JPH0815009B2 - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH0815009B2 JPH0815009B2 JP62054854A JP5485487A JPH0815009B2 JP H0815009 B2 JPH0815009 B2 JP H0815009B2 JP 62054854 A JP62054854 A JP 62054854A JP 5485487 A JP5485487 A JP 5485487A JP H0815009 B2 JPH0815009 B2 JP H0815009B2
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- 239000000203 mixture Substances 0.000 title claims description 39
- 229910052573 porcelain Inorganic materials 0.000 title description 3
- 239000000919 ceramic Substances 0.000 claims description 13
- 238000010304 firing Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) この発明は誘電体磁器組成物に関し、特に積層コンデ
ンサなどの誘電体材料として好適な誘電体磁器組成物に
関する。TECHNICAL FIELD The present invention relates to a dielectric ceramic composition, and particularly to a dielectric ceramic composition suitable as a dielectric material such as a multilayer capacitor.
(従来技術) 従来、高誘電率系の磁器コンデンサ材料としてBaTiO3
を主体とした誘電体磁器組成物がある。(Prior Art) Conventionally, BaTiO 3 has been used as a high dielectric constant porcelain capacitor material.
There is a dielectric ceramic composition mainly composed of
(発明が解決しようとする問題点) このような従来の誘電体磁器組成物では、温度変化に
対する静電容量値の変化率がJIS規格のB特性(+20℃
における静電容量値C20を基準とした−25℃〜+85℃に
おける静電容量値の変化率ΔC/C20が±10%以内にある
特性)を満足すれば、室温での誘電率が2,000と低い。(Problems to be solved by the invention) In such a conventional dielectric ceramic composition, the rate of change of the capacitance value with respect to the temperature change is the B characteristic of JIS standard (+ 20 ° C).
Is satisfied characteristic) that the rate of change [Delta] C / C 20 of the electrostatic capacitance value is within 10% ± at -25 ℃ ~ + 85 ℃ relative to the capacitance value C 20, is a dielectric constant at room temperature of 2,000 in And low.
さらに、これらの従来の誘電体組成物は、その焼結温
度が1,300〜1,400℃と高い欠点を有していた。そのた
め、焼成コストが高くつく。しかも、そのような従来の
誘電体磁器組成物を用いて積層磁器コンデンサを製造す
れば、その内部電極の材料として、1,300℃以上の高温
においても溶融したり酸化したりせずかつ誘電体と反応
することのない高融点の貴金属類、たとえば白金やパラ
ジウムなどの高価な材料を用いなければならなかった。Further, these conventional dielectric compositions have the drawback that the sintering temperature is as high as 1,300 to 1,400 ° C. Therefore, the firing cost is high. Moreover, when a laminated ceramic capacitor is manufactured using such a conventional dielectric ceramic composition, it does not melt or oxidize even at a high temperature of 1,300 ° C. or more and does not react with the dielectric material as a material for the internal electrodes. It was necessary to use expensive high melting point precious metals such as platinum and palladium.
また、従来、焼結温度が1,100℃以下でかつ比誘電率
が10,000以上である、鉛成分を有する複合ペロブスカイ
ト構造の誘電体磁器組成物が知られている。しかし、こ
れらは、温度変化に対する静電容量値の変化率が大き
い。Further, conventionally, a dielectric ceramic composition having a lead component and a composite perovskite structure, which has a sintering temperature of 1,100 ° C. or less and a relative dielectric constant of 10,000 or more, is known. However, these have a large rate of change in the capacitance value with respect to temperature changes.
そのため、従来、焼成時の鉛の揮発量を少なくし安定
に焼成するために1,000℃以下で焼成でき、しかも、誘
電率が高くかつ温度変化に対する静電容量値の変化率が
小さい、誘電体磁器組成物が望まれていた。For this reason, conventionally, dielectric ceramics that can be fired at 1,000 ° C or less to reduce the volatilization amount of lead during firing and can be fired at 1,000 ° C or less, and have a small rate of change in capacitance value with temperature change A composition was desired.
それゆえに、この発明の主たる目的は、焼成温度が90
0〜1,000℃と低くかつ誘電率が5,000以上と高くしかも
温度変化に対する静電容量値の変化率が小さい、誘電体
磁器組成物を提供することである。Therefore, the main object of the present invention is that the firing temperature is 90%.
It is intended to provide a dielectric ceramic composition having a low value of 0 to 1,000 ° C., a high dielectric constant of 5,000 or more, and a small rate of change in capacitance value with respect to temperature change.
(問題点を解決するための手段) この発明は、一般式XPb(Mg1/2W1/2)O3−YPbTiO3−Z
PbZrO3で表されるモル%X,YおよびZ(ただし、X+Y
+Z=100)が、次の各点A,B,CおよびD(モル%X,モル
%Y,モル%Z) A(52.0,44.0,4.0) B(47.0,38.0,15.0) C(42.0,41.0,17.0) D(46.0,48.0,6.0) を頂点とした多角形で囲まれる範囲にある組成のうちPb
の一部を、Ba,SrおよびCaの中から選択された少なくと
も1種以上で0.5〜10モル%置換した主成分に、100重量
部の主成分に対して、副成分としてMgOおよびZnOの一方
を0.3〜4.0重量部含有した、誘電体磁器組成物である。The present invention (means for solving the problem) is the general formula XPb (Mg 1/2 W 1/2) O 3 -YPbTiO 3 -Z
Mol% X, Y and Z represented by PbZrO 3 (provided that X + Y
+ Z = 100) is the following points A, B, C and D (mol% X, mol% Y, mol% Z) A (52.0,44.0,4.0) B (47.0,38.0,15.0) C (42.0, 41.0,17.0) Pb of the composition within the range enclosed by the polygon with D (46.0,48.0,6.0) as the vertex
Of the main component obtained by substituting 0.5 to 10 mol% of at least one selected from Ba, Sr, and Ca for 100 parts by weight of the main component and one of MgO and ZnO as a subcomponent. Is a dielectric porcelain composition containing 0.3 to 4.0 parts by weight.
(発明の効果) この発明によれば、焼成温度が900〜1,000℃と低くかつ
誘電率が5,000以上と高くしかも温度変化に対する静電
容量値の変化率がJIS規格のB特性(+20℃における静
電容量値C20を基準とした−25℃〜+85℃における静電
容量値の変化率ΔC/C20が±10%以内にある特性)を満
足する、誘電体磁器組成物が得られる。(Effect of the Invention) According to this invention, the firing temperature is as low as 900 to 1,000 ° C., the dielectric constant is as high as 5,000 or more, and the rate of change of the capacitance value with respect to temperature change is JIS standard B characteristic (static at + 20 ° C.). the rate of change [Delta] C / C 20 of the electrostatic capacitance value satisfies certain characteristics) within 10% ± at -25 ℃ ~ + 85 ℃ relative to the capacitance value C 20, dielectric ceramic composition is obtained.
この発明の上述の目的,その他の目的,特徴および利
点は、図面を参照して行う以下の実施例の詳細な説明か
ら一層明らかとなろう。The above-mentioned objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of the embodiments with reference to the drawings.
(実施例) まず、出発原料として、工業用のPb3O4,MgO,WO3,TiO
2,ZrO2,BaCO3,SrCO3,CaCO3,ZnOおよびMnO2を準備し
た。そして、仮焼すれば主成分および副成分の重量比率
が別表1に示す重量比率になるように、これらの原料を
秤量し、それらをボールミルによって湿式混合を行った
後蒸発乾燥して、粉末混合物を得た。(Example) First, as a starting material, industrial Pb 3 O 4 , MgO, WO 3 , and TiO 2 were used.
2 , ZrO 2 , BaCO 3 , SrCO 3 , CaCO 3 , ZnO and MnO 2 were prepared. Then, if calcined, these raw materials are weighed so that the weight ratio of the main component and the sub-component becomes the weight ratio shown in the attached table 1, they are wet-mixed by a ball mill, and then evaporated and dried to obtain a powder mixture. Got
次に、粉末混合物を750℃で2時間仮焼し、所定の化
合物粉体を得た。Next, the powder mixture was calcined at 750 ° C. for 2 hours to obtain a predetermined compound powder.
得られた化合物粉体に結合剤としての酢酸ビニル系バ
インダを5重量部加えた後、それらをボールミルによっ
て湿式混合して混合物を得た。After adding 5 parts by weight of a vinyl acetate binder as a binder to the obtained compound powder, they were wet-mixed with a ball mill to obtain a mixture.
その後、混合物を蒸発乾燥してから整粒して粉末原料
を作り、この粉末原料を2.5ton/cm2の圧力で直径10mm,
厚さ1.2mmの円板状に成形して成形物を得た。Then, they make a powder raw material was sized The mixture was evaporated to dryness, 10mm diameter of the powder raw material at a pressure of 2.5 ton / cm 2,
A 1.2 mm thick disc was formed to obtain a molded product.
この円板状の成形物を、Pb雰囲気を有する電気炉中
で、別表2に示す最適な各焼成温度で2時間焼成した。This disk-shaped molded product was fired in an electric furnace having a Pb atmosphere at the optimum firing temperature shown in Appendix 2 for 2 hours.
それから、焼成物の両面にAgペーストを800℃で焼き
付けて電極を形成し、試料1〜33とした。Then, Ag paste was baked on both surfaces of the fired product at 800 ° C. to form electrodes, and samples 1-33 were prepared.
そして、各試料について、誘電率εおよび誘電損失ta
nδを1kHz,1Vrms,20℃の条件で測定した。さらに、各試
料について、+20℃における静電容量値C20を基準とし
た−25℃〜+85℃における温度変化に対する静電容量値
の変化率ΔC/C20を測定した。これらの測定結果を別表
2に示した。なお、別表2では、特性の悪い数値に下線
を付した。この場合、焼成温度については1,000℃を超
えるものを、誘電率については5,000未満のものを、誘
電損失については1%より大きいものを、温度変化に対
する静電容量値の変化率ΔC/C20については±10%の範
囲外のものを、それぞれ、特性の悪い数値として示し
た。Then, for each sample, the dielectric constant ε and the dielectric loss ta
nδ was measured under the conditions of 1kHz, 1Vrms, and 20 ℃. Further, for each sample, the rate of change ΔC / C 20 of the capacitance value with respect to the temperature change from −25 ° C. to + 85 ° C. was measured with the capacitance value C 20 at + 20 ° C. as a reference. Table 2 shows the measurement results. In Appendix 2, numerical values with poor characteristics are underlined. In this case, the firing temperature should be over 1,000 ° C, the dielectric constant should be less than 5,000, the dielectric loss should be more than 1%, and the change rate of the capacitance value with respect to temperature change should be ΔC / C 20 . Shows values outside the range of ± 10% as poor numerical values.
さらに、図面に、各試料の主成分となるべきPb(Mg
1/2W1/2)O3,PbTiO3およびPbZrO3の3成分の組成の配
合比を表す3成分組成図(3角図)を示した。なお、こ
の図面において丸印を付した番号は各試料番号を表す。
また、この図面に、この発明の範囲にある主成分となる
べき組成の配合比を表す領域を頂点A,B,CおよびDを有
する多角形で表した。In addition, Pb (Mg
A three-component composition diagram (triangle diagram) showing the composition ratio of the three component compositions of 1/2 W 1/2 ) O 3 , PbTiO 3 and PbZrO 3 is shown. In this drawing, the circled numbers represent the sample numbers.
Further, in this drawing, the region representing the composition ratio of the composition to be the main component within the scope of the present invention is represented by a polygon having vertices A, B, C and D.
すなわち、この発明の範囲にある組成物は、一般式XP
b(Mg1/2W1/2)O3−YPbTiO3−ZPbZrO3で表されるモル%
X,YおよびZ(ただし、X+Y+Z=100)が、次の各点
A,B,CおよびD(モル%X,モル%Y,モル%Z) A(52.0,44.0,4.0) B(47.0,38.0,15.0) C(42.0,41.0,17.0) D(46.0,48.0,6.0) を頂点とした多角形で囲まれる範囲にある組成のうちPb
の一部を、Ba,SrおよびCaの中から選択された少なくと
も1種以上で0.5〜10モル%置換した主成分に、100重量
部の主成分に対して、副成分としてMgOおよびZnOの一方
を0.3〜4.0重量部含有し、さらに、MnをMnO2に換算して
0〜2.0重量部含有した、誘電体磁器組成物である。That is, compositions within the scope of this invention have the general formula XP
b (Mg 1/2 W 1/2 ) O 3 -YPbTiO 3 -ZPbZrO 3 mol%
X, Y and Z (where X + Y + Z = 100) are the following points
A, B, C and D (mol% X, mol% Y, mol% Z) A (52.0,44.0,4.0) B (47.0,38.0,15.0) C (42.0,41.0,17.0) D (46.0,48.0, Of the composition within the range surrounded by the polygon with 6.0) as the vertex
Of the main component obtained by substituting 0.5 to 10 mol% of at least one selected from Ba, Sr, and Ca for 100 parts by weight of the main component and one of MgO and ZnO as a subcomponent. the containing 0.3 to 4.0 parts by weight, further, Mn was contained 0 to 2.0 parts by weight in terms of MnO 2, a dielectric ceramic composition.
この発明にかかる誘電体磁器組成物を上述の範囲に限
定したのは、次の理由による。The reason why the dielectric ceramic composition according to the present invention is limited to the above range is as follows.
つまり、試料番号2のように図面に示す組成点Aおよ
びBを結ぶ線分の外側の組成領域では、誘電率が5,000
より低くかつ温度変化に対する静電容量値の変化率がJI
S規格のB特性を満足しないので好ましくない。In other words, in the composition region outside the line segment connecting the composition points A and B shown in the drawing like sample number 2, the dielectric constant is 5,000.
It is lower and the rate of change of capacitance value with temperature change is JI.
It is not preferable because it does not satisfy the B characteristics of the S standard.
また、試料番号9および10のように、組成点BとCと
を結ぶ線分の外側の組成領域および組成点CとDとを結
ぶ線分の外側の組成領域では、温度変化に対する静電容
量値の変化率がJIS規格のB特性を満足しないので好ま
しくない。Further, in the composition region outside the line segment connecting the composition points B and C and the composition region outside the line segment connecting the composition points C and D, as in sample numbers 9 and 10, the capacitance with respect to the temperature change is obtained. It is not preferable because the rate of change of the value does not satisfy the JIS standard B characteristics.
試料番号3のように、組成点DとAとを結ぶ線分の外
側の組成領域では、誘電損失が1%より大きくなりかつ
温度変化に対する静電容量値の変化率がJIS規格のB特
性を満足しないので好ましくない。In the composition region outside the line segment connecting the composition points D and A as in the sample number 3, the dielectric loss becomes larger than 1% and the rate of change of the capacitance value with respect to the temperature change is the B characteristic of JIS standard. It is not preferable because it is not satisfied.
さらに、試料番号12のように主成分となるべき組成の
うちPbの一部をSr,CaあるいはBaで置換しないときは、
誘電率が5,000より小さくなりかつ温度変化に対する静
電容量値の変化率がJIS規格のB特性を満足しないので
好ましくない。Further, when part of Pb in the composition to be the main component is not replaced with Sr, Ca, or Ba as in Sample No. 12,
It is not preferable because the permittivity becomes smaller than 5,000 and the rate of change of capacitance value with respect to temperature change does not satisfy the B characteristic of JIS standard.
また、試料番号15,18および21のように、主成分のう
ちPbの一部をSr,CaあるいはBaで10モル%より多く置換
すると、誘電率が5,000より小さくなりかつ焼成温度が
1,000℃より高くなって好ましくない。When a part of Pb in the main component is replaced with Sr, Ca or Ba in an amount of more than 10 mol% as in Sample Nos. 15, 18 and 21, the dielectric constant becomes less than 5,000 and the firing temperature increases.
The temperature is higher than 1,000 ℃, which is not preferable.
一方、試料番号22,23および27のように、副成分のMgO
およびZnOの1種以上の添加量が主成分に対して0.3重量
部より少ないときには、誘電損失が1%より大きくなり
かつ温度変化に対する静電容量値の変化率がJIS規格の
B特性を満足しないので好ましくない。On the other hand, as in sample numbers 22, 23, and 27, the secondary component MgO
When the addition amount of one or more of ZnO and ZnO is less than 0.3 parts by weight with respect to the main component, the dielectric loss becomes larger than 1% and the rate of change of capacitance value with temperature change does not satisfy the JIS standard B characteristics. It is not preferable.
また、試料番号26および30のように、MgOおよびZnOの
1種以上の添加量が4.0重量部より多いときには、誘電
率が5,000より小さくなって好ましくない。When the amount of one or more of MgO and ZnO added is more than 4.0 parts by weight as in Sample Nos. 26 and 30, the dielectric constant is less than 5,000, which is not preferable.
さらに、試料番号33のようにMnO2の添加量が主成分に
対して2.0重量部より多いときには、誘電損失が1%よ
り大きくなりかつ温度変化に対する静電容量値の変化率
がJIS規格のB特性を満足しないので好ましくない。Further, when the amount of MnO 2 added is more than 2.0 parts by weight with respect to the main component as in Sample No. 33, the dielectric loss becomes greater than 1% and the rate of change of the capacitance value with respect to temperature change is JIS standard B. It is not preferable because the characteristics are not satisfied.
それに対して、この発明の範囲内の試料では、焼成温
度が900〜1,000℃と低く誘電率が5,000以上と高く誘電
損失が1%以下と低くかつ温度変化に対する静電容量値
の変化率がJIS規格のB特性を満足する。On the other hand, in the samples within the scope of the present invention, the firing temperature was as low as 900 to 1,000 ° C., the dielectric constant was as high as 5,000 or more, the dielectric loss was as low as 1% or less, and the rate of change of the capacitance value with respect to temperature change was JIS. Satisfies the standard B characteristics.
図面はこの発明の主成分となるべき組成の配合比の範囲
を示す3角図である。The drawing is a triangular diagram showing the range of the compounding ratio of the composition to be the main component of the present invention.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01G 4/12 4/30 7924−5E C04B 35/00 J ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location H01G 4/12 4/30 7924-5E C04B 35/00 J
Claims (2)
ZrO3で表されるモル%X,YおよびZ(ただし、X+Y+
Z=100)が、次の各点A,B,CおよびD(モル%X,モル%
Y,モル%Z) A(52.0,44.0,4.0) B(47.0,38.0,15.0) C(42.0,41.0,17.0) D(46.0,48.0,6.0) を頂点とした多角形で囲まれる範囲にある組成のうちPb
の一部を、Ba,SrおよびCaの中から選択された少なくと
も1種以上で0.5〜10モル%置換した主成分に、 100重量部の前記主成分に対して、副成分としてMgOおよ
びZnOの一方を0.3〜4.0重量部含有した、誘電体磁器組
成物。1. A general formula XPb (Mg 1/2 W 1/2 ) O 3 --YPbTiO 3 --ZPb
Mol% X, Y and Z represented by ZrO 3 (provided that X + Y +
Z = 100) is the following points A, B, C and D (mol% X, mol%
Y, mol% Z) A (52.0,44.0,4.0) B (47.0,38.0,15.0) C (42.0,41.0,17.0) D (46.0,48.0,6.0) Within the range surrounded by polygons Pb out of composition
Of the main component obtained by substituting 0.5 to 10 mol% of at least one selected from Ba, Sr, and Ca for 100 parts by weight of the main component, and MgO and ZnO as auxiliary components. A dielectric ceramic composition containing 0.3 to 4.0 parts by weight of one of them.
て、MnをMnO2に換算して2.0重量部以下含有した、特許
請求の範囲第1項記載の誘電体磁器組成物。2. The dielectric ceramic composition according to claim 1, further comprising 2.0 parts by weight or less of Mn in terms of MnO 2 with respect to 100 parts by weight of the main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62054854A JPH0815009B2 (en) | 1987-03-09 | 1987-03-09 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62054854A JPH0815009B2 (en) | 1987-03-09 | 1987-03-09 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63221506A JPS63221506A (en) | 1988-09-14 |
| JPH0815009B2 true JPH0815009B2 (en) | 1996-02-14 |
Family
ID=12982178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62054854A Expired - Fee Related JPH0815009B2 (en) | 1987-03-09 | 1987-03-09 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0815009B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831517B2 (en) * | 1991-03-25 | 1996-03-27 | 日本碍子株式会社 | Electrostatic chuck |
| JP2692667B2 (en) * | 1995-02-20 | 1997-12-17 | 日本電気株式会社 | Dielectric porcelain composition |
-
1987
- 1987-03-09 JP JP62054854A patent/JPH0815009B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63221506A (en) | 1988-09-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |