JPH0810169B2 - Vibration type differential pressure sensor - Google Patents
Vibration type differential pressure sensorInfo
- Publication number
- JPH0810169B2 JPH0810169B2 JP62163384A JP16338487A JPH0810169B2 JP H0810169 B2 JPH0810169 B2 JP H0810169B2 JP 62163384 A JP62163384 A JP 62163384A JP 16338487 A JP16338487 A JP 16338487A JP H0810169 B2 JPH0810169 B2 JP H0810169B2
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- differential pressure
- strain
- vibrating
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
- G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
- G01L9/0022—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a piezoelectric element
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は振動形の差圧センサに関するものである。The present invention relates to a vibration type differential pressure sensor.
更に詳述すれば、振動子に加わる静圧歪みの影響を除
去し得るようにした振動形の差圧センサに関するもので
ある。More specifically, the present invention relates to an oscillating differential pressure sensor capable of removing the influence of static pressure strain applied to a vibrator.
（従来の技術） 第３図は従来より一般に使用されている従来装置の構
成斜視図で、第４図は第３図におけるＸ−Ｘ断面図、第
５図は一部を省略した平面図である。(Prior Art) FIG. 3 is a perspective view of the configuration of a conventional device generally used in the past, FIG. 4 is a sectional view taken along line XX in FIG. 3, and FIG. is there.
このような装置は、たとえば、特願昭59−42632号公
報に示されている。Such a device is disclosed, for example, in Japanese Patent Application No. 59-42632.
これらの図において、１は弾性を有する半導体で構成
された基板で、例えば、シリコン基板が用いられてい
る。２はこの半導体基板１の一部を利用して構成されて
いる受圧ダイアフラムで、例えば半導体基板１をエッチ
ングして構成される。In these figures, 1 is a substrate made of a semiconductor having elasticity, for example, a silicon substrate is used. Reference numeral 2 is a pressure-receiving diaphragm formed by using a part of the semiconductor substrate 1, and is formed by etching the semiconductor substrate 1, for example.
３及び４は受圧ダイアフラム２上に形成させた両端固
定の微小な振動梁で、振動梁３は受圧ダイアフラム２の
ほぼ中央部に、振動梁４は受圧ダイアフラム２の周縁部
にそれぞれ位置している。これらの振動梁3,4は、例え
ば半導体基板１において、振動梁に相当する個所の周辺
部を、例えばアンダエッチングして形成されている。５
はシエルで、受圧ダイアフラム２上に形成された振動梁
３の周囲を覆い、この内部25（振動梁３の周囲）を真空
状態に保持するようにしたものである。シエル５は、こ
の場合はシリコンで構成され、受圧ダイアフラム２に、
例えば陽極接合法によって取付けられる。シエル５は振
動梁４にも設けられているが、ここでは省略する。な
お、シエル５は、第３図においては分りやすくするため
省略されている。Reference numerals 3 and 4 denote minute vibrating beams formed on the pressure-receiving diaphragm 2 and fixed at both ends. The vibrating beam 3 is located substantially at the center of the pressure-receiving diaphragm 2, and the vibrating beam 4 is located at the peripheral edge of the pressure-receiving diaphragm 2. . These vibrating beams 3 and 4 are formed by, for example, under-etching the peripheral portion of a portion corresponding to the vibrating beam in the semiconductor substrate 1, for example. 5
Is a shell that covers the periphery of the vibrating beam 3 formed on the pressure receiving diaphragm 2 and holds the inside 25 (around the vibrating beam 3) in a vacuum state. The shell 5 is made of silicon in this case, and is attached to the pressure receiving diaphragm 2.
For example, it is attached by an anodic bonding method. The shell 5 is also provided on the vibrating beam 4, but is omitted here. The shell 5 is omitted in FIG. 3 for the sake of clarity.
第６図は第４図における振動梁付近を拡大して示す断
面図である。ここではダイアフラム２としてｎ型シリコ
ン基板を用いた例である。この図において、21a,21bはP
+層で、21aと21bとは切込み部20によって電気的に分離
している。22はｎ型エピタキシャル層、23はP+層、24は
SiO2層である。エピタキシャル層22の一部は例えばアン
ダーエッチングによって隙間部25が形成されており、振
動梁３（４）は隙間部25上をまたがる両端固定のＰ層と
SiO2層とによって構成されている。FIG. 6 is an enlarged sectional view showing the vibrating beam and its vicinity in FIG. Here, an example in which an n-type silicon substrate is used as the diaphragm 2 is shown. In this figure, 21a and 21b are P
In the + layer, 21a and 21b are electrically separated by the notch 20. 22 is an n-type epitaxial layer, 23 is a P + layer, and 24 is
It is a SiO 2 layer. A gap 25 is formed in a part of the epitaxial layer 22 by, for example, under-etching, and the vibrating beam 3 (4) is a P layer fixed on both ends and extending over the gap 25.
It is composed of a SiO 2 layer.
第６図において、振動梁３（４）を構成するＰ層23
と、隙間部25を介して対向するＰ層21a,21bは、静電電
極を構成しており、ここでは振動片３（４）を、Ｐ層21
aとＰ層23との間に働く静電力を利用して励振させ、ま
た、Ｐ層21bとＰ層23との間の静電容量変化によって、
振動梁３（４）の振動を検出するようになっている。In FIG. 6, the P layer 23 that constitutes the vibrating beam 3 (4)
And the P layers 21a and 21b facing each other through the gap 25 constitute an electrostatic electrode. Here, the vibrating piece 3 (4) is connected to the P layer 21.
It is excited by utilizing the electrostatic force acting between a and the P layer 23, and by the capacitance change between the P layer 21b and the P layer 23,
The vibration of the vibrating beam 3 (4) is detected.
OSCは発振回路で、この回路は外部あるいは、半導体
基板１を利用して構成されており、入力端はＰ層21bが
接続され、振動梁３（４）の振動に関連した信号が印加
される。また、出力端はＰ層21aが接続され、Ｐ層21aと
Ｐ層23間に出力信号を与える。これによって、発振回路
OSCと、振動梁３（４）とは、振動梁の固有振動数で発
振する自励発振回路を構成する。OSC is an oscillating circuit, which is configured externally or by utilizing the semiconductor substrate 1, the P layer 21b is connected to the input end, and a signal related to the vibration of the vibrating beam 3 (4) is applied. . The P layer 21a is connected to the output terminal, and an output signal is given between the P layer 21a and the P layer 23. This allows the oscillator circuit
The OSC and the vibrating beam 3 (4) form a self-excited oscillation circuit that oscillates at the natural frequency of the vibrating beam.
この様に構成した圧力センサにおいて、受圧ダイアフ
ラム２に、第４図矢印Ｐに示すように内側から圧力を与
えるものとすれば、この圧力を受けて受圧ダイアフラム
２は撓み、中央に形成されている振動梁３には引張力
が、ダイアフラム２の周縁部に形成されている振動梁４
には圧縮力がそれぞれ加わる。これにより各振動梁3,4
の固有振動数f1,f2は、圧力Ｐに対して差動的に変化す
ることとなり、例えばf1−f2の差を演算することによっ
て、圧力Ｐを測定することができる。In the pressure sensor configured as described above, if pressure is applied to the pressure-receiving diaphragm 2 from the inside as shown by an arrow P in FIG. 4, the pressure-receiving diaphragm 2 is bent by the pressure and is formed in the center. A tensile force is applied to the vibrating beam 3 and the vibrating beam 4 is formed on the peripheral portion of the diaphragm 2.
A compressive force is applied to each. This allows each vibrating beam 3,4
The natural frequencies f 1 and f 2 of the above change differentially with respect to the pressure P. For example, the pressure P can be measured by calculating the difference of f 1 −f 2 .
而して、シエル５により振動梁3,4が真空中に置かれ
るため、振動梁3,4のＱを高くすることができる。Thus, since the vibrating beams 3 and 4 are placed in vacuum by the shell 5, the Q of the vibrating beams 3 and 4 can be increased.
（発明が解決しようとする問題点） しかしながら、このような装置においては、静圧特性
の影響については考慮されておらず、静圧誤差により大
なる誤差を生ずる。(Problems to be Solved by the Invention) However, in such a device, the influence of the static pressure characteristic is not taken into consideration, and a large error occurs due to the static pressure error.
本発明は、この問題点を解決するものである。 The present invention solves this problem.
本発明の目的は静圧誤差の少い振動形差圧センサを提
供するにある。An object of the present invention is to provide a vibration type differential pressure sensor with a small static pressure error.
（問題点を解決するための手段） この目的を達成するために、本発明は、差圧によって
変形するダイアフラムを有するシリコン単結晶の基板を
具備する振動形差圧センサにおいて、 前記ダイアフラムの中心部に設けられ該ダイヤフラム
の表面付近の歪を測定する第１の振動子と、前記ダイア
フラムの固定端部に設けられ前記ダイアフラムの表面付
近の歪を測定し静圧印加により前記第１の振動子が検出
する圧縮歪と同値の圧縮歪を検出し差圧印加により前記
第１の振動子が検出する検出歪値と符号が反対の検出歪
値を検出する第２の振動子と、前記２個の振動子の共振
周波数を測定する測定手段と、該測定手段の信号に基づ
き差圧印加時の前記２個の振動子の共振周波数を減算あ
るいは加算して静圧印加による影響を取り除くように演
算する演算手段とを具備したことを特徴とする振動形差
圧センサを構成したものである。(Means for Solving the Problems) In order to achieve this object, the present invention provides a vibrating differential pressure sensor including a silicon single crystal substrate having a diaphragm that is deformed by a differential pressure, wherein a central portion of the diaphragm is provided. A first vibrator provided on the fixed surface of the diaphragm for measuring the strain near the surface of the diaphragm, and a static pressure applied to the first vibrator to measure the strain near the surface of the diaphragm. A second vibrator for detecting a compression strain having the same value as the detected compression strain and detecting a detected strain value having a sign opposite to that of the detected strain value detected by the first oscillator by applying a differential pressure; Measuring means for measuring the resonance frequency of the vibrator, and calculation based on the signal of the measuring means so as to subtract or add the resonance frequencies of the two vibrators when a differential pressure is applied to remove the influence of static pressure application. Is obtained by constituting the oscillation type differential pressure sensor, characterized by comprising a calculating means.
（作用） 以上の構成において、ダイアフラムに差圧が加わる
と、２個の振動子の共振周波数が測定手段によって測定
される。測定手段からの信号により演算手段において、
振動子に加わる静圧歪みの影響を取除くように演算され
る。(Operation) In the above configuration, when a differential pressure is applied to the diaphragm, the resonance frequencies of the two vibrators are measured by the measuring means. In the calculating means by the signal from the measuring means,
It is calculated so as to remove the influence of the static pressure strain applied to the vibrator.
以下、実施例に基づき詳細に説明する。 Hereinafter, detailed description will be given based on examples.
（実施例） 第１図は、本発明の一実施例の要部構成説明図、第２
図は第１図の平面図である。(Embodiment) FIG. 1 is an explanatory view of a main part configuration of an embodiment of the present invention, FIG.
The figure is a plan view of FIG.
図において、第３図から第６図と同一記号は同一機能
を示す。In the figure, the same symbols as in FIGS. 3 to 6 indicate the same functions.
以下、第３図から第６図と相違部分のみ説明する。 Only parts different from FIGS. 3 to 6 will be described below.
基板１は＜100＞ウェハーで、受圧ダイアフラム２は
アルカリ液による異方性エッチングにより加工されてい
る。その４辺は＜110＞方向に配置されている。振動梁
３はダイアフラム２の中心部に、振動梁４はダイアフラ
ム２の固定端部に配置されている。振動梁3,4の方向
は、アルカリ液によるアンダーエッチングの手法を用い
て加工できるように＜010＞方向をなしている。The substrate 1 is a <100> wafer, and the pressure receiving diaphragm 2 is processed by anisotropic etching using an alkaline solution. The four sides are arranged in the <110> direction. The vibrating beam 3 is arranged at the center of the diaphragm 2, and the vibrating beam 4 is arranged at the fixed end of the diaphragm 2. The vibrating beams 3 and 4 are oriented in the <010> direction so that the vibrating beams 3 and 4 can be processed using an under-etching method using an alkaline solution.
以上の構成において、 一般に、長さに比べて厚みが非常に小さい振動子（該
振動子）の共振周波数は下記の如く示される。In the above structure, the resonance frequency of the vibrator (the vibrator) whose thickness is much smaller than its length is generally shown as follows.
したがって、振動梁3,4に差圧ΔＰが加わると振動梁
3,4の共振周波数f1,f2は下記の如くになる。 Therefore, if a differential pressure ΔP is applied to the vibrating beams 3 and 4,
The resonance frequencies f 1 and f 2 of 3 and 4 are as follows.
l;振動梁3,4の長さ E;ヤング率 ρ；密度 εo1,εo2;振動梁3,4の初期歪み，振動子中の不純物濃
度に比例する。 l; Length of vibrating beams 3 and 4 E; Young's modulus ρ; Density εo 1 , εo 2 ; Initial strain of vibrating beams 3 and 4, proportional to the impurity concentration in the oscillator.
εΔ1,εΔ2;差圧ΔＰによる振動梁3,4の歪み 不純物濃度が等しいとすると、εo1＝εo2≡εｏ 第２図の形状と位置に振動子を配置すると、εΔ１＝
εΔ２≡εΔ シリコンの静圧による圧縮歪みεp1＝εp2≡εｐと仮
定すると、 2a;ダイヤフラム２の辺の長さ t;ダイヤフラム２の厚さ K;位置によって決まる定数（0.43） となり静圧歪みの影響を取除くことができる。εΔ 1 , εΔ 2 ; Distortion of vibrating beams 3 and 4 due to differential pressure ΔP Assuming that the impurity concentrations are the same, εo 1 = εo 2 ≡εo If the oscillator is arranged in the shape and position shown in FIG. 2, εΔ 1 =
When .epsilon..DELTA 2 compressive strain due to the static pressure of ≡εΔ silicon εp 1 = εp 2 ≡εp and assuming, 2a; side length of diaphragm 2; thickness of diaphragm 2 K; constant determined by position (0.43) The influence of static pressure strain can be eliminated.
また、 ν；ポアソン比 P0;静圧 となり、第１項は定数であり、第２項は静圧に比例す
る。したがって、この信号を使用して、差圧伝送器の静
圧による種々の誤差、たとえば、シールダイアフラムの
変形、本体ボディの変形等による誤差を補償することが
できる。Also, ν; Poisson's ratio P 0 ; Static pressure Where the first term is a constant and the second term is proportional to the static pressure. Therefore, this signal can be used to compensate for various errors due to the static pressure of the differential pressure transmitter, such as deformation of the seal diaphragm, deformation of the body, etc.
したがって、測定手段（図示せず）により振動梁3,4
の差圧による共振周波数f1,f2を測定し、演算手段（図
示せず）により演算する事により、静圧による誤差を取
除くことができる。演算はマイクロプロセッサを使用し
て容易に実行することができる。Therefore, the vibrating beams 3 and 4 are
The error due to the static pressure can be removed by measuring the resonance frequencies f 1 and f 2 due to the differential pressure and calculating by the calculating means (not shown). Arithmetic can be easily performed using a microprocessor.
なお、1.差圧歪の高次項の影響、2.静圧歪みの高次項
の影響は下記の如くして除くことができ、より高精度の
振動形差圧センサを得ることができる。The effects of 1. The higher order term of the differential pressure strain and 2. The higher order term of the static pressure strain can be eliminated as described below, and a more accurate vibration type differential pressure sensor can be obtained.
1. 差圧歪の高次項の影響を除く、 （６）式より ΔＰ＝K1（f1 2−f2 2） （９） と表わされるが、非線形性を補正するために、高次項を
追加して、次式の如く演算する。1. Excluding the influence of higher order term of differential pressure strain, it is expressed as ΔP = K 1 (f 1 2 −f 2 2 ) (9) from equation (6), but in order to correct the nonlinearity, the higher order term is In addition, the calculation is performed according to the following equation.
ΔP=K1(f1 2-f2 2)+K2)(f1 2-f2 2)2+K3(f1 2-f2 2)3 +…Kn(f1 2-f2 2)n （10） 2. 静圧歪みの高次項の影響を除く、 （１）式の代りに次式を用いて歪みと周波数の関係を
精密に値付けする。ΔP = K 1 (f 1 2 -f 2 2 ) + K 2 ) (f 1 2 -f 2 2 ) 2 + K 3 (f 1 2 -f 2 2 ) 3 +… Kn (f 1 2 -f 2 2 ) n (10) 2. Exclude the influence of higher-order terms of static pressure strain. Instead of formula (1), use the following formula to precisely value the relationship between strain and frequency.
ε＝A0＋A1f＋A2f2…Anfn （１）′ したがって（２）（３）式は次のようになる。ε = A 0 + A 1 f + A 2 f 2 ... Anf n (1) ′ Therefore, the equations (2) and (3) are as follows.
εo1+εΔ1+εp1＝A10+A11f1+A12f1 2…+A1nfn （２）′ εo2-εΔ2+εp2＝A20+A21f1+A22f2 2…A2nf2 n （３）′ （２）′と（３）′式を差引いて、εp1,εp2が消去
できるように適当な定数Ｂを求めて次式を得ることがで
きる。 εo 1 + εΔ 1 + εp 1 = A 10 + A 11 f 1 + A 12 f 1 2 ... + A 1n f n (2) 'εo 2 -εΔ 2 + εp 2 = A 20 + A 21 f 1 + A 22 f 2 2 … A 2n f 2 n (3) '(2)' and (3) 'are subtracted to obtain an appropriate constant B so that εp 1 and εp 2 can be eliminated, and the following equation is obtained. You can
(εΔ1+BεΔ2)+(εo1-Bεo2) =(A10+A11f1…A1nf1 n)-B(A20+A21f1+…A2nf2 n)（５）′ （５）′を用いて（10）式のように差圧の高次項（非
線形項）を記述する事により高精度の差圧センサが得ら
れる。(εΔ 1 + BεΔ 2 ) + (εo 1 -Bεo 2 ) = (A 10 + A 11 f 1 … A 1n f 1 n ) -B (A 20 + A 21 f 1 +… A 2n f 2 n ) ( 5) 'By using (5)' to describe the higher order term (non-linear term) of the differential pressure as in equation (10), a highly accurate differential pressure sensor can be obtained.
ΔＰ＝K0＋K1F（f1,f2）＋K2（Ｆ（f1,f2）） ＋…＋Kn（Ｆ（f1,f2））ｎ…８′ （８）′ 但し、Ｆ（f1,f2）は（５）′の右辺を表わす。ΔP = K 0 + K 1 F (f 1 , f 2 ) + K 2 (F (f 1 , f 2 )) + ... + Kn (F (f 1 , f 2 )) n … 8 ′ (8) ′ where F (F 1 , f 2 ) represents the right side of (5) ′.
（発明の効果） 以上説明したように、本発明は、差圧によって変形す
るダイアフラムを有するシリコン単結晶の基板を具備す
る振動形差圧センサにおいて、 前記ダイアフラムの中心部に設けられ該ダイヤフラム
の表面付近の歪を測定する第１の振動子と、前記ダイア
フラムの固定端部に設けられ前記ダイアフラムの表面付
近の歪を測定し静圧印加により前記第１の振動子が検出
する圧縮歪と同値の圧縮歪を検出し差圧印加により前記
第１の振動子が検出する検出歪値と符号が反対の検出歪
値を検出する第２の振動子と、前記２個の振動子の共振
周波数を測定する測定手段と、該測定手段の信号に基づ
き差圧印加時の前記２個の振動子の共振周波数を減算あ
るいは加算して静圧印加による影響を取り除くように演
算する演算手段とを具備したことを特徴とする振動形差
圧センサを構成したので、静圧特性の補償をすることが
できる。(Effects of the Invention) As described above, the present invention relates to a vibrating differential pressure sensor including a silicon single crystal substrate having a diaphragm that is deformed by a differential pressure, in which the surface of the diaphragm is provided at the center of the diaphragm. A first oscillator that measures the strain in the vicinity and a compressive strain that is provided at the fixed end of the diaphragm and that measures the strain in the vicinity of the surface of the diaphragm and that the first oscillator detects by applying static pressure A resonance frequency of the two vibrators is measured, and a second vibrator that detects a compression strain and detects a detection strain value having a sign opposite to that of the detection strain value detected by the first vibrator by applying a differential pressure. And a calculation means for calculating based on a signal of the measurement means so as to subtract or add the resonance frequencies of the two vibrators at the time of applying a differential pressure to remove the influence of static pressure application. Since it constitutes a vibration type differential pressure sensor, wherein the door can be compensation for static pressure characteristics.
したがって、本発明によれば、静圧の誤差の少い振動
形差圧センサを実現することができる。Therefore, according to the present invention, it is possible to realize a vibration type differential pressure sensor having a small static pressure error.
第１図は本発明の一実施例の要部構成説明図、第２図は
第１図の平面図、第３図は従来より一般に使用されてい
る従来例の構成説明図、第４図は第３図のＸ−Ｘ断面
図、第５図は第３図の一部を省略した平面図、第６図は
第４図の要部拡大図である。 １……基板、２……受圧ダイアフラム、3,4……振動
梁、５……シエル。FIG. 1 is an explanatory view of the essential parts of an embodiment of the present invention, FIG. 2 is a plan view of FIG. 1, FIG. 3 is an explanatory view of the structure of a conventional example generally used in the past, and FIG. FIG. 5 is a sectional view taken along line XX in FIG. 3, FIG. 5 is a plan view in which a part of FIG. 3 is omitted, and FIG. 6 is an enlarged view of a main part of FIG. 1 ... Substrate, 2 ... Pressure receiving diaphragm, 3,4 ... Vibration beam, 5 ... Shell.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉田 隆司 東京都武蔵野市中町２丁目９番32号 横河 電機株式会社内 (72)発明者 桑山 秀樹 東京都武蔵野市中町２丁目９番32号 横河 電機株式会社内 (72)発明者 小林 隆 東京都武蔵野市中町２丁目９番32号 横河 電機株式会社内 (72)発明者 渡辺 哲也 東京都武蔵野市中町２丁目９番32号 横河 電機株式会社内 (56)参考文献 特開 昭60−186725（ＪＰ，Ａ) 実開 昭57−188138（ＪＰ，Ｕ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takashi Yoshida 2-932 Nakamachi, Musashino City, Tokyo Yokogawa Electric Co., Ltd. (72) Hideki Kuwayama 2-932 Nakamachi, Musashino City, Tokyo Horizontal Within Kawa Denki Co., Ltd. (72) Takashi Kobayashi 2-932 Nakamachi, Musashino City, Tokyo Inside Yokogawa Denki Co., Ltd. (72) Tetsuya Watanabe 2-932 Nakamachi, Musashino City, Tokyo Yokogawa Denki Within the corporation (56) References JP-A-60-186725 (JP, A) Actual development: S57-188138 (JP, U)
Claims (1)
るシリコン単結晶の基板を具備する振動形差圧センサに
おいて、 前記ダイアフラムの中心部に設けられ該ダイヤフラムの
表面付近の歪を測定する第１の振動子と、 前記ダイアフラムの固定端部に設けられ前記ダイアフラ
ムの表面付近の歪を測定し静圧印加により前記第１の振
動子が検出する圧縮歪と同値の圧縮歪を検出し差圧印加
により前記第１の振動子が検出する検出歪値と符号が反
対の検出歪値を検出する第２の振動子と、 前記２個の振動子の共振周波数を測定する測定手段と、 該測定手段の信号に基づき差圧印加時の前記２個の振動
子の共振周波数を減算あるいは加算して静圧印加による
影響を取り除くように演算する演算手段 とを具備したことを特徴とする振動形差圧センサ。1. A vibrating differential pressure sensor comprising a silicon single crystal substrate having a diaphragm that is deformed by a differential pressure, wherein a first vibration is provided at the center of the diaphragm to measure strain near the surface of the diaphragm. And a fixed end portion of the diaphragm, the strain near the surface of the diaphragm is measured, and the static strain is applied to detect the compressive strain having the same value as the compressive strain detected by the first vibrator, and the differential pressure is applied to detect the compressive strain. A second oscillator for detecting a detected strain value having a sign opposite to that of the detected strain value detected by the first oscillator; measuring means for measuring the resonance frequency of the two oscillators; and a signal of the measuring means. And a calculation means for calculating the resonance frequencies of the two vibrators when a differential pressure is applied by subtracting or adding so as to remove the influence of static pressure application. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62163384A JPH0810169B2 (en) | 1987-06-30 | 1987-06-30 | Vibration type differential pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62163384A JPH0810169B2 (en) | 1987-06-30 | 1987-06-30 | Vibration type differential pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS646837A JPS646837A (en) | 1989-01-11 |
| JPH0810169B2 true JPH0810169B2 (en) | 1996-01-31 |
Family
ID=15772863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62163384A Expired - Lifetime JPH0810169B2 (en) | 1987-06-30 | 1987-06-30 | Vibration type differential pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0810169B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2538190A1 (en) | 2011-06-23 | 2012-12-26 | Yokogawa Electric Corporation | Sensor unit |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02269928A (en) * | 1989-04-12 | 1990-11-05 | Yokogawa Electric Corp | Vacuum gauge |
| JP4636428B2 (en) | 2003-12-05 | 2011-02-23 | 横河電機株式会社 | Multivariable transmitter and arithmetic processing method of multivariable transmitter |
| US7017418B1 (en) * | 2004-12-15 | 2006-03-28 | General Electric Company | System and method for sensing pressure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6333145Y2 (en) * | 1981-05-26 | 1988-09-05 | ||
| JPS60186725A (en) * | 1984-03-06 | 1985-09-24 | Yokogawa Hokushin Electric Corp | Pressure sensor |
-
1987
- 1987-06-30 JP JP62163384A patent/JPH0810169B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2538190A1 (en) | 2011-06-23 | 2012-12-26 | Yokogawa Electric Corporation | Sensor unit |
| US9116063B2 (en) | 2011-06-23 | 2015-08-25 | Yokogawa Electric Corporation | Sensor unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS646837A (en) | 1989-01-11 |
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