JPH0788566B2 - Continuous vacuum deposition or ion plating method on metal strip characterized by performing pretreatment of ion beam irradiation - Google Patents
Continuous vacuum deposition or ion plating method on metal strip characterized by performing pretreatment of ion beam irradiationInfo
- Publication number
- JPH0788566B2 JPH0788566B2 JP6626089A JP6626089A JPH0788566B2 JP H0788566 B2 JPH0788566 B2 JP H0788566B2 JP 6626089 A JP6626089 A JP 6626089A JP 6626089 A JP6626089 A JP 6626089A JP H0788566 B2 JPH0788566 B2 JP H0788566B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- ion beam
- metal strip
- ion
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002184 metal Substances 0.000 title claims description 57
- 238000010884 ion-beam technique Methods 0.000 title claims description 35
- 238000007733 ion plating Methods 0.000 title claims description 10
- 238000001771 vacuum deposition Methods 0.000 title claims description 4
- 230000004907 flux Effects 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 description 51
- 229910000831 Steel Inorganic materials 0.000 description 16
- 239000010959 steel Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000005275 alloying Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229920000298 Cellophane Polymers 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は金属帯を加熱することなしに、連続的に金属帯
に金属または合合物を密着性よく真空蒸着またはイオン
プレーティングする方法に関する。TECHNICAL FIELD The present invention relates to a method for continuously vacuum-depositing or ion-plating a metal or a compound on a metal strip with good adhesion without heating the metal strip. .
従来、走行する金属帯に金属または化合物を真空蒸着ま
たはイオンプレーティングする場合に、その良好な密着
性を得るためには、１）金属帯を蒸着前に電子ビーム、
光などで真空中で加熱し表面のH2Oなどの吸着分子を熱
脱離させ、さらにその熱によって金属帯の表面に存在す
る酸化層と蒸着層との間に拡散層をつくる、２）放電ク
リーニングなどのように放電室でプラズマによって金属
帯の表面の酸化層を除去した後、蒸着室まで真空中を搬
送し蒸着する、３）イオンビームの照射によって金属帯
の表面の酸化層を除去した後、蒸着室まで真空中を搬送
し蒸着する、ことを行っている。Conventionally, when a metal or a compound is vacuum-deposited or ion-plated on a running metal strip, in order to obtain good adhesion thereof, 1) an electron beam is applied to the metal strip before vapor deposition,
By heating in vacuum with light, the adsorbed molecules such as H 2 O on the surface are thermally desorbed, and by the heat, a diffusion layer is formed between the oxide layer and the vapor deposition layer existing on the surface of the metal band 2). After removing the oxide layer on the surface of the metal band by plasma in the discharge chamber such as discharge cleaning, carry it in vacuum to the deposition chamber for vapor deposition, and 3) remove the oxide layer on the surface of the metal band by irradiation with an ion beam. After that, it is carried out in a vacuum to a vapor deposition chamber for vapor deposition.
電子ビーム、光などで金属帯を加熱することによって密
着性を得ようとする場合、蒸着中に蒸着粒子の凝縮熱、
ルツボからの輻射熱、イオンプレーティングの場合には
蒸着粒子の運動エネルギーなどによって金属帯の温度は
蒸着開始初期より上昇する。その金属帯の温度上昇によ
って金属帯と蒸着層界面の合金化、合金化による密着性
の悪化、金属帯および蒸着層の相互の拡散による不純物
元素の増加、金属帯および蒸着層の組織の変化などが生
じる。例えば鋼帯にAlを蒸着する場合、鋼帯を200℃以
上に加熱すると密着性は良好になるが、鋼帯が最終的に
500℃以上になると合金層の形成により密着性が低下す
る。Al帯にAlNを蒸着する場合、Al帯が高温になるとＮ
がAl帯中に拡散しその機械的特性が劣化する。When trying to obtain adhesion by heating a metal strip with an electron beam, light, etc., the heat of condensation of vapor deposition particles during vapor deposition,
The temperature of the metal band rises from the initial stage of vapor deposition due to the radiant heat from the crucible and the kinetic energy of vapor deposition particles in the case of ion plating. The temperature rise of the metal band causes alloying of the interface between the metal band and the vapor deposition layer, deterioration of adhesion due to alloying, increase of impurity elements due to mutual diffusion of the metal band and the vapor deposition layer, change in structure of the metal band and vapor deposition layer, etc. Occurs. For example, when Al is vapor-deposited on a steel strip, heating the steel strip to 200 ° C or higher will improve the adhesion, but
When the temperature is 500 ° C or higher, the adhesion is lowered due to the formation of the alloy layer. When AlN is vapor-deposited on the Al band, if the Al band becomes hot, N
Diffuses into the Al zone and its mechanical properties deteriorate.
また、放電クリーニングまたはイオンビームのスパータ
リング効果によって金属帯の表面の酸化層および汚染層
を清浄化した後蒸着する場合においても、清浄化後、蒸
着室または蒸着部へ金属帯を搬送する間に真空中の残留
ガスの吸着および化合によって表面酸化および汚染され
るため、結局は密着性を得るために金属帯を加熱し蒸着
開始時の温度を上げなければならない。そのため、本質
的には上に述べた、金属帯を加熱した後に蒸着する場合
に生じる問題は解決されない。例えば鋼帯にCuを蒸着す
る場合、蒸着前に放電クリーニングを行っても鋼帯を35
0℃以上に加熱しないと良好な密着性は得られない。し
かし蒸着中に鋼帯の温度が450℃以上になると蒸着層のC
uの再結晶が生じ外観が悪化する。Even when the oxide layer and the contaminated layer on the surface of the metal strip are cleaned by discharge cleaning or the sputtering effect of the ion beam before vapor deposition, the metal strip may be transported to the vapor deposition chamber or the vapor deposition section after cleaning. Since the surface is oxidized and contaminated by the adsorption and combination of the residual gas in the vacuum, it is necessary to heat the metal strip to raise the temperature at the start of vapor deposition in order to obtain adhesion. This essentially does not solve the problems mentioned above, which occur when the metal strip is heated and then deposited. For example, when Cu is vapor-deposited on a steel strip, even if discharge cleaning is performed before vapor deposition, the steel strip will not be
Good adhesion cannot be obtained unless it is heated above 0 ° C. However, if the temperature of the steel strip rises above 450 ° C during vapor deposition, C
Recrystallization of u occurs and the appearance deteriorates.
蒸着中には上に述べたように必然的に金属帯の温度が上
昇することから、以上の問題を解決するためには蒸着開
始時の金属帯の温度を下げることが必要である。Since the temperature of the metal strip inevitably rises during vapor deposition as described above, it is necessary to lower the temperature of the metal strip at the start of vapor deposition in order to solve the above problems.
本発明は走行する金属帯に金属または化合物を真空蒸着
またはイオンプレーティングする場合、金属帯を加熱す
ることなく良好な密着性を得る製造方法を提供すること
を目的としている。It is an object of the present invention to provide a production method for obtaining good adhesion without heating a metal strip when vacuum-depositing or ion plating a metal or a compound on a running metal strip.
発明者は、金属帯を真空蒸着またはイオンプレーティン
グする際、金属帯との良好な密着性を得るため高温にす
ると界面の合金化、不純物元素の拡散、金属帯および蒸
着層の組織変化が生ずる問題を解決すべく研究を重ねた
結果、前処理として使用するイオンビームのイオンビー
ム束の前方端部と蒸着蒸気流束の後方端部を重畳するこ
により、金属帯の表面の酸化層および汚染層がイオンビ
ームのスパッタリング効果によって除去され、蒸着時ま
でその清浄化された金属帯の表面に残留ガスが吸着また
は化合することがなく、清浄化されたまま蒸着粒子を蒸
着することが可能になり、金属帯表面と蒸着粒子すなわ
ち蒸着層とが直接反応することが可能になり、金属帯が
低温であっても蒸着層と金属帯の密着性が良好になるこ
とを知見した。The inventor has found that when vacuum-depositing or ion-plating a metal strip, if the temperature is raised to obtain good adhesion with the metal strip, alloying of the interface, diffusion of impurity elements, and change in structure of the metal strip and the vapor deposition layer occur. As a result of repeated research to solve the problem, the front end of the ion beam flux of the ion beam used as a pretreatment and the rear end of the vapor deposition vapor flux are overlapped to each other, so that the oxide layer and the contamination on the surface of the metal band are contaminated. The layer is removed by the sputtering effect of the ion beam, and residual gas is not adsorbed or combined on the surface of the cleaned metal strip until the time of deposition, and it is possible to deposit the deposited particles while being cleaned. It has been found that the surface of the metal strip can directly react with the vapor deposition particles, that is, the vapor deposition layer, and the adhesion between the vapor deposition layer and the metal strip is improved even when the metal strip is at a low temperature.
本明細書の記載において、前方とは金属帯の走行方向を
意味し、後方とはその反対方向を意味する。In the description of the present specification, the front means the traveling direction of the metal strip, and the rear means the opposite direction.
本発明は、連続して走行する金属帯に金属または化合物
を、真空蒸着またはイオンプレーティングによって被覆
する際に、前処理としてイオンビーム照射を用いる方法
において：被覆手段（蒸着手段またはイオンプレーティ
ング手段）の後方に近接してイオン源を配置し、被覆物
質流束の後端部とイオンビーム束の前端部とが重畳する
ようにイオンビームを照射する真空蒸着またはイオンプ
レーティング方法を提供する。The present invention provides a method of using ion beam irradiation as a pretreatment for coating a continuously running metal strip with a metal or a compound by vacuum deposition or ion plating: coating means (deposition means or ion plating means) ) Is provided in the vicinity of the rear of the ion source, and the ion deposition is performed by irradiating the ion beam so that the rear end of the coating substance flux and the front end of the ion beam flux overlap each other.
イオンビームの入射角は任意でよいが、スパッタリング
によるクリーニング効果を高めるため、および、蒸着手
段との干渉を避けるため、入射角は金属帯に対して５゜
〜90゜で、45゜〜75゜が望ましい。イオンビームとして
は全ての元素および分子のイオンビームにスパッタリン
グによるクリーニング効果が期待できるのでイオンビー
ムの種類に制限はない。The angle of incidence of the ion beam may be arbitrary, but in order to enhance the cleaning effect by sputtering and to avoid interference with the vapor deposition means, the angle of incidence is 5 ° to 90 ° with respect to the metal strip, and 45 ° to 75 °. Is desirable. As for the ion beam, the cleaning effect by sputtering can be expected for the ion beams of all elements and molecules, and therefore the type of ion beam is not limited.
金属帯の表面に酸化層および汚染層がイオンビームのス
パッタリング効果によって除去され、さらにイオンビー
ム束の前端部と被覆物質の流束の後端部が重畳している
ため、蒸着時までその清浄化された金属帯の表面に残留
ガスが吸着または化合することなく、清浄化されたまま
被覆物質を蒸着することが可能になる。このことによっ
て金属帯表面と蒸着物質すなわち蒸着層とが直接反応す
ることが可能になり金属帯が低温であっても蒸着層と金
属帯の密着性が良好になる。The oxide layer and the contamination layer are removed on the surface of the metal band by the sputtering effect of the ion beam, and the front end of the ion beam flux and the rear end of the flux of the coating material are superposed, so that they can be cleaned up to the time of vapor deposition. It is possible to deposit the coating material as it is cleaned without the residual gas adsorbing or combining on the surface of the metal strip. As a result, the surface of the metal strip and the vapor deposition material, that is, the vapor deposition layer can directly react with each other, and the adhesion between the vapor deposition layer and the metal strip is improved even when the metal strip is at a low temperature.
イオンビーム束の端部と被覆物質流束の端部が重畳して
いるためイオンビームが蒸着粒子に衝突し金属帯表面に
蒸着粒子がミキシングされる場合がある。本発明ではそ
のようなミキシング効果は全く必要でない。ミキシング
効果が存在するような条件では真空中の残留ガスもミキ
シングされかえって密着性に悪影響を及ぼす場合があ
る。Since the end of the ion beam flux and the end of the coating substance flux overlap, the ion beam may collide with the vapor deposition particles and the vapor deposition particles may be mixed with the surface of the metal band. In the present invention no such mixing effect is required. Under conditions where a mixing effect exists, residual gas in a vacuum may also be mixed and adversely affect the adhesion.
本発明を実施例について説明する。 The present invention will be described with reference to examples.
実施例 第１図に本発明を実施するためのイオンビームガンを備
えた金属帯蒸着装置を示す。ペイオフリール（１）から
送り出された金属帯（２）は蒸着室（10）内に入り、イ
オンビームガン（５）よりのイオンビーム束（６）の照
射を受け表面の酸化層および汚染層が除去され、そして
イオンビーム束（６）とルツボ（８）からの被覆物質流
束（９）による蒸着粒子の重畳部（７）を経て蒸着さ
れ、その後テンションリール（３）に巻きとられる。必
要に応じて金属帯（２）を冷却ロール（４）で冷却す
る。蒸着としては、通常の真空蒸着または化合物を蒸着
のためのイオンプレーティングが適用できる。金属帯
（２）の温度は赤外線放射温度計（11）により測定す
る。EXAMPLE FIG. 1 shows a metal band vapor deposition apparatus equipped with an ion beam gun for carrying out the present invention. The metal strip (2) sent from the payoff reel (1) enters the vapor deposition chamber (10) and is irradiated with the ion beam bundle (6) from the ion beam gun (5) to remove the oxide layer and the contamination layer on the surface. Then, the ion beam bundle (6) and the coating material flux (9) from the crucible (8) are used for vapor deposition through the overlapping portion (7) of the vapor deposition particles, and then wound on the tension reel (3). The metal strip (2) is cooled by a cooling roll (4) as required. As the vapor deposition, general vacuum vapor deposition or ion plating for vapor deposition of a compound can be applied. The temperature of the metal strip (2) is measured by an infrared radiation thermometer (11).
次に鋼帯にCuを真空蒸着することによってイオンビーム
束と蒸着粒子束の重量部の効果を調査した実施例を記
す。Next, an example of investigating the effects of the weight part of the ion beam flux and the vapor deposition particle flux by vacuum-depositing Cu on the steel strip will be described.
第２図に示す装置によって、鋼帯として低炭素鋼を用
い、それを0.2〜6m/minの速度で走行させ、イオンビー
ムとしては10kevのArイオンビームを用い45゜の角度で
照射した。Cuは電子ビーム蒸着によって５×10-5Torrの
真空中で３μｍに蒸着した。重畳部にイオンビームおよ
び蒸着粒子を遮る遮蔽板（12）を20cmの間隔をあけて２
枚設けてイオンビーム照射と蒸着の間に全くイオンも蒸
着粒子を飛来しない領域をつくった。イオンおよび蒸着
粒子が全く飛来しない領域を通過する時間、すなわち表
面清浄化後蒸着まで真空中を走行する時間を走行速度を
変えることによって変化させ、その時間と密着性の関係
を調べた。第１表に遮蔽部走行時間、鋼帯の走行速度お
よび蒸着直前の鋼帯の温度を示す。０秒は遮蔽板を取り
外し重畳部をつくった状態を示す。第３図に結果を示
す。密着性は鋼板を180゜に折り曲げその折り曲げ部に
セロハンテープを貼りそれを折り曲げ部から剥して調
べ、第２表に示す５段階の基準で密着性を評価した。第
３図から重畳部が存在すると鋼帯温度が低温であるにも
かかわらず密着性が良好（密着性５）になることがわか
る。従来のイオンビームを用いない方法ではCuを鋼帯に
蒸着する場合、鋼帯の温度を第４図に示すように350℃
以上に加熱しないと良好な密着性は得られない。この場
合、鋼帯の走行速度を6m/minとし５×10-5Torrの真空中
で３μｍ蒸着した。Using the apparatus shown in FIG. 2, low carbon steel was used as a steel strip, which was run at a speed of 0.2 to 6 m / min, and an Ar ion beam of 10 kev was used as an ion beam for irradiation at an angle of 45 °. Cu was evaporated to a thickness of 3 μm in a vacuum of 5 × 10 −5 Torr by electron beam evaporation. A shield plate (12) for shielding the ion beam and vapor deposition particles is placed in the overlapping portion with a space of 20 cm.
A single piece was provided to create a region in which no ion flies vapor deposition particles during ion beam irradiation and vapor deposition. By changing the running speed, the time to pass through the region where ions and vapor-deposited particles do not fly at all, that is, the time to travel in vacuum after surface cleaning until vapor deposition was changed, and the relationship between the time and adhesion was investigated. Table 1 shows the traveling time of the shielding part, the traveling speed of the steel strip, and the temperature of the steel strip immediately before vapor deposition. At 0 seconds, the shielding plate is removed and the overlapping portion is formed. The results are shown in FIG. The adhesion was examined by bending the steel plate at 180 °, applying a cellophane tape to the bent portion and peeling it off from the bent portion, and evaluated the adhesion on the basis of the five grades shown in Table 2. It can be seen from FIG. 3 that the presence of the superposed portion provides good adhesion (adhesion 5) even though the steel strip temperature is low. When Cu is vapor-deposited on the steel strip by the conventional method without using the ion beam, the temperature of the steel strip is 350 ° C as shown in Fig. 4.
If it is not heated above, good adhesion cannot be obtained. In this case, the traveling speed of the steel strip was set to 6 m / min, and vapor deposition was performed at 3 μm in a vacuum of 5 × 10 −5 Torr.
〔発明の効果〕 本発明は以下に記載される効果がある。 [Effects of the Invention] The present invention has the effects described below.
真空蒸着あるいはイオンプレーティングの前処理として
使用するイオンビームのイオンビーム束の前端部と蒸着
粒子束の後端部が重畳しているため、イオンビームによ
って清浄化された金属帯の表面は、真空中の残留ガスに
よって酸化あるいは汚染されることなく清浄化されたま
まで蒸着される。そのため密着性を得るために金属帯の
温度を上げる必要がなくなる。Since the front end of the ion beam flux of the ion beam used as a pretreatment for vacuum deposition or ion plating and the rear end of the vapor deposition particle flux overlap, the surface of the metal band cleaned by the ion beam is vacuum. It is deposited while being cleaned without being oxidized or contaminated by the residual gas therein. Therefore, it is not necessary to raise the temperature of the metal strip to obtain the adhesiveness.
このことによって界面の合金化、不純物元素の拡散、金
属帯および蒸着層の組織変化など金属帯が高温となる場
合に生じる問題が解決される。This solves the problems that occur when the temperature of the metal band becomes high, such as alloying of the interface, diffusion of impurity elements, and changes in the structure of the metal band and the vapor deposition layer.
第１図はイオンビームガンを備えた金属帯蒸着装置の構
成を示す図、第２図は第１図の装置に２枚の遮蔽板を取
り付けたことを示す図、第３図はイオンビームで清浄化
処理後、蒸着まで真空中を金属帯が走行する時間と蒸着
層と金属帯との間の密着性の関係を示す図、第４図は鋼
帯を加熱してCuを蒸着した場合の蒸着直前の鋼帯温度と
密着性の関係を示す図である。 １……ペイオフリール、２……金属帯、３……テンショ
ンリール、４……冷却ロール、５……イオンビームガ
ン、６……イオンビーム束、７……重畳部、８……ルツ
ボ、９……被覆物質束、10……蒸着室、11……赤外線放
射温度計、12……遮蔽板。FIG. 1 is a diagram showing the structure of a metal strip vapor deposition device equipped with an ion beam gun, FIG. 2 is a diagram showing two shield plates attached to the device of FIG. 1, and FIG. Fig. 4 is a diagram showing the relationship between the time during which the metal strip travels in a vacuum and the adhesion between the vapor deposition layer and the metal strip after the chemical treatment, and Fig. 4 is the vapor deposition when the steel strip is heated to deposit Cu. It is a figure which shows the relationship between the immediately preceding steel strip temperature and adhesiveness. 1 ... Pay-off reel, 2 ... Metal strip, 3 ... Tension reel, 4 ... Cooling roll, 5 ... Ion beam gun, 6 ... Ion beam bundle, 7 ... Superimposing section, 8 ... Crucible, 9 ... … Coating substance bundle, 10 …… Deposition chamber, 11 …… Infrared radiation thermometer, 12 …… Shielding plate.
Claims (1)
物を真空蒸着またはイオンプレーティングによって被覆
する際に、前処理としてイオンビーム照射を用いる方法
において：被覆手段の後方に近接してイオン源を配置
し、被覆物質流束の後端部とイオンビーム束の前端部と
が重畳するようにイオンビームを照射することを特徴と
する真空蒸着またはイオンプレーティング方法。1. A method using ion beam irradiation as a pretreatment for coating a continuously running metal strip with a metal or a compound by vacuum deposition or ion plating: an ion source in the vicinity of the rear of the coating means. And irradiating the ion beam so that the rear end of the coating substance flux and the front end of the ion beam flux are overlapped with each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6626089A JPH0788566B2 (en) | 1989-03-20 | 1989-03-20 | Continuous vacuum deposition or ion plating method on metal strip characterized by performing pretreatment of ion beam irradiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6626089A JPH0788566B2 (en) | 1989-03-20 | 1989-03-20 | Continuous vacuum deposition or ion plating method on metal strip characterized by performing pretreatment of ion beam irradiation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02247371A JPH02247371A (en) | 1990-10-03 |
| JPH0788566B2 true JPH0788566B2 (en) | 1995-09-27 |
Family
ID=13310712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6626089A Expired - Lifetime JPH0788566B2 (en) | 1989-03-20 | 1989-03-20 | Continuous vacuum deposition or ion plating method on metal strip characterized by performing pretreatment of ion beam irradiation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0788566B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04143276A (en) * | 1990-10-05 | 1992-05-18 | Kobe Steel Ltd | Production of cu alloy plated material by vacuum deposition |
| EP0572673B1 (en) * | 1991-11-21 | 1997-06-25 | Nisshin Steel Co., Ltd. | Method of forming layer of evaporation coating |
| US6294479B1 (en) * | 1992-05-21 | 2001-09-25 | Nissin Electric Co., Ltd | Film forming method and apparatus |
| JP2911102B2 (en) * | 1995-02-28 | 1999-06-23 | 中外炉工業株式会社 | Pretreatment method for forming thin film made of copper, aluminum or alloy thereof |
| JP2012201980A (en) | 2011-03-28 | 2012-10-22 | Jx Nippon Mining & Metals Corp | Metal foil with electric resistive layer and method for producing the same |
| KR102135219B1 (en) * | 2020-04-14 | 2020-07-17 | (주)제이에스에스 | Coating system for mask frame with structure of standing road and ion beam |
-
1989
- 1989-03-20 JP JP6626089A patent/JPH0788566B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02247371A (en) | 1990-10-03 |
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