JPH0791075B2 - Molds for glass optical elements - Google Patents
Molds for glass optical elementsInfo
- Publication number
- JPH0791075B2 JPH0791075B2 JP33031693A JP33031693A JPH0791075B2 JP H0791075 B2 JPH0791075 B2 JP H0791075B2 JP 33031693 A JP33031693 A JP 33031693A JP 33031693 A JP33031693 A JP 33031693A JP H0791075 B2 JPH0791075 B2 JP H0791075B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- plane
- silicon carbide
- deposition layer
- molding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011521 glass Substances 0.000 title claims description 14
- 230000003287 optical effect Effects 0.000 title claims description 12
- 238000000465 moulding Methods 0.000 claims description 36
- 238000007740 vapor deposition Methods 0.000 claims description 24
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 23
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 21
- 238000002441 X-ray diffraction Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003908 quality control method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B11/00—Pressing molten glass or performed glass reheated to equivalent low viscosity without blowing
- C03B11/06—Construction of plunger or mould
- C03B11/08—Construction of plunger or mould for making solid articles, e.g. lenses
- C03B11/084—Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor
- C03B11/086—Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor of coated dies
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2215/00—Press-moulding glass
- C03B2215/02—Press-mould materials
- C03B2215/03—Press-mould materials defined by material properties or parameters, e.g. relative CTE of mould parts
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2215/00—Press-moulding glass
- C03B2215/02—Press-mould materials
- C03B2215/08—Coated press-mould dies
- C03B2215/14—Die top coat materials, e.g. materials for the glass-contacting layers
- C03B2215/22—Non-oxide ceramics
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、レーザ機器,カメラ,
顕微鏡,望遠鏡,光ファイバー用機器等に使用されるレ
ンズ,プリズム等の各種ガラス製光学素子をワンモール
ド成形するための成形型に関するものである。The present invention relates to a laser device, a camera,
The present invention relates to a mold for one-mold molding of various glass optical elements such as lenses and prisms used in microscopes, telescopes, optical fiber devices and the like.
【0002】[0002]
【従来の技術】従来、カメラレンズ等を製作するには、
ガラス材を所定形状に型成形する工程の他、その成形物
の形状,精度を確保するための下地研磨工程やその研磨
物の表面を仕上げる仕上研磨工程等、多くの工程が必要
であった。したがって、かかる伝統的な製作方法によれ
ば、レンズ等を安価且つ大量に製作することができず、
また非球面形状のものを得ることが困難であった。2. Description of the Related Art Conventionally, to manufacture a camera lens or the like,
In addition to the step of molding the glass material into a predetermined shape, many steps such as a base polishing step for ensuring the shape and accuracy of the molded article and a finish polishing step for finishing the surface of the polished article were required. Therefore, according to such a traditional manufacturing method, lenses and the like cannot be manufactured inexpensively and in large quantities,
Further, it has been difficult to obtain an aspherical shape.
【0003】そこで、近時、レンズ等を精密プレス型に
よりワンモールド成形することが行われており、これに
使用する成形型としては、型本体の型部表面に、耐熱
性,熱伝導性,堅牢性等に極めて優れる炭化珪素の化学
蒸着層を形成し、その層表面を研磨してなるもの(以下
「従来型」という)が提案されている。なお、型全体を
光学ガラスとの反応性が低い非酸化物系セラミック材
(SiC,Si3 N4 ,WC等)で構成したものも提案
されているが、耐久性等において問題があり、型寿命が
短く、レンズ等の製作を安価に行い得ない。Therefore, recently, one-mold molding of lenses and the like has been performed by a precision press mold. As a mold used for this, heat resistance, heat conductivity, It has been proposed to form a chemically vapor-deposited layer of silicon carbide having extremely excellent robustness and the like and polish the surface of the layer (hereinafter referred to as "conventional type"). It is to be noted that, although a mold in which the whole mold is made of a non-oxide ceramic material (SiC, Si 3 N 4 , WC, etc.) having low reactivity with the optical glass has been proposed, there is a problem in durability etc. It has a short life and cannot be manufactured inexpensively.
【0004】[0004]
【発明が解決しようとする課題】ところで、ワンモール
ド成形によって高品質のガラス製光学素子を製作するに
は、成形面である蒸着層表面を、RMS粗さを10Å以
下(より好ましくは5Å以下)とした超平滑面に研磨し
ておくことが必要であり、このような表面研磨は、一般
に、微細なダイヤモンド砥粒により蒸着層表面を慎重に
磨いていくことによって行われる。By the way, in order to manufacture a high-quality optical element made of glass by one-mold molding, the surface of the vapor deposition layer, which is the molding surface, has an RMS roughness of 10Å or less (more preferably 5Å or less). It is necessary to polish it to a super smooth surface, and such surface polishing is generally performed by carefully polishing the surface of the vapor deposition layer with fine diamond abrasive grains.
【0005】しかし、従来型においては、蒸着層の結晶
面が無配向又は弱配向されているため、蒸着層表面を上
記した如き超平滑面に研磨することが極めて困難であっ
た。However, in the conventional type, since the crystal plane of the vapor deposition layer is non-oriented or weakly oriented, it is extremely difficult to polish the surface of the vapor deposition layer to the above-mentioned ultra-smooth surface.
【0006】すなわち、通常の成膜条件下で炭化珪素の
化学蒸着を行った場合、蒸着層の結晶面は無配向となる
か、ミラー指数表示における(111)面に弱配向され
る傾向にある。このような無配向又は弱配向の蒸着層で
は、結晶方位の違いによる研磨性が一様とならず、結晶
間段差劈が生じるため、高度な平滑面を得ることができ
ない。例えば、(111)面は、他の方位面に比して原
子密度が極めて高く、表面の化学的活性度が極めて低い
こと等から、上記した如く表面研磨を行った場合、他の
方位面部分の方が早く且つ深く削り取られることにな
り、多くのピットが発生することになる。このようなピ
ットは、研磨を如何に入念に行っても消失させることが
できず、上記した如き超平滑面を得ることは極めて困難
である。That is, when chemical vapor deposition of silicon carbide is performed under normal film forming conditions, the crystal plane of the vapor deposition layer tends to be non-oriented or weakly oriented to the (111) plane in the Miller index display. . In such a non-oriented or weakly oriented vapor-deposited layer, the polishing property due to the difference in crystal orientation is not uniform, and a step difference between crystals is generated, so that a highly smooth surface cannot be obtained. For example, the (111) plane has a very high atomic density and a very low chemical activity on the surface as compared with other azimuth planes. Will be cut faster and deeper, and more pits will be generated. Such pits cannot be eliminated no matter how carefully polishing is performed, and it is extremely difficult to obtain a super smooth surface as described above.
【0007】また、結晶面が無配向又は弱配向である
と、蒸着層表面における熱伝導率が一様とならず、成形
時において成形面に大きな熱歪が生じる虞れがある。さ
らには、型成形時においてガラスとの反応により成形面
が劣化するような場合には、その劣化程度が一様となら
ない。したがって、成形品の精度にバラツキが生じ易
く、品質管理が極めて困難である。Further, if the crystal plane is non-oriented or weakly oriented, the thermal conductivity on the surface of the vapor-deposited layer is not uniform, and there is a possibility that a large thermal strain will occur on the shaping surface during shaping. Furthermore, when the molding surface is deteriorated by the reaction with glass during molding, the deterioration degree is not uniform. Therefore, the precision of the molded product is likely to vary, and quality control is extremely difficult.
【0008】本発明は、このような点に鑑み、蒸着層表
面を超平滑面に研磨しておくことができ、高品質のガラ
ス製光学素子を精度的なバラツキを生じさせることなく
安価に大量生産することができる成形型を提供すること
を目的とするものである。In view of the above points, the present invention makes it possible to polish the surface of the vapor-deposited layer to an ultra-smooth surface, and to produce high-quality glass optical elements inexpensively in large quantities without causing precision variations. The object is to provide a mold that can be produced.
【0009】[0009]
【課題を解決するための手段】本発明は、型本体の型部
の表面に炭化珪素の化学蒸着層を形成してなるガラス製
光学素子用の成形型において、上記の目的を達成すべ
く、特に、炭化珪素蒸着層における結晶面を、ミラー指
数表示における(220)面に強配向せしめておくこと
を提案するものである。この炭化珪素蒸着層において
は、(220)面のX線回折強度が、他の如何なる結晶
面に対しても100倍以上(より好ましくは500倍以
上)となるようにしておくことが好ましい。The present invention provides a molding die for a glass optical element, which comprises a chemical vapor deposition layer of silicon carbide formed on the surface of a die portion of a die body, in order to achieve the above object. In particular, it is proposed that the crystal plane in the silicon carbide vapor deposition layer is strongly oriented to the (220) plane in the Miller index display. In this silicon carbide deposited layer, the X-ray diffraction intensity of the (220) plane is preferably 100 times or more (more preferably 500 times or more) that of any other crystal plane.
【0010】[0010]
【作用】蒸着層の結晶面が(220)面に強配向されて
いるから、無配向,弱配向となっている場合と異なっ
て、研磨性が一様となり、超平滑面に研磨することがで
きる。しかも、(220)面は(111)面に比して原
子密度が小さく、表面の化学的不活性度も小さいことか
ら、(111)面に強配向させた場合や(111)面が
混在する無配向,弱配向の場合に比して、成形面をより
少ない研磨エネルギーにより容易に表面研磨することが
できる。したがって、成形面をかかる超平滑面とした成
形型によれば、表面が高度に滑らかなガラス製光学素子
を良好にワンモールド成形することができる。Since the crystal plane of the vapor-deposited layer is strongly oriented to the (220) plane, the polishing property becomes uniform and polishing to an ultra-smooth surface is possible, unlike the case where the crystal plane is not oriented or weakly oriented. it can. Moreover, since the (220) plane has a lower atomic density and a lower chemical inertness than the (111) plane, when strongly oriented to the (111) plane or when the (111) plane is mixed. Compared with the case of non-orientation and weak orientation, the molding surface can be easily surface-polished with less polishing energy. Therefore, according to the molding die in which the molding surface has such an ultra-smooth surface, the glass optical element having a highly smooth surface can be favorably one-mold molded.
【0011】また、蒸着層の結晶面が特定の方位面に強
配向されているから、成形面の熱伝導率が一様となり、
成形時に発生する熱歪が極めて小さくなる。しかも、成
形時におけるガラスとの反応により成形面が劣化するよ
うな場合にも、その劣化が一様となる。したがって、成
形品の精度にバラツキが殆ど生じず、品質管理が極めて
容易となる。Further, since the crystal plane of the vapor deposition layer is strongly oriented in a specific azimuth plane, the thermal conductivity of the molding surface becomes uniform,
The thermal strain generated during molding is extremely small. Moreover, even when the molding surface is deteriorated due to the reaction with glass during molding, the deterioration becomes uniform. Therefore, the precision of the molded product hardly varies, and the quality control becomes extremely easy.
【0012】[0012]
【実施例】以下、本発明の構成を図1に示す実施例に基
づいて具体的に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of the present invention will be specifically described below based on the embodiment shown in FIG.
【0013】この実施例の成形型1は、図1に示す如
く、型本体2を所定形状に成形し(A図)、この型本体
2の型部2aの表面に炭化珪素の化学蒸着層3を形成し
(B図)、蒸着層3を表面研磨した上(C図)、その研
磨面3aに離型膜4を形成する(D図)ことによって、
得られたものである。In the molding die 1 of this embodiment, as shown in FIG. 1, a mold body 2 is molded into a predetermined shape (FIG. A), and a chemical vapor deposition layer 3 of silicon carbide is formed on the surface of a mold portion 2a of the mold body 2. Is formed (FIG. B), the vapor deposition layer 3 is surface-polished (FIG. C), and the release film 4 is formed on the polishing surface 3a (FIG. D).
It was obtained.
【0014】すなわち、型本体2は、図1(A)に示す
如く、無加圧焼結,ホットプレス焼結,ホットアイソス
タティックプレス等の手法により得られたβ型炭化珪素
の焼結体(嵩密度3.0以上)を所定形状に研削加工し
てなる。なお、型部2aの形状は、蒸着層3及び離型膜
4をコーティングすることによって得られる最終的な形
状に応じたものとされている。That is, as shown in FIG. 1 (A), the mold body 2 is a β-type silicon carbide sintered body obtained by a method such as pressureless sintering, hot press sintering, hot isostatic pressing or the like ( Bulk density of 3.0 or more) is ground into a predetermined shape. The shape of the mold portion 2a is adapted to the final shape obtained by coating the vapor deposition layer 3 and the release film 4.
【0015】この型本体2の型部2aの表面には、図1
(B)に示す如く、非酸化雰囲気において純粋のβ型炭
化珪素を化学蒸着することによって、厚さ200μmの
炭化珪素蒸着層3が形成される。この炭化珪素蒸着層3
の結晶面は、蒸着温度及び蒸着速度等の制御(例えば蒸
着温度1300〜1500℃,蒸着速度10〜数10μ
m/h)により、図3及び図4に示す如く、ミラー指数
表示における(220)面に強配向されている。かかる
配向においては、(220)面のX線回折強度が他の如
何なる結晶面((111)面等)に対しても100倍以
上(より好ましくは500倍以上)となるようにしてお
くことが好ましい。この実施例のものでは、他の結晶面
に対する(220)面のX線回折強度比が、図4に示す
如く、そのピーク強度において500以上となってい
る。なお、図3は蒸着層3の表面組織をノマルスキー顕
微鏡により800倍に拡大したものであり、突起して見
える部分は(111)面である。また、第4図は蒸着層
3のX線回折図(CuKα:30KV×30mA、フルスケ
ール:50KCPS、スリット:1°−1°−0.1mm、
スキャン:2°/min、チャート:20mm/min、メイン
ピーク強度:27KCPS)である。The surface of the mold portion 2a of the mold body 2 is shown in FIG.
As shown in (B), pure β-type silicon carbide is chemically vapor deposited in a non-oxidizing atmosphere to form a silicon carbide vapor deposition layer 3 having a thickness of 200 μm. This silicon carbide deposited layer 3
The crystal plane of the is controlled by the vapor deposition temperature and the vapor deposition rate (for example, the vapor deposition temperature 1300 to 1500 ° C., the vapor deposition rate 10 to several tens of μ).
m / h), as shown in FIGS. 3 and 4, the film is strongly oriented on the (220) plane in the Miller index display. In such an orientation, the X-ray diffraction intensity of the (220) plane should be 100 times or more (more preferably 500 times or more) that of any other crystal plane ((111) plane or the like). preferable. In this example, the X-ray diffraction intensity ratio of the (220) plane to other crystal planes is 500 or more in its peak intensity as shown in FIG. In FIG. 3, the surface texture of the vapor-deposited layer 3 is magnified 800 times by a Nomarski microscope, and the portion that looks like a protrusion is the (111) plane. Further, FIG. 4 is an X-ray diffraction diagram of the vapor deposition layer 3 (CuKα: 30 KV × 30 mA, full scale: 50 KCPS, slit: 1 ° -1 ° -0.1 mm,
Scan: 2 ° / min, chart: 20 mm / min, main peak intensity: 27 KCPS).
【0016】そして、炭化珪素蒸着層3の表面は、図1
(C)に示す如く、RMS粗さが10Å以下となる超平
滑面3aに表面研磨される。すなわち、この実施例で
は、蒸着層3の表面をダイヤモンド砥粒による粗形状出
しを行った上、更にダイヤモンド砥粒による精密研磨を
施すことによって、蒸着層3の表面を表面粗度がRMS
5Å以下で且つ形状精度がλ/4以下の超平滑面3aと
なしてある。かかる表面研磨においては、図2に示す如
く、炭化珪素蒸着層3の結晶面が(220)面に強配向
されていることから、無配向又は弱配向とした場合のよ
うに結晶方位による研磨性の違いが生じず、高度の平滑
面3aを得ることができる。しかも、(111)面に比
して原子密度,表面の化学的不活性度の低い(220)
面に強配向させているため、より少ない研磨エネルギに
より、研磨傷やピットが発生しない超平滑面3aを極め
て容易に得ることができる。かかる研磨性は、配向性が
高くなるに従って、更に良好となる。The surface of the silicon carbide deposited layer 3 is shown in FIG.
As shown in (C), the ultra-smooth surface 3a having an RMS roughness of 10 Å or less is surface-polished. That is, in this embodiment, the surface of the vapor deposition layer 3 is roughened by diamond abrasive grains, and then further precision-polished by the diamond abrasive grains so that the surface of the vapor deposition layer 3 has a surface roughness of RMS.
The ultra-smooth surface 3a is 5 Å or less and the shape accuracy is λ / 4 or less. In such surface polishing, as shown in FIG. 2, since the crystal plane of the silicon carbide vapor-deposited layer 3 is strongly oriented to the (220) plane, the polishing ability due to the crystal orientation as in the case of non-orientation is weak. Therefore, a high-level smooth surface 3a can be obtained. Moreover, the atomic density and the chemical inertness of the surface are lower than those of the (111) plane (220)
Since the surface is strongly oriented, the ultra-smooth surface 3a in which polishing scratches and pits are not generated can be extremely easily obtained with less polishing energy. Such polishing property becomes even better as the orientation becomes higher.
【0017】このようにして超平滑面に仕上げられた成
形面3aには、図1(D)に示す如く、窒化硼素をマグ
ネトロンスパッタによりコーティングすることによっ
て、厚さ0.5μm以下の離型膜4が形成される。As shown in FIG. 1D, the molding surface 3a thus finished to have an ultra-smooth surface is coated with boron nitride by magnetron sputtering to form a release film having a thickness of 0.5 μm or less. 4 is formed.
【0018】かくして得られた成形型1によれば、成形
面3aが超平滑面(表面粗度:RMS5Å以下,形状精
度:λ/4以下)に構成されていることから、表面が極
めて滑らかな高精度の光学素子を良好にワンモールド成
形することができる。しかも、成形面3aを構成する蒸
着層3の結晶面が、図2に示す如く、(220)面に強
配向されているから、成形面3aにおける熱伝導率が一
様となり、成形時に発生する熱歪が極めて小さくなる。
すなわち、蒸着層3における結晶配向性を高めることに
よって、成形面3aにおける熱的特性の均一性の大幅な
向上を図ることができ、熱歪の発生を極力抑制して、成
形型1の耐久性を大幅に向上させることができる。しか
も、成形時におけるガラスとの反応により成形面3aが
劣化するような場合にも、その劣化が一様となる。した
がって、成形品の精度にバラツキが殆ど生じず、品質管
理が極めて容易となる。According to the molding die 1 thus obtained, since the molding surface 3a is constituted by an ultra-smooth surface (surface roughness: RMS 5 Å or less, shape accuracy: λ / 4 or less), the surface is extremely smooth. A highly accurate optical element can be favorably one-molded. Moreover, since the crystal plane of the vapor deposition layer 3 forming the molding surface 3a is strongly oriented to the (220) plane as shown in FIG. 2, the thermal conductivity on the molding surface 3a becomes uniform and occurs during molding. Thermal strain is extremely small.
That is, by increasing the crystal orientation of the vapor deposition layer 3, it is possible to significantly improve the uniformity of thermal characteristics on the molding surface 3a, suppress the occurrence of thermal strain as much as possible, and improve the durability of the molding die 1. Can be significantly improved. Moreover, even when the molding surface 3a is deteriorated due to the reaction with the glass during molding, the deterioration becomes uniform. Therefore, the precision of the molded product hardly varies, and the quality control becomes extremely easy.
【0019】なお、本発明は上記実施例に限定されるも
のではなく、本発明の基本原理を逸脱しない範囲におい
て適宜に改良・変更することができる。例えば、型本体
2の構成材料としては、上記したβ型炭化珪素の他、α
型炭化珪素,タングステン,タングステンカーバイド,
シリンコンナイトライド等の耐熱性硬質材を適宜選択す
ることができる。また、離型膜4は必要に応じて設けら
れるものであり、光学素子の成形条件等によっては必要
としない場合もある。The present invention is not limited to the above-described embodiments, but can be appropriately improved and changed without departing from the basic principle of the present invention. For example, as the constituent material of the mold body 2, in addition to the β-type silicon carbide described above, α
Type silicon carbide, tungsten, tungsten carbide,
A heat resistant hard material such as syrincon nitride can be appropriately selected. Further, the release film 4 is provided as needed, and may not be necessary depending on the molding conditions of the optical element.
【0020】[0020]
【発明の効果】以上の説明から容易に理解されるよう
に、本発明によれば、炭化珪素の化学蒸着層における結
晶面を(220)面に強配向させたことによって、極め
て滑らかな成形面を容易に得ることができ、更に、成形
面における熱的特性の均一性の確保により熱歪の発生を
極力抑制して、成形型の耐久性を大幅に向上させること
ができる。したがって、本発明の成形型によれば、非球
面レンズ等の各種形状のガラス製光学素子を高品質に且
つ精度的バラツキを生じることなく安価に大量生産する
ことがすることができる。As can be easily understood from the above description, according to the present invention, the crystal plane in the chemical vapor deposition layer of silicon carbide is strongly oriented to the (220) plane, resulting in a very smooth molding surface. Further, it is possible to easily obtain the above, and further to suppress the occurrence of thermal strain as much as possible by ensuring the uniformity of the thermal characteristics on the molding surface, and to greatly improve the durability of the molding die. Therefore, according to the molding die of the present invention, glass optical elements of various shapes such as an aspherical lens can be mass-produced with high quality at low cost without causing precision variations.
【図1】第1図は本発明に係る成形型の一実施例を示し
た製作工程図である。FIG. 1 is a manufacturing process diagram showing an embodiment of a molding die according to the present invention.
【図2】炭化珪素蒸着層の研磨形態を示す概念図であ
る。FIG. 2 is a conceptual diagram showing a polishing mode of a silicon carbide vapor deposition layer.
【図3】炭化珪素蒸着層の結晶構造を800倍に拡大し
て示すノマルスキー顕微鏡写真である。FIG. 3 is a Nomarski micrograph showing a crystal structure of a silicon carbide vapor deposition layer at a magnification of 800 times.
【図4】炭化珪素蒸着層のX線回折図である。FIG. 4 is an X-ray diffraction diagram of a silicon carbide vapor deposition layer.
1…成形型、2…型本体、2a…型部、3…炭化珪素の
化学蒸着層、3a…研磨面(成形面)、4…離型膜。1 ... Mold, 2 ... Mold body, 2a ... Mold part, 3 ... Chemical vapor deposition layer of silicon carbide, 3a ... Polishing surface (molding surface), 4 ... Release film.
Claims (2)
着層を形成してなるガラス製光学素子用の成形型におい
て、炭化珪素蒸着層における結晶面を、ミラー指数表示
における(220)面に強配向せしめてあることを特徴
とするガラス製光学素子用の成形型。1. A molding die for a glass optical element, comprising a chemical vapor deposition layer of silicon carbide formed on the surface of a die portion of a die body, wherein a crystal plane in the vapor deposition layer of silicon carbide is represented by a mirror index (220). A mold for glass optical elements, characterized in that the surface is strongly oriented.
面のX線回折強度が、他の如何なる結晶面に対しても1
00倍以上となっていることを特徴とする、請求項1に
記載するガラス製光学素子用の成形型。2. (220) in the above-mentioned silicon carbide vapor deposition layer
The X-ray diffraction intensity of the plane is 1 for any other crystal plane.
The molding die for a glass optical element according to claim 1, wherein the molding die is at least 00 times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33031693A JPH0791075B2 (en) | 1993-12-27 | 1993-12-27 | Molds for glass optical elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33031693A JPH0791075B2 (en) | 1993-12-27 | 1993-12-27 | Molds for glass optical elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07187689A JPH07187689A (en) | 1995-07-25 |
| JPH0791075B2 true JPH0791075B2 (en) | 1995-10-04 |
Family
ID=18231274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33031693A Expired - Fee Related JPH0791075B2 (en) | 1993-12-27 | 1993-12-27 | Molds for glass optical elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0791075B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4786782B2 (en) * | 1999-08-02 | 2011-10-05 | 東京エレクトロン株式会社 | CVD-SiC excellent in corrosion resistance, corrosion resistant member using the same, and processing apparatus |
-
1993
- 1993-12-27 JP JP33031693A patent/JPH0791075B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07187689A (en) | 1995-07-25 |
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