrate on which the magnetic artificial lattice film 1 is formed. By measuring the change in the leakage magnetic flux 3 from the magnetic medium as the change in thermal conductivity, the magnetic signal recorded in the magnetic medium can be read.
【００２６】磁気媒体２または人工格子膜１のどちらか
を動かすと、磁気媒体に記録された信号に対応する漏れ
磁束の値が変わるのでそれを人工格子膜で熱伝導率変化
として読取、図３の特性から磁界の変化に変換し、磁気
媒体の信号を測定できる。When either the magnetic medium 2 or the artificial lattice film 1 is moved, the value of the leakage magnetic flux corresponding to the signal recorded on the magnetic medium is changed. It is possible to measure the signal of the magnetic medium by converting the characteristics of the above into the change of the magnetic field.
【００２７】図２は、本発明の別の実施例であり、回転
するシリンダー５に磁力４が１個または複数個設置され
ている。それと対向する位置に磁性人工格子膜１があ
り、人工格子膜１により回転する磁石４からの磁束変化
を熱伝導変化として読取ることができる。これにより、
磁石４の回転速度あるいは回転数、回転角度を測定でき
る。FIG. 2 shows another embodiment of the present invention in which a rotating cylinder 5 is provided with one or a plurality of magnetic forces 4. There is a magnetic artificial lattice film 1 at a position facing it, and the magnetic flux change from the magnet 4 rotating by the artificial lattice film 1 can be read as a heat conduction change. This allows
The rotation speed, the number of rotations, and the rotation angle of the magnet 4 can be measured.
【００２８】以上の実施例で示したように熱伝導率の変
化から外部磁界の強さ、あるいは運動する磁石、磁性体
の運動状態を測定することができる。As shown in the above embodiments, the strength of the external magnetic field or the moving state of the moving magnet or magnetic body can be measured from the change of the thermal conductivity.
【００２９】[0029]
【発明の効果】本発明は、以上説明した通り磁性人工格
子膜の磁気−熱伝導効果により外部磁界により熱伝導率
が変化することを利用した全く新しい高感度の磁気セン
サーの手法を提供することが出来る。As described above, the present invention provides a completely new method of highly sensitive magnetic sensor utilizing the fact that the thermal conductivity is changed by an external magnetic field due to the magnetic-heat conduction effect of the magnetic artificial lattice film. Can be done.
【図１】本発明を説明するための図。FIG. 1 is a diagram for explaining the present invention.
【図２】本発明を説明するための図。FIG. 2 is a diagram for explaining the present invention.
【図３】ＮｉＦｅ／Ｃｕ／Ｃｏ／Ｃｕからなる磁性人工
格子膜の外部磁界Ｈと熱伝導率の変化ΔΚとの関係を示
す図。FIG. 3 is a diagram showing a relationship between an external magnetic field H and a change ΔH in thermal conductivity of a magnetic artificial lattice film made of NiFe / Cu / Co / Cu.
【図４】熱伝導率の測定方法を示す図。FIG. 4 is a diagram showing a method of measuring thermal conductivity.
１ 磁性人工格子膜 ２ 磁気媒体 ３ 磁気媒体からの磁束 ４ 磁石 ５ 回転シリンダー ６ 銅ブロック ７，８ サーモカップルゲージ ９ ヒータ部 １０ 基板 １１ ＮｉＦｅ １２，１４ Ｃｕ １３ Ｃｏ 1 Magnetic Artificial Lattice Film 2 Magnetic Medium 3 Magnetic Flux from Magnetic Medium 4 Magnet 5 Rotating Cylinder 6 Copper Block 7,8 Thermocouple Gauge 9 Heater Part 10 Substrate 11 NiFe 12,14 Cu 13 Co
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｆ 41/20 Ｈ０１Ｌ 43/08 Ｚ (72)発明者 高田 利夫 京都府京都市左京区下鴨森本町15番地財団 法人 生産開発科学研究所内 (56)参考文献 特開 昭64−39012（ＪＰ，Ａ) 特開 平４−296644（ＪＰ，Ａ)─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Reference number in the agency FI Technical indication location H01F 41/20 H01L 43/08 Z (72) Inventor Toshio Takada Shimogamomorimotomachi, Sakyo-ku, Kyoto-shi, Kyoto Prefecture No. 15 within Institute of Industrial Science and Technology (56) References JP 64-39012 (JP, A) JP 4-296644 (JP, A)
Claims (2)
層し、外部磁界によって隣り合った磁性薄膜の磁化の向
きを反平行と平行に制御することが出来る磁性人工格子
膜を用いて、該磁性人工格子膜の熱伝導率変化から外部
磁界の強さを測定することを特徴とする磁性人工格子膜
を用いた測定方法。1. A non-magnetic thin film layer and a magnetic thin film layer are alternately laminated, and the directions of magnetization of adjacent magnetic thin films by an external magnetic field.
Magnetic Artificial Lattice with Controllable Antiparallel and Parallel
With a membrane, measurement method using a magnetic artificial lattice film and measuring the intensity of the external magnetic field from the thermal conductivity change of the magnetic artificial lattice film.
層し、外部磁界によって隣り合った磁性薄膜の磁化の向
きを反平行と平行に制御することが出来る磁性人工格子
を用いて、該磁性人工格子膜の熱伝導率変化から磁性を
有する物体の運動状態あるいは該物体の位置関係を測定
することを特徴とする磁性人工格子膜を用いた測定方
法。2. A non-magnetic thin film layer and a magnetic thin film layer are alternately laminated, and the directions of magnetization of adjacent magnetic thin films by an external magnetic field.
Magnetic Artificial Lattice with Controllable Antiparallel and Parallel
Is used to measure the motion state of a magnetic object or the positional relationship of the object from the change in thermal conductivity of the magnetic artificial lattice film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4241500A JPH0785102B2 (en) | 1992-09-10 | 1992-09-10 | Measuring method using magnetic artificial lattice film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4241500A JPH0785102B2 (en) | 1992-09-10 | 1992-09-10 | Measuring method using magnetic artificial lattice film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06194431A JPH06194431A (en) | 1994-07-15 |
| JPH0785102B2 true JPH0785102B2 (en) | 1995-09-13 |
Family
ID=17075255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4241500A Expired - Fee Related JPH0785102B2 (en) | 1992-09-10 | 1992-09-10 | Measuring method using magnetic artificial lattice film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0785102B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8949455B2 (en) | 2005-11-21 | 2015-02-03 | Oracle International Corporation | Path-caching mechanism to improve performance of path-related operations in a repository |
-
1992
- 1992-09-10 JP JP4241500A patent/JPH0785102B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8949455B2 (en) | 2005-11-21 | 2015-02-03 | Oracle International Corporation | Path-caching mechanism to improve performance of path-related operations in a repository |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06194431A (en) | 1994-07-15 |
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