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JPH0787069B2 - Electron tube cathode - Google Patents
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JPH0787069B2 - Electron tube cathode - Google Patents

Electron tube cathode

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Publication number
JPH0787069B2
JPH0787069B2 JP14182987A JP14182987A JPH0787069B2 JP H0787069 B2 JPH0787069 B2 JP H0787069B2 JP 14182987 A JP14182987 A JP 14182987A JP 14182987 A JP14182987 A JP 14182987A JP H0787069 B2 JPH0787069 B2 JP H0787069B2
Authority
JP
Japan
Prior art keywords
electron
cathode
electron tube
base metal
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP14182987A
Other languages
Japanese (ja)
Other versions
JPS63307636A (en
Inventor
豊一 鎌田
金治郎 佐野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14182987A priority Critical patent/JPH0787069B2/en
Publication of JPS63307636A publication Critical patent/JPS63307636A/en
Publication of JPH0787069B2 publication Critical patent/JPH0787069B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、受像管などの電子管に用いられる電子管陰極
に関するもので、陰極から放出される電子の放射特性の
向上が図られたものである。
Description: TECHNICAL FIELD The present invention relates to an electron tube cathode used in an electron tube such as a picture tube, and has an improved emission characteristic of electrons emitted from the cathode. .

[従来の技術] 従来、受像管などに用いられる電子管陰極には、ニッケ
ル(Ni)を主成分としてマグネシウム(Mg)、シリコン
(Si)などを還元剤として微量含有させた基体金属上
に、バリウム(Ba)を含むアルカリ土類金属の酸化物層
を被着形成したいわゆる酸化物陰極が多用されている。
[Prior Art] Conventionally, an electron tube cathode used in a picture tube or the like has barium on a base metal containing nickel (Ni) as a main component and a small amount of magnesium (Mg), silicon (Si), etc. as a reducing agent. A so-called oxide cathode, which is formed by depositing an oxide layer of an alkaline earth metal containing (Ba), is often used.

この酸化物陰極はアルカリ土類金属の炭酸塩を熱分解し
て酸化物に変換せしめたもので、のちに還元剤と酸化物
とを反応させて酸化物から遊離原子を生成させ、この遊
離原子から電子を放射せしめるようにしたものである。
This oxide cathode is obtained by thermally decomposing an alkaline earth metal carbonate and converting it into an oxide.After that, a reducing agent is reacted with an oxide to generate a free atom from the oxide. It is designed to emit electrons from.

このような手順を経る理由は、Baは電子放射能力に優れ
ているが、非常に活性であるために空気中の水分と反応
して水酸化バリウム(Ba(OH)2)になりやすく、このB
a(OH)2から遊離Baを電子管内で生成させることが困難
であるので、化学的に安定である炭酸塩を出発物質にせ
ざるをえないからである。
The reason for going through such a procedure is that Ba has excellent electron emission ability, but it is very active and easily reacts with moisture in the air to form barium hydroxide (Ba (OH) 2 ). B
This is because it is difficult to generate free Ba from a (OH) 2 in an electron tube, and therefore a chemically stable carbonate must be used as a starting material.

前記炭酸塩には炭酸バリウム(BaCO3)のごとき単元の
ものと(Ba,Sr,Ca)CO3などのごとき複元のものとがあ
るが、活性化してドナーを形成する基本的な機構は同じ
であるから、理解を容易にするために単元炭酸塩を例に
とって詳細に説明する。
There are two types of carbonates, one such as barium carbonate (BaCO 3 ) and the other such as (Ba, Sr, Ca) CO 3 , but the basic mechanism of activation to form a donor is Since they are the same, a unitary carbonate will be described in detail for ease of understanding.

第4図は従来の電子管陰極の一例を示す概略断面図であ
って、基体金属(12)からなる陰極帽体と筒(2)とで
構成される陰極筒の内部にはヒーター(3)が配備され
加熱昇温される構造になっており、基体金属(12)の表
面には酸化バリウム(BaO)からなる電子放射物質層(1
3)が形成されている。
FIG. 4 is a schematic cross-sectional view showing an example of a conventional electron tube cathode, in which a heater (3) is provided inside a cathode tube composed of a cathode cap body made of a base metal (12) and a tube (2). It has a structure in which it is placed and heated and heated. On the surface of the base metal (12), an electron emitting material layer (1) made of barium oxide (BaO) is formed.
3) has been formed.

この電子放射物質層(13)は、つぎのような工程によっ
て形成される。すなわち、有機溶剤に溶解したニトロセ
ルロースなどの樹脂溶液にBaCO3を混合せしめたのち、
吹き付け、電着、塗布などの方法で基体金属(12)上に
被着形成させる。
The electron emitting material layer (13) is formed by the following steps. That is, after mixing BaCO 3 in a resin solution such as nitrocellulose dissolved in an organic solvent,
It is deposited on the base metal (12) by a method such as spraying, electrodeposition or coating.

このようにして形成された陰極は、ついで電子管内に組
込まれ、電子管内を真空にするための排気工程でヒータ
ー(3)によって約1000℃に加熱昇温せしめられ、BaCO
3は次式で示されるように熱分解せしめられ、BaOに変換
せしめられる。
The cathode thus formed is then incorporated into an electron tube and heated to about 1000 ° C. by a heater (3) in an evacuation process for evacuating the inside of the electron tube.
3 is pyrolyzed as shown by the following equation and converted to BaO.

BaCO3→BaO+CO2 (I) この反応によって生成した炭酸ガス(CO2)は、ニトロ
セルロースの熱分解によって生じた気体とともに電子管
外に排出される。
BaCO 3 → BaO + CO 2 (I) Carbon dioxide gas (CO 2 ) generated by this reaction is discharged outside the electron tube together with the gas generated by the thermal decomposition of nitrocellulose.

しかしこの方法では式(I)で示される反応の際に、下
記式(II)や式(III)や式(IV)で示される反応が同
時におこり、還元反応の重要な役割を担う還元剤のSiや
Mgが酸化されてしまうという欠点があるうえ、基体金属
(12)の表面のNiも酸化されてしまうという欠点があ
る。
However, in this method, the reactions represented by the following formulas (II), (III) and (IV) occur at the same time during the reaction represented by the formula (I), and the reducing agent which plays an important role in the reduction reaction Si and
In addition to the drawback that Mg is oxidized, Ni on the surface of the base metal (12) is also oxidized.

CO2+2Ni→2Ni0+C (II) CO2+Si →SiO2+C (III) CO2+2Mg→2Mg0+C (IV) 第5図は基体金属(12)と電子放射物質層(13)との界
面(11)近傍を詳細に説明するための、該界面近傍の断
面の一部を拡大した模式図である。一般に電子放射物質
層(13)を構成するBaOは棒状の微小な結晶(8)が凝
集して数μm〜数十μmの大きさの結晶粒(9)とな
る。電子放射物質層(13)を構成する結晶粒(9)間に
は適度の隙間(10)があり、多孔質となっている。この
BaOは基体金属(12)と接触する界面(11)において、
前記還元剤のSiやMgと反応し、遊離のBaが生成する。こ
れらの還元剤は基体金属(12)のNiの結晶粒(14)の間
の結晶粒界(7)を拡散移動し、界面(11)近傍でつぎ
のような還元反応がおこる。
CO 2 + 2Ni → 2Ni0 + C (II) CO 2 + Si → SiO 2 + C (III) CO 2 + 2Mg → 2Mg0 + C (IV) Figure 5 shows the vicinity of the interface (11) between the base metal (12) and the electron emitting material layer (13). FIG. 3 is an enlarged schematic view of a part of a cross section near the interface for explaining in detail. In general, BaO forming the electron emitting material layer (13) is formed by agglomeration of rod-shaped minute crystals (8) to form crystal grains (9) having a size of several μm to several tens of μm. There is a proper gap (10) between the crystal grains (9) forming the electron-emitting substance layer (13), and it is porous. this
At the interface (11) where BaO contacts the base metal (12),
It reacts with the reducing agent Si or Mg to generate free Ba. These reducing agents diffuse and move in the crystal grain boundaries (7) between the Ni crystal grains (14) of the base metal (12), and the following reduction reaction occurs near the interface (11).

2BaO+Si→2Ba+Si02 (V) BaO +Ni→Ba+Ni0 (VI) この遊離Baが電子放射のドナーとして作用し、同時にSi
も消耗される。
2BaO + Si → 2Ba + Si0 2 (V) BaO + Ni → Ba + Ni0 (VI) This free Ba acts as a donor of electron emission, and at the same time Si
Is also exhausted.

また、この際式(VII): Si02+2BaO→Ba2SiO4 (VII) で示される反応もおこる。At this time, a reaction represented by the formula (VII): Si0 2 + 2BaO → Ba 2 SiO 4 (VII) also occurs.

以上のようにドナーとして作用する遊離Baは電子放射物
質層(13)と基体金属(12)との界面(11)で生成し、
電子放射物質層(13)の隙間(10)を移動し、その表面
に出て電子放射するという役割を担うが、該ドナーは蒸
発したり、電子管内に残留するCO、CO2、O2、H2Oなどの
ガスと反応して消滅したりするので、絶えず上記のよう
な反応を行なわせてドナーを補給する必要があり、陰極
では作動中常にこの還元反応が行なわれている必要があ
る。この補給と消滅とのバランスをとるため、この種の
陰極は一般に約800℃の高温で使用される。
As described above, free Ba acting as a donor is generated at the interface (11) between the electron-emitting substance layer (13) and the base metal (12),
It moves through the gap (10) of the electron-emitting substance layer (13), and plays a role of emitting to the surface and emitting electrons, but the donor evaporates, and CO, CO 2 , O 2 , which remain in the electron tube, Since it reacts with gas such as H 2 O and disappears, it is necessary to constantly perform the above reaction to replenish the donor, and at the cathode, this reduction reaction must be performed at all times. . To balance this replenishment and extinction, this type of cathode is typically used at elevated temperatures of about 800 ° C.

しかしながら、陰極の作動中に式(V)または式(VI
I)に示されるSi02、Ba2SiO4などの反応生成物(15)が
電子放射物質層(13)と基体金属(12)との接合面であ
る界面(11)において生成するので、この反応生成物
(15)が界面付近にどんどん蓄積して結晶粒界(7)を
移動するSiなどの障壁(一般に、これを中間層という)
となり、反応は次第に遅くなり、ドナーであるBaの生成
が困難となる。また、この中間層が高抵抗値を有し、放
射電子電流の流れを妨げるという問題も生じる。
However, the formula (V) or formula (VI
Since reaction products (15) such as SiO 2 and Ba 2 SiO 4 shown in I) are generated at the interface (11) which is the bonding surface between the electron emitting material layer (13) and the base metal (12), Barriers such as Si that the reaction products (15) accumulate in the vicinity of the interface and move through the grain boundaries (7) (generally referred to as the intermediate layer)
Then, the reaction becomes slower and it becomes difficult to produce Ba as a donor. Further, there is a problem that this intermediate layer has a high resistance value and hinders the flow of the emitted electron current.

[発明が解決しようとする問題点] このように、従来の電子管陰極においては、電子放射源
のドナーを形成するための炭酸塩の分解や還元反応中に
還元剤の酸化と反応生成物の蓄積がおこり、また動作中
に基体金属(12)と電子放射物質層(13)の界面(11)
近傍、とくに基体金属(12)表面近傍のNiの結晶粒界
(7)に反応生成物(15)が蓄積されるので還元剤であ
るSiの含有量に制限があり、高電流密度下の充分な電子
放射特性が長時間にわたってえられないという問題があ
る。
[Problems to be Solved by the Invention] Thus, in the conventional electron tube cathode, oxidation of the reducing agent and accumulation of reaction products during decomposition or reduction reaction of the carbonate to form the donor of the electron emission source. And the interface (11) between the base metal (12) and the electron emitting material layer (13) during operation.
Since the reaction product (15) accumulates in the vicinity, especially in the Ni crystal grain boundaries (7) near the surface of the base metal (12), the content of Si, which is the reducing agent, is limited, and it is sufficient under high current density. There is a problem that excellent electron emission characteristics cannot be obtained for a long time.

本発明は上記のような問題点を解消するためになされた
もので、アルカリ土類金属酸化物と三酸化スカンジウム
(Sc2O3)とからなる混合電子放射物質層を設けて基体
金属と該混合電子放射物質層との界面近傍に、酸化反応
や還元反応による複合酸化物からなる反応生成物が集中
して形成されることを防止し、さらに基体金属中のSi含
有量を増加させて、長時間にわたって安定した電子放射
特性がえられる電子管陰極をうることを目的とする。
The present invention has been made in order to solve the above problems, and provides a mixed electron emitting material layer composed of an alkaline earth metal oxide and scandium trioxide (Sc 2 O 3 ) to form a base metal and In the vicinity of the interface with the mixed electron emitting material layer, it is possible to prevent the reaction product composed of a complex oxide due to the oxidation reaction or the reduction reaction from being concentrated, and further increase the Si content in the base metal, The purpose is to obtain an electron tube cathode which can obtain stable electron emission characteristics for a long time.

[問題点を解決するための手段] 本発明はNiを主成分とし、少なくともSiを0.1〜10.0%
(重量%、以下同様)含有した陰極基体金属の表面に、
アルカリ土類金属酸化物とSc2O3とからなる混合電子放
射物質層が形成されてなる電子管陰極に関する。
[Means for Solving Problems] The present invention contains Ni as a main component and contains at least 0.1 to 10.0% of Si.
(Wt%, the same applies below) On the surface of the contained cathode substrate metal,
The present invention relates to an electron tube cathode having a mixed electron emitting material layer formed of an alkaline earth metal oxide and Sc 2 O 3 .

[作用] 本発明におけるSc2O3が、アルカリ土類金属の炭酸塩が
分解して酸化物に変換する際、またはこの酸化物(BaO
など)が還元反応によって解離する際に基体金属の酸化
反応を防止するとともに、還元剤の複合酸化物からなる
中間層が基体金属と混合電子放射物質層との界面近傍に
集中して形成されることを防止し、さらに基体金属中に
は高濃度のSiが含有されており、充分な供給源を有して
いるので電子管陰極が長寿命となる。
[Operation] When Sc 2 O 3 in the present invention decomposes an alkaline earth metal carbonate and converts it into an oxide, or this oxide (BaO
Prevents the oxidation reaction of the base metal when it dissociates by a reduction reaction, and an intermediate layer composed of a complex oxide of a reducing agent is formed in the vicinity of the interface between the base metal and the mixed electron emission material layer. In addition, since the base metal contains a high concentration of Si and has a sufficient supply source, the electron tube cathode has a long life.

[実施例] 本発明の一実施例を第1図および第2図に基づいて説明
する。
[Embodiment] An embodiment of the present invention will be described with reference to FIGS. 1 and 2.

第1図は、本発明の電子管陰極の一実施例を示す概略断
面図であって、基体金属(1)からなる陰極帽体と筒
(2)とで構成される陰極筒の内部にはヒーター(3)
が配備され、加熱昇温される構成となっている。陰極帽
体の表面には混合電子放射物質層(5)が被着形成され
ている。
FIG. 1 is a schematic cross-sectional view showing an embodiment of the electron tube cathode of the present invention, in which a heater is provided inside a cathode tube composed of a cathode cap body made of a base metal (1) and a tube (2). (3)
Is installed and is configured to heat and raise the temperature. A mixed electron emitting material layer (5) is deposited on the surface of the cathode cap body.

本発明に用いられる基体金属としては、Niを主成分と
し、少なくともSiを0.1〜10.0%含有したもので、陰極
基体金属として用いることができるものが使用されう
る。陰極基体金属の具体例としては、たとえばSiとMgを
含有し、要すればW、Zrなどを含有したNiがあげられ
る。かかるSiの含有率は基体金属中0.1〜10.0%である
が、さらに0.1〜5.0%、とくに0.1〜1.0%であるのが好
ましい。該含有率が0.1未満のばあいには、前記式
(V)で示される反応が陰極作動中常に連続して行なわ
れるため、Siは短時間で消耗されてしまい、とくに高電
流密度で作動させたばあいには、さらに短時間で消耗さ
れてしまう。また10.0%をこえると、基体金属材料の延
性が損われ、陰極帽体のプレス加工性がわるくなって実
用的でない。なお、従来の電子管陰極では、通常基体金
属中のSi含有率は0.02〜0.06%の材料が使用されてい
る。
As the base metal used in the present invention, a metal containing Ni as a main component and containing at least 0.1 to 10.0% of Si, which can be used as a cathode base metal, can be used. Specific examples of the cathode base metal include Ni containing Si and Mg and, if necessary, W and Zr. The Si content in the base metal is 0.1 to 10.0%, preferably 0.1 to 5.0%, and more preferably 0.1 to 1.0%. When the content is less than 0.1, the reaction represented by the formula (V) is continuously performed during the operation of the cathode, so that Si is consumed in a short time, and the operation is performed at a particularly high current density. In the case of a cigarette, it will be consumed in a shorter time. On the other hand, if it exceeds 10.0%, the ductility of the base metal material is impaired, and the press workability of the cathode cap becomes poor, which is not practical. In the conventional electron tube cathode, a material having a Si content in the base metal of 0.02 to 0.06% is usually used.

本発明の電子管陰極では、混合電子放射物質層(5)内
のSc2O3が、界面(11)でNiと反応してScNi5が生成さ
れ、Ba2SiO4などの反応生成物の蓄積を抑制する効果が
あるので上記のように高濃度のSiを基体金属に含有させ
ることができる。
In the electron tube cathode of the present invention, Sc 2 O 3 in the mixed electron emitting material layer (5) reacts with Ni at the interface (11) to produce ScNi 5 , and accumulation of reaction products such as Ba 2 SiO 4 is accumulated. As described above, a high concentration of Si can be contained in the base metal.

本発明に用いられる筒にはとくに限定はなく、従来から
陰極筒に用いられているものが使用でき、たとえばニク
ロム(Ni-Cr)からなるものがあげられる。
The cylinder used in the present invention is not particularly limited, and those conventionally used for cathode cylinders can be used, and examples thereof include those made of nichrome (Ni-Cr).

前記混合電子放射物質層は、アルカリ土類金属の酸化物
とSc2O3とからなる層であり、たとえばBaCO3、(Ba,S
r)CO3、(Ba,Sr、Ca)CO3などを熱分解して酸化物に変
換せしめたものとSc2O3とからなる層である。
The mixed electron emitting material layer is a layer composed of an oxide of an alkaline earth metal and Sc 2 O 3, and is, for example, BaCO 3 , (Ba, S
r) A layer composed of CO 2 and (Ba, Sr, Ca) CO 3 which are thermally decomposed and converted into oxides, and Sc 2 O 3 .

Sc2O3は混合電子放射物質層中0.3〜15.0%の比率で分散
しているのが好ましく、さらに1〜5%であるのが好ま
しい。該比率が0.3%未満のばあい、前記式(VII)に示
されるように生成されるBa2SiO4の蓄積を抑制するScNi5
の生成が充分でなく、長寿命作動は期待できず、また1
5.0%をこえると従来の製造工程では充分な電子放射能
力がえられず、またバラツキが大きくなりやすい。ま
た、該層の厚さとしては50〜130μmが好ましい。
Sc 2 O 3 is preferably dispersed in the mixed electron emitting material layer at a ratio of 0.3 to 15.0%, more preferably 1 to 5%. When the ratio is less than 0.3%, ScNi 5 that suppresses the accumulation of Ba 2 SiO 4 produced as shown in the above formula (VII) is generated.
Is not sufficiently generated, long-life operation cannot be expected, and 1
If it exceeds 5.0%, sufficient electron emission ability cannot be obtained in the conventional manufacturing process, and the variation tends to increase. Further, the thickness of the layer is preferably 50 to 130 μm.

該層の形成方法にはとくに限定はなく、電着、塗布、吹
き付けなどの方法によってもよいが、良好な電子放射性
能をうるために多孔質の層膜に形成することが重要であ
るので吹き付け法が好ましい。たとえば有機溶剤に溶解
したニトロセルロースの溶液にSc2O3とBaCO3とを混合さ
せて懸濁液とし、吹き付け法によって被着形成するのが
好ましい。
The method for forming the layer is not particularly limited and may be a method such as electrodeposition, coating, and spraying, but spraying is important because it is important to form a porous layer film in order to obtain good electron emission performance. Method is preferred. For example, it is preferable that Sc 2 O 3 and BaCO 3 are mixed with a solution of nitrocellulose dissolved in an organic solvent to form a suspension, which is then formed by spraying.

以上のようにして製作された排気工程や活性化工程によ
り電子管陰極に変換されるものは、電子放射源であるド
ナーを生成させるために行なわれる従来と同様の排気工
程や活性化工程により電子管陰極に変換される。
What is converted into an electron tube cathode by the exhausting process and the activating process manufactured as described above is an electron tube cathode by the same exhausting process and activating process that are performed to generate a donor as an electron emission source. Is converted to.

このようにして製造された電子管陰極は、以下に詳しく
説明するように、従来の電子管陰極と作用効果の異なる
ものである。
The electron tube cathode manufactured as described above has a different action and effect from the conventional electron tube cathode, as described in detail below.

つぎに混合電子放射物質層の出発物質として単元炭酸塩
(BaCO3)を用いたばあいを例にあげて説明する。
Next, a case where a unitary carbonate (BaCO 3 ) is used as a starting material for the mixed electron emitting material layer will be described as an example.

上記のように構成された排気工程・活性化工程によって
電子管陰極となるものは電子管内に組込まれ、電子管内
を真空にするための排気工程でヒーター(3)によって
約1000℃に昇温加熱されてBaCO3が次式のように熱分解
される。
The electron tube cathode that is constructed by the evacuation and activation steps configured as described above is incorporated into the electron tube, and is heated up to about 1000 ° C. by the heater (3) in the evacuation step for evacuating the electron tube. BaCO 3 is pyrolyzed by the following equation.

BaCO3→BaO+CO2 (I) この反応時に生じたCO2は電子管外に排出される。混合
電子放射物質層の形成時にニトロセルロースの懸濁液を
用いたばあいは、同時にニトロセルロースも熱分解され
て気体となり、CO2とともに管外に排出される。この反
応によってBaCO3は混合電子放射物質層(5)を形成す
るBaOに変換する。
BaCO 3 → BaO + CO 2 (I) CO 2 produced during this reaction is discharged outside the electron tube. When a suspension of nitrocellulose is used in the formation of the mixed electron emitting substance layer, the nitrocellulose is also thermally decomposed into a gas at the same time and is discharged out of the tube together with CO 2 . By this reaction, BaCO 3 is converted into BaO forming the mixed electron emitting material layer (5).

本発明の電子管陰極では、式(I)の反応の際に発生す
るCO2は、混合電子放射物質層(5)内のSc2O3と式(VI
II): 3CO2+Sc2O3→Sc2(CO23 (VIII) に示されるように反応し、従来の陰極における反応のよ
うに前記式(II)、式(III)、式(IV)などで示され
るNi、Si、Mgなどの酸化はおこりにくい。
In the electron tube cathode of the present invention, CO 2 generated during the reaction of the formula (I) is mixed with Sc 2 O 3 in the mixed electron emitting material layer (5) and the formula (VI
II): 3CO 2 + Sc 2 O 3 → Sc 2 (CO 2 ) 3 (VIII) reacts as shown in the formula (II), (III), (IV) ) Etc., such as Ni, Si, and Mg are hard to oxidize.

第2図は、基体金属(1)と混合電子放射物質層(5)
との界面近傍を詳細に説明するための、該界面近傍の断
面の一部分を拡大した模式図である。混合電子放射物質
層(5)を構成するBaOは棒状の微小な結晶(8)が凝
集して数μm〜数十μmの大きさの結晶粒(9)とな
る。混合電子放射物質層(5)は、結晶粒間に適度の隙
間(10)を有する多孔質であることが電子放射性能の点
から望ましい。このような特性は、BaCO3を被着形成す
る際にほぼ決定される。
FIG. 2 shows a base metal (1) and a mixed electron emitting material layer (5).
FIG. 6 is an enlarged schematic view of a part of a cross section in the vicinity of the interface for explaining in detail the vicinity of the interface. The BaO forming the mixed electron emitting material layer (5) is aggregated into rod-shaped fine crystals (8) to form crystal grains (9) having a size of several μm to several tens of μm. From the viewpoint of electron emission performance, it is desirable that the mixed electron emission material layer (5) be porous having an appropriate gap (10) between crystal grains. Such properties are mostly determined during deposition of BaCO 3 .

還元剤のSiやMgは基体金属(1)のNiを主成分とする結
晶粒(6)の間の結晶粒界(7)を拡散移動し、式
(I)に示されるような反応で生成したBaOは、このBaO
を還元させる活性化工程中に基体金属(1)と生成した
BaOからなる混合電子放射物質層(5)との界面におい
て、基体金属(1)から拡散してくる還元剤と、たとえ
ば式(V): 2BaO+Si→2Ba+SiO2 (V) に示される反応を行なう。この遊離Baが電子放射のドナ
ーとして電子を放射する。また、この際式(VII): SiO2+2BaO→Ba2SiO4 (VII) で示される反応もおこる。
The reducing agents Si and Mg diffuse and move in the crystal grain boundaries (7) between the crystal grains (6) containing Ni as the main component of the base metal (1), and are generated by the reaction as shown in the formula (I). This BaO
Formed with the base metal (1) during the activation process to reduce the
At the interface with the mixed electron emitting material layer (5) made of BaO, the reducing agent diffusing from the base metal (1) is reacted with, for example, the formula (V): 2BaO + Si → 2Ba + SiO 2 (V). The free Ba emits electrons as a donor of electron emission. At this time, a reaction represented by the formula (VII): SiO 2 + 2BaO → Ba 2 SiO 4 (VII) also occurs.

以上のように、ドナーとなるBaは混合電子放射物質層
(5)と基体金属(1)との界面で生成され、混合電子
放射物質層(5)の結晶粒(9)の隙間(10)を移動
し、その表面に出て電子放射の役割を担うが、蒸発した
り電子管内に残留するCO、CO2、O2などのガスと反応し
て消滅したりするので、絶えず上記のような反応を行な
って補給する必要があり、基体金属(1)中のSiの含有
量は多い方が望ましい。陰極では作動中常にこの還元反
応が行なわれている。この補給と消滅のバランスをとる
ために、作動中、陰極を約800℃に保持することが望ま
しい。
As described above, Ba serving as a donor is generated at the interface between the mixed electron emitting material layer (5) and the base metal (1), and the gap (10) between the crystal grains (9) of the mixed electron emitting material layer (5). Move to the surface and play a role of electron emission, but they evaporate or disappear by reacting with gases such as CO, CO 2 and O 2 remaining in the electron tube. It is necessary to carry out a reaction to replenish, and it is desirable that the Si content in the base metal (1) is high. At the cathode, this reduction reaction is always performed during operation. To balance this replenishment and extinction, it is desirable to keep the cathode at about 800 ° C during operation.

本発明の電子管陰極では、前記式(VII)で示される反
応もおこなわれるが、生成したBa2SiO4は、式(IX): Sc2O3+10Ni→2ScNi5+30 (IX) で示される反応によって生成したScNi5と式(X): 9Ba2SiO4+16ScNi5→ 4Ba3Sc4O9+6Ba+9Si+80Ni (X) に示されるように反応し、混合電子放射物質層(5)内
のSc2O3とNiとにより分解されるので、混合電子放射物
質層(5)と基体金属(1)との界面に蓄積されにくく
なる。
In the electron tube cathode of the present invention, the reaction represented by the above formula (VII) is also performed, but the formed Ba 2 SiO 4 is the reaction represented by the formula (IX): Sc 2 O 3 + 10Ni → 2ScNi 5 +30 (IX). SCNi 5 and expressions generated by (X): 9Ba 2 SiO 4 + 16ScNi 5 → 4Ba 3 Sc 4 O 9 + 6Ba + 9Si + 80Ni reacts as shown in (X), in the mixing electron emitting material layer (5) Sc 2 O 3 Since it is decomposed by Ni and Ni, it is less likely to be accumulated at the interface between the mixed electron emitting material layer (5) and the base metal (1).

したがって、従来の陰極のようにBa2SiO4などの反応生
成物が基体金属と電子放射物質層との界面に蓄積してSi
などの還元剤の通る障壁となり、還元反応が次第に遅く
なり、ドナーとなる遊離Baの生成が困難になることはな
く、Siの含有量を増加させることができる。また、高抵
抗値の中間層がないので、電子放射電流を妨げることも
なく、電子管陰極を高い電流密度で作動させることがで
きる。さらに本発明の電子管陰極は電子放射物質の分離
活性化工程が従来のものと同じでよいので、電子管の製
造工程が従来と同じでよいという利点がある。
Therefore, like the conventional cathode, reaction products such as Ba 2 SiO 4 accumulate at the interface between the base metal and the electron-emitting material layer, and Si
As a barrier for the reducing agent to pass through, the reduction reaction gradually slows down, the generation of free Ba serving as a donor is not difficult, and the Si content can be increased. Further, since there is no intermediate layer having a high resistance value, the electron emission cathode can be operated at a high current density without disturbing the electron emission current. Further, the electron tube cathode according to the present invention has the advantage that the manufacturing process of the electron tube can be the same as the conventional one because the separation activation process of the electron emitting material can be the same as the conventional one.

実施例1および比較例1 Sc2O3を3.0%含有したSc2O3とBaCO3との混合物と、有機
溶剤に溶解したニトロセルロースの溶液とを混合して懸
濁液とし、Siを0.3%含有し、Mgを0.05%含有したNiか
らなる陰極基体金属の表面に、厚さが約100μmとなる
ように吹き付け法によって混合電子放射物質層となる層
を形成し、排気工程や活性化工程により第1図に示され
るような電子管陰極になるものを作製した。
And mixture of Example 1 and Comparative Example 1 Sc 2 O 3 a 3.0% Sc 2 O 3 and BaCO 3 containing, by mixing a solution of nitrocellulose dissolved in an organic solvent and suspension, a Si 0.3 % Of Mg and 0.05% of Mg, the surface of the cathode substrate metal made of Ni is formed into a layer to be a mixed electron emission material layer by a spraying method so as to have a thickness of about 100 μm. Thus, an electron tube cathode as shown in FIG. 1 was produced.

えられた電子管陰極になるものを、3原色を有するカラ
ーブラウン管の3個の陰極に従来の電子管陰極になるも
の(比較例1:基体金属のSiの含有率が0.03%であり、電
子放射物質層がSc2O3を含有していないほかは、実施例
1と同じもの)と組合わせて組込み、通常の排気工程お
よび活性化工程により電子管を製造した。
The obtained electron tube cathode is used as a conventional electron tube cathode in three cathodes of a color cathode ray tube having three primary colors (Comparative Example 1: Si content of the base metal is 0.03%, and an electron emitting substance is used. An electron tube was produced by the usual evacuation and activation steps in combination with the same as in Example 1, except that the layer did not contain Sc 2 O 3 .

えられた電子管を用いて電子放射電流の劣化状態を調べ
る6000時間の寿命試験を行なった。この試験では、電流
密度3A/cm2の強制加速条件を採用した。その結果を第3
図に示す。
Using the obtained electron tube, a life test of 6000 hours was carried out to examine the deterioration state of the electron emission current. In this test, a forced acceleration condition with a current density of 3 A / cm 2 was adopted. The result is the third
Shown in the figure.

第3図から明らかなように従来の陰極(17)は6000時間
後、初期値の50%に劣化する特性を示すが、本発明の電
子管陰極(16)では6000時間後、初期値の70%に保た
れ、寿命時間で表わせば約2.5倍の長寿命がえられたこ
とになる。
As is apparent from FIG. 3, the conventional cathode (17) shows a characteristic of degrading to 50% of the initial value after 6000 hours, but the electron tube cathode (16) of the present invention shows a characteristic of degrading to 70% of the initial value after 6000 hours. That is, the life is about 2.5 times longer when expressed in terms of life time.

比較例2 Siの含有量が0.03%のほかは、実施例1と同様の陰極基
体金属を使用し、実施例1と同様にして電子管陰極にな
るものを作製した。
Comparative Example 2 An electron tube cathode was produced in the same manner as in Example 1 except that the same cathode substrate metal as in Example 1 was used except that the Si content was 0.03%.

えられた電子管陰極になるものを、カラーブラウン管の
3個の陰極に実施例1および比較例1でえられた電子管
陰極になるものと一緒に組合わせて組込み、実施例1と
同様の条件で電子管を製造した。
The thus obtained electron tube cathode was assembled in combination with the three cathodes of the color cathode ray tube together with the electron tube cathodes obtained in Example 1 and Comparative Example 1, under the same conditions as in Example 1. An electron tube was manufactured.

えられた電子管を用いて、実施例1と同様に寿命試験を
行なった。その結果を第3図に示す。
A life test was performed in the same manner as in Example 1 using the obtained electron tube. The results are shown in FIG.

第3図から明らかなように、従来の陰極である本比較例
の陰極(18)(特開昭62-22347号公報の実施例に対応す
るもの)が、6000時間後、初期値の60%に劣化する特性
を示したのに対し、本発明の電子管陰極(16)は6000時
間後、初期値の70%に保たれ、6000時間での電子放射電
流は、10%改善された。
As is apparent from FIG. 3, the conventional cathode (18) of this comparative example (corresponding to the example of Japanese Patent Application Laid-Open No. 62-22347) showed 60% of the initial value after 6000 hours. While the electron tube cathode (16) of the present invention was maintained at 70% of its initial value after 6000 hours, the electron emission current at 6000 hours was improved by 10%.

[発明の効果] 以上のように本発明の電子管陰極は、Siを還元剤として
高濃度で含有する基体金属の表面に、Sc2O3を含有した
アルカリ土類金属酸化物からなる混合電子放射物質層が
形成されているので、長時間にわたって安定した電子放
射特性がえられるという効果を奏する。
[Advantages of the Invention] As described above, the electron tube cathode of the present invention is a mixed electron emission consisting of an alkaline earth metal oxide containing Sc 2 O 3 on the surface of a base metal containing Si as a reducing agent in a high concentration. Since the material layer is formed, there is an effect that stable electron emission characteristics can be obtained for a long time.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の電子管陰極の一実施例の概略断面図、
第2図は本発明における基体金属と混合電子放射物質層
との界面近傍を示す該界面近傍の断面の一部分を拡大し
た模式図、第3図は本発明の電子管陰極と従来の電子管
陰極の寿命試験の結果を示すグラフ、第4図は従来の電
子管陰極の概略断面図、第5図は従来の電子管陰極にお
ける基体金属と電子放射物質層との界面近傍を示す該界
面近傍の断面の一部分を拡大した模式図である。 (図面の主要符号) (1):基体金属 (4):三酸化スカンジウム (5):混合電子放射物質層
FIG. 1 is a schematic sectional view of an embodiment of an electron tube cathode of the present invention,
FIG. 2 is an enlarged schematic view of a part of the cross section near the interface showing the vicinity of the interface between the base metal and the mixed electron emitting material layer in the present invention, and FIG. 3 is the life of the electron tube cathode of the present invention and the conventional electron tube cathode. Fig. 4 is a graph showing the results of the test, Fig. 4 is a schematic cross-sectional view of a conventional electron tube cathode, and Fig. 5 shows a part of the cross section near the interface between the base metal and the electron-emitting substance layer in the conventional electron tube cathode. It is an enlarged schematic diagram. (Main symbols in the drawing) (1): Base metal (4): Scandium trioxide (5): Mixed electron emitting material layer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】ニッケルを主成分とし、少なくともシリコ
ンを0.1〜10重量%含有した陰極基体金属の表面に、ア
ルカリ土類金属酸化物と三酸化スカンジウムとからなる
混合電子放射物質層が形成されてなる電子管陰極。
1. A mixed electron-emitting material layer comprising an alkaline earth metal oxide and scandium trioxide is formed on the surface of a cathode base metal containing nickel as a main component and containing at least 0.1 to 10% by weight of silicon. Become an electron tube cathode.
【請求項2】三酸化スカンジウムが混合電子放射物質層
中に0.3〜15.0重量%分散している特許請求の範囲第
(1)項記載の電子管陰極。
2. An electron tube cathode according to claim 1, wherein scandium trioxide is dispersed in the mixed electron emitting material layer in an amount of 0.3 to 15.0% by weight.
【請求項3】シリコンが陰極基体金属中に0.1〜1.0重量
%含有されている特許請求の範囲第(1)項記載の電子
管陰極。
3. An electron tube cathode according to claim 1, wherein silicon is contained in the cathode base metal in an amount of 0.1 to 1.0% by weight.
JP14182987A 1987-06-05 1987-06-05 Electron tube cathode Expired - Fee Related JPH0787069B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14182987A JPH0787069B2 (en) 1987-06-05 1987-06-05 Electron tube cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14182987A JPH0787069B2 (en) 1987-06-05 1987-06-05 Electron tube cathode

Publications (2)

Publication Number Publication Date
JPS63307636A JPS63307636A (en) 1988-12-15
JPH0787069B2 true JPH0787069B2 (en) 1995-09-20

Family

ID=15301096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14182987A Expired - Fee Related JPH0787069B2 (en) 1987-06-05 1987-06-05 Electron tube cathode

Country Status (1)

Country Link
JP (1) JPH0787069B2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54129867A (en) * 1978-03-31 1979-10-08 Hitachi Ltd Cathode constituent of direct heating type
JPS6222347A (en) * 1985-07-19 1987-01-30 Mitsubishi Electric Corp Cathode for electron tube

Also Published As

Publication number Publication date
JPS63307636A (en) 1988-12-15

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