JPH0799779B2 - Optical sensor - Google Patents
Optical sensorInfo
- Publication number
- JPH0799779B2 JPH0799779B2 JP60155701A JP15570185A JPH0799779B2 JP H0799779 B2 JPH0799779 B2 JP H0799779B2 JP 60155701 A JP60155701 A JP 60155701A JP 15570185 A JP15570185 A JP 15570185A JP H0799779 B2 JPH0799779 B2 JP H0799779B2
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- electrode film
- semiconductor
- insulating layer
- optical sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- LQJIDIOGYJAQMF-UHFFFAOYSA-N lambda2-silanylidenetin Chemical compound [Si].[Sn] LQJIDIOGYJAQMF-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明は光を電気信号として検出する半導体光活性層を
有効受光領域のほぼ全域に亘って分散配置された光セン
サに関する。The present invention relates to a photosensor in which a semiconductor photoactive layer for detecting light as an electric signal is dispersed and arranged over almost the entire effective light receiving region.
（ロ）従来の技術 可視光や赤外光をはじめとする光を電気信号に変換し、
その光量に応じた電気信号を得る光センサが多く開発さ
れている。特に、可視光領域に感度を持つアモルフアス
シリコン系半導体をその受光素子として用いた光センサ
は、ガラス基板上に形成が可能で、大面積化、低価格化
及び製造工程の簡略化が図れ、更にはその製造工程に於
いて例えばフオトリングラフイ手法を用いることによっ
て任意のパターンに微細加工ができるなどの利点があ
り、その応用分野も広まっている。その一例として特開
昭57-167002号公報や特公昭58-14073号公報に開示され
た如くカメラ等の自動焦点検出素子やフアクシリミリ等
の原稿読み取り装置が存在する。(B) Conventional technology Converts light including visible light and infrared light into electrical signals,
Many optical sensors have been developed to obtain an electric signal according to the amount of light. In particular, an optical sensor using an amorphous silicon semiconductor that has sensitivity in the visible light region as its light receiving element can be formed on a glass substrate, and it is possible to increase the area, reduce the cost, and simplify the manufacturing process. Further, in the manufacturing process, there is an advantage that fine processing can be performed on an arbitrary pattern by using, for example, the photolithography method, and its application field is widespread. As an example thereof, there is an automatic focus detection element such as a camera or a document reading device such as a facsimile machine as disclosed in JP-A-57-167002 and JP-B-58-14073.
一方、本願出願人は昭和60年６月27日付の特許願に於い
て複数の受光素子を離間して分散配置し、斯る受光素子
を受光すべき光の光路に介在させても、受光動作に必要
な光のみを受光し、他の光は背面側に透過する透過型の
光センサを特許出願するに及んでいる。On the other hand, the applicant of the present application, in the patent application dated June 27, 1985, disposes a plurality of light receiving elements in a dispersed manner, and even if such light receiving elements are interposed in the optical path of light to be received, the light receiving operation is performed. Has applied for a patent for a transmissive optical sensor that receives only the light necessary for the above and transmits the other light to the back side.
第９図乃至第11図は斯る透過型の光センサを示してお
り、透光性絶縁基板（１）の一方の主面（1a）に、受光
面電極（12）、半導体光活性層（13）及び背面電極（1
4）をこの順序で積層した受光素子（LS）（LS）…が、
有効受光領域のほぼ全域に亘って離間して分散配置さ
れ、それら受光素子（LS）（LS）…はＸ軸方向及びＹ軸
方向にマトリックス状に配線された導電パターン（12
X）（12Y）を介して電気的に並列接続されている。従っ
て、受光素子（LS）（LS）…は有効受光領域に分散配置
されていると難も、導電パターン（12X）（12Y）を介し
て電気的に並列接続されているために、透過型の光セン
サであるにも拘ず有効受光領域の全域から平均した光電
出力が得られることとなる。9 to 11 show such a transmissive optical sensor, in which a light receiving surface electrode (12), a semiconductor photoactive layer (a) are formed on one main surface (1a) of a translucent insulating substrate (1). 13) and back electrode (1
Light-receiving element (LS) (LS) ...
The light receiving elements (LS) (LS) are arranged in a dispersed manner over almost the entire effective light receiving area, and the light receiving elements (LS) (LS) ... Are arranged in a matrix in the X axis direction and the Y axis direction to form a conductive pattern (12
X) (12Y) and electrically connected in parallel. Therefore, it is difficult for the light receiving elements (LS) (LS) ... to be dispersedly arranged in the effective light receiving area, but since they are electrically connected in parallel through the conductive patterns (12X) (12Y), the transmission type Despite being an optical sensor, an average photoelectric output can be obtained from the entire effective light receiving area.
この様に複数の受光素子（LS）（LS）…を分散配置せし
める場合、夫々の構成膜のパターニングに、フオトリソ
グラフイ手法が利用されるが、斯るフオトリソグラフイ
手法はフオトレジストの塗布、プリベーク、フオトマス
クの目合わせ（マスクアライメント）、露光、現像、ポ
ストベータ、エツチング及びフオトレジストの除去等と
云った一連の工程を経なければならず、作業工程は煩雑
となる。更に上述の如く透過型の光センサにあっては、
有効受光領域に於ける受光素子（LS）（LS）…の占める
割合が多くなると、光透過率の減小を招くために、微小
面積の受光素子（LS）（LS）…を有効受光領域に多数分
散配置することが望まれる反面、パターンが微細になれ
ば受光面電極（12）やＹ軸方向の導電パターン（12Y）
と逆極性の背面電極（14）やＸ軸方向の導電パターン
（12X）とが電気的に短絡する危惧を生じる。When a plurality of light receiving elements (LS) (LS) are arranged in a distributed manner as described above, a photolithographic method is used for patterning each constituent film. Such a photolithographic method is applied by applying a photoresist, A series of steps such as pre-baking, photomask alignment (mask alignment), exposure, development, post beta, etching, and photoresist removal must be performed, and the working steps become complicated. Furthermore, in the transmission type optical sensor as described above,
When the ratio of the light receiving elements (LS) (LS) ... in the effective light receiving area increases, the light transmittance decreases, so that the light receiving elements (LS) (LS) .. While it is desirable to arrange a large number of dispersed elements, if the pattern becomes fine, the light-receiving surface electrode (12) and the conductive pattern (12Y) in the Y-axis direction
There is a risk of electrical short circuit between the back electrode (14) of opposite polarity and the conductive pattern (12X) in the X-axis direction.
（ハ）発明が解決しようとする問題点 本発明は上述の如く有効受光領域の受光部にある多数個
の半導体光活性層を分散配置せしめた光センサに於ける
パターニングの煩雑化や、パターンの微細化に伴なう極
性の異なる電極同士の短絡等の問題点を解決しようとす
るものである。(C) Problems to be Solved by the Invention As described above, the present invention complicates patterning in a photosensor in which a large number of semiconductor photoactive layers in the light receiving portion of the effective light receiving region are dispersed and arranges the pattern. It is intended to solve a problem such as a short circuit between electrodes having different polarities due to miniaturization.
（ニ）問題点を解決するための手段 本発明は上記問題点を解決するために、透光性絶縁基
板、該絶縁基板の有効受光領域の受光部に亘って一様に
形成された透光性の第１電極膜、該第１電極膜上に離間
して分離配置された多数個の半導体光活性層、これら半
導体光活性層相互間を埋設する、該光活性層から露出し
た第１電極膜を覆う絶縁層、該絶縁層及び該絶縁層のコ
ンタクトホールを介して露出した上記光活性層上を含
む、少なくとも上記受光部のほぼ全域に亘って一様に形
成された第２電極膜とからなる光センサであって、上記
第１電極膜と上記第２電極膜とは、分散配置された半導
体光活性層を並列接続すると共に、該光活性層から露出
した第１電極膜は上記受光部のほぼ全域に亘り、上記絶
縁層を介して上記第２電極膜と対向する構成としたこと
にある。(D) Means for Solving the Problems In order to solve the above problems, the present invention provides a translucent insulating substrate and a translucent light uniformly formed over a light receiving portion of an effective light receiving region of the insulating substrate. Conductive first electrode film, a large number of semiconductor photoactive layers separated and arranged on the first electrode film, and a first electrode exposed between the semiconductor photoactive layers, which is buried between the semiconductor photoactive layers. A second electrode film formed uniformly over at least substantially the entire area of the light receiving portion, including an insulating layer covering the film, the insulating layer, and the photoactive layer exposed through a contact hole of the insulating layer; The first electrode film and the second electrode film are formed by connecting in parallel the semiconductor photoactive layers that are dispersed, and the first electrode film exposed from the photoactive layer is the light receiving layer. The structure facing the second electrode film with the insulating layer interposed therebetween over almost the entire area. It has been done.
（ホ）作用 上述の如く第１電極膜及び第２電極膜を微細にパターニ
ングすることなく半導体光活性層のみを複数に離間して
分散配置せしめることによって、パターニングのための
煩雑な工程が減少すると共に、上記半導体光活性層が存
在しない有効受光領域にあっては、第１電極膜と第２電
極膜との間に配挿される絶縁層は上記両電極膜の短絡を
防止する。(E) Action As described above, by only finely patterning the first electrode film and the second electrode film and dispersively disposing only the semiconductor photoactive layer in a plurality, the complicated steps for patterning are reduced. At the same time, in the effective light receiving region where the semiconductor photoactive layer does not exist, the insulating layer disposed between the first electrode film and the second electrode film prevents short circuit between the both electrode films.
（ヘ）実施例 第１図は本発明光センサの一実施例を分解して示す分解
斜視図、第２図はその要部拡大断面図であって、（１）
はガラス、透明プラスチツク等の平坦な両主面（1a）
（1b）を持つ透光性絶縁基板、（2a）〜（2e）は上記絶
縁基板（１）の一方の主面（1a）に於ける有効受光領域
に５分割した受光部（Ａ）〜（Ｅ）を形成すべく各受光
部（Ａ）〜（Ｅ）毎にその全域に亘って一様に配置され
た酸化スズ（SnO2）、酸化インジウムスズ（ITQ）に代
表される透光性導電酸化物（TCQ）からなる第１電極
膜、（３）（３）…は上記５分割された第１電極膜（2
a）〜（2e）上の各々に離間して分散配置された半導体
光活性層、（４）は上記光活性層（３）（３）…から露
出した第１電極膜（2a）〜（2e）の露出部分を覆うと共
に上記光活性層（３）（３）…の背面をコンタクトホー
ル（５）（５）…を貫通して露出せしめる透光性の絶縁
層、（６）は上記絶縁層（４）及びコンタクトホール
（５）（５）…から露出した半導体光活性層（３）
（３）…の各々の背面を覆うTCOからなる第２電極膜
で、有効受光領域に於ける５分割された各受光部（Ａ）
〜（Ｅ）に於いて上記第１電極膜（2a）〜（2e）、半導
体光活性層（３）（３）…及び第２電極膜（６）の積層
体により微細な半導体受光素子（LS）（LS）…が分散し
て形成され、これにより各受光部では、夫々の受光部内
に分散配置された多数個の半導体光活性層（３）（３）
…を第１電極膜（2a）〜（2e）と第２電極膜（６）とで
並列接続することとなり、また光活性層から露出した第
１電極膜は、その受光部内のほぼ全域に亘って、上記半
導体光活性層相互間を埋設するように形成された、絶縁
層（４）を介して第２電極膜（６）と対向することとな
る。上記半導体光活性層（３）（３）…は例えばシラン
（SiH4）、四弗化シリコン（SiF4）等のシリコン化合物
を原料ガスとするプラズマCVD法や光CVD法により得られ
るアモルフアスシリコン、アモルフアスシリコンカーパ
イド、アモルフアスシリコンスズ、アモルフアスシリコ
ンゲルマニウム等のアモルフアスシリコン系半導体から
なり、その膜面に平行なPin接合或いはPn接合等の半導
体接合を備える場合、透光性の絶縁基板（１）及び第１
電極膜（2a）〜（2e）を介して光照射があると光起電力
が発生し、また上述の如き半導体接合を持たないものに
あっては光照射により抵抗値が大幅に減少する光導電性
を呈する。(F) Embodiment FIG. 1 is an exploded perspective view showing one embodiment of the optical sensor of the present invention in an exploded manner, and FIG.
Is a flat main surface such as glass or transparent plastic (1a)
A transparent insulating substrate having (1b), (2a) to (2e) are light receiving parts (A) to (5) divided into five effective light receiving regions on one main surface (1a) of the insulating substrate (1). The light-transmitting conductive materials represented by tin oxide (SnO 2 ) and indium tin oxide (ITQ), which are uniformly arranged over the entire area of each of the light receiving portions (A) to (E) to form E). The first electrode film made of oxide (TCQ), (3), (3), ...
a) to (2e), and semiconductor photoactive layers spaced apart from each other, (4) are first electrode films (2a) to (2e) exposed from the photoactive layers (3), (3), ... A transparent insulating layer for covering the exposed portion of the photoactive layer and exposing the back surface of the photoactive layer (3) (3) ... through the contact holes (5), (5). (4) and the semiconductor photoactive layer (3) exposed from the contact holes (5), (5) ...
(3) A second electrode film made of TCO covering the back surface of each of the light receiving portions (A) divided into five in the effective light receiving area.
(E) to (E), the first electrode films (2a) to (2e), the semiconductor photoactive layers (3) (3) ... And the second electrode film (6) are laminated to form a fine semiconductor light receiving element (LS). ) (LS) ... are formed in a dispersed manner, so that in each light receiving portion, a large number of semiconductor photoactive layers (3) (3) distributed and arranged in each light receiving portion.
Are connected in parallel with the first electrode films (2a) to (2e) and the second electrode film (6), and the first electrode film exposed from the photoactive layer covers almost the entire area within the light receiving portion. Then, it opposes the second electrode film (6) through the insulating layer (4) formed so as to fill the space between the semiconductor photoactive layers. The semiconductor photoactive layers (3) (3) ... Are amorphous silicon obtained by plasma CVD method or photo CVD method using a silicon compound such as silane (SiH 4 ) or silicon tetrafluoride (SiF 4 ) as a source gas. , Amorphous Silicon Carbide, Amorphous Silicon Tin, Amorphous Silicon Germanium, or other amorphous silicon based semiconductors, and a semiconductor junction such as a Pin junction or Pn junction parallel to the film surface, if it has translucent insulation Substrate (1) and first
Photoconductivity is generated when light is radiated through the electrode films (2a) to (2e), and in the case of those without a semiconductor junction as described above, the resistance value is greatly reduced by light irradiation. Exhibit sex.
（７）は上記半導体受光素子（LS）（LS）…の背面側を
その有効受光面面積内に於いて保護する透孔性且つ絶縁
性の平坦な保護板で、該保護板（７）は上記絶縁基板
（１）の一方の主面（1a）を覆うものの該絶縁基板
（１）の一方の主面（1a）に配線され有効受光面積より
外に延在した第１電極膜（2a）〜（2e）及び第２電極膜
（６）の各端子部（2at）（2et）、（6t）を露出せしめ
た状態で第２図に示す如く透明接着剤（11）を介して絶
縁基板（１）に対して平行に接着固定されている。（8
a）〜（8e）、（９）は上記保護板（７）から露出した
上記第１電極（2a）〜（2e）及び第２電極膜（６）の各
端子部（2at）〜（2et）、（6t）と結合し半導体受光素
子（LS）（LS）…の光電出力を導出するリード体で、該
リード体（8a）〜（8e）、（９）の上記結合部は結合後
第２図の如く樹脂（10）により封止されている。(7) is a flat protective plate having a through hole and an insulating property that protects the back surface side of the semiconductor light receiving elements (LS) (LS) ... within the effective light receiving surface area, and the protective plate (7) is A first electrode film (2a) which covers one main surface (1a) of the insulating substrate (1) but is wired on one main surface (1a) of the insulating substrate (1) and extends outside the effective light receiving area. ~ (2e) and the respective terminal portions (2at) (2et), (6t) of the second electrode film (6) are exposed, and an insulating substrate (11) is interposed via a transparent adhesive (11) as shown in FIG. It is adhesively fixed parallel to 1). (8
a) to (8e) and (9) are the terminal portions (2at) to (2et) of the first electrodes (2a) to (2e) and the second electrode film (6) exposed from the protective plate (7). , (6t) and lead out the photoelectric output of the semiconductor light receiving elements (LS) (LS) .. The lead parts (8a) to (8e), (9) are connected to each other by the second connecting part. As shown in the figure, it is sealed with resin (10).
次に、斯る構造の光センサの製造方法に於ける好ましい
実施例を第３図乃至第８図を参照してその主要部分につ
いて説明を加える。Next, a preferred embodiment of the method of manufacturing the optical sensor having such a structure will be described with reference to FIGS. 3 to 8.
先ず、絶縁基板（１）の一方の主面（1a）に、第１図に
於いて１点鎖点で囲まれた有効受光領域及び各端子部
（2at）〜（2et）を含む第１電極膜（２）の配線パター
ン予定箇所のみを露出せしめたハードマスクを介して、
TCOの第１電極膜を露出面全域に亘って一様に形成し、
次いで斯る第１電極膜にレーザビームを照射して照射し
た部分の第１電極膜を除去して各受光部（Ａ）〜（Ｅ）
毎に一様に５分割された第１電極膜（2a）〜（2e）及び
有効受光領域の外まで延在したそれらの各端子部（2a
t）〜（2et）をパターニングする。First, on one main surface (1a) of an insulating substrate (1), a first electrode including an effective light receiving region surrounded by a chain line in FIG. 1 and terminal portions (2at) to (2et) Through a hard mask that exposes only the planned wiring pattern of the film (2),
The first electrode film of TCO is formed uniformly over the entire exposed surface,
Then, the first electrode film is irradiated with a laser beam to remove the irradiated portion of the first electrode film to remove the light receiving portions (A) to (E).
First electrode films (2a) to (2e), which are uniformly divided into five parts, and their respective terminal portions (2a) extending to the outside of the effective light receiving region.
t) to (2et) are patterned.
続いて、上記第１電極膜（2a）〜（2e）の各分割パター
ン上全面を覆う如く第３図のようにアモルフアスシリコ
ン系の半導体光活性層（３）が周知のSiH4，Si2H6，SiF
4，SiH3F等のシリコン化合物ガスを原料ガスとするプラ
ズマCVD法や光CVD法等により形成され、次いで第４図の
如く斯る全面に形成された半導体光活性層（３）がフオ
トリングラフイ手法により例えば100μｍ×100μｍ以下
の微細形状に、受光部（Ａ）〜（Ｅ）に対する占有率が
10％以下になるべく夫々の光活性層（３）（３）…が離
間して分散配置される。上記光活性層（３）（３）…
は、その形成過程に於いてＰ型不純物を含むB2H6やｎ型
不純物を含むPH3を適宜添加することによってその腹面
に平行なpin接合或いはpn接合等の半導体接合が形成さ
れる。Subsequently, the first electrode film (2a) ~ Amorufu Ass silicon semiconductor photoactive layer as in the third view as to cover the divided pattern on the entire surface of (2e) (3) is well known SiH 4, Si 2 H 6 , SiF
4 , a semiconductor photoactive layer (3) formed on the entire surface by a plasma CVD method or a photo CVD method using a silicon compound gas such as SiH 3 F as a raw material gas, and then formed on the entire surface as shown in FIG. According to the graphic method, for example, in a fine shape of 100 μm × 100 μm or less, the occupancy rate for the light receiving portions (A) to (E) is
The photoactive layers (3), (3), ... Are spaced apart from each other as much as 10% or less. The photoactive layers (3) (3) ...
In the formation process, a semiconductor junction such as a pin junction or a pn junction parallel to the antinode is formed by appropriately adding B 2 H 6 containing a P-type impurity and PH 3 containing an n-type impurity in the formation process.
第５図の工程は絶縁層（４）が第１電極膜（2a）〜（2
e）及び上記分散配置された半導体光活性層（３）
（３）…を含んで透光性を呈する例えばミクロンのオー
ダで、或いはそれ以下に塗布される。塗布される絶縁層
（４）の好適な実施例にあっては、それ自体が露光され
た部分が残留するネガ型の感光性を持つ樹脂からなり、
第６図の如く絶縁基板（１）の受光素子（LS）（LS）…
が設けられていない他方の主面（1b）から紫外光（UV）
を照射すればフオトマスクを使用しないにも拘らず半導
体光活性層（３）（３）…の背面のみは遮光される結
果、斯る感光性の絶縁層（４）を現像すれば上記半導体
光活性層（３）（３）…の背面のみが除去され、コンタ
クトホール（５）（５）…が形成される（第７図）。In the process shown in FIG. 5, the insulating layer (4) is the first electrode film (2a) to (2
e) and the above-mentioned dispersedly arranged semiconductor photoactive layer (3)
(3) It is applied on the order of, for example, micron or less, which exhibits translucency including ... In a preferred embodiment of the applied insulating layer (4), it consists of a negative photosensitive resin which leaves itself exposed parts.
As shown in Fig. 6, the light receiving element (LS) (LS) of the insulating substrate (1) ...
UV light from the other main surface (1b) that is not provided with
Irradiating the surface of the semiconductor photoactive layer (3) (3), the light is shielded even though the photomask is not used. Therefore, if the photosensitive insulating layer (4) is developed, the semiconductor photoactive layer Only the back surface of the layers (3) (3) ... Is removed to form the contact holes (5) (5) ... (FIG. 7).
この様に絶縁層（４）として露光された部分のみが残留
するネガ型の感光性樹脂を使用すれば、半導体光活性層
（３）（３）…がフオトマスクとして作用するので、マ
スクアライメント等が不要となるばかりかフオトレジス
トも使用しなくても良く作業の簡便化が図れる。ただ、
絶縁層（４）として感光性樹脂を使用しないもの、例え
ばSiO2，Si3N4，ポリイミド樹脂等を使用した場合に
は、フオトレジストを使用する必要はあるものの、紫外
光（UV）の照射方向を同様に絶縁基板（１）の他方の主
面（1b）側からとすればフオトマスクとして半導体光活
性層（３）（３）…が作用するので、この実施例にあっ
てもマスクアライメントが不要となる。When a negative photosensitive resin in which only the exposed portion remains as the insulating layer (4) is used, the semiconductor photoactive layers (3) (3) ... Not only is it unnecessary, but it is also possible to simplify the work without using photoresist. However,
If a photosensitive resin is not used as the insulating layer (4), for example, if SiO 2 , Si 3 N 4 or polyimide resin is used, it is necessary to use a photoresist, but ultraviolet light (UV) irradiation is required. Similarly, if the direction is from the other main surface (1b) side of the insulating substrate (1), the semiconductor photoactive layers (3) (3) ... Work as a photomask. It becomes unnecessary.
次いで第８図の工程では、絶縁層（４）のコンタクトホ
ール（５）（５）…を介して露出した半導体光活性層
（３）（３）…の背面を含んで上記絶縁層（４）上全域
にTCOからなる第２電極膜（６）が電子ビーム蒸着法等
により形成される。斯る第２電極膜（６）は半導体光活
性層（３）（３）…を挟んで対向する第１電極膜（2a）
〜（2e）と異なって複数の受光領域（Ａ）〜（Ｅ）に対
して共通電極として作用するために、受光領域（Ａ）〜
（Ｅ）毎に分割されることなく一様に形成されている。Next, in the step of FIG. 8, the insulating layer (4) including the back surface of the semiconductor photoactive layers (3) (3) exposed through the contact holes (5) (5) of the insulating layer (4). A second electrode film (6) made of TCO is formed on the entire upper surface by an electron beam evaporation method or the like. The second electrode film (6) faces the first electrode film (2a) with the semiconductor photoactive layers (3) (3) interposed therebetween.
Unlike (2e), since it acts as a common electrode for a plurality of light receiving regions (A) to (E), the light receiving regions (A) to (E)
(E) is formed uniformly without being divided.
尚、上述の如く第２電極膜（６）、保護板（７）を透光
性の材料にて構成することにより、保護板（７）側から
照射せしめられる光についても受光素子（LS）（LS）…
は受光動作することができる。更に、上記実施例にあっ
ては受光領域（Ａ）〜（Ｅ）は有効受光領域に５分割さ
れていたが、第１電極膜（2a）〜（2e）を上記有効受光
領域の全域に亘って一様に形成することもできる。As described above, the second electrode film (6) and the protective plate (7) are made of a translucent material, so that the light receiving element (LS) (LS) ( LS) ...
Can operate to receive light. Further, in the above embodiment, the light receiving regions (A) to (E) are divided into five effective light receiving regions, but the first electrode films (2a) to (2e) are spread over the entire effective light receiving region. Can also be formed uniformly.
（ト）発明の効果 本発明光センサは以上の説明から明らかな如く、有効受
光領域に離間して分散配置された複数の半導体光活性層
を、微細なパターニングが施されていない第１電極膜及
び第２電極膜で挟持すると共に、上記半導体光活性層が
存在しない上記第１・第２電極間には絶縁層を配挿せし
めたので、微細なパターニングが必要不可欠な工程は半
導体光活性層のみとなり、パターニングのための煩雑な
工程を、第１・第２電極膜の短絡事故を招くことなく減
少せしめることができる。(G) Effect of the Invention As is apparent from the above description, the photosensor of the present invention has a plurality of semiconductor photoactive layers which are dispersedly arranged in the effective light receiving region and which are not finely patterned on the first electrode film. In addition, since the insulating layer is interposed between the first and second electrodes in which the semiconductor photoactive layer is not present, the step of which fine patterning is indispensable is the semiconductor photoactive layer. The number of complicated steps for patterning can be reduced without causing a short circuit of the first and second electrode films.
第１図は本発明光センサの一実施例を示す分解斜視図、
第２図は第１図の要部拡大断面図、第３図乃至第８図は
本発明光センサの製造方法の主要部分を説明するための
模式図、第９図は従来例の一部分を示す斜視図、第10図
は第９図に於けるＸ−Ｘ′線断面図、第11図は第９図に
於けるXI−XI′線断面図、を夫々示している。 （１）…絶縁基板、（2a）〜（2e）…第１電極膜、
（３）…半導体光活性層、（４）…絶縁層、（５）…コ
ンタクトホール、（６）…第２電極膜。FIG. 1 is an exploded perspective view showing an embodiment of the optical sensor of the present invention,
FIG. 2 is an enlarged cross-sectional view of an essential part of FIG. 1, FIGS. 3 to 8 are schematic views for explaining a main part of a method for manufacturing an optical sensor of the present invention, and FIG. 9 shows a part of a conventional example. 10 is a perspective view, FIG. 10 is a sectional view taken along the line XX 'in FIG. 9, and FIG. 11 is a sectional view taken along the line XI-XI' in FIG. (1) ... Insulating substrate, (2a) to (2e) ... First electrode film,
(3) ... Semiconductor photoactive layer, (4) ... Insulating layer, (5) ... Contact hole, (6) ... Second electrode film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中野 昭一 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 桑野 幸徳 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (56)参考文献 特開 昭58−196758（ＪＰ，Ａ) 特開 昭58−66354（ＪＰ，Ａ) 特開 昭59−84588（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shoichi Nakano 2-18 Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Co., Ltd. (72) Inventor Yukinori Kuwano 2-18 Keihan Hondori, Moriguchi City, Osaka Sanyo Denki Incorporated (56) Reference JP-A-58-196758 (JP, A) JP-A-58-66354 (JP, A) JP-A-59-84588 (JP, A)
Claims (2)
域の受光部に亘って一様に形成された透光性の第１電極
膜、該第１電極膜上に離間して分散配置された多数個の
半導体光活性層、これら半導体光活性層相互間を埋設す
る、該光活性層から露出した第１電極膜を覆う絶縁層、
該絶縁層及び該絶縁層のコンタクトホールを介して露出
した上記光活性層上を含む、少なくとも上記受光部のほ
ぼ全域に亘って一様に形成された第２電極膜とからなる
光センサであって、上記第１電極膜と上記第２電極膜と
は、分散配置された半導体光活性層を並列接続すると共
に、該光活性層から露出した第１電極膜は上記受光部の
ほぼ全域に亘り、上記絶縁層を介して上記第２電極膜と
対向することを特徴とする光センサ。1. A transparent insulating substrate, a transparent first electrode film formed uniformly over a light receiving portion of an effective light receiving region of the insulating substrate, and dispersed on the first electrode film with a space therebetween. A plurality of arranged semiconductor photoactive layers, an insulating layer that fills the spaces between the semiconductor photoactive layers and covers the first electrode film exposed from the photoactive layers,
An optical sensor comprising the insulating layer and a second electrode film which is formed uniformly over at least substantially the entire area of the light receiving portion including the photoactive layer exposed through a contact hole of the insulating layer. Then, the first electrode film and the second electrode film are connected in parallel to the semiconductor photoactive layers that are dispersed, and the first electrode film exposed from the photoactive layer extends over substantially the entire area of the light receiving portion. An optical sensor that faces the second electrode film via the insulating layer.
分割されていると共に、上記半導体光活性層は複数の受
光部毎に分割された第１電極膜上に分散配置されている
ことを特徴とした特許請求の範囲第１項記載の光セン
サ。2. The first electrode film is uniformly divided into a plurality of light receiving portions, and the semiconductor photoactive layer is dispersedly arranged on the first electrode film divided into a plurality of light receiving portions. The optical sensor according to claim 1, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60155701A JPH0799779B2 (en) | 1985-07-15 | 1985-07-15 | Optical sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60155701A JPH0799779B2 (en) | 1985-07-15 | 1985-07-15 | Optical sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6216581A JPS6216581A (en) | 1987-01-24 |
| JPH0799779B2 true JPH0799779B2 (en) | 1995-10-25 |
Family
ID=15611624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60155701A Expired - Fee Related JPH0799779B2 (en) | 1985-07-15 | 1985-07-15 | Optical sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0799779B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5866354A (en) * | 1981-10-16 | 1983-04-20 | Hitachi Ltd | Photo receiving element |
| JPS58196758A (en) * | 1982-05-12 | 1983-11-16 | Hitachi Ltd | Light receiving element |
| JPS5984588A (en) * | 1982-11-08 | 1984-05-16 | Hitachi Ltd | Manufacture of photodetector |
-
1985
- 1985-07-15 JP JP60155701A patent/JPH0799779B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6216581A (en) | 1987-01-24 |
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