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JPH0797550B2 - Spin development method - Google Patents
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JPH0797550B2 - Spin development method - Google Patents

Spin development method

Info

Publication number
JPH0797550B2
JPH0797550B2 JP1125611A JP12561189A JPH0797550B2 JP H0797550 B2 JPH0797550 B2 JP H0797550B2 JP 1125611 A JP1125611 A JP 1125611A JP 12561189 A JP12561189 A JP 12561189A JP H0797550 B2 JPH0797550 B2 JP H0797550B2
Authority
JP
Japan
Prior art keywords
substrate
developer
developing solution
developing
spin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1125611A
Other languages
Japanese (ja)
Other versions
JPH02303116A (en
Inventor
義昭 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1125611A priority Critical patent/JPH0797550B2/en
Publication of JPH02303116A publication Critical patent/JPH02303116A/en
Publication of JPH0797550B2 publication Critical patent/JPH0797550B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、スピン現像方法、特に、大型基板のスピン現
像方法に関する。
TECHNICAL FIELD The present invention relates to a spin developing method, and more particularly to a spin developing method for a large substrate.

〔従来の技術〕[Conventional technology]

従来のスピン現像方法は、基板を所定の回転数一定で回
転しながら現像液を滴下して現像処理を行なう方法が一
般的であった。
The conventional spin developing method is generally a method in which a developing solution is dropped to carry out a developing treatment while the substrate is rotated at a predetermined rotation speed.

第3図は従来の一例を説明するためのタイムチャートで
ある。所定の現像液の滴下開始Aから現像終了しリンス
開始Cまで所定の回転数450rpmにて現像を行なう。
FIG. 3 is a time chart for explaining a conventional example. From the start A of dropping a predetermined developing solution to the end of development and a start C of rinsing, development is performed at a predetermined rotation speed of 450 rpm.

このような従来のスピンの現像方法は、基板1を所定の
回転数一定で回転しながら現像液2を滴下するので、脈
理状に現像液2が流れ基板1の全面に均一に現像液が供
給できず、したがって基板1の全面に均一なパターンが
形成できない。
In such a conventional spin developing method, since the developing solution 2 is dropped while rotating the substrate 1 at a predetermined rotation speed, the developing solution 2 flows in a striae-like manner and the developing solution 2 is evenly distributed over the entire surface of the substrate 1. Therefore, a uniform pattern cannot be formed on the entire surface of the substrate 1.

第4図は、第3図に示すスピン現像方法による基板上の
現像液の流れ方を示す平面図で、脈理状に現像液2が流
れていることが判る。
FIG. 4 is a plan view showing the flow of the developing solution on the substrate by the spin developing method shown in FIG. 3, and it can be seen that the developing solution 2 flows in a striae.

第5図は基板1の半径60mmにおける基板1上の現像液の
流れ面高Hと基板円周位置θとの関係を示すグラフであ
る。
FIG. 5 is a graph showing the relationship between the flow surface height H of the developing solution on the substrate 1 and the substrate circumferential position θ when the substrate 1 has a radius of 60 mm.

このように現像液が脈理状に流れると基板全面に均一に
現像液が供給できず、したがって、基板全面に均一なパ
ターンが形成できない。
If the developing solution flows in a striae like this, the developing solution cannot be uniformly supplied to the entire surface of the substrate, so that a uniform pattern cannot be formed on the entire surface of the substrate.

また、脈理状の現像液2の流れを小さくすることは、回
転数を小さくすることにより可能であるが、この場合基
板1の外周部へは新鮮な現像液2が供給されず、基板1
の内周部と外周部とでパターン形状が異なることになり
やはり基板1の全面に均一なパターンを形成することは
できない。
Further, it is possible to reduce the flow of the striae-like developer 2 by decreasing the number of rotations, but in this case, the fresh developer 2 is not supplied to the outer peripheral portion of the substrate 1 and the substrate 1
Since the inner peripheral portion and the outer peripheral portion have different pattern shapes, it is still impossible to form a uniform pattern on the entire surface of the substrate 1.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

しかしながら、このような上述した従来のスピン現像方
法は、所定濃度の現像液を所定回転数の基板上に滴下し
ているため現像液が脈理状に流れることとなり、均一な
パターンの形成が阻害されるという欠点がある。
However, in the above-described conventional spin developing method as described above, since the developing solution having the predetermined concentration is dropped on the substrate having the predetermined number of rotations, the developing solution flows in a striae, which hinders the formation of a uniform pattern. There is a drawback that is done.

〔課題を解決するための手段〕[Means for Solving the Problems]

本発明のスピン現像方法は、最初基板を比較的低速で回
転しながら比較的低濃度の現像液を滴下し、この現像液
が基板全面に行きわたった後、次に回転数を増し滴下す
る現像液を最初の現像液より標準濃度の現像液に切り換
えるという2段階の現像工程からなり、最初の低濃度の
現像液による処理を加えることにより、次の標準濃度の
現像液が均一に基板上に行きわたり現像が基板全体で均
一に進むように構成される。
In the spin developing method of the present invention, first, a developing solution having a relatively low concentration is dropped while the substrate is rotated at a relatively low speed, the developing solution is spread over the entire surface of the substrate, and then the number of rotations is increased and dropped. It consists of a two-step development process in which the developer is switched from the first developer to a developer with a standard concentration. By adding the treatment with the first low-concentration developer, the developer with the next standard concentration is evenly distributed on the substrate. It is configured so that the development spreads uniformly over the entire substrate.

〔実施例〕〔Example〕

次に、本発明の実施例について、図面を参照して説明す
る。
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例を説明するためのタイムチャ
ートである。
FIG. 1 is a time chart for explaining one embodiment of the present invention.

第1図に示すスピン現像方法において、シプレイ社製フ
ォトレジスト[商品名:MP S1350J]を膜厚1200Åに塗
布した外径220mmのガラス製の基板1を第1の現像工程
では回転数150rpmで回転しながら、シプレイ社製現像液
[商品名:MPデベロッパ]を規定度0.02に希釈した現像
液2を回転中のガラス基板上に滴下する。
In the spin developing method shown in FIG. 1, a glass substrate 1 having an outer diameter of 220 mm and having a film thickness of 1200 Å coated with a photoresist (trade name: MP S1350J) manufactured by Shipley Co. is rotated at a rotation speed of 150 rpm in the first development step. On the other hand, the developer 2 manufactured by Shipley Co., Ltd. [trade name: MP Developer] is diluted to a normality of 0.02, and the developer 2 is dropped on the rotating glass substrate.

10秒経過後、第2の現像工程では、回転数を450rpmに上
げ規定度0.20の現像液2を滴下し、さらに70秒現像を行
なう。
After the lapse of 10 seconds, in the second developing step, the rotation speed is increased to 450 rpm, the developing solution 2 having a normality of 0.20 is dropped, and further development is performed for 70 seconds.

すでに、基板表面は規定度0.02の現像液2でおおわれ、
基板1の表面と現像液2との親和性は著しく増大してい
るので規定度0.2の現像液2を滴下した時の現像液2の
脈理状の流れは極めて小さくなる。
The surface of the substrate has already been covered with developer 2 with normality 0.02,
Since the affinity between the surface of the substrate 1 and the developer 2 is remarkably increased, the striation flow of the developer 2 when the developer 2 having a normality of 0.2 is dropped is extremely small.

第2図は基板1の半径60mmにおける基板1上の現像液2
の液面高Hと基板円周位置θとの関係を示すグラフであ
る。
FIG. 2 shows the developer 2 on the substrate 1 when the radius of the substrate 1 is 60 mm.
5 is a graph showing the relationship between the liquid level height H and the substrate circumferential position θ.

これを第5図に示す従来方法と比べてみると、基板1上
の現像液2の液面高Hの変動が小さくなっていることが
判る。
Comparing this with the conventional method shown in FIG. 5, it can be seen that the fluctuation of the liquid level height H of the developer 2 on the substrate 1 is small.

したがって、基板1の全面に均一に現像液2が供給され
るので基板1の全面に均一なパターンが形成できる。
Therefore, since the developing solution 2 is uniformly supplied to the entire surface of the substrate 1, a uniform pattern can be formed on the entire surface of the substrate 1.

〔発明の効果〕〔The invention's effect〕

本発明のスピン現像方法は、基板を所定の回転数より小
さい第1の回転数で回転しながら、低濃度の現像液を滴
下し、基板表面と現像液との親和性を上げてから回転数
を所定の第2の回転数に上げ所定濃度の現像液を滴下し
現像することにより現像液が脈理上に流れ難くできるた
め、基板全面に均一に現像液が供給できるので、基板全
面に均一なパターンが形成できるという効果がある。
In the spin developing method of the present invention, while rotating the substrate at a first rotation speed lower than a predetermined rotation speed, a low-concentration developer is dropped to increase the affinity between the substrate surface and the developer, and then the rotation speed. Is increased to a predetermined second number of revolutions and a developing solution having a predetermined concentration is dropped to develop, so that the developing solution can be less likely to flow in a striae, so that the developing solution can be uniformly supplied to the entire surface of the substrate, so that the entire surface of the substrate is uniformly distributed. There is an effect that various patterns can be formed.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例を説明するためのタイムチャ
ート、第2図は第1図に示す実施例における基板円周位
置と現像液の液面高との関係を示すグラフ、第3図は従
来の一例を説明するためのタイムチャート、第4図は第
3図に示す従来例における基板上の現像液の流れ方を説
明するための平面図、第5図は第3図に示す従来例にお
ける基板円周位置と現像液の液面高との関係を示すグラ
フである。 1……基板、2……現像液、A,A′,B……滴下開始、C,
C′……リンス開始、t……現像時間、H……液面高、
θ……基板円周位置。
FIG. 1 is a time chart for explaining an embodiment of the present invention, FIG. 2 is a graph showing the relationship between the circumferential position of the substrate and the liquid level of the developing solution in the embodiment shown in FIG. 1, and FIG. FIG. 4 is a time chart for explaining an example of the conventional art, FIG. 4 is a plan view for explaining the flow of the developing solution on the substrate in the conventional example shown in FIG. 3, and FIG. 5 is shown in FIG. 7 is a graph showing the relationship between the circumferential position of the substrate and the liquid surface height of the developer in the conventional example. 1 ... Substrate, 2 ... Developer, A, A ', B ... Drip start, C,
C '... start of rinsing, t ... development time, H ... level of liquid,
θ: Circumferential position of substrate.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】少なくとも一つの主面を有する基板を標準
速度より低速の第1の回転数で回転しながら標準濃度よ
り低濃度の第1の現像液を前記主面上に滴下する第1の
現像工程と、前記基板を前記標準速度である第2の回転
数で回転しながら前記主面上に前記標準濃度の第2の現
像液を滴下する第2に現像工程とを含むことを特徴とす
るスピン現像方法。
1. A first developing solution having a concentration lower than a standard concentration is dropped onto the principal surface while rotating a substrate having at least one principal surface at a first rotation speed lower than a standard speed. A developing step and a second developing step of dropping the second developing solution having the standard concentration on the main surface while rotating the substrate at the second rotation speed which is the standard speed. Spin developing method.
JP1125611A 1989-05-18 1989-05-18 Spin development method Expired - Lifetime JPH0797550B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1125611A JPH0797550B2 (en) 1989-05-18 1989-05-18 Spin development method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1125611A JPH0797550B2 (en) 1989-05-18 1989-05-18 Spin development method

Publications (2)

Publication Number Publication Date
JPH02303116A JPH02303116A (en) 1990-12-17
JPH0797550B2 true JPH0797550B2 (en) 1995-10-18

Family

ID=14914383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1125611A Expired - Lifetime JPH0797550B2 (en) 1989-05-18 1989-05-18 Spin development method

Country Status (1)

Country Link
JP (1) JPH0797550B2 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5639540A (en) * 1979-09-07 1981-04-15 Matsushita Electric Ind Co Ltd Photosensitive resin developing method
JPS56144443A (en) * 1980-04-12 1981-11-10 Victor Co Of Japan Ltd Developing method
JPS57198457A (en) * 1981-06-01 1982-12-06 Nec Corp Developing method for photoresist
JPS584144A (en) * 1981-06-30 1983-01-11 Fujitsu Ltd Developing method for resist
JPS6384027A (en) * 1986-09-29 1988-04-14 Toshiba Corp Method and apparatus for developing resist
JPS63216053A (en) * 1987-03-05 1988-09-08 Nippon Columbia Co Ltd Recording information developing device

Also Published As

Publication number Publication date
JPH02303116A (en) 1990-12-17

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