JPH0815192B2 - Semiconductor device - Google Patents

Description

Description: TECHNICAL FIELD OF THE INVENTION The present invention is applied to a semiconductor device, such as a DIP type IC, having an outer lead protruding from an envelope and having a bent portion.

[Technical background of the invention]

Conventionally, in one example of a semiconductor device, as in a DIP type IC, an outer lead protrudes from an envelope, and this has a bent portion in the middle. An IC having such a structure is constructed as described below by the lead frame 100 shown in FIG. That is, the lead frame 100 in the figure has frame portions 101, 101 on both sides and the lead-shaped portion 1 between them.
02a, 102a bridge supported by the chip bed 102, and the inner lead portion 10 extending radially outwardly from the chip bed 102 with a space therebetween.
3a, 103a ... And these inner lead parts are composed of outer lead parts 103b, 103b ... Lead parts 103, 103 ... That extend in two rows outside the envelope. Then, a semiconductor chip is mounted on the chip bed 102, and its electrode group has a thin metal wire (both semiconductor chip and thin metal wire are not shown).
Are connected to the corresponding inner lead ends, and a sealing resin is applied to a region 104 indicated by a chain double-dashed line in the figure to form an envelope 105 as shown in FIG. Also, the third
As shown in the figure, the outer lead portions 103b, 103b ... Projecting from the envelope 105 are cut from the lead frame and bent. This bending process not only applies a large bending stress to the outer lead, but also increases the bending gap at the interface between the outer lead protruding envelope and the sealing resin, and causes damage to the sealing resin such as cracks and chips. I will let you do it.

In order to reduce the stress of the bending process, conventionally, as shown in FIG. 3a, the through holes 113 are formed in the outer lead portions 103b, 103b.
, b, 113b ... Or, as shown in FIG. 3b, means such as providing notches 123b, 123b ... on the side surfaces of the outer lead portions 103b, 103b. Further, as shown in FIG. 4, means such as chemical etching or punching with a press is applied to the inner main surface of the bent portion to reduce the plate thickness t of the bent portion from the plate thickness T of the lead portion. Was being offered.

[Problems of background technology]

According to the above-mentioned conventional technique, adverse effects on the sealing resin and the curved interface between the sealing resin and the outer lead when bending the outer lead are alleviated, but there is a problem in the strength of the outer lead after processing. In other words, transportation between product processes, handling processes,
There is a serious problem that the lead is apt to be deformed after use in the inspection process and further by the user of the product, and the product value is remarkably reduced.

[Object of the Invention]

The present invention provides a semiconductor device in which the structure of the bent portion of the outer lead is improved in view of the above conventional problems.

[Outline of Invention]

In the semiconductor device of the present invention, the outer lead is protruded from the envelope and is bent on the main surface of the bent portion of the outer lead in the semiconductor device. On the other hand, a plurality of grooves in the longitudinal direction thereof are provided only on the main surface of the bent portion. Thereby, the bending stress at the time of bending the outer lead can be reduced, the problem relating to the lead sealing of the envelope can be prevented, and the deformation of the outer lead can be prevented.

Example of Invention

An embodiment of the present invention will be described below with reference to FIG. In the description, parts that are the same as those in the related art are denoted by the same reference numerals as those in the related art and will not be described.

FIG. 1a is a side view of the bent portion of the outer lead of the DIP type IC, and the outer lead 11 protruding from the side surface of the resin-sealed envelope 105 is, as an example, the inner main surface of the bent portion. The groove 12 is provided in the direction.
The groove 12 can be easily achieved by chemical etching at the time of manufacturing the lead frame or punching in a pressing process. The shapes of the grooves are triangular grooves 12a, semi-elliptical grooves (semi-circular grooves) 12b, square grooves 12c, etc. as shown in FIGS. Groove), and the depth of the groove may be set individually based on the type of semiconductor device, the material of the lead frame, the design, and the shape of the groove, but it is effective in the range of about 10-40%. And, there are no obstacles. Although FIG. 1A shows an example in which the groove is provided on the inner main surface of the bent portion, the groove may be similar to the groove 22 shown in FIG. 1B provided on the outer main surface. The shape is also shown in Fig. 1c above.
It may be the same as that shown in ~ e.

〔The invention's effect〕

According to the present invention, a plurality of grooves in the longitudinal direction of the outer lead are provided only on the main surface of the bent portion, whereby the bending stress applied to the outer lead at the time of bending is relieved, and the sealing resin for the envelope and the outer lead. It is possible to prevent damage to the interface between the resin and the encapsulation resin, that is, to prevent chipping of the encapsulation resin, cracks, and gaps between the encapsulation resin,
In addition, defective forming of the outer leads, poor strength of the leads, deformation and the like were reduced. Due to the above, the quality of the semiconductor device is improved and the stability is significantly improved.

[Brief description of drawings]

FIG. 1 shows an embodiment of a semiconductor device according to the present invention.
1A and 1B are side views of the bent portion, FIGS. 1C to 1E are sectional views showing the shape of the groove, FIG. 2 is a front view of the lead frame, and FIGS. Is a perspective view of a conventional semiconductor device, and FIG. 4 is a side view of a bending portion of the conventional semiconductor device. 11 …… Outer lead 12,22 …… Outer lead groove 12a, 12b, 12c …… Groove shape

Claims (1)

[Claims] 1. In a semiconductor device in which an outer lead protruding from an envelope is bent, a plurality of grooves in the longitudinal direction of the outer lead are bent to reduce bending stress when the outer lead is bent. A semiconductor device characterized in that it is provided only on the main surface of the processed portion.