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JPH0818909B2 - Oxide superconductor single crystal growth method - Google Patents
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JPH0818909B2 - Oxide superconductor single crystal growth method - Google Patents

Oxide superconductor single crystal growth method

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Publication number
JPH0818909B2
JPH0818909B2 JP6528887A JP6528887A JPH0818909B2 JP H0818909 B2 JPH0818909 B2 JP H0818909B2 JP 6528887 A JP6528887 A JP 6528887A JP 6528887 A JP6528887 A JP 6528887A JP H0818909 B2 JPH0818909 B2 JP H0818909B2
Authority
JP
Japan
Prior art keywords
cuo
single crystal
oxide superconductor
crystal growth
growth method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP6528887A
Other languages
Japanese (ja)
Other versions
JPS63230594A (en
Inventor
義和 日高
敏明 村上
陽一 榎本
実 鈴木
研 小田
和幸 森脇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6528887A priority Critical patent/JPH0818909B2/en
Publication of JPS63230594A publication Critical patent/JPS63230594A/en
Publication of JPH0818909B2 publication Critical patent/JPH0818909B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はジョセフソン接合を利用した光検出器等に用
いうる酸化物超伝導体を育成する方法に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a method for growing an oxide superconductor that can be used in a photodetector or the like using a Josephson junction.

〔従来の技術〕[Conventional technology]

La2CuO4は半導体であるが、Laの一部をCa,Sr,Ba等で
置換すると金属伝導に変わることがMichelらによって報
告されている(Michel,C.,Raveau,B.;Chem.Min.21,407
(1984))。さらに最近Bednorzらによりこの材料が高T
C(M=Baのときx=0.075で30K、Srでx=0.1で40K以
上)の超伝導材料であることが示された。現在このTcの
更新が進められている。
La 2 CuO 4 is a semiconductor, but it has been reported by Michel et al. That a part of La is replaced with Ca, Sr, Ba, etc. to change to metal conduction (Michel, C., Raveau, B .; Chem. Min. 21,407
(1984)). More recently, Bednorz et al.
It was shown that it is a superconducting material of C (x = 0.075 at M = Ba, 30K, Sr at x = 0.1, 40K or more). This Tc is currently being updated.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

このような高Tc材料は現在までセラミックの試料で行
われてきたが、物質の正確な物理特性を知るには単結晶
が必要である。特に、この物質は第1図のようにCuO6
八面体が2次元的に並んだ層とNaCl型の(La1-xMx2O3
(M=Ca,Sr,Ba)の層が交互に並んだ構造をもつため電
気的特性がCuO6の八面体層に平行な方向とそれに垂直な
方向で大きな異方性をもつが、セラミックの試料では各
方向が平均化された特性しか得られない。また、多結晶
粒界にジョセフソン接合が形成されるが、粒径等により
特性が決定されてしまい制御性にとぼしかった。
Until now, such high Tc materials have been used in ceramic samples, but single crystals are necessary to know the exact physical properties of materials. In particular, this material has a layer of CuO 6 octahedra arranged two-dimensionally as shown in Fig. 1 and a NaCl-type (La 1-x M x ) 2 O 3
Due to the structure in which (M = Ca, Sr, Ba) layers are alternately arranged, the electrical characteristics have a large anisotropy in the direction parallel to the CuO 6 octahedron layer and in the direction perpendicular thereto, but In the sample, only the characteristics obtained by averaging each direction are obtained. In addition, a Josephson junction was formed at the polycrystalline grain boundary, but the characteristics were determined by the grain size, etc., and controllability was poor.

〔問題点を解決するための手段〕 高温超伝導体(La1-xMx2Cu1-yNiyO4(M=Ca,Sr,B
a,x=0〜1,y=0〜0.05)」を酸化物超伝導体(La1-xM
x2CuO4、(M=Ca,Sr,Ba,0<x<1)の単結晶を析出
法により育成するものである。
[Means for Solving Problems] High-Temperature Superconductor (La 1-x M x ) 2 Cu 1-y Ni y O 4 (M = Ca, Sr, B
a, x = 0-1, y = 0-0.05) "is an oxide superconductor (La 1-x M
x ) 2 CuO 4 and (M = Ca, Sr, Ba, 0 <x <1) single crystal is grown by a precipitation method.

溶媒としてはCuO又はKFを用いる。このうちCuOは1024
℃以上になると融解する物質である。(La1-xMx)CuO4
をCuOに加え加熱して行くと、M,xによって決まるCuOへ
の溶解度と(La1-xMx)CuO4の含有量で決まる一定温度
に達したとき全体が溶解する。実際にはこの温度より数
10℃だけ高温まで加熱して微結晶が充分消失するまで完
全に溶解させておく。
CuO or KF is used as the solvent. Of these, CuO is 1024
It is a substance that melts at temperatures above ℃. (La 1-x M x ) CuO 4
When Cu is added to CuO and heated, the whole is melted when a certain temperature determined by the solubility in CuO determined by M, x and the content of (La 1-x M x ) CuO 4 is reached. Actually a few more than this temperature
Heat to a high temperature of 10 ℃ and dissolve completely until the fine crystals disappear.

全体を完全に溶融させた後、今度はゆっくり徐冷して
行けば組成によって溶解度が決まっているから、飽和溶
解度に達した温度(仕込書にも依存する)以下になると
結晶が析出し始める。KFは858℃で溶解する物質であ
り、KFを溶媒として用いた場合も同様の手順で単結晶を
析出させることができる。
After the entire material is completely melted, if it is slowly cooled this time, the solubility will be determined by the composition, so crystals will start to precipitate when the temperature reaches the saturated solubility (depending on the packing material) or lower. KF is a substance that dissolves at 858 ° C., and even when KF is used as a solvent, a single crystal can be deposited by the same procedure.

〔実施例〕〔Example〕

〔実施例1〕 La2O3,SrCO3,CuOの粉末により前以って(La0.9S
r0.12CuO4を合成しておく。CuO 60gに対し(La0.9Sr
0.12CuO4を100g(20mol%)を白金るつぼ(50cmφ×5
0cm)に入れ、電気炉中で1300℃まで加熱すると全体が
溶融する。この状態に数時間保持する。その後溶液の上
部は底部より数℃低温にし、同程度の温度差を保ちなが
ら3.3℃/hrの割で徐冷した。
[Example 1] La 2 O 3 , SrCO 3 , and CuO powder were previously used (La 0.9 S
r 0.1 ) 2 CuO 4 is synthesized. CuO 60g (La 0.9 Sr
0.1 ) 2 CuO 4 100g (20mol%) in a platinum crucible (50cmφ × 5
(0 cm) and heated to 1300 ℃ in an electric furnace, the whole melts. Hold in this state for several hours. After that, the upper part of the solution was cooled to a few degrees Celsius lower than the bottom, and was gradually cooled at 3.3 ° C / hr while maintaining the same temperature difference.

1140℃附近になると厚さ1mm前後、1辺5〜10mmの正
方形の板状の結晶が析出する。結晶は比重がCuOより小
さいので表面に数個浮んで現れるが、これらを白金の網
を使ってすくい上げることができる。
Around 1140 ° C, a square plate-like crystal with a thickness of around 1 mm and a side of 5 to 10 mm precipitates. The crystals have a specific gravity smaller than that of CuO, so a few crystals appear floating on the surface, but they can be scooped up using a platinum net.

結晶の一部を粉末状につぶしX線回析を測定したのが
第2図である。蛍光X線による組成分析では結晶中のSr
の含有量は原料の組成の半分で(La0.95Sr0.052CuO4
に近い組成をもっていた。第3図3はこの結晶のCuO6
平行な方向の電気抵抗を示している。110Kから抵抗が緩
やかに減少し、7Kから急激に下る。4Kで完全に抵抗0に
なる。
A part of the crystal was crushed into a powder and the X-ray diffraction was measured, as shown in FIG. Composition analysis by fluorescent X-ray shows that Sr in crystals
Content is half of the composition of the raw material (La 0.95 Sr 0.05 ) 2 CuO 4
Had a composition close to. FIG. 3 shows the electric resistance of this crystal in the direction parallel to CuO 6 . The resistance gradually decreases from 110K and drops sharply from 7K. The resistance becomes completely zero at 4K.

〔実施例2〕 (La0.8Sr0.22CuO4を合成してこれを原料とする。C
uO中にこの原料を実施例1と同じく20mol%加え、同じ
容量の白金るつぼ中で加熱すると1350℃で全体が溶解す
る。3.3℃/hrで徐冷すると1180℃附近で実施例1とほぼ
同じ大きさの単結晶が得られた。
Example 2 (La 0.8 Sr 0.2 ) 2 CuO 4 was synthesized and used as a raw material. C
When 20 mol% of this raw material was added to uO and heated in a platinum crucible of the same volume as in Example 1, the whole melted at 1350 ° C. When gradually cooled at 3.3 ° C./hr, a single crystal having a size almost the same as in Example 1 was obtained at around 1180 ° C.

結晶の組成は(La0.9Sr0.12CuO4に近く、Tcは第3
図4のように40Kであった。
The composition of the crystal is close to (La 0.9 Sr 0.1 ) 2 CuO 4 and Tc is the third
It was 40K as shown in FIG.

〔実施例3〕 (La0.8Ba0.22CuO4を原料とし、CuOに対し20mol%
加えた場合は(La0.95Ba0.052CuO4の組成の結晶が得
られ、Tcは30Kであった。
[Example 3] (La 0.8 Ba 0.2 ) 2 CuO 4 was used as a raw material, and was 20 mol% with respect to CuO.
If added to obtain crystals of the composition of (La 0.95 Ba 0.05) 2 CuO 4, Tc was 30K.

M=Sr,Baにおいてx=0<x<1について上記の方
法で容易に厚さ1mm程度で1辺数mmの単結晶が得られ
る。
In the case of M = Sr, Ba, for x = 0 <x <1, a single crystal having a thickness of about 1 mm and a side of several mm can be easily obtained by the above method.

また、MがCaの場合も同様である。 The same applies when M is Ca.

上記実施例では溶液中に析出した単結晶をすくい上げ
る方法を採用したが単結晶が析出しつつある領域に析出
結晶と同一の組成の種子結晶をロッドの先端に保持して
上部より回転しつつ浸漬すれば、種子結晶の先から一定
の方向性を有する単結晶が生育し、これを引き上げるこ
とにより、より大形の単結晶を得ることも可能である。
In the above example, the method of scooping up the single crystal precipitated in the solution was adopted, but the seed crystal having the same composition as the precipitated crystal was held at the tip of the rod in the region where the single crystal was being precipitated, and the seed crystal was immersed while rotating from above. If so, a single crystal having a certain directionality grows from the tip of the seed crystal, and by pulling this, a larger single crystal can be obtained.

また、上記実施例において、(La1-xMx2CuO4のCuの
一部をNiで置きかえることができる。この置き換えは
(La1-xMx2Cu1-yNiyO4において、0<y<0.05の範囲
で可能である。この範囲内では超伝導性は保たれてい
る。
In addition, in the above-mentioned embodiment, a part of Cu of (La 1-x M x ) 2 CuO 4 can be replaced with Ni. This replacement is possible in (La 1-x M x ) 2 Cu 1-y Ni y O 4 in the range of 0 <y <0.05. Superconductivity is maintained within this range.

溶媒がKFの場合は約950℃まで加熱することにより全
体を溶解することができる。温度の降下により析出する
酸化物は溶媒より比重が大きいために、溶媒の底に析出
する。よって溶媒を保持する容器の温度の降下は底部を
先行させることが有効である。
When the solvent is KF, the whole can be dissolved by heating to about 950 ° C. Since the oxide that precipitates due to the decrease in temperature has a higher specific gravity than the solvent, it precipitates at the bottom of the solvent. Therefore, it is effective to lower the temperature of the container holding the solvent at the bottom.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明によれば所望の組成の単結
晶からなる酸化物超伝導体が得られるので、その超伝導
性を利用して電極用材料等に用いうる。また、イオン注
入等により所望のジョセフソン接合を形成でき、高感度
の光ディテクタ等を作製するのに有用である。
As described above, according to the present invention, an oxide superconductor composed of a single crystal having a desired composition can be obtained, and thus it can be used as an electrode material or the like by utilizing its superconductivity. Moreover, a desired Josephson junction can be formed by ion implantation or the like, which is useful for producing a highly sensitive photodetector or the like.

【図面の簡単な説明】[Brief description of drawings]

第1図は(La1-xMx2CuO4の結晶構造、第2図は実施例
1において得られた単結晶のX線回折パタン、第3図は
実施例1および実施例2において得られた単結晶の固有
抵抗の温度変化。 1……CuO6八面体層の配列、2……(La1-xMx2O
3-x(NaCl型)層の配列、3……実施例1で得られた単
結晶の電気抵抗、4……実施例2で得られた単結晶の電
気抵抗。
FIG. 1 is the crystal structure of (La 1-x M x ) 2 CuO 4 , FIG. 2 is the X-ray diffraction pattern of the single crystal obtained in Example 1, and FIG. 3 is the results in Examples 1 and 2. The temperature change of the specific resistance of the obtained single crystal. 1 …… CuO 6 octahedral layer arrangement, 2 …… (La 1-x M x ) 2 O
Arrangement of 3-x (NaCl type) layers, 3 ... Electric resistance of single crystal obtained in Example 1, 4 ... Electric resistance of single crystal obtained in Example 2.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 榎本 陽一 茨城県那珂郡東海村大字白方字白根162番 地 日本電信電話株式会社茨城電気通信研 究所内 (72)発明者 鈴木 実 茨城県那珂郡東海村大字白方字白根162番 地 日本電信電話株式会社茨城電気通信研 究所内 (72)発明者 小田 研 茨城県那珂郡東海村大字白方字白根162番 地 日本電信電話株式会社茨城電気通信研 究所内 (72)発明者 森脇 和幸 茨城県那珂郡東海村大字白方字白根162番 地 日本電信電話株式会社茨城電気通信研 究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Yoichi Enomoto Yoichi Enomoto Tokai-mura, Ibaraki Prefecture, Tokai-mura, Shirahoji 162 Shirane, Nippon Telegraph and Telephone Corporation Ibaraki Telecommunications Research Institute (72) Inventor Minoru Naka, Ibaraki Prefecture Tokai-mura Large-scale Shirokata 162 Shirane Shiba, Nippon Telegraph and Telephone Corporation Ibaraki Telecommunications Research Laboratories (72) Inventor Oda Ken Tokai-mura Large-scale Shirahane Shirane 162 Nippon Telegraph and Telephone Corporation Ibaraki Telecom (72) Inventor Kazuyuki Moriwaki 162 Shirahane, Shikatakata, Tokai-mura, Naka-gun, Ibaraki Prefecture Nippon Telegraph and Telephone Corporation Ibaraki Telecommunications Research Institute

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】KF又はCuOの溶液に(La1-xMx2CuO4
(M=Ca,Sr,Ba;0<x<1)を溶解させ、該溶液を徐冷
することにより、前記物質の単結晶を析出させることを
特徴とする酸化物超伝導体単結晶育成法。
1. A solution of KF or CuO containing (La 1-x M x ) 2 CuO 4 ,
(M = Ca, Sr, Ba; 0 <x <1) is dissolved, and the solution is gradually cooled to precipitate a single crystal of the substance. .
JP6528887A 1987-03-19 1987-03-19 Oxide superconductor single crystal growth method Expired - Fee Related JPH0818909B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6528887A JPH0818909B2 (en) 1987-03-19 1987-03-19 Oxide superconductor single crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6528887A JPH0818909B2 (en) 1987-03-19 1987-03-19 Oxide superconductor single crystal growth method

Publications (2)

Publication Number Publication Date
JPS63230594A JPS63230594A (en) 1988-09-27
JPH0818909B2 true JPH0818909B2 (en) 1996-02-28

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Country Link
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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2684432B2 (en) * 1988-12-29 1997-12-03 弘直 兒嶋 Superconducting oxide single crystal and method for producing the same

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JPS63230594A (en) 1988-09-27

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