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JPH0785451B2 - High permeability multilayer magnetic film - Google Patents
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JPH0785451B2 - High permeability multilayer magnetic film - Google Patents

High permeability multilayer magnetic film

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Publication number
JPH0785451B2
JPH0785451B2 JP59216143A JP21614384A JPH0785451B2 JP H0785451 B2 JPH0785451 B2 JP H0785451B2 JP 59216143 A JP59216143 A JP 59216143A JP 21614384 A JP21614384 A JP 21614384A JP H0785451 B2 JPH0785451 B2 JP H0785451B2
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Japan
Prior art keywords
magnetic
film
thickness
layer
intermediate layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP59216143A
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Japanese (ja)
Other versions
JPS6196510A (en
Inventor
佳弘 濱川
一夫 椎木
芳博 城石
勇 由比藤
斉 中村
登行 熊坂
茂一 大友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59216143A priority Critical patent/JPH0785451B2/en
Publication of JPS6196510A publication Critical patent/JPS6196510A/en
Priority to US07/150,504 priority patent/US4814921A/en
Publication of JPH0785451B2 publication Critical patent/JPH0785451B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Thin Magnetic Films (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、高周波領域でも高い透磁率を有し、且つ低保
磁力である磁性体膜に係り、特に、磁極形状に加工して
も高い透磁率を保ち、良好な磁気特性の得られる高透磁
率多層磁性体膜に関する。
Description: TECHNICAL FIELD The present invention relates to a magnetic film having a high magnetic permeability even in a high frequency region and a low coercive force, and in particular, a high magnetic permeability even when processed into a magnetic pole shape. The present invention relates to a high-permeability multilayer magnetic film that maintains magnetic susceptibility and obtains excellent magnetic characteristics.

〔発明の背景〕[Background of the Invention]

従来、磁性膜の高周波特性を向上するために、磁性膜を
SiO2などの非磁性中間層を介して積層する方法が知られ
ている。実際特開昭58−192311号に示されるように、従
来の多層磁性体膜、たとえばFe−Siと非磁性体であるSi
O2を中間層として積層した多層磁性体膜においては、積
層化によりFe−Si自身の結晶粒径が小さくなるので異方
性の分散が抑えられ、膜の磁気特性が向上することが知
られている。ここで、磁性膜の膜厚は、0.01〜0.2μ
m、中間層の膜厚は、1nm〜10nmが適当である。これは
数nm程度の膜圧にはピンホールがあり、このピンホール
を介してFe−Si層間で交換相互作用が働き、各層はそれ
ぞれの異方性の分散が抑えられたまま強磁性的に結合す
るために、膜全体としても磁気特性が良くなるためであ
る。一方、さらにこれらの多層磁性体膜の高周波特性を
向上するためには、高周波でのうず電流損を少なくする
必要があり、特開昭59−9905号で述べられているよう
に、上記多層膜をさらに厚い非磁性絶縁層を介して積層
するという試みもある。この場合、高周波特性を向上す
るためには、非磁性中間層の膜厚を0.05〜1μmとする
ことが望ましい。しかしながら、このような多層膜を第
8図(a)および(b)に示すような薄膜磁気ヘッドに
適用するために磁極形状パターン化すると、その10MHz
における透磁率が第11図に示すように、パターン化前の
初期膜の約1/10に低下し、良好なヘッド特性が得られな
い。
Conventionally, in order to improve the high frequency characteristics of magnetic films,
A method of laminating via a non-magnetic intermediate layer such as SiO 2 is known. In fact, as shown in Japanese Patent Laid-Open No. 58-192311, a conventional multilayer magnetic film, for example, Fe--Si and a non-magnetic Si film is used.
It is known that in a multilayer magnetic film in which O 2 is laminated as an intermediate layer, the grain size of Fe-Si itself becomes small due to lamination, so that anisotropy dispersion is suppressed and the magnetic characteristics of the film are improved. ing. Here, the thickness of the magnetic film is 0.01-0.2μ
m, the film thickness of the intermediate layer is appropriately 1 nm to 10 nm. This is because there is a pinhole in the film pressure of about several nm, and exchange interaction works between the Fe-Si layers through this pinhole, and each layer becomes ferromagnetic while the anisotropy dispersion is suppressed. This is because the magnetic properties of the entire film are improved due to the coupling. On the other hand, in order to further improve the high frequency characteristics of these multilayer magnetic films, it is necessary to reduce the eddy current loss at high frequencies, and as described in JP-A-59-9905, the above-mentioned multilayer films are disclosed. There is also an attempt to stack the layer with a thicker non-magnetic insulating layer. In this case, in order to improve the high frequency characteristics, it is desirable that the thickness of the nonmagnetic intermediate layer be 0.05 to 1 μm. However, when such a multilayer film is patterned into a magnetic pole shape so as to be applied to a thin film magnetic head as shown in FIGS.
As shown in FIG. 11, the magnetic permeability in (1) is reduced to about 1/10 of that of the initial film before patterning, and good head characteristics cannot be obtained.

〔発明の目的〕[Object of the Invention]

本発明の目的は、かかる欠点を除去した高性能な高透磁
率多層磁性体膜を提供することにある。
An object of the present invention is to provide a high-performance, high-permeability multi-layered magnetic film that eliminates such drawbacks.

〔発明の概要〕[Outline of Invention]

従来の多層磁性体膜では、各層が強磁性的に結合してい
るため、膜の厚さ方向では磁化の向きを変えることがで
きない。そのため、このような多層磁性体膜を薄膜磁気
ヘッドに適用しようとすると、磁気コア形状にパターン
化した際に、磁気コア端部での反磁界の影響を低減する
ため、面内で磁化の向きの調整がなされ、磁極部のビッ
タパターンを観察すると第10図に示すような三角状磁区
131,132を形成して磁気コア端部に自由磁極が生じない
ようになる。三角状磁区の内部では、磁気コアの磁路方
向に磁化容易軸が向いてしまうので、特に高周波で励磁
もしくは記録信号を再生しようとすると、この部分の応
答が遅く、結果的に磁極全体としての実行透磁率が低下
し、ヘッドの記録再生特性が低下していることが明らか
になった。
In the conventional multilayer magnetic film, since the layers are ferromagnetically coupled, the direction of magnetization cannot be changed in the film thickness direction. Therefore, if such a multilayer magnetic film is applied to a thin film magnetic head, the direction of magnetization in the plane is reduced in order to reduce the influence of the demagnetizing field at the magnetic core end when patterned into a magnetic core shape. Was adjusted and the bitter pattern of the magnetic pole was observed, the triangular magnetic domain as shown in Fig. 10 was observed.
By forming 131 and 132, the free magnetic pole does not occur at the end of the magnetic core. Inside the triangular domain, the easy axis of magnetization is oriented in the direction of the magnetic path of the magnetic core. Therefore, especially when trying to excite or reproduce a recording signal at a high frequency, the response of this part is slow, and as a result the entire magnetic pole is It was clarified that the effective permeability decreased and the recording / reproducing characteristics of the head deteriorated.

この現象は、磁性材料の飽和磁束密度Bsが大きい程顕著
であり、特に問題であった。
This phenomenon is more remarkable as the saturation magnetic flux density Bs of the magnetic material is larger, which is a particular problem.

本発明者らは、上記問題に対して膜構造を種々変えた実
験、論理的検討を行ない、このようにBsが大きい磁性体
から成る多層膜において、パターン化後も良好な透磁率
を有する以下の磁性膜を発明するにいたった。すなわ
ち、パターン化後の強磁性体薄膜の磁気特性を向上せし
めるために、強磁性材料を中間層を介して積層した単位
磁性膜を、さらに膜厚10〜40nmの別種の中間層を介して
積層する。2種以上の中間層の材質として、望ましくは
強磁性、非磁性、および反強磁性材料のうちの2種以上
の組み合わせとするものである。これは、単位磁性膜を
さらに第2の中間層を介して積層することで、第11図に
示すように微細パターンの加工した後でも透磁率が劣化
しないようにしたものである。従来、IEEE Trans,Mag
n.,Vol1.Mag−13,pp.1521−1523でみられるように、磁
性膜Ni−Feを厚さ10nmの中間層Cuを介して積層し、同様
の効果を得た例があった。本発明の特徴は、中間層の材
料を2種とすることであり、従来例よりも顕著な効果が
あることを確認した。
The inventors of the present invention have conducted various experiments and logical studies on the above problems with various film structures, and show that a multilayer film made of a magnetic material having a large Bs has good magnetic permeability even after patterning as described below. Invented the magnetic film of That is, in order to improve the magnetic characteristics of the patterned ferromagnetic thin film, a unit magnetic film in which ferromagnetic materials are stacked via an intermediate layer is further stacked via another intermediate layer of 10 to 40 nm in thickness. To do. The material for the two or more intermediate layers is preferably a combination of two or more of ferromagnetic, non-magnetic, and antiferromagnetic materials. This is because the unit magnetic film is further laminated via the second intermediate layer so that the magnetic permeability is not deteriorated even after the fine pattern is processed as shown in FIG. Conventionally, IEEE Trans, Mag
n., Vol1.Mag-13, pp.1521-1523, there was an example in which a magnetic film Ni-Fe was laminated with an intermediate layer Cu having a thickness of 10 nm to obtain the same effect. The feature of the present invention is that two kinds of materials are used for the intermediate layer, and it has been confirmed that there is a remarkable effect as compared with the conventional example.

第11図では、磁性材料を0.1μmの7wt%Si−Feとし、膜
厚3nmの第一の中間層として20wt%Fe−Niを介して5層
積層したものを単位磁性膜とした結果を示したが、磁性
材料としてはCo−Fe,Fe−TiあるいはCo−Zr,Co−ZrMoな
どでも良く、第1の中間層としては強磁性のNi,Fe,Co,F
e2O3,反強磁性のNiO,Mn−Feなどでも同じ効果が得られ
た。ここで、Fe−Si磁性体一層の膜厚としては、第12図
に示すように、0.01〜0.2μmより望ましくは0.04μm
〜0.12μmが好ましい。これは、磁性体膜厚が0.01μm
より薄くなると、熱応力などのため磁気特性が劣化し易
くなり、一方、逆に0.2μmよりも厚くなると結晶粒が
大きくなり、このために磁気特性が劣化してしまうため
である。また第2の中間層は、膜厚20nmのSiO2とした
が、Al2O3,Ti,Mo,Wなどとしても同様の結果が得られ
た。ここで第1の中間層の膜厚としては、第13図に一例
を示すように1〜10nm、より望ましくは2〜8nmとする
ことが望ましい。これは、1nm以下では中間層の膜質が
悪く、ピンホールを通じて結晶粒が成長し磁気特性が劣
化してしまうのに対し、10nm以上では各磁性層が単独に
磁化反転するようになるために磁気特性が劣化してしま
うためである。さらに第2の中間層の膜厚としては、第
14図に示すように10〜40nmより望ましくは15〜30nmとす
れば良い。これは、10nmよりも膜厚が薄いと、各単位磁
性層間の相互作用が強く各層状の磁化の向きが同じにな
ってしまうためにパターン化後の磁気特性が劣化してし
まうのに対し、40nmよりも厚くなると、各単位磁性膜自
身の磁気特性が厚い中間層の存在のために劣化してしま
うためである。
FIG. 11 shows the result of unit magnetic film in which the magnetic material was 0.1 μm, 7 wt% Si-Fe, and 5 layers were laminated with 20 wt% Fe-Ni as the first intermediate layer of 3 nm thickness. However, the magnetic material may be Co-Fe, Fe-Ti or Co-Zr, Co-ZrMo, and the first intermediate layer is made of ferromagnetic Ni, Fe, Co, F.
The same effect was obtained with e 2 O 3 , antiferromagnetic NiO, and Mn-Fe. Here, as shown in FIG. 12, the thickness of one layer of the Fe—Si magnetic material is preferably 0.01 to 0.2 μm, more preferably 0.04 μm.
˜0.12 μm is preferred. This is because the magnetic film thickness is 0.01 μm
This is because if the thickness is thinner, the magnetic properties are likely to deteriorate due to thermal stress and the like, and conversely, if it is thicker than 0.2 μm, the crystal grains become large, which deteriorates the magnetic properties. Further, the second intermediate layer was made of SiO 2 having a film thickness of 20 nm, but similar results were obtained when Al 2 O 3 , Ti, Mo, W, or the like was used. Here, the thickness of the first intermediate layer is preferably 1 to 10 nm, more preferably 2 to 8 nm as shown in FIG. This is because if the thickness is less than 1 nm, the quality of the intermediate layer is poor, and crystal grains grow through the pinholes, deteriorating the magnetic characteristics. This is because the characteristics deteriorate. Further, as the film thickness of the second intermediate layer,
As shown in FIG. 14, the thickness is preferably 10 to 40 nm, more preferably 15 to 30 nm. This is because when the film thickness is thinner than 10 nm, the interaction between the unit magnetic layers is strong and the magnetization directions of the respective layered layers are the same, which deteriorates the magnetic characteristics after patterning. This is because when the thickness is more than 40 nm, the magnetic characteristics of each unit magnetic film itself are deteriorated due to the existence of the thick intermediate layer.

以上のように、本多層磁性体膜においては、各単位強磁
性層間で磁化の向きが反対方向になるため、たとえ磁気
コア端部に自由磁極が生じても、その近傍に逆磁性の自
由磁極があるため静磁エネルギーの増加は極めて少な
く、第10図に示した三角状磁区131,132を形成する必要
がない。この効果は、自由磁極の補償効果を考えると、
同一膜厚であれば単位磁性膜の総数が偶数である方がよ
り著しい。いずれにせよ、その結果、上記磁性膜は磁気
コア形状に加工しても、第11図に示した様に磁気特性の
劣化は防止できることになる上記説明からわかるよう
に、パターン化による磁区構造ができやすい強磁性体材
料の飽和磁束密度が1.2T以上、さらには1.5T以上と大き
い磁性膜に対して特に有効であり、前記単位磁性膜の膜
厚が0.05〜0.9μm、さらには0.09〜0.2μmの場合に顕
著である。再現性,信頼性の点では前記強磁性体にFe−
SiあるいはFe−Si−Ruを、前記第1の中間層のNi−Fe合
金を、前記第2中間層にSiO2あるいはAl2O3を用いるこ
とがより望ましい。
As described above, in the present multilayer magnetic film, the magnetization directions are opposite to each other in each unit ferromagnetic layer, so that even if a free magnetic pole occurs at the end of the magnetic core, the free magnetic pole of the reverse magnetic field is formed in the vicinity thereof. Therefore, the increase in magnetostatic energy is extremely small, and it is not necessary to form the triangular magnetic domains 131 and 132 shown in FIG. Considering the compensation effect of the free magnetic pole, this effect is
If the film thickness is the same, it is more remarkable that the total number of unit magnetic films is even. In any case, as a result, even if the magnetic film is processed into a magnetic core shape, it is possible to prevent the deterioration of the magnetic properties as shown in FIG. It is particularly effective for a magnetic film having a large saturation magnetic flux density of 1.2 T or more, more preferably 1.5 T or more, which is easily formed, and the unit magnetic film has a thickness of 0.05 to 0.9 μm, further 0.09 to 0.2. It is remarkable in the case of μm. In terms of reproducibility and reliability, Fe-
Si or Fe-Si-Ru, a Ni-Fe alloy of the first intermediate layer, it is more preferable to use SiO 2 or Al 2 O 3 in the second intermediate layer.

以上のように、本構造の多層膜は、特に薄膜を磁極形状
にパターン化した時の磁気特性に優れており、本構造の
多層膜を使用した薄膜磁気ヘッドの特性は他の構造の薄
膜ヘッドに比べて2倍以上優れている。特に主磁極に本
多層膜を用いた薄膜ヘッドは薄膜としても磁気特性が劣
化しないので、垂直磁気記録用のヘッドとして優れてい
る。
As described above, the multilayer film of this structure is excellent in magnetic characteristics particularly when the thin film is patterned into a magnetic pole shape, and the characteristics of the thin film magnetic head using the multilayer film of this structure are different from those of other structures. 2 times more excellent than In particular, a thin film head using the present multilayer film for the main pole is excellent as a head for perpendicular magnetic recording because the magnetic characteristics do not deteriorate even if it is a thin film.

〔発明の実施例〕Example of Invention

以下、本発明の一実施例を以下に詳細に説明する。 An embodiment of the present invention will be described below in detail.

第1図には、本実施例の多層磁性体膜の多層構造の一例
を示す。本発明の多層磁性体膜は、高飽和磁束密度材か
らなる主磁性材料層11,12,13,14と、主磁性材料層11,1
2,13,14間の強磁性的結合を保つ第1の中間層15,16と、
主磁性材料層11,12,13,14間の強磁性的結合を切り離す
第2の中間層17とから構造されている。高飽和磁束密度
材料の主磁性材料としては、Fe−Si系,Fe−Ge系,Fe−Ti
系,Fe−N系,Co−Fe系,Co−Zr系,Co−Ti系,Co−Ta系合
金を使用することができる飽和磁束密度の点からFeを主
たる成分とする材料がより望ましい。第1の中間層15,1
6としては、Ni−Fe系合金,Co等の強磁性体の他に、Si
O2,Al2O3,Al,Ti,Mo等の非磁性体、Fe−Mn等の反強磁性
体を使用することができる。第2の中間層17としては、
SiO2,Al2O3,Al,Ti,Mo等の非磁性体、Fe−Mn等の反強磁
性体を使用することができる。第1表に本構造の実施例
をまとめておく。これらはスパッタリング法、蒸着法な
どで形成できる。また、非磁性の中間層としては、スパ
ッタリング装置に酸素を導入して磁性層表面を酸化する
ことによっても得られる。
FIG. 1 shows an example of the multilayer structure of the multilayer magnetic film of this embodiment. The multilayer magnetic film of the present invention comprises a main magnetic material layer 11, 12, 13, 14 made of a high saturation magnetic flux density material and a main magnetic material layer 11, 1.
The first intermediate layers 15 and 16 which maintain the ferromagnetic coupling between 2, 13 and 14,
The main magnetic material layers 11, 12, 13 and 14 are separated from each other by a second intermediate layer 17 for separating the ferromagnetic coupling. The main magnetic materials of high saturation magnetic flux density materials are Fe-Si system, Fe-Ge system, Fe-Ti system.
A material containing Fe as a main component is more preferable from the viewpoint of the saturation magnetic flux density, which can use an Al-based, Fe-N-based, Co-Fe-based, Co-Zr-based, Co-Ti-based, Co-Ta-based alloy. First middle layer 15,1
As for 6, in addition to Ni-Fe alloys, ferromagnetic materials such as Co, Si
A non-magnetic material such as O 2 , Al 2 O 3 , Al, Ti and Mo, or an antiferromagnetic material such as Fe-Mn can be used. As the second intermediate layer 17,
A non-magnetic material such as SiO 2 , Al 2 O 3 , Al, Ti, Mo or an antiferromagnetic material such as Fe-Mn can be used. Table 1 summarizes examples of this structure. These can be formed by a sputtering method, a vapor deposition method, or the like. The non-magnetic intermediate layer can also be obtained by introducing oxygen into a sputtering device to oxidize the surface of the magnetic layer.

主磁性材料層11,12,13,14の膜厚はこれに限らず、小さ
い結晶粒径の得られる0.01μm〜0.2μm、より好まし
くは0.04μm〜0.12μmとするのが良い。第1の中間層
15,16の膜厚は既に述べたように、それを介して形成さ
れる磁性膜の強磁性的結合を保つように1〜10nmより好
ましくは2〜8nmと薄くすることが望ましい。また、第
1の中間層15,16として非磁性膜を使用する場合は、磁
性膜を使用する場合よりもその膜厚を薄くする事あ望ま
しい。第2の中間層17の膜厚は、それを介して形成され
る磁性膜の強磁性的結合を切り離すように、10nm〜40n
m、より望ましくは、15nm〜30nmと、第1の中間層15,16
よりも厚くすることがより望ましい。磁性膜 と第1の中間層15,16を積層してなる単位磁性膜の厚さ
は、それを厚くしすぎると、反磁場の影響が現われるの
で、0.05〜0.9μmより好ましくは、0.09〜0.2μmとす
ることが望ましい。
The thickness of the main magnetic material layers 11, 12, 13, and 14 is not limited to this, and is 0.01 μm to 0.2 μm, and more preferably 0.04 μm to 0.12 μm, which gives a small crystal grain size. First middle layer
As described above, it is desirable that the film thicknesses of 15 and 16 be as thin as 1 to 10 nm, preferably 2 to 8 nm so as to maintain the ferromagnetic coupling of the magnetic film formed therethrough. Further, when a non-magnetic film is used as the first intermediate layers 15 and 16, it is desirable to make the film thickness thinner than when a magnetic film is used. The thickness of the second intermediate layer 17 is 10 nm to 40 n so that the ferromagnetic coupling of the magnetic film formed therethrough is cut off.
m, more preferably 15 nm to 30 nm and the first intermediate layer 15, 16
It is more desirable to be thicker than this. Magnetic film The thickness of the unit magnetic film formed by laminating the first intermediate layer 15 and the first intermediate layer 15 and 16 is more than 0.05 to 0.9 μm, more preferably 0.09 to 0.2 μm because the effect of a demagnetizing field appears when the thickness is made too thick. It is desirable to do.

以下、本構造の多層膜を用いて作製した薄膜ヘッドの実
施例を詳細に述べる。
Examples of the thin film head manufactured by using the multilayer film of this structure will be described in detail below.

主材料となる高飽和磁束密度材料として、飽和磁束密度
が1.7TのFe−6.5wt%Si−1wt%Ru合金、Fe−6.5wt%−1
wt%Ru合金層間を強磁性的に結合させる中間層として
は、Ni−20wt%Fe、強磁性層間の強磁性的結合を切り離
する非磁性層としてはSiO2を用いた。Fe−6.5wt%Si−1
wt%Ru合金の一層の厚みを0.05μmと一定とし、Ni−20
wt%Fe合金の厚みは5nmとし、SiO2の1層の厚みを0,5,1
0,20,50,90,100,150nmとして、第1図に示す多層構造を
もつ多層磁性体膜を形成し、第4図に示す薄膜ヘッドを
試作した。ここで51はAl2O5,TiC,Al2O3,ZrO3などの非磁
性基板、52は前記多層膜、53はAl2O3,SiO2などから成る
ギャップ層、54はCu,Alなどからなるコイル、55はポリ
イミド系樹脂,SiO2などからなる絶縁層、56はCoZrW,CoZ
r,Ni−Feなどからなる磁性層である。なお、Fe−Si−Ru
合金、Ni−Fe合金、SiO2などは高周波スパッタ法により
形成した。中間層SiO2の膜厚が0.5nmの場合には、SiO2
中間層の効果はほとんどなく、パターニング後の磁性膜
の10MHzにおける透磁率は200程度と低い。この時の磁区
構造を観察すると第2図に示すように極めて大きな三角
状磁区31が形成されていた。SiO2中間層の膜厚が10nm以
上ではSiO2の効果があり、透磁率が1000〜1500程度とな
っていた。この時の磁区構造を観察すると、第3図に示
すように三角状磁区がほとんど形成されていなかった。
Fe-6.5wt% Si-1wt% Ru alloy with saturation flux density of 1.7T, Fe-6.5wt% -1
Ni-20 wt% Fe was used as the intermediate layer for ferromagnetically coupling the wt% Ru alloy layers, and SiO 2 was used as the nonmagnetic layer for separating the ferromagnetic coupling between the ferromagnetic layers. Fe-6.5wt% Si-1
The thickness of one layer of the wt% Ru alloy is kept constant at 0.05 μm, and Ni-20
The thickness of the wt% Fe alloy is 5 nm, and the thickness of one layer of SiO 2 is 0, 5, 1
A multilayer magnetic film having a multilayer structure shown in FIG. 1 was formed with a thickness of 0, 20, 50, 90, 100, and 150 nm, and a thin film head shown in FIG. Here, 51 is a non-magnetic substrate such as Al 2 O 5 , TiC, Al 2 O 3 and ZrO 3 , 52 is the multilayer film, 53 is a gap layer composed of Al 2 O 3 and SiO 2 , and 54 is Cu and Al. Coil made of etc., 55 is an insulating layer made of polyimide resin, SiO 2 etc., 56 is CoZrW, CoZ
It is a magnetic layer made of r, Ni-Fe, or the like. Note that Fe-Si-Ru
Alloy, Ni-Fe alloy, such as SiO 2 was formed by RF sputtering. If the thickness of the intermediate layer SiO 2 is 0.5 nm, the SiO 2
There is almost no effect of the intermediate layer, and the magnetic permeability of the patterned magnetic film at 10 MHz is as low as about 200. Observation of the magnetic domain structure at this time revealed that extremely large triangular magnetic domains 31 were formed as shown in FIG. When the thickness of the SiO 2 intermediate layer was 10 nm or more, the effect of SiO 2 was exerted, and the magnetic permeability was about 1000 to 1500. Observation of the magnetic domain structure at this time revealed that almost no triangular magnetic domains were formed as shown in FIG.

SiO2中間層の膜厚を大きくしすぎると、初期膜の磁気特
性が劣化するとともに、パターニング後の透磁率も減少
してくる。第5図に、飽和磁化Ms300emu/cc,保磁力H
c⊥500Oe,膜厚tm0.2μmのCo−Cr垂直磁化層を膜厚0.7
μmのCo−Zr−Mo軟磁性層上に形成した2層膜媒体を用
いて評価した本ヘッドの再生出力を示す。SiO2中間層の
膜厚は、10nmから40nmの間で良好な特性が得られること
がわかった。
If the film thickness of the SiO 2 intermediate layer is too large, the magnetic properties of the initial film deteriorate and the magnetic permeability after patterning also decreases. Fig. 5 shows saturation magnetization Ms300emu / cc, coercive force H
c ⊥ 500 Oe, film thickness t m 0.2 μm Co-Cr perpendicular magnetic layer 0.7
The reproducing output of this head evaluated by using a two-layer film medium formed on a Co-Zr-Mo soft magnetic layer of μm is shown. It was found that good characteristics were obtained when the thickness of the SiO 2 intermediate layer was 10 nm to 40 nm.

第6図は、上述した本発明の多層磁性体膜を用いた別の
薄膜磁気ヘッドの実施例を示す。71は、強磁性基板、75
は第1図に示した多層磁性体膜を用いた主磁極、72,74
はSiO2,Al2O3などからなる絶縁層であり、73はAl,Cuな
どよりなる導体コイルである。第8図には、多層磁性体
膜75の先端膜厚を0.02,0.035,0.05,0.1,0.3,0.6,1,2,5,
10μmと変えた場合の記録密度特性を、Msを800emu/cc,
Hc⊥を700Oe,tmを0.3μmとしたCo−Cr媒体と膜厚0.9
μmのCoZrMo高透磁率下地層とで構成した2層膜媒体を
用いて評価した結果を示す。これから、記録密度特性を
伸ばすには、前膜厚が0.035〜1μm、望ましくは0.05
〜0.5μm、さらにより望ましくは0.1〜0.4μmである
ことがわかる。またこの場合、主磁極の磁気飽和を防ぐ
ために、飽和磁束密度は1.2T以上、より望ましくは1.5T
以上あることが望ましい。本発明の多層膜は、主磁極形
状に加工後も約1500の透磁率(10MHz)を持ち、これを
用いることで極めて再性感度のすぐれた薄膜磁気ヘッド
が得られるようになった。
FIG. 6 shows an embodiment of another thin film magnetic head using the above-mentioned multilayer magnetic film of the present invention. 71 is a ferromagnetic substrate, 75
Is a main pole using the multilayer magnetic film shown in FIG. 1, 72,74
Is an insulating layer made of SiO 2 , Al 2 O 3 or the like, and 73 is a conductor coil made of Al, Cu or the like. In FIG. 8, the tip thickness of the multilayer magnetic film 75 is 0.02,0.035,0.05,0.1,0.3,0.6,1,2,5,
Recording density characteristics when changing to 10 μm, Ms is 800 emu / cc,
Co-Cr medium with H c ⊥ of 700 Oe and t m of 0.3 μm and film thickness of 0.9
The results of evaluation using a two-layer film medium composed of a CoZrMo high-permeability underlayer of μm are shown. From this, in order to extend the recording density characteristics, the previous film thickness is 0.035 to 1 μm, preferably 0.05.
It can be seen that the thickness is ˜0.5 μm, and more preferably 0.1 to 0.4 μm. In this case, in order to prevent magnetic saturation of the main pole, the saturation magnetic flux density is 1.2T or more, more preferably 1.5T.
It is desirable to have more than one. The multilayer film of the present invention has a magnetic permeability (10 MHz) of about 1500 even after being processed into a main magnetic pole shape, and by using this, a thin film magnetic head with extremely excellent reproducibility can be obtained.

〔発明の効果〕〔The invention's effect〕

本発明では、磁気ヘッドの磁極形状に加工しても、10MH
zの高周波領域で約1500の高透磁率を有し、高飽和磁束
密度の磁性膜を得ることができ、これをコア材料として
薄膜磁気ヘッドに用いると、ヘッド性能を著しく高める
ことができる。
In the present invention, even if the magnetic pole shape of the magnetic head is processed,
A magnetic film having a high magnetic permeability of about 1500 in the high frequency range of z and a high saturation magnetic flux density can be obtained. When this is used as a core material for a thin film magnetic head, the head performance can be remarkably enhanced.

【図面の簡単な説明】[Brief description of drawings]

第1図は、本発明多層膜の多層構造例を示す断面図,第
2図および第3図は、磁気コアに発生する磁区模様図,
第4図は、本発明の多層磁性体膜を用いて作製した薄膜
磁気ヘッドを説明するための断面図、第5図は、本発明
の多層磁性体膜を薄膜磁気ヘッドに適用した場合に、ヘ
ッド再生出力の中間層SiO2膜厚依存性を示す図,第6図
は、本発明の多層磁性体膜を用いて作製した他の薄膜磁
気ヘッドを説明するための断面図,第7図は、第6図に
示した磁気ヘッドの記録密度の磁極先端膜厚依存性を示
す図,第8図は、本発明の適用例である薄膜磁気ヘッド
を説明するための図で、特に第8図(a)は断面図、第
8図(b)は上面図,第9図は、従来例の多層磁性体膜
を磁極コア形状にパターン化した後の透磁率と、磁極コ
アのトラック幅との関係を示した図,第10図は、従来の
多層磁性体膜を、磁極形状にパターン化した時にあらわ
れる磁区模様図、第11図は、本発明の多層磁性体膜を磁
極形状にパターン化した後の透磁率を従来例と比較した
図,第12図は、本発明の多層磁性体膜において、その透
磁率の主磁性層膜厚依存性を示す図,第13図は、本発明
の多層磁性体膜において、その透磁率の第1中間層膜厚
依存性を示す図,第14図は、本発明の透磁率と、第2中
間層膜厚との関係を示す図である。 51……非磁性基板,52……主磁極,53……ギャップ層,54
……導体コイル,55……絶縁層,56……補助磁極,71……
強磁性基板,72……ギャップ層,73……導体コイル,74…
…絶縁層,75……主磁極,111……非磁性基板,112……下
部磁性層,113……上部磁性層,114……導体コイル,115…
…ギャップ層。
FIG. 1 is a cross-sectional view showing an example of a multilayer structure of the multilayer film of the present invention, FIGS. 2 and 3 are magnetic domain pattern diagrams generated in a magnetic core,
FIG. 4 is a cross-sectional view for explaining a thin film magnetic head manufactured using the multilayer magnetic film of the present invention, and FIG. 5 is a cross-sectional view when the multilayer magnetic film of the present invention is applied to the thin film magnetic head. FIG. 6 is a diagram showing the dependency of the head reproduction output on the thickness of the intermediate layer SiO 2 , and FIG. 6 is a cross-sectional view for explaining another thin film magnetic head manufactured by using the multilayer magnetic film of the present invention. FIG. 8 is a diagram showing the dependence of the recording density of the magnetic head shown in FIG. 6 on the film thickness of the magnetic pole tip, and FIG. 8 is a diagram for explaining a thin film magnetic head as an application example of the present invention. 8A is a cross-sectional view, FIG. 8B is a top view, and FIG. 9 is a diagram showing a magnetic permeability after patterning a conventional multilayer magnetic film into a magnetic pole core shape and a track width of the magnetic pole core. Fig. 10 shows the relationship, Fig. 10 is a magnetic domain pattern diagram that appears when a conventional multilayer magnetic film is patterned into a magnetic pole shape, FIG. 11 is a diagram comparing magnetic permeability after patterning the multilayer magnetic film of the present invention into a magnetic pole shape, and FIG. 12 is a main magnetic field of the magnetic permeability of the multilayer magnetic film of the present invention. FIG. 13 is a diagram showing the layer thickness dependency, FIG. 13 is a diagram showing the first intermediate layer thickness dependency of the magnetic permeability of the multilayer magnetic film of the present invention, and FIG. 14 is the magnetic permeability of the present invention. FIG. 5 is a diagram showing a relationship with the second intermediate layer film thickness. 51 …… Non-magnetic substrate, 52 …… Main pole, 53 …… Gap layer, 54
...... Conductor coil, 55 …… Insulation layer, 56 …… Auxiliary pole, 71 ……
Ferromagnetic substrate, 72 ... Gap layer, 73 ... Conductor coil, 74 ...
… Insulating layer, 75… Main pole, 111… Non-magnetic substrate, 112… Lower magnetic layer, 113… Upper magnetic layer, 114… Conductor coil, 115…
… Gap layer.

フロントページの続き (72)発明者 由比藤 勇 東京都国分寺市東恋ヶ窪1丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 中村 斉 東京都国分寺市東恋ヶ窪1丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 熊坂 登行 東京都国分寺市東恋ヶ窪1丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 大友 茂一 東京都国分寺市東恋ヶ窪1丁目280番地 株式会社日立製作所中央研究所内 (56)参考文献 特開 昭59−157826(JP,A) 特開 昭53−33398(JP,A) 特開 昭59−61104(JP,A) 特開 昭58−192311(JP,A) 特開 昭60−189906(JP,A) 特開 昭60−117606(JP,A)Front page continuation (72) Inventor Isamu Yubito 1-280, Higashi Koigakubo, Kokubunji, Tokyo Inside Hitachi Central Research Laboratory (72) Inventor Hitoshi Nakamura 1-280, Higashi Koigakubo, Kokubunji, Tokyo Hitachi Central Research Co., Ltd. In-house (72) Climbing Kumasaka, Inventor 1-280 Higashi Koigakubo, Kokubunji, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Inventor Shigeichi Otomo 1-280 Higashi Koigakubo, Kokubunji, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (56 ) Reference JP 59-157826 (JP, A) JP 53-33398 (JP, A) JP 59-61104 (JP, A) JP 58-192311 (JP, A) JP 60-189906 (JP, A) JP-A-60-117606 (JP, A)

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】飽和磁束密度1.2T以上の材料からなる厚さ
0.01〜0.2μmの強磁性体層を、前記強磁性体層とは別
種の強磁性体層、非磁性体層または反強磁性体層からな
る厚さ1〜10nmの第1の中間層を介して上下に積層し
て、厚さ0.05〜0.9μmの単位磁性膜を形成し、該単位
磁性膜を厚さ10〜40nmの非磁性体層または反強磁性体層
からなる第1の中間層とは別種の第2の中間層を介して
上下に積層してなる高透磁率多層磁性体膜。
1. A thickness made of a material having a saturation magnetic flux density of 1.2 T or more.
The ferromagnetic layer having a thickness of 0.01 to 0.2 μm is provided through a first intermediate layer having a thickness of 1 to 10 nm, which is made of a ferromagnetic layer, a nonmagnetic layer or an antiferromagnetic layer different from the ferromagnetic layer. To form a unit magnetic film having a thickness of 0.05 to 0.9 μm, the unit magnetic film having a thickness of 10 to 40 nm as a first intermediate layer composed of a nonmagnetic layer or an antiferromagnetic layer. Is a high-permeability multilayer magnetic film formed by vertically stacking another kind of second intermediate layer.
【請求項2】前記強磁性体層の厚さを0.04〜0.12μm、
前記中間薄層の厚さを2〜8nm、前記単位磁性膜の厚さ
を0.09〜0.2μm、前記中間層の厚さを15〜30nmとした
特許請求の範囲第1項記載の高透磁率多層磁性体膜。
2. The thickness of the ferromagnetic layer is 0.04 to 0.12 μm,
The high-permeability multilayer according to claim 1, wherein the thickness of the intermediate thin layer is 2 to 8 nm, the thickness of the unit magnetic film is 0.09 to 0.2 μm, and the thickness of the intermediate layer is 15 to 30 nm. Magnetic film.
【請求項3】前記中間薄層を強磁性体、前記中間層を非
磁性体とした特許請求の範囲第1項または第2項記載の
高透磁率多層磁性体膜。
3. The high magnetic permeability multilayer magnetic film according to claim 1 or 2, wherein the intermediate thin layer is made of a ferromagnetic material and the intermediate layer is made of a non-magnetic material.
【請求項4】前記単位磁性膜を偶数有する特許請求の範
囲第1項乃至第3項のうちいずれかに記載の高透磁率多
層磁性体膜。
4. The high-permeability multilayer magnetic film according to claim 1, further comprising an even number of the unit magnetic films.
JP59216143A 1984-10-17 1984-10-17 High permeability multilayer magnetic film Expired - Lifetime JPH0785451B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59216143A JPH0785451B2 (en) 1984-10-17 1984-10-17 High permeability multilayer magnetic film
US07/150,504 US4814921A (en) 1984-10-17 1988-02-01 Multilayered magnetic films and thin-film magnetic heads using the same as a pole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59216143A JPH0785451B2 (en) 1984-10-17 1984-10-17 High permeability multilayer magnetic film

Publications (2)

Publication Number Publication Date
JPS6196510A JPS6196510A (en) 1986-05-15
JPH0785451B2 true JPH0785451B2 (en) 1995-09-13

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Country Link
JP (1) JPH0785451B2 (en)

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JP2001244279A (en) 2000-02-25 2001-09-07 Nec Niigata Ltd Method and apparatus for feed of board as well as chip feeder and chip mounting machine

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JPS5333398A (en) * 1976-09-09 1978-03-29 Fujitsu Ltd Permalloy film for babble element
JPS58192311A (en) * 1982-05-07 1983-11-09 Hitachi Ltd Laminated magnetic film
JPS5961104A (en) * 1982-09-30 1984-04-07 Seiko Epson Corp Method for manufacturing multilayer soft magnetic film
JPS59157826A (en) * 1983-02-26 1984-09-07 Dainippon Printing Co Ltd Method for manufacturing magnetic recording media
JPS60117606A (en) * 1983-11-30 1985-06-25 Hitachi Ltd Multilayer permalloy film
JPS60189906A (en) * 1984-03-12 1985-09-27 Toshiba Corp Ferromagnetic thin-film

Also Published As

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