JPH0793450B2 - Corrugated solar cell - Google Patents
Corrugated solar cellInfo
- Publication number
- JPH0793450B2 JPH0793450B2 JP2247140A JP24714090A JPH0793450B2 JP H0793450 B2 JPH0793450 B2 JP H0793450B2 JP 2247140 A JP2247140 A JP 2247140A JP 24714090 A JP24714090 A JP 24714090A JP H0793450 B2 JPH0793450 B2 JP H0793450B2
- Authority
- JP
- Japan
- Prior art keywords
- corrugated
- substrate
- thickness
- solar cell
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はコルゲート型太陽電気に係り,特に光路長の長
いコルゲート型基板を用いた光電変換効率の高い太陽電
池に関する。Description: TECHNICAL FIELD The present invention relates to corrugated solar electricity, and more particularly to a solar cell using a corrugated substrate having a long optical path length and high photoelectric conversion efficiency.
従来のコルゲート型太陽電池に用いられているコルゲー
ト基板は,例えば,アイ・イー・イー・イー,トランザ
クション オン エレクトロン デバイセス,第37巻,
第2号,(1990年)第344頁から第347頁〔IEEE,TRANSAC
TION ON ELECTRON DEVICES,VOL.37,NO.2,(1990)pp.34
4−347〕に示されているように,コルゲート型基板に入
射する光の光路長が,一部では短くなっているため,光
発生電流が低下するという問題があった。The corrugated substrate used in the conventional corrugated solar cell is, for example, IEE, Transaction on Electron Devices, Vol. 37,
Issue 2, (1990) pp. 344-347 [IEEE, TRANSAC
TION ON ELECTRON DEVICES, VOL.37, NO.2, (1990) pp.34
As described in [4-347], the optical path length of the light incident on the corrugated substrate is partly short, which causes a problem that the photo-generated current decreases.
上述したごとく,従来のコルゲート型太陽電池に用いら
れるコルゲート型基板は,入射する光の光路長の短い部
分があるため光発生電流が低いという問題があった。As described above, the corrugated substrate used in the conventional corrugated solar cell has a problem that the photo-generated current is low because there is a portion where the optical path length of incident light is short.
本発明の目的は,上記従来技術における問題点を解消す
るものであって,入射する光の光路長の長いコルゲート
型基板を用いた光発生電流を増大させる構造のコルゲー
ト型太陽電池を提供することにある。An object of the present invention is to solve the above-mentioned problems in the prior art, and to provide a corrugated solar cell having a structure in which a photo-generated current is increased by using a corrugated substrate having a long optical path length of incident light. It is in.
上記本発明の目的を達成するため,形成するコルゲート
型基板のV溝の深さを,ウエハの厚さに対して,特定の
深さに制限することにより,全ての入射光の光路長を長
くすることができ,光発生電流の増加をはかることがで
きる。In order to achieve the above-mentioned object of the present invention, by limiting the depth of the V-groove of the corrugated substrate to be formed to a specific depth with respect to the thickness of the wafer, the optical path length of all incident light is increased. It is possible to increase the photo-generated current.
本発明は,ウエハの表面および裏面にV溝を形成したコ
ルゲート型太陽電池を構成するコルゲート型基板におい
て,該基板表面にほぼ垂直に入射した光が,該基板裏面
のV溝斜面で反射された後,上記入射光が入射したV溝
斜面から出射することなく,上記基板内を長く通過する
形状のV溝構造を有するコルゲート型基板を用いた光発
生電流を増大させることができるコルゲート型太陽電池
である。According to the present invention, in a corrugated substrate that constitutes a corrugated solar cell in which V-grooves are formed on the front surface and the back surface of a wafer, light that is incident substantially perpendicularly to the surface of the substrate is reflected by the V-groove slope on the back surface of the substrate. After that, a corrugated solar cell using a corrugated substrate having a V-groove structure having a shape that passes through the substrate for a long time without being emitted from the V-groove slope on which the incident light is incident can be increased. Is.
さらに本発明は,ウエハの表面および裏面にV溝を形成
したコルゲート型太陽電池を構成するコルゲート型基板
において,該基板表面にほぼ垂直に入射した光が,該基
板裏面のV溝斜面で反射されることなく,上記基板内を
長く通過する形状のV溝構造を有するコルゲート型基板
を用いた光発生電流の増加をはかることができるコルゲ
ート型太陽電池である。Further, according to the present invention, in a corrugated substrate that constitutes a corrugated solar cell in which V-grooves are formed on the front surface and the back surface of a wafer, light that is incident on the surface of the substrate almost perpendicularly is reflected by the V-groove slope on the back surface of the substrate. A corrugated solar cell capable of increasing the photo-generated current by using a corrugated substrate having a V-groove structure having a shape that passes through the substrate for a long time without being provided.
本発明のコルゲート型太陽電池を構成するコルゲート型
基板の具体的形状は,コルゲート型基板のV溝斜面と入
射光のなす角をα,入射後の光路とV溝斜面の垂線との
なす角をβとした場合に,ウエハの厚さwと基板の厚さ
dとの関係が, w≦d(sinα+tanβcosα+2cos2α/sinα)…(1) または, w≦d(sinα−tanβcosα+2cos2α/sinα)…(2) となる条件を満足するコルゲート型基板を用いたコルゲ
ート型太陽電池である。The specific shape of the corrugated substrate that constitutes the corrugated solar cell of the present invention is as follows: the angle between the V-groove slope of the corrugated substrate and the incident light is α, and the angle between the optical path after incidence and the perpendicular of the V-groove slope. in case of a beta, the relationship between the thickness w and the thickness d of the substrate of the wafer, w ≦ d (sinα + tanβcosα + 2cos 2 α / sinα) ... (1) or, w ≦ d (sinα-tanβcosα + 2cos 2 α / sinα) It is a corrugated solar cell using a corrugated substrate satisfying the condition of (2).
本発明は,コルゲート型基板の少なくとも表面または裏
面の凸部に平坦な部分を有するコルゲート型太陽電池に
おいて,上記コルゲート型基板の凸部の平坦部とV溝斜
面の延長線とからなる三角形の高さを加えた値を,上記
コルゲート型基板を形成するウエハの厚さwとして用い
た場合に,該ウエハの厚さwとコルゲート型基板の厚さ
dとの間に,上記(1)式または(2)式の関係を有す
るコルゲート型基板を用いたことを特徴とするコルゲー
ト型太陽電池である。The present invention relates to a corrugated solar cell having a flat portion on at least a front surface or a back surface of a corrugated substrate. When the value obtained by adding the thickness is used as the thickness w of the wafer for forming the corrugated substrate, the above formula (1) or It is a corrugated solar cell characterized by using a corrugated substrate having the relationship of formula (2).
さらに本発明は,コルゲート型基板の裏面の凹部に平坦
な部分を有するコルゲート型太陽電池において,上記コ
ルゲート型基板の凹部の平坦部とV溝斜面の延長線とか
らなる三角形の高さを引いた値を,上記コルゲート型基
板を形成するウエハの厚さwとして用いた場合に,該ウ
エハの厚さwとコルゲート型基板の厚さdとの間に,上
記(1)式または(2)式の関係を有するコルゲート型
基板を用いたことを特徴とするコルゲート型太陽電池で
ある。Further, in the present invention, in a corrugated solar cell having a flat portion in the concave portion on the back surface of the corrugated substrate, the height of the triangle formed by the flat portion of the concave portion of the corrugated substrate and the extension line of the V groove slope is subtracted. When the value is used as the thickness w of the wafer for forming the corrugated substrate, the above formula (1) or (2) is defined between the thickness w of the wafer and the thickness d of the corrugated substrate. It is a corrugated solar cell characterized by using a corrugated substrate having the above relationship.
本発明のコルゲート型太陽電池を構成するコルゲート型
基板の性能について,図面を用いて説明する。The performance of the corrugated substrate that constitutes the corrugated solar cell of the present invention will be described with reference to the drawings.
従来のコルゲート型太陽電池の基板では,コルゲート型
基板の裏面に反射鏡を形成しても,例えば第6図に示す
ように,入射光2の一部は,コルゲート型基板内を基板
の厚さdの約4倍程度走行しただけで基板外へ出てしま
う。また,この間に基板の裏面反射で2回,表面反射で
も2回の反射ロスを伴うため,コルゲート型基板内での
光発生電流が大幅に減少する。これに対し,本発明のコ
ルゲート型基板では,例えば第1図に示すごとく,基板
表面に入射した入射光2は,いずれも基板の裏面で反射
された後,入射面から基板外に出射することなく基板内
を長距離にわたって走行することになる。これにより,
コルゲート型基板内で発生する電流を大幅に増加させる
ことが可能となる。In the conventional corrugated solar cell substrate, even if a reflecting mirror is formed on the back surface of the corrugated substrate, a part of the incident light 2 will be inside the corrugated substrate as shown in FIG. After traveling about 4 times as large as d, the vehicle goes out of the substrate. Further, during this period, the backside reflection of the substrate causes reflection loss twice, and the surface reflection also causes reflection loss twice, so that the photo-generated current in the corrugated substrate is significantly reduced. On the other hand, in the corrugated substrate of the present invention, for example, as shown in FIG. 1, the incident light 2 incident on the surface of the substrate is reflected by the back surface of the substrate and then emitted from the incident surface to the outside of the substrate. Instead, it travels over a long distance in the substrate. By this,
It is possible to greatly increase the current generated in the corrugated substrate.
次に,上記コルゲート型基板表面の入射光2が,基板の
裏面で反射された後,基板内を長距離にわたって走行さ
せることができるコルゲート型基板の厚さdと,用いる
ウエハの厚さwの関係を,第2図を用いて説明する。図
において,V溝の斜面の長さをd2,斜面と入射光のなす角
をα,入射後の光路とV溝斜面の垂線とのなす角をβ,
コルゲート型基板の表面V溝の底部と裏面V溝の底部の
間の距離をd4とし,入射光2が裏面で1回反射した後
は,再び入射面に戻らないと仮定すると以下の関係が成
り立つ。Next, after the incident light 2 on the surface of the corrugated substrate is reflected by the back surface of the substrate, the thickness d of the corrugated substrate that can travel in the substrate for a long distance and the thickness w of the wafer to be used are The relationship will be described with reference to FIG. In the figure, the length of the slope of the V groove is d 2 , the angle between the slope and the incident light is α, the angle between the optical path after incidence and the perpendicular of the slope of the V groove is β,
Assuming that the distance between the bottom of the front V-groove and the bottom of the back V-groove of the corrugated substrate is d 4 , assuming that the incident light 2 does not return to the incident surface once after being reflected by the rear surface, the following relationship is obtained. It holds.
w=d4+2d2cosα d4=dsinγ/cosβ d4/tanγ=d2sinα これより,基板の厚さdと,ウエハの厚さwの関係を導
くと w≦d(sinα+tanβcosα+2cos2α/sinα)…(1) となる。したがって,ウエハの厚さwを,上記(1)式
の右辺と等しいかそれよりも小さくすることにより,入
射光2がコルゲート型基板内を長距離にわたって走行す
ることになり,光発生電流を増加させることができる。 w = d 4 + 2d 2 cosα d 4 = dsinγ / cosβ d 4 / tanγ = d 2 sinα From this, the thickness d of the substrate, the leads to the relationship between the thickness w of the wafer w ≦ d (sinα + tanβcosα + 2cos 2 α / sinα ) ... (1) Therefore, by making the thickness w of the wafer equal to or smaller than the right side of the above equation (1), the incident light 2 travels in the corrugated substrate over a long distance, increasing the photo-generated current. Can be made.
次に,第3図を用いて,入射光2のコルゲート型基板の
裏面反射による反射ロスを,更に低く抑えるための基板
構造について述べる。ウエハの厚さw,基板の厚さd,V溝
の斜面の長さd2,斜面と入射光のなす角α,入射後の光
路とV溝斜面の垂線とのなす角β,表面V溝の底部と裏
面V溝の底部の間の距離d4を,それぞれ第3図に示すよ
うに定義すると,入射面のどの位置に入射した入射光2
も,入射面直下の基板裏面のV溝斜面で反射されない条
件は下記(2)式で示される。Next, the substrate structure for further suppressing the reflection loss of the incident light 2 due to the back surface reflection of the corrugated substrate will be described with reference to FIG. Wafer thickness w, substrate thickness d, V groove slope length d 2 , angle α between the slope and incident light, angle β between the optical path after incidence and the V groove slope normal, surface V groove If the distance d 4 between the bottom of the V-shaped groove and the bottom of the V-shaped groove on the back surface is defined as shown in FIG.
Also, the condition not reflected by the V-groove slope on the back surface of the substrate immediately below the incident surface is expressed by the following equation (2).
w≦d(sinα−tanβcosα+2cos2α/sinα)…(2) したがって,ウエハを厚さwを,上記(2)式の右辺と
等しいか,またはそれよりも小さくすることにより,裏
面反射によるロスを低く抑えて光発生電流を増加させる
ことができる。w ≦ d (sin α−tan β cos α + 2 cos 2 α / sin α) (2) Therefore, by making the thickness w of the wafer equal to or smaller than the right side of the above equation (2), the loss due to back surface reflection is reduced. It can be kept low to increase the photogenerated current.
以上,説明したコルゲート型基板の特徴は,ウエハの厚
さwに対して,基板の厚さd小さいことである。実際
に,太陽電池に適用した場合には,基板の厚さdがウエ
ハの厚さwの約1/2程度以下となる場合に,光発生電流
増大の効果が顕著になり,出力電圧の向上が見られた。The characteristic of the corrugated substrate described above is that the thickness d of the substrate is smaller than the thickness w of the wafer. In fact, when applied to a solar cell, the effect of increasing the photo-generated current becomes remarkable when the thickness d of the substrate is less than about 1/2 of the thickness w of the wafer, and the output voltage is improved. It was observed.
以下に,本発明の一実施例を挙げ,図面を用いてさらに
詳細に説明する。Hereinafter, one embodiment of the present invention will be described in more detail with reference to the drawings.
(実施例1) 第2図は,本発明のコルゲート型太陽電池のコルゲート
型基板の構成の一例を示す模式図である。コルゲート型
基板に加工するウエハには(100)表面を持つ単結晶Si
を用い,酸化膜をエッチングマスクとして用い,異方性
エッチングを行いV溝を形成させた。この方法で形成し
たV溝の場合,入射光とV溝斜面とのなす角αは約35.3
゜であった。また,単結晶Siの屈折率nは光の波長が0.
9μmで約3.6であった。したがって入射後の光路とV溝
斜面の垂線とのなす角βは, β=sin-1(sin(90゜−α)/n)≒13.1゜ となる。これを前述の(1)式に代入すると基板の厚さ
dとウエハの厚さwの関係は, w≦d(sinα+tanβcosα+2cos2α/sinα)…(1) w≦3.07d となる。そこで,ウエハの厚さwを150μm,基板の厚さ
dを50μmとした。これにより,本発明のコルゲート型
基板に入射した光は,入射光直下の基板裏面のV溝斜面
で反射されたあと,入射面から基板外に出射することな
く基板内を長距離にわたって走行させることができ,光
発生電流を大幅に増加させることができた。(Example 1) FIG. 2 is a schematic view showing an example of the configuration of a corrugated substrate of the corrugated solar cell of the present invention. Single crystal Si with (100) surface is used for wafers processed into corrugated substrates.
And using the oxide film as an etching mask, anisotropic etching was performed to form a V groove. In the case of the V groove formed by this method, the angle α formed between the incident light and the V groove slope is about 35.3.
It was °. In addition, the refractive index n of single crystal Si is such that the wavelength of light is 0.
It was about 3.6 at 9 μm. Therefore, the angle β formed by the optical path after incidence and the vertical line of the V-groove slope is β = sin -1 (sin (90 ° -α) / n) ≈ 13.1 °. This relationship of the above (1) The thickness of the thickness d and the wafer is substituted substrates equation w becomes w ≦ d (sinα + tanβcosα + 2cos 2 α / sinα) ... (1) w ≦ 3.07d. Therefore, the thickness w of the wafer is 150 μm and the thickness d of the substrate is 50 μm. As a result, the light incident on the corrugated substrate of the present invention is reflected on the V-groove slope on the back surface of the substrate immediately below the incident light, and then travels within the substrate for a long distance without being emitted from the incident surface to the outside of the substrate. It was possible to significantly increase the photo-generated current.
(実施例2) 第3図に示すとおり,本実施例においては,入射面のど
の位置に入射した入射光2も,該入射光直下の基板裏面
のV溝斜面では反射されないようにするためのウエハの
厚さwとコルゲート型基板の厚さdとの関係について述
べる。実施例1において求めたα≒35.3゜,β≒13.1゜
を,前述の(2)式に代入すると基板の厚さdとウエの
厚さwの関係は, w≦d(sinα−tanβcosα+2cos2α/sinα)…(2) W≦2.69d となる。そこで,ウエハの厚さを130μm,基板の厚さを5
0μmとした。これにより,本発明のコルゲート型基板
に入射した光は,入射光直下の基板裏面のV溝斜面で反
射されることなく基板内を長距離にわたって走行させる
ことができ,光発生電流を大幅に増加させることができ
た。(Embodiment 2) As shown in FIG. 3, in this embodiment, in order to prevent the incident light 2 incident on any position of the incident surface from being reflected by the V-groove slope on the back surface of the substrate directly below the incident light. The relationship between the thickness w of the wafer and the thickness d of the corrugated substrate will be described. Substituting α≈35.3 ° and β≈13.1 ° obtained in Example 1 into the above equation (2), the relationship between the substrate thickness d and the wafer thickness w is: w ≦ d (sinα−tanβcosα + 2cos 2 α / sin α) (2) W ≦ 2.69d. Therefore, the wafer thickness is 130 μm and the substrate thickness is 5 μm.
It was set to 0 μm. As a result, the light incident on the corrugated substrate of the present invention can be traveled over a long distance in the substrate without being reflected by the V-groove slope on the back surface of the substrate immediately below the incident light, and the photo-generated current is significantly increased. I was able to do it.
(実施例3) 本実施例においては,コルゲート型基板の凸部および凹
部の一部が平坦になっている場合について説明する。(Embodiment 3) In this embodiment, description will be made on a case where the corrugated substrate has some of the convex portions and the concave portions that are flat.
第4図は,コルゲート型基板の表面および裏面の凸部
に,それぞれ高さd5,d6だけ削れた形の平坦部が存在す
る。この場合には,コルゲート型基板に加工するウエハ
の厚さwを,第4図に示すようにd5,d6を加えた厚みに
置き換えることにより,本発明のコルゲート型基板が得
られる。In Fig. 4, the corrugated substrate has a flat portion that is cut off by heights d 5 and d 6 on the convex portions on the front and back surfaces, respectively. In this case, the corrugated substrate of the present invention can be obtained by replacing the thickness w of the wafer processed into the corrugated substrate with a thickness obtained by adding d 5 and d 6 as shown in FIG.
第5図はコルゲート型基板の裏面凹部に高さd7だけ浅く
なった平坦部が存在する。この場合には,コルゲート型
基板に加工するウエハの厚さwを,第5図に示すように
d7だけ薄くした厚みに置き換えることにより,本発明の
コルゲート型基板を得ることができる。In FIG. 5, there is a flat portion shallowed by a height d 7 in the concave portion on the back surface of the corrugated substrate. In this case, the thickness w of the wafer to be processed into the corrugated substrate is set as shown in FIG.
by replacing the thinned thickness by d 7, it is possible to obtain a corrugated-type substrate of the present invention.
以上の実施例においては,単結晶Siウエハを用いた場合
について述べたが,この他GaAa,Inp,Ge等の材料や,そ
の他の化合物半導体材料を用いた単結晶ウエハであって
もよい。また,等方性エッチングや機械加工,レーザ加
工等によってコルゲート型基板を形成する場合には,単
結晶のみならず多結晶,非結晶材料であってもよい。In the above embodiments, the case of using a single crystal Si wafer is described, but a single crystal wafer using a material such as GaAa, Inp, Ge or the like or another compound semiconductor material may be used. Further, when the corrugated substrate is formed by isotropic etching, mechanical processing, laser processing or the like, not only single crystal but also polycrystalline or amorphous material may be used.
以上詳細に説明したごとく,本発明のコルゲート型基板
を用いた薄型の太陽電池は,コルゲート型基板に入射す
る光を,該基板内により長い距離閉じこめておくことが
できるので,コルゲート型基板内で発生する光電流をい
っそう増加させることができ,光電変換効率の高いコル
ゲート型太陽電池が得られる。As described in detail above, in the thin solar cell using the corrugated substrate of the present invention, the light incident on the corrugated substrate can be confined in the substrate for a longer distance. The generated photocurrent can be further increased, and a corrugated solar cell with high photoelectric conversion efficiency can be obtained.
第1図は本発明のコルゲート型太陽電池のコルゲート型
基板の構造の一例を示す模式図,第2図は本発明の実施
例1で例示したコルゲート型基板の構造を示す模式図,
第3図は本発明の実施例2で例示したコルゲート型基板
の構造を示す模式図,第4図および第5図は本発明の実
施例3で例示したコルゲート型基板の構造を示す模式
図,第6図は従来のコルゲート型基板の構造を示す模式
図である。 1……コルゲート型基板、2……入射光FIG. 1 is a schematic diagram showing an example of the structure of a corrugated substrate of a corrugated solar cell of the present invention, and FIG. 2 is a schematic diagram showing the structure of a corrugated substrate exemplified in Example 1 of the present invention.
FIG. 3 is a schematic diagram showing the structure of the corrugated substrate exemplified in Embodiment 2 of the present invention, and FIGS. 4 and 5 are schematic diagrams showing the structure of the corrugated substrate exemplified in Embodiment 3 of the present invention. FIG. 6 is a schematic diagram showing the structure of a conventional corrugated substrate. 1 ... Corrugated substrate, 2 ... Incident light
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−49679(JP,A) 特開 昭59−127878(JP,A) 特開 平2−220479(JP,A) 特開 昭62−237768(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-60-49679 (JP, A) JP-A-59-127878 (JP, A) JP-A-2-220479 (JP, A) JP-A 62- 237768 (JP, A)
Claims (3)
コルゲート型基板を用いたコルゲート型太陽電池におい
て、上記コルゲート型基板はその表面のV溝斜面と入射
光のなす角をα、入射後の光路と上記表面のV溝斜面の
垂線とのなす角をβとした場合に、上記ウエハの厚さw
と上記コルゲート側基板の厚さdとの関係が w≦d(sinα−tanβcosα+2cos2α/sinα) となる条件を満足し、上記コルゲート型基板の表面にほ
ぼ垂直に入射した光が、上記コルゲート型基板の裏面の
上記入射光の延長線上に存在するV溝斜面で反射される
ことなく上記コルゲート型基板内を長く通過することを
特徴とするコルゲート型太陽電池。1. A corrugated solar cell using a corrugated substrate in which V-grooves are formed on the front and back surfaces of a wafer, wherein the corrugated substrate has an angle α between a slope of the V-groove on the surface and incident light, which is after incidence. When the angle between the optical path of V and the perpendicular of the slope of the V groove on the surface is β, the thickness w of the wafer is
And the relationship between the thickness d of the corrugated side substrate satisfies w ≦ d (sinα-tanβcosα + 2cos 2 α / sinα) become conditions, light substantially vertically incident on the surface of the corrugated board, the corrugated A corrugated solar cell, wherein the corrugated solar cell passes through the corrugated substrate for a long time without being reflected by a V-groove slope existing on the extension line of the incident light on the back surface of the substrate.
裏面の凸部に平坦な部分を有するコルゲート型太陽電池
において、上記コルゲート型基板の凸部の平坦部とV溝
斜面の延長線とからなる三角形の高さを加えた値を、上
記コルゲート型基板を形成するウエハの厚さwとして用
いた場合に、該ウエハの厚さwとコルゲート側基板の厚
さdとの間に、請求項1記載の関係を有するコルゲート
型基板を用いたことを特徴とするコルゲート型太陽電
池。2. A corrugated solar cell having a flat portion on at least a front surface or a back surface of a corrugated substrate, wherein the corrugated substrate has a triangular shape composed of a flat portion of the projected portion of the corrugated substrate and an extension line of a V-groove slope. The value obtained by adding the height is used as the thickness w of the wafer for forming the corrugated substrate, and the value between the thickness w of the wafer and the thickness d of the corrugated side substrate is set forth in claim 1. A corrugated solar cell using a corrugated substrate having a relationship.
分を有するコルゲート型太陽電池において、上記コルゲ
ート型基板の凹部の平坦部とV溝斜面の延長線とからな
る三角形の高さを引いた値を、上記コルゲート型基板を
形成するウエハの厚さwとして用いた場合に、該ウエハ
の厚さwとコルゲート型基板の厚さdとの間に、請求項
1記載の関係を有するコルゲート型基板を用いたことを
特徴とするコルゲート型太陽電池。3. In a corrugated solar cell having a flat portion in the recess on the back surface of the corrugated substrate, the height of a triangle formed by the flat portion of the recess of the corrugated substrate and the extension line of the V groove slope is drawn. When the value is used as the thickness w of the wafer for forming the corrugated substrate, the corrugated type having the relationship according to claim 1 between the thickness w of the wafer and the thickness d of the corrugated substrate. A corrugated solar cell characterized by using a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2247140A JPH0793450B2 (en) | 1990-09-19 | 1990-09-19 | Corrugated solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2247140A JPH0793450B2 (en) | 1990-09-19 | 1990-09-19 | Corrugated solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04127579A JPH04127579A (en) | 1992-04-28 |
| JPH0793450B2 true JPH0793450B2 (en) | 1995-10-09 |
Family
ID=17159029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2247140A Expired - Fee Related JPH0793450B2 (en) | 1990-09-19 | 1990-09-19 | Corrugated solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793450B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59127878A (en) * | 1983-01-12 | 1984-07-23 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric conversion device |
| JPH0680837B2 (en) * | 1983-08-29 | 1994-10-12 | 通商産業省工業技術院長 | Photoelectric conversion element with extended optical path |
| JPS62237768A (en) * | 1986-04-08 | 1987-10-17 | Oki Electric Ind Co Ltd | Manufacture of compound semiconductor sorar battery |
| JPH0766978B2 (en) * | 1989-02-22 | 1995-07-19 | 株式会社日立製作所 | Photoelectric conversion element and manufacturing method |
-
1990
- 1990-09-19 JP JP2247140A patent/JPH0793450B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04127579A (en) | 1992-04-28 |
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