JPH0819527B2 - Plasma equipment - Google Patents
Plasma equipmentInfo
- Publication number
- JPH0819527B2 JPH0819527B2 JP60205193A JP20519385A JPH0819527B2 JP H0819527 B2 JPH0819527 B2 JP H0819527B2 JP 60205193 A JP60205193 A JP 60205193A JP 20519385 A JP20519385 A JP 20519385A JP H0819527 B2 JPH0819527 B2 JP H0819527B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- microwave
- substrate
- vacuum chamber
- plasma device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 36
- 230000005684 electric field Effects 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高周波プラズマ用いたプラズマ装置に関す
るものである。TECHNICAL FIELD The present invention relates to a plasma device using high frequency plasma.
プラズマCVDやプラズマエッチングは薄膜プロセスの
重要な要素技術であり、基板温度が低温で処理できるよ
うプラズマの周波数をマイクロ波領域まで高めたプロセ
スが研究されている。Plasma CVD and plasma etching are important elemental technologies of the thin film process, and a process in which the frequency of plasma is increased to the microwave range so that the substrate temperature can be processed at a low temperature is being studied.
高周波プラズマは使用する電磁波の周波数が高い程良
く、特に磁界強度をECR（電子サイクロン共鳴）の限
界、すなわち2.45GHzでは875ガウス以上にすると共鳴が
おこり、低いガス圧でもプラズマが発生持続することが
知られている。The higher the frequency of the electromagnetic wave used, the better the high-frequency plasma. Especially, when the magnetic field strength reaches the limit of ECR (Electron Cyclone Resonance), that is, at 875 Gauss or more at 2.45 GHz, resonance occurs, and plasma is generated and maintained even at low gas pressure. Are known.
従来のプラズマ装置を第４図に示す。ここではプラズ
マCVDの場合について説明するが、プラズマエッチング
の場合も構成は同じである。A conventional plasma device is shown in FIG. Here, the case of plasma CVD will be described, but the configuration is the same for plasma etching.
第４図において、真空槽１は通常円筒形とし、内部で
２室に別け、プラズマ室２と蒸着室３とし、適当な位置
から所要のガスを導入し、蒸着室側から排気を行ない、
プラズマ発生に適した気圧（10-6ないし10-1Torr程度）
に維持する。プラズマ室２の周囲にはコイル状の電磁石
４を配置し、プラズマ室２内の磁界を真空槽１の円筒の
軸方向と平行にする。プラズマ室２と蒸着室３はプラズ
マ窓５を通じて連っており、蒸着室３の中に基板６をプ
ラズマ窓５に対面させて設置する。プラズマ室２のプラ
ズマ窓５と反対の側にはマイクロ波電力導入部７があ
り、マイクロ波導波管を介してマグネトロン８につなが
っている。ECRを起こすためには磁界とマイクロ波の電
界を直交させる。そのためプラズマ室２は円筒空洞共鳴
器のTE11モードが立つような寸法とする。このモードは
円筒の中心で電界強度が高いので、マイクロ波電力導入
部７からやはり同様のTE11モードのマイクロ波を導入
し、プラズマ室２の中のモードと、上記の円筒の中心部
で中心軸９を結合させている。2.45GHzのマイクロ波を
使用する場合、プラズマ室２の磁界強度はECR限界の875
ガウスより若干高くするとプラズマ放電が安定する。第
４図のような構成にすると、発生するマイクロ波プラズ
マは磁場もマイクロ波の電界も円筒の中心を中心軸とし
て分布するため基板６に蒸着される膜厚も比較的均一で
好都合である。In FIG. 4, the vacuum chamber 1 is usually cylindrical, and it is divided into two chambers inside, a plasma chamber 2 and a vapor deposition chamber 3, into which a desired gas is introduced from an appropriate position and exhaust is performed from the vapor deposition chamber side.
Atmospheric pressure suitable for plasma generation (10 -6 to 10 -1 Torr)
To maintain. A coil-shaped electromagnet 4 is arranged around the plasma chamber 2 to make the magnetic field in the plasma chamber 2 parallel to the axial direction of the cylinder of the vacuum chamber 1. The plasma chamber 2 and the vapor deposition chamber 3 are connected to each other through the plasma window 5, and the substrate 6 is installed in the vapor deposition chamber 3 so as to face the plasma window 5. A microwave power introduction part 7 is provided on the side of the plasma chamber 2 opposite to the plasma window 5, and is connected to a magnetron 8 via a microwave waveguide. In order to cause ECR, the magnetic field and the microwave electric field are made orthogonal. Therefore, the plasma chamber 2 is dimensioned so that the TE 11 mode of the cylindrical cavity resonator stands. In this mode, the electric field strength is high at the center of the cylinder, so the same TE 11 mode microwave is introduced from the microwave power introduction part 7 to center the mode in the plasma chamber 2 and the center part of the cylinder. The shaft 9 is connected. When using a microwave of 2.45 GHz, the magnetic field strength of the plasma chamber 2 is 875 which is the ECR limit.
If it is slightly higher than Gauss, the plasma discharge becomes stable. With the configuration as shown in FIG. 4, the generated microwave plasma has both a magnetic field and an electric field of microwaves distributed with the center of the cylinder as the central axis, so that the film thickness deposited on the substrate 6 is relatively uniform, which is convenient.
（参考文献：菅野卓雄編著「半導体プラズマプロセス技
術」産業図書、昭和55年出版、138ページ。） 〔発明が解決しようとする問題点〕 上記構成において、膜を形成する場合、基板に損傷を
与えることがしばしば発生し、特にパシベーション膜を
蒸着する場合、下地となる集積回路部分に損傷を発生す
る。この原因は当初一般的にプラズマ粒子によると考え
られていたが、詳細な実験の結果、マイクロ波電力導入
部から出たマイクロ波が完全にプラズマの励起としてエ
ネルギーが失われず、電波のまま輻射して基板表面まで
ビーム状に到達し、強力な電波の電磁場が損傷を与えて
いることが判明した。この現象は電子レンジに入れた磁
気の絵柄が損傷を受けることと本質的に同じであると考
えられる。(Reference: “Semiconductor Plasma Process Technology”, edited by Takuo Sugano, Sangyo Tosho, 1980, 138 pages.) [Problems to be solved by the invention] In the above structure, when a film is formed, the substrate is damaged. This often occurs, especially when a passivation film is deposited, and damages the underlying integrated circuit portion. Initially, it was generally thought that this was due to plasma particles, but as a result of detailed experiments, microwaves emitted from the microwave power introduction part did not completely lose energy as plasma excitation, but radiated as radio waves. It reached the surface of the substrate in the form of a beam and was found to be damaged by the electromagnetic field of strong radio waves. This phenomenon is considered to be essentially the same as the damage of the magnetic pattern placed in the microwave oven.
本発明の目的は、従来の欠点を解消し、マイクロ波電
力導入部からマイクロ波が直接輻射される位置を避けて
基板を配置するようにしたプラズマ装置を提供すること
である。An object of the present invention is to solve the conventional drawbacks and to provide a plasma device in which a substrate is arranged so as to avoid a position where microwaves are directly radiated from a microwave power introduction part.
本発明のプラズマ装置は、真空槽内にマイクロ波電力
と磁界を印加してマイクロ波プラズマを誘起させるプラ
ズマ装置において、真空槽内のマイクロ波の基本共振モ
ードとして、基板付近において基本共振モードの電界強
度の最大点付近とならないモードを用い、マイクロ波電
力導入部を基板と対向せず、かつ電界強度の最大点付近
に配置したものである。The plasma device of the present invention is a plasma device for inducing microwave plasma by applying microwave power and magnetic field in a vacuum chamber, wherein the electric field of the fundamental resonance mode near the substrate is the fundamental resonance mode of microwaves in the vacuum chamber. In this mode, the microwave power introduction part is arranged so as not to face the substrate and near the maximum electric field strength by using a mode which does not come near the maximum strength point.
また、磁界の強度が真空槽の中ですくなくとも一部に
おいてECR限界以上の強度を有するように設定したも
の、印加されるマイクロ波電力と磁界によって決るマイ
クロ波プラズマの分布の中心軸上に基板を配置し、真空
槽内を電気適に円筒形とし、マイクロ波の基本共振モー
ドをTEon（ｎは自然数）とし、マイクロ波プラズマの分
布の中心軸からずらした位置にマイクロ波電力導入部を
配置したもの、基板とマイクロ波導入部をマイクロ波プ
ラズマの分布の中心軸の一方の側に配置したもの、真空
槽内を電気的に方形空洞型とし、プラズマの分布の中心
軸に垂直な方向からマイクロ波電力を供給するもの、ま
た方形空洞型の基本共振モードをTEmo（ｍは偶数）とし
たもの、またマイクロ波導入部を複数個設け、エッチン
グ性のガスを導入し、基板表面をマイクロ波プラズマで
エッチングするようにしたもの、さらにCVD用のガスを
導入し、基板表面に膜を形成するようにしたものであ
る。In addition, the strength of the magnetic field is set so that it is at least partly higher than the ECR limit in the vacuum chamber, and the substrate is placed on the central axis of the microwave plasma distribution determined by the applied microwave power and magnetic field. The inside of the vacuum chamber is cylindrical, the fundamental resonance mode of the microwave is TE on (n is a natural number), and the microwave power introduction part is placed at a position displaced from the center axis of the microwave plasma distribution. The one in which the substrate and the microwave introduction part are arranged on one side of the central axis of the microwave plasma distribution, and the inside of the vacuum chamber is an electrically rectangular cavity type, and the direction perpendicular to the central axis of the plasma distribution intended to supply microwave power, also those fundamental resonance mode of the rectangular cavity mold was TE mo (m is an even number), also provided a plurality of microwave introduction section introduces the etching gases, group That the surface to be etched in a microwave plasma, further introducing a gas for CVD, is obtained so as to form a film on the substrate surface.
［作用］ 真空槽内に励振された数GHz程度のマイクロ波は、真
空槽の寸法がほぼ波長と同じであるため、基本共振モー
ドの電界強度の最大点に基板を配置すると、基板はマイ
クロ波からの損傷を受ける。このため、基板をマイクロ
波プラズマの分布の中心軸上に配置し、またマイクロ波
の電界強度の最大点を避けて配置したため、基板は真空
槽内で励起されたマイクロ波からの損傷を受けることは
ない。また、マイクロ波電力導入部から輻射される電波
は指向性が鋭く、200ないし300mm程度（標準的なプラズ
マ室の長さ）伝搬してもビーム幅はほとんど広がらない
ので、そのビームの延長上を避けて基板を配置すること
により、マイクロ波の直射を防止することができる。ま
た、真空槽内におけるマイクロ波の電界最大点にマイク
ロ波電力導入部を配置したので、マイクロ波は電界結合
より、効率よく真空槽内にマイクロ波電力を供給でき
る。[Operation] Since microwaves of several GHz excited in the vacuum chamber have dimensions of the vacuum chamber that are almost the same as the wavelength, if the substrate is placed at the maximum electric field strength of the fundamental resonance mode, the substrate will be microwave. Get damaged from. For this reason, the substrate is placed on the central axis of the microwave plasma distribution, and is placed so as to avoid the maximum point of the electric field strength of the microwave, so that the substrate is damaged by the microwave excited in the vacuum chamber. There is no. In addition, the radio wave radiated from the microwave power introduction part has a sharp directivity, and even if it propagates about 200 to 300 mm (standard plasma chamber length), the beam width hardly expands. By arranging the substrate while avoiding it, it is possible to prevent direct microwave radiation. Further, since the microwave power introduction part is arranged at the maximum electric field of the microwave in the vacuum chamber, the microwave power can be efficiently supplied to the vacuum chamber by electric field coupling.
本発明の一実施例を第１図ないし第３図に基づいて説
明する。同図において、第４図に示した従来例と同じ部
分については同一番号を付し、その説明を省略する。An embodiment of the present invention will be described with reference to FIGS. In the figure, the same parts as those in the conventional example shown in FIG. 4 are designated by the same reference numerals, and the description thereof will be omitted.
第１図は本発明のプラズマ装置の概略断面図である。
同図において、プラズマ室２は内径200mm、プラズマ窓
５までの長さを約270mmとした。マイクロ波電力導入部
７は中心軸９から約50mm外側にずらし、TE10型の方形導
波管によりマイクロ波を導く。方形導波管の断面は40mm
×80mmとし、マグネトロン８に接続する。この方形導波
管はTE10型なので、導波管の断面の中心軸に電界の最大
点がある。この最大点をプラズマ室２のマイクロ波電力
導入部７に接続したので、プラズマ室２の大きさ（内径
200mm、長さ約270mm）によって励起可能なマイクロ波の
共振モードTE01,TE11モードの内、TE01モードが励起で
き、マイクロ波電力を効率よくプラズマ室に供給でき
る。また、基板６は円筒の中心部に配置したので、TE01
モードの場合中心軸付近では電界強度が弱くなるため、
マイクロ波による基板への損傷を小さくすることができ
る。プラズマ室２にアルゴンとシランの混合ガスを導入
し、ガス圧を約５×10-4Torrに保ち、マイクロ波電力を
100ないし500W印加して、シリコン基板６上に膜を堆積
した結果、緻密なアモルファスシリコン膜が毎秒５ない
し20Åで堆積できた。これに対して、プラズマ窓５のマ
イクロ波電力導入部７に対面する部分にも、丁度方形導
波管の形がそのままの膜厚分布となって膜が堆積した
が、こちらの膜は緻密さがなく、膜質が悪かった。これ
によりマイクロ波電力の直射の影響を知ることができ
た。FIG. 1 is a schematic sectional view of a plasma device of the present invention.
In the figure, the plasma chamber 2 has an inner diameter of 200 mm and the length to the plasma window 5 is about 270 mm. The microwave power introduction part 7 is shifted to the outside by about 50 mm from the central axis 9, and the microwave is guided by a TE 10 type rectangular waveguide. The cross section of the rectangular waveguide is 40 mm
It is set to × 80 mm and connected to the magnetron 8. Since this rectangular waveguide is a TE 10 type, there is a maximum electric field on the central axis of the waveguide cross section. Since this maximum point was connected to the microwave power introduction part 7 of the plasma chamber 2, the size of the plasma chamber 2 (inner diameter
Of the microwave resonance modes TE01 and TE11, which can be excited by 200 mm and a length of about 270 mm), TE01 mode can be excited and microwave power can be efficiently supplied to the plasma chamber. Since the substrate 6 is arranged in the center of the cylinder, TE01
In the mode, the electric field strength becomes weak near the central axis,
Damage to the substrate due to microwaves can be reduced. A mixed gas of argon and silane was introduced into the plasma chamber 2, the gas pressure was maintained at about 5 × 10 -4 Torr, and microwave power was applied.
As a result of applying 100 to 500 W and depositing a film on the silicon substrate 6, a dense amorphous silicon film could be deposited at 5 to 20 liters per second. On the other hand, a film was deposited on the part of the plasma window 5 facing the microwave power introduction part 7 with the film thickness distribution just as the shape of the rectangular waveguide, but the film was dense. There was no, and the film quality was poor. From this, we were able to know the effect of direct irradiation of microwave power.
第２図は、第２の実施例で、第１図に示した実施例の
考え方をさらに発展させ、マイクロ波電力導入部７から
の直接の輻射を防止するため、基板６と同じ側にマイク
ロ波電力導入部７を設けたものであり、マイクロ波電力
導入部７から基板６に至るには反射して戻らなければな
らない。そのためプラズマ室２のプラズマを２回以上通
過しマイクロ波電力が十分にプラズマに吸収され、プラ
ズマの励起効率も向上する。また本実施例においても、
プラズマ室２の基本共振モードをTE01型としているが、
マイクロ波電力導入部７を複数にし、マイクロ波の総合
電力を増加させて高速プラズマCVD化をはかった。本実
施例ではマイクロ波電力導入部７を２個所としたが、さ
らに数を増すことにより、総合電力の増加とともに、中
心軸９に対する円周方向のプラズマの分布も改良され、
基板６に堆積する膜の膜厚分布も改善される。FIG. 2 is a second embodiment, which is a further development of the idea of the embodiment shown in FIG. 1 and in order to prevent direct radiation from the microwave power introduction part 7, a microwave is provided on the same side as the substrate 6. The microwave power introducing unit 7 is provided and must be reflected back from the microwave power introducing unit 7 to the substrate 6. Therefore, the plasma in the plasma chamber 2 is passed twice or more, the microwave power is sufficiently absorbed by the plasma, and the excitation efficiency of the plasma is also improved. Also in this embodiment,
The basic resonance mode of the plasma chamber 2 is TE 01 type,
A plurality of microwave electric power introducing parts 7 are provided to increase the total electric power of microwaves to achieve high speed plasma CVD. In the present embodiment, the microwave power introduction part 7 is provided at two places, but by further increasing the number, the distribution of plasma in the circumferential direction with respect to the central axis 9 is improved together with the increase of the total power.
The film thickness distribution of the film deposited on the substrate 6 is also improved.
第３図は本発明を方形空洞型真空槽に応用した第３の
実施例を示す。この方形空洞型とは外観形状ではなく、
プラズマ室２内の電気的形状である。ここでは方形空洞
共振モードとしてTE20モードを選んだ。TEmoモードｍを
偶数にすると、中心軸で電界強度が弱くなるので、基板
６の損傷がすくなくなり有効である。TE20モードを励振
するにあたり中心軸９に垂直な方向から方形導波路を接
続し、電磁界モードを結合させた。この構造とすること
により、マイクロ波電力導入部７からの直接の輻射波が
基板６に達せず損傷を防止できる。FIG. 3 shows a third embodiment in which the present invention is applied to a rectangular cavity type vacuum chamber. This rectangular hollow type is not an external shape,
It is an electrical shape in the plasma chamber 2. Here, TE 20 mode was selected as the rectangular cavity resonance mode. If the TE mo mode m is set to an even number, the electric field strength becomes weaker on the central axis, so that damage to the substrate 6 is reduced and it is effective. In exciting the TE 20 mode, a rectangular waveguide was connected from the direction perpendicular to the central axis 9 to couple the electromagnetic field modes. With this structure, direct radiation waves from the microwave power introducing unit 7 do not reach the substrate 6 and damage can be prevented.
本発明によれば、真空槽内に励振された共振モードの
電界強度の最大点を避けて基板を配置したため、マイク
ロ波による基板への損傷を防ぐことができる。また、マ
イクロ波電力導入部から輻射される電波は指向性が鋭
く、標準的なプラズマ室内の長さを伝搬してもビーム幅
はほとんど広がらないので、基板表面を損傷するから、
そのビームの延長上を避けて基板を配置することによ
り、マイクロ波の直射を防止することができ、基板表面
の損傷を最少限にし、その実用上の効果は大なるものが
ある。さらに、真空槽内におけるマイクロ波の電界最大
点にマイクロ波電力導入部を配置したので、効率よくマ
イクロ波電力を真空槽内に供給でき、その実用上の効果
は大きい。According to the present invention, since the substrate is arranged in the vacuum chamber so as to avoid the maximum point of the electric field intensity of the excited resonance mode, it is possible to prevent the substrate from being damaged by microwaves. In addition, the radio waves radiated from the microwave power introduction section have a sharp directivity, and even if they propagate the length of the standard plasma chamber, the beam width does not spread so much, which damages the substrate surface.
By arranging the substrate while avoiding the extension of the beam, direct irradiation of microwaves can be prevented, damage to the substrate surface is minimized, and its practical effect is great. Further, since the microwave power introduction part is arranged at the maximum electric field of the microwave in the vacuum chamber, the microwave power can be efficiently supplied into the vacuum chamber, and its practical effect is great.
第１図は本発明の一実施例におけるプラズマ装置の断面
図、第２図は同第２の実施例の断面図、第３図は同第３
の実施例の断面図、第４図は従来例のプラズマ装置の断
面図である。 １……真空槽、２……プラズマ室、３……蒸着室、４…
…電磁石、５……プラズマ窓、６……基板、７……マイ
クロ波電力導入部、８……マグネトロン、９……中心
軸。1 is a sectional view of a plasma device according to an embodiment of the present invention, FIG. 2 is a sectional view of the second embodiment, and FIG. 3 is a sectional view of the same.
FIG. 4 is a sectional view of the embodiment of FIG. 4, and FIG. 4 is a sectional view of a conventional plasma device. 1 ... vacuum chamber, 2 ... plasma chamber, 3 ... deposition chamber, 4 ...
… Electromagnet, 5 ... Plasma window, 6 ... Substrate, 7 ... Microwave power introduction part, 8 ... Magnetron, 9 ... Central axis.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 三露 常男 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 昭60−218474（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tsuneo Sanryu 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) References JP-A-60-218474 (JP, A)
Claims (8)
導入し、さらに磁界を印加してマイクロ波プラズマを誘
起させるプラズマ装置において、前記マイクロ波プラズ
マの分布の中心軸上に基板を配置し、前記真空槽内のマ
イクロ波の基本共振モードとして、前記基板付近におい
て前記基本共振モードの電界強度の最大点付近とならな
い共振モードを用い、前記マイクロ波電力導入部の位置
として前記基板と対向せず、かつ前記電界強度の最大点
付近に配置したことを特徴とするプラズマ装置。1. A plasma apparatus in which a microwave power is introduced into a vacuum chamber and a magnetic field is further applied to induce microwave plasma, in which a substrate is arranged on the central axis of the distribution of the microwave plasma, As the fundamental resonance mode of the microwave in the vacuum chamber, a resonance mode that does not become near the maximum point of the electric field strength of the fundamental resonance mode in the vicinity of the substrate is used, and the microwave power introduction unit does not face the substrate. And a plasma device arranged near the maximum point of the electric field strength.
においてECR限界以上の強度を有するように設定したこ
とを特徴とする特許請求の範囲第（１）項記載のプラズ
マ装置。2. The plasma device according to claim 1, wherein the intensity of the magnetic field is set so as to have an intensity equal to or higher than the ECR limit in at least a part of the vacuum chamber.
波の基本共振モードTEon（ｎは自然数）とし、マイクロ
波プラズマの分布の中心軸からずらした位置にマイクロ
波電力導入部を配置したことを特徴とする特許請求の範
囲第（１）項記載のプラズマ装置。3. The inside of the vacuum chamber is electrically cylindrical, the microwave fundamental resonance mode TE on (n is a natural number), and the microwave power introduction part is provided at a position displaced from the central axis of the microwave plasma distribution. The plasma device according to claim (1), wherein the plasma device is arranged.
ズマの分布の中心軸の一方の側に配置したことを特徴と
する特許請求の範囲第（１）項ないし第（３）項の何れ
か１項記載のプラズマ装置。4. The substrate and the microwave introduction part are arranged on one side of the central axis of the distribution of the microwave plasma, according to any one of claims (1) to (3). The plasma device according to item 1.
共振モードをTEm0（ｍは偶数）とし、プラズマの分布の
中心軸に垂直な方向からマイクロ波電力を供給すること
を特徴とする特許請求の範囲第（１）項記載のプラズマ
装置。5. A vacuum chamber having an electrically rectangular cavity type, a fundamental resonance mode of TE m0 (m is an even number), and microwave power is supplied from a direction perpendicular to the central axis of plasma distribution. The plasma device according to claim (1).
徴とする特許請求の範囲第（１）項ないし第（５）項の
何れか１項記載のプラズマ装置。6. The plasma device according to claim 1, wherein a plurality of microwave introduction parts are provided.
マイクロ波プラズマでエッチングするようにしたことを
特徴とする特許請求の範囲第（１）項、第（３）項ない
し第（５）項の何れか１項記載のプラズマ装置。7. An etching gas is introduced so that the surface of the substrate is etched by microwave plasma. Claims (1), (3) to (5) The plasma device according to any one of items.
成するようにしたことを特徴とする特許請求の範囲第
（１）項、第（３）項ないし第（５）項の何れか１項記
載のプラズマ装置。8. A gas for CVD is introduced to form a film on the surface of the substrate, according to claims (1) and (3) to (5). The plasma device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60205193A JPH0819527B2 (en) | 1985-09-19 | 1985-09-19 | Plasma equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60205193A JPH0819527B2 (en) | 1985-09-19 | 1985-09-19 | Plasma equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6267178A JPS6267178A (en) | 1987-03-26 |
| JPH0819527B2 true JPH0819527B2 (en) | 1996-02-28 |
Family
ID=16502943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60205193A Expired - Lifetime JPH0819527B2 (en) | 1985-09-19 | 1985-09-19 | Plasma equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0819527B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60218474A (en) * | 1984-04-13 | 1985-11-01 | Ushio Inc | Film forming method |
-
1985
- 1985-09-19 JP JP60205193A patent/JPH0819527B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6267178A (en) | 1987-03-26 |
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