JPH0810643B2 - Manufacturing method of positive temperature coefficient thermistor - Google Patents
Manufacturing method of positive temperature coefficient thermistorInfo
- Publication number
- JPH0810643B2 JPH0810643B2 JP872789A JP872789A JPH0810643B2 JP H0810643 B2 JPH0810643 B2 JP H0810643B2 JP 872789 A JP872789 A JP 872789A JP 872789 A JP872789 A JP 872789A JP H0810643 B2 JPH0810643 B2 JP H0810643B2
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- Prior art keywords
- temperature coefficient
- positive temperature
- coefficient thermistor
- brazing
- ptc
- Prior art date
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- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は正特性サーミスタ(PTC)の製造方法に係
り,特に,放熱フィンを正特性サーミスタ基板に固定し
てなる正特性サーミスタの製造方法の改良に関する。The present invention relates to a method for manufacturing a positive temperature coefficient thermistor (PTC), and more particularly to a method for manufacturing a positive temperature coefficient thermistor in which a radiation fin is fixed to a positive temperature coefficient thermistor substrate. Regarding improvement.
この種の正特性サーミスタとしては,第8図に示すよ
うに,正特性サーミスタ基板1の各対向主面に対向電極
3を形成し,帯状の金属薄板,例えばアルミニウム薄板
を波形に形成した各コルゲートフィン5の一方の山部を
各々の対向電極3に固定し,各コルゲートフィン5の他
方の山部にフィンカバー7を固定し,フィンカバー7か
ら端子板9を導出した構成が良く知られている。As shown in FIG. 8, a PTC thermistor of this type has corrugates in which a counter electrode 3 is formed on each main surface of a PTC thermistor substrate 1 and a strip-shaped metal thin plate, for example, an aluminum thin plate is formed in a corrugated shape. It is well known that one peak of the fin 5 is fixed to each counter electrode 3, the fin cover 7 is fixed to the other peak of each corrugated fin 5, and the terminal plate 9 is led out from the fin cover 7. There is.
そして,コルゲートフィン5を対向電極3に固定する
方法としては,ろう材を付着させたコルゲートフィン5
を対向電極3に重ねた後,真空中で約600℃に加熱して
ろう材を溶かし,コルゲートフィン5を対向電極3に固
定するろう付け法がある。As a method of fixing the corrugated fins 5 to the counter electrode 3, the corrugated fins 5 to which a brazing material is attached are attached.
There is a brazing method in which the corrugated fins 5 are fixed to the counter electrode 3 by superposing them on the counter electrode 3 and then heating to about 600 ° C. in a vacuum to melt the brazing material.
第9図はろう付け後の状態を示しており,符号11はろ
う材である。FIG. 9 shows a state after brazing, and reference numeral 11 is a brazing material.
このような正特性サーミスタは,端子板9間に交流電
圧を印加して正特性サーミスタ基板1を発熱させると発
熱装置として利用できるが,キューリ温度で抵抗値が急
激に上昇するので、その表面温度が略そのキューリ温度
で安定し,周囲の温度や電圧変動に影響し難い利点があ
る。Such a positive temperature coefficient thermistor can be used as a heat generator when an alternating voltage is applied between the terminal plates 9 to heat the positive temperature coefficient thermistor substrate 1. However, since the resistance value sharply increases at the Curie temperature, the surface temperature of the positive temperature coefficient thermistor increases. However, it has the advantage that it is stable at the Curie temperature and is unlikely to affect ambient temperature and voltage fluctuations.
しかしながら,上述した正特性サーミスタは,真空中
でコルゲートフィン5を対向電極3にろう付けすると,
キューリ温度で抵抗値があまり上昇しない等,PTC特性が
劣化する難点のあること分かった。However, in the above-mentioned positive temperature coefficient thermistor, when the corrugated fin 5 is brazed to the counter electrode 3 in vacuum,
It was found that there is a problem that PTC characteristics deteriorate, such as the resistance value does not rise so much at the Curie temperature.
このように,真空中でコルゲートフィン5をろう付け
すると,PTC特性が劣化する原因は明確ではないが,例え
ば次のような理由が考えられる。As described above, when the corrugated fins 5 are brazed in a vacuum, the cause of deterioration of the PTC characteristics is not clear, but the following reasons can be considered.
すなわち,一般には完全な真空に近い高真空状態を形
成し難いことから,ろう付処理容器内を例えば10-5Torr
程度の真空度にするとともに,ろう付材料よりも活性化
し易いろう付促進用金属例えばマグネシウム等を混入さ
せたろう付材料を用い,高真空度状態を形成しながらろ
う付けすることが行われている。That is, since it is generally difficult to form a high vacuum state close to a complete vacuum, the inside of the brazing process container is, for example, 10 -5 Torr.
Brazing is performed while forming a high degree of vacuum by using a brazing material mixed with a brazing promoting metal such as magnesium which is easier to activate than the brazing material while maintaining a degree of vacuum. .
そのため,ろう付け時の高温雰囲気中ではろう付材料
から金属成分が気化析出し易く,それが正特性サーミス
タ基板1の端面から内部の空孔へ入り込んで正特性サー
ミスタの絶縁特性を劣化させる点が挙げられる。Therefore, in the high temperature atmosphere at the time of brazing, the metal component is easily vaporized and precipitated from the brazing material, and the metal component enters from the end face of the positive temperature coefficient thermistor substrate 1 into the internal holes and deteriorates the insulating characteristics of the positive temperature coefficient thermistor. Can be mentioned.
第9図中符号13は正特性サーミスタ基板1の端面から
入り込んだ金属成分である。Reference numeral 13 in FIG. 9 is a metal component that enters from the end face of the positive temperature coefficient thermistor substrate 1.
また,金属成分13の還元作用によって正特性サーミス
タ基板1中の酸素成分が一部還元され,PTC特性を劣化さ
せることが考えられる。Further, it is conceivable that the oxygen component in the positive temperature coefficient thermistor substrate 1 is partially reduced by the reducing action of the metal component 13 and the PTC characteristic is deteriorated.
なお,コルゲートフィン5にフラックスを付着させて
ろう付けすれば,高真空中でろう付けしなくとも,ろう
材を酸化させずにろう付け可能となるが、フラックスを
塗布する必要があるうえ,ろう付け後にフラックスを洗
浄しなければならない。In addition, if flux is attached to the corrugated fins 5 and brazed, it is possible to braze without oxidizing the brazing material without brazing in a high vacuum, but it is necessary to apply the flux. The flux must be cleaned after application.
ところが、正特性サーミスタ基板1は多孔質であるか
ら,フラックスが正特性サーミスタ基板1の内部へしみ
込んで洗浄し難いのが現状で,フラックスを清浄するた
めに酸清浄やアルカリ洗浄によってフラックスを除去さ
せることになり,PTC特性を劣化させる可能性があるうえ
フラックスを完全に除去することは困難である。However, since the PTC thermistor substrate 1 is porous, it is difficult for the flux to permeate the inside of the PTC thermistor substrate 1 for cleaning. In order to clean the flux, the flux is removed by acid cleaning or alkali cleaning. Therefore, it may deteriorate PTC characteristics and it is difficult to completely remove the flux.
この点,高真空状態でフラックスを使用せずにろう付
けする手法の方が優れている。In this respect, the method of brazing in a high vacuum state without using flux is superior.
本発明はこのような状況の下になされたもので、真空
中等の非酸化性雰囲気中て金属製の放熱フィンを対向電
極にろう付けしても,PTC特性を劣化させ難い正特性サー
ミスタの製造方法を提供するものである。The present invention has been made under such circumstances, and it is possible to manufacture a positive temperature coefficient thermistor in which the PTC characteristics are not easily deteriorated even if a metal heat radiation fin is brazed to a counter electrode in a non-oxidizing atmosphere such as a vacuum. It provides a method.
このような課題を解決するために本発明は,正特性サ
ーミスタ基板の対向面に電極を形成し,非酸化性雰囲気
中で前記電極に金属製放熱フィンをろう付けして固定し
た後,480℃以上の温度に加熱された酸化性雰囲気中にそ
の正特性サーミスタ基板をさらして正特性サーミスタを
製造するものである。In order to solve such a problem, the present invention forms an electrode on the opposing surface of a positive temperature coefficient thermistor substrate, and brazes and fixes a metal radiation fin to the electrode in a non-oxidizing atmosphere, and then 480 ° C. The PTC thermistor is manufactured by exposing the PTC thermistor substrate to an oxidizing atmosphere heated to the above temperature.
このような手段を備えた本発明では,ろう付け工程
で,ろう付促進用金属材料の金属成分が正特性サーミス
タ基板の端面から内部の空孔へ入り込んでも,正特性サ
ーミスタ基板が高温酸化性雰囲気中にさらされることに
より,その入り込んだ金属成分が酸化して絶縁物とな
り,また,還元された正特性サーミスタ基板も復元され
てPTC特性が回復する。In the present invention equipped with such means, even if the metal component of the brazing promoting metal material enters the internal pores from the end face of the PTC thermistor substrate in the brazing process, the PTC thermistor substrate is exposed to a high temperature oxidizing atmosphere. When exposed to the inside, the metal component that has entered is oxidized and becomes an insulator, and the reduced PTC thermistor substrate is also restored and the PTC characteristic is restored.
以下本発明の実施例を図面を参照して説明する。な
お,上述した構成と共通する部分には同一の符号を付
す。Embodiments of the present invention will be described below with reference to the drawings. The same parts as those in the above-mentioned configuration are designated by the same reference numerals.
第1図〜第3図は本発明に係る正特性サーミスタの製
造方法の一実施例を示す工程図である。1 to 3 are process drawings showing an embodiment of a method for manufacturing a positive temperature coefficient thermistor according to the present invention.
まず,例えばチタン酸バリウム系の正特性セラミック
ス材料から厚さ数mmの長方形板を成形した後,これを焼
成して正特性サーミスタ基板1を形成し,その対向主面
にアルミニウム材料を溶射して対向電極3を形成する
(第1図)。First, for example, a rectangular plate having a thickness of several millimeters is formed from a barium titanate-based positive-characteristic ceramic material, and then this is fired to form a positive-characteristic thermistor substrate 1, and an aluminum material is sprayed on the opposing main surface. The counter electrode 3 is formed (FIG. 1).
次に,略一定幅の金属薄板,例えはアルミニウム帯板
を波型に屈曲形成したコルゲートフィン5を2個用意
し,各コルゲートフィン5の表面にろう材を付着し,各
々のコルゲートフィン5の一方の山部を各対向電極3に
重ねて真空容器15中に配置する(第2図)。なお,一般
にろう材中にはマグネシウム等のろう付促進用金属が混
入される。Next, prepare two corrugated fins 5 each having a corrugated fin formed by bending a metal thin plate having a substantially constant width, for example, an aluminum strip into a corrugated shape. A brazing material is attached to the surface of each corrugated fin 5, and each corrugated fin 5 is formed. One peak is placed on each counter electrode 3 and placed in the vacuum container 15 (FIG. 2). Generally, a brazing-promoting metal such as magnesium is mixed in the brazing material.
そして,真空容器15内を脱気して10-4〜-5Torr程度の
真空状態にして、内部をろう材の溶解温度以上,例えば
600℃程度に加熱してろう材を溶解した後,温度を低下
させて各コルゲートフィン5を対向電極3に固定する。Then, the inside of the vacuum vessel 15 is degassed to a vacuum state of about 10 −4 to −5 Torr, and the inside is heated to the melting temperature of the brazing material or higher,
After heating to about 600 ° C. to melt the brazing material, the temperature is lowered and each corrugated fin 5 is fixed to the counter electrode 3.
さらに,第3図に示すように,正特性サーミスタ基板
1を酸化物処理容器17内に収納し,酸化処理容器17内を
大気圧と同じ圧力にして内部を約580℃に加熱し,正特
性サーミスタ基板1を約4時間さらす。Further, as shown in FIG. 3, the positive temperature coefficient thermistor substrate 1 is housed in an oxide treatment container 17, the inside of the oxidation treatment container 17 is heated to about 580 ° C. with the same pressure as the atmospheric pressure, and the positive temperature coefficient is increased. The thermistor substrate 1 is exposed for about 4 hours.
その後,正特性サーミスタ基板1を取り出すと,第4
図に示すような正特性サーミスタが得られる。After that, when the PTC thermistor substrate 1 is taken out, the fourth
A positive temperature coefficient thermistor as shown in the figure is obtained.
このような製造方法でも,ろう付け工程においてろう
付材料からマグネシウム等の金属成分が析出し,第9図
のように正特性サーミスタ基板1の端面から内部の空孔
へ入り込んで正特性サーミスタ基板1の一部を還元させ
る可能性がある。Even with such a manufacturing method, a metal component such as magnesium is precipitated from the brazing material in the brazing process and enters the internal holes from the end face of the positive temperature coefficient thermistor substrate 1 as shown in FIG. May reduce some of the
しかし,その後に正特性サーミスタ基板1を高温大気
雰囲気中にさらすことにより,その入り込んだ金属材料
が酸化して絶縁物となるとともに一部還元されていた部
分も酸化され,良好なPTC特性が回復される。However, when the PTC thermistor substrate 1 is subsequently exposed to a high-temperature atmosphere, the metal material that has entered is oxidized and becomes an insulator and the part that has been partially reduced is also oxidized, and good PTC characteristics are restored. To be done.
第5図はろう付後に加熱しないで製造した場合(破
線)と加熱して製造した場合(実線)について,正特性
サーミスタ基板1の発熱温度に対する比抵抗の変化を示
す所謂PTC特性図である。FIG. 5 is a so-called PTC characteristic diagram showing changes in the specific resistance with respect to the heat generation temperature of the positive temperature coefficient thermistor substrate 1 in the case of manufacturing without heating after brazing (broken line) and the case of manufacturing with heating (solid line).
これによると,本発明による製造方法で製造された正
特性サーミスタは良好なPTC特性を示すことが分かる。From this, it can be seen that the positive temperature coefficient thermistor manufactured by the manufacturing method according to the present invention exhibits good PTC characteristics.
ところで,本発明者の実験によれば,所定のPTC特性
への回復の程度や回復に要する時間は,大気雰囲気中の
温度,酸素量,圧力によって変化することが分かった。By the way, according to the experiments by the present inventor, it was found that the degree of recovery to a predetermined PTC characteristic and the time required for the recovery varied depending on the temperature, the amount of oxygen and the pressure in the air atmosphere.
例えば,アルミニウム電極3に同じくアルミニウムの
コルゲートフィン5をろう材でろう付けした場合,第6
図に示すように,580℃の大気雰囲気中に正特性サーミス
タ基板1を放置すると,4時間程で実用上使用可能な特性
に回復した。For example, when the aluminum corrugated fins 5 are also brazed to the aluminum electrodes 3 with a brazing material,
As shown in the figure, when the positive temperature coefficient thermistor substrate 1 was left in the atmosphere at 580 ° C., the characteristics were recovered to practical use in about 4 hours.
なお,第6図は放置時間に対する比抵抗率の変化を示
す特性図であり,比抵抗比率は正特性サーミスタ基板1
の動作時の最高抵抗値/最低抵抗値で示される。FIG. 6 is a characteristic diagram showing the change of the specific resistance with respect to the standing time, and the specific resistance ratio is the positive characteristic thermistor substrate 1.
It is indicated by the maximum resistance value / minimum resistance value during operation.
一方,第7図に示すように,560℃の大気雰囲気中では
同じ特性に回復するまでに約10時間かかり,500℃の大気
雰囲気中では同様に140時間かかり,480℃では400時間か
かった。On the other hand, as shown in Fig. 7, it took about 10 hours to restore the same characteristics in the atmosphere of 560 ° C, 140 hours in the atmosphere of 500 ° C, and 400 hours in the atmosphere of 480 ° C.
このように,特性の回復に必要な時間は,雰囲気中の
温度を高くすれば短くなる。In this way, the time required to restore the characteristics becomes shorter if the temperature in the atmosphere is increased.
他方,480℃未満の温度でも時間を費やせば回復可能で
あるが,工業生産性等を考慮すると,本考案における雰
囲気温度は480℃以上の温度であることが好ましい。On the other hand, even if the temperature is lower than 480 ° C, it can be recovered by spending time. However, considering the industrial productivity, the atmospheric temperature in the present invention is preferably 480 ° C or higher.
しかし,回復時間を早めるためは雰囲気温度を上げ過
ぎると,ろう材が溶解して対向電極3とコルゲートフィ
ン5との接合部分が剥がれ易いので,コルゲートフィン
5間を挟持する等の工夫が必要であろう。However, if the ambient temperature is raised too high in order to accelerate the recovery time, the brazing material melts and the joint between the counter electrode 3 and the corrugated fin 5 is easily peeled off. Ah
従って,ろう材に合わせて480℃以上でろう付け温度
より多少高い温度の間で適当に選定すればよい。Therefore, appropriate selection may be made between 480 ° C and above, which is slightly higher than the brazing temperature, depending on the brazing material.
また,加熱雰囲気も大気雰囲気以上に加圧状態とする
ことによって大気圧時よりも回復時間を短くできるし,
酸素を増量させても大気雰囲気中よりも回復時間を短く
できる。Also, by setting the heating atmosphere at a pressure higher than that of the atmospheric atmosphere, the recovery time can be shortened compared to atmospheric pressure,
Even if the amount of oxygen is increased, the recovery time can be shorter than that in the atmosphere.
このため,大気圧以上の加圧中で480℃以上の温度に
加熱した酸化性雰囲気中で正特性サーミスタ基板1をさ
らすことが好ましい。Therefore, it is preferable to expose the PTC thermistor substrate 1 in an oxidizing atmosphere heated to a temperature of 480 ° C. or higher under a pressure of atmospheric pressure or higher.
上述した実施例は,本発明の一例であって,種々の形
状の正特性サーミスタ基板1やコルゲートフィン5にて
実施可能であり,真空容器15と酸化処理容器17は同一の
ものを用いてもよい。The above-described embodiment is an example of the present invention, and can be implemented with the PTC thermistor substrate 1 and the corrugated fins 5 having various shapes. Even if the vacuum vessel 15 and the oxidation treatment vessel 17 are the same, Good.
さらに,本発明の実施に当たっては,10-2Torr程度の
真空中に窒素ガス等のキャリアーガスを加えてろう付け
することも行われるが,要は非酸化性雰囲気中で,好ま
しくは露点−50℃以下の非酸化性雰囲気中でろう付けれ
ば本発明の目的達成が可能である。Furthermore, in carrying out the present invention, a carrier gas such as nitrogen gas may be added to a vacuum in a vacuum of about 10 -2 Torr for brazing, but the important point is that it is in a non-oxidizing atmosphere, preferably at a dew point of -50. The object of the present invention can be achieved by brazing in a non-oxidizing atmosphere at ℃ or below.
ところで,正特性サーミスタの製造におけるコルゲー
トフィン5の材料はアルミニウム以外,銅,鉄,これら
を主成分とした合金,又は鋼板に亜鉛,ニッケル,アル
ミニウムもしくは錫をメッキした材料が好適する。By the way, as the material of the corrugated fins 5 in the manufacture of the positive temperature coefficient thermistor, copper, iron, alloys containing these as a main component, or a material obtained by plating a steel plate with zinc, nickel, aluminum or tin is preferable in addition to aluminum.
対向電極3についてもアルミニウム以外に銅,亜鉛,
ニッケルもしくはこれらを主成分として合金材料が好適
し,これらに合わせてろう材を選定すればよい。As for the counter electrode 3, copper, zinc,
Nickel or an alloy material containing nickel as a main component is preferable, and a brazing material may be selected according to these.
なお,ろう付けは狭義の半田付けを含むものであり,
ろう材として半田材料が含まれる。Brazing includes soldering in a narrow sense,
A solder material is included as the brazing material.
以上説明したように本発明は,正特性サーミスタ基板
に形成した電極に,非酸化性雰囲気中で金属製放熱フィ
ンをろう付け固定した後,480℃以上の温度の酸化性雰囲
気中にその正特性サーミスタ基板をさらして製造するか
ら,ろう付促進用金属材料を混入させたろう付材料を用
いて非酸化性雰囲気中で金属製放熱フィンを対向電極に
ろう付けしても,PTC特性の回復された正特性サーミスタ
が得られるし,製造コストの上昇を抑えることが可能で
ある。As described above, according to the present invention, a metal radiation fin is brazed and fixed to an electrode formed on a PTC thermistor substrate in a non-oxidizing atmosphere, and then the PTC is exposed in an oxidizing atmosphere at a temperature of 480 ° C. or higher. Since the thermistor substrate is manufactured by exposing it, the PTC characteristics were recovered even if the metal radiation fin was brazed to the counter electrode in a non-oxidizing atmosphere using a brazing material mixed with a brazing promoting metal material. It is possible to obtain a positive temperature coefficient thermistor and suppress an increase in manufacturing cost.
第1図〜第3図は本発明に係るセラミックス部品の製造
方法の一実施例を示す断面図,第4図は本発明によって
製造された正特性サーミスタの斜視図,第5図は酸化性
雰囲気中で正特性サーミスタ基板を加熱した場合としな
い場合における発熱温度に対する比抵抗の関係を示すPT
C特性図,第6図は高温酸化処理とサーミスタ特性との
関係を説明するための特性図,第7図はPTC特性回復の
ために大気雰囲気中で温度を変化させた場合の回復時間
の関係を示す図,第8図および第9図は本発明の参考と
なる製造方法によって製造された正特性サーミスタの断
面図および要部部分断面図である。 1……正特性サーミスタ基板 3……対向電極 5……放熱フィン(コルゲートフィン) 7……フィンカバー 9……端子板 11……ろう材 15……真空容器 17……酸化処理容器1 to 3 are sectional views showing an embodiment of a method for manufacturing a ceramic component according to the present invention, FIG. 4 is a perspective view of a positive temperature coefficient thermistor manufactured according to the present invention, and FIG. 5 is an oxidizing atmosphere. PT showing the relationship of the specific resistance to the heat generation temperature when the PTC thermistor substrate is heated and when it is not heated.
C characteristic diagram, FIG. 6 is a characteristic diagram for explaining the relation between high temperature oxidation treatment and thermistor characteristic, and FIG. 7 is a relation of recovery time when the temperature is changed in the atmosphere to recover the PTC characteristic. FIG. 8, FIG. 8 and FIG. 9 are a sectional view and a partial sectional view of a main part of a positive temperature coefficient thermistor manufactured by a manufacturing method which is a reference of the present invention. 1 ... Positive characteristic thermistor substrate 3 ... Counter electrode 5 ... Radiating fin (corrugated fin) 7 ... Fin cover 9 ... Terminal plate 11 ... Brazing material 15 ... Vacuum container 17 ... Oxidation treatment container
Claims (1)
成する工程と, 非酸化性雰囲気中で前記電極に金属製放熱フィンをろう
付けして固定する工程と, 前記放熱フィンの固定後に,480℃以上の温度に加熱され
た酸化性雰囲気中に前記正特性サーミスタ基板をさらす
工程と, を有することを特徴とする正特性サーミスタの製造方
法。1. A step of forming an electrode on the opposite surface of a positive temperature coefficient thermistor substrate, a step of brazing and fixing a metal radiation fin to the electrode in a non-oxidizing atmosphere, and after the radiation fin is fixed, And a step of exposing the positive temperature coefficient thermistor substrate to an oxidizing atmosphere heated to a temperature of 480 ° C. or higher, and a method for manufacturing a positive temperature coefficient thermistor.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP872789A JPH0810643B2 (en) | 1989-01-19 | 1989-01-19 | Manufacturing method of positive temperature coefficient thermistor |
| DE68917259T DE68917259T2 (en) | 1988-11-07 | 1989-11-06 | Heater with positive temperature coefficient and method of manufacturing the same. |
| EP89120508A EP0368206B1 (en) | 1988-11-07 | 1989-11-06 | Positive-temperature-coefficient heating device and process for fabricating the same |
| CA002002319A CA2002319C (en) | 1988-11-07 | 1989-11-06 | Positive-temperature-coefficient heating device and process for fabricating the same |
| US07/627,813 US5077889A (en) | 1988-11-07 | 1990-12-14 | Process for fabricating a positive-temperature-coefficient heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP872789A JPH0810643B2 (en) | 1989-01-19 | 1989-01-19 | Manufacturing method of positive temperature coefficient thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02191303A JPH02191303A (en) | 1990-07-27 |
| JPH0810643B2 true JPH0810643B2 (en) | 1996-01-31 |
Family
ID=11700982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP872789A Expired - Lifetime JPH0810643B2 (en) | 1988-11-07 | 1989-01-19 | Manufacturing method of positive temperature coefficient thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0810643B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL121448A (en) * | 1997-08-01 | 2001-04-30 | A T C T Advanced Thermal Chips | Electrical ptc heating device |
| KR20060039287A (en) * | 2004-11-02 | 2006-05-08 | 동아전기부품 주식회사 | Preheater's PCC Receptor |
| WO2018130798A1 (en) | 2017-01-12 | 2018-07-19 | Dyson Technology Limited | A hand held appliance |
| GB2562276B (en) | 2017-05-10 | 2021-04-28 | Dyson Technology Ltd | A heater |
-
1989
- 1989-01-19 JP JP872789A patent/JPH0810643B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02191303A (en) | 1990-07-27 |
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