JPH0787161B2 - Method for forming end face electrodes of electronic parts - Google Patents
Method for forming end face electrodes of electronic partsInfo
- Publication number
- JPH0787161B2 JPH0787161B2 JP63013411A JP1341188A JPH0787161B2 JP H0787161 B2 JPH0787161 B2 JP H0787161B2 JP 63013411 A JP63013411 A JP 63013411A JP 1341188 A JP1341188 A JP 1341188A JP H0787161 B2 JPH0787161 B2 JP H0787161B2
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- face
- electrode
- temperature
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 239000011104 metalized film Substances 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000007772 electroless plating Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 102000004190 Enzymes Human genes 0.000 claims description 2
- 108090000790 Enzymes Proteins 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 13
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000003985 ceramic capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 102220491117 Putative postmeiotic segregation increased 2-like protein 1_C23F_mutation Human genes 0.000 description 1
- 230000010062 adhesion mechanism Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Chemically Coating (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、電子部品、特に金属化フィルムコンデンサ、
セラミックコンデンサなどの小型チップ形電子部品の端
面電極形成方法に関するものである。Description: FIELD OF THE INVENTION The present invention relates to electronic components, especially metallized film capacitors,
The present invention relates to a method for forming an end surface electrode of a small chip type electronic component such as a ceramic capacitor.
従来の技術 一般に、コンデンサは誘電体層と対向電極層を交互に重
ね合わせた構造の素子端面に、対向電極各層の導電化を
目的とし、かつリード端との接続を目的として端面電極
を形成している。2. Description of the Related Art Generally, a capacitor has an end face electrode formed on the device end face of a structure in which dielectric layers and counter electrode layers are alternately stacked, in order to make each counter electrode layer conductive and to connect to the lead end. ing.
一方、近年の電子部品の小形化要求が強くなるにつれ、
誘電体層の薄膜化とチップ化が急速に進められようとし
ている。On the other hand, as the demand for miniaturization of electronic components has increased in recent years,
Thinning of the dielectric layer and chip formation are being rapidly promoted.
発明が解決しようとする課題 そこで、端面電極形成法として、従来の金属化フィルム
コンデンサではメタリコン（金属溶射法）が、またセラ
ミックスコンデンサではAg/Pdの印刷焼成（ディップ）
または、無電解メッキが限界にきつつある。つまり、チ
ップ形電子部品は第４図に示すように、シート状誘電体
層１を対向電極層２を交互に重ねた後、スリット、断裁
などにより単体チップ化し、端面に電極を形成するた
め、端面電極形成面は凸凹のないフラットな面になる。
したがって、メタリコンでは、その機械的付着メカニズ
ムの基本的欠陥として、くい込みがなく、付着強度の弱
い、電気特性の劣る電極となるという問題を有してい
た。一方セラミックスコンデンサで用いられているPd/A
gの印刷焼成でも全く同様の理由で、不充分な電極とな
る上、Pdを添加しないとAgのマイグレーションが発生
し、コスト上および品質上での問題も含んでいた。無電
解メッキも前処理工程として一般に知られているPdの置
換処理を必要とし、複雑でコスト高になる上、品質の安
定に問題があった。Problems to be Solved by the Invention Therefore, as a method for forming an end surface electrode, a metallikon (metal spraying method) is used in a conventional metallized film capacitor, and an Ag / Pd printing firing (dip) is used in a ceramic capacitor.
Alternatively, electroless plating is reaching its limit. That is, as shown in FIG. 4, the chip-type electronic component has a structure in which the sheet-shaped dielectric layers 1 are alternately laminated on the counter electrode layers 2 and then formed into a single chip by slitting, cutting, or the like to form electrodes on the end faces. The end face electrode formation surface is a flat surface without irregularities.
Therefore, the metallikon has a problem that it is an electrode having no bite, weak adhesion strength, and poor electrical characteristics as a basic defect of its mechanical adhesion mechanism. On the other hand, Pd / A used in ceramic capacitors
For the same reason, the printing and baking of g resulted in an insufficient electrode, and migration of Ag occurred unless Pd was added, which included problems in terms of cost and quality. The electroless plating also requires a Pd replacement treatment, which is generally known as a pretreatment process, which is complicated and costly, and has a problem in quality stability.
本発明は上記従来の問題を解決するもので、電気特性の
優れた品質安定上問題のない電子部品の端面電極形成方
法を提供することを目的とするものである。The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a method for forming an end face electrode of an electronic component which has excellent electric characteristics and has no problem in quality stability.
課題を解決するための手段 上記課題を解決するために本発明の電子部品の端面電極
形成方法は、電子部品の端面に、マグネトロン型に電極
構造を有する低温スパッタリング装置により、前記電子
部品の耐熱温度以下でかつ酸素を30at％以上含む逆スパ
ッタガスを使用した逆スパッタを施して、前記端面をエ
ッチングした後、前記電子部品の耐熱温度以下で金属化
被膜を施し端面電極を形成するものである。Means for Solving the Problems In order to solve the above problems, the end face electrode forming method of the electronic component of the present invention is, on the end face of the electronic component, a low temperature sputtering apparatus having an electrode structure in a magnetron type, a heat resistant temperature of the electronic component. After performing reverse sputtering using a reverse sputtering gas containing oxygen at 30 at% or more to etch the end face, a metallized film is applied at a temperature not higher than the heat resistant temperature of the electronic component to form an end face electrode.
さらに、電子部品の端面に、マグネトロン型に電極構造
を有する低温スパッタリング装置により、電子部品の耐
熱温度以下でかつ逆スパッタを施して、前記端面をエッ
チングした後、前記電子部品の耐熱温度以下でニッケル
を含む金属化被膜を施し端面電極を形成するものであ
る。Further, the end face of the electronic component is subjected to reverse sputtering at a temperature lower than or equal to the heat resistant temperature of the electronic component by a low-temperature sputtering device having a magnetron type electrode structure, and after etching the end face, nickel at a temperature lower than or equal to the heat resistant temperature of the electronic component is used. Is applied to form an end face electrode.
さらに、ニッケルを含む金属化被膜の上に、半田付け性
を良くするために、ニッケルの無電解メッキを施して導
電層を形成し、または、鉛、錫などの半田合金およびそ
の構成金属の少なくとも１種を含む半田容易層としての
導電層を形成するものである。Further, on the metallized film containing nickel, electroless plating of nickel is performed to form a conductive layer in order to improve solderability, or at least a solder alloy such as lead or tin and its constituent metals are formed. The conductive layer is formed as an easy solder layer containing one kind.
作用 上記方法により、逆スパッタガス中に純Arに代えて、酸
素を添加していくと、電子部品の誘電体層の有機物、た
とえば、フィルム、セラミック用バインダがCO2として
化学反応を起こし、Arだけのスパッタリング効果を一層
増長する。したがって、逆スパッタガス中の酸素量が増
すほど電子部品のtanδ（接触抵抗）が低下し、電子部
品の電気特性を向上させることができる。By the above method, instead of pure Ar in the reverse sputtering gas, when oxygen is added, the organic substance of the dielectric layer of the electronic component, for example, the film, the ceramic binder causes a chemical reaction as CO 2 , Ar, Only further increase the sputtering effect. Therefore, as the amount of oxygen in the reverse sputtering gas increases, the tan δ (contact resistance) of the electronic component decreases, and the electrical characteristics of the electronic component can be improved.
さらに、電子部品の端面電極に、半田くわれが少なく耐
蝕性に優れたニッケルを含む金属材料を用いることによ
り、電子部品の耐蝕性、耐候性を飛躍的に向上させ、そ
の寿命を延ばすことがてできる。Furthermore, by using a metal material containing nickel, which has less solder nicks and excellent corrosion resistance, for the end surface electrodes of electronic parts, it is possible to dramatically improve the corrosion resistance and weather resistance of electronic parts and extend their life. You can
実施例 以下、本発明の一実施例について図面を参照しながら説
明する。Embodiment An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例の電子部品の端面電極形成方
法を実施する装置の構成図である。第１図において、真
空ベルジャー11内に、マグネトロン型カソード12と対向
させてサブストホルダ13を設置し、このカソード12上に
端面電極材料のターゲット14を取付け、また、サブスト
ホルダ13上には電子部品15の端面電極を形成すべき端面
をターゲット14に対向させて取付け、サブストホルダ13
を高周波電源16に接続し、カソード12を直流電源17に接
続する。また、真空ベルジャー11は真空排気ポンプ18に
連結され、ガス導入口19,20を有している。FIG. 1 is a block diagram of an apparatus for carrying out an end face electrode forming method for an electronic component according to an embodiment of the present invention. In FIG. 1, a vacuum holder 12 is installed in the vacuum bell jar 11 so as to face the magnetron type cathode 12, a target 14 of an end surface electrode material is mounted on the cathode 12, and an electronic component is mounted on the vacuum holder 13. Attach the end surface of 15 on which the electrode on which the electrode is to be formed faces the target 14
Is connected to a high frequency power supply 16, and the cathode 12 is connected to a DC power supply 17. The vacuum bell jar 11 is connected to the vacuum exhaust pump 18 and has gas introduction ports 19 and 20.
次に上記装置を用いた端面電極形成方法の一実施例を説
明する。Next, an embodiment of a method for forming an end face electrode using the above apparatus will be described.
実施例１ 真空ポンプ18によって、真空ベルジャー11内を２×10-5
Torrにした後、ガス導入口19からArとO2をO2が50at％に
なるよう混合した逆スパッタガスを１×10-1Torrで入
れ、電子部品15の耐熱温度以下で、かつ高周波電源16を
用いて0.5w/cm2のパワーで２分間逆スパッタエッチング
し、その後高周波電源16を切り、再度２×10-5Torrまで
真空排気ポンプ18により真空引きした後、ガス導入口20
がArを３×10-2Torrで入れ、電子部品15の素子端面にそ
れぞれNiの金属化被膜を３μｍずつ、電子部品15の耐熱
温度以下で、かつ直流電源17を用いて低温スパッタリン
グにより折出させて端面電極を形成させた後、直流電源
17を切り、常圧に戻して電子部品15の素子を取出す。Example 1 The inside of the vacuum bell jar 11 was set to 2 × 10 −5 by the vacuum pump 18.
After turning to Torr, the reverse sputtering gas, which is a mixture of Ar and O 2 so that O 2 becomes 50 at%, is introduced from the gas inlet 19 at 1 × 10 -1 Torr, and the temperature is lower than the heat resistant temperature of the electronic component 15 and the high frequency power supply is used. Reverse sputter etching was performed for 2 minutes at a power of 0.5 w / cm 2 using 16, then the high frequency power supply 16 was turned off, the vacuum exhaust pump 18 was evacuated again to 2 × 10 -5 Torr, and then the gas inlet 20
Put Ar at 3 × 10 -2 Torr and deposit 3 μm of Ni metallized film on each element end face of the electronic component 15 at a temperature not higher than the heat resistant temperature of the electronic component 15 and by low temperature sputtering using the DC power supply 17. After forming the end face electrode, direct current power supply
Cut off 17, return to normal pressure and take out the element of electronic component 15.
このように、逆スパッタ時に純Arに変えて、O2を添加し
ていくと、第２図に示すように、O2量が増すにつれて電
子部品15のtanδ（接触抵抗）が低下する。これは、誘
電体層の有機物（たとえば、フィルム、セラミック用バ
インダ）がCO2として、化学反応を起こし、Arだけのス
パッタリング効果をさらに増長するためと考えられる。
さらに、端面電極の金属材料を検討した結果Cuよりも半
田くわれが少なく耐蝕性に優れたNi合金を見出した。つ
まり、半田くわれは、Agが最も多いが、Cuも実験により
３μ程度あることと判明した。それに対し、Niは半田く
われがCuに比べて1/3以下で膜厚が１μでも充分である
ことがわかった。さらに、金属化被膜としてのNiにCr,T
i,Wを添加すると、第３図に示すように、耐蝕性（耐候
性すなわち寿命）が良くなることも判明した。このよう
に、電子部品15の端面電極としての金属化被膜は少なく
ともNiを含み、その組成比が33at％以上のNi合金である
ことが必要である。Thus, when O 2 is added instead of pure Ar during reverse sputtering, the tan δ (contact resistance) of the electronic component 15 decreases as the amount of O 2 increases, as shown in FIG. It is considered that this is because the organic substance (for example, the film, the binder for ceramics) in the dielectric layer causes a chemical reaction as CO 2 and further enhances the sputtering effect of only Ar.
Furthermore, as a result of studying the metal material of the end face electrode, a Ni alloy having less solder nick and less corrosion resistance than Cu was found. In other words, it was found from the experiment that solder shavings had the highest amount of Ag, but Cu also had a thickness of about 3μ. On the other hand, it has been found that Ni has a solder crack of 1/3 or less as compared with Cu and a film thickness of 1 μ is sufficient. Furthermore, as a metallized film, Ni, Cr, T
It was also found that the addition of i and W improves the corrosion resistance (weather resistance, ie, life) as shown in FIG. As described above, the metallized coating as the end face electrode of the electronic component 15 needs to be a Ni alloy containing at least Ni and having a composition ratio of 33 at% or more.
実施例２ 実施例１と同様の手順で、逆スパッタエッチングして、
高周波電源16を切り、真空引きした後、Arを３×10-2To
rrで入れ、電子部品15の素子端面にそれぞれNi60％、Ti
40％の合金の金属化被膜を３μｍずつ、低温スパッタリ
ングにより折出させて端面電極を形成させた後、直流電
源17を切り、常圧に戻して電子部品15の素子を取出す。Example 2 Reverse sputter etching was performed in the same procedure as in Example 1,
Turn off the high-frequency power supply 16 and evacuate it, and then use Ar for 3 × 10 -2 To
rr, and put Ni60% and Ti on the device end face of electronic component 15 respectively.
A metallized coating of 40% alloy is deposited by 3 μm at a time by low temperature sputtering to form end face electrodes, the DC power supply 17 is turned off, the pressure is returned to normal pressure, and the element of the electronic component 15 is taken out.
実施例３ 実施例１と同様の手順で、逆スパッタエッチングし、高
周波電源16を切り、真空引きした後、Arを２×10-2Torr
で入れ、セラミックチップ型コンデンサの素子端面にそ
れぞれNi85％/Cr15％の合金の金属化被膜をは２μｍず
つ低温スパッタリングにより折出させて端面電極を形成
させた後、直流電源17を切り、常圧に戻して電子部品15
の素子を取出し、次に、これをバレル型メッキ治具に入
れ、Ni/Pの無電解メッキ浴に投入し、回転させながら10
μｍの皮膜を折出させ、よく水洗の後、さらに、Sn/Pd
の半田メッキを2.5μｍ折出させ、水洗の後、乾燥させ
る。Example 3 In the same procedure as in Example 1, reverse sputter etching was performed, the high frequency power supply 16 was turned off, and vacuum drawing was performed. Then, Ar was added at 2 × 10 −2 Torr.
Then, the metallized coating of Ni85% / Cr15% alloy on each element end face of the ceramic chip type capacitor is protruded by low temperature sputtering by 2 μm to form an end face electrode, and then the DC power supply 17 is turned off and the normal pressure is applied. Return to electronic components 15
Then, put it in a barrel-type plating jig, put it in a Ni / P electroless plating bath, and rotate it for 10 seconds.
A film with a thickness of μm is projected, washed thoroughly with water, and then Sn / Pd
2.5 μm of solder plating is applied, washed with water and dried.
最後に半田などのSn,Pd系の合金をコーティングしたも
のは、特に半田付け性が向上し、半田付け不良に悩むユ
ーザの期待に応えるものである。Finally, those coated with Sn, Pd-based alloys such as solder have particularly improved solderability and meet the expectations of users who are troubled by defective soldering.
以上のように、逆スパッタガスにO2ガスを混入し、その
量が30at％以上で、逆スパッタエッチングした後、低温
スパッタにより端面電極を形成した電子部品は、tanδ
（接触抵抗）の低減、つまり、素子の電気特性を向上さ
せることができる。また、低温スパッタリングした端面
電極にNiおよびその合金を用いると、耐蝕性、耐候性が
向上し、寿命が延びるとともに、外装レス化が期待でき
る。As described above, the electronic component in which the O 2 gas is mixed in the reverse sputtering gas and the amount of the O 2 gas is 30 at% or more and the end face electrodes are formed by the low temperature sputtering after the reverse sputtering etching is performed is
(Contact resistance) can be reduced, that is, the electrical characteristics of the device can be improved. Further, when Ni and its alloy are used for the end face electrode sputtered at a low temperature, the corrosion resistance and the weather resistance are improved, the life is extended, and the absence of the exterior can be expected.
発明の効果 以上のように本発明によれば、電子部品の端面に、マグ
ネトロン型に電極構造を有する低温スパッタリング装置
により、電子部品の耐熱温度以下でかつ酵素を30at％以
上含む逆スパッタガスを使用して逆スパッタを施して端
面をエッチングした後、電子部品の端面に、その耐熱温
度以下で金属化被膜を施して端面電極を形成することに
より電子部品の電気特性を向上させることができ、特に
接触抵抗を低下させることができる。EFFECTS OF THE INVENTION As described above, according to the present invention, the low-temperature sputtering apparatus having the magnetron type electrode structure is used on the end face of the electronic component, and the reverse sputtering gas containing the enzyme at 30 at% or more and lower than the heat resistant temperature of the electronic component is used. Then, after performing end face etching by performing reverse sputtering, the end face of the electronic component can be improved in electrical characteristics by forming a facet electrode by applying a metallized film at a temperature lower than its heat resistant temperature. The contact resistance can be reduced.
また、端面電極としての金属化被膜に、Niを含む合金を
用いることにより、電子部品の耐蝕性、耐候性を飛躍的
に向上させ、その寿命を延ばすことができる。Further, by using an alloy containing Ni for the metallized film as the end face electrode, the corrosion resistance and weather resistance of the electronic component can be dramatically improved and the life thereof can be extended.
第１図は、本発明の一実施例の電子部品の端面電極形成
方法を実施する装置の構成図、第２図は同電子部品の端
面電極形成方法における逆スパッタガスの酸素分圧とta
nδ（接触抵抗）の電気特性を示すグラフ、第３図は同
電子部品の端面電極形成方法における端面電極材料と耐
候性を示す棒グラフ、第４図はチップ型コンデンサを作
る工程における誘電体層と電極層の積み重ね状態を示す
図である。 11……真空ベルジャー、12……カソード、13……サブス
トホルダ、14……ターゲット、15……電子部品、16……
高周波電源、17……直流電源、18……真空排気ポンプ、
19,20……ガス導入口。FIG. 1 is a block diagram of an apparatus for carrying out an end face electrode forming method of an electronic component according to an embodiment of the present invention, and FIG. 2 is a partial pressure of oxygen of a reverse sputtering gas and ta in the end face electrode forming method of the same electronic component.
Graph showing electrical characteristics of nδ (contact resistance), FIG. 3 is a bar graph showing end face electrode material and weather resistance in the end face electrode forming method of the same electronic component, and FIG. 4 is a dielectric layer in the process of making a chip type capacitor. It is a figure which shows the stacked state of an electrode layer. 11 …… Vacuum bell jar, 12 …… Cathode, 13 …… Substrate holder, 14 …… Target, 15 …… Electronic parts, 16 ……
High frequency power supply, 17 …… DC power supply, 18 …… Vacuum pump,
19,20 …… Gas inlet.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｃ２３Ｃ 18/36 Ｃ２３Ｆ 4/00 Ｃ 8417−4Ｋ Ｈ０１Ｇ 4/252 4/30 ３１１ Ｄ 9174−5Ｅ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI Technical display location C23C 18/36 C23F 4/00 C 8417-4K H01G 4/252 4/30 311 D 9174-5E
Claims (4)
構造を有する低温スパッタリング装置により、前記電子
部品の耐熱温度以下でかつ酵素を30at％以上含む逆スパ
ッタガスを使用した逆スパッタを施して、前記端面をエ
ッチングした後、前記電子部品の耐熱温度以下で金属化
被膜を施し端面電極を形成する電子部品の端面電極形成
方法。1. An end face of an electronic component is reverse-sputtered by a low-temperature sputtering device having a magnetron type electrode structure, using a reverse sputtering gas having a temperature lower than the heat-resistant temperature of the electronic component and containing 30 at% or more of an enzyme, A method for forming an end face electrode of an electronic component, comprising: forming an end face electrode by applying a metallized film at a temperature not higher than a heat resistant temperature of the electronic component after etching the end face.
構造を有する低温スパッタリング装置により、電子部品
の耐熱温度以下でかつ逆スパッタを施して、前記端面を
エッチングした後、前記電子部品の耐熱温度以下でニッ
ケルを含む金属化被膜を施し端面電極を形成する電子部
品の端面電極形成方法。2. An end face of an electronic component is etched at a temperature lower than or equal to the heat resistant temperature of the electronic component by reverse sputtering using a low temperature sputtering device having a magnetron type electrode structure to etch the end face and then the heat resistant temperature of the electronic component. A method for forming an end face electrode of an electronic component, comprising forming a end face electrode by applying a metallized coating containing nickel below.
ケルの無電解メッキを施して導電層を形成した請求項２
記載の電子部品の端面電極形成方法。3. A conductive layer is formed by electroless plating of nickel on a metallized coating as an end face electrode.
A method for forming an end surface electrode of an electronic component as described above.
錫などの半田合金およびその構成金属の少なくとも１種
を含む半田容易層としての導電層を形成する請求項２記
載の電子部品の端面電極形成方法。4. Lead on the metallized film as an end face electrode,
The method for forming an end face electrode of an electronic component according to claim 2, wherein a conductive layer is formed as a solder easy layer containing a solder alloy such as tin and at least one of the constituent metals thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63013411A JPH0787161B2 (en) | 1988-01-22 | 1988-01-22 | Method for forming end face electrodes of electronic parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63013411A JPH0787161B2 (en) | 1988-01-22 | 1988-01-22 | Method for forming end face electrodes of electronic parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01187912A JPH01187912A (en) | 1989-07-27 |
| JPH0787161B2 true JPH0787161B2 (en) | 1995-09-20 |
Family
ID=11832393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63013411A Expired - Lifetime JPH0787161B2 (en) | 1988-01-22 | 1988-01-22 | Method for forming end face electrodes of electronic parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0787161B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI781115B (en) * | 2016-10-17 | 2022-10-21 | 日商太陽誘電股份有限公司 | Ceramic electronic part and its manufacturing method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06295644A (en) * | 1993-04-08 | 1994-10-21 | Nippon Steel Corp | Vacuum arc treatment method and pretreatment method |
| JP3489002B2 (en) * | 1999-04-15 | 2004-01-19 | 株式会社村田製作所 | Electronic component and method of manufacturing the same |
-
1988
- 1988-01-22 JP JP63013411A patent/JPH0787161B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI781115B (en) * | 2016-10-17 | 2022-10-21 | 日商太陽誘電股份有限公司 | Ceramic electronic part and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01187912A (en) | 1989-07-27 |
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