JPH0817245B2 - Thin film solar cell - Google Patents
Thin film solar cellInfo
- Publication number
- JPH0817245B2 JPH0817245B2 JP62219848A JP21984887A JPH0817245B2 JP H0817245 B2 JPH0817245 B2 JP H0817245B2 JP 62219848 A JP62219848 A JP 62219848A JP 21984887 A JP21984887 A JP 21984887A JP H0817245 B2 JPH0817245 B2 JP H0817245B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- thin film
- solar cell
- electrode
- unit cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は絶縁性基板上に透明導電薄膜よりなる第一
電極層、光起電力発生部であるアモルファス半導体層，
金属薄膜よりなる第二電極層を積層したユニットセルの
複数個が直列接続される薄膜太陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a first electrode layer formed of a transparent conductive thin film on an insulating substrate, an amorphous semiconductor layer as a photovoltaic generator,
The present invention relates to a thin film solar cell in which a plurality of unit cells in which a second electrode layer made of a metal thin film is laminated are connected in series.
SiH4，GeH4等の原料ガスのグロー放電分解や光CVD法
により形成されるアモルファス半導体膜は気相成長であ
るため、大面積化が容易であり、低コストの太陽電池と
して期待されている。こうした大面積のアモルファス太
陽電池から効率よく電力を取出すためのよく知られた方
法として、第２図に示されるような直列接続形の太陽電
池がある。これは、ガラス基板などからなる透光性絶縁
基板１上に、酸化すずやITO（酸化インジウムすず）な
どの透明導電薄膜からなる第一電極層21,22,23…を短冊
状に形成し、その上に光起電力発生部であるアモルファ
ス半導体層31,32,33…を、次いで金属薄膜からなる第二
の電極層41,42,43…を形成したものである。第一電極層
21,アモルファス半導体層31,第二電極層41の組合せ、第
一電極層22,アモルファス半導体層32,第二電極層42の組
合せ等が各ユニットセルを構成する。そして、一つのユ
ニットセルの第一電極層22,23,24に隣接するユニットセ
ルの第二電極層41,42,43の延長部51,52,53が接触する構
造となるよう両電極層およびアモルファス半導体層のパ
ターンが形成され、各ユニットセルは直列に接続され
る。こうしたパターンの形成には、フォトエッチング
法，レーザスクライビング法，メカニカルスクライビン
グ法などの各種のプロセス技術が用いられる。Amorphous semiconductor films formed by glow discharge decomposition of raw material gases such as SiH 4 and GeH 4 and by photo-CVD method are vapor phase growth, so it is easy to increase the area and is expected as a low-cost solar cell. . As a well-known method for efficiently extracting electric power from such a large-area amorphous solar cell, there is a series-connected solar cell as shown in FIG. In this, a first electrode layer 21, 22, 23, ... Made of a transparent conductive thin film such as tin oxide or ITO (indium tin oxide) is formed in a strip shape on a translucent insulating substrate 1 made of a glass substrate or the like. The amorphous semiconductor layers 31, 32, 33, ... Which are the photovoltaic generators are formed on top, and the second electrode layers 41, 42, 43 .. First electrode layer
21, a combination of the amorphous semiconductor layer 31, the second electrode layer 41, a combination of the first electrode layer 22, the amorphous semiconductor layer 32, the second electrode layer 42, and the like constitute each unit cell. Then, the first electrode layers 22, 23, 24 of one unit cell both electrode layers and the extension portion 51, 52, 53 of the second electrode layer 41, 42, 43 of the unit cell adjacent to both electrode layers so as to contact A pattern of the amorphous semiconductor layer is formed and each unit cell is connected in series. Various process technologies such as a photoetching method, a laser scribing method, and a mechanical scribing method are used for forming such a pattern.
こうした直列接続型の構造を採用する主な理由として
は、次の点が挙げられる。The main reasons for adopting such a series connection type structure are as follows.
（１）外部配線を行うことなしに高い出力電圧が得られ
る。(1) A high output voltage can be obtained without external wiring.
（２）出力電流は直列接続数に反比例するため、比較的
抵抗の高い透明電極層内での電力損失を小さくすること
ができる。(2) Since the output current is inversely proportional to the number of series connections, it is possible to reduce the power loss in the transparent electrode layer having a relatively high resistance.
しかし、透明電極層の代表的なシート抵抗の値は10Ω
／□程度であるのが一般的である。一方、太陽電池の出
力電流密度は10mA/cm2以上であるのが普通であり、この
場合にはユニットセルの幅が1cmを越えると、透明電極
層での電圧降下が太陽電池の出力電圧に比べて無視でき
なくなり、顕著な出力低下を生ずることになる。従っ
て、大きな基板で性能のよい太陽電池を作る場合には、
ユニットセル幅の制約が生じ、その結果ユニットセルの
分割数をあまり小さくすることはできなくなる。この事
は，大面積で出力電圧が低く、電流の大きな直列接続型
太陽電池を作る上で重大な問題となっている。However, the typical sheet resistance of the transparent electrode layer is 10Ω.
It is generally about / □. On the other hand, the output current density of a solar cell is usually 10 mA / cm 2 or more, and in this case, if the width of the unit cell exceeds 1 cm, the voltage drop in the transparent electrode layer causes the output voltage of the solar cell to rise. Compared to this, it cannot be ignored, and a remarkable reduction in output will occur. Therefore, when making a good solar cell with a large substrate,
The unit cell width is limited, and as a result, the number of divisions of the unit cell cannot be made too small. This is a serious problem in making a series-connected solar cell with a large area, low output voltage, and large current.
本発明の目的は、上記の欠点を除きユニットセルの幅
を大きくしても透明電極層での電力損失を小さくするこ
とができる薄膜太陽電池を提供することにある。It is an object of the present invention to provide a thin film solar cell which can reduce the power loss in the transparent electrode layer even if the width of the unit cell is increased, excluding the above-mentioned drawbacks.
上記の目的を達成するために，本発明は透明導電薄膜
よりなる第一電極層，光起電力発生部であるアモルファ
ス半導体層，金属薄膜よりなる第二電極層が積層された
短冊状のユニットセルの複数個が透光性絶縁基板上に長
辺を互いに隣接して配置され、第二電極層の延長部が隣
接ユニットセルの第一電極層の露出した延長部に接触す
ることにより各ユニットセルが直列接続される薄膜太陽
電池において、第二電極層と第一電極層との接触部が隣
接ユニットセル間の間隙部分およびその間隙部分と直角
に各短冊状ユニットセルの長辺方向をほぼ等分して短辺
方向に伸びる部分に設けられたものとする。In order to achieve the above-mentioned object, the present invention is a strip-shaped unit cell in which a first electrode layer made of a transparent conductive thin film, an amorphous semiconductor layer as a photovoltaic generator, and a second electrode layer made of a metal thin film are laminated. Of the plurality of unit cells are arranged on the translucent insulating substrate so that their long sides are adjacent to each other, and the extension of the second electrode layer contacts the exposed extension of the first electrode layer of the adjacent unit cell. In the thin-film solar cells connected in series, the contact portion between the second electrode layer and the first electrode layer is approximately equal to the gap between adjacent unit cells and the long side direction of each strip-shaped unit cell at right angles to the gap. It shall be provided in the part that extends in the short side direction.
各ユニットセルがユニットセル間の間隙部のほかに、
ユニットセルを長辺方向を等分して短辺方向に伸びる部
分で接続されることにより、各ユニットセルの第一電極
層のすべての個所から接続部に至る距離が短くなり、電
力損失を少なくすることができる。In addition to the gap between each unit cell,
By connecting the unit cells at the part that divides the long side direction into equal parts and extends in the short side direction, the distance from all the parts of the first electrode layer of each unit cell to the connection part is shortened, and the power loss is reduced. can do.
以下第１図と共通の部分に同一の符号を付した図面を
引用して本発明の一実施例について説明する。An embodiment of the present invention will be described below with reference to the drawings in which the same parts as those in FIG.
第１図は、本発明に基づく直列接続型太陽電池を透光
性絶縁基板側から透視して見たときの平面図を示す。基
板１上に形成された短冊状の透明な第一電極層21,22,23
には、隣接ユニットセルとの間隙で第二電極層の延長部
52,53,54が接触すると共にそれと直角の枝状集電電極6
2,63,64が接触している。この図の一部を拡大して第二
電極層から見た平面図を第３図に示し、深さ方向の構造
を示すために第４〜６図に第３図Ａ−Ａ′,B−Ｂ′,C−
Ｃ′の各切断線における断面図を示す。第４図からわか
るように、この部分では金属電極62が透明電極21と直接
接触しており、これが枝状集電電極としてはたらき、隣
接するユニットセルの金属電極と一体になっている。枝
状集電電極以外の部分では、第５図に示されるように基
本的には第２図と同様、接触部51,52,53で隣接セルが接
続される直列接続構造となっている。第６図に示すよう
に、金属電極と透明電極が直接接触している枝状集電電
極部62と金属電極41とを電気的に絶縁するため、枝状集
電電極部を取囲むように金属層41のない帯状の領域が形
成されている。通常のアモルファスシリコン太陽電池で
は、この幅を10μｍ以上になるよう選べば、事実上ここ
を流れる漏れ電流は無視でき、絶縁されているとみなす
ことができる。FIG. 1 shows a plan view of a series-connected solar cell according to the present invention seen through from a transparent insulating substrate side. Strip-shaped transparent first electrode layers 21, 22, 23 formed on the substrate 1
Is the extension of the second electrode layer with a gap between adjacent unit cells.
Branch current collector electrode 6 with which 52, 53, and 54 are in contact with and perpendicular to it
2,63,64 are in contact. FIG. 3 is a plan view showing a partially enlarged view of the second electrode layer, and FIGS. 4 to 6 show the structure in the depth direction. B ', C-
Sectional drawing in each cutting line of C'is shown. As can be seen from FIG. 4, in this portion, the metal electrode 62 is in direct contact with the transparent electrode 21, which acts as a branch current collector electrode and is integral with the metal electrode of the adjacent unit cell. As shown in FIG. 5, the portions other than the branch-shaped current collecting electrodes basically have a serial connection structure in which adjacent cells are connected by the contact portions 51, 52, 53 as in FIG. As shown in FIG. 6, in order to electrically insulate the metal electrode 41 from the branch current collecting electrode portion 62 in which the metal electrode and the transparent electrode are in direct contact with each other, the branch current collecting electrode portion should be surrounded. A band-shaped region without the metal layer 41 is formed. In a normal amorphous silicon solar cell, if this width is selected to be 10 μm or more, the leakage current flowing there can be practically neglected and it can be considered that it is insulated.
上記のような構造の太陽電池では、ユニットセルの幅
ｗが広くなっても、枝状集電電極部62,63,64の間隔ｄを
適切に選択すれば透明電極内での電力損失を減少させる
ことができる。シート抵抗が10Ω／□程度の透明電極を
用い、出力電流密度が10mA/cm2程度の代表的なアモルフ
ァスシリコン太陽電池では、この間隔は1cm以下に選べ
ば、ユニットセル幅ｗが数cmになっても、電力損失は無
視できる程度になる。In the solar cell having the above structure, even if the width w of the unit cell becomes wide, the power loss in the transparent electrode can be reduced by appropriately selecting the distance d between the branch-shaped collecting electrode portions 62, 63, 64. Can be made. In a typical amorphous silicon solar cell with a sheet resistance of about 10 Ω / □ and an output current density of about 10 mA / cm 2 , if this distance is selected to be 1 cm or less, the unit cell width w will be several cm. However, the power loss is negligible.
本発明による構造の太陽電池は、通常の直列接続型太
陽電池を作るプロセスとまったく同じ工程で作成するこ
とができる。フォトエッチングやレーザスクライビング
プロセスによりパターニングする場合には、アモルファ
ス半導体層と金属電極層のパターンを一部修正して枝状
集電電極部分で透明電極層を露出させるだけで行うこと
ができ、工程数のそのものの増加はない。また、第７図
に第６図と同様の断面で示すように、金属電極41形成後
にレーザ光７の照射による溶融部あるいはアモルファス
半導体部の結晶化部８により、枝状集電電極62の金属層
と透明電極層21との接続を行うことも可能である。The solar cell having the structure according to the present invention can be manufactured by exactly the same process as that for manufacturing a normal series-connected solar cell. When patterning by photoetching or laser scribing process, it can be performed by only partially modifying the pattern of the amorphous semiconductor layer and the metal electrode layer and exposing the transparent electrode layer at the branch-shaped collector electrode portion. There is no increase in itself. Further, as shown in FIG. 7 in a cross section similar to FIG. 6, after the metal electrode 41 is formed, the metal of the branch-shaped collector electrode 62 is formed by the melted portion by the irradiation of the laser beam 7 or the crystallized portion 8 of the amorphous semiconductor portion. It is also possible to make a connection between the layer and the transparent electrode layer 21.
本発明によれば、隣接ユニットセル相互の接続を、セ
ル間の間隙での第一電極層と第二電極層の接触によるば
かりでなく第二電極層のユニットセル内に突出する枝状
集電電極によって行うために、ユニットセルの幅を大き
くしても透明導電膜よりなる第一電極内での電力損失を
小さく抑えることができ、その結果低電圧大電流形の大
面積直列型薄膜太陽電池を低コストで生産することが可
能となる。According to the present invention, the connection between the adjacent unit cells is achieved not only by the contact between the first electrode layer and the second electrode layer in the gap between the cells but also by the branch current collector projecting into the unit cell of the second electrode layer. Since the electrodes are used, even if the width of the unit cell is increased, the power loss in the first electrode made of the transparent conductive film can be suppressed to be small, and as a result, the low voltage high current type large area series thin film solar cell is provided. Can be produced at low cost.
第１図は本発明の一実施例の基板側から見た平面透視
図、第２図は従来の直列接続型太陽電池の斜視図、第３
図は第１図の一部を拡大して第二電極側から見た平面
図、第４図，第５図，第６図はそれぞれ第３図のＡ−
Ａ′線,B−Ｂ′線,C−Ｃ′線断面図、第７図は本発明の
別の実施例の第６図に対応する断面図である。 1:透光性絶縁基板、21,22,23:第一電極層、31,32,33:ア
モルファス半導体層、41,42,43:第二電極層、51,52,53:
接触部、62,63,64:枝状集電電極。FIG. 1 is a perspective plan view of the embodiment of the present invention viewed from the substrate side, FIG. 2 is a perspective view of a conventional series-connected solar cell, and FIG.
The figure is an enlarged plan view of a part of FIG. 1 seen from the second electrode side, and FIGS. 4, 5, and 6 are A- of FIG. 3, respectively.
FIG. 7 is a sectional view corresponding to FIG. 6 of another embodiment of the present invention, which is a sectional view taken along the line A ', the line BB', and the line CC '. 1: translucent insulating substrate, 21, 22, 23: first electrode layer, 31, 32, 33: amorphous semiconductor layer, 41, 42, 43: second electrode layer, 51, 52, 53:
Contact part, 62, 63, 64: Branched collector electrodes.
Claims (1)
力発生部であるアモルファス半導体層，金属薄膜よりな
る第二電極層が積層された短冊状のユニットセルの複数
個が透光性絶縁基板上に長辺を互いに隣接して配置さ
れ、第二電極層の延長部が隣接ユニットセルの第一電極
層の露出した延長部に接触することにより各ユニットセ
ルが直列接続されるものにおいて、第二電極層と第一電
極層との接触部が隣接ユニットセル間の間隙部分および
該間隙部分と直角に各短冊状ユニットセルの長辺方向を
等分して短辺方向に伸びる部分に設けられたことを特徴
とする薄膜太陽電池。1. A plurality of strip-shaped unit cells in which a first electrode layer formed of a transparent conductive thin film, an amorphous semiconductor layer serving as a photovoltaic generator, and a second electrode layer formed of a metal thin film are laminated, and a plurality of strip-shaped unit cells are transparent. In which the unit cells are connected in series by arranging the long sides adjacent to each other on the insulating substrate, and the extension portions of the second electrode layers contact the exposed extension portions of the first electrode layers of the adjacent unit cells. , The contact portion between the second electrode layer and the first electrode layer is formed in a gap portion between adjacent unit cells and a portion extending in the short side direction by equally dividing the long side direction of each strip-shaped unit cell at right angles to the gap portion. A thin film solar cell characterized by being provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62219848A JPH0817245B2 (en) | 1987-09-02 | 1987-09-02 | Thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62219848A JPH0817245B2 (en) | 1987-09-02 | 1987-09-02 | Thin film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6461962A JPS6461962A (en) | 1989-03-08 |
| JPH0817245B2 true JPH0817245B2 (en) | 1996-02-21 |
Family
ID=16742009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62219848A Expired - Lifetime JPH0817245B2 (en) | 1987-09-02 | 1987-09-02 | Thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0817245B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101368904B1 (en) * | 2007-12-31 | 2014-02-28 | 주성엔지니어링(주) | Thin film type Solar Cell, and Method for manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119586A (en) * | 1986-11-07 | 1988-05-24 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
-
1987
- 1987-09-02 JP JP62219848A patent/JPH0817245B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101368904B1 (en) * | 2007-12-31 | 2014-02-28 | 주성엔지니어링(주) | Thin film type Solar Cell, and Method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6461962A (en) | 1989-03-08 |
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