JPH0815173B2 - Semiconductor integrated circuit operation evaluation method - Google Patents
Semiconductor integrated circuit operation evaluation methodInfo
- Publication number
- JPH0815173B2 JPH0815173B2 JP61290262A JP29026286A JPH0815173B2 JP H0815173 B2 JPH0815173 B2 JP H0815173B2 JP 61290262 A JP61290262 A JP 61290262A JP 29026286 A JP29026286 A JP 29026286A JP H0815173 B2 JPH0815173 B2 JP H0815173B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- focused ion
- integrated circuit
- semiconductor integrated
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 238000011156 evaluation Methods 0.000 title description 3
- 239000002184 metal Substances 0.000 claims description 15
- 238000010884 ion-beam technique Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 7
- 230000005685 electric field effect Effects 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims 1
- 239000010408 film Substances 0.000 description 8
- 239000000523 sample Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、荷電粒子ビームを用いて高集積のLSIや超
高速のLSIのチップ内配線の信号電圧を測定しIC動作評
価を行なう装置に関する。The present invention relates to an apparatus for measuring a signal voltage of on-chip wiring of a highly integrated LSI or an ultra-high speed LSI using a charged particle beam to evaluate an IC operation. .
ICの大規模化・複雑化に伴ってテスタビリティが低下
してきており、動作評価の手段としてEBテスタが実用化
されているが、絶縁膜下の配線のテスティングする為に
は、配線上の絶縁膜に穴をあけて配線をむき出しにする
必要がある。そこで本発明では、集束イオンビームエッ
チングにより細孔を形成し、その周辺領域に集束イオン
ビームCVD法によって金属電極を形成させ、その電極に
おいて電位波形測定を行なう方法。Testability is decreasing with the increase in size and complexity of ICs, and the EB tester has been put to practical use as a means of evaluating operation.However, in order to test wiring under the insulating film, It is necessary to make a hole in the insulating film to expose the wiring. Therefore, in the present invention, a method is used in which a fine hole is formed by focused ion beam etching, a metal electrode is formed in the peripheral region by the focused ion beam CVD method, and a potential waveform is measured at the electrode.
従来は目的部位絶縁膜をエッチングし、光学顕微鏡に
より配線を確認し、これに金属の尖った針を接触させて
オシロスコープで測定する金属探針法と、走査電子顕微
鏡（SEM）と同様に走査により配線を確認し、目的部位
に電子ビームを照射し、発生する２次電子を検出するこ
とにより、その箇所の電圧波形を測定するEBテスタがあ
る。Conventionally, by etching the insulating film at the target area, checking the wiring with an optical microscope, and then contacting it with a sharp metal needle to measure with an oscilloscope, the metal probe method and the scanning electron microscope (SEM) There is an EB tester that checks the wiring, irradiates the target site with an electron beam, and detects the secondary electrons that are generated to measure the voltage waveform at that site.
金属探針法は、LSIが微細化・高集積化されると、金
属針の先端が大きすぎて接触が困難であった。又、EBテ
スタは非接触で微小部分のプロービングができるが、被
測定電極の寸法が小さくなるほど近隣の配線や形状によ
る局所電界効果といわれる誤差要因が増すという問題が
あった。局所電界効果は１ミクロン幅の電極上の５ボル
トを測定するとマイナス1.5ボルト程度の誤差を生じさ
せるものである。In the metal probe method, when the LSI was miniaturized and highly integrated, the tip of the metal needle was too large and it was difficult to make contact. In addition, although the EB tester can perform probing of a minute portion without contact, there is a problem that as the size of the electrode under measurement becomes smaller, an error factor called local electric field effect due to neighboring wiring and shape increases. The local field effect causes an error of about -1.5 volts when measuring 5 volts on a 1 micron wide electrode.
更に、電極上に絶縁膜が形成されている場合、チャー
ジアップ効果を避けるため、何らかの手段で剥ぎ取らな
くてはならず、その為、一連の工程に時間を要した。Further, when the insulating film is formed on the electrode, it has to be peeled off by some means in order to avoid the charge-up effect, so that a series of steps requires time.
本発明は前述の問題点を解説するための方法であり、
以下にその手法を示す。The present invention is a method for explaining the above-mentioned problems,
The method is shown below.
イオンビームを走査しながら照射して試料表面の微細
加工を行なう集束イオンビーム装置により、目的配線上
の保護膜を集束イオンビーム，エッチングによって穴あ
けし、その細孔部周辺領域に集束イオンビーム−CVDに
よって金属電極を新規に形成させ、その拡大された電極
に荷電粒子ビームを照射し、放出される２次電子をエネ
ルギーアナライザーを備えた２次電子検出器によって測
定することにより、局所電界効果の影響を受けずに正確
な電位波形を得ることができる。With a focused ion beam device that irradiates while scanning the ion beam to finely process the sample surface, the protective film on the target wiring is perforated by focused ion beam and etching, and focused ion beam-CVD in the area around the pores. By forming a new metal electrode by irradiating the expanded electrode with a charged particle beam and measuring the emitted secondary electrons with a secondary electron detector equipped with an energy analyzer, the influence of the local electric field effect is obtained. An accurate potential waveform can be obtained without being affected.
本発明は、加工箇所の不良解析のための補助手段とし
てデバイス加工用の集束イオンビームを利用する。The present invention uses a focused ion beam for device processing as an auxiliary means for defect analysis of a processed portion.
ICが微細化・高集積化が進み、金属配線上に絶縁膜が
あったとしても、集束イオンビームによって目的部位上
の絶縁膜に細孔を形成させ、その周辺領域に集束イオン
ビーム−CVD法により金属電極を形成させることによっ
て、チャージアップ効果及び局所電界効果の影響を受け
ずに、良好な電圧測定精度で不良解析を実行できる。Even if there is an insulating film on the metal wiring due to the miniaturization and high integration of ICs, a focused ion beam is used to form pores in the insulating film on the target site, and the focused ion beam-CVD method is applied to the surrounding area. By forming the metal electrode by using, the failure analysis can be performed with good voltage measurement accuracy without being affected by the charge-up effect and the local electric field effect.
以下図面に従って本発明の実施例を詳細に説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
図−１は本発明の概念説明図であり、図−２は本発明
を実施する際の装置概略構成図である。FIG. 1 is a conceptual explanatory view of the present invention, and FIG. 2 is a schematic configuration diagram of an apparatus for carrying out the present invention.
図−１（ａ）において、配線上の保護膜に集束イオン
ビーム照射によりエッチング穴あけし、次に、ガス銃に
よってヘキサカルボニル金属蒸気を試料表面に吹きつけ
ながら集束イオンビームを走査して、（ｂ）のように金
属がデポジションされ、電極を形成させる。最終的に該
金属電極において、集束イオンビームを照射し、その際
に放出される２次電子を検出し電位波形測定することに
よって動作評価を行なう（ｃ）。In FIG. 1 (a), the protective film on the wiring is etched by irradiation with a focused ion beam, and then the focused ion beam is scanned while a hexagonal metal vapor is blown onto the sample surface by a gas gun. ), The metal is deposited to form the electrode. Finally, the operation is evaluated by irradiating the metal electrode with a focused ion beam, detecting the secondary electrons emitted at that time, and measuring the potential waveform (c).
本発明により、半導体デバイスの金属配線変更と荷電
粒子ビームテスタによるIC動作評価が一連の工程で、局
所電界効果等の影響を受けずに、正確，迅速に実行する
ことができる。According to the present invention, the change of the metal wiring of the semiconductor device and the evaluation of the IC operation by the charged particle beam tester can be accurately and quickly executed in a series of steps without being affected by the local electric field effect and the like.
従って、本発明はIC開発期間の短縮に大きな威力を発
揮する。Therefore, the present invention exerts great power in shortening the IC development period.
第１図（ａ）〜（ｃ）は、IC動作評価補助手段説明図、
第２図は、装置概略構成図である。 １……イオン源 ２……コンデンサレンズ ３……上部偏向板 ４……絞り ５……非点補正レンズ ６……対物レンズ ７……走査電極 ８……ガス銃 ９……試料 10……２次電子検出器1 (a) to 1 (c) are explanatory views of IC operation evaluation assisting means,
FIG. 2 is a schematic configuration diagram of the apparatus. 1 ... Ion source 2 ... Condenser lens 3 ... Upper deflection plate 4 ... Aperture 5 ... Astigmatism correction lens 6 ... Objective lens 7 ... Scan electrode 8 ... Gas gun 9 ... Sample 10 ... 2 Secondary electron detector
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭59−168652（ＪＰ，Ａ) 特開 昭60−28151（ＪＰ，Ａ) 特開 昭61−183922（ＪＰ，Ａ) 特開 昭59−113635（ＪＰ，Ａ) 特公 昭57−34664（ＪＰ，Ｂ２) ＶＬＳＩの薄膜技術（Ｓ61．９．30丸善 発行）Ｐ．144〜145，154〜157 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-59-168652 (JP, A) JP-A-60-28151 (JP, A) JP-A-61-183922 (JP, A) JP-A-59- 113635 (JP, A) JP-B 57-34664 (JP, B2) VLSI thin film technology (S61.9.30 Maruzen issue) 144-145, 154-157
Claims (1)
オンビーム照射により細孔を明けて、前記配線を露出
し、 次に、ガス銃によりカルボニル金属蒸気を吹付けながら
前記集束イオンビームをその細孔を含む周辺領域に照射
し、前記細孔を介して保護膜上に局所電界効果の影響を
受けない大きさの金属電極を形成し、 更に次に、前記金属電極に前記集束イオンビームを照射
してその照射により放出される二次電子を二次電子検出
器により検出し二次電子の電圧波形を測定することを特
徴とする半導体集積回路の動作評価方法。1. A protective film on a wiring of a semiconductor integrated circuit is exposed by exposing the wiring by irradiating a focused ion beam with a focused ion beam, and then the carbonyl metal vapor is sprayed by a gas gun to apply the focused ion beam. Irradiating the peripheral area including the pores, a metal electrode having a size not affected by the local electric field effect is formed on the protective film through the pores, and then the focused ion beam is applied to the metal electrode. A method for evaluating the operation of a semiconductor integrated circuit, which comprises irradiating a semiconductor device with a laser beam, detecting secondary electrons emitted by the irradiation with a secondary electron detector, and measuring a voltage waveform of the secondary electron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61290262A JPH0815173B2 (en) | 1986-12-05 | 1986-12-05 | Semiconductor integrated circuit operation evaluation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61290262A JPH0815173B2 (en) | 1986-12-05 | 1986-12-05 | Semiconductor integrated circuit operation evaluation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63142825A JPS63142825A (en) | 1988-06-15 |
| JPH0815173B2 true JPH0815173B2 (en) | 1996-02-14 |
Family
ID=17753858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61290262A Expired - Lifetime JPH0815173B2 (en) | 1986-12-05 | 1986-12-05 | Semiconductor integrated circuit operation evaluation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0815173B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2971529B2 (en) * | 1990-06-25 | 1999-11-08 | 松下電子工業株式会社 | Failure analysis method for integrated circuits |
| JP2643583B2 (en) * | 1990-10-25 | 1997-08-20 | 日本電気株式会社 | Failure analysis method for semiconductor device |
| US5140164A (en) * | 1991-01-14 | 1992-08-18 | Schlumberger Technologies, Inc. | Ic modification with focused ion beam system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63122136A (en) * | 1986-11-12 | 1988-05-26 | Hitachi Ltd | Integrated circuit |
-
1986
- 1986-12-05 JP JP61290262A patent/JPH0815173B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| ＶＬＳＩの薄膜技術（Ｓ６１．９．３０丸善発行）Ｐ．１４４〜１４５，１５４〜１５７ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63142825A (en) | 1988-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |