JPH0812933B2 - Method for manufacturing thermoelectric converter - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to the manufacture of a thermoelectric conversion device formed by unitizing thermoelectric conversion elements composed of N-type and P-type semiconductor pairs based on the Seebeck effect. It is about the method.

[Prior Art] This type of thermoelectric conversion element is used in many fields as a power generation device that uses local energy sources such as space development, ocean development, geothermal heat, and remote areas, or waste heat in homes and factories. Have the potential to

Among the thermoelectric conversion elements that have been developed so far (Fe
It is known that an element composed of a Co) Si _2- (FeMn) Si ₂ pair has high thermoelectric conversion efficiency and is inexpensive. However, since this type of thermoelectric conversion element generates a very small amount of electric power, a large number of elements are required to form a thermoelectric conversion device that generates the required electric power.

[Problems to be Solved by the Invention] On the other hand, in this thermoelectric conversion element, the mechanical strength of the joint surface between the N-type and P-type semiconductor pairs is weak, and in consideration of its reinforcing measures, its shape and size are inevitably large. Was becoming. Therefore, it was difficult to unitize this while maintaining a desired mechanical strength.

In order to eliminate the above-mentioned drawbacks, the present invention inserts a heat resistant insulating plate between an N-type and P-type semiconductor pair as a basic element to enhance its mechanical strength and facilitate the unitization of the basic element. The present invention provides a manufacturing method suitable for obtaining a high-power thermoelectric conversion device.

[Means for Solving the Problems] Therefore, in the method for manufacturing a thermoelectric conversion device according to the present invention, a film made of FeSi ₂ is formed on both surfaces of the first heat-resistant insulating thin plate, and both surfaces are N-type and The heat treatment is performed while sandwiching and constraining the P-type semiconductor sintered plates,
Of the heat-resistant insulating thin plate and the N-type semiconductor and the P-type semiconductor are fixed to each other to produce a basic element of a semiconductor thermocouple, and a plurality of the basic elements are laminated in a multilayer through the second heat-resistant insulating thin plate. A method of manufacturing a thermoelectric conversion device constituting a basic unit, wherein a cut is made in each of the first and second heat-resistant insulating thin plates at one longitudinal end thereof, and a conductor plate is fitted in the cut. The conductor plate of the first heat-resistant insulating thin plate is provided on both sides of the N-type semiconductor and P.
By connecting the semiconductor layers, and by stacking the conductor plates of the first heat-resistant insulating thin plate and the conductor plate of the second heat-resistant insulating thin plate on opposite sides of each other in multiple layers. The plurality of basic elements are connected in series by connecting the conductors of the second heat-resistant insulating thin plate between semiconductors of different polarities of the adjacent basic elements.

[Example] Referring to FIG. 1, a heat-resistant insulating plate having a thickness of 0.5 mm,
Make a cut of 3 mm in length and 6 mm in width at one end of the alumina / ceramic thin plate 1 having a width of 10 mm and a length of 30 mm in the longitudinal direction (Fig. A), and make a nickel plate 2 having the same shape and dimension as this cut.
And is called an alumina substrate 3 (Fig. B). A FeSi ₂ 4 film including a nickel plate 2 having a width of 6 mm is sputtered on both surfaces of the alumina substrate 3 to a thickness of several μm (FIG. C), and both surfaces thereof are (FeCo) Si ₂ 5 and (FeMn) Si.
It is sandwiched between ₂ 6 sintered plates (1 x 6 x 30 mm ³ ) and heated at 1000 ° C x 3 Hrs + 850 ° C x 100 Hrs while restrained by a restraint jig to convert the α phase (metal phase) to the β phase (semiconductor phase). Heat treatment for phase transformation is applied. The sandwich plate manufactured in this way is referred to as a basic element 7 (Fig. D). Since the FeSi ₂ 4 is interposed, the alumina substrate 3 and the (FeCo) Si ₂ 5 and (FeMn) Si ₂ 6 are tightly bonded, and the (FeCo) Si ₂ 5 is N-type,
(FeMn) a Si ₂ 6 semiconductor pairs to P-type is formed. Further, the nickel plate 2 electrically connects the N-type semiconductor and the P-type semiconductor.

Next, as shown in FIG. 2, the above-mentioned six alumina substrates 3 and five basic elements 7 are alternately stacked, and the nickel plate 2 on the basic element 7 side is made to be one side of the alumina plate in the longitudinal direction. The nickel plates 2 on the substrate 3 side are superposed so as to be positioned on the other end side in the longitudinal direction, respectively, so that the nickel plates 2 are electrically connected in series. That is, the basic element 7
, The N-type semiconductor and the P-type semiconductor are connected by the nickel plate 2 of the basic element 7 at one end in the longitudinal direction, and the alumina substrate 3 side is located between the semiconductors of different polarities in the adjacent basic elements 7 at the other end in the longitudinal direction. The plurality of basic elements 7 are connected in series by being connected by the nickel plate 2. Hereinafter, this is referred to as a basic unit 7 '.

FIG. 3 shows a thermoelectric conversion device made by electrically connecting four basic units 7'in series.

As shown in FIG. 4, a chimney-shaped recess in the center of this device.
By heating 10 with the Bunsen lamp 11 and applying a temperature difference of 800 ° C. to the basic element, a thermoelectromotive force with a large output could be obtained.

[Advantages of the Invention] It is possible to obtain a large electromotive force with high mechanical strength.

[Brief description of drawings]

1 (a) to 1 (d) show an outline of a method for manufacturing a basic element of a thermoelectric conversion device according to the present invention. FIG. 2 shows a basic unit composed of a plurality of basic elements and an alumina substrate. FIG. 2A is a plan view, FIG. 2B is a left side view, and FIG.
Shows a front view, FIG. 7 (d) shows a right side view, and FIG. 10 (e) shows a bottom view. FIG. 3 shows a plan view of a thermoelectric converter according to the present invention, which is composed of basic units. FIG. 4 shows a usage state of the thermoelectric conversion device. In the figure, 1 ... Alumina-ceramic thin plate, 2 ... Nickel plate,
3 …… Alumina substrate, 4 …… FeSi ₂ , 5 …… (FeCo) Si ₂
Sintered plate, 6 ... (FeMn) Si ₂ sintered plate, 7 ... Basic element, 7 '... Basic unit, 8 ... Mounting base, 9 ... Heat resistant insulating material, 11 ... Bunsen lamp .

Claims (1)

[Claims] 1. A first heat-resistant insulating thin plate having Fe on each side.
A film made of Si ₂ is formed, and both surfaces thereof are sandwiched between sintered plates of N-type and P-type semiconductors and heat-treated while restraining the first heat-resistant insulating thin plate and the N-type semiconductors and P-type semiconductors. A method for manufacturing a thermoelectric conversion device, in which a basic element of a semiconductor thermocouple is manufactured by fixing to each other and a plurality of the basic elements are laminated in multiple layers via a second heat-resistant insulating thin plate to form a basic unit. The first and second heat-resistant insulating thin plates each have a notch on one end side in the longitudinal direction, and a conductor plate is fitted into the notch.
Said conductor plate of said heat-resistant insulating thin plate connects between said N-type semiconductor and P-type semiconductor on both sides, said conductor plate of said first heat-resistant insulating thin plate and said second heat-resistant insulating thin plate By stacking the conductor plates in multiple layers so that the positions of the conductor plates are opposite to each other, the conductor plates of the second heat-resistant insulating thin plate connect between semiconductors of different polarities of the basic elements adjacent to each other, and A method for manufacturing a thermoelectric conversion device, wherein basic elements are connected in series.