JPH0815005B2 - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH0815005B2 JPH0815005B2 JP61178436A JP17843686A JPH0815005B2 JP H0815005 B2 JPH0815005 B2 JP H0815005B2 JP 61178436 A JP61178436 A JP 61178436A JP 17843686 A JP17843686 A JP 17843686A JP H0815005 B2 JPH0815005 B2 JP H0815005B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- mol
- less
- exceeds
- preferable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title description 14
- 229910052573 porcelain Inorganic materials 0.000 title description 6
- 239000011521 glass Substances 0.000 claims description 14
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 12
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910002367 SrTiO Inorganic materials 0.000 claims description 6
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 4
- 238000005245 sintering Methods 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は誘電体磁器組成物に関し、特に高い誘電率
を有する誘電体磁器組成物に関する。TECHNICAL FIELD The present invention relates to a dielectric ceramic composition, and particularly to a dielectric ceramic composition having a high dielectric constant.
（従来技術） 従来、この種の誘電体磁器組成物としては、BaTiO3系
磁器やSrTiO3−PbTiO3−Bi2O3−TiO2などを基本成分と
する磁器が用いられていた。(Prior Art) Conventionally, as a dielectric ceramic composition of this type, a BaTiO 3 -based ceramic, a SrTiO 3 —PbTiO 3 —Bi 2 O 3 —TiO 2 or the like as a basic component has been used.
（発明が解決しようとする問題点） しかしながら、BaTiO3系磁器は静電容量の電圧依存性
が大きく、たとえば厚さ1mm当たり２〜5kVの高圧直流電
圧を印加すると、静電容量は−20〜−80％変化するとい
う欠点を有していた。(Problems to be Solved by the Invention) However, BaTiO 3 system porcelain has a large capacitance voltage dependency, and for example, when a high voltage DC voltage of 2 to 5 kV per 1 mm of thickness is applied, the capacitance becomes -20 to It had the drawback of a -80% change.
また、SrTiO3−PbTiO3−Bi2O3−TiO2などを基本成分
とする磁器は、BaTiO3系磁器に比べて静電容量の電圧依
存性は小さいが、誘電率の温度変化率は大きく、さら
に、最適な誘電特性を得るための焼成温度が1200〜1350
℃と高いため、たとえば積層コンデンサを作成する場合
には、その内部電極として高融点を有する白金などの高
価な貴金属を使用しなければならなかった。In addition, the porcelain containing SrTiO 3 -PbTiO 3 -Bi 2 O 3 -TiO 2 as a basic component has a smaller voltage dependence of the capacitance than the BaTiO 3 -based porcelain, but has a large temperature change rate of the dielectric constant. In addition, the firing temperature for optimal dielectric properties is 1200-1350
Since the temperature is as high as ℃, for example, when manufacturing a multilayer capacitor, an expensive noble metal such as platinum having a high melting point must be used as an internal electrode thereof.
それゆえに、この発明の主たる目的は、誘電率が高
く、静電容量の電圧依存性と誘電率の温度変化率とがと
もに小さく、しかも、焼結温度が低い、誘電体磁器組成
物を提供することである。Therefore, the main object of the present invention is to provide a dielectric porcelain composition having a high dielectric constant, a small voltage dependency of capacitance and a small temperature change rate of the dielectric constant, and a low sintering temperature. That is.
（問題点を解決するための手段） この発明は、SrTiO3を25〜50重量％、PbTiO3を10〜35
重量％、CaTiO3を５〜20重量％、Bi2O3を５〜35重量
％、TiO2を５〜18重量％、およびMnO2を0.02〜0.50重量
％含む主成分に対して、ガラス成分を0.2〜15重量％添
加してなり、かつ、ガラス成分は、Li2Ｏを10〜45モル
％、BaO,MgO,CaOおよびSrOのうち少なくとも１種を５〜
40モル％、SiO2およびTiO2をあわせて30〜70モル％（た
だし、SiO2は15モル％以上含まれる）、およびCuOを１
〜35モル％含む、誘電体磁器組成物である。The present invention (means for solving the problem), a SrTiO 3 25 to 50 wt%, a PbTiO 3 10 to 35
% By weight, 5 to 20% by weight of CaTiO 3 , 5 to 35% by weight of Bi 2 O 3 , 5 to 18% by weight of TiO 2 , and 0.02 to 0.50% by weight of MnO 2, with respect to the glass component. Is added in an amount of 0.2 to 15% by weight, and the glass component contains Li 2 O in an amount of 10 to 45 mol% and at least one of BaO, MgO, CaO and SrO in an amount of 5 to 5%.
40 mol%, 30 to 70 mol% in total of SiO 2 and TiO 2 (however, SiO 2 is contained in 15 mol% or more), and CuO 1
A dielectric ceramic composition containing ˜35 mol%.
（発明の効果） この発明によれば、500以上の誘電率と1.5％以下の誘
電損失とを有し、5kV/mmの直流電圧を印加した際の誘電
率の変化率が−15％以下と小さく、また、温度による誘
電率の変化率も小さい誘電体磁器組成物を得ることがで
きる。(Effect of the Invention) According to the present invention, the dielectric constant is 500 or more and the dielectric loss is 1.5% or less, and the change rate of the dielectric constant when a DC voltage of 5 kV / mm is applied is -15% or less. It is possible to obtain a dielectric ceramic composition that is small and has a small rate of change in dielectric constant with temperature.
また、この発明の組成物は、焼成温度が1100℃前後と
低いため、焼成コストが安くつき、たとえば積層コンデ
ンサなどを作成しても、その内部電極として白金などの
貴金属を用いなくてすむ。Further, since the composition of the present invention has a low baking temperature of around 1100 ° C., it has a low baking cost and does not need to use a noble metal such as platinum as an internal electrode even when a multilayer capacitor is manufactured.
この発明の上述の目的，その他の目的，特徴および利
点は、以下の実施例の詳細な説明から一層明らかとなろ
う。The above-mentioned objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the embodiments below.
（実施例） 主成分の原料としてSrCO3，Pb3O4,CaCO3，Bi2O3，TiO
2およびMnO2を別表１の組成になるように秤量し混合し
た。この混合物をアルミナボールとともにポリエチレン
ポットに入れ16時間湿式混合し粉砕した。この粉砕物を
脱水乾燥した後、ジルコニア質の匣に入れ、950℃で２
時間仮焼した。この仮焼物100重量部に対して、別表２
に示した組成のガラス成分を、別表１に示した重量％だ
け添加し、さらに、バインダを加えてポリエチレンポッ
トで16時間湿式混合した。この混合物を蒸発乾燥し整粒
した後、加圧して直径10mm,厚さ1.2mmの円板に成形し
た。この成形物を980〜1250℃で２時間焼成し、得られ
た磁器の両主面に銀ペーストを塗布し、800℃で焼き付
けて電極を形成して試料とした。SrCO 3 as a raw material (Example) composed mainly, Pb 3 O 4, CaCO 3 , Bi 2 O 3, TiO
2 and MnO 2 were weighed and mixed so as to have the composition shown in Table 1. This mixture was put in a polyethylene pot together with alumina balls and wet-mixed for 16 hours to be ground. After dewatering and drying this crushed product, put it in a zirconia-like box and leave it at 950 ° C for 2
I calcined for an hour. For 100 parts by weight of this calcinated product, Appendix 2
The glass component having the composition shown in Table 1 was added by the weight% shown in Appendix 1, a binder was further added, and the mixture was wet mixed in a polyethylene pot for 16 hours. The mixture was evaporated to dryness and sized, and then pressed to form a disk having a diameter of 10 mm and a thickness of 1.2 mm. This molded product was baked at 980 to 1250 ° C. for 2 hours, silver paste was applied to both main surfaces of the obtained porcelain, and baked at 800 ° C. to form an electrode, which was used as a sample.
このようにして得た各試料の特性を、次のような条件
や測定方法によって測定し、別表３にその結果を示し
た。The characteristics of each sample thus obtained were measured under the following conditions and measurement methods, and the results are shown in Appendix 3.
（１）焼成温度 （２）誘電率:1kHz,1V,温度20℃の条件。(1) Firing temperature (2) Dielectric constant: 1kHz, 1V, temperature 20 ° C.
（３）誘電損失:1kHz,1V,温度20℃の条件での損失係数t
anδの値。(3) Dielectric loss: Loss factor t under the condition of 1kHz, 1V, temperature 20 ℃
The value of anδ.
（４）バイアス特性:5kV/mmの直流電圧を印加したとき
の誘電率の変化率の値。(4) Bias characteristic: The value of the rate of change of the dielectric constant when a DC voltage of 5 kV / mm is applied.
（５）温度特性：−25℃〜＋85℃の温度範囲において、
誘電率を測定し、＋20℃の誘電率に対する変化率の最大
値。(5) Temperature characteristics: In the temperature range of -25 ℃ to + 85 ℃,
The maximum value of the rate of change with respect to the dielectric constant of + 20 ° C after measuring the dielectric constant.
なお、別表１ないし別表３中で＊印を付したものはこ
の発明の範囲外のものであり、それ以外のものはこの発
明の範囲内のものである。In addition, in Tables 1 to 3, those marked with * are outside the scope of the present invention, and others are within the scope of the present invention.
別表１ないし別表３からもその一部が明らかなよう
に、この発明の組成の限定理由は次の通りである。As partially shown in the attached tables 1 to 3, the reasons for limiting the composition of the present invention are as follows.
（１）SrTiO3の添加が25重量％未満では、誘電損失が1.
5％を超えかつバイアス特性が悪くなるので好ましくな
い。また、SrTiO3の添加が50重量％を超えると誘電率が
500未満となり好ましくない。(1) If the addition of SrTiO 3 is less than 25% by weight, the dielectric loss is 1.
It exceeds 5% and the bias characteristics deteriorate, which is not preferable. Moreover, if the addition of SrTiO 3 exceeds 50% by weight, the dielectric constant becomes
It is less than 500, which is not preferable.
（２）PbTiO3の添加が10重量％未満では、誘電率が500
未満となり好ましくない。また、PbTiO3の添加が35重量
％を超えると誘電損失が1.5％を超えかつバイアス特性
が悪くなるので好ましくない。(2) If the addition of PbTiO 3 is less than 10% by weight, the dielectric constant will be 500.
It is less than less than desirable. Further, if the addition amount of PbTiO 3 exceeds 35% by weight, the dielectric loss exceeds 1.5% and the bias characteristics deteriorate, which is not preferable.
（３）CaTiO3の添加が５重量％未満では、誘電損失が1.
5％を超えかつバイアス特性が悪くなるので好ましくな
い。また、CaTiO3が20重量％を超えると誘電率が500未
満となり好ましくない。(3) If CaTiO 3 is added less than 5% by weight, the dielectric loss is 1.
It exceeds 5% and the bias characteristics deteriorate, which is not preferable. Further, when CaTiO 3 exceeds 20% by weight, the dielectric constant is less than 500, which is not preferable.
（４）Bi2O3の添加が５重量％未満では、誘電率が500未
満となり好ましくない。また、Bi2O3の添加が35重量％
を超えると誘電損失が1.5％を超えるので好ましくな
い。(4) If the addition of Bi 2 O 3 is less than 5% by weight, the dielectric constant is less than 500, which is not preferable. Also, the addition of Bi 2 O 3 is 35% by weight.
If it exceeds, the dielectric loss exceeds 1.5%, which is not preferable.
（５）TiO2の添加が５重量％未満では、誘電率が500未
満となり好ましくない。また、TiO2の添加が18重量％を
超えると誘電損失が1.5％を超えるので好ましくない。(5) If the addition of TiO 2 is less than 5% by weight, the dielectric constant is less than 500, which is not preferable. Further, if the addition of TiO 2 exceeds 18% by weight, the dielectric loss exceeds 1.5%, which is not preferable.
（６）MnO2の添加が0.02重量％未満では、誘電損失が1.
5％を超え好ましくない。また、MnO2の添加が0.50重量
％を超えると焼結性が悪くなり好ましくない。(6) If the amount of MnO 2 added is less than 0.02% by weight, the dielectric loss will be 1.
Over 5% is not preferable. If the amount of MnO 2 added exceeds 0.50% by weight, the sinterability is deteriorated, which is not preferable.
（７）ガラス成分の添加が主成分に対して0.2重量％未
満では焼結温度が1100℃を超え好ましくない（試料番号
20,試料番号21および試料番号22参照）。また、ガラス
成分の添加が主成分に対して15重量％を超えると焼結体
が多孔質となりかつ誘電率が500未満となり好ましくな
い（試料番号23,試料番号24および試料番号25参照）。(7) If the addition of the glass component is less than 0.2% by weight with respect to the main component, the sintering temperature exceeds 1100 ° C, which is not preferable (Sample No.
20, Sample No. 21 and Sample No. 22). Further, if the addition of the glass component exceeds 15% by weight based on the main component, the sintered body becomes porous and the dielectric constant is less than 500, which is not preferable (see Sample No. 23, Sample No. 24 and Sample No. 25).
（８）添加するガラス成分中のLi2Ｏが10モル％未満で
は、焼結温度が1100℃を超え好ましくない（試料番号26
参照）。またLi2Ｏが45モル％超えると、ガラス成分の
溶融温度が800℃未満となり、ガラス成分が焼結助剤と
しての役割を果たせないので好ましくない。(8) When the Li 2 O content in the glass component to be added is less than 10 mol%, the sintering temperature exceeds 1100 ° C, which is not preferable (Sample No. 26
reference). Further, when Li 2 O exceeds 45 mol%, the melting temperature of the glass component becomes less than 800 ° C., and the glass component cannot serve as a sintering aid, which is not preferable.
（９）添加するガラス成分中に、BaO,MgO,CaOおよびSrO
のうち少なくとも１種が含まれる場合、これらが５モル
％未満では、またこれらが40モル％を超えると、焼結温
度が1100℃を超えるので好ましくない（試料番号27およ
び試料番号28参照）。(9) BaO, MgO, CaO and SrO in the added glass component
If at least one of them is contained, if it is less than 5 mol%, or if it exceeds 40 mol%, the sintering temperature exceeds 1100 ° C., which is not preferable (see Sample No. 27 and Sample No. 28).
（10）添加するガラス成分中のSiO2およびTiO2が合わせ
て30モル％未満では、またこれらが合わせて70モル％を
超えると、焼結温度が1100℃を超えるので好ましくな
い。(10) If the total amount of SiO 2 and TiO 2 in the added glass component is less than 30 mol%, or if the total amount of these exceeds 70 mol%, the sintering temperature exceeds 1100 ° C., which is not preferable.
添加するガラス成分中のSiO2およびTiO2のうち、SiO2
が15モル％未満では、また、TiO2が含まれないと、焼結
温度の低減化を行うことができない（試料番号29および
試料番号30参照）。Of the SiO 2 and TiO 2 in the added glass component, SiO 2
Is less than 15 mol%, and if TiO 2 is not contained, the sintering temperature cannot be reduced (see sample numbers 29 and 30).
ガラス成分中にCuOを添加すると、誘電損失および温
度特性を減少させることができる。しかし、CuOの添加
が１モル％未満では、Tanδが1.5％を超えるので好まし
くない。またCuOの添加が35モル％を超えると、データ
としては示さなかったが絶縁抵抗が小さくなるので好ま
しくない。Addition of CuO to the glass component can reduce dielectric loss and temperature characteristics. However, if CuO is added less than 1 mol%, Tan δ exceeds 1.5%, which is not preferable. Further, if the addition of CuO exceeds 35 mol%, although not shown as data, the insulation resistance becomes small, which is not preferable.
Claims (1)
分を0.2〜15重量％添加してなり、かつ、前記ガラス成
分は、 Li2Ｏを10〜45モル％、 BaO,MgO,CaOおよびSrOのうち少なくとも１種を５〜40モ
ル％、 SiO2およびTiO2をあわせて30〜70モル％（ただし、SiO2
は15モル％以上含まれる）、および CuOを１〜35モル％含む、誘電体磁器組成物。1. SrTiO 3 25 to 50% by weight, PbTiO 3 10 to 35% by weight, CaTiO 3 5 to 20% by weight, Bi 2 O 3 5 to 35% by weight, TiO 2 5 to 18% by weight. %, And 0.2 to 15% by weight of a glass component with respect to the main component containing 0.02 to 0.50% by weight of MnO 2 , and the glass component is 10 to 45 mol% of Li 2 O, BaO, 5 to 40 mol% of at least one of MgO, CaO and SrO, and 30 to 70 mol% of SiO 2 and TiO 2 in combination (provided that SiO 2
Is contained in an amount of 15 mol% or more) and CuO in an amount of 1 to 35 mol%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178436A JPH0815005B2 (en) | 1986-07-28 | 1986-07-28 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178436A JPH0815005B2 (en) | 1986-07-28 | 1986-07-28 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6334802A JPS6334802A (en) | 1988-02-15 |
| JPH0815005B2 true JPH0815005B2 (en) | 1996-02-14 |
Family
ID=16048483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61178436A Expired - Fee Related JPH0815005B2 (en) | 1986-07-28 | 1986-07-28 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0815005B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0581481B1 (en) * | 1992-07-31 | 1997-04-23 | Toyota Jidosha Kabushiki Kaisha | Bismuth layer compound |
| US6266230B1 (en) | 1998-06-29 | 2001-07-24 | Matsushita Electric Industrial Co., Ltd. | Multilayer ceramic capacitor |
-
1986
- 1986-07-28 JP JP61178436A patent/JPH0815005B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6334802A (en) | 1988-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0745337B2 (en) | Dielectric porcelain composition | |
| JP3305626B2 (en) | Dielectric porcelain composition and ceramic electronic component using this dielectric porcelain composition | |
| JPH0414442B2 (en) | ||
| JPH0815005B2 (en) | Dielectric porcelain composition | |
| JPS5820133B2 (en) | Porcelain for semiconductor porcelain capacitors and manufacturing method thereof | |
| JPS6133249B2 (en) | ||
| JP3179830B2 (en) | Dielectric porcelain composition | |
| JPS6256361A (en) | Dielectric ceramic composition | |
| JPH0571538B2 (en) | ||
| JP2737277B2 (en) | Dielectric porcelain composition | |
| JPS6117087B2 (en) | ||
| JPH1095667A (en) | Dielectric ceramic composition and ceramic capacitor | |
| JP2643197B2 (en) | Dielectric porcelain composition | |
| JPH0459265B2 (en) | ||
| JPH0585804A (en) | Dielectric porcelain composition | |
| JPS6031793B2 (en) | dielectric porcelain composition | |
| JPS6258128B2 (en) | ||
| JPH05846B2 (en) | ||
| JPS6133250B2 (en) | ||
| JPH0510764B2 (en) | ||
| JPH08119734A (en) | Dielectric ceramic composition | |
| JPS62276705A (en) | Dielectric ceramic composition | |
| JPH06290636A (en) | Dielectric porcelain composite | |
| JPH08119736A (en) | Dielectric ceramic composition | |
| JPS6217368B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |