JPH0793068B2 - Highly insulating substrate manufacturing method - Google Patents
Highly insulating substrate manufacturing methodInfo
- Publication number
- JPH0793068B2 JPH0793068B2 JP59187036A JP18703684A JPH0793068B2 JP H0793068 B2 JPH0793068 B2 JP H0793068B2 JP 59187036 A JP59187036 A JP 59187036A JP 18703684 A JP18703684 A JP 18703684A JP H0793068 B2 JPH0793068 B2 JP H0793068B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating substrate
- insulating film
- metal foil
- thin film
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000002184 metal Substances 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000010408 film Substances 0.000 claims description 32
- 239000011888 foil Substances 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 22
- 239000012212 insulator Substances 0.000 claims description 3
- 229920006254 polymer film Polymers 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 230000002950 deficient Effects 0.000 description 10
- 230000007547 defect Effects 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Insulating Bodies (AREA)
- Non-Insulated Conductors (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は高絶縁性基板の製法に関する。TECHNICAL FIELD The present invention relates to a method for producing a highly insulating substrate.
［従来の技術］ 従来より、金属箔／絶縁膜／金属薄膜なる構造を有する
絶縁性基板が、プリント基板、太陽電池用基板、IC基板
などに使用されている。[Prior Art] Conventionally, an insulating substrate having a structure of metal foil / insulating film / metal thin film has been used for a printed circuit board, a solar cell substrate, an IC substrate and the like.
前記のごとき絶縁性基板は、通常、金属箔と絶縁膜とを
接着させて金属箔／絶縁膜なる構造を有する層を形成し
たのち、絶縁膜上に真空蒸着法またはスパッタ法で金属
薄膜を堆積させる方法や、絶縁膜のそれぞれの面にそれ
ぞれ金属箔および金属薄膜をラミネートする方法などに
より製造されている。In the insulating substrate as described above, a metal foil and an insulating film are usually adhered to each other to form a layer having a structure of a metal foil / insulating film, and then a metal thin film is deposited on the insulating film by a vacuum deposition method or a sputtering method. And a method of laminating a metal foil and a metal thin film on each surface of the insulating film.
このようにして製造される絶縁性基板ではあるが、絶縁
膜に導通部分や潜在的な絶縁不良部分が含まれているば
あいには、製品として使用中に該絶縁不良部分から絶縁
不良になったりする。Although the insulating substrate is manufactured as described above, if the insulating film includes a conductive portion or a potential defective insulation portion, the defective insulation portion causes defective insulation during use as a product. Or
前記絶縁膜の欠陥の大部分は、金属箔上の凹凸や絶縁膜
中のボイドなどに起因する。それゆえ、該欠陥を除去す
る方法として、金属箔を鏡面仕上したり、絶縁膜の厚さ
を厚くするなどの方法が採用されているが、このような
方法を採用すると製造コストが高くなる、鏡面仕上にす
るばあいには絶縁膜と金属箔との接着不良がおこったり
する、絶縁膜を厚くするばあいには加熱時に金属薄膜に
クラックが入りやすくなったりするなどの問題が生ず
る。しかも前記のごとき方法を採用しても導通部分や潜
在的な絶縁不良部分を完全になくすことはできない。Most of the defects of the insulating film are caused by unevenness on the metal foil, voids in the insulating film, and the like. Therefore, as a method of removing the defects, a method such as mirror-finishing the metal foil or increasing the thickness of the insulating film is adopted, but if such a method is adopted, the manufacturing cost increases. Problems such as poor adhesion between the insulating film and the metal foil may occur when the mirror finish is used, and cracks may easily occur in the metal thin film during heating when the insulating film is thickened. Moreover, even if the above method is adopted, it is not possible to completely eliminate the conductive portion and the potential defective insulation portion.
［発明が解決しようとする問題点］ 本発明は、前記のごとき方法により製造した絶縁基板に
おける導通部分や潜在的な絶縁不良を排除しようとする
ばあいに生じる、製造コストが高くなるという問題や、
絶縁膜と金属箔との接着不良あるいは加熱時に金属薄膜
にクラックが入りやすくなったりするという問題などを
解決するためになされたものである。[Problems to be Solved by the Invention] The present invention has the problem of increasing the manufacturing cost, which occurs when attempting to eliminate a conductive portion or a potential insulation defect in an insulating substrate manufactured by the above method. ,
This is done in order to solve problems such as poor adhesion between the insulating film and the metal foil or cracks in the metal thin film when heated.
［問題点を解決するための手段］ 本発明は厚さ10μｍ以上の金属箔／絶縁膜／厚さ100Å
〜１μｍの金属薄膜なる構造を有する絶縁性基板を製造
したのち、金属箔−金属薄膜間に耐電圧の７〜93％の電
圧を印加して10msec〜５分間処理することを特徴とする
高絶縁性基板の製法に関する。[Means for Solving Problems] In the present invention, a metal foil having a thickness of 10 μm or more / insulating film / thickness 100Å
After manufacturing an insulating substrate having a structure of a metal thin film of ˜1 μm, a voltage of 7 to 93% of the withstand voltage is applied between the metal foil and the metal thin film, and a treatment is performed for 10 msec to 5 minutes. The manufacturing method of the flexible substrate.
［実施例］ 本発明に用いる金属箔とは、たとえば鉄、SUS、Cu、N
i、リン青銅など、好ましくはこれらの金属のうち熱伝
導率の高い金属から製造された金属箔で、厚さが10μｍ
以上、好ましくは50μｍ〜1mm、表面粗度1.0μｍ以下、
好ましくは0.5μｍ以下のものである。[Example] The metal foil used in the present invention includes, for example, iron, SUS, Cu, N
i, phosphor bronze, etc., preferably a metal foil made of a metal having a high thermal conductivity among these metals and having a thickness of 10 μm
Or more, preferably 50 μm to 1 mm, surface roughness 1.0 μm or less,
It is preferably 0.5 μm or less.
前記金属箔の厚さが10μｍ未満になると、必要とされる
強度がえられにくくなったり、絶縁膜の内部応力に起因
する歪によりカールする傾向が生じ、たとえば1mmをこ
えて厚くなるとかたくなり、可撓性が必要なばあいなど
には所望の可撓性などがえられにくくなったりしがちで
ある。When the thickness of the metal foil is less than 10 μm, it becomes difficult to obtain the required strength, or a tendency is caused to curl due to strain due to the internal stress of the insulating film, which becomes harder than 1 mm, for example. When flexibility is required, it tends to be difficult to obtain desired flexibility.
一方、前記金属箔の表面粗度が1.0μｍをこえると、製
造される絶縁性基板の絶縁性がわるくなりがちであり、
0.5μｍ以下であることが望ましい。逆に表面粗度が0.0
5μｍ以下では絶縁膜との付着強度が低下するばあいが
ある。On the other hand, if the surface roughness of the metal foil exceeds 1.0 μm, the insulating substrate produced tends to have poor insulation properties.
It is preferably 0.5 μm or less. Conversely, the surface roughness is 0.0
If the thickness is 5 μm or less, the adhesion strength with the insulating film may decrease.
本発明に用いる絶縁膜としては、たとえばポリアミドや
ポリアミドイミドのごとき高分子系物質を金属箔にコー
ティングしたりして形成した高分子フィルムや、SiO2、
Al2O3、TiO2などの無機物を金属箔に蒸着させたりして
形成した無機物からなる絶縁物や、SiC、SiN、SiCO、Si
CNなどのグロー放電分解法や光CVD法などにより金属箔
上に形成した非単結晶状半導体あるいは非単結晶状絶縁
体からなる絶縁膜などがあげられるが、これらに限定さ
れるものではない。The insulating film used in the present invention, for example, a polymer film formed by coating a metal foil with a polymer-based material such as polyamide or polyamide-imide, or SiO 2 ,
Insulators made of inorganic substances such as Al 2 O 3 and TiO 2 deposited on metal foil, SiC, SiN, SiCO, Si
Examples thereof include, but are not limited to, an insulating film made of a non-single crystalline semiconductor or a non-single crystalline insulator formed on a metal foil by a glow discharge decomposition method such as CN or a photo CVD method.
前記絶縁膜の厚さや絶縁性にはとくに限定はないが、1m
m以上では潜在的な絶縁不良部分を実質的に電圧破壊で
きないばあいが生ずる。The thickness and insulating property of the insulating film are not particularly limited, but 1 m
Above m, there is a case where the potential insulation failure cannot be destroyed by voltage.
本発明に用いる金属薄膜としては、蒸着法、スパッタ法
あるいはメッキ法などにより絶縁膜上に形成されたCr、
Ag、Ni、SUS、Cuなどからなる厚さ100Å〜１μｍ、好ま
しくは200〜5000Åの金属薄膜があげられる。As the metal thin film used in the present invention, Cr formed on the insulating film by a vapor deposition method, a sputtering method or a plating method,
A metal thin film made of Ag, Ni, SUS, Cu or the like and having a thickness of 100Å to 1 μm, preferably 200 to 5000Å can be used.
前記金属薄膜の厚さが100Å未満になると、該薄膜が島
状になり、面内抵抗が異常に大きくなる傾向が生じ、１
μｍをこえると、電圧を印加しても導通部分の絶縁性が
回復しない傾向が生じ、いずれも好ましくない。一方、
該厚さが100Å〜１μｍ、さらに200〜5000Åのばあいに
は、前記のごとき問題がほとんどなくなるとともに、金
属箔−金属薄膜間の抵抗がどこをとっても50kΩ/cm2以
上、好ましくは100kΩ/cm2以上となる。When the thickness of the metal thin film is less than 100Å, the thin film becomes island-shaped, and the in-plane resistance tends to be abnormally large.
When it exceeds μm, the insulating property of the conductive portion tends not to be recovered even when a voltage is applied, which is not preferable. on the other hand,
When the thickness is 100 Å to 1 μm, and further 200 to 5,000 Å, the above problems are almost eliminated and the resistance between the metal foil and the metal thin film is 50 kΩ / cm 2 or more, preferably 100 kΩ / cm. 2 or more.
本発明においては、厚さ10μｍ以上の金属箔／絶縁膜／
厚さ100Å〜１μｍの金属薄膜なる構造を有する絶縁性
基板を製造したのち、金属箔−金属薄膜間に電圧が印加
される。In the present invention, a metal foil having a thickness of 10 μm or more / insulating film /
After manufacturing an insulating substrate having a structure of a metal thin film having a thickness of 100Å to 1 μm, a voltage is applied between the metal foil and the metal thin film.
電圧の印加は、製造された絶縁性基板中に存在する絶縁
不良を検出し、品質管理に利用するとともに、導通部分
を破壊して絶縁性にし、かつ該絶縁性基板を使用して製
造した製品の使用中に、潜在的な絶縁不良部分に起因し
て生ずる絶縁不良によるトラブルを未然に防止するた
め、絶縁性基板中に存在する潜在的な絶縁不良部分をあ
らかじめ消滅されることを目的として行なわれる処理で
ある。電圧を印加して絶縁性基板中に存在する潜在的な
絶縁不良部分が顕在化したばあいには、この部分を除去
することにより所望の高絶縁性基板がえられる。The application of voltage detects insulation defects existing in the manufactured insulating substrate and uses it for quality control, and also destroys the conductive part to make it insulating, and the product manufactured using the insulating substrate. In order to prevent problems due to defective insulation caused by potential defective insulation during use, the purpose is to eliminate the potential defective insulation existing in the insulating substrate in advance. This is a process that is performed. When a potential insulation defective portion existing in the insulating substrate is exposed by applying a voltage, the desired highly insulating substrate can be obtained by removing this portion.
金属箔−金属薄膜間に印加する電圧は、絶縁性基板の用
途などにより異なり一概には決定できないが、通常、絶
縁膜の耐電圧の７〜93％、好ましくは10〜50％の電圧で
あり、電圧印加時間としては10msec〜５分間程度であ
る。前記印加電圧が絶縁膜の耐電圧の７％未満のばあい
は、絶縁膜中に存在する導通部分や潜在的な絶縁不良部
分を消滅させることができず、93％をこえると絶縁性の
高い部分も破壊される傾向が生じる。通常、1cm2当りの
金属箔−金属薄膜間の抵抗がどこをとっても50kΩ以
上、好ましくは100kΩ以上になるためには、絶縁膜の耐
電圧の10〜50％程度の印加電圧が好ましく、民生用太陽
電池などに用いる絶縁基板のばあいには、1cm2当り1kΩ
以上になるような印加電圧が好ましい。The voltage applied between the metal foil and the metal thin film varies depending on the use of the insulating substrate and cannot be unconditionally determined, but it is usually 7 to 93%, preferably 10 to 50% of the withstand voltage of the insulating film. The voltage application time is about 10 msec to 5 minutes. When the applied voltage is less than 7% of the withstand voltage of the insulating film, the conductive portion and the potential defective insulation portion existing in the insulating film cannot be eliminated, and when the applied voltage exceeds 93%, the insulating property is high. The part also tends to be destroyed. Usually, in order for the resistance between the metal foil and the metal thin film per 1 cm 2 to be 50 kΩ or more, preferably 100 kΩ or more, the applied voltage of about 10 to 50% of the withstand voltage of the insulating film is preferable for consumer use. in the case of an insulating substrate used like a solar cell, 1 cm 2 per 1kΩ
The applied voltage as described above is preferable.
絶縁性基板に前記のごとき好ましい範囲の電圧を印加す
る方法にはとくに限定はなく、通常の過電流防止装置の
ついた直流電源を用い、金属箔を１つの極にし、金属薄
膜側からもう１つの極を接触させ、電流をモニターしな
がら必要時間印加するなどの方法が採用されうる。There is no particular limitation on the method of applying a voltage in the above-described preferable range to the insulating substrate. A direct current power supply with an ordinary overcurrent prevention device is used, the metal foil is made into one pole, and the metal thin film side A method of contacting two poles and applying a required time while monitoring the current may be adopted.
このようにして製造された高絶縁性基板は、太陽電池用
基板、IC基板、プリント基板などの用途に好適に使用さ
れうる。The highly insulating substrate thus manufactured can be suitably used for applications such as solar cell substrates, IC substrates, and printed circuit boards.
つぎに本発明の製法を実施例にもとづき説明する。Next, the production method of the present invention will be described based on examples.
実施例１〜５および比較例１ 10cm角の厚さ0.1mmのSUS板（表面粗度0.5μｍ）の片面
にポリイミド樹脂を３μｍ、同じSUS板の他方の面にグ
ロー放電法で光学禁止帯巾2.6eVのａ−SiC:Hを厚さ2.5
μｍになるように堆積させた。ついでポリイミド樹脂お
よびａ−SiC:H上にCrをスパッタ法で1000Å蒸着させ
た。Examples 1 to 5 and Comparative Example 1 A 10 cm square SUS plate with a thickness of 0.1 mm (surface roughness 0.5 μm) was coated with polyimide resin on one side of 3 μm, and the other side of the same SUS plate was measured by the glow discharge method with an optical bandgap. 2.6 eV a-SiC: H with a thickness of 2.5
It was deposited to have a thickness of μm. Then, Cr was vapor-deposited on the polyimide resin and a-SiC: H by 1000 Å by a sputtering method.
ポリイミド樹脂で絶縁したものの耐電圧は800V、ａ−Si
C:Hで絶縁したものの耐電圧は600Vであった。Withstand voltage of 800V, a-Si, insulated with polyimide resin
The withstand voltage of the product insulated with C: H was 600V.
えられた基板のSUS側が、Cr側がになるように直流
電圧を耐電圧の10〜90％の範囲で50msec印加したのち、
Crを1cm2サイズに分割できるようにエッチングして抵抗
を測定した。測定は50箇所で行なった。なお比較のため
に電圧を印加しないものについても抵抗を測定した。そ
れらの結果を第１表に示す。After applying DC voltage for 50 msec in the range of 10 to 90% of withstand voltage so that the SUS side of the obtained substrate is the Cr side,
The resistance was measured by etching so that Cr could be divided into 1 cm 2 sizes. The measurement was performed at 50 points. For comparison, the resistance was also measured for those to which no voltage was applied. The results are shown in Table 1.
［発明の効果］ 本発明の製法によると、金属箔−金属薄膜間に電圧を印
加して導通部分あるいは潜在的な絶縁不良部分を消滅さ
せるため、高絶縁性基板がえられる。さらに金属箔表面
の鏡仕上をしていないため、安価で絶縁膜と金属箔との
接着性の良好な絶縁性基板がえられる。その上、本発明
の製法では絶縁膜を厚くしたりしないため、原料コスト
が低く、かつ加熱時に金属薄膜にクラックが入りやすく
なったりするという問題もなくなる。 [Effect of the Invention] According to the manufacturing method of the present invention, a voltage is applied between the metal foil and the metal thin film to eliminate the conductive portion or the potential defective insulation portion, and thus a highly insulating substrate can be obtained. Further, since the surface of the metal foil is not mirror-finished, an inexpensive insulating substrate having good adhesion between the insulating film and the metal foil can be obtained. Moreover, since the insulating film is not thickened in the manufacturing method of the present invention, there is no problem that the raw material cost is low and the metal thin film is easily cracked during heating.
Claims (5)
0Å〜１μｍの金属薄膜なる構造を有する絶縁性基板を
製造したのち、金属箔−金属薄膜間に耐電圧の７〜93％
の電圧を印加して10msec〜５分間処理することを特徴と
する高絶縁性基板の製法。1. A metal foil having a thickness of 10 μm or more / an insulating film / a thickness of 10
After manufacturing an insulating substrate with a structure of a metal thin film of 0 Å to 1 μm, 7 to 93% of the withstand voltage is applied between the metal foil and the metal thin film.
The method for producing a highly insulating substrate, characterized in that the voltage is applied for 10 msec to 5 minutes.
求の範囲第１項記載の高絶縁性基板の製法。2. The method for producing a highly insulating substrate according to claim 1, wherein the insulating film is a polymer film.
特許請求の範囲第１項記載の高絶縁性基板の製法。3. The method for producing a highly insulating substrate according to claim 1, wherein the insulating film is an insulating film made of an inorganic material.
結晶状絶縁体からなる絶縁膜である特許請求の範囲第１
項記載の高絶縁性基板の製法。4. The insulating film according to claim 1, wherein the insulating film is made of a non-single crystalline semiconductor or a non-single crystalline insulator.
The method for producing a highly insulating substrate according to the item.
特許請求の範囲第１項記載の高絶縁性基板の製法。5. The method for producing a highly insulating substrate according to claim 1, wherein the metal thin film has a thickness of 200 to 5000 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59187036A JPH0793068B2 (en) | 1984-09-06 | 1984-09-06 | Highly insulating substrate manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59187036A JPH0793068B2 (en) | 1984-09-06 | 1984-09-06 | Highly insulating substrate manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6166317A JPS6166317A (en) | 1986-04-05 |
| JPH0793068B2 true JPH0793068B2 (en) | 1995-10-09 |
Family
ID=16199054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59187036A Expired - Lifetime JPH0793068B2 (en) | 1984-09-06 | 1984-09-06 | Highly insulating substrate manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793068B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840329B2 (en) * | 1975-09-30 | 1983-09-05 | 富士通株式会社 | Cotai Denkai Capacitor No Aging Houhou |
| JPH0238436Y2 (en) * | 1981-03-09 | 1990-10-17 | ||
| JPS58103178A (en) * | 1981-12-15 | 1983-06-20 | Kanegafuchi Chem Ind Co Ltd | Heat resistant thin film solar battery |
| JPS58213493A (en) * | 1982-06-04 | 1983-12-12 | 利昌工業株式会社 | Electrically insulating board |
-
1984
- 1984-09-06 JP JP59187036A patent/JPH0793068B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6166317A (en) | 1986-04-05 |
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