JPH0795085B2 - Power cable connection inspection method - Google Patents
Power cable connection inspection methodInfo
- Publication number
- JPH0795085B2 JPH0795085B2 JP61275422A JP27542286A JPH0795085B2 JP H0795085 B2 JPH0795085 B2 JP H0795085B2 JP 61275422 A JP61275422 A JP 61275422A JP 27542286 A JP27542286 A JP 27542286A JP H0795085 B2 JPH0795085 B2 JP H0795085B2
- Authority
- JP
- Japan
- Prior art keywords
- power cable
- outer semiconductive
- connection portion
- semiconductive layer
- high resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Testing Relating To Insulation (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Processing Of Terminals (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は電力ケーブル、特に押出絶縁電力ケーブルの接
続部の欠陥等を検査する電力ケーブルの接続部の検査方
法に関する。Description: TECHNICAL FIELD The present invention relates to a power cable, and more particularly to a method for inspecting a connection portion of a power insulation cable for inspecting a connection portion of the power cable for defects.
（従来の技術） CVケーブル（架橋ポリエチレン電力ケーブル）等の押出
絶縁電力ケーブル、例えば三層押出電力ケーブル（以下
単に電力ケーブル）は一般に第４図に示すように構成さ
れ、電力ケーブル１は導体２に内部半導電層３、絶縁層
４、外部半導電層５、遮蔽層（メタルシールド）６及び
シース７を順次被覆して形成される。このような構造の
電力ケーブル１を作業現場で接続する場合、第５図に示
すように接続すべき２本の電力ケーブル１、１の各導体
２、２のスリーブ８により圧着接続した後押出機を使用
して当該接続部分を補強絶縁層９により被覆し、当該補
強絶縁層９を半導電層５′及び遮蔽層６′で被覆し、こ
れらの各半導電層５′、遮蔽層６′の両端を各ケーブル
１、１の各半導電層５、５、各遮蔽層６、６と夫々接続
するようにしている。(Prior Art) An extrusion insulated power cable such as a CV cable (cross-linked polyethylene power cable), for example, a three-layer extrusion power cable (hereinafter simply referred to as power cable) is generally configured as shown in FIG. The inner semiconductive layer 3, the insulating layer 4, the outer semiconductive layer 5, the shielding layer (metal shield) 6 and the sheath 7 are sequentially coated on the inner surface of the inner layer 3. When the power cable 1 having such a structure is to be connected at a work site, it is crimped by the respective conductors 2 of the two power cables 1 to be connected and the sleeves 8 of the two power cables 1 as shown in FIG. Is used to cover the connecting portion with a reinforcing insulating layer 9, and the reinforcing insulating layer 9 is covered with a semiconductive layer 5'and a shielding layer 6 '. Both ends are connected to the semiconductive layers 5 and 5 of the cables 1 and 1 and the shielding layers 6 and 6, respectively.
かかる電力ケーブル１、１の接続部10の品質管理は前記
補強絶縁層９内への異物の混入、ケーブル１、１の絶縁
層４、４と補強絶縁層９との接着不良、当該補強絶縁層
９体中のボイド発生、内、外の各半導電層の突起等の欠
陥が発生しないように徹底的な作業の標準化を図ると共
に、ケーブルの接続完了後Ｘ線検査等により当該接続部
の欠陥の有無をチェックしている。The quality control of the connecting portion 10 of the power cables 1 and 1 is performed by mixing foreign matter into the reinforcing insulating layer 9, poor adhesion between the insulating layers 4 and 4 of the cables 1 and 1 and the reinforcing insulating layer 9, and the reinforcing insulating layer. We will thoroughly standardize the work so as to prevent voids in 9 bodies and defects such as protrusions of the inner and outer semiconductive layers, and at the same time, check the defects of the relevant connection parts by X-ray inspection after completing the cable connection. Checking for
（発明が解決しようとする課題） しかしながら、上記従来のＸ線検査においては検出でき
る欠陥の大きさは、欠陥等のタイプと存在する位置、接
続部の大きさ等により異なるが、せいぜい異物で200〜3
00μ、ボイドでも同程度であり、現実には有害とされる
程度の大きさの検出能力が無い状態である。また、電気
的テストは全線路完成後の直流耐圧試験を実施している
のみであり、完成線路で全長に亘る部分放電、tanδ測
定等は感度の点で接続部の欠陥の検出には不適当であ
る。(Problems to be Solved by the Invention) However, the size of a defect that can be detected in the above-described conventional X-ray inspection varies depending on the type of the defect, the existing position, the size of the connection portion, etc. ~ 3
00μ is the same level with voids, and it is in a state where it does not have the detection ability of a size that is actually harmful. In addition, the electrical test is only a DC withstand voltage test after the completion of the entire line, and partial discharge over the entire length of the completed line, tan δ measurement, etc. are not suitable for detecting defects at the connection part due to sensitivity. Is.
このため、ケーブルは工場で十分検査をした後出荷して
いるが、接続部は前述のように十分な検査をすることが
出来ないままに実使用に移されることとなり、線路全体
の信頼性に欠けるという問題がある。For this reason, the cables are shipped after being thoroughly inspected at the factory, but the connection parts will be put into actual use without being fully inspected as described above, and the reliability of the entire line will be reduced. There is a problem of chipping.
本発明の上述の問題点を解決するためになされたもの
で、電力ケーブルの接続部の欠陥の有無を高感度で検査
可能な電力ケーブルの接続部の検査方法を提供すること
を目的とする。The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a method for inspecting a connection portion of a power cable, which can inspect for a defect in the connection portion of the power cable with high sensitivity.
（問題点を解決するための手段） 上記目的を達成するために本発明によれば、電力ケーブ
ルの接続部の両側の外部半導電層及び当該接続の外部半
導電層の略中央位置に夫々高抵抗部を形成すると共に当
該外部半導電層を被覆する遮蔽層の前記各高抵抗部と対
応する箇所を電気的に分離し、前記接続せる電力ケーブ
ルの導体と前記接続部の各遮蔽層との間に夫々電界を印
加して部分放電を差動法により測定して前記接続部を検
査するものである。(Means for Solving the Problems) In order to achieve the above object, according to the present invention, the outer semiconductive layers on both sides of the connection portion of the power cable and the outer semiconductive layers of the connection are respectively provided with substantially high positions. Between the conductor of the power cable to be connected and each shield layer of the connection part, the resistance part is formed and the part corresponding to each of the high resistance parts of the shield layer covering the outer semiconductive layer is electrically separated. An electric field is applied between them to measure the partial discharge by the differential method to inspect the connecting portion.
（作用） 電力ケーブルの導体と接続部の遮蔽層との間に電界を印
加し、前記導体と前記接続部の遮蔽層との間のみの部分
放電を測定する際に、接続部の略中央位置にも高抵抗部
を設け、前記中央位置に設けた高抵抗部を対応する遮蔽
層を電気的に分離することにより、静電容量が小さくか
つ互いにほぼ同等の２つの被検体を接続部に形成するこ
とができる。(Operation) When an electric field is applied between the conductor of the power cable and the shield layer of the connection portion, and the partial discharge only between the conductor and the shield layer of the connection portion is measured, a substantially central position of the connection portion A high resistance portion is also provided, and by electrically separating the shielding layer corresponding to the high resistance portion provided at the central position, two test objects having a small electrostatic capacitance and almost equal to each other are formed in the connection portion. can do.
（実施例） 以下本発明の実施例を添付図面に基づいて詳述する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the accompanying drawings.
第１図において接続すべき電力ケーブル１、１の各導体
２、２は夫々スリーブ８により互いに圧着接続され、当
該接続部分は補強絶縁層９により被覆されて絶縁され
る。各ケーブル１、１の各外部半導電層５、５と接続部
10の外部半導電層５′とは電気的に接続され、且つ各接
続部分の両側の近傍位置11、11において、例えば各ケー
ブル１、１側の外部半導電層５、５の一部に夫々高抵抗
部15、15が形成されている。In FIG. 1, the conductors 2 and 2 of the power cables 1 and 1 to be connected are crimp-connected to each other by a sleeve 8, and the connection portion is covered with a reinforcing insulating layer 9 to be insulated. External semiconductive layers 5 and 5 of each cable 1 and connection part
The outer semiconductive layer 5'of 10 is electrically connected, and at the adjacent positions 11, 11 on both sides of each connection part, for example, a part of the outer semiconductive layer 5, 5 of each cable 1, 1 side, respectively. The high resistance portions 15 and 15 are formed.
この高抵抗部15は、例えば第２図（ａ）に示すように、
外部半導電層５を所定幅Ｗ（約10cm）で全周に亘り環状
に削りその肉厚ｄを元の肉厚（約1mm）の略1/3〜1/4
（約0.3mm）程度の薄肉とし、当該薄肉部5aの抵抗値を
約数ｋΩ〜数10kΩに設定する。尚、この薄肉部5aの肉
厚ｄはその幅Ｗとの関係で適宜の肉厚に設定すればよ
く、当該薄肉部5aの両端ａ、ｂ間の抵抗値を前記数ｋΩ
〜数10kΩとするように設定する。The high resistance portion 15 is, for example, as shown in FIG.
The outer semiconductive layer 5 is cut into an annular shape with a predetermined width W (about 10 cm) over the entire circumference, and its thickness d is approximately 1/3 to 1/4 of the original thickness (about 1 mm).
The thin wall portion 5a is made thin (about 0.3 mm), and the resistance value of the thin portion 5a is set to about several kΩ to several tens kΩ. The thickness d of the thin portion 5a may be set to an appropriate thickness in relation to the width W thereof, and the resistance value between both ends a and b of the thin portion 5a is set to the above several kΩ.
~ Set to several tens of kΩ.
また、高抵抗部15は第２図（ｂ）〜（ｄ）のようにして
形成してもよく、第２図（ｂ）は外部半導電層５の適宜
の部分5bに膨潤を起こさせる膨潤液、例えば鉱油を刷毛
で塗布して膨潤させ、当該塗布部分5bの両端ａ、ｂ間の
抵抗値を数ｋΩ〜数10kΩとするものである。尚、前記
鉱油を直接塗布する代わりに当該鉱油を染み込ませたテ
ープを外部半導電層５に巻回してもよい。また、外部半
導電層５に膨潤を起こさせるものとしては前記鉱油の他
に、例えばポリブテン油、ベンゼン、キシレン、トルエ
ン等があり、これらの内適宜のものを前記鉱油に代えて
使用してもよい。Further, the high resistance portion 15 may be formed as shown in FIGS. 2 (b) to (d), and FIG. 2 (b) shows swelling that causes swelling in an appropriate portion 5b of the outer semiconductive layer 5. A liquid, for example, mineral oil is applied with a brush to swell it, and the resistance value between both ends a and b of the applied portion 5b is set to several kΩ to several tens kΩ. Instead of directly applying the mineral oil, a tape impregnated with the mineral oil may be wound around the outer semiconductive layer 5. In addition to the above-mentioned mineral oil, there are, for example, polybutene oil, benzene, xylene, toluene, and the like, which cause the outer semiconductive layer 5 to swell. Even if an appropriate one of these is used in place of the mineral oil. Good.
或いは第２図（ｃ）に示すように、外部半導電層５の一
部を環状に除去し、当該除去部分5cに高抵抗部材SiC等
の強誘電体を練り込んだポリマー材のテープを巻回して
高抵抗層（ポリマブレンド層）17を形成してもよい。こ
のSiCの強誘電体は直流の体積固有抵抗率は105〜1011Ω
cm、50Hzの交流に対する抵抗率は104〜106Ωcm程度であ
る。Alternatively, as shown in FIG. 2 (c), a part of the outer semiconductive layer 5 is removed in a ring shape, and a tape made of a polymer material in which a ferroelectric material such as a high resistance member SiC is kneaded is wound around the removed portion 5c. The high resistance layer (polymer blend layer) 17 may be formed by turning. This SiC ferroelectric has a direct current volume resistivity of 10 5 to 10 11 Ω.
The resistivity for alternating current of cm and 50 Hz is about 10 4 to 10 6 Ωcm.
更に、同図（ｄ）に示すようにケーブル１の外部半導電
層５の端部5dと接続部10の外部半導電層５′の端部５′
ａとをオーバーラップさせ、これら両者間に絶縁層で形
成した高抵抗部18を介在させてもよい。Further, as shown in FIG. 3D, the end 5d of the outer semiconductive layer 5 of the cable 1 and the end 5'of the outer semiconductive layer 5'of the connecting portion 10 are connected.
It is also possible to overlap a and to interpose the high resistance portion 18 formed of an insulating layer between them.
また、各高抵抗部15、15と対応する位置における各遮蔽
層６、６の各端部6a、6aと、接続部10の遮蔽層６′の両
端６′ａ、６′ａとの間を分離させて電気的に分離す
る。In addition, between the end portions 6a, 6a of the shielding layers 6, 6 at positions corresponding to the high resistance portions 15, 15 and both ends 6'a, 6'a of the shielding layer 6'of the connection portion 10, respectively. Separate and electrically separate.
また前記接続部10の略中央位置において当該接続部10の
外部半導電層５′に高抵抗部15を形成して当該外部半導
電層５′を２つに分割すると共に、遮蔽層６′を電気的
に２つに分離したもので、外部半導電層５′の高抵抗部
15は前述と同様に形成し、遮蔽層６′は切断して各端部
６′ｂ、６′ｂを隔離させる。Further, a high resistance portion 15 is formed in the outer semiconductive layer 5'of the connection portion 10 at a substantially central position of the connection portion 10 to divide the outer semiconductive layer 5'into two, and the shield layer 6'is formed. Highly resistive part of the outer semiconductive layer 5 ', which is electrically separated into two parts.
15 is formed in the same manner as described above, and the shielding layer 6'is cut to separate the respective end portions 6'b and 6'b.
かかる構造の接続部10は２つに分離した各遮蔽層６′、
６′に夫々検出インピーダンスを介してコロナ測定器
（共に図示せず）を接続し、ケーブル１の導体２と各遮
蔽層６′、６′との各間に夫々発生する部分放電を差動
法により測定して欠陥を検出する。The connecting portion 10 having such a structure is divided into two shielding layers 6 ',
6'is connected to corona measuring devices (both not shown) via respective detection impedances, and the partial discharge generated between the conductor 2 of the cable 1 and each of the shielding layers 6 ', 6'is differentially measured. To detect defects.
第３図は本発明に係るケーブル接続部の検査方法による
欠陥検査の例を示し、第３図は耐圧154kV、１×1400mm2
のCVケーブルを第１図に示すように接続し、当該接続部
10の補強絶縁層９の一側、例えば図中左側に直径約200
μの模擬ボイド9cを形成した後、接続部10に金属ボック
ス20、20を装着し、当該接続部10の各遮蔽層６′、６′
から夫々絶縁部材25、25を介して接続コードを導出し、
検出インピーダンス30、30を介してコロナ測定器31に差
動入力させ、ケーブル１の導体２に50Hzの交流電圧を印
加してその電圧を徐々に昇圧させたところ、120kVで検
出レベル0.5pcの感度で前記欠陥9bを検出することがで
きた。尚、当該実施例ではケーブル１、１の各外部半導
電層５、５の各高抵抗部15、15はSiCを練り込んだ高抵
抗テープをこれらの外部半導電層１、１に削り込んで形
成した溝（第２図（ａ）の5aの部分）に巻回して形成し
た。FIG. 3 shows an example of a defect inspection by the inspection method of the cable connecting portion according to the present invention, and FIG. 3 shows a withstand voltage of 154 kV, 1 × 1400 mm 2
Connect the CV cable of as shown in Fig. 1, and
On one side of the 10 reinforcing insulating layers 9, for example, on the left side in the figure, a diameter of about 200
After forming the simulated void 9c of μ, the metal boxes 20, 20 are attached to the connecting portion 10, and the shielding layers 6 ', 6'of the connecting portion 10 are mounted.
From each of the insulating cords 25, 25 through the connection cord,
When differential input was made to the corona measuring instrument 31 via the detection impedances 30 and 30, and AC voltage of 50Hz was applied to the conductor 2 of the cable 1 to gradually increase the voltage, the sensitivity of detection level 0.5pc at 120kV. It was possible to detect the defect 9b. In the embodiment, the high resistance portions 15, 15 of the outer semiconductive layers 5, 5 of the cables 1, 1 are made by cutting a high resistance tape containing SiC into the outer semiconductive layers 1, 1. It was formed by winding around the formed groove (portion 5a in FIG. 2 (a)).
（発明の効果） 以上説明したように本発明によれば、電力ケーブルの接
続部の両側の外部半導電層及び当該接続部の外部半導電
層の略中央位置に夫々高抵抗部を形成すると共に当該外
部半導電層を被覆する遮蔽層の前記各高抵抗部と対応す
る箇所を電気的に分離することにより、静電容量が小さ
くかつ互いにほぼ同等の２つの被検体を接続部に形成す
ることができる。そして前記接続せる電力ケーブルの導
体と前記接続部の各遮蔽層との間に夫々電界を印加して
部分放電を差動法により測定して前記接続部の欠陥を検
査するようにしたので、当該接続部の微細な欠陥等を迅
速に且つ容易に検出することが可能となる。従って本発
明によれば、測定精度が向上し、かつ欠陥部の位置認定
を狭い範囲で行うことができる電力ケーブルの接続部の
検査方法を提供することができる。(Effects of the Invention) As described above, according to the present invention, the high resistance portions are formed in the outer semiconductive layers on both sides of the connection portion of the power cable and in the substantially central positions of the outer semiconductive layers of the connection portion. By electrically separating a portion corresponding to each of the high resistance portions of the shielding layer covering the outer semiconductive layer, two test objects having a small capacitance and substantially the same as each other are formed in the connection portion. You can Then, an electric field is applied between the conductor of the power cable to be connected and each shielding layer of the connection portion to measure the partial discharge by the differential method to inspect the connection portion for defects. It becomes possible to detect minute defects and the like of the connection portion quickly and easily. Therefore, according to the present invention, it is possible to provide a method for inspecting a connection portion of a power cable, which can improve measurement accuracy and can identify the position of a defective portion in a narrow range.
第１図は本発明に係る電力ケーブルの接続部の検査方法
を適用するケーブルの接続部の一実施例を示す要部断面
図、第２図は第１図の接続部の外部半導電層に形成する
高抵抗部の説明図、第３図は第１図に示す接続部に金属
ボックスを装着した状態における欠陥の検査方法を示す
図、第４図は電力ケーブルの断面図、第５図は電力ケー
ブルの従来の接続部の断面図である。 １……電力ケーブル、２……導体、３……内部半導電
層、４……絶縁層、５、５′……外部半導電層、６、
６′……遮蔽層、７……シース、８……スリーブ、９…
…補強絶縁層、10……接続部、15〜19……高抵抗部、20
……金属ボックス、30……検出インピーダンス、31……
コロナ測定器。FIG. 1 is a cross-sectional view of an essential part showing an embodiment of a cable connecting portion to which the method for inspecting the connecting portion of a power cable according to the present invention is applied, and FIG. 2 is an outer semiconductive layer of the connecting portion in FIG. FIG. 3 is an explanatory view of a high resistance portion to be formed, FIG. 3 is a view showing a method of inspecting a defect in a state where a metal box is attached to the connection portion shown in FIG. 1, FIG. 4 is a sectional view of a power cable, and FIG. It is sectional drawing of the conventional connection part of a power cable. 1 ... Power cable, 2 ... Conductor, 3 ... Inner semiconductive layer, 4 ... Insulating layer, 5, 5 '... Outer semiconductive layer, 6,
6 '... shielding layer, 7 ... sheath, 8 ... sleeve, 9 ...
… Reinforced insulating layer, 10 …… Connection part, 15-19 …… High resistance part, 20
…… Metal box, 30 …… Detection impedance, 31 ……
Corona measuring instrument.
Claims (9)
層及び当該接続部の外部半導電層の略中央位置に夫々高
抵抗部を形成すると共に当該外部半導電層を被覆する遮
蔽層の前記各高抵抗部と対応する箇所を電気的に分離
し、前記接続せる電力ケーブルの導体と前記接続部の各
遮蔽層との間に夫々電界を印加して部分放電を差動法に
より測定して前記接続部を検査することを特徴とする電
力ケーブルの接続部の検査方法。1. A high-resistance portion is formed in each of the outer semiconductive layers on both sides of a connection portion of a power cable and a substantially central position of the outer semiconductive layer of the connection portion, and a shield layer covering the outer semiconductive layer is formed. The portions corresponding to the high resistance portions are electrically separated, and an electric field is applied between the conductor of the power cable to be connected and each shielding layer of the connection portion to measure partial discharge by a differential method. A method for inspecting a connection portion of a power cable, comprising: inspecting the connection portion.
てその肉厚を薄くして形成することを特徴とする特許請
求の範囲第１項記載の電力ケーブルの接続部の検査方
法。2. The method for inspecting a connection portion of a power cable according to claim 1, wherein the high resistance portion is formed by cutting the outer semiconductive layer to reduce its thickness. .
熱履歴を付与して形成することを特徴とする特許請求の
範囲第１項記載の電力ケーブルの接続部の検査方法。3. The method of inspecting a connection portion of a power cable according to claim 1, wherein the high resistance portion is formed by applying a high temperature heat history to the outer semiconductive layer.
部半導電層を膨潤させる膨潤液を染み込ませて形成する
ことを特徴とする特許請求の範囲第１項記載の電力ケー
ブルの接続部の検査方法。4. The power cable connection according to claim 1, wherein the high resistance portion is formed by impregnating the outer semiconductive layer with a swelling liquid for swelling the outer semiconductive layer. Inspection method.
体を混ぜたポリマー材のテープを巻回することにより形
成することを特徴とする特許請求の範囲第１項記載の電
力ケーブルの接続部の検査方法。5. The power cable according to claim 1, wherein the high resistance portion is formed by winding a tape made of a polymer material mixed with a ferroelectric substance on the outer semiconductive layer. Inspection method of the connection part.
体を混ぜたポリマー材のテープを巻回後加熱融着するこ
とにより形成することを特徴とする特許請求の範囲第５
項記載の電力ケーブルの接続部の検査方法。6. The high resistance portion is formed by winding a tape made of a polymer material in which a ferroelectric substance is mixed with the outer semiconductive layer and then heating and fusing the tape.
The inspection method of the connection part of the power cable described in the item.
の両端と前記接続せる各ケーブルの各外部半導電層の各
一端とを夫々オーバーラップさせ、これらの各オーバー
ラップする各外部半導電層の間に夫々絶縁部材を介在さ
せて形成することを特徴とする特許請求の範囲第１項記
載の電力ケーブルの接続部の検査方法。7. The high resistance portion overlaps both ends of the outer semiconductive layer of the connection portion and one end of each outer semiconductive layer of each of the cables to be connected, and each of these overlapping outer portions. The method for inspecting a connection portion of a power cable according to claim 1, wherein the semiconductive layers are formed by interposing insulating members therebetween.
る特許請求の範囲第１項記載の電力ケーブルの接続部の
検査方法。8. The method of inspecting a connection portion of a power cable according to claim 1, wherein the electric field is a direct current electric field.
の交番電界であることを特徴とする特許請求の範囲第１
項記載の電力ケーブルの接続部の検査方法。9. The electric field according to claim 1, which is an alternating electric field from a very low frequency of 0.1 Hz to several kHz.
The inspection method of the connection part of the power cable described in the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61275422A JPH0795085B2 (en) | 1986-11-20 | 1986-11-20 | Power cable connection inspection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61275422A JPH0795085B2 (en) | 1986-11-20 | 1986-11-20 | Power cable connection inspection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63131079A JPS63131079A (en) | 1988-06-03 |
| JPH0795085B2 true JPH0795085B2 (en) | 1995-10-11 |
Family
ID=17555290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61275422A Expired - Fee Related JPH0795085B2 (en) | 1986-11-20 | 1986-11-20 | Power cable connection inspection method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0795085B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6447966A (en) * | 1987-08-19 | 1989-02-22 | Hitachi Cable | Detection of partial discharge for cable line |
| JP2540918B2 (en) * | 1988-09-30 | 1996-10-09 | 日立電線株式会社 | Insulation deterioration monitoring device for cable lines |
| JP2674265B2 (en) * | 1990-03-20 | 1997-11-12 | 日立電線株式会社 | Partial discharge detection method for prefabricated type connection part for CV cable |
| KR20040039720A (en) * | 2002-11-04 | 2004-05-12 | 박후원 | Detecting means non-destructive of proximity lead |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53114086A (en) * | 1977-03-16 | 1978-10-05 | Nishinippon Elec Wire Cable | Method of dividing and measuring partial discharge of each portion of cable |
| JPS6073372A (en) * | 1983-09-30 | 1985-04-25 | Yazaki Corp | Resistance separation structure in measurement of partial discharge of power cable |
-
1986
- 1986-11-20 JP JP61275422A patent/JPH0795085B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63131079A (en) | 1988-06-03 |
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