JPH0792931B2 - Optical recording / reproducing method - Google Patents
Optical recording / reproducing methodInfo
- Publication number
- JPH0792931B2 JPH0792931B2 JP61046539A JP4653986A JPH0792931B2 JP H0792931 B2 JPH0792931 B2 JP H0792931B2 JP 61046539 A JP61046539 A JP 61046539A JP 4653986 A JP4653986 A JP 4653986A JP H0792931 B2 JPH0792931 B2 JP H0792931B2
- Authority
- JP
- Japan
- Prior art keywords
- recording
- transparent
- optical
- thickness
- thin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 13
- 239000010409 thin film Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052711 selenium Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010408 film Substances 0.000 description 18
- 230000000694 effects Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000003278 haem Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、光,熱などを用いて光学情報記録部材に、高
速かつ、高密度に情報を記録・再生する方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for recording / reproducing information on / from an optical information recording member at high speed and high density by using light, heat or the like.
従来の技術 近年、情報量の増大化,記録,再生の高速化,高密度化
に伴ない、レーザ光線を利用した光ディスクが注目され
ている。光ディスクには、一度のみ記録可能な追記型
と、記録した信号を消去し何度も使用可能な書き換え可
能なものがある。追記型光ディスクには、記録信号を穴
あき状態として、再生するものや、凹凸を生成させて再
生するものがある。書き換え可能なものとしてはカルコ
ゲン化物を用いる試みがあり、Te−Geを初めとして、Te
とAs,S,Si,Se,Sb,Biなどを添加した例が知られている。2. Description of the Related Art In recent years, an optical disk using a laser beam has been attracting attention as the amount of information increases, the speed of recording and reproducing increases, and the density increases. There are two types of optical discs, a write-once type that can be recorded only once and a rewritable type that can erase a recorded signal and can be used many times. Some write-once type optical discs are played back with a recording signal in a perforated state, and others are played back by generating irregularities. There are attempts to use chalcogenides as rewritable ones, and Te-Ge and other Te
It is well known that As, S, Si, Se, Sb, Bi, etc. are added.
これらに対して、記録層としてTe,Ge,SeおよびAuからな
る組成物を用いる記録媒体が提案されている。この材料
は耐熱性,耐湿性に優れ、高感度で記録・消去に対する
くり返しの特性が良いという特長がある。On the other hand, a recording medium using a composition composed of Te, Ge, Se and Au as a recording layer has been proposed. This material has excellent heat resistance and moisture resistance, high sensitivity, and good repeatability for recording and erasing.
発明が解決しようとする問題点 Te,Ge,SeおよびAuからなる系の材料は上記のような利点
を有するが次のような問題点を有している。Problems to be Solved by the Invention The materials of the system consisting of Te, Ge, Se and Au have the above-mentioned advantages, but have the following problems.
すなわち記録状態(非晶状態)と消去状態(結晶状態)
の光学特性の差が小さく再生に際しての信号振巾が小さ
いことである。That is, recorded state (amorphous state) and erased state (crystalline state)
That is, the difference in the optical characteristics of is small and the signal amplitude at the time of reproduction is small.
薄膜の光学特性は材料の屈折率nおよび消衰係数kおよ
び膜厚によって定まるがTe,Ge,Se,Au系では屈折率nの
変化が小さく、光学状態を反射率として読み出す場合に
はその変化量が小さい。The optical characteristics of a thin film are determined by the refractive index n, extinction coefficient k, and film thickness of the material, but the change in refractive index n is small in the Te, Ge, Se, Au system, and changes when reading the optical state as reflectance. The amount is small.
問題点を解決するための手段 透明な基材上に第1の透明な薄層を設け、この薄層上
に、Te,Ge,Se,Au系記録薄膜を設け、さらにこの上に第
2の透明な薄層を設けた構造の記録媒体を用い、記録薄
膜の光学的特性を変化させて情報を記録し、これに光源
から出る波長λ(nm)の光を照射しその反射光を光検出
器で検出して信号を再生する。Means for Solving Problems A first transparent thin layer is provided on a transparent substrate, a Te, Ge, Se, Au-based recording thin film is provided on this thin layer, and a second transparent thin film is further provided thereon. Information is recorded by changing the optical characteristics of the recording thin film using a recording medium with a transparent thin layer, and the light of wavelength λ (nm) emitted from the light source is irradiated onto this to detect the reflected light. To detect the signal and reproduce the signal.
ここにおいて記録薄膜の厚さt2は 70t2140nm の範囲であり、第1の透明薄層の厚さt1は屈折率をn1と
して の範囲とする。ただしt10かつiは0又は正の整数で
ある。Here, the thickness t 2 of the recording thin film is in the range of 70t 2 140 nm, and the thickness t 1 of the first transparent thin layer is n 1 as the refractive index. The range is. However, t 10 and i are 0 or a positive integer.
作用 本発明によれば、記録媒体の再生光に対する反射率を相
対的に低下させかつ記録状態と消去状態の反射率差を大
きくすることができ総合的に再生信号のSN比が大きくな
る。Effect According to the present invention, the reflectance of the recording medium with respect to the reproduction light can be relatively reduced and the reflectance difference between the recording state and the erasing state can be increased, and the SN ratio of the reproduction signal can be comprehensively increased.
実 施 例 第1図に示すように、透明な基板1上に、透明薄層を設
け、その上にTe,Ge,Se,Au系の記録薄膜3を設ける。さ
らにその上に第2の透明薄層4を設け、保護基板5で覆
ったものを記録媒体とする。この媒体に対して光源6か
らの光を照射し、媒体からの反射光をヒームスプリッタ
ー7を介して光検出器8により検出する。Practical Example As shown in FIG. 1, a transparent thin layer is provided on a transparent substrate 1, and a Te, Ge, Se, Au-based recording thin film 3 is provided thereon. Further, a second transparent thin layer 4 is provided thereon, and the one covered with a protective substrate 5 is used as a recording medium. Light from the light source 6 is applied to this medium, and the reflected light from the medium is detected by the photodetector 8 via the heme splitter 7.
本発明において用いるTe,Ge,Se,Au系材料について以下
に記す。第2図にこの系において結晶・非晶質の相転移
が可能で光学記録媒体として使用可能な範囲を示した。
図はTe,Ge,Seより構成されているが、Au濃度は第2図に
示されたTe,Ge,Se組成に対し、5〜40at%である。(Au
濃度は(TexGeySez)mAumで示した場合のmに相当,た
だし、x+y+z=100)第2図において各点は以下の
組成である。The Te, Ge, Se, Au-based materials used in the present invention will be described below. FIG. 2 shows the range in which a crystalline / amorphous phase transition is possible in this system and which can be used as an optical recording medium.
The figure is composed of Te, Ge and Se, but the Au concentration is 5 to 40 at% with respect to the composition of Te, Ge and Se shown in FIG. (Au
The concentration corresponds to m in the case of (Te x Ge y Se z ) m Au m , where x + y + z = 100). In FIG. 2, each point has the following composition.
A1点 (Te90Ge5Se5) B1点 (Te60Ge5Se35) C1点 (Te40Ge25Se35) D1点 (Te40Ge40Se20) E1点 (Te55Ge40Se5) A1−B1−C1−D1−E1で囲まれた範囲が使用可能な範囲で
ある。さらに非晶質から結晶への転移温度,結晶化の速
度等から実用的な範囲がA2−B2−C2−D2−E2で囲まれる
範囲でかつAu濃度が10〜35at%の領域である。A 1 point (Te 90 Ge 5 Se 5 ) B 1 point (Te 60 Ge 5 Se 35 ) C 1 point (Te 40 Ge 25 Se 35 ) D 1 point (Te 40 Ge 40 Se 20 ) E 1 point (Te 55 Ge 40 Se 5) range surrounded by a 1 -B 1 -C 1 -D 1 -E 1 is a usable range. Further the transition temperature from amorphous to crystalline, the range a and Au concentration practical range is surrounded by A 2 -B 2 -C 2 -D 2 -E 2 from speed of crystallization of 10~35At% Area.
ここで A2 Te83Ge7Se10 B2 Te63Ge7Se30 C2 Te45Ge25Se30 D2 Te45Ge35Se20 E2 Te55Ge35Se10 さらに第2図において、A3−B3−C3−D3−E3で囲まれた
範囲でAu濃度が10〜25at%の領域は記録感度が高くかつ
安定な材料組成である。In this case A 2 Te 83 Ge 7 Se 10 B 2 Te 63 Ge 7 Se 30 C 2 Te 45 Ge 25 Se 30 D 2 Te 45 Ge 35 Se 20 E 2 Te 55 Ge 35 Se 10 further Figure 2, A 3 -B 3 -C 3 -D 3 area Au concentration of 10~25At% in range surrounded by -E 3 is a high and stable material composition recording sensitivity.
ここで A3 Te75Ge10Se15 B3 Te65Ge10Se25 C3 Te50Ge25Se25 D3 Te50Ge30Se20 E3 Te55Ge30Se15である。Here, it is A 3 Te 75 Ge 10 Se 15 B 3 Te 65 Ge 10 Se 25 C 3 Te 50 Ge 25 Se 25 D 3 Te 50 Ge 30 Se 20 E 3 Te 55 Ge 30 Se 15 .
中でも (Te80-pGepSe20)100-mAumにおいて10p25,15m
25at%の領域が最も感度が良く、安定な組成領域であ
る。Above all, (Te 80-p Ge p Se 20 ) 100-m Au m 10p25,15m
The 25at% region is the most sensitive and stable composition region.
次に本発明に用いる光学情報記録部材の製法について述
べる。Next, a method for producing the optical information recording member used in the present invention will be described.
第3図は、本発明の記録層を用いて構成した光ディスク
の断面の模式図である。図において、1,5は基板を表わ
しており、材質は、ポリカーボネート,アクリル樹脂,
ガラス,ポリエステル等の透明な基材を用いることが可
能である。2,4は透明な薄層で、種々の酸化物,硫化
物,炭化物を用いることができる。この層2,4は記録膜
3の記録・消去の繰り返しによる基材の熱劣化を防ぐも
のであり、さらに、記録膜3を湿度より保護するもので
ある。したがって、透明層2,4の材質は、上述した観点
より決定される。記録膜3は、蒸着,スパッタリング等
によって形成される。蒸着で行なう場合は各組成を単独
に蒸着可能な4ソース蒸着機を用いるのが、均一膜を作
成できるので望ましい。FIG. 3 is a schematic view of a cross section of an optical disc formed by using the recording layer of the present invention. In the figure, 1 and 5 represent substrates, and the materials are polycarbonate, acrylic resin,
It is possible to use a transparent substrate such as glass or polyester. 2 and 4 are transparent thin layers, and various oxides, sulfides, and carbides can be used. The layers 2 and 4 prevent thermal deterioration of the base material due to repeated recording / erasing of the recording film 3, and further protect the recording film 3 from humidity. Therefore, the material of the transparent layers 2 and 4 is determined from the above viewpoint. The recording film 3 is formed by vapor deposition, sputtering or the like. When vapor deposition is used, it is preferable to use a 4-source vapor deposition machine capable of vapor depositing each composition independently, because a uniform film can be formed.
次にTe,Ge,Se,Au系の光学特性について述べる。Next, the optical characteristics of the Te, Ge, Se, Au system will be described.
Te,Ge,Se,Au系の薄膜の光学定数はλ=780〜830nmにお
いて 非晶質状態 屈折率 na4.2 消衰係数ka1.3 結晶 〃 〃 nc4.6 〃 kc2.2 であった。この値はガラス基板上に蒸着された(Te60Ge
20Se20)80Au20膜厚100nmの薄膜の透過率および反射率
から導びいた。非晶質状態はas depo状態、結晶状態は
それを300℃5分間窒素ガス中でアニールした状態の測
定値である。他の組成領域においても同様の測定をした
ところ図2においてA1−B1−C1−D1−E1かつAu濃度5〜
40at%では na 4.0〜4.5 ka 1.1〜1.6 nc 4.5〜5.0 kc 2.0〜2.8 の範囲であった。The optical constants of the Te, Ge, Se, and Au thin films were λ = 780 to 830 nm in the amorphous state with the refractive index n a 4.2 extinction coefficient k a 1.3 crystal 〃 〃 n c 4.6 〃 k c 2.2. This value was deposited on a glass substrate (Te 60 Ge
20 Se 20 ) 80 Au 20 Derived from the transmittance and reflectance of a 100 nm thin film. The amorphous state is the measured value in the as depo state, and the crystalline state is the measured value in the state annealed in nitrogen gas at 300 ° C. for 5 minutes. When the same measurement was performed in other composition regions, in FIG. 2, A 1 -B 1 -C 1 -D 1 -E 1 and an Au concentration of 5 to 5 were obtained.
At 40 at%, the range was n a 4.0 to 4.5 k a 1.1 to 1.6 n c 4.5 to 5.0 k c 2.0 to 2.8.
通常、相転移型の光記録媒体は媒体上にレーザ光を照射
してその反射光の変化を検出するか、透過光の変化を検
出するかして信号を再生するが、反射光を検出する方法
が光学系がコンパクトになり有利であり、主流となって
いる。反射率による信号再生の場合、記録状態(非晶質
状態)の反射率Raと未記録状態あるいは消去状態(結晶
状態)の反射率Rcの差,Rc−Ra,が大きい程信号振巾は大
きくなる。また媒体のノイズは反射率Ra,Rcに比例して
再生される。したがって信号のSN比は次で定義されるシ
グナルコントラストで表わすことが出来る。Normally, a phase-transition type optical recording medium reproduces a signal by irradiating a laser beam on the medium and detecting a change in its reflected light or a change in transmitted light, but detects a reflected light. The method is advantageous because the optical system becomes compact, and it is the mainstream method. For signal reproduction by reflectance, the difference in reflectance R c of the unrecorded state or erased state and the reflectance R a recorded state (amorphous state) (crystalline state), as R c -R a, is large signal The swing becomes large. Further, the noise of the medium is reproduced in proportion to the reflectances R a and R c . Therefore, the signal-to-noise ratio can be expressed by the signal contrast defined below.
本発明に用いるような記録媒体の反射率は多層薄膜の干
渉の問題として取り扱かわれ反射率は各相の厚さ,屈折
率,消衰係数によって決まる。各層の定数からトータル
の反射率を求める方法は、光学の一般的な教科書、例え
ば久保田広著「光学」岩波書店(P200〜)に詳述されて
いる。 The reflectance of the recording medium used in the present invention is treated as a problem of interference of the multilayer thin film, and the reflectance is determined by the thickness of each phase, the refractive index, and the extinction coefficient. The method of obtaining the total reflectance from the constants of each layer is described in detail in a general textbook of optics, for example, Hiroshi Kubota "Optics" Iwanami Shoten (P200-).
本発明に用いる記録媒体は第3図に示されるように、基
材,第1の透明薄層,記録膜,第2の透明薄層,保護基
材の5層からなっている。As shown in FIG. 3, the recording medium used in the present invention comprises five layers of a substrate, a first transparent thin layer, a recording film, a second transparent thin layer and a protective substrate.
基材として用いられるガラス,樹脂の屈折率は1.4〜1.
6,吸収は0である。The refractive index of the glass and resin used as the base material is 1.4 to 1.
6, absorption is 0.
媒体の反射率,Ra,Rc,を小さくするには透明薄層の屈折
率は、基材の屈折率と記録膜の屈折率の中間の値でその
両者の屈折率との差が大きいことが望ましい。したがっ
て透明薄層の屈折率は1.7〜4.0が使用可能で2〜3.5程
度が望ましい。この条件を満しかつ前述の耐熱,耐湿の
効果を有するものとしては、GeO2等の酸化物,Sic,Tic等
の炭化物,ZnS,ZnTe等のカルコゲン化物,SiN,BN等の窒化
物等が使用できる。The refractive index of the transparent thin layer is an intermediate value between the refractive index of the base material and the refractive index of the recording film in order to reduce the reflectance of the medium, R a , R c , and the difference between the two is large. Is desirable. Therefore, the refractive index of the transparent thin layer can be 1.7 to 4.0, and is preferably about 2 to 3.5. Examples of oxides such as GeO 2 , carbides such as Sic and Tic, chalcogenides such as ZnS and ZnTe, and nitrides such as SiN and BN are those that satisfy this condition and have the above-mentioned heat resistance and moisture resistance. Can be used.
Te,Ge,Se,Au系薄膜の光学定数を用いて第1の透明層,
記録膜,第2の透明層の3層の厚さを変化させたときの
シグナルコントラストS.C.の計算結果を第4図a〜hに
示す、計算はマトリクス法を用いた。各図は記録膜厚一
定で、たて軸に第1の透明層、横軸に第2の透明層の厚
さを屈折率nと厚さtの積すなわち光学的長さで示して
いる。計算に用いた基材の屈折率1.5,透明薄層の屈折率
2.4,波長は830nmである。First transparent layer using optical constants of Te, Ge, Se and Au thin films,
The calculation results of the signal contrast SC when the thicknesses of the three layers of the recording film and the second transparent layer are changed are shown in FIGS. 4A to 4H. The matrix method was used for the calculation. In each figure, the recording film thickness is constant, and the vertical axis shows the thickness of the first transparent layer and the horizontal axis shows the thickness of the second transparent layer by the product of the refractive index n and the thickness t, that is, the optical length. Refractive index of substrate used for calculation 1.5, refractive index of transparent thin layer
2.4, the wavelength is 830 nm.
図において、透明薄層は0〜λ/2の範囲を示しているが
これは吸収のない薄層は厚さがλ/2周期で同じ効果を持
つからである。従ってここに示す光学長に対して±λ/2
i(iは0または正の整数)の光学長に相当する厚さに
おいても同じシグナルコントラストを与える。In the figure, the transparent thin layer shows the range of 0 to λ / 2, because the thin layer without absorption has the same effect in the period of λ / 2. Therefore, for the optical length shown here ± λ / 2
The same signal contrast is provided even at a thickness corresponding to an optical length of i (i is 0 or a positive integer).
一般的にいって光の干渉においては光強度と位相とに分
けて考えることが出来る。位相は光学的長さで決まり、
また強度は界面の反射率すなわち界面の両側の屈折率に
よって決まる。従って、ここで計算したものと屈折率の
異なる透明薄層を考え場合、光学長で考えれば位相の効
果は等しく、界面の反射率の効果に差が出る。しかしこ
こで用いている定数範囲ではその効果は小さく、第4図
に示した計算結果で議論してさしつかえない範囲であ
る。Generally speaking, in light interference, light intensity and phase can be considered separately. The phase is determined by the optical length,
The intensity is determined by the reflectance of the interface, that is, the refractive index on both sides of the interface. Therefore, when a transparent thin layer having a refractive index different from that calculated here is considered, the effect of the phase is the same when considered in terms of the optical length, and the effect of the reflectance at the interface is different. However, the effect is small in the constant range used here, which is a range that can be discussed with the calculation result shown in FIG.
第4図から、シグナルコントラストが50%以上の範囲を
各膜厚毎に示したのが第1表である。第1表より、記録
膜の膜厚t2が70t2140nmかつ第一の透明薄層の光学
長n1t1が、 の範囲がシグナルコントラストが大きいといえる。さら
に、シグナルコントラストが80%以上の範囲を第2表に
示す。これから記録膜の膜厚t2が80t2110nmかつ第
1の透明層の光学長n1t1が、 第2の透明層の光学長n3t3が、 の範囲が特にシグナルコントラストの大きい領域であ
る。From FIG. 4, Table 1 shows the range where the signal contrast is 50% or more for each film thickness. From Table 1, the thickness t 2 of the recording film is 70 t 2 140 nm and the optical length n 1 t 1 of the first transparent thin layer is It can be said that the signal contrast is large in the range. Further, Table 2 shows the range where the signal contrast is 80% or more. From this, the thickness t 2 of the recording film is 80 t 2 110 nm and the optical length n 1 t 1 of the first transparent layer is The optical length n 3 t 3 of the second transparent layer is The range of is a region where the signal contrast is particularly large.
実施例1 基材および保護基材にPMMA樹脂(n=1.49)、第1,第2
の透明層にZnS蒸着膜(n=2.4)、記録膜に(Te60Ge20
Se20)80Au20を用い、φ200mmのディスクを構成し、波
長830nmの半導体レーザをNA0.5の対物レンズでφ0.9μ
mに絞って記録膜面上に収束させて記録,再生を行っ
た。また信号の消去は波長780nmの半導体レーザを同じ
対物レンズでディスクの回転方向に長さ10μmの長円形
に絞って照射して行った。Example 1 PMMA resin (n = 1.49) as the base material and the protective base material, the first and second
ZnS deposited film (n = 2.4) on the transparent layer and (Te 60 Ge 20
Se 20 ) 80 Au 20 is used to construct a disk with a diameter of 200 mm, and a semiconductor laser with a wavelength of 830 nm is used with an NA 0.5 objective lens to achieve a diameter of 0.9 μ.
Recording and reproduction were performed by focusing on m and converging on the recording film surface. Further, the signal was erased by irradiating a semiconductor laser having a wavelength of 780 nm with the same objective lens to narrow it down to an ellipse of 10 μm in the rotation direction of the disk.
記録膜厚および透明層厚を変えて記録再生実験を行った
結果を表3に示す。Table 3 shows the results of the recording / reproducing experiment in which the recording film thickness and the transparent layer thickness were changed.
ここに示すCNRは900rpmで回転するディスクのφ120の位
置であらかじめ消去した状態に2MHzの単一周波数で記録
を行ったときの再生信号のCNRである。記録,消去のパ
ワーはあらかじめ各ディスクの使用する半導体レーザ光
に対する吸収係数を算出し、同エネルギーが吸収される
ように調整した。記録時には、7mW、消去時には16mW、
膜に吸収させた。再生パワーは0.9mWである。CNRはバン
ド幅30KHzで測定した。The CNR shown here is the CNR of a reproduction signal when recording is performed at a single frequency of 2 MHz in a state of being erased in advance at a position of φ120 on a disc rotating at 900 rpm. The recording and erasing power was adjusted so that the same energy was absorbed by previously calculating the absorption coefficient for the semiconductor laser light used by each disk. 7mW when recording, 16mW when erasing,
Absorbed on the membrane. The reproduction power is 0.9mW. CNR was measured with a bandwidth of 30 KHz.
表−3により、記録膜膜厚50〜130nmかつ第1の透明層
の光学長が9/64λ〜λ/2ではCNR45dBが得られること
がわかる。 Table 3 shows that CNR of 45 dB is obtained when the recording film thickness is 50 to 130 nm and the optical length of the first transparent layer is 9 / 64λ to λ / 2.
発明の効果 本発明の光学記録再生方法によると光学定数の変化の比
較的小さい材料を用いて高いSN比の信号記録再生が可能
である。Effects of the Invention According to the optical recording / reproducing method of the present invention, signal recording / reproducing with a high SN ratio can be performed by using a material having a relatively small change in optical constant.
第1図は本発明の一実施例における光学記録再生方法を
示す模式図、第2図は本発明に用いる記録膜の組成の範
囲を示す組成図、第3図は本発明に用いる記録媒体の断
面を示す模式図、第4図(a)〜第4図(h)は各記録
膜膜厚におけるシグナルコントラストの計算値と第1,第
2の透明層の光学表との関係を示すグラフである。 1……基材、2,4……透明薄層、5……保護基材、6…
…光源、7……ビームスプリッター、8……光検出器。FIG. 1 is a schematic diagram showing an optical recording / reproducing method in one embodiment of the present invention, FIG. 2 is a composition diagram showing a composition range of a recording film used in the present invention, and FIG. 3 is a recording medium used in the present invention. FIGS. 4 (a) to 4 (h) are schematic views showing the cross section, and graphs showing the relationship between the calculated values of the signal contrast in each recording film thickness and the optical tables of the first and second transparent layers. is there. 1 ... Substrate, 2,4 ... Transparent thin layer, 5 ... Protective substrate, 6 ...
... light source, 7 ... beam splitter, 8 ... photodetector.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 G11B 7/24 A 7215−5D ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location G11B 7/24 A 7215-5D
Claims (3)
有する薄層を設け、この薄層上に光照射により光学的特
性の変化する記録薄膜の層を設け、さらにこの上に第2
の透明な屈折率n3を有する薄層を設けた光記録媒体上に
前記記録薄膜の光学特性を変化させて情報を記録し、こ
れを波長λ(nm)の光で光学的に再生する方法であっ
て、前記記録薄膜がTe,Ge,SeおよびAuからなる材料で形
成され、Te,Ge,Seの原子数比が第2図の A1(Te90Ge5Se5),B1(Te60Ge5Se35) C1(Te40Ge25Se35),D1(Te40Ge40Se20) E1(Te55Ge40Se5)の各点で囲まれる領域内に有り、Au
の濃度(at%)が全体の組成(TexGeySez)100-mAumに
おいて5≦m≦40at%である薄膜からなり、かつ厚さt2
が70≦t2≦140mnの範囲であり、第1の透明な薄層の厚
さt1が再生に使う光の波長λに対して の範囲にあることを特徴とする光学記録再生方法。 1. A thin layer having a first transparent refractive index n 1 is provided on a transparent substrate, and a layer of a recording thin film whose optical characteristics are changed by light irradiation is provided on the thin layer. Second on this
A method for recording information by changing the optical characteristics of the recording thin film on an optical recording medium provided with a thin layer having a transparent refractive index n 3 and optically reproducing the information with light having a wavelength λ (nm). The recording thin film is formed of a material composed of Te, Ge, Se and Au, and the atomic ratio of Te, Ge and Se is A 1 (Te 90 Ge 5 Se 5 ), B 1 ( Te 60 Ge 5 Se 35 ) C 1 (Te 40 Ge 25 Se 35 ), D 1 (Te 40 Ge 40 Se 20 ) E 1 (Te 55 Ge 40 Se 5 ).
Of a thin film having a concentration (at%) of 5 ≦ m ≦ 40 at% in the entire composition (Te x Ge y Se z ) 100-m Au m and a thickness t 2
Is in the range of 70 ≦ t 2 ≦ 140 mn, and the thickness t 1 of the first transparent thin layer is relative to the wavelength λ of the light used for reproduction. The optical recording / reproducing method is characterized in that
であり、第1の透明な薄層の厚さt1が 第2の透明な薄層の厚さt3が の範囲にあることを特徴とする特許請求の範囲第1項記
載の光学記録再生方法。2. The thickness t 2 of the recording thin film is in the range of 80 ≦ t 2 ≦ 110 mn, and the thickness t 1 of the first transparent thin layer is The thickness t 3 of the second transparent lamina is The optical recording / reproducing method according to claim 1, wherein the optical recording / reproducing method is in the range.
びn3が1.7〜4.0であることを特徴とする特許請求の範囲
第1項記載の光学記録再生方法。3. The optical recording / reproducing method according to claim 1 , wherein the refractive indices n 1 and n 3 of the first and second transparent thin layers are 1.7 to 4.0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61046539A JPH0792931B2 (en) | 1986-03-04 | 1986-03-04 | Optical recording / reproducing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61046539A JPH0792931B2 (en) | 1986-03-04 | 1986-03-04 | Optical recording / reproducing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62204449A JPS62204449A (en) | 1987-09-09 |
| JPH0792931B2 true JPH0792931B2 (en) | 1995-10-09 |
Family
ID=12750097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61046539A Expired - Lifetime JPH0792931B2 (en) | 1986-03-04 | 1986-03-04 | Optical recording / reproducing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0792931B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2834150B2 (en) * | 1988-10-03 | 1998-12-09 | 株式会社日立製作所 | Optical information recording medium and optical information recording method |
-
1986
- 1986-03-04 JP JP61046539A patent/JPH0792931B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62204449A (en) | 1987-09-09 |
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