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JPH0797092B2 - X-ray photoelectron analyzer - Google Patents
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JPH0797092B2 - X-ray photoelectron analyzer - Google Patents

X-ray photoelectron analyzer

Info

Publication number
JPH0797092B2
JPH0797092B2 JP63103166A JP10316688A JPH0797092B2 JP H0797092 B2 JPH0797092 B2 JP H0797092B2 JP 63103166 A JP63103166 A JP 63103166A JP 10316688 A JP10316688 A JP 10316688A JP H0797092 B2 JPH0797092 B2 JP H0797092B2
Authority
JP
Japan
Prior art keywords
energy
deflection
analyzer
sample
sample surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63103166A
Other languages
Japanese (ja)
Other versions
JPH01274050A (en
Inventor
福男 銭谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP63103166A priority Critical patent/JPH0797092B2/en
Publication of JPH01274050A publication Critical patent/JPH01274050A/en
Publication of JPH0797092B2 publication Critical patent/JPH0797092B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Analysing Materials By The Use Of Radiation (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はX線光電子分光法によって試料面の組成分布或
は状態分布を測定するいわゆるマッピング装置に関す
る。
The present invention relates to a so-called mapping device for measuring the composition distribution or state distribution of a sample surface by X-ray photoelectron spectroscopy.

(従来の技術) 試料面の或る領域において組成の平均ではなく、組成分
布を調べようとするときは試料面を2次元的に走査する
必要があり、通常走査型電子顕微鏡とか電子線マイクロ
アナライザを用い、電子ビームで試料面を走査し、試料
から放射される二次電子,反射電子,吸収電流,特性X
線等を検出すると云う方法が用いられている。
(Prior Art) It is necessary to scan the sample surface two-dimensionally in order to examine the composition distribution, not the average of the composition in a certain area of the sample surface, and it is necessary to scan the sample surface two-dimensionally. By scanning the surface of the sample with an electron beam, secondary electrons emitted from the sample, backscattered electrons, absorption current, characteristic X
A method of detecting a line or the like is used.

X線光電子分光法は試料表面のきわめて浅い層(数10)
の分析に適し、元素組成および元素の結合状態を調べる
ことができるので、試料の表面分析法としてきわめて優
れているが、試料を励起するのにX線をもちいるので、
励起範囲を電子ビームのように小さく絞ることができ
ず、励起線による試料面走査方式では充分な位置分解能
が得られない。
X-ray photoelectron spectroscopy is an extremely shallow layer (10) on the sample surface.
Since it is suitable for the analysis of and the element composition and the bonding state of the element can be investigated, it is extremely excellent as a surface analysis method of the sample, but since X-rays are used to excite the sample,
The excitation range cannot be narrowed down like an electron beam, and sufficient position resolution cannot be obtained by the sample plane scanning method using the excitation line.

このためX線光電子分析法による試料面のマッピングで
は励起X線で試料面の測定領域を照射し、試料面から放
射されるX線光電子を電子レンズによって結像させて試
料面の光電子による像を形成し、この像面を電子光学的
手段で走査してX線光電子のエネルギー分析を行うと云
う方法が採られている。第2図にそのような従来装置の
一例を示す。XはX線源でSは試料、eが試料から放射
された電子である。Lは電子レンズ系で、試料から放射
された電子による試料面の像をエネルギー分析器Eの入
射スリットIs設置面に形成する。試料Sと電子レンズL
との間にx,y偏向電極Px,Pyが配置され、これらの偏向電
極に電圧を印加すると、エネルギー分析器Eの入射スリ
ット面上で試料面の電子像が移動し、この移動によって
電子像面の走査が行われる。
Therefore, in the mapping of the sample surface by the X-ray photoelectron analysis method, the measurement area of the sample surface is irradiated with excited X-rays, and the X-ray photoelectrons emitted from the sample surface are imaged by an electron lens to form an image of the sample surface by the photoelectrons. A method of forming the image plane and scanning the image plane with an electron optical means to perform energy analysis of X-ray photoelectrons is adopted. FIG. 2 shows an example of such a conventional device. X is an X-ray source, S is a sample, and e is an electron emitted from the sample. L is an electron lens system that forms an image of the sample surface by the electrons emitted from the sample on the entrance slit Is installation surface of the energy analyzer E. Sample S and electron lens L
X, y deflection electrodes Px, Py are arranged between the deflection electrodes, and when a voltage is applied to these deflection electrodes, an electron image of the sample surface moves on the entrance slit surface of the energy analyzer E, and this movement causes an electron image. The surface is scanned.

(発明が解決しようとする課題) 上述した装置でエネルギー分析器で選別されるエネルギ
ーを変えて試料面の電子像を走査するとき次のような問
題がある。第2図において、偏向電極Px,Pyに印加する
電圧が同じであるときは偏向電極間を通る電子の振れ角
はエネルギーが小さい程大きい。従って選択したエネル
ギーの大小によって電子像面における走査範囲が小さく
なったり大きくなりして、種々のエネルギーの電子によ
る試料面の像を映像化した場合、エネルギーによって像
の倍率が異る。このため種々のエネルギーの電子による
試料面の像を比較検討するときは単純に比較ができず像
倍率を補正する必要があって、二次元的な画像データに
対してこのような倍率補正を行うことは大へん面倒なこ
とである。
(Problems to be Solved by the Invention) There are the following problems when the electron image on the sample surface is scanned by changing the energy selected by the energy analyzer in the above apparatus. In FIG. 2, when the voltages applied to the deflection electrodes Px and Py are the same, the deflection angle of the electrons passing between the deflection electrodes becomes larger as the energy becomes smaller. Therefore, the scanning range on the electron image plane becomes smaller or larger depending on the magnitude of the selected energy, and when an image of the sample surface is visualized by electrons of various energies, the magnification of the image varies depending on the energy. For this reason, when the images of the sample surface due to electrons of various energies are compared and examined, it is not possible to simply compare and it is necessary to correct the image magnification, and such magnification correction is performed on the two-dimensional image data. That's a lot of trouble.

このため本発明は面倒な倍率補正の演算等なしで種々な
エネルギーの電子像のデータを直接比較できるようにし
ようとするものである。
For this reason, the present invention is intended to enable direct comparison of data of electron images of various energies without complicated calculation of magnification correction.

(課題を解決するための手段) 偏向電極に印加する走査信号の振幅をエネルギー分析器
における選別エネルギーの設定と連動させて変化させる
ようにした。
(Means for Solving the Problem) The amplitude of the scanning signal applied to the deflection electrode is changed in association with the setting of the selection energy in the energy analyzer.

(作用) 電子が偏向電極間を通過することによって生ずる振れ角
は電子が偏向電極間を通過するのに要する時間に関係
し、通過に要する時間は電子のエネルギーに関係して、
偏向角は電極間電圧に比例し、電子のエネルギーに反比
例している。従って選別エネルギーの如何に関せず振れ
角を一定にするには電極間に印加する電圧Vを選択した
電子のエネルギーEに比例させるように設定すればよ
い。振れ角が同じであれば像倍率も同じになる。
(Function) The deflection angle caused by the electrons passing between the deflection electrodes is related to the time required for the electrons to pass between the deflection electrodes, and the time required for the passage is related to the energy of the electrons.
The deflection angle is proportional to the voltage between electrodes and inversely proportional to the energy of electrons. Therefore, in order to make the deflection angle constant irrespective of the selection energy, the voltage V applied between the electrodes may be set to be proportional to the energy E of the selected electron. If the shake angle is the same, the image magnification is also the same.

(実施例) 第1図に本発明の一実施例を示す。図でXは励起用X線
源、Sは試料、Lは電子レンズ系でEはエネルギー分析
器である。
(Embodiment) FIG. 1 shows an embodiment of the present invention. In the figure, X is an X-ray source for excitation, S is a sample, L is an electron lens system, and E is an energy analyzer.

電子レンズ系Lは試料面から放射された電子をエネルギ
ー分析器Eの入射スリットIsの配置面上に収束させて試
料面の電子像を形成する。この像は種々なエネルギーの
電子による像が重なったものである。試料Sと電子レン
ズ系Lとの間にx方向偏向電極Px,y方向偏向電極Pyが配
置されている。エネルギー分析器は二重球面型エネルギ
ー分析器で、入射スリットIsから入射した電子のうち二
重球面電極間に印加されている電圧によって決まる特定
エネルギーの電子が出射スリットIoに収束せしめられ、
Ioを通過して電子検出器Dによって検出される。Uはエ
ネルギー分析器Eに印加する電圧を出力する電圧発生回
路、Vxはx方向偏向電極Pxに印加するx方向偏向電圧発
生回路、Vyは同じくy方向偏向電圧発生回路である。こ
れらの電圧発生回路は制御装置Cから出力されるディジ
タル信号をアナログ電圧信号に変換する回路である。電
子検出器Dの出力はAD変換されてメモリMに取込まれ
る。Bは測定結果を画像表示するCRT、Rはxy記録計
で、Kは制御装置Cに種々の指示やデータを入力するキ
ーボードである。
The electron lens system L converges the electrons emitted from the sample surface onto the arrangement surface of the entrance slit Is of the energy analyzer E to form an electron image of the sample surface. This image is a superposition of images of electrons of various energies. An x-direction deflection electrode Px and a y-direction deflection electrode Py are arranged between the sample S and the electron lens system L. The energy analyzer is a double spherical energy analyzer, and among the electrons incident from the entrance slit Is, electrons of specific energy determined by the voltage applied between the double spherical electrodes are converged on the exit slit Io,
It passes through Io and is detected by the electron detector D. U is a voltage generation circuit that outputs a voltage applied to the energy analyzer E, Vx is an x-direction deflection voltage generation circuit that is applied to the x-direction deflection electrode Px, and Vy is a y-direction deflection voltage generation circuit. These voltage generation circuits are circuits that convert a digital signal output from the control device C into an analog voltage signal. The output of the electronic detector D is AD converted and taken into the memory M. B is a CRT for displaying the measurement result as an image, R is an xy recorder, and K is a keyboard for inputting various instructions and data to the control device C.

今キーボードKによって選択するX線光電子のエネルギ
ーを指定すると制御装置Cはそのエネルギー値に応じた
ディジタル信号を電圧発生回路Uに出力し、エネルギー
分析器Eに所定の電圧を印加する。エネルギー走査の指
示を入力すると制御装置Cは時間的に変化するディジタ
ル信号を電圧発生回路に送り、通常のエネルギー走査が
行われる。走査面積を指定してマッピング動作を制御装
置Cに指示すると、制御装置Cは走査範囲に従ってx偏
向信号,y偏向信号の鋸歯状波の基本値を決め、他方エネ
ルギー分析器Eに印加している電圧つまり選択エネルギ
ー値に比例した係数を上記基本値に掛算して、x方向及
びy方向のディジタル偏向信号をx方向偏向電圧発生回
路Vxおよびy方向偏向電圧発生回路Vyに出力して試料面
の走査を行う。
When the energy of the X-ray photoelectrons to be selected is designated by the keyboard K, the control device C outputs a digital signal corresponding to the energy value to the voltage generating circuit U and applies a predetermined voltage to the energy analyzer E. When the energy scanning instruction is input, the control device C sends a time-varying digital signal to the voltage generating circuit, and normal energy scanning is performed. When the scanning operation is designated and the mapping operation is instructed to the control device C, the control device C determines the basic values of the sawtooth waves of the x deflection signal and the y deflection signal according to the scanning range, and applies them to the energy analyzer E. The basic value is multiplied by a coefficient proportional to the voltage, that is, the selected energy value, and the x-direction and y-direction digital deflection signals are output to the x-direction deflection voltage generation circuit Vx and the y-direction deflection voltage generation circuit Vy to display the sample surface. Scan.

上述実施例ではX線光電子の偏向手段として偏向電極を
用いているが、偏向コイルを用いてもよい。この場合偏
向角はエネルギーの平方根に反比例するから、偏向コイ
ルに流す電流は選択したエネルギーの平方根に比例させ
ればよい。
Although the deflection electrodes are used as the X-ray photoelectron deflection means in the above-described embodiments, a deflection coil may be used. In this case, since the deflection angle is inversely proportional to the square root of energy, the current flowing through the deflection coil may be proportional to the selected square root of energy.

(発明の効果) 本発明によれば、X線光電子のエネルギーを任意に設定
してマッピングを行う場合、エネルギーの如何にかゝわ
らず、測定データは同じ倍率で表示されることになり、
種々なエネルギーのX線光電子像の相互比較が直接的に
行え、分析結果の検討が大へんやり易くなる。
(Effect of the Invention) According to the present invention, when the energy of X-ray photoelectrons is arbitrarily set and mapping is performed, the measured data is displayed at the same magnification regardless of the energy.
The X-ray photoelectron images of various energies can be directly compared with each other, and the examination of the analysis result becomes very easy.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例装置の構成を示す図、第2図
は従来例の構成を示す図である。 X……X線源、S……試料、Px,Py……x方向およびy
方向偏向電極、L……電子レンズ、E……エネルギー分
析器、Is……入射スリット、Io……出射スリット、D…
…電子検出器、U……エネルギー分析器Eに印加する電
圧を発生する電圧発生回路、Vx……x方向偏向電圧発生
回路、Vy……y方向偏向電圧発生回路、C……制御装
置、M……メモリ、B……CRT、K……キーボード。
FIG. 1 is a diagram showing a configuration of an apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing a configuration of a conventional example. X ... X-ray source, S ... sample, Px, Py ... x direction and y
Direction-deflecting electrode, L ... Electron lens, E ... Energy analyzer, Is ... Incident slit, Io ... Exit slit, D ...
... Electron detector, U ... Voltage generation circuit for generating voltage applied to energy analyzer E, Vx ... x direction deflection voltage generation circuit, Vy ... y direction deflection voltage generation circuit, C ... Control device, M ...... Memory, B ... CRT, K ... Keyboard.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】試料面から放射されるX線光電子をエネル
ギー分析するエネルギー分析器と、試料から放射される
電子をエネルギー分析器の入射スリット配置面に収束さ
せて試料面のX線光電子像を形成する電子レンズを備え
たX線光電子分析装置において、試料面から放射される
電子をx,y方向に偏光させる偏向手段を設け、この偏向
手段に印加する偏向信号の振幅を上記エネルギー分析器
に設定した選択エネルギーの値に応じて選択されたエネ
ルギーが大なるときは上記振幅を大ならしめ、エネルギ
ーが小なるときは上記振幅を小ならしめるよう偏向信号
の振幅をエネルギー分析器の選択エネルギー設定と連動
させて変えるようにしたことを特徴とするX線光電子分
析装置。
1. An energy analyzer for energy analysis of X-ray photoelectrons emitted from a sample surface, and an electron emitted from the sample is converged on an entrance slit arrangement surface of the energy analyzer to form an X-ray photoelectron image of the sample surface. In an X-ray photoelectron analyzer having an electron lens to be formed, a deflection means for polarizing electrons emitted from a sample surface in x and y directions is provided, and the amplitude of a deflection signal applied to this deflection means is applied to the energy analyzer. Set the amplitude of the deflection signal to the selected energy of the energy analyzer so that the above amplitude is increased when the energy selected according to the set selected energy value is large and the above amplitude is decreased when the energy is small. An X-ray photoelectron analysis apparatus characterized in that it is changed in conjunction with.
JP63103166A 1988-04-26 1988-04-26 X-ray photoelectron analyzer Expired - Fee Related JPH0797092B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63103166A JPH0797092B2 (en) 1988-04-26 1988-04-26 X-ray photoelectron analyzer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63103166A JPH0797092B2 (en) 1988-04-26 1988-04-26 X-ray photoelectron analyzer

Publications (2)

Publication Number Publication Date
JPH01274050A JPH01274050A (en) 1989-11-01
JPH0797092B2 true JPH0797092B2 (en) 1995-10-18

Family

ID=14346924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63103166A Expired - Fee Related JPH0797092B2 (en) 1988-04-26 1988-04-26 X-ray photoelectron analyzer

Country Status (1)

Country Link
JP (1) JPH0797092B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9437408B2 (en) 2012-03-06 2016-09-06 Scienta Omicron Ab Analyser arrangement for particle spectrometer
JP5815826B2 (en) * 2014-10-07 2015-11-17 ヴィゲー・シエンタ・アーベー Analytical equipment for particle spectrometer

Also Published As

Publication number Publication date
JPH01274050A (en) 1989-11-01

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