JPH0787227B2 - IC mounting board - Google Patents
IC mounting boardInfo
- Publication number
- JPH0787227B2 JPH0787227B2 JP2004267A JP426790A JPH0787227B2 JP H0787227 B2 JPH0787227 B2 JP H0787227B2 JP 2004267 A JP2004267 A JP 2004267A JP 426790 A JP426790 A JP 426790A JP H0787227 B2 JPH0787227 B2 JP H0787227B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- mounting substrate
- copper
- chip
- ceramics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 35
- 239000000919 ceramic Substances 0.000 claims description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 10
- 239000011148 porous material Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910052878 cordierite Inorganic materials 0.000 description 4
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910001597 celsian Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、LSI等のIC装置を実装するための基板に関
し、特に、高熱伝導度及び低膨張率のIC実装用基板に関
する。Description: TECHNICAL FIELD The present invention relates to a substrate for mounting an IC device such as an LSI, and particularly to a substrate for mounting an IC having high thermal conductivity and low expansion coefficient.
〔従来の技術及び発明が解決しようとする技術的課題〕 従来より、ICチップを実装する基板として、Al2O3から
なるものが一般的に用いられている。[Prior Art and Technical Problem to be Solved by the Invention] Conventionally, a substrate made of Al 2 O 3 has been generally used as a substrate for mounting an IC chip.
しかしながら、近年開発されてきている高速LSIには、1
0W近い大電力を消費し、かなりの熱量を発生するものが
存在する。ICチップを構成しているSiウエハーの線膨張
率は3.5×10-6/℃程度であり、他方Al2O3のそれは10×1
0-6/℃前後と、Siウエハーの線膨張率の３倍近く大きな
線膨張率を示す。従って、大電力を消費する高速LSIチ
ップを実装した場合には、熱膨張率の差により、LSIチ
ップがAl2O3基板から剥がれるおそれがあった。However, the high-speed LSI that has been developed in recent years has
Some of them consume a large amount of electric power near 0 W and generate a considerable amount of heat. The linear expansion coefficient of the Si wafer that constitutes the IC chip is about 3.5 × 10 -6 / ° C, while that of Al 2 O 3 is 10 × 1
A linear expansion coefficient of about 0 −6 / ° C., which is about three times the linear expansion coefficient of a Si wafer, is shown. Therefore, when a high-speed LSI chip that consumes a large amount of power is mounted, the LSI chip may peel off from the Al 2 O 3 substrate due to the difference in thermal expansion coefficient.
他方、IC実装用基板は、動作時のデバイス温度の上昇を
防止するために放熱性に優れたものであることが要求さ
れる。従来より基板材料として用いられているAl2O3の
熱伝導率は、セラミックスの中でも高い方であり、22W/
mk（但し、ｍはメートル，＋はケルビン温度）である
が、放熱性の点で十分なものではなかった。特に、高速
LSIのような大電力を消費するICチップを実装した際に
は、動作時にLSIの温度が上昇しがちであった。On the other hand, the IC mounting substrate is required to have excellent heat dissipation so as to prevent the device temperature from rising during operation. The thermal conductivity of Al 2 O 3 , which has been used as a substrate material in the past, is the highest of all ceramics.
mk (however, m is meter, + is Kelvin temperature), but it was not sufficient in terms of heat dissipation. Especially fast
When an IC chip that consumes a large amount of power such as LSI is mounted, the temperature of the LSI tends to rise during operation.
上記のような欠点を補うものとして、銅−タングステン
合金または窒化アルミニウム・セラミックス等からなる
IC実装用基板の実用化が検討されている。しかしなが
ら、何れの材料も1cm2あたり1000円程度と著しく高価で
あり、使用用途に価格面からの制約が生じる。To compensate for the above-mentioned drawbacks, it is made of copper-tungsten alloy or aluminum nitride ceramics, etc.
Practical application of IC mounting substrates is under consideration. However, all the materials are extremely expensive at about 1000 yen per 1 cm 2 , and there are restrictions in terms of usage in terms of price.
よって、本発明の目的は、熱膨張率がSiウエハーの熱膨
張率に近く、かつ放熱性に優れた安価なIC実装用基板を
提供することにある。Therefore, an object of the present invention is to provide an inexpensive IC mounting substrate having a thermal expansion coefficient close to that of a Si wafer and excellent in heat dissipation.
本願発明者らは、上記の課題を達成すべく、種々検討し
た結果、セラミックスや金属単体ではなく、セラミック
スに金属を複合化した材料を用いれば高熱伝導率かつ低
熱膨張率のIC実装用基板を構成し得ることを見出し、本
発明をなすに至った。The inventors of the present application, in order to achieve the above-mentioned problems, as a result of various studies, if a material obtained by compounding metal with ceramics is used instead of ceramics or metal alone, a substrate for IC mounting having high thermal conductivity and low thermal expansion coefficient can be obtained. The inventors have found that they can be configured and have completed the present invention.
すなわち、本発明は、空孔率20〜90％の多孔質セラミッ
ク体に空孔内に金属を注入してなる金属−セラミック複
合体よりなることを特徴とするIC実装用基板である。That is, the present invention is an IC mounting substrate characterized by comprising a metal-ceramic composite obtained by pouring a metal into the pores of a porous ceramic body having a porosity of 20 to 90%.
本発明において多孔質セラミック体を構成するセラミッ
ク材料としては、20〜90％の空孔率の空孔を形成し得る
ものであれば特に問わない。例えば、コージライト（2M
gO・2Al2O3・5SiO2）を好適に用いることができる。In the present invention, the ceramic material forming the porous ceramic body is not particularly limited as long as it can form pores having a porosity of 20 to 90%. For example, cordierite (2M
gO.2Al 2 O 3 .5SiO 2 ) can be preferably used.
上記セラミック材料に、バインダ及び樹脂粉末を適当な
割合で混合し、成形した後焼成し、上記樹脂粉末を除去
することにより、空孔を形成することができる。空孔率
を20％〜90％の割合で形成するのは、20％未満では熱伝
導度が十分な大きさにならず、他方、90％を超えると熱
膨張率が大きくなり過ぎるからである。Voids can be formed by mixing the ceramic material with a binder and a resin powder in appropriate proportions, molding the mixture, and then firing the mixture to remove the resin powder. The porosity is formed at a rate of 20% to 90% because if it is less than 20%, the thermal conductivity is not sufficiently large, while if it exceeds 90%, the coefficient of thermal expansion becomes too large. .
空孔内に金属を注入するのは、金属の易熱伝導性を利用
するためである。注入される金属としては、熱伝導性に
優れたものであれば特に問わないが、価格的な面から銅
を用いることが好ましい。また、単体の銅だけでなく、
銅を主体とする合金を用いてもよい。特に、銅−錫合金
が好適に用いられる。銅−錫合金を用いる場合の銅及び
錫の含有量は、それぞれ、銅が90％以上、好ましくは97
％、錫が10％以下、好ましくは３％である。これは、錫
が多いほど合金の融点が下がり、加工が容易となるが、
熱伝導率が低下してしまうためである。The reason for injecting the metal into the holes is to utilize the heat conductivity of the metal. The metal to be injected is not particularly limited as long as it has excellent thermal conductivity, but copper is preferably used in terms of cost. Also, not only single copper,
You may use the alloy which has copper as a main component. Particularly, a copper-tin alloy is preferably used. When the copper-tin alloy is used, the content of copper and tin is 90% or more of copper, preferably 97%.
%, Tin is 10% or less, preferably 3%. This is because as the amount of tin increases, the melting point of the alloy decreases, making processing easier,
This is because the thermal conductivity will decrease.
銅合金を構成するための錫以外の成分としては、Si、Z
r、Al、Cd、CrまたはＰ等を挙げることができる。何れ
にしても、高い熱伝導率を得るには、90％以上の銅を含
有させた銅合金を用いることが好ましい。As components other than tin for forming the copper alloy, Si, Z
Examples thereof include r, Al, Cd, Cr or P. In any case, in order to obtain high thermal conductivity, it is preferable to use a copper alloy containing 90% or more of copper.
本発明でば、20〜90％の空孔率の多孔質セラミック体の
該空孔内に金属が注入されて構成される金属−セラミッ
ク複合体によりIC実装用基板が構成されているので、セ
ラミックスの長所である低熱膨張性と、注入された金属
の長所である高熱伝導性とを併せ持ったIC実装用基板が
容易に得られる。According to the present invention, since the IC mounting substrate is composed of the metal-ceramic composite composed by pouring a metal into the pores of the porous ceramic body having a porosity of 20 to 90%, the ceramic It is possible to easily obtain an IC mounting substrate that has both the advantages of low thermal expansion and the advantages of injected metal, that is, high thermal conductivity.
以下、本発明の非限定的な実施例につき説明する。 Hereinafter, non-limiting examples of the present invention will be described.
コージライト（2MgO・2Al2O3・5SiO2）を主体としたセ
ラミック原料粉末とバインダとを混合し、さらに空孔を
形成するために樹脂粉末を上記混合粉末に対して20重量
％の割合で混合した材料を用い、20mm×20mm×1mmの板
状体を成形した。A ceramic raw material powder mainly composed of cordierite (2MgO · 2Al 2 O 3 · 5SiO 2 ) is mixed with a binder, and a resin powder is added in an amount of 20% by weight based on the mixed powder to form pores. Using the mixed materials, a 20 mm × 20 mm × 1 mm plate-shaped body was formed.
成形された板状体を1400℃程度の温度で焼成し、空孔率
約50％のコージライト系多孔質セラミック板を得た。The formed plate-shaped body was fired at a temperature of about 1400 ° C to obtain a cordierite-based porous ceramic plate having a porosity of about 50%.
他方、真空容器内に、銅97％及び錫３％の割合で配合さ
れた金属を溶融しておき、上記多孔質セラミック板を該
真空容器内に投入し、脱気した後、溶融金属中に浸漬し
た。溶融金属中に多孔質セラミック板を浸漬した状態
で、加圧し、空孔内に溶融金属を充填し、しかる後真空
容器から取出し冷却した。On the other hand, a metal mixed with 97% of copper and 3% of tin was melted in a vacuum container, the above-mentioned porous ceramic plate was put into the vacuum container, and after deaeration, it was placed in a molten metal. Soaked. While the porous ceramic plate was immersed in the molten metal, pressure was applied to fill the pores with the molten metal, which was then taken out from the vacuum container and cooled.
冷却後、必要により切削あるいは研磨等の加工を施し、
IC実装用基板とした。After cooling, if necessary, perform processing such as cutting or polishing,
It was used as an IC mounting substrate.
得られた金属−セラミックス複合体からなるIC実装用基
板の熱伝導率は150W/mkであり、線膨張率は８×10-6/℃
であった。また、得られたIC実装用基板の断面を第１図
に拡大して示す。第１図から明らかなように、IC実装用
基板１では、セラミックスよりなる部分２内に、注入さ
れた金属部分３が無秩序に散在していることがわかる。The obtained IC-mounting substrate made of a metal-ceramics composite has a thermal conductivity of 150 W / mk and a linear expansion coefficient of 8 × 10 -6 / ° C.
Met. Further, the cross section of the obtained IC mounting substrate is shown in an enlarged scale in FIG. As is clear from FIG. 1, in the IC mounting substrate 1, the injected metal parts 3 are randomly scattered in the part 2 made of ceramics.
本実施例のIC実装用基板１では、金属部分３が散在して
いるため、セラミックスの低熱膨張性に加えて、注入金
属による高熱伝導性が得られており、上記のような高熱
伝導度及び低線膨張率が達成されている。In the IC mounting substrate 1 of the present embodiment, since the metal parts 3 are scattered, in addition to the low thermal expansion of ceramics, high thermal conductivity due to the injected metal is obtained, and the high thermal conductivity and A low coefficient of linear expansion is achieved.
従って、高速LSIチップのように大電力を消費する素子
を実装した場合であっても、Siウエハーとの熱膨張差が
小さいため熱ストレスによる剥がれ等が生じ難く、かつ
放熱性も効果的に改善される。Therefore, even when an element that consumes a large amount of power such as a high-speed LSI chip is mounted, peeling due to thermal stress is unlikely to occur because the difference in thermal expansion from the Si wafer is small, and heat dissipation is also effectively improved. To be done.
上記実施例では、線膨張率が８×10-6/℃のIC実装用基
板１が構成されていたが、本発明のIC実装用基板では、
線膨張率が８×10-6/℃以下の金属−セラミック複合体
を用いることが好ましい。８×10-6/℃以下の線膨張率
であれば、Siウエハーの線膨張率との差が小さいため、
剥がれ等の事故が生じ難いからである。In the above embodiment, the IC mounting substrate 1 having a linear expansion coefficient of 8 × 10 −6 / ° C. was constructed. However, in the IC mounting substrate of the present invention,
It is preferable to use a metal-ceramic composite having a linear expansion coefficient of 8 × 10 −6 / ° C. or less. If the linear expansion coefficient is 8 × 10 −6 / ° C. or less, the difference from the linear expansion coefficient of the Si wafer is small,
This is because accidents such as peeling are unlikely to occur.
金属−セラミック複合体の線膨張率は、用いるセラミッ
クスの線膨張率により決まり、8.0×10-6℃／以下の線
膨張率を実現するセラミックスとしては、上述したコー
ジライト系の他、アルミナにガラスを加えたもの、ステ
アタイト系もしくはセルシアン系等の他のセラミックス
や、さらにSiCのような炭化物をセラミックスを用いる
ことができる。The coefficient of linear expansion of the metal-ceramic composite is determined by the coefficient of linear expansion of the ceramics used. Ceramics that achieve a coefficient of linear expansion of 8.0 × 10 -6 ° C / or less include cordierite-based ceramics as well as alumina and glass. , Other ceramics such as steatite type or celsian type, and ceramics such as carbide such as SiC can be used.
また、IC実装用基板の周囲を例えばはんだ・錫等のよう
な金属でめっきしてもよく、それによって注入された金
属、例えば銅の酸化を防止することができる。In addition, the periphery of the IC mounting substrate may be plated with a metal such as solder or tin, thereby preventing the injected metal, for example, copper from being oxidized.
上述したIC実装用基板の使用状態を第２図に示す。IC実
装用基板１上に、ICチップ４が実装される。通常、IC実
装用基板１は、ICチップ４の平面積の４倍程度の平面積
を有するように構成される。FIG. 2 shows a usage state of the above-mentioned IC mounting substrate. The IC chip 4 is mounted on the IC mounting substrate 1. Normally, the IC mounting substrate 1 is configured to have a plane area that is about four times the plane area of the IC chip 4.
なお、第３図に側面図で示すように、IC実装用基板１の
下面に、すなわちICチップ４の搭載される側と反対側の
面に金属板５を貼り付けておいてもよい。金属板５とし
ては、熱伝導性に優れた銅からなるものを好適に用いる
ことができる。このように、熱伝導性に優れた金属板５
を一方面に貼り付けることにより、金属−セラミックス
複合体よりなるIC実装用基板１の放熱性をより効果的に
高めることができる。As shown in the side view of FIG. 3, the metal plate 5 may be attached to the lower surface of the IC mounting substrate 1, that is, the surface opposite to the side on which the IC chip 4 is mounted. As the metal plate 5, a plate made of copper having excellent thermal conductivity can be preferably used. In this way, the metal plate 5 having excellent thermal conductivity
By sticking to one surface, the heat dissipation of the IC mounting substrate 1 made of the metal-ceramic composite can be more effectively improved.
なお、金属板５に代えて金属シートや金属膜を用いても
良い。A metal sheet or a metal film may be used instead of the metal plate 5.
金属板５の面積は、好ましくは、第３図に示すようにIC
実装用基板１よりも大きくされている。これは、図示の
矢印Ａで示すように、ICチップ４側から伝わった熱が金
属板５の上面5aから効果的に放散させ得るからである。
すなわち、放熱面積を単に拡げ得るだけでなく、矢印Ａ
で示すように、上方に移動しながら熱を効果的に放散す
ることができる。従って、ICチップ４が搭載される側と
反対側の面に金属−セラミックス複合体よりなる大面積
の金属板５を貼り付けることにより、放熱性を、より一
層効果的に高めることができる。The area of the metal plate 5 is preferably IC as shown in FIG.
It is made larger than the mounting substrate 1. This is because the heat transmitted from the IC chip 4 side can be effectively dissipated from the upper surface 5a of the metal plate 5, as shown by the arrow A in the figure.
That is, not only can the heat dissipation area be expanded, but the arrow A
As shown by, heat can be effectively dissipated while moving upward. Therefore, by attaching the large-area metal plate 5 made of a metal-ceramic composite to the surface opposite to the side on which the IC chip 4 is mounted, the heat dissipation can be more effectively enhanced.
以上のように、本発明では、セラミック体の空孔内に金
属が注入された金属−セラミック複合体によりIC実装用
基板が構成されている。よって、セラミックスの長所で
ある低熱膨張性と、金属の長所である高熱伝導性とを併
せ持ったIC実装用基板を得ることが可能となる。As described above, in the present invention, the IC mounting substrate is configured by the metal-ceramic composite in which the metal is injected into the holes of the ceramic body. Therefore, it is possible to obtain an IC mounting substrate having both low thermal expansion, which is an advantage of ceramics, and high thermal conductivity, which is an advantage of metal.
しかも、金属の易熱伝導性を利用するために金属を複合
化させているだけであるため、高価な特殊な材料を用い
る必要がなく、銅等の安価な金属材料を用いることがで
きる。よって、動作時の温度上昇やデバイスの基板から
の剥がれの生じ難い安価なIC実装用基板を得ることが可
能となる。Moreover, since the metal is simply compounded in order to utilize the heat conductivity of the metal, it is not necessary to use an expensive special material, and an inexpensive metal material such as copper can be used. Therefore, it is possible to obtain an inexpensive IC mounting substrate in which temperature rise during operation and peeling of the device from the substrate hardly occur.
第１図は本発明の一実施例において構成されたIC実装用
基板の部分拡大平面図、第２図は本実施例のIC実装用基
板上にICチップを搭載した状態を示す略図的側面図、第
３図はICチップが搭載される側と反対側の面に金属板が
貼り付けられたIC実装用基板を示す略図的側面図であ
る。 図において、１はIC実装用基板、２はセラミックス部
分、３は注入された金属部分、４はICチップ、５は金属
板を示す。FIG. 1 is a partially enlarged plan view of an IC mounting board constructed in one embodiment of the present invention, and FIG. 2 is a schematic side view showing a state in which an IC chip is mounted on the IC mounting board of this embodiment. FIG. 3 is a schematic side view showing an IC mounting substrate in which a metal plate is attached to the surface opposite to the side on which the IC chip is mounted. In the figure, 1 is an IC mounting substrate, 2 is a ceramic part, 3 is an injected metal part, 4 is an IC chip, and 5 is a metal plate.
Claims (3)
孔内に金属を注入してなる金属−セラミック複合体を用
いたことを特徴とするIC実装用基板。1. An IC mounting substrate comprising a metal-ceramic composite obtained by pouring a metal into the pores of a porous ceramic body having a porosity of 20 to 90%.
である、請求項１に記載のIC実装用基板。2. The IC mounting substrate according to claim 1, wherein the metal is copper or an alloy mainly containing copper.
８×10-6/℃以下である、請求項１または２に記載のIC
実装用基板。3. The IC according to claim 1, wherein the linear expansion coefficient of the metal-ceramic composite is 8 × 10 −6 / ° C. or less.
Mounting board.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004267A JPH0787227B2 (en) | 1990-01-10 | 1990-01-10 | IC mounting board |
| DE4100145A DE4100145A1 (en) | 1990-01-10 | 1991-01-04 | SUBSTRATE FOR THE INSTALLATION OF INTEGRATED CIRCUITS AND COMPREHENSIVE ELECTRONIC COMPONENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004267A JPH0787227B2 (en) | 1990-01-10 | 1990-01-10 | IC mounting board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03208361A JPH03208361A (en) | 1991-09-11 |
| JPH0787227B2 true JPH0787227B2 (en) | 1995-09-20 |
Family
ID=11579768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004267A Expired - Fee Related JPH0787227B2 (en) | 1990-01-10 | 1990-01-10 | IC mounting board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0787227B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5532513A (en) * | 1994-07-08 | 1996-07-02 | Johnson Matthey Electronics, Inc. | Metal-ceramic composite lid |
| EP1055650B1 (en) | 1998-11-11 | 2014-10-29 | Totankako Co., Ltd. | Carbon-based metal composite material, method for preparation thereof and use thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0787226B2 (en) * | 1987-02-25 | 1995-09-20 | 株式会社村田製作所 | Low dielectric constant insulator substrate |
-
1990
- 1990-01-10 JP JP2004267A patent/JPH0787227B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03208361A (en) | 1991-09-11 |
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| Date | Code | Title | Description |
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| LAPS | Cancellation because of no payment of annual fees |