Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0791657B2 - Palladium activator and method for electroless plating of ceramic substrate - Google Patents
[go: Go Back, main page]

JPH0791657B2 - Palladium activator and method for electroless plating of ceramic substrate - Google Patents

Palladium activator and method for electroless plating of ceramic substrate

Info

Publication number
JPH0791657B2
JPH0791657B2 JP63255563A JP25556388A JPH0791657B2 JP H0791657 B2 JPH0791657 B2 JP H0791657B2 JP 63255563 A JP63255563 A JP 63255563A JP 25556388 A JP25556388 A JP 25556388A JP H0791657 B2 JPH0791657 B2 JP H0791657B2
Authority
JP
Japan
Prior art keywords
palladium
ceramic substrate
electroless plating
metal
alkali
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63255563A
Other languages
Japanese (ja)
Other versions
JPH02104671A (en
Inventor
章 葛原
友二 下村
太一 仲村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
C Uyemura and Co Ltd
Original Assignee
C Uyemura and Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by C Uyemura and Co Ltd filed Critical C Uyemura and Co Ltd
Priority to JP63255563A priority Critical patent/JPH0791657B2/en
Publication of JPH02104671A publication Critical patent/JPH02104671A/en
Publication of JPH0791657B2 publication Critical patent/JPH0791657B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28Sensitising or activating
    • C23C18/30Activating or accelerating or sensitising with palladium or other noble metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing of the conductive pattern
    • H05K3/244Finish plating of conductors, especially of copper conductors, e.g. for pads or lands

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、タングステン(W)又はモリブデン(Mo)上
に金属パラジウム核を形成するためのパラジウム活性化
剤及びこれらWやMoの導体パターンが形成されたセラミ
ック基板の該パターン上に選択的に無電解めっきを施す
方法に関する。
The present invention relates to a palladium activator for forming a metal palladium nucleus on tungsten (W) or molybdenum (Mo) and a conductor pattern of these W and Mo. The present invention relates to a method of selectively performing electroless plating on the pattern of a formed ceramic substrate.

〔従来の技術〕[Conventional technology]

WやMoの導体パターン(WやMoの焼結回路)が形成され
たセラミック基板上の該導体パターンに無電解めっきを
施すには、まず該導体パターンを活性化する必要があ
り、かかる活性化手段としては、従来、金属パラジウム
核を導体パターン上に析出させるパラジウム活性化方法
が採用されており、無電解めっき皮膜はこの金属パラジ
ウム核上に析出する。
In order to perform electroless plating on the conductor pattern on the ceramic substrate on which the conductor pattern of W or Mo (sintered circuit of W or Mo) is formed, it is necessary to first activate the conductor pattern. As a means, a palladium activation method has heretofore been adopted in which a metal palladium nucleus is deposited on a conductor pattern, and an electroless plating film is deposited on this metal palladium nucleus.

しかし、このようなパラジウムによる活性化を行なう場
合は通常セラミック基板を第1錫イオンを含むセンシタ
イジング液に浸漬した後、パラジウムイオンを含む活性
化液に浸漬したり、或いは第1錫イオンとパラジウムイ
オンとを含む活性化液に浸漬するものであるが、第1錫
イオン、パラジウムイオンは吸着性が強いので、セラミ
ック基板の全面に金属パラジウム核が析出し易い。
However, when such activation with palladium is performed, usually, after immersing the ceramic substrate in a sensitizing solution containing stannous ions and then immersing it in an activating solution containing palladium ions, or by activating it with stannous ions. Although it is immersed in an activating solution containing palladium ions, stannous ions and palladium ions have strong adsorptivity, so that metal palladium nuclei are easily deposited on the entire surface of the ceramic substrate.

このため、セラミック基板の導体パターン以外の部分を
吸着性の少ないレジスト膜でマスキングしたり、セラミ
ック基板全面に無電解めっき皮膜を析出させた後、導体
パターン以外の部分の無電解めっき皮膜を適宜なエッチ
ング剤で溶解除去する方法などが採用されているが、こ
れらの方法は工程が多くかつ複雑であり、作業能力が悪
くなり、コストも高くなる。
For this reason, after masking the portions other than the conductor pattern of the ceramic substrate with a resist film having low adsorptivity, or after depositing the electroless plating film on the entire surface of the ceramic substrate, the electroless plating film on the portion other than the conductor pattern is appropriately formed. Although a method of dissolving and removing with an etching agent is adopted, these methods have many steps and are complicated, workability is deteriorated, and cost is increased.

また、この点を改良するものとして、従来、水溶性パラ
ジウム塩、アルカリ金属水酸化物を含むパラジウム活性
化液にエチレンジアミン、プロピレンジアミン、ブチレ
ンジアミンのうちから選ばれた1種類以上の錯化剤を添
加してなるパラジウム活性化液が提案されている(特開
昭58−185794号公報)。この活性化液は、上記アミンの
添加によりパラジウムの吸着性に差をもたせたものであ
るが、この液は安定性に問題があり、また最適使用範囲
が比較的狭く、工程管理上に問題がある。
In order to improve this point, a palladium activating solution containing a water-soluble palladium salt and an alkali metal hydroxide is conventionally provided with at least one complexing agent selected from ethylenediamine, propylenediamine and butylenediamine. A palladium activating liquid added has been proposed (Japanese Patent Laid-Open No. 58-185794). This activation liquid has a difference in the adsorption of palladium due to the addition of the above amine, but this liquid has a problem in stability, and the optimum range of use is relatively narrow, which causes problems in process control. is there.

本発明は上記事象に鑑みなされたもので、WやMo上に選
択的に金属パラジウム核を析出させることができ、この
ためこれらWやMoの導体パターンが形成されたセラミッ
ク基板に対し、この導体パターンのみに選択的に無電解
めっき皮膜を析出させることができ、しかも工程管理も
容易である上、パラジウム濃度を下げてもその機能を有
効に発揮するパラジウム活性化剤及びこのパラジウム活
性化剤を用いたセラミック基板の無電解めっき方法を提
供することを目的とする。
The present invention has been made in view of the above-mentioned phenomenon, and metal palladium nuclei can be selectively deposited on W or Mo. Therefore, a conductor pattern of W or Mo is formed on a ceramic substrate. It is possible to selectively deposit an electroless plating film only on a pattern, the process control is easy, and a palladium activator and this palladium activator that effectively exhibit their function even if the palladium concentration is lowered. An object of the present invention is to provide a method for electroless plating of a used ceramic substrate.

〔課題を解決するための手段及び作用〕[Means and Actions for Solving the Problems]

本発明者らは、上記目的を達成するため種々検討を行な
った結果、アルカリ可溶性パラジウム塩とアルカリ金属
水酸化物とを含むパラジウム活性化剤に対し、鉛、タリ
ウム、ビスマス、アンチモンのアルカリ可溶性化合物の
1種又は2種以上を添加した場合、この活性化剤でWや
Moの導体パターンが形成されたセラミック基板を処理す
ると、この導体パターンにのみ金属パラジウム核が生成
し、導体パターンが形成されていないセラミック素地に
は金属パラジウム核が生成せず、またこの場合活性化剤
のパラジウム濃度が低くてもその効果を発揮し、広い範
囲においてかかる活性化が達成されるので、工程管理が
容易になることを知見し、本発明をなすに至ったもので
ある。
As a result of various studies to achieve the above object, the present inventors have found that for palladium activators containing an alkali-soluble palladium salt and an alkali metal hydroxide, lead, thallium, bismuth, and an alkali-soluble compound of antimony are used. If 1 or 2 or more of
When a ceramic substrate on which a Mo conductor pattern is formed is processed, metal palladium nuclei are generated only on this conductor pattern, and no metal palladium nuclei are formed on the ceramic base on which the conductor pattern is not formed. The inventors of the present invention have found that the effect is exhibited even when the palladium concentration of the agent is low, and such activation is achieved in a wide range, so that process control is facilitated, and the present invention has been accomplished.

なお、このようにPb,Tl,Bi,Sbのアルカリ可溶性化合物
の添加がWやMoの導体パターン上に対してのみ選択的に
金属パラジウム核を生成する作用機構は下記のように推
定される。即ち、上記活性化剤の溶液でWやMoの導体パ
ターンが形成されたセラミック基板を処理すると、Wや
Moの酸化物はアルカリに溶解し、この際新鮮なW,Moが顕
われ、このW,Mo上にパラジウムイオンが吸着する。この
ときに同時にPb,Tl,Bi又はSbのイオンも吸収し、これら
Pb,Tl,Bi,SbのイオンはWやMoとの電気化学的作用でパ
ラジウムイオンが金属コロイド状のパラジウムに還元さ
れるための触媒として作用し、W,Mo上に金属コロイド状
のパラジウム(金属パラジウム核)が形成する。一方、
W,Moの導体パターン以外のセラミック素地上にもパラジ
ウムイオンとPb,Tl,Bi又はSbのイオンは同時に吸着する
が、この場合Pb,Tl,Bi,Sbのイオンはセラミック素地上
においては電気化学的作用が生じないので、パラジウム
イオンは金属コロイド状になることはなく、パラジウム
イオンのまま残る。ここで、無電解めっき析出の核にな
るのは、金属コロイド状のパラジウムであり、パラジウ
ムイオンや酸化パラジウム(PdO)などは無電解めっき
析出の核にはなり得ない。従って、このように処理され
たセラミック基板を無電解めっき液中に浸漬するとWや
Moの導体パターンのみにめっきが析出し、それ以外のセ
ラミック素地にはめっき析出が生じないものと推察され
る。
The mechanism of action by which the addition of the alkali-soluble compound of Pb, Tl, Bi, Sb selectively produces metal palladium nuclei only on the conductor pattern of W or Mo is presumed as follows. That is, when the ceramic substrate on which the conductor pattern of W or Mo is formed is treated with the solution of the activator,
The oxide of Mo is dissolved in alkali, and fresh W and Mo appear at this time, and palladium ions are adsorbed on the W and Mo. At the same time, it also absorbs Pb, Tl, Bi or Sb ions,
The ions of Pb, Tl, Bi, Sb act as a catalyst for the reduction of palladium ion to metal colloidal palladium by the electrochemical action with W and Mo, and the metal colloidal palladium (on the W and Mo ( Metal palladium nuclei) are formed. on the other hand,
Palladium ions and Pb, Tl, Bi or Sb ions are simultaneously adsorbed on the ceramic substrate other than the conductor patterns of W and Mo. In this case, the Pb, Tl, Bi, and Sb ions are electrochemical on the ceramic substrate. Since the physical action does not occur, the palladium ion does not become a metal colloid and remains as the palladium ion. Here, the core of the electroless plating deposition is palladium in the form of a metal colloid, and palladium ions and palladium oxide (PdO) cannot be the core of the electroless plating deposition. Therefore, when the ceramic substrate treated in this way is immersed in the electroless plating solution, W or
It is presumed that plating is deposited only on the Mo conductor pattern and that plating is not deposited on other ceramic base materials.

従って、本発明は、タングステン又はモリブデン上に金
属パラジウム核を形成するためのパラジウム活性化剤で
あって、アルカリ可溶性パラジウム塩とアルカリ金属水
酸化物と鉛、タリウム、ビスマス及びアンチモンから選
ばれた1種又は2種以上の金属のアルカリ可溶性化合物
とを含有することを特徴とするパラジウム活性化剤及び
タングステン又はモリブデンの導体パターンが形成され
たセラミック基板を上記パラジウム活性化剤の溶液に浸
漬して、上記パターン上に選択的に金属パラジウム核を
形成し、次いで無電解めっきを行なって、該パターン上
に選択的に無電解めっき皮膜を析出させることを特徴と
するセラミック基板の無電解めっき方法を提供する。
Accordingly, the present invention is a palladium activator for forming a metallic palladium nucleus on tungsten or molybdenum, which is selected from alkali soluble palladium salts, alkali metal hydroxides, lead, thallium, bismuth and antimony. And a ceramic substrate having a conductor pattern of tungsten or molybdenum containing an alkali-soluble compound of one or more kinds of metals, and immersing it in a solution of the above palladium activator, Provided is an electroless plating method for a ceramic substrate, which comprises selectively forming a metal palladium nucleus on the pattern, and then performing electroless plating to selectively deposit an electroless plating film on the pattern. To do.

以下、本発明につき更に詳しく説明する。Hereinafter, the present invention will be described in more detail.

本発明の活性化剤において使用されるアルカリ可溶性パ
ラジウム塩としては、アルカリに可溶性であればよく、
特に制限されるものではないが、アンモニウム、エチレ
ンジアミン、ジエチレントリアミン、グリシン、EDTA、
酒石酸、クエン酸等のアンモニウム、有機アミン、有機
カルボン酸などのパラジウム錯塩が好適に使用される。
この場合、これらパラジウム錯塩は、活性化剤溶液を調
製する際、塩化パラジウム等の無機パラジウム塩にアン
モニア、有機アミン、有機カルボン酸などを加えること
により、溶液中で形成することができる。
The alkali-soluble palladium salt used in the activator of the present invention may be any alkali-soluble palladium salt,
Although not particularly limited, ammonium, ethylenediamine, diethylenetriamine, glycine, EDTA,
Palladium complex salts such as ammonium such as tartaric acid and citric acid, organic amines and organic carboxylic acids are preferably used.
In this case, these palladium complex salts can be formed in the solution by adding ammonia, an organic amine, an organic carboxylic acid or the like to an inorganic palladium salt such as palladium chloride when preparing the activator solution.

上記アルカリ可溶性パラジウム塩の濃度は、Pdとして10
〜500mg/、特に20〜70mg/とすることが好ましく、
本発明においては低パラジウム濃度においても十分使用
し得る。
The concentration of the alkali-soluble palladium salt is 10 as Pd.
~ 500 mg /, particularly preferably 20-70 mg /,
In the present invention, even a low palladium concentration can be sufficiently used.

また、アルカリ金属水酸化物としては、NaOH,KOH,LiOH
が挙げられ、その濃度は10〜500g/、特に40〜120g/
とすることが好ましい。
Also, as alkali metal hydroxides, NaOH, KOH, LiOH
The concentration is 10 to 500 g /, particularly 40 to 120 g /
It is preferable that

さらに、Pb,Tl,Bi,Sbのアルカリ可溶性化合物として
は、これら金属の酸化物、塩化物、水酸化物、硝酸塩、
酢酸塩等の1種又は2種以上を使用することができる。
その濃度は、これら金属化合物の金属と上記パラジウム
塩のPdとの比率が重量比として0.05:1〜1:1、特に0.1:1
〜0.5:1となるような濃度とすることが好ましい。これ
らの金属化合物濃度が低過ぎるとその添加効果が充分発
揮されず、また高過ぎると無電解めっきの析出を阻害す
る場合があり、めっきむら、無めっきが生じるおそれが
ある。
Furthermore, as an alkali-soluble compound of Pb, Tl, Bi, Sb, oxides, chlorides, hydroxides, nitrates of these metals,
One kind or two or more kinds such as acetate can be used.
Its concentration is such that the weight ratio of the metal of these metal compounds to the Pd of the palladium salt is 0.05: 1 to 1: 1, particularly 0.1: 1.
It is preferable that the concentration is about 0.5: 1. If the concentration of these metal compounds is too low, the effect of addition is not sufficiently exhibited, and if it is too high, the deposition of electroless plating may be hindered, and uneven plating or no plating may occur.

上記活性化剤はW又はMo表面に金属パラジウム核を形成
するために使用されるものであり、典型的にはセラミッ
ク基板に形成されたW又はMo導電パターンの無電解めっ
きの前処理剤として該パターン上に金属パラジウム核を
形成するために用いられる。
The activator is used for forming a metal palladium nucleus on the surface of W or Mo, and is typically used as a pretreatment agent for electroless plating of W or Mo conductive pattern formed on a ceramic substrate. Used to form metallic palladium nuclei on the pattern.

かかるセラミック基板を上記活性化剤を用いて無電解め
っきする方法としては、常法が採用し得、例えばセラミ
ック基板を脱脂、アルカリエッチング、酸洗するなどの
適宜な前処理を施した後、活性化剤溶液に浸漬し、W又
はMo導体パターン上に金属パラジウム核を形成した後、
無電解めっき液中に浸漬して無電解めっきを行なうもの
である。
As a method for electrolessly plating such a ceramic substrate using the above-mentioned activator, a conventional method can be adopted. For example, the ceramic substrate is subjected to appropriate pretreatment such as degreasing, alkali etching, and pickling, and then activated. After immersing in the agent solution and forming a metallic palladium nucleus on the W or Mo conductor pattern,
The electroless plating is performed by immersing in an electroless plating solution.

この場合、活性化処理条件としては、特に制限されるも
のではないが、処理温度は室温〜90℃、特に60〜80℃、
処理時間1〜10分、特に5〜8分の条件が好適に採用さ
れる。
In this case, the activation treatment conditions are not particularly limited, but the treatment temperature is room temperature to 90 ° C, particularly 60 to 80 ° C,
A treatment time of 1 to 10 minutes, especially 5 to 8 minutes, is preferably adopted.

また、無電解めっきの種類は何ら制限されず、所望に応
じて選択されるが、通常無電解銅めっき、無電解ニッケ
ルめっきなどが採用される。なお、これらめっき液の組
成、めっき条件も公知の組成、条件が採用し得る。
The type of electroless plating is not particularly limited and may be selected as desired, but electroless copper plating, electroless nickel plating, etc. are usually employed. Known compositions and conditions can be adopted as the composition and plating conditions of these plating solutions.

而して、上記の無電解めっき工程において、セラミック
基板はその活性化工程においてW又はMo導体パターン上
にのみ金属パラジウム核が生成し、他のセラミック素地
上には金属パラジウム核が生成しないので、該導体パタ
ーンにのみ無電解めっき皮膜が形成される。
Thus, in the above electroless plating step, the ceramic substrate generates metallic palladium nuclei only on the W or Mo conductor pattern in the activation step, and does not generate metallic palladium nuclei on other ceramic substrates. An electroless plating film is formed only on the conductor pattern.

次に、実施例と比較例により本発明を更に具体的に説明
するが、本発明は下記の実施例に制限されるものではな
い。
Next, the present invention will be described more specifically with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples.

〔実施例,比較例〕[Examples and comparative examples]

第1表に示す組成のパラジウム活性化液を調製した。 A palladium activating liquid having the composition shown in Table 1 was prepared.

次に、W及びMoの焼結導電パターンが形成されたセラミ
ック基板につき、下記工程で無電解ニッケルめっきを施
した。その時のめっき状態を第1表に併記する。
Next, the ceramic substrate on which the sintered conductive patterns of W and Mo were formed was subjected to electroless nickel plating in the following steps. The plating state at that time is also shown in Table 1.

めっき工程 1.脱脂 食器用洗剤20ml/ 50℃,10分 2.水洗 イオン交換水 室温,5分 4.水洗 イオン交換水 室温,3分 5.酸洗 塩酸(36%)500ml/ 室温,1分 6.水洗 イオン交換水 室温,3分 7.活性化 第1表に示す活性化液 70℃,5分 8.水洗 イオン交換水 室温,5分 9.無電解ニッケルめっき 上村工業社製BELニッケル使用 65℃,10分 10.水洗 イオン交換水 室温,10分 11.乾燥 第1表の結果より、本発明の活性化剤を用いた無電解ニ
ッケルめっき方法は、パターン外への析出がなく、確実
にパターンにのみ確実にめっき皮膜を形成し得ることが
認められる。
Plating process 1. Degreasing Detergent for dishware 20ml / 50 ℃, 10 minutes 2. Washing with water Ion-exchanged water, room temperature, 5 minutes 4. Washing with water Ion-exchanged water at room temperature, 3 minutes 5. Pickling with hydrochloric acid (36%) 500 ml / room temperature, 1 minute 6. Washing with water Ion-exchanged water at room temperature, 3 minutes 7. Activation 5 minutes 8. Washing with water Ion-exchanged water at room temperature, 5 minutes 9. Electroless nickel plating Using BEL nickel manufactured by Uemura Kogyo Co., Ltd. 65 ° C, 10 minutes 10. From the results shown in Table 1, it is recognized that the electroless nickel plating method using the activator of the present invention can surely form the plating film only on the pattern without deposition outside the pattern.

比較のため、上記めっき工程において、パラジウム活性
化液として比較例1のものを使用する以外はステップ8
までは同様に操作し、それ以後のステップを下記のよう
にして無電解ニッケルめっきを行なった。
For comparison, in the plating process described above, Step 8 is repeated except that the palladium activating liquid used is that of Comparative Example 1.
The same operation was performed until then, and electroless nickel plating was performed in the subsequent steps as described below.

めっき工程 1〜8 上記と同じ 8′ 重金属水溶液処理 室温,5分 使用液No.1 酢酸鉛 78mg/ pH 13.0 使用液No.2 Bi(NO) 110mg/ pH 13.0 使用液No.3 TINO3 50mg/ pH 13.0 8″ 水洗 イオン交換水 室温,3分 9 上記と同じ 10 上記と同じ その結果、使用液No.1〜No.3のいずれのものを使用した
場合も、パターンの一部にめっきが析出しない箇所が見
られ、かつ、パターン外への析出も部分的に見られた。
Plating process 1-8 Same as above 8 ′ Heavy metal aqueous solution treatment Room temperature, 5 minutes Liquid used No.1 Lead acetate 78mg / pH 13.0 Liquid used No.2 Bi (NO 3 ) 3 110mg / pH 13.0 Liquid used No.3 TINO 3 50mg / pH 13.0 8 ″ Washing with water Ion-exchanged water, room temperature, 3 minutes 9 Same as above 10 Same as above As a result, when any of the used liquids No.1 to No.3 is used, plating is applied to part of the pattern Was not deposited, and deposition outside the pattern was also partially seen.

〔発明の効果〕〔The invention's effect〕

以上説明したように、本発明によればWやMo上に選択的
に金属パラジウム核を析出させることができ、WやMoの
導体パターンが形成されたセラミック基板に対しこの導
体パターンのみに選択的に無電解めっき皮膜を析出させ
ることができ、かつパラジウム濃度が低下しても機能を
有効に発揮し、その工程管理も容易である。
As described above, according to the present invention, metal palladium nuclei can be selectively deposited on W or Mo, and a ceramic substrate on which a conductor pattern of W or Mo is formed is selectively formed only on this conductor pattern. It is possible to deposit an electroless plating film on the aluminum alloy, and to effectively exhibit the function even when the palladium concentration decreases, and the process control is easy.

フロントページの続き (72)発明者 仲村 太一 大阪府枚方市出口1丁目5番1号 上村工 業株式会社中央研究所内 (56)参考文献 特開 昭58−84964(JP,A) 特開 昭60−56073(JP,A) 特開 昭58−202595(JP,A) 特開 昭60−224292(JP,A)Front page continuation (72) Inventor Taichi Nakamura 1-5-1, Exit Hirakata, Osaka Prefecture Central Research Laboratory, Uemura Industrial Co., Ltd. (56) References JP-A-58-84964 (JP, A) JP-A-60 -56073 (JP, A) JP-A-58-202595 (JP, A) JP-A-60-224292 (JP, A)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】タングステンまたはモリブデン上に金属パ
ラジウム核を形成するためのパラジウム活性化剤であっ
て、アルカリ可溶性パラジウム塩と、アルカリ金属水酸
化物と、鉛、タリウム、ビスマス及びアンチモンから選
ばれた1種又は2種以上の金属のアルカリ可溶性化合物
とを含有することを特徴とするパラジウム活性化剤。
1. A palladium activator for forming a metallic palladium nucleus on tungsten or molybdenum, which is selected from alkali-soluble palladium salts, alkali metal hydroxides, lead, thallium, bismuth and antimony. A palladium activator comprising an alkali-soluble compound of one or more metals.
【請求項2】タングステン又はモリブデンの導体パター
ンが形成されたセラミック基板を請求項1記載のパラジ
ウム活性化剤の溶液に浸漬して、上記パターン上に選択
的に金属パラジウム核を形成し、次いで無電解めっきを
行なって、該パターン上に選択的に無電解めっき被膜を
析出させることを特徴とするセラミック基板の無電解め
っき方法。
2. A ceramic substrate on which a conductor pattern of tungsten or molybdenum is formed is dipped in the solution of the palladium activator according to claim 1 to selectively form metal palladium nuclei on the pattern, and then to form a metal palladium nucleus. An electroless plating method for a ceramic substrate, comprising performing electrolytic plating to selectively deposit an electroless plating film on the pattern.
JP63255563A 1988-10-11 1988-10-11 Palladium activator and method for electroless plating of ceramic substrate Expired - Fee Related JPH0791657B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63255563A JPH0791657B2 (en) 1988-10-11 1988-10-11 Palladium activator and method for electroless plating of ceramic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63255563A JPH0791657B2 (en) 1988-10-11 1988-10-11 Palladium activator and method for electroless plating of ceramic substrate

Publications (2)

Publication Number Publication Date
JPH02104671A JPH02104671A (en) 1990-04-17
JPH0791657B2 true JPH0791657B2 (en) 1995-10-04

Family

ID=17280462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63255563A Expired - Fee Related JPH0791657B2 (en) 1988-10-11 1988-10-11 Palladium activator and method for electroless plating of ceramic substrate

Country Status (1)

Country Link
JP (1) JPH0791657B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3598317B2 (en) * 1999-01-20 2004-12-08 独立行政法人産業技術総合研究所 Pretreatment method for electroless plating
JP3561240B2 (en) 2001-05-25 2004-09-02 京セラ株式会社 Manufacturing method of wiring board
JP2003073841A (en) * 2001-08-28 2003-03-12 Kyocera Corp Wiring board and method of manufacturing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5884964A (en) * 1981-11-16 1983-05-21 Seiko Epson Corp Production of pattern plating on insulator
DE3412447A1 (en) * 1984-03-31 1985-11-28 Schering AG, 1000 Berlin und 4709 Bergkamen METHOD FOR PRODUCING PRINTED CIRCUITS

Also Published As

Publication number Publication date
JPH02104671A (en) 1990-04-17

Similar Documents

Publication Publication Date Title
US5380560A (en) Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US3993799A (en) Electroless plating process employing non-noble metal hydrous oxide catalyst
US3632435A (en) Preparation of substrate for electroless deposition
US4234628A (en) Two-step preplate system for polymeric surfaces
US6902765B2 (en) Method for electroless metal plating
WO2004067192A1 (en) Electroless plating solution and process
US4199623A (en) Process for sensitizing articles for metallization and resulting articles
JPH05202484A (en) Controlled electroless plating
US4136216A (en) Non-precious metal colloidal dispersions for electroless metal deposition
KR100709446B1 (en) Method of Preparing Metal Pattern having Low Resistivity
US20170152600A1 (en) Plating catalyst and method
US5213841A (en) Metal accelerator
US4328266A (en) Method for rendering non-platable substrates platable
US4321285A (en) Electroless plating
JPH0613753B2 (en) Method for producing solution containing fine metal body used for electroless plating
US4419390A (en) Method for rendering non-platable semiconductor substrates platable
JPH0791657B2 (en) Palladium activator and method for electroless plating of ceramic substrate
JP2003160876A (en) Catalyst for electroless plating and method for forming metal plating pattern
US4261747A (en) Dispersions for activating non-conductors for electroless plating
US4259113A (en) Composition for sensitizing articles for metallization
US4228201A (en) Method for rendering a non-platable semiconductor substrate platable
JP4230813B2 (en) Gold plating solution
EP2784180B1 (en) Method for activating a copper surface for electroless plating
US4132832A (en) Method of applying dispersions for activating non-conductors for electroless plating and article
JP2000336486A (en) Substrate provided with catalyst nucleus, method of catalytically treating substrate and electroless plating method

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees