JPH0793706B2 - Imaging device and electronic still camera - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image pickup apparatus using a solid-state image pickup device, and an electronic still camera that photographs and records a still surface using the image pickup apparatus.

2. Description of the Related Art Generally, there are roughly two conventional scanning methods for each horizontal pixel column of a solid-state image sensor, as shown in FIGS. 3 (A) and 3 (B).

As shown in FIG. 3 (A), the first scanning method scans the signal charges accumulated in each pixel in the first field by scanning the horizontal pixel columns in which the pixels 40 are lined up every other column in the vertical direction ( 3), the remaining horizontal pixel rows that were not previously scanned in the second field are scanned (scan shown by the broken line in FIG. 3A), and two fields are scanned. This is a method of reading all signal charges in (= 1 frame). As shown in FIG. 3B, the second scanning method is a method of scanning two adjacent horizontal pixel columns in one horizontal scanning to read out all signal charges in one field.

The advantages and disadvantages of using the above two scanning methods for a television camera are as follows.

The first scanning method has a drawback that the afterimage is large, but on the other hand, an image with good vertical resolution can be obtained.

The second scanning method has a merit that afterimage is reduced although vertical resolution is deteriorated.

Therefore, it is possible in principle to switch and use these two scanning methods depending on the situation. A conventional example of this concrete structure is shown in FIG. In FIG. 1, a subject image is guided to a solid-state image sensor 2 by a lens 1. On the other hand, in the drive pulse generation circuit 9, a common pulse group is generated regardless of the two types of drive pulse groups and the scanning methods that change according to the above-described two scanning methods, and each group corresponds to the first scanning method. The first drive pulse group is applied to the terminal A of the first changeover switch 8 and the second drive pulse corresponding to the second scan method.
Drive pulse group is guided to the terminal B of the first changeover switch 8. Then, one of these two types of drive pulse groups is selected by a command from the scanning method changeover switch 7 and is introduced to the drive circuit 4 together with the common pulse group. Then, the drive circuit 4 converts the voltage of each pulse into a voltage suitable for each by the voltage group supplied from the drive voltage generation circuit 41, and applies it to the solid-state image sensor 2 together with various DC voltage groups. Then, an electric signal corresponding to the subject is read from the solid-state image sensor 2, processed by the signal processing circuit 3, and output from the output terminal 42. Considering this output signal, the first changeover switch 8
When the terminal A is selected, the solid-state image sensor 2
Since the image is scanned by the first scanning method described above, a signal having a large afterimage but good vertical resolution is output, and when the terminal B is selected, the solid-state imaging device 2 uses the second scanning method described above. Since the scanning is performed with, a signal having a low vertical resolution but a small afterimage is output.

In the conventional example described above, the type of the drive pulse applied to the solid-state image sensor 2 is partially changed depending on the scanning method, but the peak value is generally not changed. .

Next, considering the case where the above-mentioned two scanning methods are applied to an electronic still camera, the first method has an advantage that a frame image can be obtained, and is suitable for shooting and recording an image having a good vertical resolution. The second method has a drawback that only a field image can be obtained and the vertical resolution is deteriorated. However, in general, the image has a strong vertical correlation, and even if the vertical resolution is reduced to half, the overall image quality is about that of a frame image. There is no big difference, and it has an advantage that the number of images that can be recorded on one recording medium is doubled as compared with frame images.

Therefore, in the electronic still camera,
It has been conventionally considered to switch and use the first and second scanning methods. (For example, JP-A-59-149478) This example is shown in FIG. In FIG. 5, 10 is a lens,
11 is a diaphragm, 12 is a shutter, 13 is a solid-state image sensor, 14 is a signal processing circuit, 15 is a photometric element, 16 is an exposure control circuit, 50 is a solid-state image sensor scanning method changeover switch, 51 is an element drive circuit,
23 is a recording method selector switch, 24 is a recording head selector switch, 25 is a recording head selector signal input terminal, 26 is a recording device,
27 is a first recording head, 28 is a second recording head, 29 is a first recording area, 30 is a second recording area, and 22 is a recording mode changeover switch. Next, the operation of FIG. 5 will be described. The brightness of the subject is measured by the photometric element 15, the appropriate exposure amount is determined by the exposure control circuit 16 based on the information from the photometric element 15, and the aperture value of the diaphragm 11 and the shutter 12 at the time of shooting the subject based on this value. Solid-state image sensor for shutter speed
Control to a value that gives an appropriate exposure amount to 13. Then, the solid-state imaging device 13 scans the drive signal generated by the device drive circuit 51 with the drive signal switched by the scanning method changeover switch 50, and the signal charge is read out and guided to the signal processing circuit 14. The signal processed by the signal processing circuit 14 in a signal form suitable for recording on the recording device 26 is guided to the recording method changeover switch 23. On the other hand, the recording mode selector switch 22
When either the frame recording mode or the field recording mode is selected and the frame recording mode is selected based on this information, the scanning method changeover switch 50 is directed to the terminal A and the recording method changeover switch 23 is operated to the terminal. It is switched to A direction. Further, when the recording mode changeover switch 22 selects the field recording mode, the scanning method changeover switch 50 is changed over to the terminal B and the recording method changeover switch 23 is changed over to the terminal B. A driving signal for performing the first scanning method described above is led to the terminal A of the scanning method changeover switch 50, and a driving signal for performing the second scanning method described above is led to the terminal B. I shall. Therefore, when the frame recording mode is selected, the solid-state imaging device 13 is scanned by the first scanning method, the signal from the signal processing circuit 14 is guided to the terminal A of the recording method changeover switch 23, and the signal is sent to the head. The changeover switch 24 guides the signal of the first field to the first recording head 27 in the first field and the second recording head 28 in the second field. The signal of the second field is recorded in the second recording area 30. When the field recording mode is selected, the solid-state imaging device 13 is scanned by the second scanning method, the signal from the signal processing circuit 14 is guided to the terminal B of the recording method changeover switch 23, and the first recording head. It is recorded in the first recording area 29 by 27. A field switching pulse is supplied to the terminal 25.

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, in the image pickup apparatus, the television camera, and the electronic still camera of the conventional configuration that switches the scanning method of the solid-state image pickup device as described above, the amount of charge that can be handled by the solid-state image pickup device, that is, the saturation signal level However, it had the following problems. The problem will be described with reference to FIG.

FIG. 6 shows a photodiode array 61, a vertical transfer CCD (VCCD) 63 that is driven in four phases by pulses of φV _{1 to} φV ₄ , and an interline transfer CCD (IT-CCD) that mainly includes a transfer gate region 62. ) Is a conceptual diagram of FIG.
The flow of signal charges in the first scanning pope described above,
(B) shows the flow of signal charges in the above-described second scanning method. In the same figure (A), in the vertical blanking period of the first field, as shown in (A)-(a) of FIG. Only the signal charge is transferred to the V-CCD, and is read out as the signal charge through the V-CCD 63, the horizontal transfer CCD (not shown) and the output amplifier during the effective period. Further, as shown in (A)-(b) of the figure, during the vertical blanking period of the second field, the photodiode 61-b corresponding to the second field which was not read in the first field. Signal charges are transferred to the V-CCD and are read out in the same manner as the signals in the first field. Next, in the same figure (B), after the signal charges of all the photodiodes are transferred to the V-CCD 63 (the same figure (A)-(a)) in the vertical blanking period of each field, the same figure ( As shown in A)-(b) and (c), the charges of two adjacent horizontal photodiodes are mixed,
During the effective period, the signal charges for one field period are read out through the V-CCD 63, the horizontal CCD, and the output amplifier.

Now, the maximum charge that can be stored in one photodiode is M _p , the area is A _p , and the maximum charge that can be transferred by V-CCD is Mc, V
-If the area of one stage of CCD is Ac, M _p and M _c are A _p and A _c , respectively.
A _p + A _c = constant (same size,
In the case of an image sensor with the same number of pixels), k _p · M _p
+ K _c · M _c = constant, that is, M _p + kM _c = C = constant (1) (k _p , k _c , k = k _c / k _p : proportional constant).

On the other hand, considering the charge amount S _c handled by the V-CCD unit in the second scanning method, the relation with the charge amount S _p accumulated in one photodiode in the first scanning method is S _c. =
S _p , and in the second scanning method, S _c = 2S _p . Thus, each possible handling maximum charge amount M _p, the relationship of M _c is in the in the first scanning scheme _{M c = M p ............ (2} ) the second scan method M _c = 2M _p ......... If (3) is satisfied, the amount of signal charges that can be taken out from this image sensor is totally maximized due to the limitation of the equation (1). However, the same image pickup device cannot satisfy the above formulas (2) and (3) at the same time. For example, if the image pickup device is designed such that M _c = M _p , this image pickup device is Saturation signal level Sig _max1 when scanning by the scanning method of is obtained by substituting M _c = M _p in the equation (1), Becomes This value is the maximum value in the first scanning method for similar elements (same design standard, same size, same number of elements).
Similarly, the saturation signal level S'ig _max2 when this element is scanned by the second scanning method is determined by M _{c of} this element, Becomes This value is not the maximum value in the second scanning method for the similar element, as will be described later. This maximum value is M _c =
It is obtained when the element is designed to be 2M _p, and its value Sig _max2 is obtained by substituting M _c = 2M _p into the equation (1), Becomes However, the saturation signal level S'ig _{max2 when} this element is scanned by the first scanning method is determined by M _p of this element. Becomes

In other words, when the scanning method is switched in the image pickup device designed by giving priority to the first scanning method, a satisfactory saturation signal level can be obtained in the first scanning method, but an ideal value is obtained in the second scanning method. You get a lower saturation signal level, the difference is Is.

On the other hand, in the image sensor designed by giving priority to the second scanning method, a satisfactory saturation signal level can be obtained in the second scanning method, but in the first scanning method, only a saturation signal level lower than the ideal is obtained. Not (the difference is Is. ), Which is a major problem in an image pickup apparatus using a solid-state image pickup element in which the number of pixels increases to improve the resolution and the saturation signal level tends to decrease.

In view of the above points, the present invention provides an imaging device and an electronic still camera that can increase the level of a saturation signal.

Means for Solving the Problems In order to solve the above problems, the present invention is directed to a method of scanning a horizontal pixel row of a solid-state imaging device, in which signals of two adjacent horizontal pixel rows are simultaneously read in one horizontal scan to form one field. A first scanning method for scanning the entire screen in a period and a second scanning method for scanning the entire screen in a two-field period by reading a signal of one horizontal pixel column by interlaced scanning in one horizontal scanning The first switching means for switching and the second switching means for interlocking with the first switching means for switching between the drive pulse peak value or both the DC drive voltage and the drive pulse peak value applied to the solid-state imaging device. It is composed.

Effect of the Invention With the above-described configuration, according to the present invention, in conjunction with switching of the scanning state of the solid-state image sensor, not only the waveform (not including voltage) of the drive pulse applied to this solid-state image sensor, but also the applied DC potential and drive pulse are applied. The saturation signal level of the solid-state image sensor can be increased by switching the peak value or one of the peak values.

Embodiments Before describing the embodiments, the principle of the present invention will be described by taking a vertical overflow structure CCD image pickup device (VOD-CCD) which is often used as a solid-state image pickup device as an example. FIG. 7 is a basic configuration diagram of the VOD-CCD, in which a plurality of photodiodes (PD) 71, transfer gate regions (TG) 72, and φV _{1 to} φV ₄ four-phase drive pulses arranged in the horizontal and vertical directions are provided. Vertical transfer CCD (V-CCD) 73 driven by, horizontal CCD
It is composed of a shift register (H-CCD) 74 and an output amplifier 75. FIG. 8 (a) is a diagram showing a cross section of a unit pixel, which is composed of a PD71, a half-stage V-CCD81, and a TG region in which a threshold voltage is controlled, and the V-CCD and the TG have a common transfer electrode. It has a structure without a transfer gate electrode driven by. Further, the device is formed in the P well 82, the PD 71 has a low impurity concentration, and the P well (1P
In W), peripheral circuits such as the V-CCD 81 other than the PD 71, the channel stop region 83, and an output amplifier (not shown) are formed in the P well (2PW) having a relatively high concentration and a deep junction. And this 1PW has become a impurity concentration distribution such as depleted do completely by the reverse bias voltage V _SUB 85 applied to P between wells and the n-type substrate (n-SUB) 84, PD n ⁺ region Blooming is suppressed by a vertical punch-through transistor composed of 86, 1 PW (P region) and n-type substrate 84.

The operation of this image pickup device will be described. First, the V-CCD of this VOD-CCD is driven by a 4-phase double clocking pulse as shown in FIG. 9, and the clock pulses φV ₂ and φV ₄ are TG and V-CCD. It has three levels of V _L , V _M , and V _H for driving, and φV ₁ and φV ₃ are binary pulses of V _L and V _M for driving the V-CCD. The signal charge accumulated in each PD 71 according to the incident light 86 is TG when the vertical transfer pulse φV ₂ (or φV ₄ ) becomes the high level V _H during the vertical blanking (V-BLK) period.
It is read out to the corresponding V-CCD via the area 72. This signal charge is transferred in parallel to the H-CCD 74 in a cycle of one horizontal period and taken out from the output amplifier 75 as a video signal. The state of charge in PD71, TG72, V-CCD81 will be described in more detail.

FIG. 10 shows the potential distribution when a substrate bias is applied so that 1PW just under PD is completely depleted.
When the vertical clock pulse becomes the high level _VH , the signal charge is read from the PD to the V-CCD. (Charge flow of arrow 101 in Fig. 10) At the same time, the PD potential is the channel potential of the TG region.
It is set by _TGH (φV = _VH ) (state of curve EMPTY).
When the signal reading is completed and the vertical clock pulse voltage becomes V _M , the PD becomes in a floating state and the next charge accumulation is started.
Then, the potential of PD decreases as the signal charge increases, and the barrier voltage between the n ⁺ region forming PD and 1PW decreases. Eventually, punch-through current between the n ⁺ region and the substrate starts to flow (charge flow of arrow 102 in the figure), and all excess charges generated more than that flow into the substrate (curve Full).
State). That is, the minimum potential _{PD of 1} PW controlled by V _sub is the channel _TGM of the TG region during charge transfer.
If the V _sub voltage is set to be higher than (φ _v = V _M ), all excess charges are swept out to the n-type substrate without overflowing to V-CCD, and blooming is completely suppressed.

By the above operation, the charge amount M _p that can be accumulated in PD is given by the following equation.

_{M p = C PD (TGH -} PD ............ (8) However, for C _PD is defined PD capacity and blooming suppression than the description of the above operation, _{TGM <PD} ............ (9) that is _PD = _TGM + Δ ............ (10) (However, Δ> O). Substituting this into Eq. (8) gives the following equation.

M _p = C _PD ( _TGH − _TGM −Δ) (11) On the other hand, the maximum transferable charge amount M _C of V-CCD is determined by the difference between the V _M voltage and the V _L voltage of the vertical clock pulse. Therefore, it is expressed by the following equation.

M _C = K _C (V _M −V _L ) ... (12) where K _C is a proportional constant K _C > O In addition, Eqs. (10) and (11) are expressed as V _H , V _M , and V _sub When expressed in terms of voltage values, _PD is proportional to V _sub , _TGM is to V _M , and _TGH is proportional to V _H , so that equations (13) and (14) are obtained, respectively.

_{V sub = a 1 V M +} a 2 ............ (13) M P = K P (V H -V M) -a 3 ............ (14) On the other hand, generally the semiconductor device has applicable voltage range, the CCD image sensor is no exception, V _H voltage and V
_{The L} voltage value is set to a maximum value and a minimum value within this range, respectively, and fixed, which is the condition for increasing M _P and M _C. The condition (12), are substituted into _{(14), M C = K C V M} -K L ............ (15) M P = K H -K P V M ............ (16) Becomes Therefore, M _C and M _P can be changed by the V _M value, but the relationship with M _C and M _P is in a trade-off relationship. In other words, to increase M _C , the V _M voltage value should be increased, but M _P
Becomes smaller, and conversely, if the V _M voltage value is lowered, M _P becomes larger, but M _C becomes smaller. Note that blooming must be suppressed by changing V _sub according to the change in V _M (1
It is clear from equation (3).

Of the two common scanning method of the image pickup element, M _C = M _P when the first scan method, when the second scan method M _C =
The condition of 2M _{P is} the condition that maximizes the saturation signal level while maintaining the condition of equation (1). Therefore, if V _M is changed so that this condition is almost satisfied, the same image sensor scans. Regardless of the method, a saturation signal level close to ideal can always be obtained. Then, blooming can be suppressed by changing V _sub in accordance with the change in V _M. M _C =
The value of V _M for satisfying the condition of M _P , M _C = 2M _P is expressed by equation (15),
When calculated from Eq. (16), it becomes as follows.

In case of scanning method 1, M _C = M _P V _sub1 = a ₁ · V _M1 + a ₂ (20) When scanning method 2 From M _C = 2M _P V _sub2 = a ₁ · V _M2 + a ₂ (22) When comparing V _M1 and V _M2 , Substituting equations (17) and (18) into the numerator of equation (23) yields (2
3) Numerator of formula = K _C (K _P V _H −a ₃ ) −K _P・ K _C・ V _L ＝ K _C・ K _P (V
_H - _VL ) -K _C · a ₃ ………… (24), V _H > V _L , a ₃ is a small value, and considering the condition of K _C > O, K _P > O, (24) The value of the equation is greater than zero, so V _M2 > V _M1 . That may be a low V _M value when the first scan method than V _M value when the second scan method, V _sub voltage so that may be changed accordingly. Note that if the value of V _sub in the second scanning method is set to be larger than a ₁ · V _M1 , _PD >
_Since it becomes _TGM and blooming can be suppressed, at this time, it is not necessary to change the voltage value of V _sub in accordance with the change of the scanning method, that is, V _M.

Incidentally, although the description will be changed, the switching between the first and second scanning methods is performed by changing the waveform of the clock pulse of φV _{1 to} φV ₄ during the V-BLK period as shown in FIG. That is, in the first scanning method, one V-BL
In the K period, either φV ₂ or φV ₄ becomes the V _H level, and the corresponding PD charges are read out to the V-CCD. Second
In the scanning method described above, in one V-BLK period, φV ₂ and φV
₄ Both become _VH level, and the charges of all PDs are read to V-CCD.

Next, an embodiment that achieves the principle of the present invention described above will be described.

FIG. 1 shows a first embodiment of the present invention, and the same parts as those in FIG. 4 are designated by the same reference numerals. In FIG. 1, a subject image is guided to a solid-state image sensor 2 by a lens 1. On the other hand, in the drive pulse generation circuit 9, a common pulse group is generated regardless of the two types of drive pulse groups and the scanning method that change according to the above-described two scanning methods, and the pulse group (corresponding to the first scanning method ( For example, when the solid-state image pickup device is the VOD-CCD described in the section of the principle of the present invention, the vertical transfer pulse φV _{1 to} φV ₄ ) shown in FIG.
To the terminal A of the second drive pulse group corresponding to the second scanning method (for example, the vertical transfer pulse φV ₁ shown in FIG. 11B).
~φV ₄₎ is guided to the terminal B of the first changeover switch 8. Then, one of these two types of drive pulse groups is selected by a command from the scanning method changeover switch 7 and is introduced to the drive circuit 4 together with a common pulse group (for example, H-CCD drive pulse). In the drive circuit 4, a voltage group that does not change regardless of the scanning state (for example, V _H , V _Δ and H-CCD driving voltage) is directly changed from the drive voltage generation circuit 6 and that changes according to the scanning state. (For example, the solid-state image sensor is described in the section of the principle of the present invention.
In the case of VOD-CCD, the V _M voltage and the V _sub voltage) are selected by the second changeover switch 5 and applied.
Then, the above-mentioned drive pulse group is applied to the solid-state imaging device together with various DC voltage groups as a drive pulse group whose voltage is converted by these voltage groups. The terminal A of the second changeover switch 5 has a DC potential (for example V _M1 , V _sub1 ) suitable for the first scanning method, and the terminal B has a DC potential suitable for the second scanning method (for example V _M1 and V _sub1 ). _M2 , V _sub2 ) is applied, and the second changeover switch 5 is changed over by the command of the scanning state changeover switch 7 in conjunction with the first changeover switch 8. That is, when the first scanning method is instructed, the terminal A is selected for both the first changeover switch 8 and the second changeover switch 5, and the terminal B is selected when the second scanning method is instructed. In this way, the video signal output from the solid-state image sensor 2 is a signal having a large afterimage but good vertical resolution when scanned by the first scanning method, and is scanned by the second scanning method. While the vertical resolution is low, the signal has a small afterimage, which is the same as in the conventional example. Furthermore, the saturation signal level is such that the driving voltage is set to an optimum value for each scanning method. As a result, each scanning method is increased to an almost ideal value, and the dynamic range is expanded as compared with the conventional example. The ideal saturation signal level here is a solid-state image sensor that is optimal for each scanning method (that is, an element with an optimal allocation of PD and V-CCD areas, etc.) under the same size and number of pixels. It is the saturation signal level obtained.

Next, FIG. 2 shows a second embodiment of the present invention, which is an example in which the present invention is applied to the conventional electronic still camera of FIG. 5 to increase its saturation signal level and to expand the dynamic range. is there. In the figure, the same parts as those in FIG. 5 are shown by the same reference numerals, and the common parts with FIG. 1 are shown by the same reference numerals, and all the constituent blocks operate in common with those in FIG. 1 and FIG. Since all are explained, they are omitted here.

Further, according to the present invention, it has been described that the saturation signal level can be increased to almost the optimum value by the above two scanning methods, but the gist of the present invention is not limited to the above two scanning methods. The solid-state image pickup device for the ED-TV system is changed to the double-speed progressive scanning method for the ED-TV system (that is, V-CCD
The amount of charge handled by one stage is the same as that of one photodiode) and the interlaced scanning of PD mix method for the conventional TV system (that is, the amount of charge handled by one stage of V-CCD is two photodiodes). It is obvious that it is particularly useful when the amount of charge to be handled by the V-CCD 1 stage (corresponding number of photodiodes) is different by switching the scanning method, as in the case of switching to (when it becomes electric charge). Is.

EFFECTS OF THE INVENTION As described above, in the image pickup apparatus according to the present invention, and the electronic still camera in which the scanning method is switched according to the switching between the frame recording mode and the field recording mode, the driving pulse applied to the solid-state imaging device according to each scanning method By switching not only the waveform but also the peak value or the peak value and the DC potential, the saturation signal level can be increased and the dynamic range can be expanded, and the practical effect is great.

[Brief description of drawings]

FIG. 1 is a block diagram showing the first embodiment of the present invention, and FIG.
FIG. 4 is a block diagram showing another embodiment of the present invention, FIG. 3 is an explanatory diagram showing a scanning method of a solid-state image pickup device, FIG. 4 is a block diagram of a conventional image pickup device, and FIG. 5 is a conventional electronic still camera. FIG. 6 is a state diagram showing a method of reading charges by two scanning methods in the IT-CCD solid-state imaging device, FIG.
The figure shows the basic configuration of the vertical overflow structure image pickup device (VOD-CCD), and Fig. 8 is a sectional view of the unit pixel of the VOD-CCD device.
FIG. 9 is a waveform diagram of the vertical clock pulse φV applied to the V-CCD of the VOD-CCD element, and FIG. 10 is the VOD-C shown in FIG.
A schematic diagram showing the potential distribution of the unit pixel of the CD element, FIG.
It is a wave form diagram of the vertical blanking period of the (phi) V pulse applied to VOD-CCD by one scanning method. 1, 10 ... Lens, 2, 13 ... Solid-state image sensor, 3, 14 ... Signal processing circuit, 4 ... Image sensor drive circuit, 5 ... Second changeover switch, 6 ... Drive voltage generation circuit, 7 ... Scanning state changeover switch, 8 ... Second changeover switch,
9 ... Drive pulse generation circuit, 11 ... Aperture, 12 ... Shutter, 22 ... Recording mode selector switch, 26 ... Recording device.

Claims (3)

[Claims] 1. A method for scanning a horizontal pixel row of a solid-state image sensor,
The first scanning method in which the signals of two adjacent horizontal pixel columns are simultaneously read in one horizontal scan and the entire screen is scanned in one field period, and the signal of one horizontal pixel column is interlaced in one horizontal scan. The first scanning method is switched to the second scanning method of reading by race scanning and scanning the entire screen in two field periods.
And a second switching means for interlocking with the first switching means for switching between the drive pulse crest value applied to the solid-state imaging device or both the DC drive voltage and the drive pulse crest value. A characteristic imaging device. 2. The image pickup according to claim 1, wherein the second switching means switches the transfer pulse voltage value of the vertical shift register of the solid-state image pickup device or the transfer pulse voltage value and the blooming suppression control voltage value. apparatus. 3. A first scanning state in which signals of two adjacent horizontal pixel columns are simultaneously read in one horizontal scanning to scan the entire screen in one field period, and a first scanning state In the second scanning state, the signals of the odd or even horizontal pixel columns are sequentially scanned one by one in the field, the signals of the remaining pixel columns are sequentially scanned in the second field one by one, and the entire screen is scanned in one frame period. First switching means for switching, and second switching means for switching the drive pulse voltage value applied to the solid-state imaging device in cooperation with the first switching means.
And a third switching unit for switching the recording mode between field image recording and frame image recording in cooperation with the first switching unit.