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JPH0818255B2 - Ultra-thin blade grindstone - Google Patents
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JPH0818255B2 - Ultra-thin blade grindstone - Google Patents

Ultra-thin blade grindstone

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Publication number
JPH0818255B2
JPH0818255B2 JP62082056A JP8205687A JPH0818255B2 JP H0818255 B2 JPH0818255 B2 JP H0818255B2 JP 62082056 A JP62082056 A JP 62082056A JP 8205687 A JP8205687 A JP 8205687A JP H0818255 B2 JPH0818255 B2 JP H0818255B2
Authority
JP
Japan
Prior art keywords
grindstone
plating
ultra
plating phase
amorphous alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62082056A
Other languages
Japanese (ja)
Other versions
JPS63251171A (en
Inventor
務 高橋
信夫 須田
武志 片山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP62082056A priority Critical patent/JPH0818255B2/en
Publication of JPS63251171A publication Critical patent/JPS63251171A/en
Publication of JPH0818255B2 publication Critical patent/JPH0818255B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 「産業上の利用分野」 本発明は、半導体素子等の超精密加工に使用される極
薄刃砥石に関する。
TECHNICAL FIELD The present invention relates to an ultrathin blade grindstone used for ultraprecision machining of semiconductor elements and the like.

「従来の技術」 第3図は、この種の極薄刃砥石の一例を示すものであ
る。
"Prior Art" Fig. 3 shows an example of an ultra-thin blade grindstone of this type.

この極薄刃砥石(電鋳薄刃砥石)1は、NiやCoあるい
はこれらの合金からなる金属めっき相中に、ダイヤモン
ドやCBN等の超砥粒を分散して形成された厚さ15μm〜
数百μmの輪環薄板状のものであり、特に、ウエハから
チップを切り出す切断分割(シリコンダイシング)用と
しては、厚さ50μm以下の極薄のものが利用されてい
る。
This ultrathin blade grindstone (electroformed thin blade grindstone) 1 has a thickness of 15 μm formed by dispersing superabrasive grains such as diamond and CBN in a metal plating phase made of Ni, Co or their alloys.
It is a ring-shaped thin plate with a thickness of several hundred μm, and particularly for cutting and dividing (silicon dicing) for cutting chips from a wafer, an extremely thin one with a thickness of 50 μm or less is used.

そして、この砥石1は、両側面を一対の取付用フラン
ジ2,2間によって挾まれたうえ、砥石軸4にナット3で
固定され、使用に供される。
The grindstone 1 is sandwiched between the pair of mounting flanges 2 and 2 on both side surfaces and fixed to the grindstone shaft 4 with the nut 3 for use.

「発明が解決しようとする問題点」 ところで、上記のような極薄刃砥石においては、超LS
IやCCD(電荷結合素子)の切断分割に用いられた場合、
集積度の低いICの切断分割の場合に比べて砥石寿命が著
しく短くなり、使用に堪えないという問題があった。
"Problems to be solved by the invention" By the way, in the above-mentioned ultra-thin blade grindstone, ultra LS
When used for cutting and dividing I and CCD (charge coupled device),
There was a problem that the life of the grindstone was remarkably shortened compared to the case of cutting and dividing IC with low integration, and it could not be used.

被削材が同じシリコンであるにもかかわらず、このよ
うな顕著な寿命差が生じる理由を調べたところ、切断時
に使用される研削液が原因であることがわかった。通常
のICの切断には研削液として超純水が使用されるのに対
し、超LSIやCCDの切断の場合には、超純水に炭酸ガスを
溶解してPH4程度にした研削液が用いられている。この
ため、研削液による腐食と被削材の摩擦との相互作用、
すなわち擦過腐食により、砥石の金属めっき相を構成す
るNiが比較的大きな速度で摩耗し、砥石寿命が著しく短
くなってしまうのである。(なお、前記のように超LSI
やCCDの切断に酸性の研削液を使うのは、研削液の電気
伝導度を高めて、砥石とウエハとの摩擦帯電による放電
現象を防止するためである。IC程度の集積度では、この
種の放電が生じでも素子が破壊されることはないが、超
LSIやCCDのように高集積度化すると、微弱な放電によっ
ても素子パターンの破壊が生じる。) そこで、本発明者らは、前記擦過腐食の問題を詳細に
研究し、以下のような知見を得るに至った。
When the reason why such a noticeable difference in life occurs even when the work material is the same silicon, it was found that the cause was the grinding fluid used during cutting. Ultra-pure water is used as the grinding fluid for normal IC cutting, whereas in the case of VLSI and CCD cutting, carbon dioxide is dissolved in ultra-pure water to a PH4 level. Has been. Therefore, the interaction between the corrosion of the grinding fluid and the friction of the work material,
That is, Ni that constitutes the metal plating phase of the grindstone is abraded at a relatively large speed due to fretting corrosion, and the life of the grindstone is significantly shortened. (Note that VLSI as described above
The reason why an acidic grinding fluid is used for cutting CCDs and CCDs is to increase the electric conductivity of the grinding fluid and prevent a discharge phenomenon due to frictional electrification between the grindstone and the wafer. With the degree of integration of an IC, even if this kind of discharge occurs, the element will not be destroyed.
When the degree of integration is increased as in LSI and CCD, the element pattern is destroyed even by a weak discharge. Therefore, the present inventors have studied the above-mentioned problem of fretting corrosion in detail and have obtained the following findings.

砥石の金属めっき相を非晶質合金(非晶質状合金を含
む)によって構成することにより、めっき相の耐食性を
向上し、擦過腐食が防止できる。
By configuring the metal plating phase of the grindstone with an amorphous alloy (including an amorphous alloy), the corrosion resistance of the plating phase can be improved and fretting corrosion can be prevented.

特に、非晶質合金としてNi基合金,Co基合金,あるい
はNi−Co基合金のいずれかを使用した場合に、の効果
が顕著となる。
In particular, the effect becomes remarkable when any of Ni-based alloy, Co-based alloy, and Ni-Co-based alloy is used as the amorphous alloy.

前記非晶質合金にP,B,Mo,W,Re等の元素を一種以上添
加すると、めっき相の自己不動態化作用が促進され、表
面に再生力の強い不動態皮膜が形成されるので、耐食性
を一段と向上することができる。
When one or more elements such as P, B, Mo, W, Re are added to the amorphous alloy, the self-passivation action of the plating phase is promoted and a passivation film having a strong regenerative power is formed on the surface. The corrosion resistance can be further improved.

「問題点を解決する手段」 本発明は上記知見に基づいてなされたもので、砥石の
金属めっき相を非晶質合金で構成したことを特徴とす
る。
"Means for Solving Problems" The present invention has been made based on the above findings, and is characterized in that the metal plating phase of the grindstone is composed of an amorphous alloy.

なお、前記非晶質合金は、Ni基,Co基またはNi−Co基
のいずれかであることが望ましい。
The amorphous alloy is preferably Ni-based, Co-based or Ni-Co-based.

また、前記非晶質合金は、P,B,Mo,W,Reから選ばれる
一種以上の元素を含有していてもよく、その場合の含有
量は1〜30wt%であることが望ましい。1wt%未満であ
ると前記の自己不動態化作用が不十分となり、30wt%よ
り大きいとめっき相の強度が低下する。
Further, the amorphous alloy may contain one or more elements selected from P, B, Mo, W and Re, and in that case, the content is preferably 1 to 30 wt%. If it is less than 1 wt%, the above-mentioned self-passivation action becomes insufficient, and if it is more than 30 wt%, the strength of the plating phase decreases.

「実施例」 次に、実施例を挙げて本発明の効果を実証する。"Examples" Next, the effects of the present invention will be demonstrated with reference to Examples.

まず、第1図を用いて砥石の製造装置の概略を説明す
ると、符号10は攪拌機が配設されためっき槽であり、こ
のめっき槽10内には非導電性の台座11が水平に配置され
ている。また、この台座11上にはステンレス製の平面基
板12が載置され、この平面基板12の上面に製造すべき砥
石の原型形状をなす部分を残してマスキングが施されて
いる。さらに、平面基板12の上方には、これと平行に陽
極板13が配置されている。
First, the outline of the grindstone manufacturing apparatus will be described with reference to FIG. 1. Reference numeral 10 is a plating tank in which a stirrer is arranged. In the plating tank 10, a non-conductive pedestal 11 is horizontally arranged. ing. A flat substrate 12 made of stainless steel is placed on the pedestal 11, and masking is performed on the upper surface of the flat substrate 12 while leaving a portion of the prototype shape of the grindstone to be manufactured. Further, an anode plate 13 is arranged above the plane substrate 12 in parallel therewith.

この装置により、電解めっきを行なう場合には、前記
平面基板12を電源の陰極に、陽極板13を電源の陽極に接
続し、めっき液Mを攪拌しながら通電する。そして、平
面基板12上に所定の厚さの砥粒層14を析出させた後、こ
れを平面基板12から剥離させ、洗浄および整形を経て円
環状の砥石を得る。また、無電解めっきを行なう場合
は、通電の必要がないため前記陽極板13を取り外してお
き、他は上記と同様の操作で砥石を作成する。なお、以
下7種の砥石のうち、実施例1〜6は全て金属めっき相
が非晶質合金、比較例は結晶質金属となっている。ま
た、砥石の形状は全て、外径50.2mmφ、内径40.0mmφ、
厚さ15μm、ダイヤモンド砥粒径5μmに統一した。
When electrolytic plating is performed by this apparatus, the flat substrate 12 is connected to the cathode of the power source and the anode plate 13 is connected to the anode of the power source, and the plating solution M is energized while being stirred. Then, after the abrasive grain layer 14 having a predetermined thickness is deposited on the flat substrate 12, the abrasive grain layer 14 is separated from the flat substrate 12 and washed and shaped to obtain an annular grindstone. Further, when electroless plating is performed, it is not necessary to energize, so the anode plate 13 is removed, and otherwise a grindstone is prepared by the same operation as described above. In the following 7 kinds of grindstones, Examples 1 to 6 all have an amorphous metal plating phase, and Comparative Example has a crystalline metal. In addition, all the shapes of the grindstone, outer diameter 50.2mmφ, inner diameter 40.0mmφ,
The thickness was 15 μm and the diamond abrasive grain size was 5 μm.

(実施例1) 電解めっき液組成(砥粒は省略、以下同様) NiSO4・6H2O:150g/ NiCl2・6H2O:45g/ NiCO3:30g/ H3PO4:50g/ H3PO3:40g/ PH1 電解めっき条件 液温:70℃ 陰極電流密度:5A/dm2 砥石の組成 金属めっき相 P:10wt%、残部Ni 砥粒含有量:31vol% (実施例2) 無電解めっき液組成 NiCl2・6H2O:30g/ エチレンジアミン:60g/ NaOH:40g/ NaF:3g/ NaBH4:0.5g/ PbCl2:0.06g/ 無電解めっき条件 液温:50℃ 砥石の組成 めっき相 B:7wt%、残部Ni 砥粒含有量:38vol% (実施例3) 無電解めっき液組成 NiSO4:0.03mol/ Na2WO4:0.1mol/ NaH2PO2:0.1mol/ クエン酸Na:0.1mol/ PH8 無電解めっき条件 液温:90℃ 砥石の組成 めっき相 W:10wt%、P:6wt%、残部Ni 砥粒含有量:35vol% (実施例4) 無電解めっき液組成 CoSO4:0.05mol/ NaH2PO2:0.2mol/ クエン酸Na:0.2mol/ (NH42SO4:0.5mol/ PH9 無電解めっき条件 液温:90℃ 砥石の組成 めっき相 P:4.5wt%、残部Co 砥粒含有量:37vol% (実施例5) 電解めっき液組成 モリブデン酸:0.05mol/ NiSO4:0.22mol/ 酒石酸Na:0.27mol/ PH10.5 電解めっき条件 液温:30℃ 陰極電流密度:10A/dm2 砥石の組成 めっき相組成 Mo:20wt%、残部Ni 砥粒含有量:27vol% (実施例6) 電解めっき液組成 過レニウム酸Na:0.025mol/ NiSO4:0.1mol/ クエン酸Na:0.17mol/ PH8.0 電解めっき条件 液温:50℃ 陰極電流密度:3A/dm2 砥石の組成 めっき相 Re:22wt%、残部Ni 砥粒含有量:29vol% (比較例) 電解めっき液組成 NiSO4:250g/ NiCl2:30g/ H3BO3:30g/ 光沢剤少量 PH4.0 電解めっき条件 液温:50℃ 陰極電流密度:3A/dm2 砥石の組成 めっき相 結晶質Ni 砥粒含有量:32vol% 次に、以上7種の極薄刃砥石を用い、以下の条件でウ
エハ切断試験を行なった。
(Example 1) electroplating solution composition (abrasive omitted, hereinafter the same) NiSO 4 · 6H 2 O: 150g / NiCl 2 · 6H 2 O: 45g / NiCO 3: 30g / H 3 PO 4: 50g / H 3 PO 3 : 40g / PH1 Electrolytic plating conditions Liquid temperature: 70 ℃ Cathode current density: 5A / dm 2 Grinding wheel composition Metal plating phase P: 10wt%, Ni content in balance Ni: 31vol% (Example 2) Electroless plating Liquid composition NiCl 2・ 6H 2 O: 30g / Ethylenediamine: 60g / NaOH: 40g / NaF: 3g / NaBH 4 : 0.5g / PbCl 2 : 0.06g / Electroless plating conditions Liquid temperature: 50 ℃ Grindstone composition Plating phase B : 7 wt%, the balance Ni abrasive content: 38 vol% (example 3) electroless plating solution composition NiSO 4: 0.03mol / Na 2 WO 4: 0.1mol / NaH 2 PO 2: 0.1mol / citric acid Na: 0.1 mol / PH8 Electroless plating conditions Liquid temperature: 90 ° C Grinding wheel composition Plating phase W: 10wt%, P: 6wt%, balance Ni abrasive grain content: 35vol% (Example 4) Electroless plating solution composition CoSO 4 : 0.05 mol / NaH 2 PO 2 : 0.2mol / citrate Na: 0.2mol / (NH 4 ) 2 SO 4 : 0.5mol / PH9 electroless plating conditions Liquid temperature: 90 ℃ Grinding stone composition Plating phase P: 4.5 wt%, balance Co abrasive grain content: 37 vol% (Example 5) Electrolytic plating solution composition Molybdic acid: 0.05 mol / NiSO 4 : 0.22 mol / Na tartrate: 0.27 mol / PH 10.5 Electrolytic plating conditions Liquid temperature: 30 ° C. Cathode current density: 10 A / dm 2 Grinding stone composition Plating phase composition Mo: 20 wt%, balance Ni abrasive grain content: 27 vol% (Example 6) Electrolytic plating composition Na perrhenate: 0.025mol / NiSO 4 : 0.1mol / Na citrate: 0.17mol / PH8.0 Electroplating conditions Liquid temperature: 50 ℃ Cathode current density: 3A / dm 2 Grinding wheel composition Plating phase Re: 22wt%, balance Ni abrasive grains included Amount: 29vol% (Comparative example) Electrolytic plating composition NiSO 4 : 250g / NiCl 2 : 30g / H 3 BO 3 : 30g / Small amount of brightener PH4.0 Electroplating conditions Liquid temperature: 50 ℃ Cathode current density: 3A / dm 2 Composition of Grinding Wheel Plating Phase Crystalline Ni Abrasive Grain Content: 32 vol% Next, a wafer cutting test was performed under the following conditions using the above 7 kinds of ultra-thin blade grindstones.

回転数:30,000rpm 送り速度100mm/sec. 切り込み量:100μm 突き出し量:200μm 被削剤:5インチφシリコンウエハ 研削液:炭酸ガス溶解イオン交換水(PH4) 切断距離:10,000本 その結果を次表に示す。Rotational speed: 30,000 rpm Feed rate 100 mm / sec. Depth of cut: 100 μm Depth: 200 μm Work material: 5 inch φ Silicon wafer Grinding fluid: Carbon dioxide dissolved ion exchange water (PH4) Cutting distance: 10,000 The results are shown in the table below Shown in.

上表のように、実施例1〜6の砥石では、比較例の砥
石に比して擦過腐食を格段に低減することができた。
As shown in the above table, the grindstones of Examples 1 to 6 were able to significantly reduce the fretting corrosion as compared with the grindstone of the comparative example.

なお、以上の実施例では、Ni基あるいはCo基の合金に
より非晶質めっき相を構成したが、本発明はこれらに限
られるものではなく、Ni−Co基合金、あるいは他の金属
を主成分とする合金であってもよい。
In the above examples, the Ni-based or Co-based alloy constitutes the amorphous plating phase, but the present invention is not limited to these, and Ni-Co-based alloy, or other metal as the main component. The alloy may be

また、上記各実施例では、めっき相を非晶質にする目
的と、めっき相の自己不動態化作用を促進する目的とを
同時に満たすためにP,B,Mo,W,Reのいずれかの化合物を
めっき液に添加して非晶質めっき相を形成したが、これ
ら以外の元素を添加することによって非晶質合金を得る
ことも可能である。
Further, in each of the above examples, in order to simultaneously satisfy the purpose of making the plating phase amorphous, and the purpose of promoting the self-passivation action of the plating phase, one of P, B, Mo, W, and Re. Although the compound was added to the plating solution to form an amorphous plating phase, it is possible to obtain an amorphous alloy by adding an element other than these.

また、本発明の極薄刃砥石は、前記のような円板型の
みに限らず、第2図のようにアルミ製等のハブ20と砥粒
層21とが一体に形成された形状であってもよい。
Further, the ultra-thin blade grindstone of the present invention is not limited to the disk type as described above, and has a shape in which the hub 20 and the abrasive grain layer 21 made of aluminum or the like are integrally formed as shown in FIG. Good.

「発明の効果」 以上説明した通り、本発明の極薄刃砥石は金属めっき
相を非晶質合金で構成したものなので、めっき相が結晶
質である従来の砥石に比べて格段に耐食性が高く、炭酸
ガスを溶解させた酸性の研削液を使用した場合にも、擦
過腐食を防いで長寿命を得ることができる。
"Effects of the Invention" As described above, the ultra-thin blade grindstone of the present invention has a metal plating phase composed of an amorphous alloy, and therefore has significantly higher corrosion resistance than a conventional grindstone in which the plating phase is crystalline, Even when an acidic grinding fluid in which carbon dioxide gas is dissolved is used, abrasion can be prevented and a long life can be obtained.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の実施例の極薄刃砥石を製造する際に使
用しためっき装置の断面図、第2図は他の実施例の砥石
を示す断面図、第3図は従来の極薄刃砥石の一例を示す
断面図である。 10……めっき槽、14……砥粒層、 20……アルミハブ、21……砥粒層。
FIG. 1 is a sectional view of a plating apparatus used for manufacturing an ultrathin blade grindstone of an embodiment of the present invention, FIG. 2 is a sectional view showing a grindstone of another embodiment, and FIG. 3 is a conventional ultrathin blade grindstone. It is sectional drawing which shows an example. 10 …… plating tank, 14 …… abrasive grain layer, 20 …… aluminum hub, 21 …… abrasive grain layer.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】金属めっき相中に超砥粒が分散されてなる
砥粒層を有する極薄刃砥石において、 前記金属めっき相は非晶質合金からなることを特徴とす
る極薄刃砥石。
1. An ultrathin blade grindstone having an abrasive grain layer in which superabrasive grains are dispersed in a metal plating phase, wherein the metal plating phase is made of an amorphous alloy.
【請求項2】前記非晶質合金は、Ni基、Co基またはNi−
Co基のいずれかであることを特徴とする特許請求の範囲
第1項記載の極薄刃砥石。
2. The amorphous alloy is Ni-based, Co-based or Ni-
The ultrathin blade grindstone according to claim 1, which is one of Co bases.
【請求項3】前記非晶質合金は、P,B,Mo,W,Reから選ば
れる一種以上の元素を含有することを特徴とする特許請
求の範囲第1項または第2項記載の極薄刃砥石。
3. The pole according to claim 1 or 2, wherein the amorphous alloy contains one or more elements selected from P, B, Mo, W and Re. Thin blade whetstone.
JP62082056A 1987-04-02 1987-04-02 Ultra-thin blade grindstone Expired - Lifetime JPH0818255B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62082056A JPH0818255B2 (en) 1987-04-02 1987-04-02 Ultra-thin blade grindstone

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62082056A JPH0818255B2 (en) 1987-04-02 1987-04-02 Ultra-thin blade grindstone

Publications (2)

Publication Number Publication Date
JPS63251171A JPS63251171A (en) 1988-10-18
JPH0818255B2 true JPH0818255B2 (en) 1996-02-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP62082056A Expired - Lifetime JPH0818255B2 (en) 1987-04-02 1987-04-02 Ultra-thin blade grindstone

Country Status (1)

Country Link
JP (1) JPH0818255B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785376B2 (en) * 1989-09-12 1998-08-13 三菱マテリアル株式会社 Ultra-thin blade and its manufacturing method
JPH04223874A (en) * 1990-12-26 1992-08-13 Mitsubishi Materials Corp Grindstone for grinding lens
JPH04223875A (en) * 1990-12-26 1992-08-13 Mitsubishi Materials Corp Grindstone for grinding lens
JP5150931B2 (en) * 2008-02-05 2013-02-27 三菱マテリアル株式会社 Thin blade and method for manufacturing the same
JP5853946B2 (en) * 2012-01-06 2016-02-09 信越化学工業株式会社 Manufacturing method of outer peripheral cutting blade
JP2022094578A (en) * 2020-12-15 2022-06-27 株式会社ディスコ Electroformed grindstone

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JPS5860696A (en) * 1981-10-06 1983-04-11 Rikagaku Kenkyusho Conductive diamond and its manufacturing method
JPS6080562A (en) * 1983-10-07 1985-05-08 Disco Abrasive Sys Ltd Electroplated whetstone
JPS6374273U (en) * 1986-11-01 1988-05-18

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JPS63251171A (en) 1988-10-18

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