JPH0820465B2 - Electrical inspection method for semiconductor device - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for inspecting a semiconductor device, and more specifically, an electrical inspection for a semiconductor device having a protruding electrode or having conductive particles arranged on the electrode. The method of taking out the electrode in.

(B) Conventional technology In the conventional electrical inspection of semiconductor devices, electrodes are taken out by sequentially pressing a metal probe against the electrodes of the semiconductor device, and output by applying a predetermined input signal to the electrodes. The measured signal was measured and the semiconductor device was evaluated.

(C) Problems to be Solved by the Invention However, when the electrodes are taken out by such a conventional method, the electrodes of the semiconductor device are damaged by the contact of the probe. This damage is caused by, for example, Japanese Patent Laid-Open No. 62-
When a semiconductor device having a protruding electrode as described in Japanese Patent No. 248229 is mounted on another substrate by press contact, there is a tendency that the connection portion becomes unstable. In addition, JP-A 1-2274
When a semiconductor device with conductive particles arranged on the electrode as described in No. 44 is electrically inspected using the above metal probe, the conductive particles may be damaged or move. However, there is a problem that a defective connection is likely to occur during the subsequent mounting.

The present invention has been made in consideration of such circumstances, and a semiconductor that can be taken out without damaging the electrodes of the semiconductor device by using a substrate provided with inspection electrodes corresponding to the respective electrodes of the semiconductor device. An electrical inspection method for an apparatus is provided.

(D) Means for Solving the Problems The present invention provides an electrical testing method for a semiconductor device having electrodes provided with microscopic protrusions or conductive particles, and an inspection electrode is provided at a position corresponding to each electrode of the semiconductor device. Using the hard substrate, the electrodes of the semiconductor device are first aligned with the inspection electrodes of the hard substrate, and then the semiconductor device and the hard substrate are pressed against each other to increase the height of each electrode of the semiconductor device. Is a method for electrically inspecting a semiconductor device, wherein the variation in the thickness is corrected and the electrode of the semiconductor device and the inspection electrode are electrically connected.

(E) Action When the substrate and the semiconductor device are pressed against each other, the inspection electrodes simultaneously contact all the electrodes of the semiconductor device. Therefore, since a metal probe having a sharp tip is not used, the electrodes of the semiconductor device are not damaged. Furthermore, the conductive particles arranged on the electrodes of the semiconductor device are not damaged, and the conductive particles do not move.

(F) Embodiment Hereinafter, the present invention will be described in detail based on an embodiment shown in the drawings. This does not limit the present invention.

FIG. 1 is a structural explanatory view showing an embodiment of the present invention. In this figure, the semiconductor device 1 having the protruding electrodes 2 formed thereon is aligned in the thickness direction (direction of arrow 5) with the inspection substrate 3 having the extraction electrodes 4 formed at positions facing the protruding electrodes 2. It is held down. At this time, one end of the extraction electrode 4 is in contact with and electrically connected to the protruding electrode 2 of the semiconductor device, and the other end of the extraction electrode 4 is connected to the output terminal of the inspection device (not shown) of the semiconductor device. Thus, the semiconductor device 2 is electrically inspected.

FIG. 2 is a structural explanatory view showing another embodiment of the present invention. This embodiment can be suitably carried out when inspecting a semiconductor device in a wafer state, and a substrate 6 having a trapezoidal cross section is used as an inspection substrate.
FIG. 3 is a plan view of the substrate 6. Referring to FIG. 2, the substrate 6 is electrically inspected for one chip, and then the next chip can be inspected by moving the wafer or the substrate 6 by a distance of one chip. Can be inspected well.

The extraction electrodes 4 and 7 in these examples are
Metals such as W, Ni, Cu, Ag, Ti, Cr, Au and alloys of these metals are formed of one layer or two or more layers. It is also effective to use Au on the surface to reduce the contact resistance.

As a material for the inspection substrates 3 and 6, a hard substrate such as glass, ceramic, glass-epoxy, or metal coated with an insulating material can be used. In this case, the hard substrate can correct variations in the height of the protruding electrodes. Further, substrates having elasticity such as rubber can be used for the substrates 3 and 6. When an elastic substrate is used, each lead-out electrode can follow variations in height of the protruding electrode, so that reliable inspection can be performed with a low load.

Although the case of inspecting the semiconductor device having the protruding electrodes has been described above, it goes without saying that the same can be inspected in the case of the semiconductor device in which the conductive particles are arranged on the electrodes.

(G) Effect of the Invention According to the present invention, it is possible to prevent the electrodes of the semiconductor device from being damaged. Therefore, when the semiconductor device is mounted on another substrate after the electrical inspection, a stable connection state can be obtained. Obtainable. Further, since the electrodes of the semiconductor substrate are pressed in the thickness direction by using the inspection substrate, for example, as disclosed in
With the method disclosed in 62-248229, when the semiconductor device is connected to another substrate, it is possible to correct the initial variation in the height of the electrode and improve the stability in the connection. In this case, since the electrodes of the semiconductor device are pressed simultaneously by the inspection electrodes of the hard substrate, damage to the electrodes of the semiconductor device at the time of height correction is suppressed.

[Brief description of drawings]

FIG. 1 is a structural explanatory view for explaining an embodiment of the present invention, FIG. 2 is a view corresponding to FIG. 1 showing another embodiment of the present invention, and FIG. 3 is a main part of FIG. It is a top view. 1 ... Semiconductor device, 2 ... Projection electrode, 3 ... Inspection substrate,
4 ... Take-out electrode.

Claims (1)

[Claims] 1. A method for electrically inspecting a semiconductor device having electrodes provided with fine protrusions or conductive particles, wherein a hard substrate provided with an inspection electrode at a position corresponding to each electrode of the semiconductor device is first used. The electrodes of the semiconductor device are aligned with respect to the inspection electrodes of the hard substrate, and then the semiconductor device and the hard substrate are pressed against each other to correct the height variation of each electrode of the semiconductor device, and, A method for electrically inspecting a semiconductor device, comprising electrically connecting an electrode of the semiconductor device and an electrode for inspection.