JPH0795565B2 - Static electricity protection device for complementary MIS integrated circuit - Google Patents
Static electricity protection device for complementary MIS integrated circuitInfo
- Publication number
- JPH0795565B2 JPH0795565B2 JP61210228A JP21022886A JPH0795565B2 JP H0795565 B2 JPH0795565 B2 JP H0795565B2 JP 61210228 A JP61210228 A JP 61210228A JP 21022886 A JP21022886 A JP 21022886A JP H0795565 B2 JPH0795565 B2 JP H0795565B2
- Authority
- JP
- Japan
- Prior art keywords
- protection device
- integrated circuit
- conductivity type
- well
- concentration layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、相補型MIS集積回路の静電気保護装置に関
し、特に、相補型MIS集積回路の静電気保護装置の保護
ダイオードの構成に関する。Description: TECHNICAL FIELD The present invention relates to a static electricity protection device for a complementary MIS integrated circuit, and more particularly to a configuration of a protection diode for a static electricity protection device for a complementary MIS integrated circuit.
従来、この種の保護ダイオードは、第３図の如く、第一
導電型半導体基板１内に形成された第二導電型高濃度層
６と、前記基板との間のPN接合ダイオードと、前記基板
内に設けられた第二導電型ウェル２と、前記ウェルの中
に形成された第一導電型高濃度層７とにより成るPN接合
ダイオードの２種類のダイオードにより構成されてい
た。Conventionally, as shown in FIG. 3, a protection diode of this type includes a PN junction diode between a second conductivity type high concentration layer 6 formed in a first conductivity type semiconductor substrate 1 and the substrate, and the substrate. It is composed of two types of diodes, a PN junction diode, which is composed of a second conductivity type well 2 provided inside and a first conductivity type high concentration layer 7 formed in the well.
第２図は静電気保護装置の回路図であるが、第２図回路
図中の高電位側ダイオードは、Ｎウェル２とＮウェル中
Ｐ型高濃度層７で構成され、低電位側ダイオードは、Ｐ
型基板１と基板側Ｎ型高濃度層６とで構成されており、
２つの異なる種類のPN接合によるダイオードが用いられ
ている。FIG. 2 is a circuit diagram of the electrostatic protection device. The high potential side diode in the circuit diagram of FIG. 2 is composed of the N well 2 and the P type high concentration layer 7 in the N well, and the low potential side diode is P
It is composed of the mold substrate 1 and the N-type high concentration layer 6 on the substrate side,
Diodes with two different types of PN junctions are used.
上述した従来の保護ダイオードでは、２種類のPN接合、
すなわち、第一導電型基板と第二導電型高濃度層での接
合、及び、第二導電型ウェルと第一導電型高濃度層での
接合を用いておりおのおの接合耐圧，順方向特性，直列
抵抗が異なっており、保護素子の設計に対するパラメー
タが多くなり、なおかつ、静電気の放電経路により、ダ
イオードの種類，方向が異なり信頼度のある設計が困難
であった。In the above-mentioned conventional protection diode, two types of PN junctions,
That is, the junction between the first-conductivity-type substrate and the second-conductivity-type high-concentration layer, and the junction between the second-conductivity-type well and the first-conductivity-type high-concentration layer are used. The resistance is different, the number of parameters for designing the protection element is large, and the type and direction of the diode are different due to the electrostatic discharge path, which makes reliable design difficult.
本発明の目的は、従来の欠点を除去し、保護ダイオード
に適用するPN接合を一種類にすることにより設計精度を
大幅に向上させ、ひいては、保護能力の高い相補型MIS
集積回路の静電気保護装置を提供することにある。The object of the present invention is to eliminate the conventional drawbacks and significantly improve the design accuracy by using only one type of PN junction applied to the protection diode.
An object is to provide an electrostatic protection device for an integrated circuit.
このためにこの発明では、半導体基板に形成されるMIS
集積回路の入力端子と高電位電源との間および前記入力
端子と低電位電源との間にそれぞれ接続される静電気保
護用ダイオードを備えた静電気保護装置において、第一
導電型の前記半導体基板に形成された第二導電型ウェル
と、該ウェルの中に形成された第一導電型高濃度層とに
より形成された一種類のみのPN接合ダイオードにより前
記静電気保護用ダイオードが構成される。Therefore, in the present invention, the MIS formed on the semiconductor substrate is
In an electrostatic protection device having electrostatic protection diodes connected between an input terminal of an integrated circuit and a high potential power supply and between the input terminal and a low potential power supply, the electrostatic protection device is formed on the semiconductor substrate of the first conductivity type. The static electricity protection diode is composed of only one type of PN junction diode formed by the formed second conductivity type well and the first conductivity type high concentration layer formed in the well.
また、これに使用されるPN接合ダイオードの接合耐圧は
第二導電型ウェル中の第二導電型高濃度層と前記ウェル
の中に形成された第一導電型高濃度層との間隔の調整に
より高精度に決定することができる。Also, the junction breakdown voltage of the PN junction diode used for this is adjusted by adjusting the distance between the second conductivity type high concentration layer in the second conductivity type well and the first conductivity type high concentration layer formed in the well. It can be determined with high accuracy.
次に、本発明の実施例について、図面を参照して説明す
る。第１図は本発明の一実施例を示すダイオード部の断
面図である。Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of a diode portion showing an embodiment of the present invention.
本実施例ではＰ型基板の場合で、Ｐ型基板１の中にＮ型
ウェル２が形成されている。Ｐ型高濃度層７とＮ型ウェ
ル２との間のPN接合を保護ダイオードとして使用してお
り、第２図に示す保護回路を参照しながら説明すると、
端子から保護抵抗10を通った接点11より高電位側電源V
DDへの保護ダイオード８の陽極は、Ｎウェル中のＰ型高
濃度層７であり、陰極は電極VDDから、Ｎ型高濃度層６
を介して、Ｎウェル２に接続されている。一方接点11よ
り低電位側（本実施例では接地電極）への保護ダイオー
ド９の陽極は、Ｎウェル中のＰ型高濃度層７を介して、
接地電極へ接続され、陰極はＮウェル２であり、Ｎ型高
濃度層６を介して、接点11へ接続されている。以上の構
成により、保護ダイオードとしてのＰ−Ｎ接合は、一種
類のみで、実現でき、また、上述のＰ型高濃度層７と、
Ｎ型高濃度層６との間隔を適宜定めることにより、リー
チスルーダイオードとして、耐圧を設計することもでき
る。In this embodiment, the P-type substrate is used, and the N-type well 2 is formed in the P-type substrate 1. The PN junction between the P-type high-concentration layer 7 and the N-type well 2 is used as a protection diode, which will be described with reference to the protection circuit shown in FIG.
Higher potential side power supply V than the contact 11 that passes through the protective resistance 10 from the terminal
The anode of the protection diode 8 to the DD is the P type high concentration layer 7 in the N well, and the cathode is from the electrode V DD to the N type high concentration layer 6
Is connected to the N well 2 via. On the other hand, the anode of the protection diode 9 from the contact 11 to the lower potential side (the ground electrode in this embodiment) is connected via the P-type high concentration layer 7 in the N well,
It is connected to the ground electrode, the cathode is the N well 2, and is connected to the contact 11 via the N-type high concentration layer 6. With the above configuration, the P-N junction as the protection diode can be realized by only one type, and the P-type high concentration layer 7 and
The breakdown voltage can be designed as a reach-through diode by appropriately setting the distance from the N-type high concentration layer 6.
以上説明したように、本発明は、保護ダイオードに適用
するPN接合を、一種類にすることにより、設計精度を大
幅に向上させ、ひいては、保護能力の高い保護装置を提
供できる効果がある。As described above, the present invention has the effect of significantly improving the design accuracy by providing only one type of PN junction applied to the protection diode, and thus providing a protection device with high protection capability.
第１図は本発明の一実施例の保護ダイオードの断面図、
第２図は静電気保護装置の回路図、第３図は、従来の相
補型MIS集積回路の静電気保護装置の一例の断面図であ
る。 １……Ｐ型基板、２……Ｎ型ウェル、３……酸化膜、４
……層間絶縁膜、５……アルミニウム、６……Ｎ型高濃
度層、７……Ｐ型高濃度層、８……高電位側保護ダイオ
ード、９……低電位側保護ダイオード、10……保護抵
抗、11……接点。FIG. 1 is a sectional view of a protection diode according to an embodiment of the present invention,
FIG. 2 is a circuit diagram of an electrostatic protection device, and FIG. 3 is a sectional view of an example of a conventional electrostatic protection device for a complementary MIS integrated circuit. 1 ... P-type substrate, 2 ... N-type well, 3 ... oxide film, 4
...... Interlayer insulating film, 5 ... Aluminum, 6 ... N-type high concentration layer, 7 ... P-type high concentration layer, 8 ... High potential side protection diode, 9 ... Low potential side protection diode, 10 ... Protective resistance, 11 ... Contact.
Claims (2)
力端子と高電位電源との間および前記入力端子と低電位
電源との間にそれぞれ接続される静電気保護用ダイオー
ドを備えた静電気保護装置において、第一導電型の前記
半導体基板に形成された第二導電型ウェルと、該ウェル
の中に形成された第一導電型高濃度層とにより形成され
た一種類のみのPN接合ダイオードにより前記静電気保護
用ダイオードが構成されていることを特徴とする相補型
MIS集積回路の静電気保護装置。1. An electrostatic protection device including an electrostatic protection diode connected between an input terminal of a MIS integrated circuit formed on a semiconductor substrate and a high-potential power supply, and between the input terminal and a low-potential power supply, respectively. In the second conductivity type well formed on the semiconductor substrate of the first conductivity type, and the PN junction diode of only one kind formed by the high concentration layer of the first conductivity type formed in the well. Complementary type characterized by being configured with an electrostatic protection diode
MIS integrated circuit electrostatic protection device.
と前記ウェルの中に形成された第一導電型高濃度層との
間隔にて接合耐圧が設計されていることを特徴とする特
許請求の範囲第（１）項記載の相補型MIS集積回路の静
電気保護装置。2. A junction breakdown voltage is designed at a distance between a second conductivity type high concentration layer in a second conductivity type well and a first conductivity type high concentration layer formed in the well. An electrostatic protection device for a complementary MIS integrated circuit according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61210228A JPH0795565B2 (en) | 1986-09-05 | 1986-09-05 | Static electricity protection device for complementary MIS integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61210228A JPH0795565B2 (en) | 1986-09-05 | 1986-09-05 | Static electricity protection device for complementary MIS integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6365665A JPS6365665A (en) | 1988-03-24 |
| JPH0795565B2 true JPH0795565B2 (en) | 1995-10-11 |
Family
ID=16585905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61210228A Expired - Lifetime JPH0795565B2 (en) | 1986-09-05 | 1986-09-05 | Static electricity protection device for complementary MIS integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0795565B2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088308B2 (en) * | 1989-12-26 | 1996-01-29 | 東芝マイクロエレクトロニクス株式会社 | Input/Output Protection Device |
| JP2754072B2 (en) * | 1990-02-07 | 1998-05-20 | 三菱電機株式会社 | Input circuit of semiconductor device |
| JP5706394B2 (en) | 2009-03-25 | 2015-04-22 | ルミニアム エルエルシーＬｕｍｅｎｉｕｍ Ｌｌｃ | Rotary engine |
| US10184392B2 (en) | 2012-03-14 | 2019-01-22 | Lumenium Llc | Single chamber multiple independent contour rotary machine |
| EP2825730A4 (en) | 2012-03-14 | 2015-09-30 | Lumenium Llc | Idar-ace inverse displacement asymmetric rotating alternative core engine |
| US9309765B2 (en) | 2012-03-14 | 2016-04-12 | Lumenium Llc | Rotary machine |
| US12146411B2 (en) | 2015-04-13 | 2024-11-19 | Lumenium Llc | Rotary machine |
| US11920476B2 (en) | 2015-04-13 | 2024-03-05 | Lumenium Llc | Rotary machine |
| WO2016168320A1 (en) | 2015-04-13 | 2016-10-20 | Lumenium Llc | Single chamber multiple independent contour rotary machine |
| WO2021232025A1 (en) | 2020-05-15 | 2021-11-18 | Lumenium Llc | Rotary machine with hub driven transmission articulating a four bar linkage |
| WO2020113109A1 (en) | 2018-11-27 | 2020-06-04 | Lumenium Llc | Rotary engine with recirculating arc roller power transfer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57147278A (en) * | 1981-03-05 | 1982-09-11 | Fujitsu Ltd | Protecting device for mis integrated circuit |
| JPS5821374A (en) * | 1981-07-29 | 1983-02-08 | Toshiba Corp | Semiconductor device |
-
1986
- 1986-09-05 JP JP61210228A patent/JPH0795565B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6365665A (en) | 1988-03-24 |
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