JPH0791651B2 - Diamond coated tungsten carbide based cemented carbide cutting tool chip - Google Patents
Diamond coated tungsten carbide based cemented carbide cutting tool chipInfo
- Publication number
- JPH0791651B2 JPH0791651B2 JP15678186A JP15678186A JPH0791651B2 JP H0791651 B2 JPH0791651 B2 JP H0791651B2 JP 15678186 A JP15678186 A JP 15678186A JP 15678186 A JP15678186 A JP 15678186A JP H0791651 B2 JPH0791651 B2 JP H0791651B2
- Authority
- JP
- Japan
- Prior art keywords
- cemented carbide
- cutting tool
- based cemented
- tungsten carbide
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、ダイヤモンド被覆層の付着強度が著しく高
く、したがってきわめて長期に亘ってすぐれた切削性能
を発揮するダイヤモンド被覆炭化タングステン基超硬合
金製切削工具チップに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is made of a diamond-coated tungsten carbide-based cemented carbide which has a diamond coating layer with extremely high adhesion strength and therefore exhibits excellent cutting performance for an extremely long period of time. It relates to cutting tool tips.
〔従来の技術〕 近年、各種基体の表面にダイヤモンド被覆層を形成する
研究が多く行なわれ、その方法として、CH4などのガス
の熱分解によるCVD法(化学蒸着法)や、カーボンイオ
ンを基体に衝突させるPVD法(物理蒸着法)などの低圧
気相合成法が提案されている。[Prior Art] In recent years, much research has been done on forming a diamond coating layer on the surface of various types of substrates, and as a method therefor, a CVD method (chemical vapor deposition method) by thermal decomposition of a gas such as CH 4 or a carbon ion substrate is used. Low-pressure vapor phase synthesis methods such as PVD method (physical vapor deposition method) for colliding with hydrogen have been proposed.
しかし、上記の低圧気相合成法によって形成されたダイ
ヤモンド被覆層は、基体との付着強度が低いために、こ
れを高負荷のかかる切削工具チップとして実用化するこ
とは不可能であるのが現状である。However, since the diamond coating layer formed by the above low-pressure vapor phase synthesis method has low adhesion strength to the substrate, it is currently impossible to put it into practical use as a cutting tool tip under high load. Is.
そこで、本発明者等は、上述のような観点から、基体に
対する付着強度の高いダイヤモンド被覆層を形成し、も
って切削工具としての利用を可能とすべく、特に基体と
して炭化タングステン(以下WCで示す)基超硬合金に着
目し、研究を行なった結果、 (a)WC基超硬合金基体の表面での低圧気相合成法にお
けるダイヤモンド核の発生は、WC上で起り、Co上ではダ
イヤモンドの一部がグラフアイト化してしまうこと。Therefore, from the viewpoints described above, the present inventors have formed a diamond coating layer having high adhesion strength on a substrate, and in order to enable its use as a cutting tool, tungsten carbide (hereinafter referred to as WC) is particularly used as a substrate. ) As a result of conducting research focusing on the base cemented carbide, (a) diamond nuclei are generated on the surface of the WC base cemented carbide substrate in the low pressure vapor phase synthesis method on WC, and on the Co, diamond nuclei are formed. Part of it turns into graphite.
(b)したがって、WC基超硬合金基体における結合相と
してのCoはできるだけ少ない方がよいが、あまり少なく
すると合金強度を低下をきたすようになることと考え合
わせ、Co含有量を1〜4重量%とした場合に、ダイヤモ
ンド被覆層の付着強度が高く、かつ切削工具としての強
度も確保できること。(B) Therefore, it is preferable that the Co content as the binder phase in the WC-based cemented carbide substrate is as small as possible. However, considering that too small a quantity will lead to a decrease in alloy strength, the Co content is from 1 to 4% by weight. When it is set to%, the adhesion strength of the diamond coating layer is high and the strength as a cutting tool can be secured.
(c)WC基超硬合金におけるWCの粒径を粗粒として、2
〜10μmの平均粒径をもつものとすると、ダイヤモンド
被覆層の形成も速くなり、かつその付着強度も高くなる
こと。(C) The grain size of WC in the WC-based cemented carbide is defined as coarse grains, and 2
If the average particle size is up to 10 μm, the diamond coating layer will be formed faster and its adhesion strength will be higher.
(d)さらに、WC基超硬合金基体の表面をエッチングし
て、結合相形成成分としてのCoを除いたエッチング層、
望ましくは0.1〜1μmの平均層厚を有するエッチング
層を介してダイヤモンド被覆層を形成すると、このダイ
ヤモンド被覆層の前記基体への付着強度が一段と向上す
るようになること。(D) Furthermore, the surface of the WC-based cemented carbide substrate is etched to remove Co as a binder phase forming component,
When the diamond coating layer is formed through an etching layer having an average layer thickness of preferably 0.1 to 1 μm, the adhesion strength of the diamond coating layer to the substrate is further improved.
以上(a)〜(d)に示される知見を得たのである。The findings shown in the above (a) to (d) have been obtained.
この発明は、上記知見にもとづいてなされたものであっ
て、Co:1〜4重量%を含有し、残りがWCと不可避不純物
からなる組成、並びにWCの平均粒径が2〜10μmの粗粒
組織を有するWC基超硬合金基体の表面に、エッチング層
を介して低圧気相合成ダイヤモンド被覆層を形成してな
るダイヤモンド被覆WC基超硬合金製切削工具チップに特
徴を有するものである。The present invention has been made based on the above findings, and has a composition containing Co: 1 to 4% by weight, the balance being WC and unavoidable impurities, and coarse particles having an average particle size of 2 to 10 μm. The present invention is characterized by a diamond-coated WC-based cemented carbide cutting tool tip in which a low-pressure vapor-phase synthetic diamond coating layer is formed on the surface of a WC-based cemented carbide substrate having a structure via an etching layer.
なお、この発明のダイヤモンド被覆WC基超硬合金製切削
工具チップ(以下、被覆切削チップと略記する)におい
て、Co含有量を1〜4重量%と限定したのは、上記のよ
うにその含有量が1重量%未満では切削工具チップに要
求される基体強度を確保することができず、一方その含
有量が4重量%を越えると、ダイヤモンド被覆層の形成
速度が遅くなるばかりでなく、ダイヤモンドの一部がグ
ラフアイト化して、所望のすぐれた耐摩耗性および付着
強度を確保することができなくなるという理由によるも
のであり、またWCの平均粒径を2〜10μmの粗粒とした
のは、その平均粒径が2μm未満では、上記のようにダ
イヤモンド被覆層の形成速度が著しく遅くなるばかりで
なく、その付着強度も低いものとなり、一方10μmを越
えた平均粒径を有するWC基超硬合金の製造は困難である
ことから、その平均粒径を2〜10μmと定めたのであ
る。In the diamond-coated WC-based cemented carbide cutting tool tip of the present invention (hereinafter abbreviated as coated cutting tip), the Co content is limited to 1 to 4% by weight as described above. If the content is less than 1% by weight, the substrate strength required for the cutting tool tip cannot be secured. On the other hand, if the content exceeds 4% by weight, not only the formation rate of the diamond coating layer becomes slow, but also the diamond This is because some of them are graphitized, and it becomes impossible to secure the desired excellent wear resistance and adhesive strength, and the reason why the average particle size of WC is coarse particles of 2 to 10 μm is If the average particle size is less than 2 μm, not only the formation rate of the diamond coating layer becomes extremely slow as described above, but also the adhesion strength becomes low, while the WC having an average particle size exceeding 10 μm. Since the production of the cemented carbide is difficult, it is to the average particle diameter was defined as 2 to 10 [mu] m.
つぎに、この発明の被覆切削チップを実施例により具体
的に説明する。Next, the coated cutting tip of the present invention will be specifically described by way of examples.
まず、原料粉末として、2〜10μmの範囲内の所定の平
均粒径を有する各種のWC粉末および同1.2μmのCo粉末
を用い、これら原料粉末を所定の配合組成に配合し、以
後、通常の条件で混合し、プレス成形し、焼結し(焼結
温度:1430〜1500℃の範囲内の所定温度)、ついで研磨
して、CIS(超硬工具協会)規格SPP432の形状を有し、
かつそれぞれ第1表に示される成分組成、WCの平均粒
径、およびロックウェル硬さ(Aスケール)をもったWC
基超硬合金基体としてのスローアウェイチップを形成し
た。First, as the raw material powder, various WC powders having a predetermined average particle size within the range of 2 to 10 μm and Co powder of the same 1.2 μm were used, and these raw material powders were mixed in a predetermined compounding composition, and thereafter Mix under the conditions, press-mold, sinter (predetermined temperature within the range of 1430 ~ 1500 ° C), then polish, and have the shape of CIS (Cemented Carbide Tool Association) standard SPP432,
WC having the composition, the average particle size of WC, and the Rockwell hardness (A scale) shown in Table 1, respectively.
A throw-away tip was formed as a base cemented carbide substrate.
引続いて上記スローアウェイチップとしての基体を、第
1表に示される腐食液中に浸漬し、この腐食液中に室温
で第1表に示される時間保持の条件でエッチング処理し
て、前記基体の表面に同じく第1表に示される平均層厚
で結合相形成成分としてのCoが除去されたエッチング層
を形成した。Subsequently, the substrate as the throw-away chip is immersed in the corrosive liquid shown in Table 1 and subjected to an etching treatment in the corrosive liquid at room temperature under the conditions of holding time shown in Table 1 to obtain the substrate. An etching layer from which Co as a binder phase forming component was removed was formed on the surface of the same with the average layer thickness shown in Table 1.
ついで、例えば特開昭58−91100号公報に記載され、か
つ第1図に概略説明図で示される通り、低圧気相合成法
の1種である熱電子放射材として熱フィラメントを用い
た化学蒸着装置を用い、これの反応容器(直径:120mmの
石英管)1内に設けられた金属タングステン製熱フィラ
メント3の下方に位置した支持台4上に、上記のエッチ
ング処理後の基体5を載置し、前記熱フィラメント3の
上方位置に開口する反応混合ガス導入管2を通してCH4
とH2からなり、かつCH4/H2に:容量比で0.005の反応混
合ガスを導入し、基体温度:700℃、熱フィラメント温
度:2000℃、反応容器内雰囲気圧力:10torr、反応時間:3
〜6時間の範囲内の所定時間とした条件でダイヤモンド
被覆を行ない、上記基体の表面に第1表に示される平均
層厚のダイヤモンド被覆層を形成することによって、本
発明被覆切削チップ1〜7および比較被覆切削チップ1
〜3をそれ ぞれ製造した。Then, as described in, for example, Japanese Patent Application Laid-Open No. 58-91100, and as schematically shown in FIG. 1, chemical vapor deposition using a hot filament as a thermoelectron emitting material which is one of the low pressure vapor phase synthesis methods. Using the apparatus, the substrate 5 after the above-mentioned etching treatment is placed on the support base 4 located below the metallic tungsten hot filament 3 provided in the reaction vessel (diameter: 120 mm quartz tube) 1 of the apparatus. CH 4 through the reaction mixture gas introduction pipe 2 opened above the hot filament 3.
H 2 and CH 4 / H 2 with a volume ratio of 0.005 introduced into the reaction mixture gas, substrate temperature: 700 ° C., hot filament temperature: 2000 ° C., reaction vessel atmosphere pressure: 10 torr, reaction time: 3
The coated chips 1 to 7 of the present invention are coated with diamond under the condition of a predetermined time within the range of 6 hours to form a diamond coating layer having an average layer thickness shown in Table 1 on the surface of the substrate. And comparative coated cutting tip 1
~ 3 it Each was manufactured.
なお、比較被覆切削チップ1〜3は、いずれも基体の成
分組成およびWCの平均粒径のうちのいずれかの条件がこ
の発明の範囲から外れたものである。In each of the comparative coated cutting chips 1 to 3, any one of the component composition of the substrate and the average particle size of WC is out of the range of the present invention.
つぎに、この結果得られた本発明被覆切削チップ1〜7
および比較被覆切削チップ1〜3について、 被削材:Al−18重量%Si合金、 カッタ径:直径160mmのダブルポジタイプ、 切削速度:520m/min、 送り:0.18mm/刃、 切込み:1.5mm、 切削時間:80分、 の条件でフライス切削試験を行ない、試験後の切刃にお
けるダイヤモンド被覆層の剥離状態、被削材の溶着状
態、切刃自体の状態を観察し、さらに摩耗量を測定し
た。これらの結果を第1表に示した。Next, the coated cutting chips 1 to 7 of the present invention obtained as a result of the above
And for the comparative coated cutting tips 1-3, Work material: Al-18 wt% Si alloy, Cutter diameter: Double positive type with diameter 160 mm, Cutting speed: 520 m / min, Feed: 0.18 mm / Flute, Depth of cut: 1.5 mm Cutting time: 80 minutes, a milling cutting test is performed, and after the test, observe the peeling state of the diamond coating layer on the cutting edge, the welding state of the work material, the state of the cutting edge itself, and further measure the amount of wear. did. The results are shown in Table 1.
第1表に示される結果から、本発明被覆切削チップ1〜
7は、いずれもダイヤモンド被覆層の形成が速く、かつ
基体に対する付着強度も著しく高いので、被覆層の剥離
や、切刃に対する被削材の溶着がほとんどなく、かつ切
刃も正常摩耗を示し、さらにすぐれた耐摩耗性を示すの
に対して、比較被覆切削チップ1〜3に見られるよう
に、基体の成分組成およびWCの平均粒径のうちのいずれ
かでもこの発明の範囲から外れると、ダイヤモンド被覆
層の形成速度が遅く、あるいは付着強度が低下するよう
になることから、切削工具として望ましくない現象が切
刃に現われるようになり、かつ所望の耐摩耗性を示さな
いことが明らかである。From the results shown in Table 1, the coated chips 1 to 1 of the present invention
In No. 7, since the diamond coating layer was formed quickly and the adhesion strength to the substrate was extremely high, there was almost no peeling of the coating layer or welding of the work material to the cutting edge, and the cutting edge also showed normal wear, While exhibiting further excellent wear resistance, as seen in the comparative coated cutting tips 1 to 3, if any of the component composition of the substrate and the average particle size of WC deviates from the scope of the present invention, It is clear that the formation speed of the diamond coating layer becomes slow or the adhesive strength becomes low, so that a phenomenon not desirable as a cutting tool appears on the cutting edge and the desired wear resistance is not exhibited. .
上述のように、この発明のダイヤモンド被覆WC基超硬合
金製切削工具チップにおいては、ダイヤモンド被覆層の
WC基超硬合金基体表面に対する付着強度が著しく高いの
で、きわめて長期に亘ってすぐれた切削性能を発揮する
のである。As described above, in the diamond-coated WC-based cemented carbide cutting tool tip of the present invention, the diamond coating layer
Since the adhesion strength to the surface of the WC-based cemented carbide substrate is extremely high, it exhibits excellent cutting performance for an extremely long period of time.
第1図は熱電子放射材として熱フィラメントを用いる化
学蒸着装置の概略説明図である。 1:反応容器、2:反応混合ガス導入管 3:熱フィラメント、4:支持台 5:基体FIG. 1 is a schematic explanatory view of a chemical vapor deposition apparatus using a hot filament as a thermoelectron emitting material. 1: reaction vessel, 2: reaction mixture gas introduction tube 3: hot filament, 4: support 5: substrate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山下 博明 埼玉県大宮市北袋町1―297 三菱金属株 式会社中央研究所内 (72)発明者 吉村 寛範 東京都品川区西品川1−27−20 三菱金属 株式会社東京製作所内 (56)参考文献 特開 昭58−91100(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiroaki Yamashita 1-297 Kitabukuro-cho, Omiya City, Saitama Prefecture Central Research Laboratory, Mitsubishi Metals Co., Ltd. (72) Inventor Hironori Yoshimura 1-27-20 Nishishinagawa, Shinagawa-ku, Tokyo (56) References Japanese Patent Laid-Open No. 58-91100 (JP, A)
Claims (1)
グステンと不可避不純物からなる組成、並びに炭化タン
グステンの平均粒径が2〜10μmの粗粒組織を有する炭
化タングステン基超硬合金基体の表面に、エッチング層
を介して低圧気相合成ダイヤモンド被覆層を形成してな
るダイヤモンド被覆炭化タングステン基超硬合金製切削
工具チップ。1. A tungsten carbide-based cemented carbide containing Co: 1 to 4% by weight, the balance being tungsten carbide and unavoidable impurities, and having a coarse grain structure with an average grain size of tungsten carbide of 2 to 10 μm. A diamond-coated tungsten carbide-based cemented carbide cutting tool tip having a low-pressure vapor-phase synthetic diamond coating layer formed on the surface of a substrate via an etching layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/066,698 US4731296A (en) | 1986-07-03 | 1987-06-24 | Diamond-coated tungsten carbide-base sintered hard alloy material for insert of a cutting tool |
| DE8787109298T DE3765588D1 (en) | 1986-07-03 | 1987-06-28 | DIAMOND-COVERED Sintered hard metal material based on tungsten carbide, suitable as a cutting tool insert. |
| EP87109298A EP0251264B1 (en) | 1986-07-03 | 1987-06-28 | Diamond-coated tungsten carbide base sintered hard alloy material for insert of a cutting tool |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9566486 | 1986-04-24 | ||
| JP61-95664 | 1986-04-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6353269A JPS6353269A (en) | 1988-03-07 |
| JPH0791651B2 true JPH0791651B2 (en) | 1995-10-04 |
Family
ID=14143760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15678186A Expired - Lifetime JPH0791651B2 (en) | 1986-04-24 | 1986-07-03 | Diamond coated tungsten carbide based cemented carbide cutting tool chip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0791651B2 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH075406B2 (en) * | 1989-04-28 | 1995-01-25 | 東芝タンガロイ株式会社 | Diamond-coated sintered body with excellent adhesion and method for producing the same |
| JP2620971B2 (en) * | 1989-04-21 | 1997-06-18 | 東芝タンガロイ 株式会社 | Diamond coated sintered body with excellent adhesion and method for producing the same |
| JPH03237066A (en) * | 1990-02-13 | 1991-10-22 | Ngk Insulators Ltd | Silicon nitride sintered body and production thereof |
| JP2990218B2 (en) * | 1991-03-26 | 1999-12-13 | 株式会社半導体エネルギー研究所 | Diamond coating member production method |
| US5236740A (en) * | 1991-04-26 | 1993-08-17 | National Center For Manufacturing Sciences | Methods for coating adherent diamond films on cemented tungsten carbide substrates |
| SE9101469D0 (en) * | 1991-05-15 | 1991-05-15 | Sandvik Ab | ETSMETOD |
| SE9202142D0 (en) * | 1992-07-10 | 1992-07-10 | Sandvik Ab | METHOD OF BLASTING CUTTING TOOL INSERTS |
| EP0628642B1 (en) * | 1992-12-08 | 2001-03-21 | Osaka Diamond Industrial Co. | Superhard film-coated material and method of producing the same |
| WO1998002395A1 (en) | 1996-07-11 | 1998-01-22 | Sandvik Ab (Publ) | Sintering method |
| SE509566C2 (en) | 1996-07-11 | 1999-02-08 | Sandvik Ab | sintering Method |
| JPH10138027A (en) * | 1996-11-11 | 1998-05-26 | Shinko Kobelco Tool Kk | Cemented carbide for drill and drill for printed board drilling using same cemented carbide |
| US6071469A (en) * | 1997-06-23 | 2000-06-06 | Sandvik Ab | Sintering method with cooling from sintering temperature to below 1200° C. in a hydrogen and noble gas atmosphere |
| JP4690479B2 (en) * | 2009-08-11 | 2011-06-01 | 住友電気工業株式会社 | Diamond coated tools |
| CN109202144A (en) * | 2018-09-25 | 2019-01-15 | 汇专科技集团股份有限公司 | A kind of multiple-cutting-edge roughing tool |
-
1986
- 1986-07-03 JP JP15678186A patent/JPH0791651B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6353269A (en) | 1988-03-07 |
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