JPH0788495B2 - Film-like joining member - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a film-like joining member suitable for joining a semiconductor element to a supporting member in a semiconductor device.

<< Prior Art >> In the manufacture of semiconductor devices such as ICs and LSIs, there is a step of fixing an electric circuit element composed of semiconductor pieces called pellets to a substrate. Conventionally, in this process, when a semiconductor pellet is bonded to a pellet attachment surface, for example, a tab of a lead frame, a silver paste is used. However, since this silver paste uses a precursor of an epoxy resin or a polyimide resin as a binder for silver powder, it takes a long time to cure and has a drawback of poor productivity. Further, this type of silver paste is difficult to be applied uniformly on the lead frame due to variations in its viscosity and deterioration, etc., and as a result, the pellets are tilted, wire bonding is hindered, and the device is not damaged. There is also a drawback that it causes uniform distortion. These drawbacks are due to the binder resin properties and the adoption of a paste-like coating system.

As an improvement method, as disclosed in JP-A-61-34085, by thermocompression bonding a lead frame and pellets through a thermoplastic resin film composed of a resin continuous phase and a resin dispersed phase. Since the thermoplastic resin can be bonded in an instant due to the heat fusion property, the productivity can be improved as compared with the case where the precursor of the epoxy resin or the polyimide resin is used.

Furthermore, in the method of joining pellets with this type of film,
Since there is no risk of uneven thickness of the adhesive layer,
From this point, it is possible to obtain a highly reliable semiconductor device without the possibility of causing trouble in the subsequent wire bonding and causing uneven distortion of the semiconductor element.

<< Problems to be Solved by the Invention >> However, although the film-like joining member already proposed has improved productivity and parallelism can be obtained in the pellet, the heat resistance of the thermoplastic resin is low (Tg 170 to 240 ° C). ), There is a problem that the adhesive strength is reduced at a high temperature, the position is displaced during wire bonding, and peeled off in a severe case.

However, if a resin having a high Tg is simply used to improve the heat resistance, there is a problem that the heat fusion property between the pellet and the lead frame is significantly deteriorated.

In order to solve such a problem, an object of the present invention is to provide a film-like joining member having good heat-sealing property and adhesiveness at high temperature that can withstand wire bonding.

<< Means for Solving Problems >> In the present invention, the resin component of the film-like joining member is represented by the general formula (I). (In the formula, X and R each independently represent a divalent organic group) The present invention relates to a film-like joining member containing a polyesterimide polymer having a repeating unit.

In the general formula (I), typical examples of X include p-phenylene group, m-phenylene group, diphenylene group, or general formula (II). (However, R ¹ , R ² , R ³ and R ⁴ each independently represent hydrogen, a lower alkyl group, a lower alkoxy group or halogen, and Y is —O—, Or a group represented by —CH ₂ —).

In the general formula (I), p is a typical example of R.
-Phenylene group, m-phenylene group, diphenylene group,
General formula (III) (However, in the formula, Z is -O-, -S-, Is represented by the general formula (IV) A group represented by or a general formula (V) (However, in the formula, Z'is a bond, -O-, -S-, Represents a group).

The polyesterimide used in the present invention is produced, for example, as follows.

General formula (A) (In the formula, X represents the same divalent organic group as X in the general formula (I)) and a tetracarboxylic dianhydride containing an ester group and the general formula (B) H ₂ N—R—NH ₂ (B) A diamine represented by the formula (wherein R represents the same divalent organic group as R in the general formula (I)) can be obtained as a raw material.

The compound represented by the general formula (A) is described in Journal, Of, Polymer Science, Part A-1, Volume 4, 1531.
Page, (1966), a method of reacting trimellitic anhydride monochloride with dihydric phenol at room temperature or below, or trimellitic anhydride and dihydric phenol dimethyl ester at 200-300 ℃. It is synthesized by the method of reacting at high temperature.

Here, as the dihydric phenol as a raw material, hydroquinone, resorcinol, 4,4'-biphenol, 2,2 '
-Biphenol, 4,4'-dihydroxydiphenylmethane, 4,4'-dihydroxydiphenyl ether, 4,4'-
Dihydroxydiphenyl sulfone, 4,4'-dihydroxydiphenyl ketone, 4,4'-dihydroxydiphenyl sulfide, 2,2-bis- (4-hydroxyphenyl) propane, 2,2-bis- (4-hydroxy-3,5 -Dimethylphenyl) propane, 2,2-bis (4-hydroxy-3-methylphenyl) propane and the like.

The most typical examples of the compound represented by the general formula (A) include 2.2-bis (P-trimeritoxyphenyl) propane dianhydride (hereinafter abbreviated as BTPDA) and 2.2-bis (P-
Trimellitoxy-3,5-dimethylphenyl) propane 2
There is an anhydride (hereinafter abbreviated as BTTDA).

Examples of the diamine represented by the general formula (B) include m-phenylenediamine, P-phenylenediamine, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, 4,
4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-
Diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone,
4,4'-diaminobenzophenone, 4,4'-diaminodiphenylpropane, m-toluylenediamine, P-toluylenediamine, 3,3'-dichloro-4,4'-diaminodiphenylbenzidine, 4,4 ' -Diaminodiphenylamine, 4,4'-diaminodiphenyl-N-methylamine,
4,4'-diaminodiphenyl-N-phenylamine, 1,3
-Bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,4-bis (4-
Aminophenoxy) benzene, 2,2-bis [4- (4-
Aminophenoxy) phenyl] propane, 2,2-bis [3-methyl-4- (4-aminophenoxy) phenyl] propane, 2,2-bis [3-chloro-4- (4-aminophenoxy) phenyl] propane , 2,2-bis [3
-Promo-4- (4-aminophenoxy) phenyl] propane, 2,2-bis [3-ethyl-4- (4-aminophenoxy) phenyl] propane, 2,2-bis [3-propyl-4- ( 4-Aminophenoxy) phenyl] propane, 2,2-bis [3-isopropyl-4- (4-aminophenoxy) phenyl] propane, 2,2-bis [3-butyl-4- (4-aminophenoxy) phenyl ] Propane, 2,2-bis [3-sec-butyl-4- (4-aminophenoxy) phenyl] propane, 2,2-bis [3-methoxy-4- (4-aminophenoxy) phenyl] propane, 2 , 2-Bis [3-ethoxy-4- (4-aminophenoxy) phenyl] propane, 2,2-bis [3,5-dimethyl-4- (4-aminophenoxy) phenyl] propane, 2,2-bis [3,5-dichloro-4- ( -Aminophenoxy) phenyl] propane, 2,2-bis [3,5-dipromo-4- (4-aminophenoxy) phenyl] propane, 2,2-bis [3,5-dimethoxy-4- (4-amino) Phenoxy) phenyl] propane, 2,2-bis [3-chloro-4- (4-aminophenoxy) -5-methylphenyl] propane, 1,1-bis [4- (4-aminophenoxy) phenyl] ethane, 1,1-bis [3-methyl-4-
(4-Aminophenoxy) phenyl] ethane, 1,1-bis [3-chloro-4- (4-aminophenoxy) phenyl] ethane, 1,1-bis [3-promo-4- (4-aminophenoxy) Phenyl] ethane, 1,1-bis [3-ethyl-4- (4-aminophenoxy) phenyl] ethane, 1,1-bis [3-propyl-4- (4-aminophenoxy) phenyl] ethane, 1, 1-bis [3-isopropyl-4- (4-aminophenoxynophenyl] ethane, 1,1-bis [3-butyl-4- (4-aminophenoxy) phenyl] ethane, 1,1-bis [3- sec-Butyl-4- (4-aminophenoxy) phenyl] ethane, 1,
1-bis [3-methoxy-4- (4-aminophenoxy) phenyl] ethane, 1,1-bis [3-ethoxy-4
-(4-Aminophenoxy) phenyl] ethane, 1,1-
Bis [3.5-dimethyl-4- (4-aminophenoxy)
Phenyl] ethane, 1,1-bis [3.5-dichloro-4-
(4-Aminophenoxy) phenyl] ethane, 1,1-bis [3,5-dipromo-4- (4-aminophenoxy) phenyl] ethane, 1,1-bis [3,5-dimethoxy-4-]
(4-Aminophenoxy) phenyl] ethane, 1,1-bis [3-chloro-4- (4-aminophenoxy) phenyl-5-methylphenyl] ethane, bis [4- (4-aminophenoxy) phenyl] methane , Bis [3-methyl-4- (4-aminophenoxy) phenyl] methane, bis [3-chloro-4- (4-aminophenoxy) phenyl] methane, bis [3-promo-4- (4-aminophenoxy) ) Phenyl] methane, bis [3-ethyl-4-
(4-Aminophenoxy) phenyl] methane, bis [3
-Propyl-4- (4-aminophenoxy) phenyl]
Methane, bis [3-isopropyl-4- (4-aminophenoxy) phenyl] methane, bis [3-butyl-4-
(4-Aminophenoxy) phenyl] methane, bis [3
-Sec-butyl-4- (4-aminophenoxy) phenyl] methane, bis [3-methoxy-4- (4-aminophenoxy) phenyl] methane, bis [3-ethoxy-4
-(4-aminophenoxy) phenyl] methane, bis [3,5-dimethyl-4- (4-aminophenoxy) phenyl] methane, bis [3,5-dichloro-4- (4-aminophenoxy) phenyl] methane Bis [3,5-dipromo-4- (4-aminophenoxy) phenyl] methane,
Bis [3,5-dimethoxy-4- (4-aminophenoxy) phenyl] methane, bis [3-chloro-4- (4-
Aminophenoxy) -5-methylphenyl] methane, 1,
1,1,3,3,3-hexafluoro-2,2-bis [4- (4-aminophenoxy) phenyl] propane, 1,1,1,3,3,3-
Hexachloro-2,2-bis [4- (4-aminophenoxy) phenyl] propane, 3,3-bis [4- (4-aminophenoxy) phenyl] pentane, 1,1-bis [4-
(4-Aminophenoxy) phenyl] propane, 1,1,1,
3,3,3-hexafluoro-2,2-bis [3.5-dimethyl-
4- (4-aminophenoxy) phenyl] propane, 1,
1,1,3,3,3-hexachloro-2,2-bis [3.5-dimethyl-4- (4-aminophenoxy) phenyl] propane,
3.5-bis [3.5-dimethyl-4- (4-aminophenoxy) phenyl] pentane, 1,1-bis [3.5-dimethyl-
4- (4-aminophenoxy) phenyl] propane, 1,
1,1,3,3,3-hexafluorolo-2,2-bis [3.5-dipromo-4- (4-aminophenoxy) phenyl] propane, 1,1,1,3,3,3-hexachloro- 2,2-bis [3.5-dipromo-4- (4-aminophenoxy) phenyl] propane, 3,3bis [3.5-dipromo-4- (4-aminophenoxy) phenyl] pentane, 1,1-bis [3.5 -Dipromo-4- (4-aminophenoxy) phenyl] propane, 2,2-bis [4- (4-aminophenoxy) phenyl] butane, 2,2-bis [3-methyl-4- (4-aminophenoxy) ) Phenyl] butane, 2,2-bis [3.5-dimethyl-4- (4-aminophenoxy) phenyl] butane, 2,2-bis [3.5-dipromo-4- (4-aminophenoxy) phenyl] butane, 1 , 1,1,3,3,3-Hexafluoro-2,2-bis [3-methyl-4- (4-aminophen Noxy) phenyl] propane, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone, bis [4- (4
-Aminophenoxy) phenyl] ether, 1,1-bis [4- (4-aminophenoxy) phenyl] cyclohexane, 1,1-bis [4- (4-aminophenoxy) phenyl] cyclopentane, 4,4'- Carbonyl bis (P-
Examples include phenyleneoxy) dianiline, 4,4'-bis (4-aminophenoxy) biphenyl, 4,4'-diaminodiphenylethylsilane, and 4,4'-diaminodiphenylsilane.

Further, in the present invention, an aliphatic or alicyclic diamine,
You may use it in 0-30 mol% in a diamine component in the range which does not remarkably reduce the effect of this invention. Examples of such diamines include piperazine, hexamethylenediamine, heptamethylenediamine, tetramethylenediamine, P-xylylenediamine, m-xylylenediamine, and 3-methylheptamethylenediamine.

These diamines may be used alone or may be copolymerized.

As a polymerization method for obtaining the polyesterimide polymer of the present invention, a compound represented by the general formula (C) in a polar organic solvent is used. (Wherein X and R are the same as in the case of the general formula (I)), a polyester amic acid derivative represented by the general formula (I) is synthesized and isolated, and then imidized to obtain a polyester imide polymer represented by the general formula (I). A two-step synthetic method for obtaining a combined compound or completion of imidization in a polar organic solvent to give a compound of the general formula (I)
A one-step synthetic method for obtaining a polyimide polymer represented by

The two-step synthesis method will be described below.

A diamine is preferably used in an amount of 0.8 to 1.2 equivalents, more preferably 0.95 to 1.05 equivalents, relative to 1 equivalent of the dianhydride represented by the general formula (A), and N-methyl-2-pyrrolidone, dimethylacetamide, etc. 0 ° C in polar organic solvent
The polyamic acid derivative represented by the above general formula (C) is produced by reacting at 100 ° C., preferably in the range of 0 ° C. to 60 ° C., and the polyamic acid derivative represented by the general formula (I The polyimide polymer of the present invention represented by) can be produced.

The dehydration cyclization method includes (1) a method in which a polymer is once isolated and then cyclized by heat, (2) a method in which cyclization is performed by heat in a solution state, and (3) cyclization by a chemical dehydrating agent in a solution state. There is a method to make it. For the method of (1), see
Sluq (C, E, Sroog), Macromolecular synthesis (Macromoleculer, Synthesis) Collective Volume, Volume 1, p. 295 (1977) is described in detail, the heating temperature is 150 ~ 350 ℃ Good. (2)
In the method of 80-400 ℃, preferably 100-250 ℃
By heating the solution. At this time, it is preferable to use a solvent such as benzene, toluene and xylene, which is azeotropic with water. In the method (3), the reaction is carried out in the presence of a chemical dehydrating agent at 0 to 120 ° C, preferably 10 to 80 ° C. Examples of the chemical dehydrating agent include acid anhydrides such as acetic acid, propionic acid, lactic acid, benzoic acid, etc. At this time, it is preferable to use pyridine or the like together as a substance that accelerates the cyclization reaction.

Next, the one-step synthesis method will be described.

The diamine is preferably 0.8 to 1.2 equivalents, more preferably 1 equivalent to the dianhydride represented by the general formula (A).
0.95-1.05 equivalent is used, N-methyl-2-pyrrolidone,
0 ℃ ～ 100 in polar organic solvent such as dimethylacetamide
After reacting at ℃ for several tens of minutes to several days, at 40 ℃ ~ 30 ℃ for several tens of minutes to several days to complete imidization. When the reaction in the latter stage is carried out at 40 ° C. to 180 ° C., acetic anhydride 2 to 5 equivalents and pyridine 1 to 1 are added to promote imidization.
It is preferable to add 2 equivalents.

In order to obtain a high molecular weight polyimide polymer, it is preferable to mix the dianhydride and the diamine within the above range, and if the amount is out of this range, only a low molecular weight compound tends to be obtained.

The polyesterimide polymer of the present invention has a reduced viscosity of 0.3 to 3.0 dl / in a 0.2% by weight dimethylformamide solution at 30 ° C.
It is preferably g. If this reduced viscosity is too small, the film-forming property and mechanical strength will be reduced, and if it is too large, the heat fusion property when used as a bonding agent will be reduced.

The method for recovering the polyesterimide polymer or the polyesteramic acid derivative of the present invention is such that the reaction solution obtained as described above is compatible with lower alcohols such as methanol and ethanol and the above organic solvents such as water. The solvent, which is a poor solvent for the resin, may be poured in a large excess to obtain a precipitate, which may be filtered and dried.

Next, a method for forming a film-like joining member containing a polyesterimide polymer will be described.

First, the concentration is 0.01 to 30% by weight, preferably 0.1 to 10% by weight
A varnish is obtained by adjusting the polyesterimide solution or the polyesteramide acid solution. This may be used by diluting the reaction solution obtained by synthesis, or may be prepared by dissolving the polymer recovered by the above method. At this time,
Other resins can be added as needed. As the solvent, dimethyl sulfoxide, dimethyl ormamide,
Dimethylacetamide, N-methyl-2-pyrrolidone,
Dimethyl imidazolidinone tetrahydrofuran, dichloromethane, etc., or a mixed solution thereof can be used.

When the film-like joining member requires heat conductivity, the heat conductive filler is added to the resin in an amount of 0 depending on the required heat conductivity.
Can be mixed up to 80% by weight. If it exceeds this value, the heat fusion property deteriorates. The fillers that can be used are silver,
Gold, SiC, MgO, BN ₃ ,, Al ₂ O ₃ , carbon, BaSO ₄ ,, ZrO, SiO ₂ ,, Al, C
Inorganic powders such as u and Ni are listed.

Further, when the film-like joining member requires conductivity, the conductive filler can be mixed in 50 to 80% by weight with respect to the resin. If it is less than 50% by weight, the effect of imparting conductivity is small, and if it exceeds 80% by weight, the heat fusion property deteriorates. Examples of fillers that can be used include metal powders of silver, gold, Al, Cu, Ni and the like, and carbon powders.

Next, the varnish thus obtained is formed into a film on a suitable substrate such as a glass plate, and dried to remove the solvent to obtain a film. In addition, a film can be obtained by similarly forming a film using a varnish of a polyester amic acid derivative and further heating at 230 to 250 ° C. for 10 to 30 minutes in order to complete imidization. The film thus obtained is cut into a suitable size to obtain a film piece for bonding. The thickness of the film is preferably 10-100 μm.

There are the following methods for joining a semiconductor element to a supporting member in a semiconductor device using the film-like joining member of the present invention.

(1) The film-like joining member is placed on a support member, a semiconductor element is placed thereon, and heat treatment is performed.

(2) The film-like joining member is thermocompression-bonded to the supporting member to form a joining member layer on the supporting member, and the semiconductor element is placed on the joining member layer and heat-treated.

(3) A film-like joining member is thermocompression bonded to the joining surface of the semiconductor element to form the joining member on the joining surface of the semiconductor element,
This is placed on a support member and heat-treated.

The film-like joining member may be supplied to the joining step while cutting a ribbon-like member into an appropriate size.

After such a treatment, a sealing step is appropriately performed. Examples of the sealing method include resin sealing, glass sealing, and ceramic sealing.

An example of the semiconductor device thus obtained is shown in the drawing. The drawing is a cross-sectional view showing an example of a resin-encapsulated semiconductor device, in which a supporting member (lead frame) 1 and a joining member 2 are provided.
The semiconductor element 3 is bonded via the
The external lead wire 4 is wire-bonded by a wire 5. The whole is sealed with epoxy resin 6.

As the supporting member, those known as a substrate of a semiconductor device such as a metal supporting body (lead frame), a glass epoxy substrate, a ceramic substrate can be used.

<< Operation >> The film-like joining member according to the present invention has good heat-sealing property and excellent heat resistance. Therefore, sufficient bonding strength between the pellet and the lead frame is obtained, and wire bonding at high temperature is possible.

Furthermore, since the thickness of the bonding member on the lead frame can be made uniform, the manufactured semiconductor device can have high parallelism, and can reduce wire bonding defects and improve device reliability.

<< Examples >> Next, the present invention will be described based on Examples, but the present invention is not limited to these.

(Comparative Example 1) 10 parts by weight of polyether sulfone [VICTREX Imperial Chemical Industries], 15 parts by weight of silver powder (average particle size 1.2 μ) and 100 parts by weight of N-methylpyrrolidone are uniformly mixed. did. This composition was applied onto a glass plate and the solvent was removed by heating at 80 ° C. for 1 hour and 200 ° C. for 3 hours to obtain a film having a thickness of 30 μ.

(Comparative Example 2) 10 parts by weight of polysulfone (UDEL, manufactured by Union Carbide Corporation), silver powder (average particle diameter 1.2 μ) 2
0 parts by weight and 100 parts by weight of N-methylpyrrolidone were uniformly mixed. This composition was applied on a glass plate, and the solvent was removed by heating at 80 ° C. for 1 hour and 200 ° C. for 3 hours to obtain a bonding film having a thickness of 30 μm.

(Example 1) In a four-necked flask equipped with a thermometer, a stirrer, a nitrogen inlet tube, a moisture meter, and a cooling tube, 4.4'-bis [4-aminophenoxy) phenyl] sulfone 433 g (1.0 mol) and N were added.
-Add 2356 g of methyl-2-pyrrolidone and dissolve with stirring by passing nitrogen through. While continuing to stir at room temperature, BTPDA5
Add 76.5 g. The reaction is carried out at room temperature for 4 hours to synthesize polyamic acid, and then the temperature is raised to 180 ° C for 4 hours for 200 hours.
A ring-closing dehydration reaction was carried out at ℃. The obtained reaction liquid was poured into a large amount of methanol, the precipitate was filtered off, and dried under reduced pressure to obtain a polyesterimide polymer. Reduced viscosity of this polymer (ηsp / C, N-methylpyrrolidone, 0.2 wt% solution, 30 ° C
Was 0.56 dl / g. The glass transition temperature (Tg) of this polymer was measured and found to be 235 ° C.
Met.

10 parts by weight of this polymer, 20 parts by weight of silver powder (average particle size 1.2 μ) and 100 parts by weight of N-methylpyrrolidone were uniformly mixed. This composition is coated on a glass plate and kept at 80 ° C for 1 hour, 20
The solvent was removed by heating at 0 ° C. for 3 hours to obtain a bonding film having a thickness of 30 μm.

This polyester imide polymer is It has a repeating unit represented by

(Example 2) In Example 1, 433 g (1.0 mol) of 2.2-bis [4- (4-aminophenoxy) phenyl] sulfone was added to 4.4'-
A polyesterimide polymer was obtained in the same manner as in Example 1 except that 248 g (1.0 mol) of diaminodiphenyl sulfone was used. The reduced viscosity of this product was 0.48 dl / g. The glass transition temperature was 277 ° C.

This polyester imide polymer is It has a repeating unit represented by

In the same manner as in Example 1, a 30 μm-thick silver powder-containing bonding film was obtained.

(Example 3) A polyesterimide polymer was obtained in the same manner as in Example 1 except that 576.5 g of BTPDA was changed to 633 g of BTTDA. The reduced viscosity of this product was 0.65 dl / g. The glass transition point was 249 ° C.

This polyester imide polymer is It has a repeating unit represented by

In the same manner as in Example 1, a 30 μm-thick silver powder-containing bonding film was obtained.

(Example 4) In Example 1, 433 g of 2.2-bis [4- (4-aminophenoxy) phenyl] sulfone was mixed with 2.2-bis [4-
216 g of (4-aminophenoxy) phenyl] sulfone (0.
1 mol) and 4.4'-diaminodiphenyl sulfone 124 g
A polyesterimide polymer was obtained in the same manner as in Example 1 except that the amount was (0.5 mol). The reduced viscosity of this product is 0.
It was 53 dl / g. The glass transition temperature was 265 ° C.

In the same manner as in Example 1, a 30 μm-thick silver powder-containing bonding film was obtained.

(Example 5) In Example 1, the reaction was stopped when the polyamic acid was synthesized, and NMP was added and diluted so that the solid content was 10% by weight. Further, 20 parts by weight of silver powder (average particle size: 1.2 μ) was added to 10 parts by weight of the resin content in this varnish and mixed uniformly.

This polyester imide polymer is And the repeating unit It has a repeating unit represented by

In the same manner as in Example 1, a 30 μm-thick film containing silver powder was obtained. Further, it was heated at 230 to 250 ° C. for 30 minutes to complete imidization.

(Application Examples 1 to 7) The films obtained in Comparative Examples 1 and 2 and Examples 1 to 5 were cut into 5 mm square pieces, placed on a supporting member and heat-welded at 350 ° C. for 10 seconds, and then the semiconductor. Element (silicone chip 2mm square)
Was placed, and a load of 100 gw / cm ² was applied, and heat treatment was performed at 400 ° C. for 5 seconds to bond. The adhesive strength between the pellet and the supporting member was examined using the supporting member to which the obtained semiconductor element was joined. The results are shown in Table 1.

In the adhesive strength test, the support member to which the semiconductor element is joined is fixed horizontally on a heat block kept at 250 ° C or 300 ° C, and the push-pull gauge rod moves horizontally on the support member. This is a read of the scale of the push-pull gauge when the pellet was peeled off by pressing the side surface of the element.

In addition, although the supporting member to which the semiconductor element separately obtained in Application Examples 3 to 7 was sealed with epoxy resin to form a semiconductor device as shown in the drawing, there was no abnormality in the semiconductor element, and the heat cycle test was performed. But there was no abnormality.

The film-like joining members obtained in Examples 1 to 5 have excellent heat-sealing properties as is clear from the test results in Table 1, and excellent adhesiveness is maintained even at high temperatures.

Therefore, sufficient adhesive strength between the pellet and the substrate (for example, the lead frame) can be obtained, and wire bonding at high temperature is possible.

Furthermore, since the thickness of the bonding member on the substrate can be made uniform,
The manufactured semiconductor device has a high degree of parallelism, and can reduce defective wire bonding and improve the reliability of the element.

<< Effects of the Invention >> The film-like joining member according to the present invention has excellent heat-sealing properties and maintains excellent adhesiveness even at high temperatures.

[Brief description of drawings]

The drawing is a cross-sectional view showing an example of a resin-sealed semiconductor device. 1 ... Supporting member 2 ... Joining member 3 ... Semiconductor element 4 ... External lead wire 5 ... Wire 6 ... Epoxy resin

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshihiro Nomura 14 Goi Minami Coast, Ichihara City, Chiba Hitachi Gosei Co., Ltd.Goi Plant (72) Inventor Takashi Morinaga 14 Goi Minami Coast, Ichihara City, Chiba Hitachi Chemical Co., Ltd. Goi Factory Co., Ltd. (56) Reference JP-A-61-34085 (JP, A)

Claims (3)

[Claims] 1. A general formula (I) (However, in the formula, X and R each independently represent a divalent organic group) A film-like joining member containing an aromatic polyesterimide polymer having a repeating unit represented by the formula: 2. In general formula (I), X is p-phenylene group, m-phenylene group, diphenylene group, or general formula (II). (However, R ¹ , R ² , R ³ and R ⁴ each independently represent hydrogen, a lower alkyl group, a lower alkoxy group or halogen, and Y is —O—, Or -CH ₂ - filmy bonding member groups in which the claims claim 1 wherein represented by shown). 3. In the general formula (I), R is p-phenylene group, m-phenylene group, diphenylene group, general formula (II
I) (However, in the formula, Z is -O-, -S-, Is represented by the general formula (IV) A group represented by or a general formula (V) (However, in the formula, Z'is a bond, -O-, -S-, The film-like joining member according to claim 1 or 2, which is a group represented by