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JPH0816758B2 - Liquid crystal image display device and method of manufacturing the same - Google Patents
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JPH0816758B2 - Liquid crystal image display device and method of manufacturing the same - Google Patents

Liquid crystal image display device and method of manufacturing the same

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Publication number
JPH0816758B2
JPH0816758B2 JP3861289A JP3861289A JPH0816758B2 JP H0816758 B2 JPH0816758 B2 JP H0816758B2 JP 3861289 A JP3861289 A JP 3861289A JP 3861289 A JP3861289 A JP 3861289A JP H0816758 B2 JPH0816758 B2 JP H0816758B2
Authority
JP
Japan
Prior art keywords
liquid crystal
image display
display device
insulating substrate
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3861289A
Other languages
Japanese (ja)
Other versions
JPH02216129A (en
Inventor
清弘 川崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3861289A priority Critical patent/JPH0816758B2/en
Publication of JPH02216129A publication Critical patent/JPH02216129A/en
Publication of JPH0816758B2 publication Critical patent/JPH0816758B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は画像表示機能を有する液晶パネル、とりわけ
絵素毎にスイッチング素子を内蔵したアクティブ型の液
晶画像表示装置及びその製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal panel having an image display function, and more particularly to an active type liquid crystal image display device having a switching element for each picture element and a manufacturing method thereof.

従来の技術 近年の微細加工技術、液晶材料及び実装技術等の進歩
により2−6インチ程度の小さなサイズではあるが、液
晶パネルで実用上支障ないテレビジョン画像が商用ベー
スで得られるようになってきた。液晶パネルを構成する
2枚のガラス板の一方にRGBの着色層を形成しておくこ
とによりカラー表示も容易に実現され、また絵素毎にス
イッチング素子を内蔵させた、いわゆるアクティブ型の
液晶パネルではクロストークも少なくかつ高いコントラ
スト比を有する画像が保証される。このような液晶パネ
ルは、走査線としては120−240本、信号線としては240
−720本程度のマトリクス編成が標準的で、例えば第6
図に示すように液晶パネル1を構成する一方の透光性絶
縁性基板、例えばガラス基板2上に形成された走査線の
電極端子群6に駆動信号を供給する半導体集積回路チッ
プ3を直接接続する(COG(Chip−On−Glass)方式や、
例えばポリイミド系樹脂薄膜をベースとし、金メッキさ
れた銅箔の端子群(図示せず)を有する接続フィルム4
を信号線の電極端子群5に接着剤で圧接しながら固定す
る方式などの実装手段によって電気信号が画像表示部に
供給される。ここでは便宜上二つの実装方式を同時に図
示しているが、実際にはいずれかの実装方式が選ばれる
ことは言うまでもない。なお、7、8は液晶パネル1中
央の画像表示部と信号線及び走査線の電極端子群5、6
との間を接続する配線路で、必ずしも電極端子群と同じ
導電材で構成される必要はない。
2. Description of the Related Art Due to recent advances in microfabrication technology, liquid crystal materials, packaging technology, etc., it has become possible to obtain television images on a commercial basis that are small in size of about 2-6 inches, but are practically unproblematic for liquid crystal panels. It was A so-called active liquid crystal panel in which a color display is easily realized by forming an RGB colored layer on one of the two glass plates constituting the liquid crystal panel, and a switching element is built in for each picture element. Guarantees images with low crosstalk and a high contrast ratio. Such a liquid crystal panel has 120-240 scanning lines and 240 signal lines.
-A matrix structure of about 720 is standard, for example, the 6th
As shown in the figure, the semiconductor integrated circuit chip 3 for supplying a drive signal is directly connected to the electrode terminal group 6 of the scanning line formed on one of the translucent insulating substrates constituting the liquid crystal panel 1, for example, the glass substrate 2. (COG (Chip-On-Glass) method,
For example, a connection film 4 based on a polyimide resin thin film and having a gold-plated copper foil terminal group (not shown)
An electric signal is supplied to the image display unit by a mounting means such as a method of fixing the signal line to the electrode terminal group 5 of the signal line while pressing it with an adhesive. Here, two mounting methods are shown simultaneously for convenience, but it goes without saying that one of the mounting methods is actually selected. Reference numerals 7 and 8 denote image display portions at the center of the liquid crystal panel 1 and electrode terminal groups 5 and 6 for signal lines and scanning lines.
The wiring path connecting between the electrode terminal group and the electrode terminal group does not necessarily have to be made of the same conductive material as the electrode terminal group.

9は全ての絵素に共通の透明導電性の対向電極を有す
るもう1枚の透光性絶縁性基板であるガラス板で、2枚
のガラス板2、9は石英ファイバやプラスチックビーズ
等のスペーサによって所定の距離を隔てて形成され、そ
の間隙はシール材と封口材で封止された閉空間になって
おり、閉空間には液晶が充填されている。多くの場合、
ガラス板の閉空間側に着色層と称する染料または顔料の
いずれか一方もしくは両方を含む有機薄膜が被着されて
色表示機能が与えられるのでガラス基板9はカラーフィ
ルタと呼ばれる。そして液晶材の性質によってはガラス
板9上面またはガラス板2下面のいずれかもしくは両面
上に偏光板が貼付され、液晶パネル1は電気光学素子と
して機能する。
Reference numeral 9 is another glass plate which is a transparent insulating substrate having a transparent conductive counter electrode common to all the picture elements, and two glass plates 2 and 9 are spacers such as quartz fibers and plastic beads. Is formed with a predetermined distance, and the gap is a closed space sealed with a sealing material and a sealing material, and the closed space is filled with liquid crystal. In many cases,
The glass substrate 9 is called a color filter because an organic thin film containing one or both of a dye and a pigment called a coloring layer is applied to the closed side of the glass plate to provide a color display function. Depending on the properties of the liquid crystal material, a polarizing plate is attached to either the upper surface of the glass plate 9 or the lower surface of the glass plate 2 or both surfaces thereof, and the liquid crystal panel 1 functions as an electro-optical element.

第7図は、スイッチング素子として絶縁ゲート型トラ
ンジスタ10を絵素毎に配置したアクティブ型液晶パネル
の等価回路図であり、第8図は同パネルの要部断面図で
ある。実線で描かれた素子は一方のガラス基板2上に、
そして破線で描かれた素子はもう一方のガラス基板9上
に形成されている。走査線11(8)と信号線12(7)
は、例えば非晶質シリコンを半導体層とし、シリコン窒
化膜(Si3N4)をゲート絶縁膜とする薄膜トランジスタ1
0の形成と同時にガラス基板2上に作製される。液晶セ
ル13はガラス基板2上に形成された透明導電性の絵素電
極14と、カラーフィルタ9上に形成された同じく透明導
電性の対向電極15と、2枚のガラス板で構成された閉空
間を満たす液晶16とで構成され、電気的にはコンデンサ
と同じ扱いを受ける。
FIG. 7 is an equivalent circuit diagram of an active liquid crystal panel in which an insulated gate transistor 10 is arranged as a switching element for each picture element, and FIG. 8 is a cross-sectional view of a main part of the panel. The element drawn by the solid line is on one glass substrate 2,
The element drawn by the broken line is formed on the other glass substrate 9. Scan line 11 (8) and signal line 12 (7)
Is a thin film transistor 1 using, for example, amorphous silicon as a semiconductor layer and a silicon nitride film (Si 3 N 4 ) as a gate insulating film.
Simultaneously with the formation of 0, it is formed on the glass substrate 2. The liquid crystal cell 13 includes a transparent conductive picture element electrode 14 formed on the glass substrate 2, a transparent conductive counter electrode 15 formed on the color filter 9, and a closed It is composed of a liquid crystal 16 that fills the space, and is electrically treated the same as a capacitor.

着色された感光性ゼラチンまたは着色性感光樹脂等よ
りなる着色層17は先述したように、カラーフィルタ9の
閉空間側で絵素電極14に対応してRGBの三原色で所定の
配列に従って配置されている。全ての絵素電極14に共通
の対向電極15は着色層17の存在による電圧配分損失を避
けるためには図示したように着色層17上に形成される。
液晶16に接して2枚のガラス板上に被着された、例えば
0.1μm程度の膜厚のポリイミド系樹脂薄膜層18は液晶
分子を決められた方向に揃えるための配向膜である。加
えて液晶16にツイスト・ネマチック(TN)型のものを用
いる場合には上下に2枚の偏光板19を必要とする。
As described above, the colored layer 17 made of colored photosensitive gelatin, colored photosensitive resin, or the like is arranged in the three primary colors of RGB in a predetermined arrangement corresponding to the pixel electrodes 14 on the closed space side of the color filter 9. There is. The counter electrode 15 common to all the pixel electrodes 14 is formed on the coloring layer 17 as shown in order to avoid voltage distribution loss due to the presence of the coloring layer 17.
For example, if it is attached to two glass plates in contact with the liquid crystal 16,
The polyimide resin thin film layer 18 having a film thickness of about 0.1 μm is an alignment film for aligning liquid crystal molecules in a predetermined direction. In addition, when a twisted nematic (TN) type liquid crystal 16 is used, two polarizing plates 19 are required above and below.

RGBの着色層17の境界に低反射性の不透明膜20を配置
すると、ガラス基板2上の信号線等の配線層からの反射
光を防止できてコントラスト比が向上し、またスイッチ
ング素子10の外部光照射によるリーク電流の増大が防げ
て強い外光の下でも動作させることが可能となり、ブラ
ックマトリクスとして実用化されている。ブラックマト
リクス材の構成も多数考えられるが、着色層の境界に於
ける段差の発生状況と光の透過率を考慮すると、コスト
高にはなるが0.1μm程度の膜厚のCr薄膜が簡便であ
る。
By arranging the low-reflectivity opaque film 20 on the boundary of the RGB colored layer 17, it is possible to prevent the reflected light from the wiring layer such as the signal line on the glass substrate 2 and improve the contrast ratio, and the outside of the switching element 10. The increase in leak current due to light irradiation can be prevented, and it is possible to operate even under strong external light, which has been put to practical use as a black matrix. There are many possible configurations of black matrix material, but considering the occurrence of steps at the boundaries of the colored layers and the light transmittance, it is costly but a Cr thin film with a thickness of about 0.1 μm is simple. .

なお、第7図において蓄積容量21はアクティブ型の液
晶パネルとしては必ずしも必須の構成要素とは限らない
が、駆動用信号源の利用効率の向上、浮遊寄生容量の障
害の抑制及び高温動作時の画像のちらつき(フリッカ)
防止等には効果的存在で適宜採用される。また理解を簡
便にするため、薄膜トランジスタ、走査線11、及び蓄積
容量21に加えて光源やスペーサ等の主要因子は第8図で
は省略されている。22は絵素電極14と絶縁ゲート型トラ
ンジスタ10のドレインとを接続するための導電性薄膜
で、一般的には信号線12と同一の材質で同時に形成され
る。
In FIG. 7, the storage capacitor 21 is not always an essential component for an active liquid crystal panel, but it improves the utilization efficiency of the driving signal source, suppresses the stray parasitic capacitance failure, and operates at high temperature. Image flicker
It is effective for prevention and is appropriately adopted. Further, in order to facilitate understanding, main factors such as a light source and a spacer in addition to the thin film transistor, the scanning line 11 and the storage capacitor 21 are omitted in FIG. Reference numeral 22 is a conductive thin film for connecting the pixel electrode 14 and the drain of the insulated gate transistor 10, and is generally formed of the same material as the signal line 12 at the same time.

発明が解決しようとする課題 しかし、アクティブ型の液晶パネルにおいては、デバ
イス構造が複雑なために全ての液晶セル13が同等の条件
で駆動されにくく、従って表示画像がちらついて見える
現象が発生し易い。画像のちらつきはフリッカとも呼ば
れ、単純マトリクス編成の液晶パネルにおいても斜めか
ら観測したり、駆動信号に直流成分が多く含まれている
と発生することは公知の事実である。フリッカを低減さ
せるには全ての液晶セルが同等の駆動状態となるべく構
成素子である液晶セル13、絶縁ゲート型トランジスタ10
及び蓄積容量21を高精度で製作する方法と、隣合った液
晶セル13を逆位相で駆動し液晶パネル全体としては観測
されないように視覚的に逃れる方法とがある。前者にお
いてはアクティブ基板やパネル組み立ての製作条件が厳
しくなるだけでなく、大きい蓄積容量が必要となって歩
留まりを下げたり開口率を下げるなどの欠点がクローズ
アップされ、後者においてはフリッカは見かけ上減少し
ているものの、対向電極15を一定の電圧で保持して交流
駆動するために信号電圧が高くなり、従ってフリッカの
原因である液晶セル間の微小なばらつき直流電圧成分も
増しているため長期関の使用に対して液晶が劣化して褐
色化し、画像品質を損なうといった欠点があった。
However, in the active type liquid crystal panel, it is difficult to drive all the liquid crystal cells 13 under the same conditions because the device structure is complicated, and therefore, a phenomenon in which a displayed image flickers and is visible easily occurs. . It is a well-known fact that image flickering is also called flickering and occurs when a liquid crystal panel having a simple matrix organization is observed obliquely or when a drive signal contains a large amount of DC components. In order to reduce the flicker, all liquid crystal cells should be in the same driving state so that the liquid crystal cell 13 and the insulated gate transistor 10 are constituent elements.
Also, there is a method of manufacturing the storage capacitor 21 with high accuracy, and a method of driving adjacent liquid crystal cells 13 in opposite phases and visually escaping so that the liquid crystal panel is not observed as a whole. In the former case, not only the manufacturing conditions for active board and panel assembly become stricter, but also large defects are required due to the large storage capacity required, and defects such as lower aperture ratio are highlighted. In the latter case, flicker apparently decreases. However, since the counter electrode 15 is held at a constant voltage and is driven by an alternating current, the signal voltage becomes high, and therefore a minute variation DC voltage component between the liquid crystal cells, which is a cause of flicker, is also increased. However, there is a drawback that the liquid crystal deteriorates and browns when used, and the image quality is impaired.

本来は第8図に示したように有機薄膜の配向膜18が絶
縁性の機能を発揮して信号線12、ドレイン配線22そして
絵素電極14等の導電性電極の表面を絶縁化できれば、絵
素電極14と対向電極15と液晶層16とよりなる液相セル13
に直流電流が流れ込む事はなく、液相層16の劣化は生じ
ないはずである。ところが配向膜18は先述したように0.
1μm程度と薄いこと、一般的な配向膜の塗布方法がオ
フセット印刷のためピン・ホールを内在させ易いこと、
そしてアクティブ素子が熱破壊しないように300℃以下
の比較的低温で配向膜のキュア(熱硬化)が実施されて
いることなどの理由により配向膜18単独では信号線12、
ドレイン配線22そして絵素電極14などの表面を不完全に
しか絶縁化出来ず、程度の差はあれ液晶層16の劣化を阻
止することが困難となっている。特に信号線12には信号
電圧が外部から供給され続けるので対向電極15との間に
は直流成分が流れ易い。そこで薄い配向膜に代わって第
9図に示したようにアクティブ基板2上で全面に透明絶
縁性被膜23として、例えばSi3N4を、0.5μm程度の膜厚
でコーティングすることによって液晶層16の劣化を回避
する事が出来ることは容易に理解されよう。
Originally, as shown in FIG. 8, if the organic thin film alignment film 18 exerts an insulating function to insulate the surface of the signal line 12, the drain wiring 22, and the conductive electrodes such as the pixel electrodes 14, Liquid-phase cell 13 including element electrode 14, counter electrode 15 and liquid crystal layer 16
No direct current will flow into the liquid phase layer 16 and no deterioration of the liquid phase layer 16 should occur. However, as described above, the alignment film 18 has a thickness of 0.
It is as thin as about 1 μm, and it is easy to have pin holes inside because the general alignment film coating method is offset printing.
In order to prevent the active element from being thermally destroyed, the alignment film 18 alone is used for the signal line 12, because the alignment film is cured (heat cured) at a relatively low temperature of 300 ° C. or lower.
The surfaces of the drain wiring 22 and the pixel electrodes 14 and the like can be insulated only incompletely, and it is difficult to prevent the deterioration of the liquid crystal layer 16 to some extent. In particular, since the signal voltage is continuously supplied to the signal line 12 from the outside, a DC component easily flows between the signal line 12 and the counter electrode 15. Therefore, instead of the thin alignment film, as shown in FIG. 9, the liquid crystal layer 16 is formed by coating the entire surface of the active substrate 2 with a transparent insulating film 23, for example, Si 3 N 4 in a film thickness of about 0.5 μm. It will be easily understood that the deterioration of can be avoided.

しかしながら全面に厚いパシベーション層23を被着形
成することは製作工程が長くなるのと、絵素電極14上に
絶縁層が介在して液晶層16に印可される電圧が低下する
意味で好ましいものとは言えない状況である。後者につ
いては絵素電極14上のパシベーション層23を選択的に除
去することは可能であるが、絵素電極14上あるいは絵素
電極14のごく近傍にパシベーション層の高い段差が存在
すると配向膜18の乾燥布によるラビング処理が規則的に
行われず、液晶の配向が乱れて逆ドメインを生じ表示画
質が低下する副作用が発生していた。
However, it is preferable to form a thick passivation layer 23 over the entire surface in the sense that the manufacturing process becomes long and the voltage applied to the liquid crystal layer 16 is lowered due to the presence of the insulating layer on the pixel electrode 14. It is a situation that cannot be said. Regarding the latter, it is possible to selectively remove the passivation layer 23 on the pixel electrode 14, but if there is a high step of the passivation layer on or in the vicinity of the pixel electrode 14, the alignment film 18 The rubbing treatment with the dry cloth was not regularly performed, and the side effect was generated in which the alignment of the liquid crystal was disturbed and the reverse domain was generated to deteriorate the display image quality.

本発明は、このような従来技術の課題を解決すること
を目的とする。
The present invention aims to solve such problems of the conventional technology.

課題を解決するための手段 本発明は、Alよりなる信号線とドレイン配線上のみを
選択的に絶縁化するために陽極酸化工程を導入し、Al2O
3(アルミナ)膜を信号線とドレイン配線上に選択的に
形成するものである。
Means for Solving the Problems The present invention introduces an anodic oxidation step in order to selectively insulate only a signal line made of Al and a drain wiring, and Al 2 O
A 3 (alumina) film is selectively formed on the signal line and the drain wiring.

作用 信号線とドレイン配線上にのみ絶縁物であるアルミナ
薄膜が選択的に形成されるため、液晶層に印可される電
圧の低下はなく、またパシベーション層の被着工程は不
要となって、製作工程の短縮化が促進される。
Since the alumina thin film, which is an insulator, is selectively formed only on the signal line and drain line, there is no drop in the voltage applied to the liquid crystal layer, and the passivation layer deposition process is not required. The shortening of the process is promoted.

実施例 以下に、本発明の実施例を図面を参照して説明する。Embodiments Embodiments of the present invention will be described below with reference to the drawings.

以下、本発明の実施例について第1図から第5図を参
照しながら説明する。第1図は本発明の第1の実施例に
かかる液晶画像表示装置を構成するアクティブ基板2上
のパターンを示す。陽極酸化では酸化膜を成長させたい
配線は全て電気的に接続しておく必要があり、信号線12
は端子電極5を経由して共通の接続線23に接続され、接
続線23はガラス基板2の周辺部の、ベタパターンである
接続部24に接続されている。(ここでベタパターンと
は、後述するようにクリップ等で挟むことにより、電気
的に接続されるように選択的に残された幅広のAlパター
ンのことである。)接続線23と接続部24は信号線12と同
じAlで形成されている。第1図に示したアクティブ基板
2は、第2図に示したように化成液25で満たされた容器
26中に設置され、直流電源27より供給される+(プラ
ス)端子28はアクティブ基板2の接続部24にクリップ等
の治具を用いて接続され、また−(マイナス)端子29は
金や白金等の電極板30に接続される。Alの陽極酸化に当
り、蓚酸や硫酸を主成分とする化成液では有孔性の酸化
アルミナウム(アルミナ、Al2O3)が成長し、ほう酸を
含むエチレングリコール化成液では無孔性の緻密なアル
ミナが成長する事は公知であるが、Alの陽極酸化の詳細
については先願例である特公昭59−34798号公報に示さ
れている。何れにせよ、陽極酸化においては化成液の濃
度と温度が一定の下では成長する酸化膜の膜厚は化成電
圧によって決定されるので、適当な条件を選定すれば第
3図に示したように例えば1μmの膜厚を有するAlの信
号線12上に0.1−0.3μm程度のアルミナ膜31を形成する
ことは極めて容易である。ドレイン配線22には絶縁ゲー
ト型トランジスタのチャネル抵抗を通していくらかの電
流が流れるので、陽極酸化時に強い外光をアクティブ基
板2に照射するとチャネル抵抗が低下してドレイン配線
22の表面にも酸化膜32が成長しやすいが、チャネル抵抗
はAlに比べると桁違いに抵抗が高いので、ドレイン配線
22上にも信号線12と同じ膜厚のアルミナ膜が成長するま
で陽極酸化を長時間継続することは非効率的であろう。
陽極酸化終了後には、第1図に示したようにアクティブ
基板2を切断線33に沿って切断すれば、接続線23の切断
とともに電極端子5が独立してアクティブ基板2が完成
する。
Embodiments of the present invention will be described below with reference to FIGS. 1 to 5. FIG. 1 shows a pattern on an active substrate 2 which constitutes a liquid crystal image display device according to a first embodiment of the present invention. In anodic oxidation, it is necessary to electrically connect all the wirings on which the oxide film is to be grown.
Are connected to a common connection line 23 via the terminal electrode 5, and the connection line 23 is connected to a connection part 24, which is a solid pattern, in the peripheral part of the glass substrate 2. (Here, the solid pattern is a wide Al pattern selectively left so as to be electrically connected by being sandwiched by a clip or the like as described later.) The connection line 23 and the connection portion 24 Is formed of the same Al as the signal line 12. The active substrate 2 shown in FIG. 1 is a container filled with the chemical conversion liquid 25 as shown in FIG.
The positive (+) terminal 28, which is installed in the DC power supply 27, is connected to the connecting portion 24 of the active substrate 2 by using a jig such as a clip, and the negative (-) terminal 29 is gold or platinum. Etc. is connected to the electrode plate 30. Upon anodic oxidation of Al, porous alumina oxide (alumina, Al 2 O 3 ) grows in the chemical conversion liquid containing oxalic acid or sulfuric acid as the main component, and non-porous dense aluminum oxide conversion liquid containing boric acid. Although it is known that alumina grows, details of anodic oxidation of Al are disclosed in Japanese Patent Publication No. 59-34798, which is a prior application example. In any case, in anodic oxidation, when the concentration and temperature of the chemical conversion solution are constant, the film thickness of the growing oxide film is determined by the chemical conversion voltage. Therefore, if appropriate conditions are selected, as shown in FIG. For example, it is extremely easy to form the alumina film 31 of about 0.1-0.3 μm on the Al signal line 12 having a film thickness of 1 μm. Since some current flows through the drain wiring 22 through the channel resistance of the insulated gate transistor, if strong external light is applied to the active substrate 2 during anodization, the channel resistance will decrease and
The oxide film 32 easily grows on the surface of 22, but the channel resistance is an order of magnitude higher than that of Al.
It would be inefficient to continue the anodic oxidation for a long time until the alumina film having the same film thickness as the signal line 12 grows on 22 as well.
After completion of the anodic oxidation, as shown in FIG. 1, if the active substrate 2 is cut along the cutting line 33, the connection terminal 23 is cut and the electrode terminals 5 are independently formed to complete the active substrate 2.

電極端子がCOG対応で小さな場合にはアクティブ基板
2の切断によって電極端子を独立させることは困難であ
る。そのような場合には接続線23上に例えば感光性樹脂
パターンを選択的に形成しておき、陽極酸化終了後にま
ず前記感光性樹脂パターンを除去し、ついでアルミナ膜
を食刻のマスクとしてAlを選択的に除去すれば電極端子
を独立させることが可能となる。
If the electrode terminals are COG-compatible and small, it is difficult to separate the electrode terminals by cutting the active substrate 2. In such a case, for example, a photosensitive resin pattern is selectively formed on the connection line 23, the photosensitive resin pattern is first removed after completion of anodization, and then the alumina film is used as an etching mask for Al. If selectively removed, the electrode terminals can be made independent.

第1の実施例においては、アクティブ基板2の表面が
露出しており、化成液の純度管理が不十分であると化成
液中のイオン性不純物が絶縁ゲート型トランジスタに混
入してトランジスタ特性が不安定になる恐れと、信号線
の両端を接続線に接続しておくパターン配置上の余裕が
あれば対策は容易であるが、信号線に断線部が存在して
いる場合には陽極酸化膜が成長しない領域が発生する欠
点がある。
In the first embodiment, since the surface of the active substrate 2 is exposed and the purity control of the chemical conversion liquid is insufficient, ionic impurities in the chemical conversion liquid mix into the insulated gate type transistor, resulting in poor transistor characteristics. Countermeasures are easy if there is a margin in the pattern layout that connects both ends of the signal line to the connection line, but if the signal line has a disconnection, the anodic oxide film may be removed. There is a drawback that some regions do not grow.

第2の実施例においては、第4図に示すように、信号
線(ソース配線)とドレイン配線となるAl層34の被着後
に前記パターンの逆パターンで感光性樹脂層35を周知の
ホトリソ・グラフィ工程で形成し、逆パターン35を陽極
酸化のマスクとしてAl層34の表面を選択的に陽極酸化し
て36、37としている。陽極酸化終了後に、感光性樹脂パ
ターン35を除去し、陽極酸化膜36、37をマスクとしてAl
層34を選択的に食刻して第5図に示すアクティブ基板2
が完成する。化成液中の不純物は陽極酸化膜中に取り込
まれ、絶縁ゲート型トランジスタの電気的な特性が不安
定となる恐れは回避されている。
In the second embodiment, as shown in FIG. 4, the photosensitive resin layer 35 is formed by a well-known photolithography method in the reverse pattern of the above pattern after the Al layer 34 serving as the signal line (source wiring) and the drain wiring is deposited. The surface of the Al layer 34 is selectively anodized using the reverse pattern 35 as a mask for the anodization to form 36 and 37. After the anodic oxidation is completed, the photosensitive resin pattern 35 is removed, and the anodic oxide films 36 and 37 are used as masks for Al.
The active substrate 2 shown in FIG. 5 is formed by selectively etching the layer 34.
Is completed. Impurities in the chemical conversion liquid are taken into the anodic oxide film, which avoids the risk of unstable electrical characteristics of the insulated gate transistor.

第3図においては信号線12とドレイン配線22の全表面
がアルミナ膜31、32によってコーティングされている
が、第5図においては信号線12上とドレイン配線22上と
がアルミナ膜36、37でコーティングされ、信号線12とド
レイン配線22の側面はAlが露出している差異がある。信
号線12とドレイン配線22のパターン幅は一般的には10μ
m程度であるので、液晶16層の純度を充分に高く維持出
来るように、液晶材料や配向膜の不純物、とりわけイオ
ン性の不純物を除外できるならば、第2の実施例におい
てもイオン性の不純物による直流電流成分は従来例に比
べて1/5程度に減少するので液晶の劣化は大幅に改善さ
れることが理解されよう。
In FIG. 3, the entire surfaces of the signal line 12 and the drain wiring 22 are coated with alumina films 31 and 32, but in FIG. 5, the signal line 12 and the drain wiring 22 are covered with alumina films 36 and 37. The side surfaces of the signal line 12 and the drain wiring 22 which are coated are different in that Al is exposed. The pattern width of the signal line 12 and the drain wiring 22 is generally 10 μm.
Since it is about m, if impurities of the liquid crystal material and the alignment film, especially ionic impurities can be excluded so that the purity of the liquid crystal 16 layer can be maintained sufficiently high, ionic impurities are also used in the second embodiment. It can be understood that the DC current component due to is reduced to about 1/5 of that of the conventional example, so that the deterioration of the liquid crystal is significantly improved.

アクティブ基板の構成に関し、絵素電極が厚み方向で
どの位置に形成されるかは絶縁ゲート型トランジスタの
構造と製作方法によって大きく左右されるので、上記説
明においては省略した。絵素電極は絶縁ゲート型トラン
ジスタによって信号線とはスイッチ的にしか導通しない
ので、絵素電極と絶縁ゲート型トランジスタとを接続す
るドレイン配線は必ずしも表面を絶縁化する必要はない
が、絶縁ゲート型トランジスタが常時ONするような欠陥
が存在すると、その近辺で液晶の劣化が生じる可能性が
高く、本発明のようにドレイン配線も絶縁化する方が好
ましい。同じ理由で、絵素電極もアクティブ基板上の最
上層部に位置するのではなく、透明絶縁性のSiO2やSi3N
4が絵素電極上に被着されている方が信頼性の高い液晶
画像表示装置が得られる。また信号線が絶縁ゲート型ト
ランジスタのソース配線を兼ねず、かつ絶縁性被膜で覆
われていないような場合にはソース配線に対して信号線
と同様な処置が必要なことは説明を要しないであろう。
With respect to the structure of the active substrate, the position where the pixel electrode is formed in the thickness direction largely depends on the structure of the insulated gate transistor and the manufacturing method thereof, and is therefore omitted in the above description. Since the picture element electrode is insulated only from the signal line by the insulated gate transistor, it is not necessary to insulate the surface of the drain wiring connecting the picture element electrode and the insulated gate transistor. If there is a defect that the transistor is always turned on, there is a high possibility that the liquid crystal will be deteriorated in the vicinity of the defect, and it is preferable that the drain wiring is also insulated as in the present invention. For the same reason, the pixel electrodes are not located on the top layer of the active substrate, but instead of transparent insulating SiO 2 or Si 3 N.
A more reliable liquid crystal image display device can be obtained when 4 is deposited on the pixel electrodes. In addition, if the signal line does not also serve as the source wiring of the insulated gate transistor and is not covered with an insulating film, it is not necessary to explain that the same treatment as the signal line is necessary for the source wiring. Ah

発明の効果 以上述べたように、本発明は、液晶セルに流入して液
晶を劣化させる直流成分を阻止または大幅に減少させる
ために、Alより成る信号線とドレイン配線の表面を絶縁
性のアルミナ膜でコーティングしている。このためフリ
ッカレス駆動を採用して高い信号電圧を印加しても液晶
層が劣化して表示画像が褐色に着色してみえる品質上の
課題を解決した。また特に膜厚を増加することなく信号
線とドレイン配線の表面を絶縁化できることにより、従
来の透明絶縁性薄膜による全面パシベーションと比べて
液晶セルに実効的に供給される電圧の低下を防ぐことが
可能となり、表示画像が暗くなる恐れは皆無であり、配
向膜の配向状態も維持できる等の優れた効果が得られ
た。
As described above, according to the present invention, in order to prevent or significantly reduce the direct current component that flows into the liquid crystal cell and deteriorates the liquid crystal, the surfaces of the signal line and drain wiring made of Al are made of insulating alumina. It is coated with a film. Therefore, even if a high signal voltage is applied by adopting flickerless driving, the liquid crystal layer is deteriorated and the display image is colored brown and the quality problem is solved. In addition, since the surface of the signal line and the drain wiring can be insulated without increasing the film thickness, it is possible to prevent a decrease in the voltage effectively supplied to the liquid crystal cell as compared with the conventional overall passivation using a transparent insulating thin film. It was possible, and there was no possibility that the displayed image would be dark, and the excellent effect of maintaining the alignment state of the alignment film was obtained.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の第1の実施例にかかる液晶画像表示装
置を構成するアクティブ基板上のパターン図、第2図は
同装置における陽極酸化方法を示す概念的断面図、第3
図は同装置の基板の要部断面図、第4図と第5図は本発
明の第2の実施例にかかる液晶画像表示装置を構成する
アクティブ基板の製造工程における要部断面図、第6図
は液晶パネルへの実装手段を示す斜視図、第7図はアク
ティブ型液晶パネルの等価回路図、第8図は同パネルの
要部断面図、第9図は液晶の劣化を防ぐために実施され
た従来例のアクティブ基板上のパシベーションを示す断
面図である。 1……液晶パネル、2……ガラス板、9……カラーフィ
ルタ、10……絶縁ゲート型トランジスタ、11……走査
線、12……信号線、13……液晶セル、14……絵素電極、
15……対向電極、16……液晶、18……配向膜、22……ド
レイン配線、23……接続線、24……ベたパターン、25…
…化成液、26……容器、27……直流電源、28……+(プ
ラス)端子、29……−(マイナス)端子、30……電極
板、31、36……信号線上のアルミナ膜、32、37……ドレ
イン配線上のアルミナ膜、33……切断線、34……Al層、
35……感光性樹脂パターン。
FIG. 1 is a pattern diagram on an active substrate constituting a liquid crystal image display device according to a first embodiment of the present invention, FIG. 2 is a conceptual sectional view showing an anodizing method in the device, and FIG.
FIG. 4 is a cross-sectional view of a main part of a substrate of the same device, and FIGS. 4 and 5 are cross-sectional views of a main part in a manufacturing process of an active substrate which constitutes a liquid crystal image display device according to a second embodiment of the present invention. FIG. 7 is a perspective view showing a mounting means on a liquid crystal panel, FIG. 7 is an equivalent circuit diagram of an active type liquid crystal panel, FIG. 8 is a cross-sectional view of a main part of the panel, and FIG. 9 is carried out to prevent deterioration of liquid crystal. It is sectional drawing which shows the passivation on the active substrate of the conventional example. DESCRIPTION OF SYMBOLS 1 ... Liquid crystal panel, 2 ... Glass plate, 9 ... Color filter, 10 ... Insulated gate transistor, 11 ... Scanning line, 12 ... Signal line, 13 ... Liquid crystal cell, 14 ... Picture electrode ,
15 …… Counter electrode, 16 …… Liquid crystal, 18 …… Alignment film, 22 …… Drain wiring, 23 …… Connecting wire, 24 …… Solid pattern, 25…
… Chemical solution, 26 …… Container, 27 …… DC power supply, 28 …… + (plus) terminal, 29 …… – (minus) terminal, 30 …… electrode plate, 31, 36 …… Alumina film on signal line, 32, 37 …… Alumina film on drain wiring, 33 …… Cutting line, 34 …… Al layer,
35: Photosensitive resin pattern.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】複数本の走査線と信号線とを有し、単位絵
素毎に絶縁ゲート型トランジスタと絵素電極とを有する
第1の透光性絶縁性基板と、透明導電性の対向電極を有
する第2の透光性絶縁性基板との間に液晶を充填してな
る液晶画像表示装置において、前記第1の透光性絶縁性
基板上で最上層に位置し前記液晶と接する前記信号線が
その表面を陽極酸化されたアルミニウムよりなり、前記
液晶とは電気的に絶縁されていることを特徴とする液晶
画像表示装置。
1. A first light-transmissive insulating substrate having a plurality of scanning lines and signal lines, and having an insulated gate transistor and a pixel electrode for each unit pixel, and a transparent conductive counter substrate. A liquid crystal image display device in which liquid crystal is filled between a second translucent insulating substrate having an electrode, wherein the liquid crystal image display device is located on the uppermost layer on the first translucent insulating substrate and is in contact with the liquid crystal. A liquid crystal image display device, wherein the signal line is made of aluminum whose surface is anodized, and is electrically insulated from the liquid crystal.
【請求項2】複数本の走査線と信号線とを有し、単位絵
素毎に絶縁ゲート型トランジスタと絵素電極とを有する
第1の透光性絶縁性基板と、透明導電性の対向電極を有
する第2の透光性絶縁性基板との間に液晶を充填してな
る液晶画像表示装置において、前記第1の透光性絶縁性
基板上で最上層に位置し前記液晶と接する前記信号線と
前記絶縁ゲート型トランジスタのドレイン配線とがその
表面を等しくない厚みで陽極酸化されたアルミニウムよ
りなり、前記液晶とは電気的に絶縁されていることを特
徴とする液晶画像表示装置。
2. A first translucent insulating substrate having a plurality of scanning lines and signal lines, and having an insulated gate transistor and a pixel electrode for each unit pixel, and a transparent conductive counter substrate. A liquid crystal image display device in which liquid crystal is filled between a second translucent insulating substrate having an electrode, wherein the liquid crystal image display device is located on the uppermost layer on the first translucent insulating substrate and is in contact with the liquid crystal. A liquid crystal image display device, characterized in that the signal line and the drain wiring of the insulated gate transistor are made of anodized aluminum whose surfaces are not equal in thickness, and are electrically insulated from the liquid crystal.
【請求項3】複数本の走査線と信号線とを有し、単位絵
素毎に絶縁ゲート型トランジスタと絵素電極とを有する
第1の透光性絶縁性基板と、透明導電性の対向電極を有
する第2の透光性絶縁性基板との間に液晶を充填してな
る液晶画像表示装置において、前記第1の透光性絶縁性
基板上で最上層に位置し前記液晶と接する前記信号線と
前記絶縁ゲート型トランジスタのドレイン配線とがその
側面を除いて表面を等しい厚みで陽極酸化されたアルミ
ニウムよりなり、前記液晶とは電気的に絶縁されている
ことを特徴とする液晶画像表示装置。
3. A first light-transmissive insulating substrate having a plurality of scanning lines and signal lines, and having an insulated gate transistor and a pixel electrode for each unit pixel, and a transparent conductive counter substrate. A liquid crystal image display device in which liquid crystal is filled between a second translucent insulating substrate having an electrode, wherein the liquid crystal image display device is located on the uppermost layer on the first translucent insulating substrate and is in contact with the liquid crystal. A liquid crystal image display characterized in that the signal line and the drain wiring of the insulated gate transistor are made of anodized aluminum with the same thickness on the surface except the side surface thereof, and are electrically insulated from the liquid crystal. apparatus.
【請求項4】複数本の走査線と信号線とを有し、単位絵
素毎に絶縁ゲート型トランジスタと絵素電極とを有する
第1の透光性絶縁性基板と、透明導電性の対向電極を有
する第2の透光性絶縁性基板との間に液晶を充填してな
る液晶画像表示装置の製造方法において、前記第1の透
光性絶縁性基板上で最上層に位置し前記液晶と接する前
記信号線と前記絶縁ゲート型トランジスタのドレイン配
線との形成にあたり、アルミニウムの被着後、前記信号
線と前記ドレイン配線の逆パターンの感光性樹脂パター
ンを前記アルミニウムの上に選択的に形成し、前記アル
ミニウムを選択的に陽極酸化後、前記感光性樹脂パター
ンを除去し、前記陽極酸化部をエッチングマスクとして
前記アルミニウムを除去することを特徴とする液晶画像
表示装置の製造方法。
4. A first translucent insulating substrate having a plurality of scanning lines and signal lines, and having an insulated gate transistor and a pixel electrode for each unit pixel, and a transparent conductive counter substrate. A method for manufacturing a liquid crystal image display device, comprising filling a liquid crystal between a second transparent insulating substrate having an electrode, wherein the liquid crystal is located on the uppermost layer on the first transparent insulating substrate. In forming the signal line in contact with the drain wiring of the insulated gate transistor, a photosensitive resin pattern having a reverse pattern of the signal line and the drain wiring is selectively formed on the aluminum after deposition of aluminum. Then, after selectively anodizing the aluminum, the photosensitive resin pattern is removed, and the aluminum is removed using the anodized portion as an etching mask, thereby manufacturing the liquid crystal image display device. .
JP3861289A 1989-02-17 1989-02-17 Liquid crystal image display device and method of manufacturing the same Expired - Fee Related JPH0816758B2 (en)

Priority Applications (1)

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JP3861289A JPH0816758B2 (en) 1989-02-17 1989-02-17 Liquid crystal image display device and method of manufacturing the same

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JP3861289A JPH0816758B2 (en) 1989-02-17 1989-02-17 Liquid crystal image display device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH02216129A JPH02216129A (en) 1990-08-29
JPH0816758B2 true JPH0816758B2 (en) 1996-02-21

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JPS6276545A (en) * 1985-09-30 1987-04-08 Toshiba Corp Drive circuit substrate for display device
JPH07118543B2 (en) * 1986-03-04 1995-12-18 松下電器産業株式会社 Thin film transistor and manufacturing method thereof
JPS62227130A (en) * 1986-03-28 1987-10-06 Nec Corp Active matrix type liquid crystal display device
JPS62257130A (en) * 1986-04-30 1987-11-09 Sharp Corp Liquid crystal display device

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