JPH0793097B2 - Electron-emitting device and manufacturing method thereof - Google Patents
Electron-emitting device and manufacturing method thereofInfo
- Publication number
- JPH0793097B2 JPH0793097B2 JP33074089A JP33074089A JPH0793097B2 JP H0793097 B2 JPH0793097 B2 JP H0793097B2 JP 33074089 A JP33074089 A JP 33074089A JP 33074089 A JP33074089 A JP 33074089A JP H0793097 B2 JPH0793097 B2 JP H0793097B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode material
- electron
- cathode
- emitting device
- predetermined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010406 cathode material Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000005530 etching Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910034327 TiC Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Cold Cathode And The Manufacture (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、平板形表示装置等に用いられる電子放出素子
とその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device used in a flat panel display device and a method for manufacturing the same.
従来の技術 最近、平板形表示装置等に用いられる電子源として冷陰
極を用いた電子放出素子の開発が活発に行なわれてい
る。2. Description of the Related Art Recently, an electron-emitting device using a cold cathode as an electron source used in a flat panel display device has been actively developed.
この冷陰極（電界放出型陰極）は、電子放出を行なわせ
るために針の先端の曲率が10μｍ以下となるように加工
し、その陰極エミッタ先端に、106V/cm程度の強電界が
集中するように構成されている。冷陰極は、一般に次の
ような長所を有する。（１）電流密度が高い、（２）陰
極を加熱する必要がないので電力消費が非常に少ない、
（３）点（ポイント）および線（ライン）電子線源とし
て使用できる、の３点である。This cold cathode (field emission type cathode) is processed so that the tip of the needle has a curvature of 10 μm or less in order to emit electrons, and a strong electric field of about 10 6 V / cm is concentrated at the cathode emitter tip. Is configured to. The cold cathode generally has the following advantages. (1) High current density, (2) Very low power consumption because it is not necessary to heat the cathode,
(3) A point and a line can be used as an electron beam source.
また、これらの冷陰極は、多数の冷陰極をアレイ状に配
列させた冷陰極アレイも知られている。同アレイを用
い、平面パネルディスプレイなどに使う試みもなされて
いる。As these cold cathodes, a cold cathode array in which many cold cathodes are arranged in an array is also known. Attempts have also been made to use the array for flat panel displays and the like.
この冷陰極アレイの製造方法として種々の提案がなされ
ている。その一例として、ジャーナル・オブ・アプライ
ド・フィジックス,3504〜3505頁,No7,第39巻,1968年（J
OURNAL OF APPLIED PHYSICS,P.3504〜1505,No7,Vol.39,
1968）に記載されている方法について第７図（ａ），
（ｂ）を参照しながら説明する。Various proposals have been made as a method for manufacturing this cold cathode array. As an example, Journal of Applied Physics, pp. 3504-3505, No 7, Vol. 39, 1968 (J
OURNAL OF APPLIED PHYSICS, P.3504 ~ 1505, No7, Vol.39,
1968), the method described in FIG. 7 (a),
Description will be given with reference to (b).
第７図（ａ）において、（電気）絶縁基板101の上に導
電性膜102、絶縁層103、および導電性膜104を適当なマ
スクを用いて順次蒸着し、複数のアレイ状に配列した空
洞105を作成し、次いで、回転斜蒸着によって適当な物
質107で漸次この空洞105の開口部を閉じさせつつ、この
開口部真上より陰極材料106を正蒸着することによって
空洞105内の導電性膜108を形成させ、最後に第７図
（ｂ）に示すように、物質107を除去するようにするこ
とにより冷陰極アレイが完成する。In FIG. 7 (a), a conductive film 102, an insulating layer 103, and a conductive film 104 are sequentially vapor-deposited on an (electrical) insulating substrate 101 using an appropriate mask, and cavities are arranged in a plurality of arrays. The conductive film in the cavity 105 is formed by forming the cathode material 106 and then positively vapor-depositing the cathode material 106 from directly above the opening 105 while gradually closing the opening of the cavity 105 with a suitable substance 107 by rotary oblique deposition. The cold cathode array is completed by forming 108 and finally by removing the substance 107 as shown in FIG. 7 (b).
次に、他の方法の一例として、特公昭54-17551号公報に
記載されている方法につき第８図（ａ）〜（ｆ）を参照
しながら説明する。Next, as another example of the method, the method described in JP-B-54-17551 will be described with reference to FIGS. 8 (a) to 8 (f).
第８図（ａ）〜（ｆ）において、電気絶縁性の矩形基板
51を複数個用意し、その一表面上に陰極材料薄膜52を被
着し、陰極薄膜付着基板53を複数個重ね合わせて一体化
した後、第８図（ａ）に示すように、重ね合わせ基板54
の各表面を機械研磨する。次いで、第８図（ｂ）に示す
ように、その広い一表面に金属55を蒸着し、第８図
（ｃ）に示すように、陰極材料52直上の金属55に、これ
と同程度の幅の狭い電子引き出し用の窓56をフォトエッ
チング法を利用して設ける。この後、陰極薄膜付着基板
53を分離し、第８図（ｄ）に示すように、それぞれの基
板53上の陰極材料薄膜52を、先端が鋭い山型のパターン
状にエッチング法によって加工する。このようにして得
たすべての基板53の陰極エミッタ57の先端近辺が基板51
から孤立し、かつ電子引き出し用窓56側の金属55が基板
51から棚状にせり出す程度まで適当な化学腐食によって
基板51を部分的に除去して空洞58を形成した基板53を作
る（第８図（ｅ））。ここでふたたび第８図（ｆ）に示
すように、分離する前の重ね合わせ基板54と同じように
なるように基板53を重ね合わせて固定することによって
薄膜冷陰極アレイが得られる。8 (a) to 8 (f), an electrically insulating rectangular substrate
A plurality of 51 are prepared, a cathode material thin film 52 is deposited on one surface thereof, and a plurality of cathode thin film-adhered substrates 53 are superposed and integrated, and then stacked as shown in FIG. 8 (a). Board 54
Mechanically polish each surface of. Then, as shown in FIG. 8 (b), a metal 55 is vapor-deposited on one of its wide surfaces, and as shown in FIG. 8 (c), the metal 55 immediately above the cathode material 52 is formed to have a width of the same degree. A narrow window 56 for drawing out electrons is provided by using a photoetching method. After this, the cathode thin film attached substrate
53 is separated, and as shown in FIG. 8 (d), the cathode material thin film 52 on each substrate 53 is processed into a mountain-shaped pattern with a sharp tip by an etching method. The vicinity of the tips of the cathode emitters 57 of all the substrates 53 thus obtained is the substrate 51.
The metal 55, which is isolated from the
The substrate 51 is partially removed by a suitable chemical corrosion to the extent that it protrudes from 51 into a shelf shape, and a substrate 53 having a cavity 58 is formed (FIG. 8 (e)). Here, as shown in FIG. 8 (f) again, a thin film cold cathode array is obtained by stacking and fixing the substrate 53 so that it becomes the same as the stacked substrate 54 before being separated.
発明が解決しようとする課題 しかし、以上のような構成では、複数のアレイ状の空洞
内に陰極エミッタ突起を作成する際、回転斜蒸着と真上
から行う正蒸着を同時に行うことが必要で、この同時蒸
着の制御を正確に行うことが必要であるという課題を有
していた。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, in the above-described configuration, when the cathode emitter protrusions are formed in a plurality of array-shaped cavities, it is necessary to simultaneously perform rotary oblique vapor deposition and normal vapor deposition performed from directly above. There is a problem that it is necessary to accurately control this simultaneous vapor deposition.
一方、電子引き出し用の窓と陰極との位置合わせ精度を
高めようとすると、電気絶縁性基板の板厚、および導電
性膜の膜厚の精度が高く要求され、かつ重ね合わせ基板
の分離前後での一体固定精度が同一である必要があり、
これらを精度よく固定することは非常に困難であるとい
う課題を有していた。On the other hand, in order to improve the alignment accuracy between the electron extraction window and the cathode, high accuracy is required for the thickness of the electrically insulating substrate and the film thickness of the conductive film, and before and after the separation of the superposed substrate. It is necessary that the integrated fixing accuracy of
There is a problem that it is very difficult to fix these with high accuracy.
本発明は、上記課題に鑑み、製造が容易な構造の電子放
出素子とその製造方法を提供するものである。In view of the above problems, the present invention provides an electron-emitting device having a structure that is easy to manufacture and a manufacturing method thereof.
課題を解決するための手段 本発明は、第１に断面の一部が矩形の形状をした陰極材
料と、絶縁層が絶縁基板の同一面上に形成され、絶縁層
は陰極材料の両側もしくは片側に所定の間隔をおいて配
置されており、絶縁層の表面には陰極材料から電子を引
き出すための制御電極を、陰極材料のエッジ部と制御電
極端とがほぼ平行になるように形成して電子放出素子を
構成し、陰極断面形状を矩形とし、そのエッヂ部に電界
が集中しやすい構造にすることにより、効率良く電子放
出が得られるようにしたものである。Means for Solving the Problems According to the present invention, firstly, a cathode material having a rectangular cross section and an insulating layer are formed on the same surface of an insulating substrate, and the insulating layer is provided on both sides or one side of the cathode material. Control electrodes for extracting electrons from the cathode material are formed on the surface of the insulating layer so that the edges of the cathode material and the control electrode ends are substantially parallel to each other. The electron-emitting device is configured to have a rectangular cross-sectional shape of the cathode and a structure in which an electric field easily concentrates on the edge portion thereof, so that electron emission can be efficiently obtained.
また、第２には、少なくとも陰極材料は平面的には楔状
をした部分を有するものである。Secondly, at least the cathode material has a wedge-shaped portion in plan view.
また、第３には、放出された電子が陰極面に垂直な方向
に進行するように、陰極面と同等、あるいはそれより高
い位置に制御電極を設けたものである。Thirdly, a control electrode is provided at a position equal to or higher than the cathode surface so that the emitted electrons travel in a direction perpendicular to the cathode surface.
また、第４には、陰極と制御電極の位置関係を精度良く
保つために、所定の形状に形成した陰極を基準に制御電
極を形成したものである。Fourthly, in order to maintain the positional relationship between the cathode and the control electrode with high accuracy, the control electrode is formed on the basis of the cathode formed in a predetermined shape.
また、第５には、それぞれ複数本の陰極と制御電極を直
交させ、その交点である電子放出部の陰極の平面形状を
ジグザグ形状にし、電子放出領域を多くしたものであ
る。Fifthly, a plurality of cathodes and control electrodes are made orthogonal to each other, and the planar shape of the cathode of the electron emission portion, which is the intersection thereof, is zigzag to increase the electron emission region.
作用 本発明は上記構成により、第１に陰極からの電子放出効
率を高く、かつ陰極と制御電極の耐電圧を高くすること
が可能となり、その結果信頼性を向上させることができ
る。Action The present invention, with the above-described structure, can firstly increase the electron emission efficiency from the cathode and increase the withstand voltage of the cathode and the control electrode, and as a result, the reliability can be improved.
また、第２に陰極と制御電極の位置合わせの高精度化が
可能となり、電子放出量の揃った電子放出素子を歩留ま
り良く製造することができる。Secondly, it is possible to improve the accuracy of alignment between the cathode and the control electrode, and it is possible to manufacture an electron-emitting device having a uniform electron emission amount with a high yield.
また、第３に陰極材料エッジ部に電界集中を起こさせ、
エミッション開始電圧の低下を図ることができる。Thirdly, the electric field is concentrated at the edge of the cathode material,
The emission start voltage can be reduced.
また、第４に１絵素当たりの電子放出量を多くできると
ともに、均一な電子放出特性のマトリックス電子放出源
を得ることができる。Fourthly, it is possible to increase the electron emission amount per pixel and to obtain a matrix electron emission source having uniform electron emission characteristics.
実施例 以下、本発明の第１実施例について説明する。Example Hereinafter, a first example of the present invention will be described.
第１図（ａ）、及び（ｂ）は電子放出素子のそれぞれ斜
視図、及び断面図である。第１図（ａ）、及び（ｂ）に
おいて、４は絶縁基板であり、絶縁基板４上には、陰極
材料１、絶縁層２、及び絶縁層２上に設けた制御電極３
である。FIGS. 1A and 1B are a perspective view and a cross-sectional view, respectively, of the electron-emitting device. In FIGS. 1A and 1B, 4 is an insulating substrate, on the insulating substrate 4, a cathode material 1, an insulating layer 2, and a control electrode 3 provided on the insulating layer 2.
Is.
以上のような第１図の構成において、陰極材料１はガラ
ス等の絶縁基板４の上に膜厚1000Å以上で形成され、そ
の材料として仕事関数が低く、かつ高融点のもの、例え
ばSiC,ZrC,TiC,Mo,W等を用いる。また、陰極材料１の幅
（ｗ）は、電子放出素子の用途によって決められるもの
であり、特に限定するものではない。陰極材料１の両
側、（片側でも良い）には、陰極材料１の厚さと少なく
とも同等以上のAl2O3，SiO2等からなる絶縁層２が陰極
材料１とは離れた位置で絶縁性基板４の上に形成され、
さらに絶縁層２の表面には、陰極から電子を引き出すた
めの金属膜等からなる制御電極３が形成される。In the structure shown in FIG. 1 as described above, the cathode material 1 is formed on the insulating substrate 4 such as glass with a film thickness of 1000 Å or more, and the material has a low work function and a high melting point, for example, SiC, ZrC. , TiC, Mo, W, etc. are used. The width (w) of the cathode material 1 is determined according to the application of the electron-emitting device and is not particularly limited. An insulating layer 2 made of Al 2 O 3 , SiO 2 or the like having a thickness at least equal to or more than the thickness of the cathode material 1 is provided on both sides of the cathode material 1 (at one side) at a position separated from the cathode material 1 by an insulating substrate. Formed on the 4
Further, on the surface of the insulating layer 2, a control electrode 3 made of a metal film or the like for extracting electrons from the cathode is formed.
上記の構造の電子放出素子は、陰極材料１に対して制御
電極３に正の電圧を印加すると、陰極材料１のエッヂ部
（第１図C,D）に電気力線が集中し、強電界となる。し
たがって従来よりも低い電圧を制御電極３に印加して、
陰極材料１のエッヂ部から電子を引き出すことができ
る。In the electron-emitting device with the above structure, when a positive voltage is applied to the control electrode 3 with respect to the cathode material 1, electric lines of force are concentrated in the edge portion (C, D in FIG. 1) of the cathode material 1 and a strong electric field is generated. Becomes Therefore, by applying a lower voltage than the conventional one to the control electrode 3,
Electrons can be extracted from the edge portion of the cathode material 1.
次に、第１図（ａ），（ｂ）に示した構造の電子放出素
子の製造方法につき第２図（ａ）〜（ｈ）を用いて説明
する。Next, a method for manufacturing the electron-emitting device having the structure shown in FIGS. 1 (a) and 1 (b) will be described with reference to FIGS. 2 (a) to 2 (h).
まず、第２図（ａ）に示すように、ガラス等の透光性の
絶縁性基板４の表面に、後述の陰極材料１を形成する部
分以外にホトレジスト５を形成する。そしてその上から
一面に陰極材料１を真空蒸着、スパッター等の方法で、
1000Å程度以上の膜厚に形成し、その後、ホトレジスト
５を除去する。この方法により絶縁性基板４上に陰極材
料１のパターンを形成することができる。以上のように
リフトオフ法で陰極材料１を形成すると、そのエッヂ部
（第２図（ｂ）に示すC,D部分）が鋭くなり、電子放出
効率を一段と高める。なお、透光性の絶縁基板４の表面
に所定の厚さの陰極材料１を形成した後、エッチング法
によって第２図（ｂ）のパターンの陰極材料１を形成し
ても良い。次に、第２図（ｃ）に示すように陰極材料１
が形成されている絶縁性基板４の表面にポジ型のホトレ
ジスト５′を塗布し、絶縁性基板４の陰極材料１とは反
対面側から紫外線平行光６を照射し、露光後ホトレジス
ト５′を現像すると第２図（ｄ）に示すように、陰極材
料１と同じパターンのホトレジスト５′がその上に形成
される。次にその上からAl2O3，SiO2等の絶縁材料２を
陰極材料層１の厚みと同等か、あるいはそれ以上の厚み
になるまで真空蒸着法等によって、全面に形成した後、
更にその上に電子引き出し用制御電極３となる金属膜を
所定の厚み（1000Å〜5000Å）で形成する。（第２図
（ｅ））その後、ホトレジスト５′を除去することによ
り、第２図（ｆ）に示すように、陰極材料１上の絶縁層
２と金属も同時に除去される。次に絶縁層２のみを軽く
エッチングし（第２図（ｇ））、続いて制御電極３とな
る金属も軽くエッチングすると、第２図（ｈ）に示すよ
うに、陰極材料１のエッヂ部が露出し、陰極材料幅
（ｗ）より少し広い間隔で電子引出し用制御電極３を形
成することができる。なお絶縁層２と制御電極３となる
金属のエッチングは、両者のエッチング液を所定の混合
比で混合したエッチング液等を用いて同時に行なっても
良い。また第２図（ｄ）において、ホトレジスト５′を
現像する際、現像時間を制御する等によって陰極材料１
の幅（ｗ）よりもわずかに広く、陰極材料１を覆うよう
にホトレジスト５′を形成すれば、第２図（ｇ），
（ｈ）で述べた工程を省略することができる。First, as shown in FIG. 2 (a), a photoresist 5 is formed on the surface of a translucent insulating substrate 4 such as glass, except for a portion where a cathode material 1 described later is formed. Then, the cathode material 1 is deposited on the entire surface from above by a method such as vacuum deposition and sputtering.
The film is formed to a film thickness of about 1000Å or more, and then the photoresist 5 is removed. By this method, the pattern of the cathode material 1 can be formed on the insulating substrate 4. When the cathode material 1 is formed by the lift-off method as described above, the edge portion (C and D portions shown in FIG. 2B) becomes sharp, and the electron emission efficiency is further enhanced. The cathode material 1 having a predetermined thickness may be formed on the surface of the translucent insulating substrate 4, and then the cathode material 1 having the pattern shown in FIG. 2B may be formed by the etching method. Next, as shown in FIG. 2 (c), the cathode material 1
A positive type photoresist 5'is applied to the surface of the insulating substrate 4 on which is formed, and ultraviolet parallel light 6 is irradiated from the side of the insulating substrate 4 opposite to the cathode material 1 to expose the photoresist 5'after exposure. When developed, a photoresist 5'having the same pattern as the cathode material 1 is formed thereon, as shown in FIG. 2 (d). Next, an insulating material 2 such as Al 2 O 3 or SiO 2 is formed on the entire surface by a vacuum deposition method or the like until the thickness is equal to or more than the thickness of the cathode material layer 1 from above,
Further, a metal film to be the electron extraction control electrode 3 is formed thereon with a predetermined thickness (1000Å to 5000Å). (FIG. 2 (e)) Thereafter, the photoresist 5'is removed, so that the insulating layer 2 and the metal on the cathode material 1 are simultaneously removed as shown in FIG. 2 (f). Next, only the insulating layer 2 is lightly etched (FIG. 2 (g)), and then the metal to be the control electrode 3 is also lightly etched. As shown in FIG. 2 (h), the edge portion of the cathode material 1 is removed. The control electrodes 3 for electron extraction can be formed at exposed intervals and at a distance slightly wider than the width (w) of the cathode material. Note that the etching of the metal to be the insulating layer 2 and the control electrode 3 may be performed at the same time by using an etching liquid or the like in which the etching liquids of the two are mixed at a predetermined mixing ratio. Further, in FIG. 2 (d), when the photoresist 5'is developed, the cathode material 1 is controlled by controlling the developing time.
If the photoresist 5'is formed so as to cover the cathode material 1 slightly wider than the width (w) of FIG.
The step described in (h) can be omitted.
次に、本発明の第２実施例について説明する。第３図
（ｂ）〜（ｆ）は電子放出素子の製造方法を示す工程ご
との素子の断面である。第３図（ｂ）〜（ｆ）は第２図
（ａ）〜（ｈ）に示した製造方法の中で（ｃ）（ｄ）の
工程を変えたものであり、同一符合を付けている。
（ｂ）は第２図（ｂ）と同一であり、透光性の絶縁基板
４に陰極材料１が所定の形状に形成されたものである。
次に第３図（ｃ）に示すように、ネガタイプのホトレジ
スト５″を全面に塗布し、絶縁基板４側面図から紫外線
６で露光し、現像・定着を行なうと第３図（ｄ）に示す
ように、陰極材料１の表面上のホトレジストが除去され
る。次にその表面上にNi,Cu等を無電解メッキ、あるい
は蒸着、スパッター等によってAl等の金属７を形成し
（第３図（ｅ））、ホトレジスト５″を除去すると、第
３図（ｆ）に示すように陰極材料１の上にこれと異なる
金属７が形成されたものが得られる。この後の工程は第
２図（ｅ）〜（ｈ）と同一である。第３図（ｂ）〜
（ｆ）に示した電子放出素子の製造方法は、絶縁層２、
制御電極３を形成する工程時に、絶縁性基板４と絶縁層
２、及び絶縁層２と制御電極３との密着力を強くするた
めホトレジスト５′の耐熱温度以上に加熱処理を施こす
場合に適している。Next, a second embodiment of the present invention will be described. 3 (b) to 3 (f) are cross-sectional views of the device for each step showing the method for manufacturing the electron-emitting device. FIGS. 3 (b) to 3 (f) are obtained by changing the steps of (c) and (d) in the manufacturing method shown in FIGS. 2 (a) to (h) and are given the same reference numerals. .
2B is the same as FIG. 2B, and the cathode material 1 is formed in a predetermined shape on the translucent insulating substrate 4.
Next, as shown in FIG. 3 (c), a negative type photoresist 5 ″ is applied on the entire surface and exposed to ultraviolet rays 6 from the side view of the insulating substrate 4, and development / fixing is performed, as shown in FIG. 3 (d). Thus, the photoresist on the surface of the cathode material 1 is removed, and then a metal 7 such as Al is formed on the surface by electroless plating of Ni, Cu or the like, or by vapor deposition, sputtering or the like (see FIG. e)), the photoresist 5 ″ is removed, and as shown in FIG. 3 (f), a different metal 7 is formed on the cathode material 1. The subsequent steps are the same as those in FIGS. 2 (e) to (h). FIG. 3 (b)-
The method for manufacturing the electron-emitting device shown in (f) is based on
Suitable for heat treatment above the heat resistant temperature of the photoresist 5 ′ in order to strengthen the adhesion between the insulating substrate 4 and the insulating layer 2 and between the insulating layer 2 and the control electrode 3 in the process of forming the control electrode 3. ing.
次に、本発明の第３実施例について説明する。Next, a third embodiment of the present invention will be described.
第４図（ａ）〜（ｄ）は電子放出素子の製造方法を示す
各工程ごとの素子の断面図である。4 (a) to 4 (d) are sectional views of the electron-emitting device in each step showing the method for manufacturing the element.
まず、第４図（ａ）に示すように、絶縁性基板４に陰極
材料１を所定の形状に形成した後、陰極材料１の表面に
陰極材料１と異なる金属等８をメッキで形成する（第４
図（ｂ））。その後、Al2O3，SiO2等の絶縁物２を真空
蒸着、スパッター等によって全面に形成し、次いで制御
電極３なる金属をその上に形成する（第４図（ｃ））。
次に、メッキ形成た金属８を絶縁性基板上４からエッチ
ング除去することにより第４図（ｄ）に示す電子放出素
子を製作することができる。尚、第４図（ｃ）におい
て、制御電極３なる金属はメッキ形成する金属８と異に
し、金属８をエッチング除去する際に制御電極３なる金
属が腐食されないように、それぞれの金属を選定してお
けば良い。First, as shown in FIG. 4A, after the cathode material 1 is formed in a predetermined shape on the insulating substrate 4, a metal 8 or the like different from the cathode material 1 is formed on the surface of the cathode material 1 by plating ( Fourth
Figure (b)). After that, an insulator 2 such as Al 2 O 3 or SiO 2 is formed on the entire surface by vacuum vapor deposition, sputtering or the like, and then a metal to be the control electrode 3 is formed thereon (FIG. 4 (c)).
Next, the plated metal 8 is removed by etching from the insulating substrate 4, whereby the electron-emitting device shown in FIG. 4D can be manufactured. In FIG. 4 (c), the metal forming the control electrode 3 is different from the metal 8 to be plated, and each metal is selected so that the metal forming the control electrode 3 is not corroded when the metal 8 is removed by etching. You can leave it.
次に、上記した本発明の電子放出素子を用いた平面ディ
スプレイパネルの一実施例を第４実施例として第５図に
示す。第５図は平板ディスプレイパネルの一部断面の斜
視図である。絶縁性基板４の表面に垂直方向（第５図中
矢印Ｖ）に長いストライプ状の陰極材料１が水平方向
（第５図中矢印Ｈ）に所定のピッチで多数配列され、こ
れに直交するように制御電極３が設けられている。制御
電極３は水平方向に長いストライプ状の形状をしてお
り、電子ビームを取り出すための窓11がその中に設けら
れている。そして制御電極３は垂直方向に所定のピッチ
で互いに電気的に分離されて多数並置されている。なお
制御電極３の下には第１実施例で説明した絶縁層が設け
られるが、図面上は省略している。次に、制御電極３か
ら所定の距離を離して、螢光体からなる発行部９を表面
に形成した透明なガラス等の基板10が設置されている。Next, an embodiment of a flat display panel using the above-mentioned electron-emitting device of the present invention is shown as a fourth embodiment in FIG. FIG. 5 is a perspective view of a partial cross section of the flat display panel. A large number of stripe-shaped cathode materials 1 which are long in the vertical direction (arrow V in FIG. 5) are arranged in the horizontal direction (arrow H in FIG. 5) on the surface of the insulating substrate 4 at a predetermined pitch so that they are orthogonal to this. Is provided with a control electrode 3. The control electrode 3 has a striped shape that is long in the horizontal direction, and a window 11 for taking out an electron beam is provided therein. The control electrodes 3 are arranged in parallel in the vertical direction so as to be electrically separated from each other at a predetermined pitch. The insulating layer described in the first embodiment is provided below the control electrode 3, but it is omitted in the drawing. Next, a substrate 10 made of transparent glass or the like having an emitting portion 9 made of a fluorescent material formed on the surface thereof is installed at a predetermined distance from the control electrode 3.
次に上記構成の平面ディスプレイパネルの動作につき説
明する。まず、標準のテレビ方式の画像を表示しようと
すると、陰極材料１は必要とする水平方向の絵素の数の
本数が並置される。また制御電極３は画像表示に有効な
走査線数の本数だけ並置される。以上の構成において、
陰極材料１と制御電極３のある特定のものに、所定の電
圧を印加して、陰極材料１の表面（コーナー部）に電子
放出に必要な電界がかかるようにして電子ビームをとり
出し、この電子が螢光面９にあたると発行する。すなわ
ちＸ−Ｙマトリックス構成のプラズマディスプレイ、液
晶ディスプレイと基本的に同じ駆動方法を用いれば、電
子線励起による螢光体発行像を得ることができる。Next, the operation of the flat display panel having the above structure will be described. First, when an image of a standard television system is to be displayed, the cathode material 1 is juxtaposed with the required number of horizontal picture elements. Further, the control electrodes 3 are juxtaposed by the number of scanning lines effective for image display. In the above configuration,
A predetermined voltage is applied to a specific one of the cathode material 1 and the control electrode 3 so that an electric field necessary for electron emission is applied to the surface (corner portion) of the cathode material 1 to extract an electron beam. Issued when electrons hit the fluorescent surface 9. That is, if a driving method that is basically the same as that of a plasma display or a liquid crystal display having an XY matrix structure is used, a fluorescent substance-issued image by electron beam excitation can be obtained.
次に、本発明の電子放出素子の第５実施例について説明
する。第６図は第５図に示す平面ディスプレイパネルに
使用する陰極１の他の形状を示す平面図である。第６図
において、陰極１と制御電極３の交点である１絵素分に
あたる陰極部からの電子放出量ならびに各絵素の電子放
出量のバラツキを平均化して均一になるように、電子放
出部を平面的には楔状で、しかもジグザグ状に形成して
いる。Next, a fifth embodiment of the electron emitting device of the present invention will be described. FIG. 6 is a plan view showing another shape of the cathode 1 used in the flat display panel shown in FIG. In FIG. 6, the electron emission portion is so arranged that the electron emission amount from the cathode portion corresponding to one picture element which is the intersection of the cathode 1 and the control electrode 3 and the variation in the electron emission amount of each picture element are averaged to be uniform. Is formed in a wedge shape in plan view and in a zigzag shape.
なお、陰極１と制御電極３はそれぞれ水平、並びに垂直
方法に逆の関係（90°回転）として用いても良い。The cathode 1 and the control electrode 3 may be used in a relationship opposite to the horizontal and vertical methods (rotation by 90 °).
以上のように本発明は、断面の一部が矩形の形状をした
陰極材料と、絶縁層が絶縁基板の同一面上に形成され、
絶縁層は陰極材料の両側もしくは片側に所定の間隔をお
いて配置し、絶縁層の表面には陰極材料から電子を引き
出すための制御電極を設けることにより、陰極材料のエ
ッジ部から電子放出がなされるため、針状の陰極を配置
する必要がなく、製造が極めて容易となる。INDUSTRIAL APPLICABILITY As described above, the present invention has a cathode material having a rectangular cross section and an insulating layer formed on the same surface of an insulating substrate.
The insulating layer is arranged on both sides or one side of the cathode material at a predetermined interval, and a control electrode for extracting electrons from the cathode material is provided on the surface of the insulating material, so that electrons are emitted from the edge portion of the cathode material. Therefore, it is not necessary to dispose a needle-shaped cathode, and the manufacturing becomes extremely easy.
また、本発明は、陰極と制御電極の位置合わせ精度の高
い電子放出素子を極めて容易に歩留まり良く製造するこ
とができ、また、マトリックス電子放出源は、多くの電
子を均一に放出させることができる。Further, according to the present invention, it is possible to extremely easily manufacture an electron-emitting device with high alignment accuracy between the cathode and the control electrode with a good yield, and the matrix electron-emitting source can uniformly emit many electrons. .
第１図（ａ），（ｂ）、及び第２図（ａ）〜（ｈ）は本
発明の第１実施例における電子放出素子のそれぞれ斜視
図、断面図、及び製造工程における構成図、第３図
（ｂ）〜（ｆ）は本発明の第２実施例における電子放出
素子の製造工程における構成図、第４図（ａ）〜（ｄ）
は本発明の第３実施例における電子放出素子の製造工程
における構成図、第５図は本発明の第４実施例における
平板ディスプレイパネルの斜視図、第６図は本発明の第
５実施例におけるマトリックス電子放出源の平面図、第
７図（ａ）〜（ｂ）及び第８図は（ａ）〜（ｆ）はそれ
ぞれ従来の電子放出素子の断面図、及び製作工程におけ
る構成図である。 １……陰極材料、２……絶縁層、３……制御電極、４…
…絶縁性基板、5,5′,5″……ホトレジスト、６……紫
外線、７……金属、８……金属、９……螢光面、10……
ガラス。1 (a) and 1 (b) and FIGS. 2 (a) to 2 (h) are a perspective view, a cross-sectional view, and a configuration diagram in a manufacturing process, respectively, of an electron-emitting device according to a first embodiment of the present invention. 3 (b) to (f) are configuration diagrams in the manufacturing process of the electron-emitting device in the second embodiment of the present invention, and FIGS. 4 (a) to (d).
Is a configuration diagram in the manufacturing process of the electron-emitting device in the third embodiment of the present invention, FIG. 5 is a perspective view of a flat panel display panel in the fourth embodiment of the present invention, and FIG. 6 is a view of the fifth embodiment of the present invention. FIGS. 7A to 7B and FIG. 8A to FIG. 8F are a cross-sectional view of a conventional electron-emitting device and a configuration diagram in a manufacturing process, respectively. 1 ... Cathode material, 2 ... Insulating layer, 3 ... Control electrode, 4 ...
… Insulating substrate, 5,5 ′, 5 ″ …… Photoresist, 6 …… UV, 7 …… Metal, 8 …… Metal, 9 …… Fluorescent surface, 10 ……
Glass.
Claims (7)
と、絶縁層が絶縁基板の同一面上に形成され、前記絶縁
層は前記陰極材料の両側、もしくは片側に所定の間隔を
おいて配置し、前記絶縁層の表面には前記陰極材料から
電子を引き出すための制御電極を具備し、かつ、前記陰
極材料のエッジ部と、これに近接した前記制御電極端と
がほぼ平行に構成されていることを特徴とする電子放出
素子。1. A cathode material having a rectangular cross section and an insulating layer formed on the same surface of an insulating substrate, the insulating layer having a predetermined space on both sides or one side of the cathode material. And a control electrode for extracting electrons from the cathode material is provided on the surface of the insulating layer, and the edge portion of the cathode material and the control electrode end close to the edge portion are arranged substantially parallel to each other. An electron-emitting device characterized by being provided.
ている請求項１記載の電子放出素子。2. The electron-emitting device according to claim 1, wherein at least the cathode material has a wedge shape in plan view.
れ以上の厚みを有する請求項１もしくは２記載の電子放
出素子。3. The electron-emitting device according to claim 1, wherein the insulating layer has a thickness equal to or greater than the thickness of the cathode material.
し、さらに前記陰極材料面上に陰極材料と異なる材料を
所定の厚さで形成し、その後、絶縁材料膜、金属膜を所
定の厚さで前面に形成し、その後、少なくとも陰極材料
面上の材料を前記絶縁基板上から除去してなる電子放出
素子の製造方法。4. A cathode material having a predetermined shape is formed on an insulating substrate, a material different from the cathode material is formed on the surface of the cathode material to a predetermined thickness, and then an insulating material film and a metal film are formed to a predetermined thickness. A method for manufacturing an electron-emitting device, which is formed on the front surface with a thickness of 1. and then at least the material on the cathode material surface is removed from the insulating substrate.
料の全面に、陰極材料と異なる金属を所定の厚さにメッ
キ法により形成した後、絶縁薄膜、金属薄膜を順次所定
の厚さで全面に形成し、その後、少なくとも前記陰極材
料面上の金属を前記絶縁基板上から除去してなる電子放
出素子の製造方法。5. A metal different from the cathode material is formed on the entire surface of a cathode material of a predetermined shape formed on an insulating substrate by a plating method, and then an insulating thin film and a metal thin film are sequentially formed to a predetermined thickness. A method for manufacturing an electron-emitting device, which is formed on the entire surface by using, and then at least the metal on the surface of the cathode material is removed from the insulating substrate.
記載の陰極材料を、所定のピッチで少なくとも平行に並
置し、これらと直交するように所定の幅を有した制御電
極を所定のピッチで平行に複数本具備したことを特徴と
するマトリックス電子放出源。6. A striped pattern having a predetermined width.
A matrix electron emission source characterized by arranging the cathode materials described in parallel at least in parallel at a predetermined pitch, and comprising a plurality of control electrodes having a predetermined width so as to be orthogonal to these in parallel at a predetermined pitch. .
域が、ジグザグ形状をしている請求項６記載のマトリッ
クス電子放出源。7. The matrix electron emission source according to claim 6, wherein at least the cathode material has a zigzag-shaped region for emitting electrons.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33074089A JPH0793097B2 (en) | 1989-12-19 | 1989-12-19 | Electron-emitting device and manufacturing method thereof |
| DE69026353T DE69026353T2 (en) | 1989-12-19 | 1990-12-18 | Field emission device and method of manufacturing the same |
| EP90124623A EP0434001B1 (en) | 1989-12-19 | 1990-12-18 | Electron emission device and method of manufacturing the same |
| US07/629,954 US5243252A (en) | 1989-12-19 | 1990-12-19 | Electron field emission device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33074089A JPH0793097B2 (en) | 1989-12-19 | 1989-12-19 | Electron-emitting device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03190034A JPH03190034A (en) | 1991-08-20 |
| JPH0793097B2 true JPH0793097B2 (en) | 1995-10-09 |
Family
ID=18236031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33074089A Expired - Fee Related JPH0793097B2 (en) | 1989-12-19 | 1989-12-19 | Electron-emitting device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793097B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2562168Y2 (en) * | 1990-11-08 | 1998-02-10 | 双葉電子工業株式会社 | Field emission device |
| JP2752822B2 (en) * | 1991-11-28 | 1998-05-18 | シャープ株式会社 | Field emission type triode element |
| JP2002208346A (en) * | 2000-11-13 | 2002-07-26 | Sony Corp | Manufacturing method of cold cathode field emission device |
| JP2010188493A (en) * | 2009-02-20 | 2010-09-02 | Toppan Printing Co Ltd | Nanocarbon material compound substrate, electron discharge element and manufacturing method for nanocarbon material compound substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2607251B2 (en) * | 1987-08-26 | 1997-05-07 | 松下電工株式会社 | Field emission cathode |
| JP2645708B2 (en) * | 1987-08-26 | 1997-08-25 | キヤノン株式会社 | Electron-emitting device |
-
1989
- 1989-12-19 JP JP33074089A patent/JPH0793097B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03190034A (en) | 1991-08-20 |
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