JPH0797685B2 - Crystal for solid-state laser - Google Patents
Crystal for solid-state laserInfo
- Publication number
- JPH0797685B2 JPH0797685B2 JP62240096A JP24009687A JPH0797685B2 JP H0797685 B2 JPH0797685 B2 JP H0797685B2 JP 62240096 A JP62240096 A JP 62240096A JP 24009687 A JP24009687 A JP 24009687A JP H0797685 B2 JPH0797685 B2 JP H0797685B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- laser
- solid
- state laser
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 28
- 239000000203 mixture Substances 0.000 claims description 5
- 239000002223 garnet Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 239000000843 powder Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は固体レーザ用酸化物単結晶材料に関する。TECHNICAL FIELD The present invention relates to an oxide single crystal material for a solid-state laser.
（従来の技術） 波長３μｍ近傍のレーザ光を得るためのレーザ用結晶と
しては従来エルビウムを添加したイットリウムアルミニ
ウムガーネットEr:Y3Al5O12（以下Er:YAGと略記する）
が用いられていた（λ＝2,96μｍ）。Er:YAG単結晶は通
常引上法により製造されるが、結晶の中心部にコアとよ
ばれる屈折率不均一部分を生じやすく大型のレーザロッ
ドを製作することが困難であった。(Prior art) Yttrium aluminum garnet Er: Y 3 Al 5 O 12 (hereinafter abbreviated as Er: YAG) to which erbium has been added is conventionally used as a laser crystal for obtaining a laser beam having a wavelength near 3 μm.
Was used (λ = 2,96 μm). The Er: YAG single crystal is usually manufactured by the pulling method, but it is difficult to manufacture a large-sized laser rod because a portion called a core having a non-uniform refractive index is likely to occur in the center of the crystal.
（発明が解決しようとする問題点） 本発明はErを含むレーザ結晶であって、育成結晶にコア
を生じないもので、できるだけ効率のよい結晶体を見出
すためになされたものである。(Problems to be Solved by the Invention) The present invention is a laser crystal containing Er, which does not form a core in a grown crystal, and was made in order to find a crystal body as efficient as possible.
（問題を解決するための手段） 固体レーザ用結晶でコアを含まないもの、つまり結晶育
成時の固液界面の形状を平坦にしたままで良質結晶の育
成が可能なものの代表としてはNdを含むガドリニウムガ
リウムガーネット、Nd:Gd3Ga5O12（以下Nd:GGGと略記）
単結晶があるが、このGGG結晶はYAG結晶に比べ、光吸収
損失が大きく、またレーザ動作時の励起光により着色中
心を新たに生成し、吸収損失を増大させ、またレーザ素
子の温度を上昇させレーザ性能を阻害する欠点があっ
た。本発明は、コアフリー育成が可能である利点を継承
するためGGGのガーネット構造を基本とし、この構成成
分元素を変化させることで上記欠点を解決した。具体的
にはGGGの構成元素のうちのGaの一部をAlに置換するこ
とにより目的を達した。また発振効率を向上させるため
増感剤としてCrを添加した。(Means for solving the problem) Nd is included as a typical solid-state laser crystal that does not include a core, that is, a crystal that can grow a good quality crystal while keeping the solid-liquid interface flat during crystal growth. Gadolinium gallium garnet, Nd: Gd 3 Ga 5 O 12 (hereinafter abbreviated as Nd: GGG)
There is a single crystal, but this GGG crystal has a larger optical absorption loss than the YAG crystal, and it also increases the absorption loss by newly generating colored centers by the excitation light during laser operation, and also raises the temperature of the laser element. However, there is a drawback that the laser performance is hindered. The present invention solves the above-mentioned drawbacks by changing the constituent elements based on the garnet structure of GGG in order to inherit the advantage that core-free growth is possible. Specifically, the object was achieved by substituting a part of Ga of the constituent elements of GGG with Al. In addition, Cr was added as a sensitizer to improve oscillation efficiency.
すなわち、Gd3-xErxGa5-y-zAlyCrzO12なる単結晶体にお
いて0.03≦ｘ≦2,0.05≦ｙ≦2.5,0.001≦ｚ≦0.01なる
組成である。That is, 0.03 ≦ x ≦ 2,0.05 ≦ y ≦ 2.5,0.001 ≦ z ≦ 0.01 a composition in Gd 3-x E rx Ga 5 -y- zAlyCrzO 12 comprising single crystal.
（作用） 本発明者は多くの実験から、GGG結晶のGaの一部をAlで
置換したもの、つまりGd3-xErxGa5-y-zCrzO12で表わせ
る化学式において、2.5≧ｙ≧0.05の場合に光吸収損失
が少なく、かつ励起光による新たな着色中心の発生が極
めて少ない、実用寸法の良質単結晶が得られることを見
出した。この場合ｙ値の下限は着色に関しての有効性が
認められる最小含有率として、上限は良好な結晶性を維
持する最大含有率として決定されたものである。また活
性元素のErは実用的に出力をとり出すためにはｘ≧0.03
が必要でありまた、良好な結晶を得るためにはｘ≦２で
ある必要がある。従ってErの有効組成範囲は0.03≦ｘ≦
２である。増感剤のCrはｚ≦0.001では有効性が確認で
きず、またｚ≧0.01ではかえってレーザ出力を低下させ
ることが実験の結果明らかとなったので有効組成範囲は
0.001≦ｚ≦0.01ということが出来る。(Operation) The present inventors from many experiments, those portions of the Ga of the GGG crystal was replaced with Al, in other words Gd 3-x E rx Ga 5 -y- zCrzO 12 in expressed Formula, 2.5 ≧ y ≧ It has been found that when the value is 0.05, a good-quality single crystal having a practical size in which the light absorption loss is small and the generation of new coloring centers due to excitation light is extremely small can be obtained. In this case, the lower limit of the y value is determined as the minimum content rate at which the effectiveness in coloring is recognized, and the upper limit is determined as the maximum content rate at which good crystallinity is maintained. Moreover, Er of the active element is x ≧ 0.03 in order to practically obtain the output.
Is necessary, and x ≦ 2 is required to obtain good crystals. Therefore, the effective composition range of Er is 0.03 ≦ x ≦
It is 2. As a result of the experiment, it was found that the effectiveness of Cr as a sensitizer cannot be confirmed when z ≦ 0.001 and the laser output is rather decreased when z ≧ 0.01.
It can be said that 0.001 ≦ z ≦ 0.01.
（実施例） 高周波誘導加熱引上法により本発明の単結晶の育成実験
を行なった。使用るつぼは内径50mm、深さ50mm、板厚1.
5mmでジルコニア耐火物で保温した。原料はGd2O3粉末18
4.8g、Er2O3粉末97.3g、Gd2O3粉末190.9g、Al2O3粉末2
5.9g、Cr2O3粉末0.97gとした。原料組成としてｘ＝１、
ｙ＝１、ｚ＝0.05である。結晶育成は酸素１パーセント
を含む窒素中で行なった。最初の育成では種子結晶がな
いため、イリジウム線を種子結晶のかわりに用い、引上
った固化物より＜111＞方位の種子結晶を切出し使用し
た。引上速度は毎時1.5mm、種子結晶回転数50回転とし
た。育成された結晶は直径約20mm、長さ約80mmのコアフ
リー結晶で、これより直径5mm、長さ65mmのレーザロッ
ドを製作し、両端面にλ＝2.96μｍ近傍での無反射コー
ディングを施こし、キセノンフラッシュランプ励起レー
ザヘッドに装着して発振テストを行ったところ、ランプ
入力200ジュールに対し出力200ミリジュールを得た。な
おこれはCrを全く含まないものの約1.2倍の出力値であ
る。(Example) A single crystal growth experiment of the present invention was conducted by the high frequency induction heating pulling method. The crucible used has an inner diameter of 50 mm, a depth of 50 mm, and a plate thickness of 1.
Insulated with zirconia refractory at 5 mm. Raw material is Gd 2 O 3 powder 18
4.8g, Er 2 O 3 powder 97.3g, Gd 2 O 3 powder 190.9g, Al 2 O 3 powder 2
The amount was 5.9 g and the Cr 2 O 3 powder was 0.97 g. X = 1 as the raw material composition,
y = 1 and z = 0.05. Crystal growth was carried out in nitrogen containing 1% oxygen. Since there is no seed crystal in the initial growth, an iridium wire was used instead of the seed crystal, and a seed crystal having a <111> orientation was cut out from the pulled-up solidified product and used. The pulling speed was 1.5 mm / hour, and the seed crystal rotation speed was 50 rotations. The grown crystal is a core-free crystal with a diameter of about 20 mm and a length of about 80 mm. From this, a laser rod with a diameter of 5 mm and a length of 65 mm was manufactured, and both ends were antireflection coated in the vicinity of λ = 2.96 μm. When mounted on a xenon flash lamp pumped laser head and subjected to an oscillation test, an output of 200 millijoules was obtained for a lamp input of 200 joules. It should be noted that this is an output value that is about 1.2 times as large as that containing no Cr.
（発明の効果） 本発明によれば大型でしかも光吸収損失が比較的少ない
エルビウムレーザ（発振波長約３μｍ）ロッドの製作が
可能であり、また、スラブ型レーザ素子の製作も容易で
ある。(Effect of the Invention) According to the present invention, it is possible to manufacture a large erbium laser (oscillation wavelength of about 3 μm) rod with relatively small light absorption loss, and it is also easy to manufacture a slab type laser element.
Claims (1)
で示されるガーネット構造の単結晶体であって、0.03≦
ｘ≦２かつ0.05≦ｙ≦2.5 0.001≦ｚ≦0.01なる組成範
囲を特徴とする固体レーザ用組成物。1. A single crystal of Gd 3-x E rx Ga 5 -y- zAlyCrzO 12 becomes garnet structure represented by the chemical formula, 0.03 ≦
A composition for a solid-state laser characterized by a composition range of x ≦ 2 and 0.05 ≦ y ≦ 2.5 0.001 ≦ z ≦ 0.01.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240096A JPH0797685B2 (en) | 1987-09-24 | 1987-09-24 | Crystal for solid-state laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240096A JPH0797685B2 (en) | 1987-09-24 | 1987-09-24 | Crystal for solid-state laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6481377A JPS6481377A (en) | 1989-03-27 |
| JPH0797685B2 true JPH0797685B2 (en) | 1995-10-18 |
Family
ID=17054431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62240096A Expired - Lifetime JPH0797685B2 (en) | 1987-09-24 | 1987-09-24 | Crystal for solid-state laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0797685B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020027982A (en) * | 2000-10-06 | 2002-04-15 | 밍 루 | Steering device for vehicle |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0120141A1 (en) * | 1983-02-22 | 1984-10-03 | Allied Corporation | CR-doped gadolinium gallium garnet laser |
| JPS61111996A (en) * | 1984-11-07 | 1986-05-30 | Natl Res Inst For Metals | Rare earth garnet single crystal and method for producing the same |
-
1987
- 1987-09-24 JP JP62240096A patent/JPH0797685B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6481377A (en) | 1989-03-27 |
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