JPH0817058B2 - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH0817058B2 JPH0817058B2 JP1044731A JP4473189A JPH0817058B2 JP H0817058 B2 JPH0817058 B2 JP H0817058B2 JP 1044731 A JP1044731 A JP 1044731A JP 4473189 A JP4473189 A JP 4473189A JP H0817058 B2 JPH0817058 B2 JP H0817058B2
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- Japan
- Prior art keywords
- dielectric
- weight
- temperature
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- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000203 mixture Substances 0.000 title claims description 29
- 229910052573 porcelain Inorganic materials 0.000 title claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000013329 compounding Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 150000002611 lead compounds Chemical class 0.000 claims description 2
- 239000002131 composite material Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 238000010304 firing Methods 0.000 description 9
- 239000003112 inhibitor Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 3
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 241000120020 Tela Species 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) この発明は誘電体磁器組成物に関し、特に、誘電率が
2500以上と高くかつ温度に対する静電容量の変化率が小
さく、比抵抗が1010Ωcm以上と大きい誘電体磁器組成物
に関する。TECHNICAL FIELD The present invention relates to a dielectric ceramic composition, and particularly,
The present invention relates to a dielectric ceramic composition having a high value of 2500 or more, a small rate of change in capacitance with temperature, and a large specific resistance of 10 10 Ωcm or more.
(従来技術および発明が解決しようとする課題) 従来、高誘電率系磁器コンデンサ材料としてBaTiO3を
主体とした誘電体磁器組成物がある。しかし、これらの
磁器組成物においては、温度に対する静電容量の変化率
がJIS規格のB特性(−25℃〜+85℃においてΔC/C20=
±10%)を満足するものは室温での誘電率が2000と低
い。(Prior Art and Problems to be Solved by the Invention) Conventionally, there is a dielectric ceramic composition mainly composed of BaTiO 3 as a high dielectric constant type ceramic capacitor material. However, in these porcelain compositions, the rate of change of capacitance with temperature is the JIS standard B characteristic (ΔC / C 20 = -25 ° C to + 85 ° C).
Those satisfying ± 10%) have a low dielectric constant of 2000 at room temperature.
一方、鉛複合ペロブスカイト誘電体磁器組成物におい
て、比誘電率が10000以上で焼結温度が1050℃以下とい
う組成物はすでに知られている。しかし、これらの組成
物は、温度に対する静電容量の変化率が−25℃〜+85℃
の範囲で−50%〜+30%と大きい欠点を有していた。そ
こで、温度に対する静電容量の変化率が小さく、かつ高
誘電率である組成物が望まれていた。On the other hand, as a lead composite perovskite dielectric ceramic composition, a composition having a relative dielectric constant of 10,000 or more and a sintering temperature of 1050 ° C. or less is already known. However, these compositions have a rate of change in capacitance with temperature of -25 ° C to + 85 ° C.
It had a large defect of -50% to + 30% in the range of. Therefore, a composition having a small rate of change in capacitance with temperature and a high dielectric constant has been desired.
また、酸化鉛を含む誘電体磁器組成物を用いて積層コ
ンデンサを製造するに当たっては、各誘電体材料層の間
に内部電極が介在されるが、酸化鉛を含む誘電体材料を
還元性雰囲気中で焼成すると、一般に絶縁特性が損なわ
れるために、内部電極材料としては、酸化性雰囲気中で
焼成しても酸化,溶解せず、また誘電体と反応しない安
定な銀−パラジウム合金等の貴金属が一般的に用いられ
る。しかしながら、銀−パラジウム合金の材料は高価で
あり、また、銀のマイグレーションにより特性が劣化し
たり、導電率が小さいため等価直列抵抗が大きくなるな
どの欠点を有している。In manufacturing a multilayer capacitor using a dielectric ceramic composition containing lead oxide, internal electrodes are interposed between the dielectric material layers, but the dielectric material containing lead oxide is placed in a reducing atmosphere. In general, since the insulating properties are impaired when fired at 1, a stable noble metal such as a silver-palladium alloy that does not oxidize or dissolve even if fired in an oxidizing atmosphere and does not react with a dielectric is used as the internal electrode material. Commonly used. However, the material of the silver-palladium alloy is expensive and has the drawbacks that the characteristics are deteriorated by migration of silver and the equivalent series resistance is increased due to the small conductivity.
つまり、積層コンデンサには、第1に誘電体磁器が高
誘電率であること、第2に誘電体磁器の温度に対する静
電容量の変化率が小さいこと、第3にマイグレーション
の心配かなくかつ導電率の大きい内部電極が用いられる
ことの3点が望まれている。また、上述の第3の要望に
答える電極として、安価な銅または銅系の合金材料があ
るが、これを用いるためには、還元雰囲気下で焼成して
も比抵抗が高い誘電体磁器でなければならない。That is, in the multilayer capacitor, firstly, the dielectric porcelain has a high dielectric constant, secondly, the rate of change of the capacitance with respect to the temperature of the dielectric porcelain is small, and thirdly, there is no fear of migration and the conductivity is low. It is desired to use three internal electrodes having a high rate. Further, as an electrode that meets the above-mentioned third demand, there is an inexpensive copper or copper-based alloy material, but in order to use this, it must be a dielectric porcelain having a high specific resistance even if fired in a reducing atmosphere. I have to.
それゆえに、この発明の主たる目的は、高誘電率を有
し、温度に対する静電容量の変化率が小さく、かつ、還
元雰囲気中で焼成しても比抵抗が高い、誘電体磁器組成
物を提供することである。Therefore, the main object of the present invention is to provide a dielectric ceramic composition having a high dielectric constant, a small rate of change in capacitance with temperature, and a high specific resistance even when fired in a reducing atmosphere. It is to be.
(課題を解決するための手段) この発明は、Pb(Mg1/2W1/2)O3-PbTiO3の組成物を
構成する個々の化合物の配合比(モル%)が、それぞ
れ、Pb(Mg1/2W1/2)O3:55.0〜70.0、PbTiO3:30.0〜4
5.0の範囲にある主成分を100重量%としたとき、副成分
としてZnOを0.1重量%以上2.0重量%以下の範囲内で含
有する誘電体成分に、一般式aLi2O+b(RO)+cB2O3+
(1−a−b−c)SiO2で表される成分において、a,b,
cの値が、それぞれ、0≦a<0.2、0.1≦b<0.55、0
≦c<0.4(ただし、ROは、BaO,CaO,SrOおよびMgOの中
の1種以上)の範囲内にある鉛複合ペロブスカイト用還
元防止剤を0.05重量%以上6重量%以下含有する、誘電
体磁器組成物である。(Means for Solving the Problems) The present invention is based on the fact that the compounding ratio (mol%) of the individual compounds constituting the composition of Pb (Mg 1/2 W 1/2 ) O 3 -PbTiO 3 is Pb (Mg 1/2 W 1/2 ) O 3 : 55.0 to 70.0, PbTiO 3 : 30.0 to 4
When the main component in the range of 5.0 is 100% by weight, the dielectric component containing ZnO in the range of 0.1% by weight or more and 2.0% by weight or less as a sub-component is added to the general formula aLi 2 O + b (RO) + cB 2 O. 3 +
In the component represented by (1-a-b-c) SiO 2 , a, b,
The values of c are 0 ≦ a <0.2, 0.1 ≦ b <0.55, 0, respectively.
A dielectric material containing 0.05 wt% or more and 6 wt% or less of a lead composite perovskite reduction inhibitor within the range of ≦ c <0.4 (where RO is at least one of BaO, CaO, SrO, and MgO). It is a porcelain composition.
(発明の効果) この発明によれば、温度に対する静電容量の変化率が
小さくかつ誘電率が大きく、しかも、たとえば銅電極が
酸化しない還元雰囲気中で焼成しても比抵抗および誘電
損失などの電気的特性が劣化しない、誘電体磁器組成物
が得られる。(Effects of the Invention) According to the present invention, the rate of change of capacitance with respect to temperature is small and the dielectric constant is large, and further, for example, even if firing is performed in a reducing atmosphere in which the copper electrode does not oxidize, the resistivity and the dielectric loss are reduced. A dielectric porcelain composition having no deterioration in electrical characteristics can be obtained.
くわしく述べると、この発明に係る組成物の主成分で
あるPb(Mg1/2W1/2)O3-PbTiO3系誘電体磁器組成物に
ついては、N.N.Kraink and A.I.Agrarovskaya(Fiziko
Tverdogo Tela,Vo2,No1.pp70〜72Jarnary,1960)によっ
て提案されているが、容量温度変化率が±50%と大き
く、かつ比抵抗に関することは述べられていない。More specifically, regarding the Pb (Mg 1/2 W 1/2 ) O 3 -PbTiO 3 -based dielectric porcelain composition which is the main component of the composition according to the present invention, NNKraink and AIAgrarovskaya (Fiziko
Tverdogo Tela, Vo2, No1.pp70-72Jarnary, 1960), but the rate of change in capacity with temperature is as large as ± 50%, and the specific resistance is not mentioned.
それに対して、この発明では、Pb(Mg1/2W1/2)O3-P
bTiO3よりなる2成分系にZnOを添加した誘電体成分と鉛
複合ペロブスカイト用還元防止剤とを混合することで、
誘電率が2500以上と高く、温度に対する静電容量の変化
率がJIS規格のB特性(−25℃〜+85℃においてΔC/C20
=±10%)を満足し、かつ比抵抗が1010Ωcm以上であ
り、焼成温度が900〜1050℃と低く、銅電極が酸化しな
い低酸素分圧雰囲気中で焼成できる、誘電体磁器組成物
が得られたのである。On the other hand, in the present invention, Pb (Mg 1/2 W 1/2 ) O 3 -P
By mixing a ZnO-added dielectric component in a two-component system made of bTiO 3 with a lead composite perovskite reduction inhibitor,
High permittivity of 2500 or more, and change rate of capacitance with temperature are JIS standard B characteristics (at -25 ℃ to + 85 ℃, ΔC / C 20
= ± 10%), the specific resistance is 10 10 Ωcm or more, the firing temperature is as low as 900 to 1050 ° C., and the firing is possible in a low oxygen partial pressure atmosphere in which the copper electrode is not oxidized. Was obtained.
この発明の上述の目的は,その他の目的,特徴および
利点は、以下の実施例の詳細な説明から一層明らかとな
ろう。The above objects, other objects, features and advantages of the present invention will be more apparent from the detailed description of the embodiments below.
(実施例) 鉛複合ペロブスカイトの誘電体の原料として、Pb3O4,
MgO,WO3,TiO2,ZnO,MnO2を、別表1および別表2に示す
組成となるように秤量し、それらをボールミルで16時間
湿式混合した後、蒸発乾燥して混合粉末を得た。(Example) As a raw material of a dielectric material of a lead composite perovskite, Pb 3 O 4 ,
MgO, WO 3 , TiO 2 , ZnO, and MnO 2 were weighed so as to have the compositions shown in Tables 1 and 2, wet-mixed in a ball mill for 16 hours, and then evaporated to dryness to obtain a mixed powder.
得られた混合粉末をジルコニア質の匣に入れて680℃
で2時間焼成した後、200メッシュの篩を通過するよう
に粗粉砕して鉛複合ペロブスカイト粉末を準備した。The obtained mixed powder is put in a zirconia-like box and 680 ℃
After firing for 2 hours, it was roughly pulverized so as to pass through a 200-mesh sieve to prepare a lead composite perovskite powder.
さらに、別表1および別表2に示した組成の鉛複合ペ
ロブスカイト用還元防止剤が得られるように、各成分の
酸化物,炭酸塩あるいは水酸化物を調合し、これらをボ
ールミルで16時間湿式混合し粉砕した後、蒸発乾燥して
粉末を得た。得られた粉末を、アルミナ製のるつぼに入
れて1300℃の温度で1時間放置してから急冷してガラス
化した後、200メッシュの篩を通過するように粗粉砕し
て、鉛複合ペロブスカイト用還元防止剤を準備した。Further, oxides, carbonates or hydroxides of the respective components were blended so as to obtain the lead anti-reduction agent for lead composite perovskite having the compositions shown in Appendix 1 and Appendix 2, and these were wet mixed in a ball mill for 16 hours. After crushing, it was evaporated to dryness to obtain a powder. The resulting powder is placed in an alumina crucible, left at 1300 ° C for 1 hour, then rapidly cooled to vitrify, then coarsely crushed to pass through a 200-mesh sieve, and for lead-composite perovskite A reduction inhibitor was prepared.
次に、準備した鉛複合ペロブスカイト粉末に鉛複合ペ
ロブスカイト用還元防止剤のガラス化したものを別表1
および別表2に示す割合で添加し、これにポリビニルブ
チラール系のバインダおよび有機溶媒を加えてボールミ
ルで16時間湿式混合した。そして、これをドクターブレ
イド法によりシート状のグリーンシートに成型し乾燥
後、そのグリーンシートを適当な大きさにカットした。
それから、カットしたグリーンシートにスクリーン印刷
法で銅電極ペーストを用いて印刷した後、それらを圧着
し積層した。Next, the prepared lead-composite perovskite powder with vitrification of the lead-composite perovskite reducing agent is shown in Appendix 1
Then, a polyvinyl butyral binder and an organic solvent were added thereto, and the mixture was wet-mixed in a ball mill for 16 hours. Then, this was molded into a sheet-shaped green sheet by the doctor blade method, dried, and then cut into an appropriate size.
Then, the cut green sheets were printed with a copper electrode paste by a screen printing method, and then they were pressure-bonded and laminated.
圧着したグリーンシートをきまった規格にカットした
後、その両端面に外部電極として銅ペーストを塗布し
て、積層生ユニットの形成した。After the pressure-bonded green sheet was cut to a specified standard, copper paste was applied as an external electrode to both end surfaces of the green sheet to form a laminated unit.
このようにして形成した積層生ユニットを、H2,H2Oお
よびN2の混合ガスを用いて、銅電極が酸化しない還元雰
囲気に調節した電気炉を入れて、900〜1050℃で2時間
焼成して、積層コンデンサ(試料)を得た。The laminated unit thus formed was placed in an electric furnace adjusted to a reducing atmosphere in which a copper electrode did not oxidize using a mixed gas of H 2 , H 2 O and N 2 , and the mixture was heated at 900 to 1050 ° C for 2 hours. Firing was performed to obtain a multilayer capacitor (sample).
得られた積層コンデンサ(試料)について、ふくしん
液に漬けて焼結度の試験を行い、最適焼成温度を決定し
た。The obtained multilayer capacitor (sample) was immersed in a drip solution and tested for the degree of sintering to determine the optimum firing temperature.
また、各試料について、25℃の温度における1KHz,1Vr
msでの誘電率(ε),誘電損失(tanδ),比抵抗およ
び−25〜+85℃の温度範囲で+20℃を基準にした誘電率
の温度特性を測定した。この測定結果を別表1および別
表2に示した。For each sample, 1KHz, 1Vr at 25 ℃
The dielectric constant (ε) in ms, the dielectric loss (tan δ), the specific resistance, and the temperature characteristics of the dielectric constant based on + 20 ° C in the temperature range of -25 to + 85 ° C were measured. The measurement results are shown in Tables 1 and 2.
別表1および別表2において、温度特性について、B,
C,DおよびFの各特性はJIS規格による温度特性を意味
し、各特性について詳細に説明すれば次のとおりであ
る。In Tables 1 and 2, regarding the temperature characteristics, B,
Each characteristic of C, D and F means a temperature characteristic according to JIS standard, and each characteristic will be described in detail as follows.
B特性:20℃における静電容量を基準として、−25℃〜
+85℃における容量変化率が−10〜+10%を超えない。B characteristic: -25 ℃ ~ based on capacitance at 20 ℃
The rate of change in capacity at + 85 ° C does not exceed -10 to + 10%.
C特性:20℃における静電容量を基準として−25℃〜+8
5℃における容量変化率が−20〜+20%を超えない。C characteristics: -25 ℃ to +8 based on capacitance at 20 ℃
The rate of change in capacity at 5 ° C does not exceed -20 to + 20%.
D特性:20℃における静電容量を基準として、−25℃〜
+85℃における容量変化率が−30〜+20%を超えない。D characteristic: -25 ℃ ~ based on capacitance at 20 ℃
The rate of change in capacity at + 85 ° C does not exceed -30 to + 20%.
F特性:20℃における静電容量を基準として、−25℃〜
−85℃における容量変化率が−80〜+30%を超えない。F characteristic: -25 ° C ~ based on capacitance at 20 ° C
The rate of change in capacity at -85 ° C does not exceed -80 to + 30%.
なお、別表1および別表2中、*印を付したものはこ
の発明の範囲外のものである。In Tables 1 and 2, those marked with * are outside the scope of the present invention.
次に、この発明にかかる組成物の組成範囲を限定した
理由について説明する。Next, the reason why the composition range of the composition according to the present invention is limited will be described.
まず、主成分の組成範囲を限定した理由について説明
する。First, the reason for limiting the composition range of the main component will be described.
Pb〔(Mg1/2W1/2)zTi1-z〕O3(ただし、0≦z≦
1)と表した場合に、zが0.55より小さい場合またはz
が0.70より大きい場合には、鉛複合ペロブスカイト用還
元防止剤を混合した時、誘電率が2500より小さくなり、
かつ温度に対する静電容量の変化率がJIS規格のB特性
(−25℃から+85℃においてΔC/C20=±10%)を満足
しないので好ましくない(試料番号1〜3および10〜12
参照)。Pb [(Mg 1/2 W 1/2 ) zTi 1- z] O 3 (where 0 ≦ z ≦
If z is less than 0.55 or z
When is greater than 0.70, the dielectric constant becomes less than 2500 when mixed with a lead compound perovskite reduction inhibitor.
Moreover, the rate of change of capacitance with respect to temperature does not satisfy JIS standard B characteristics (ΔC / C 20 = ± 10% from -25 ° C to + 85 ° C), which is not preferable (sample numbers 1 to 3 and 10 to 12).
reference).
次に、副成分の組成範囲を限定した理由について説明
する。Next, the reason for limiting the composition range of the subcomponents will be described.
ZnOの添加量が主成分100重量%に対して0.1重量%よ
り少ない場合には、比抵抗が1010Ωcmより小さくなり、
かつ温度に対する静電容量の変化率がJIS規格のB特性
を満足しないので好ましくない(試料番号13参照)。When the added amount of ZnO is less than 0.1% by weight with respect to 100% by weight of the main component, the specific resistance becomes less than 10 10 Ωcm,
Moreover, the rate of change of capacitance with respect to temperature does not satisfy the JIS standard B characteristics, which is not preferable (see sample number 13).
一方、ZnOの添加量が2.0重量%より多い場合には、鉛
複合ペロブスカイト用還元防止剤を混合した時、誘電率
が2500未満になり、かつ温度に対する静電容量の変化率
がJIS規格のB特性を満足しないので好ましくない(試
料番号16参照)。On the other hand, when the amount of ZnO added is more than 2.0% by weight, when the lead composite perovskite reduction inhibitor is mixed, the dielectric constant becomes less than 2500, and the rate of change in capacitance with temperature is JIS standard B It is not preferable because it does not satisfy the characteristics (see sample number 16).
さらに、MnO2の添加量が主成分100重量%に対して1.5
重量%より多い場合には、誘電損失が5%を超え、かつ
温度に対する静電容量の変化率がJIS規格のB特性を満
足しなく、比抵抗が1010Ωcmより小さくなるので好まし
くない(試料番号19参照)。Furthermore, the amount of MnO 2 added is 1.5 based on 100% by weight of the main component.
If it exceeds 5% by weight, the dielectric loss exceeds 5%, the rate of change in capacitance with temperature does not satisfy the JIS standard B characteristics, and the specific resistance is less than 10 10 Ωcm, which is not preferable. See number 19.).
次に、鉛複合ペロブスカイト用還元防止剤の組成範囲
を限定した理由について説明する。Next, the reason for limiting the composition range of the lead-containing composite perovskite reduction inhibitor will be described.
つまり、b(RO)が10モル%未満では、鉛系複合ペロ
ブスカイト誘電体を銅電極使用可能な低酸素分圧(たと
えば1000℃,約10-7atm以下)で焼成することができな
い(試料番号36,37,38,39参照)。That is, when b (RO) is less than 10 mol%, the lead-based composite perovskite dielectric cannot be fired at a low oxygen partial pressure (eg, 1000 ° C., about 10 −7 atm or less) that can be used as a copper electrode (sample number). 36, 37, 38, 39).
また、b(RO)が10モル%未満では、誘電損失が5%
より大きくなり、かつ比抵抗が小さくなるので好ましく
ない(試料番号36,37,38,39参照)。If b (RO) is less than 10 mol%, the dielectric loss is 5%.
It is not preferable because it becomes larger and the specific resistance becomes smaller (see sample numbers 36, 37, 38, 39).
一方、b(RO)が55モル%以上では、焼成温度が1050
℃を超えてしまい銅電極が融解して流れだすためこの発
明の目的を達成することができなくなってしまう(試料
番号28,29,30,31参照)。On the other hand, when b (RO) is 55 mol% or more, the firing temperature is 1050.
The temperature exceeds ℃ and the copper electrode melts and begins to flow, making it impossible to achieve the object of the present invention (see sample numbers 28, 29, 30, 31).
また、a(Li2O)が20モル%以上あるいはc(B2O3)
が40モル%以上の場合には、誘電体特性が著しく損なわ
れたり、焼成が完了する前に軟化変形したりしてしまう
(試料番号44および46参照)。Further, a (Li 2 O) is 20 mol% or more or c (B 2 O 3 )
When the content is 40 mol% or more, the dielectric properties are significantly impaired, or softening deformation occurs before firing is completed (see sample numbers 44 and 46).
最後に、鉛複合ペロブスカイト用還元防止剤の添加量
を0.05重量%以上6重量%以下に限定した理由について
説明する。すなわち、その添加量を0.05重量%未満にし
た場合には、誘電体が還元されて比抵抗が劣化する(試
料番号22および23参照)。一方、その添加量が6重量%
を超える場合には、誘電率が2500より小さくなって好ま
しくない(試料番号51参照)。Lastly, the reason why the addition amount of the lead composite perovskite reduction inhibitor is limited to 0.05% by weight or more and 6% by weight or less will be described. That is, when the amount added is less than 0.05% by weight, the dielectric is reduced and the specific resistance deteriorates (see sample numbers 22 and 23). On the other hand, the amount added is 6% by weight
When it exceeds, the dielectric constant becomes smaller than 2500, which is not preferable (see Sample No. 51).
なお、約10-7atmより高酸素分圧で焼成すれば、銅電
極が酸化してしまうので好ましくない(試料番号21参
照)。It should be noted that firing at a partial pressure of oxygen higher than about 10 −7 atm is not preferable because the copper electrode is oxidized (see Sample No. 21).
別表1および別表2に示す結果から明らかなように、
この発明によれば、誘電率が2500以上と高くJIS規格の
B特性を満足し、かつ比抵抗が1010Ωcm以上であり、最
適焼結温度が900〜1050℃と低く、銅電極が酸化しない
低酸素分圧雰囲気中で焼成できる、誘電体磁器組成物が
得られることがわかる。As is clear from the results shown in Appendix 1 and Appendix 2,
According to the present invention, the dielectric constant is as high as 2500 or more, the B characteristic of JIS standard is satisfied, the specific resistance is 10 10 Ωcm or more, the optimum sintering temperature is as low as 900 to 1050 ° C., and the copper electrode is not oxidized. It can be seen that a dielectric ceramic composition that can be fired in a low oxygen partial pressure atmosphere is obtained.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01G 4/12 358 (72)発明者 坂部 行雄 京都府長岡京市天神2丁目26番10号 株式 会社村田製作所内 (56)参考文献 特開 昭62−287510(JP,A) 特開 昭55−158685(JP,A)─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical display location H01G 4/12 358 (72) Inventor Yukio Sakabe 2 26-10 Tenjin, Nagaokakyo-shi, Kyoto Stock company Murata Manufacturing Co., Ltd. (56) Reference JP 62-287510 (JP, A) JP 55-158685 (JP, A)
Claims (2)
成する個々の化合物の配合比(モル%)が、それぞれ、 Pb(Mg1/2W1/2)O3:55.0〜70.0 PbTiO3 :30.0〜45.0 の範囲にある主成分を100重量%としたとき、副成分と
してZnOを0.1重量%以上2.0重量%以下の範囲内で含有
する誘電体成分に、 一般式aLi2O+b(RO)+cB2O3+(1−a−b−c)Si
O2で表される成分において、 a,b,cの値が、それぞれ、 0≦a<0.2 0.1≦b<0.55 0≦c<0.4 (ただし、ROは、BaO,CaO,SrOおよびMgOの中の1種以
上) の範囲内にある鉛複合ペロブスカイト用還元防止剤を0.
05重量%以上6重量%以下含有する、誘電体磁器組成
物。1. A compounding ratio (mol%) of individual compounds constituting a composition of Pb (Mg 1/2 W 1/2 ) O 3 -PbTiO 3 is Pb (Mg 1/2 W 1 / 2 ) Dielectric component containing ZnO in the range of 0.1 wt% or more and 2.0 wt% or less as an accessory component when the main component in the range of O 3 : 55.0 to 70.0 PbTiO 3 : 30.0 to 45.0 is 100 wt%. And the general formula aLi 2 O + b (RO) + cB 2 O 3 + (1-a-b-c) Si
In the component represented by O 2 , the values of a, b, and c are 0 ≦ a <0.2 0.1 ≦ b <0.55 0 ≦ c <0.4 (where RO is BaO, CaO, SrO, and MgO). One or more) of lead compound perovskites within the range of 0.
A dielectric porcelain composition containing from 05% by weight to 6% by weight.
nをMnO2に換算して1.5重量%以下含有する、特許請求の
範囲第1項記載の誘電体磁器組成物。2. Further, with respect to 100% by weight of the main component, M
The dielectric ceramic composition according to claim 1, which contains 1.5% by weight or less of n converted to MnO 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1044731A JPH0817058B2 (en) | 1989-02-23 | 1989-02-23 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1044731A JPH0817058B2 (en) | 1989-02-23 | 1989-02-23 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02226613A JPH02226613A (en) | 1990-09-10 |
| JPH0817058B2 true JPH0817058B2 (en) | 1996-02-21 |
Family
ID=12699592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1044731A Expired - Fee Related JPH0817058B2 (en) | 1989-02-23 | 1989-02-23 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0817058B2 (en) |
-
1989
- 1989-02-23 JP JP1044731A patent/JPH0817058B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02226613A (en) | 1990-09-10 |
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