JPH0815012B2 - High permittivity dielectric ceramic composition for microwave - Google Patents
High permittivity dielectric ceramic composition for microwaveInfo
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- JPH0815012B2 JPH0815012B2 JP61208921A JP20892186A JPH0815012B2 JP H0815012 B2 JPH0815012 B2 JP H0815012B2 JP 61208921 A JP61208921 A JP 61208921A JP 20892186 A JP20892186 A JP 20892186A JP H0815012 B2 JPH0815012 B2 JP H0815012B2
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、マイクロ波用高誘電率誘電体磁器組成物に
関するものであり、特にマイクロ波領域で使用されるフ
ィルタ等のデバイスの小型化に有用なマイクロ波用高誘
電率誘電体磁器組成物に関するものである。TECHNICAL FIELD The present invention relates to a high dielectric constant dielectric ceramic composition for microwaves, and is particularly useful for miniaturizing devices such as filters used in the microwave region. The present invention relates to a useful high dielectric constant dielectric ceramic composition for microwaves.
本発明は、BaO−Nd2O3−TiO2系誘電体磁器組成物にお
いて、BaOの一部をK2O及びBi2O3で置換し、Nd2O3の一部
をSm2O3で置換するとともに、必要に応じて副成分とし
て微量のCr2O3を添加することにより、 比誘電率の向上，マイクロ波領域での誘電損失の減
少，さらにそれらの温度特性の改善を図ろうとするもの
である。The present invention, BaO-Nd 2 O 3 in -TiO 2 based dielectric ceramic composition, a portion of the BaO is replaced by K 2 O and Bi 2 O 3, a part of Nd 2 O 3 Sm 2 O 3 In order to improve the relative permittivity, reduce the dielectric loss in the microwave region, and further improve their temperature characteristics, by substituting a small amount of Cr 2 O 3 as a sub-component, if necessary. To do.
従来より、誘電体はマイクロ波領域においても、例え
ばマイクロ波回路における基板，インピーダンス整合用
素子，誘電体共振器，誘電体アンテナ等に用いられてい
る。Conventionally, dielectrics have been used in the microwave region, for example, for substrates in microwave circuits, impedance matching elements, dielectric resonators, dielectric antennas, and the like.
近年、マイクロ波領域での回路技術の進歩や、応用範
囲及び使用周波数帯域の拡大等に伴って、特に比較的波
長の長いマイクロ波領域において、素子の小型化が要求
されている。In recent years, with the progress of circuit technology in the microwave region, the expansion of the application range and the used frequency band, and the like, miniaturization of elements is required especially in the microwave region having a relatively long wavelength.
すなわち、 （ｉ）小型化の目的に対しては誘電体の比誘電率εrが
高いことが必要である。例えば、フィルタ等の容積を従
来の誘電体共振器用の誘電体材料（比誘電率εr約30〜4
0）を用いた場合の略1/3以下にするためには、少なくと
も比誘電率εrが80以上であることが望ましい。That is, (i) For the purpose of miniaturization, it is necessary that the relative permittivity ε r of the dielectric is high. For example, the volume of a filter or the like is set to a dielectric material for a conventional dielectric resonator (relative permittivity ε r about 30 to 4
It is desirable that at least the relative permittivity ε r be 80 or more in order to make it approximately 1/3 or less of that in the case of using (0).
（ii）フィルタを構成したときの共振周波数の温度係数
τfは、少なくとも他の回路構成素子の温度係数と同等
かそれ以上であることが望ましい。例えば、マイクロ波
ICの基板として良く用いられる高純度アルミナ基板（比
誘電率の温度係数τε＝＋120ppm/℃）上に構成された
マイクロラインストリップフィルタの場合、共振周波数
の温度係数τfはおよそ−55ppm/℃である。従って、τf
≦±50ppm/℃であることが好ましい。また、τfの値を
制御し得ることも望まれる。(Ii) It is desirable that the temperature coefficient τ f of the resonance frequency when the filter is configured is at least equal to or higher than the temperature coefficient of other circuit constituent elements. For example, microwave
In the case of a microline strip filter constructed on a high-purity alumina substrate (temperature coefficient of relative permittivity τ ε = + 120ppm / ° C) that is often used as an IC substrate, the temperature coefficient τ f of resonance frequency is approximately -55ppm / ° C. Is. Therefore, τ f
It is preferably ≦ ± 50 ppm / ° C. It is also desirable to be able to control the value of τ f .
（iii）フィルタを構成する関係上、そのＱ値はできる
だけ大きいことが望ましいが、用いる誘電体の無負荷状
態でのQ,すなわちQoとしては、同軸共振器等を構成した
場合の電極の影響を考慮して、その導体損だけでほぼ決
まるような値，例えば３〜4MHzでQo≦2000であることが
望ましい。(Iii) It is desirable that the Q value of the filter is as large as possible in terms of the structure of the filter. However, the Q of the dielectric material used in the unloaded state, that is, Q o , is affected by the electrodes when a coaxial resonator or the like is formed. In consideration of the above, it is desirable that Q o ≦ 2000 at a value that is almost determined only by the conductor loss, for example, 3 to 4 MHz.
しかしながら、従来の誘電体材料では、上述の各要件
を同時に満足させることは困難であった。例えば、比誘
電率εrが比較的大きく温度特性が良好な誘電体材料と
しては、従来、温度補償コンデンサ用誘電体組成物が知
られているが、これら組成物はMHz程度の周波数領域で
は誘電体損失が少ないものの、マイクロ波領域では誘電
体損失が大きくなりすぎ、前述の要件を満足し得なかっ
た。具体的には、BaTiO3−Y2O3・TiO2−TiO2系組成物で
は、1MHzでのQoはおよそ1670であるが、3MHzでのQoは16
0程度と大幅に低下する。However, it has been difficult for conventional dielectric materials to simultaneously satisfy the above requirements. For example, as a dielectric material having a relatively large relative permittivity ε r and good temperature characteristics, a dielectric composition for a temperature compensation capacitor has been conventionally known, but these compositions have a dielectric constant in a frequency range of about MHz. Although the body loss was small, the dielectric loss was too large in the microwave region and the above requirements could not be satisfied. Specifically, in the BaTiO 3 --Y 2 O 3 TiO 2 --TiO 2 system composition, the Q o at 1 MHz is about 1670, but the Q o at 3 MHz is 16
It is significantly reduced to about 0.
そこで本発明は、前述の誘電特性に対する諸要求，す
なわち周波数３〜4GHzで比誘電率εr≧80,温度係数τf
≦±50ppm/℃，Qo≧2000、を満足し、かつτfを概ね０
とし得る新規なマイクロ波用高誘電率誘電体磁器組成物
を提供することを目的とする。Therefore, the present invention provides various requirements for the above-mentioned dielectric properties, namely, relative permittivity ε r ≧ 80 and temperature coefficient τ f at a frequency of 3 to 4 GHz.
≦ ± 50ppm / ℃, Q o ≧ 2000, and τ f is almost 0
An object of the present invention is to provide a novel high dielectric constant dielectric ceramic composition for microwaves.
本発明者らは、かかるマイクロ波用高誘電率誘電体磁
器組成物を開発せんものと長期に亘り鋭意研究の結果、
BaO−Nd2O3−TiO2系の誘電体磁器組成物のうち、BaO・N
d2O3・5TiO2付近の組成領域でBaOの一部をK2Ｏ及びBi2O
3で、またNd2O3の一部をSm2O3で置換した誘電体磁器組
成物及びこれに微量のCr2O3を添加した誘電体磁器組成
物がこの目的に適合し、上記要求を満足するものである
ことを見出し本発明を完成するに至ったものである。The present inventors have developed a high dielectric constant dielectric ceramic composition for microwaves as a result of extensive research over a long period of time,
Of BaO-Nd 2 O 3 -TiO 2 based dielectric ceramic composition, BaO · N
In the composition region near d 2 O 3 · 5TiO 2 , a part of BaO is converted into K 2 O and Bi 2 O.
3 and a dielectric ceramic composition in which a part of Nd 2 O 3 is replaced by Sm 2 O 3 and a dielectric ceramic composition in which a trace amount of Cr 2 O 3 is added to this purpose, and the above requirements are met. That is, the present invention has been completed and the present invention has been completed.
すなわち本発明は、BaO,Nd2O3，Sm2O3，TiO2，K2O,Bi
2O3で構成され、その組成を 〔xBaO・ｙ（K2O・Bi2O3）〕・ｚ〔（１−ｍ）Nd2O3・
ｍ・Sm2O3〕・（６−ｚ）TiO2 と表したとき、x,y,z,mの値が 0.88≦ｘ≦0.98 0.056≦ｙ≦0.11 0.95≦ｚ≦1.11 ０＜ｍ≦0.40 の条件を満足する範囲の組成物を主成分とし、副成分と
して0.5重量％以下のCr2O3を添加したことを特徴とする
ものである。That is, according to the present invention, BaO, Nd 2 O 3 , Sm 2 O 3 , TiO 2 , K 2 O, Bi
2 O 3 and its composition is [xBaO · y (K 2 O · Bi 2 O 3 )] · z [(1-m) Nd 2 O 3 ·.
when expressed as m · Sm 2 O 3] · (6-z) TiO 2 , x, y, z, the value of m is 0.88 ≦ x ≦ 0.98 0.056 ≦ y ≦ 0.11 0.95 ≦ z ≦ 1.11 0 <m ≦ 0.40 The composition is characterized in that the main component is a composition satisfying the condition (1) and 0.5% by weight or less of Cr 2 O 3 is added as an accessory component.
本発明のマイクロ波用高誘電率誘電体磁器組成物にお
いて、BaOのモル分率ｘを0.88〜0.98以下としたのは、
このモル分率ｘが0.88未満では誘電率εxrが80よりも小
さくなるか、あるいは温度係数τfが大きくなり過ぎる
こと、またモル分率ｘが0.98を越えると誘電損失が大き
くなり過ぎ不適当であることによる。In the high dielectric constant dielectric ceramic composition for microwaves of the present invention, the molar fraction x of BaO is 0.88 to 0.98 or less.
If the mole fraction x is less than 0.88, the dielectric constant ε x r becomes smaller than 80 or the temperature coefficient τ f becomes too large, and if the mole fraction x exceeds 0.98, the dielectric loss becomes too large and unsuitable. Depends on.
また、K2O・Bi2O3のモル分率ｙを0.056〜0.11とした
のは、このモル分率ｙが0.056未満では温度係数τfが大
きくなり過ぎ、また0.11を越えると誘電損失が大きくな
り過ぎるか、あるいは誘電率εrが80よりも小さくなる
等不適当なためである。例えば、 〔0.9BaO・ｙ（K2O・Bi2O3）〕・〔（１−ｍ）Nd2O3・m
Sm2O3〕・5TiO2 とし、ｍ＝0,m＝0.2,m＝0.4とした時、K2Ｏ・Bi2O3のモ
ル分率ｙを変えて4GHzにおけるQoの変化及び温度係数τ
fを調べたところ、第１図に示すように、0.056≦ｙ≦0.
11の範囲においてｍの値に関係なくQoはその大きさが20
00以上の極大値を示すことがわかった。同時に、この範
囲では第２図に示すように温度係数τfは極めて小さな
値を示した。Further, the molar fraction y of K 2 O · Bi 2 O 3 is set to 0.056 to 0.11 because the temperature coefficient τ f becomes too large when the molar fraction y is less than 0.056, and the dielectric loss is more than 0.11. This is because it is unsuitable because it becomes too large or the dielectric constant ε r becomes smaller than 80. For example, [0.9BaO ・ y (K 2 O ・ Bi 2 O 3 )] ・ [(1-m) Nd 2 O 3・ m
Sm 2 O 3 ] ・ 5TiO 2 and m = 0, m = 0.2, m = 0.4, changing the mole fraction y of K 2 O ・ Bi 2 O 3 and changing the Q o and temperature coefficient at 4 GHz. τ
When f was examined, as shown in FIG. 1, 0.056 ≦ y ≦ 0.
In the range of 11, Q o has a magnitude of 20 regardless of the value of m.
It was found to show a maximum value of 00 or more. At the same time, in this range, the temperature coefficient τ f showed an extremely small value as shown in FIG.
次に、（１−ｍ）Nd2O3・mSm2O3のモル分率ｚを0.95/
1.11としたのは、このモル分率ｚが0.95未満では誘電損
失が大きくなり過ぎるか、あるいは温度係数τfが大き
くなり過ぎ、またモル分率ｚが1.11を越えると誘電損失
が大きくなり過ぎるか、あるいは誘電率εrが80よりも
小さくなるので不適当なためである。例えば、 〔0.9BaO・0.1（K2O・Bi2O3）〕・ｚ〔（１−ｍ）Nd2O3
・mSm2O3〕・（６−ｚ）TiO2 とし、ｍ＝0,m＝0.2,m＝0.4とした時、Nd2O3のモル分率
ｚを変えて4GHzにおけるQoの変化及び温度係数τfを調
べたところ、第３図に示すように、0.95≦ｚ≦1.11の範
囲においてｍの値に関係なくQoはｚ＝1.0付近でその大
きさが2000以上の極大値を示すことがわかった。同時
に、この範囲では第４図に示すように温度係数τfは極
めて小さな値を示した。Next, the molar fraction z of (1-m) Nd 2 O 3 · mSm 2 O 3 is 0.95 /
1.11 is because if the mole fraction z is less than 0.95, the dielectric loss becomes too large, or if the temperature coefficient τ f becomes too large, and if the mole fraction z exceeds 1.11 the dielectric loss becomes too large. , Or because the permittivity ε r is smaller than 80, it is unsuitable. For example, [0.9BaO ・ 0.1 (K 2 O ・ Bi 2 O 3 )] ・ z [(1-m) Nd 2 O 3
· MSM 2 O 3] · a (6-z) TiO 2, m = 0, m = 0.2, when the m = 0.4, the change in Q o and the 4GHz by changing the mole fraction z of Nd 2 O 3 When the temperature coefficient τ f was examined, as shown in FIG. 3, in the range of 0.95 ≦ z ≦ 1.11, Q o showed a maximum value of 2000 or more near z = 1.0 regardless of the value of m. I understand. At the same time, in this range, the temperature coefficient τ f showed an extremely small value as shown in FIG.
なお、第１図ないし第４図からは、さらにｍの値にか
かわらずQoは略同等の値を示すこと、ｍの値が増加する
のに伴って温度係数τfは次第に小さくなることから、N
d2O3の一部をSm2O3で置換することにより誘電損失を増
加することなしに温度係数τfをより小さな値にできる
ことがわかった。It should be noted that, from FIGS. 1 to 4, since Q o shows substantially the same value regardless of the value of m, the temperature coefficient τ f gradually decreases as the value of m increases. , N
It was found that the temperature coefficient τ f can be made smaller without increasing the dielectric loss by substituting a part of d 2 O 3 with Sm 2 O 3 .
そこで、（１−ｍ）Nd2O3・ｍ・Sm2O3の係数ｍの値に
ついて検討した。Therefore, the value of the coefficient m of (1-m) Nd 2 O 3 · m · Sm 2 O 3 was examined.
例えば、 〔0.9BaO・ｙ（K2O・Bi2O3）〕・〔（１−ｍ）Nd2O3・m
Sm2O3〕・5TiO2 とし、ｙ＝0.075,y＝0.10とした時、Sm2O3のモル分率ｍ
を変えて4GHzにおける比誘電率εrの変化及び温度係数
τfを調べたところ、第５図に示すように、ｍの増加に
ともなってεrは減少していくことがわかった。この結
果よりｍ≦0.40の範囲とすればよいことがわかる。同時
に、この範囲では第６図に示すように温度係数τfも極
めて小さな値を示した。この範囲をはずれると比誘電率
εrがより小さな値となってしまうことがわかる。For example, [0.9BaO ・ y (K 2 O ・ Bi 2 O 3 )] ・ [(1-m) Nd 2 O 3・ m
Sm 2 O 3 ] · 5TiO 2 and y = 0.75, y = 0.10, the mole fraction m of Sm 2 O 3
When changing the relative permittivity ε r and the temperature coefficient τ f at 4 GHz under various conditions, it was found that ε r decreased as m increased, as shown in FIG. From this result, it is understood that the range may be set to m ≦ 0.40. At the same time, in this range, the temperature coefficient τ f also showed an extremely small value as shown in FIG. It is understood that if the value is out of this range, the relative permittivity ε r will be a smaller value.
すなわち、（１−ｍ）Nd2O3・ｍ・Sm2O3の係数ｍを０
＜ｍ≦0.40としたのは、係数ｍが０では組成系の意義が
なくなることと0.40を越えると誘電率εrが80よりも小
さくなるので不適当なためである。That is, the coefficient m of (1-m) Nd 2 O 3 · m · Sm 2 O 3 is 0.
The reason why <m ≦ 0.40 is set is that the coefficient m is 0, meaning that the composition system has no significance, and that if 0.40 is exceeded, the dielectric constant ε r becomes smaller than 80, which is unsuitable.
一方、Cr2O3の添加量を0.5重量％以下としたのは、0.
5重量％を越えると誘電損失が大きくなり過ぎるためで
ある。例えば、 〔0.9BaO・0.1（K2O・Bi2O3）〕・〔（１−ｍ）Nd2O3・
mSm2O3〕・5TiO2 なる誘電体組成物においてｍ＝0,m＝0.4の時、Cr2O3を
0.2重量％添加した場合と未添加の場合のそれぞれにつ
いて、焼成温度と得られる焼結体の密度ρの関係を調べ
たところ、第７図に示すように、Cr2O3の添加により焼
成温度を低下させることができることがわかった。な
お、第７図において、Ａはｍ＝0,Cr2O3未添加、Ｂはｍ
＝0.4,Cr2O3未添加、Ｃはｍ＝0,Cr2O3を0.2重量％添
加、Ｄはｍ＝0.4,Cr2O3を0.2重量％添加をそれぞれ表し
ている。On the other hand, the amount of Cr 2 O 3 added was 0.5% by weight or less because
This is because if it exceeds 5% by weight, the dielectric loss becomes too large. For example, [0.9BaO ・ 0.1 (K 2 O ・ Bi 2 O 3 )] ・ [(1-m) Nd 2 O 3・
mSm 2 O 3 ] ・ 5TiO 2 in the dielectric composition, when m = 0, m = 0.4, Cr 2 O 3
For each case where a non-additive was added 0.2 wt%, was examined the relationship between the density ρ of the sintered body obtained and the firing temperature, as shown in FIG. 7, the firing temperature by the addition of Cr 2 O 3 It has been found that can be reduced. In FIG. 7, A is m = 0, Cr 2 O 3 is not added, and B is m.
= 0.4, Cr 2 O 3 is not added, C is m = 0, Cr 2 O 3 is added by 0.2% by weight, and D is m = 0.4, Cr 2 O 3 is added by 0.2% by weight.
但し、このCr2O3の添加は、誘電損失の増加（Qoの低
下）や温度係数τfの増加をもたらすので、その添加量
は0.5重量％までに抑えることが好ましい。例えば、 〔0.9BaO・0.1（K2O・Bi2O3）〕・〔（１−ｍ）Nd2O3〕
・mSm2O3・5TiO2 なる組成物にCr2O3を添加し、その添加量を徐々に増加
していくと、第８図に示すように、誘電損失がCr2O3添
加量にともない増加（Qoが徐々に低下）していくことが
わかった。同時に、この範囲では第９図に示すように、
温度係数τfもCr2O3添加量にともない増加していくこと
がわかった。Qoの低下傾向及び温度係数τfの増加傾向
は、Cr2O3の添加量が0.5重量％を越えると特に顕著にな
ることがわかる。However, addition of Cr 2 O 3 causes an increase in dielectric loss (decrease in Q o ) and an increase in temperature coefficient τ f , so the addition amount thereof is preferably suppressed to 0.5% by weight. For example, [0.9BaO ・ 0.1 (K 2 O ・ Bi 2 O 3 )] ・ [(1-m) Nd 2 O 3 ]
・ When Cr 2 O 3 is added to the composition of mSm 2 O 3 .5TiO 2 and the amount of addition is gradually increased, the dielectric loss becomes equal to that of Cr 2 O 3 as shown in FIG. It was found that the rate of increase (Q o gradually decreased) was gradually increased. At the same time, in this range, as shown in FIG.
It was found that the temperature coefficient τ f also increased with the amount of Cr 2 O 3 added. It can be seen that the decreasing tendency of Q o and the increasing tendency of the temperature coefficient τ f become particularly remarkable when the added amount of Cr 2 O 3 exceeds 0.5% by weight.
従って、本発明の誘電体磁器組成物は、例えばBaC
O3，Nd2O3，Sm2O3，TiO2，K2CO3，Bi2O3及びCr2O3の各
原料粉末を、前述の組成範囲で混合し、焼成することに
よって作製することができる。この場合の焼成温度は13
00〜1350℃の範囲にあることが好ましい。Therefore, the dielectric porcelain composition of the present invention is, for example, BaC
Produced by mixing the raw material powders of O 3 , Nd 2 O 3 , Sm 2 O 3 , TiO 2 , K 2 CO 3 , Bi 2 O 3 and Cr 2 O 3 in the above composition range and firing. be able to. The firing temperature in this case is 13
It is preferably in the range of 00 to 1350 ° C.
BaO−Nd2O3−TiO2系の誘電体磁器組成物のうち、BaO
・Nd2O3・5TiO2付近の組成領域でBaOの一部をK2Ｏ及びB
i2O3で、またNd2O3の一部をSm2O3で置換することによ
り、温度係数τfが低下し、Qo≧2000が達成される。Of BaO-Nd 2 O 3 -TiO 2 based dielectric ceramic composition, BaO
· Nd 2 O 3 · 5TiO 2 a portion of BaO in the composition region in the vicinity of K 2 O and B
By substituting i 2 O 3 and part of Nd 2 O 3 with Sm 2 O 3 , the temperature coefficient τ f is reduced and Q o ≧ 2000 is achieved.
また、Cr2O3の添加により、焼成温度が低下し、焼結
性が改善される。Also, the addition of Cr 2 O 3 lowers the firing temperature and improves the sinterability.
以下、本発明の具体的な実施例について説明するが、
本発明がこれら実施例に限定されるものではないことは
いうまでもない。Hereinafter, specific examples of the present invention will be described.
Needless to say, the present invention is not limited to these examples.
先ず、純度99.9％以上のBaCO3，Nd2O3，Sm2O3，Ti
O2，K2CO3，Bi2O3及びCr2O3の各原料粉末を用意した。First, BaCO 3 , Nd 2 O 3 , Sm 2 O 3 , and Ti with a purity of 99.9% or more.
Raw material powders of O 2 , K 2 CO 3 , Bi 2 O 3 and Cr 2 O 3 were prepared.
次に、これら各原料粉末をそれぞれ所望の組成となる
ように秤量し、エタノールを混合溶媒としてボールミル
で混合処理した後、エタノールを蒸発・除去した。Next, each of these raw material powders was weighed so as to have a desired composition, mixed with a ball mill using ethanol as a mixed solvent, and then ethanol was evaporated and removed.
続いて、1000kg/cm2の圧力で加圧成形し、成形体を10
00〜1100℃で３時間，空気中で仮焼した。Next, pressure molding is performed at a pressure of 1000 kg / cm 2 , and the molded body is
It was calcined in the air at 00 to 1100 ° C for 3 hours.
これを乳鉢等で粉砕し、再びエタノールを混合溶媒と
してボールミルにて混合処理し、エタノールを蒸発・除
去した。This was crushed in a mortar and the like, and again mixed with a ball mill using ethanol as a mixed solvent to evaporate and remove ethanol.
その後、1500kg/cm2の圧力で加圧成形し、成形体を13
00〜1350℃で３時間，空気中で焼成した。After that, pressure molding is performed at a pressure of 1500 kg / cm 2 , and the molded body is
Baking was performed in the air at 00 to 1350 ° C. for 3 hours.
上述の方法に従い、原料粉末の組成を変えて誘電体磁
器組成物を作製し、実施例１〜実施例10とした。同様
に、本発明の組成範囲を外れる組成となるように原料粉
末を秤量し、誘電体磁器組成物を作製して比較例１〜比
較例８とした。In accordance with the above-mentioned method, the composition of the raw material powder was changed to prepare dielectric ceramic compositions, and Examples 1 to 10 were made. Similarly, the raw material powders were weighed so that the composition was out of the composition range of the present invention, and dielectric ceramic compositions were produced to give Comparative Examples 1 to 8.
このようにして得られた誘電体磁器組成物を加工して
円柱状誘電体共振器とし、その共振特性と温度変化，共
振器の寸法とから、比誘電率εr，温度係数τf，Qoとを
求めた。なお、測定周波数はおよそ4GHZであった。The thus-obtained dielectric ceramic composition was processed into a cylindrical dielectric resonator, and the relative dielectric constant ε r , temperature coefficient τ f , Q o and asked. The measurement frequency was about 4GHZ.
結果を第１表及び第２表に示す。 The results are shown in Tables 1 and 2.
これら第１表及び第２表より、実施例１〜12において
は、各構成成分のモル分率x,y,z,m及びCr2O3添加量のい
ずれも前述した所定の範囲内にあり、必要な誘電特性を
満足しているのに対して、比較例１〜比較例８ではこれ
らのうちいずれかが所定の範囲外にあり、そのため必要
な誘電特性を満足していないことがわかる。 From these Tables 1 and 2, in Examples 1 to 12, the molar fractions x, y, z, m of the respective constituents and the Cr 2 O 3 addition amounts were all within the predetermined ranges described above. It is understood that, while the required dielectric properties are satisfied, in Comparative Examples 1 to 8, any one of these is out of the predetermined range, and therefore the required dielectric properties are not satisfied.
以上の説明からも明らかなように、本発明によるマイ
クロ波用高誘電率誘電体磁器組成物にあっては、4GHz程
度の周波数における比誘電率εr≧80,温度係数τf≦±5
0ppm/℃，Qo≧2000の各要求を満足させることができ
る。As is clear from the above description, the high dielectric constant dielectric ceramic composition for microwaves according to the present invention has a relative permittivity ε r ≧ 80 and a temperature coefficient τ f ≦ ± 5 at a frequency of about 4 GHz.
The requirements of 0ppm / ℃ and Q o ≧ 2000 can be satisfied.
したがって、本発明の採用により、従来の誘電体共振
器用材料を用いた場合に比べて、マイクロ波フィルター
の大きさを他の特性を損なうことなく容量でおよそ1/3
以下に小型化することができ、さらに共振周波数の温度
係数をおよそ０とすることも容易になる。Therefore, by adopting the present invention, the size of the microwave filter can be reduced to about 1/3 of the capacitance without impairing other characteristics, as compared with the case of using the conventional dielectric resonator material.
The size can be reduced to the following, and it becomes easy to set the temperature coefficient of the resonance frequency to about 0.
また、本発明のマイクロ波用高誘電率誘電体磁器組成
物は、マイクロ波領域のコンデンサ等の素子用誘電体と
しても好適なものである。The high dielectric constant dielectric ceramic composition for microwaves of the present invention is also suitable as a dielectric for devices such as capacitors in the microwave region.
第１図K2O・Bi2O3のモル分率とQoとの関係を示す特性
図、第２図はK2O・Bi2O3のモル分率と温度係数τfとの
関係を示す特性図、第３図はNd2O3のモル分率とQoとの
関係を示す特性図、第４図はNd2O3のモル分率と温度係
数τfとの関係を示す特性図、第５図はSm2O3のモル分率
とεrとの関係を示す特性図、第６図はSm2O3のモル分率
と温度係数τfとの関係を示す特性図、第７図はCr2O3を
添加した場合と添加しない場合の焼成温度と得られる誘
電体磁器組成物の密度ρの関係を示す特性図、第８図は
Cr2O3の添加量とQoとの関係を示す特性図、第９図はCr2
O3の添加量と温度係数τfとの関係を示す特性図であ
る。Fig. 1 is a characteristic diagram showing the relationship between the mole fraction of K 2 O ・ Bi 2 O 3 and Q o, and Fig. 2 is the relation between the mole fraction of K 2 O ・ Bi 2 O 3 and the temperature coefficient τ f. FIG. 3 shows the relationship between the molar fraction of Nd 2 O 3 and Q o, and FIG. 4 shows the relationship between the molar fraction of Nd 2 O 3 and temperature coefficient τ f. Characteristic diagram, FIG. 5 is a characteristic diagram showing the relationship between the mole fraction of Sm 2 O 3 and ε r, and FIG. 6 is a characteristic diagram showing the relationship between the mole fraction of Sm 2 O 3 and the temperature coefficient τ f . , FIG. 7 is a characteristic diagram showing the relationship between the firing temperature with and without addition of Cr 2 O 3 and the density ρ of the obtained dielectric ceramic composition, and FIG. 8 is
Amount and characteristics diagram showing the relationship between Q o of Cr 2 O 3, FIG. 9 is Cr 2
FIG. 6 is a characteristic diagram showing the relationship between the amount of O 3 added and the temperature coefficient τ f .
Claims (1)
成され、その組成を 〔xBaO・ｙ（K2O・Bi2O3）〕・ｚ〔（１−ｍ）Nd2O3・
ｍ・Sm2O3〕・（６−ｚ）TiO2 と表したとき、x,y,z,mの値が 0.88≦ｘ≦0.98 0.056≦ｙ≦0.11 0.95≦ｚ≦1.11 ０＜ｍ≦0.40 の条件を満足する範囲の組成物を主成分とし、副成分と
して0.5重量％以下のCr2O3を添加したことを特徴とする
マイクロ波用高誘電率誘電体磁器組成物。1. A composition comprising BaO, Nd 2 O 3 , Sm 2 O 3 , TiO 2 , K 2 O and Bi 2 O 3 , the composition of which is [xBaO · y (K 2 O · Bi 2 O 3 )].・ Z [(1-m) Nd 2 O 3・
when expressed as m · Sm 2 O 3] · (6-z) TiO 2 , x, y, z, the value of m is 0.88 ≦ x ≦ 0.98 0.056 ≦ y ≦ 0.11 0.95 ≦ z ≦ 1.11 0 <m ≦ 0.40 2. A high dielectric constant dielectric ceramic composition for microwaves, characterized in that the main component is a composition satisfying the condition (1), and 0.5% by weight or less of Cr 2 O 3 is added as a subcomponent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61208921A JPH0815012B2 (en) | 1986-09-05 | 1986-09-05 | High permittivity dielectric ceramic composition for microwave |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61208921A JPH0815012B2 (en) | 1986-09-05 | 1986-09-05 | High permittivity dielectric ceramic composition for microwave |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6364212A JPS6364212A (en) | 1988-03-22 |
| JPH0815012B2 true JPH0815012B2 (en) | 1996-02-14 |
Family
ID=16564330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61208921A Expired - Fee Related JPH0815012B2 (en) | 1986-09-05 | 1986-09-05 | High permittivity dielectric ceramic composition for microwave |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0815012B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000007429A (en) * | 1998-06-16 | 2000-01-11 | Ngk Spark Plug Co Ltd | Dielectric material and method of manufacturing the same |
| JP3615960B2 (en) | 1999-04-14 | 2005-02-02 | ペンタックス株式会社 | Endoscopic biopsy forceps with needle |
-
1986
- 1986-09-05 JP JP61208921A patent/JPH0815012B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6364212A (en) | 1988-03-22 |
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